JP2001051145A - Optical waveguide and its manufacture - Google Patents
Optical waveguide and its manufactureInfo
- Publication number
- JP2001051145A JP2001051145A JP22946499A JP22946499A JP2001051145A JP 2001051145 A JP2001051145 A JP 2001051145A JP 22946499 A JP22946499 A JP 22946499A JP 22946499 A JP22946499 A JP 22946499A JP 2001051145 A JP2001051145 A JP 2001051145A
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- Prior art keywords
- quartz
- optical waveguide
- cladding layer
- waveguide device
- phosphorus
- Prior art date
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- Optical Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光通信などに用いられ
る、光導波路デバイスおよびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical waveguide device used for optical communication and the like and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】インターネットの急激な普及にともな
い、光通信システムの商用化展開が非常な勢いで進んで
いる。通常の電話回線で３万回線以上を伝送できる２．
５Ｇｂ／ｓシステムなどが多くの地域で導入されてお
り、情報伝送容量の拡大にあわせて、波長多重方式によ
って多重数倍の大容量化を図る方式が既に実用化される
に至っている。初期の数波レベルの波長多重から、現在
では、８０波レベルまでの高密度波長多重方式が商用化
されるようになってきた。このような波長多重光通信方
式においては、異なる波長を有する複数の信号光を１本
の光ファイバに導入するための合波器、また波長多重さ
れた光信号から、異なる波長の信号に切り分けるための
分波器が重要となり、その一例として、アレイ導波路格
子（ＡＷＧ）が注目されている。図５に示すようにＡＷ
Ｇは入出力２つのスターカップラ２２、２４の間に同じ
光路長差を有するアレイ状の光導波路２３が形成された
ものであり、アレイ導波路が高次の回折格子の役割を担
うことによって合分波の機能を示すものである。シリコ
ン（Ｓｉ）基板ないし、石英基板上に石英系の光導波路
を形成したＡＷＧはすでに商用化されており、実際の光
通信システムに用いられている。2. Description of the Related Art With the rapid spread of the Internet, the commercialization of optical communication systems is proceeding at an extremely rapid pace. 1. More than 30,000 lines can be transmitted over normal telephone lines.
5 Gb / s systems and the like have been introduced in many areas, and a system for increasing the number of multiplexes multiple times by a wavelength multiplexing system has already been put into practical use in accordance with an increase in information transmission capacity. From the initial wavelength multiplexing at several wave levels to the high-density wavelength multiplexing method up to 80 wave levels, commercialization has been started. In such a wavelength division multiplexing optical communication system, a multiplexer for introducing a plurality of signal lights having different wavelengths into one optical fiber, and for separating a wavelength multiplexed optical signal into signals of different wavelengths. Becomes important, and an array waveguide grating (AWG) is attracting attention as an example. As shown in FIG.
G is an array of optical waveguides 23 having the same optical path length difference between the two input and output star couplers 22 and 24. The array waveguide plays the role of a higher-order diffraction grating. This shows the function of demultiplexing. AWGs in which a silica-based optical waveguide is formed on a silicon (Si) substrate or a quartz substrate have already been commercialized and used in actual optical communication systems.
【０００３】ところが基板にＳｉを用いた石英系光導波
路デバイスではＳｉと石英系導波路材料の熱膨張係数の
違いに起因する熱応力が発生する。この応力により石英
系膜内部に複屈折が発生し、その結果伝搬光の偏光に依
存して伝搬特性が異なってしまうという問題が潜在す
る。特にＡＷＧデバイスのように隣接チャネル波長間隔
が狭く急峻な透過波長スペクトルを有するデバイスでは
ごく僅かなＴＥ、ＴＭモード間の波長特性のずれでも透
過波長領域内で大きな偏光依存損失（ＰＤＬ）が生じて
しまい実用上大きな問題となる。本発明者らの知見によ
ればＰＤＬは、例えば周波数１００ＧＨｚ間隔のＡＷＧ
デバイスの透過波長特性において、ＴＭモードの透過中
心波長λTMとＴＥモードの透過中心波長λTEの差Δλ
（＝λTM−λ TE）に近似的に比例した値となる。その比
例定数は特に透過波長スペクトルのピーク部を平坦化す
るなどの設計手法をとらなければ数〜１０ｄＢ／ｎｍ程
度と見積もられる。現在実用的に生産されている石英系
光導波路で上記のようなＡＷＧデバイスを作製した場合
通常Δλは０．１ｎｍ以上であるためＰＤＬは１ｄＢ以
上と非常に大きくなってしまう。そこで現在実用に供さ
れるＳｉ基板を用いた石英系導波路ＡＷＧデバイスとし
ては図６に示すように偏光間の波長特性のずれを相殺す
るためにアレイ導波路の中央部に半波長板を挿入した構
造が用いられており、ＰＤＬは０．２ｄＢ以下という実
用上問題ないレベルにまで抑えられている。しかしなが
ら半波長板を挿入するこの構造は半波長板を精密な位置
精度をもって設置するのに少なからぬ工数を要する上、
現時点では半波長板自体の単価が低廉化されていない等
の理由によりデバイスの低コスト化の妨げになってい
る。半波長板を使用せずにＰＤＬを低減するためには導
波路を構成する石英系膜の熱応力を低減する必要があ
る。熱応力を低減することは膜中の燐（Ｐ）やボロン
（Ｂ）等のドーパント濃度を調整し熱膨張係数をＳｉ基
板に近づけることにより可能である。この方法により熱
応力を低減したクラッドを用いて光導波路を形成する方
法が例えば特開平８−１３６７５４号公報に記載されて
いる。この公報によれば、各種のドーパントの添加濃度
と石英系ガラスの熱膨張係数とは図７に示すような関係
があり、ドーパントの濃度を適切に制御することによ
り、基板とガラス層との熱膨張係数の差を低減すること
ができる。However, a quartz-based optical waveguide using Si as a substrate
In the waveguide device, the coefficient of thermal expansion of Si and quartz-based
A thermal stress occurs due to the difference. This stress causes quartz
Birefringence occurs inside the system film, and as a result,
And the propagation characteristics may differ.
You. Adjacent channel wavelength spacing, especially for AWG devices
Devices with narrow and steep transmission wavelength spectra
Even slight deviations in wavelength characteristics between TE and TM modes are transparent.
Large polarization dependent loss (PDL) occurs in the over-wavelength region
This is a serious problem in practical use. According to the findings of the present inventors,
PDL is, for example, an AWG with a frequency of 100 GHz.
During transmission of TM mode in transmission wavelength characteristics of device
Heart wavelength λTMAnd transmission mode wavelength λ of TE modeTEDifference Δλ
(= ΛTM−λ TE) Is approximately proportional to Its ratio
Example constants especially flatten the peaks of the transmission wavelength spectrum.
About 10 to 10 dB / nm unless a design method such as
Estimated. Quartz system currently practically produced
When an AWG device as described above is manufactured using an optical waveguide
Since Δλ is usually 0.1 nm or more, PDL is 1 dB or less.
It will be very large with the top. So now it is put into practical use
Waveguide AWG device using Si substrate
As shown in FIG. 6, the deviation of the wavelength characteristic between the polarized lights is offset.
A half-wave plate at the center of the arrayed waveguide
Structure is used, and the PDL is 0.2 dB or less.
It has been reduced to a level that is acceptable for practical use. However
This structure inserts a half-wave plate from the
It takes considerable man-hours to install with accuracy,
At present, the unit price of the half-wave plate itself has not been reduced.
Are preventing the cost reduction of devices.
You. To reduce PDL without using a half-wave plate,
It is necessary to reduce the thermal stress of the quartz film forming the waveguide.
You. Reducing thermal stress is due to phosphorus (P) and boron in the film.
(B) by adjusting the dopant concentration and the thermal expansion coefficient
This is possible by approaching the board. This way the heat
Forming an optical waveguide using a stress-reduced cladding
The method is described in, for example, JP-A-8-136754.
I have. According to this publication, the additive concentration of various dopants
And the coefficient of thermal expansion of quartz glass as shown in FIG.
By properly controlling the dopant concentration.
To reduce the difference in coefficient of thermal expansion between the substrate and the glass layer.
Can be.
【０００４】また、エレクトロニクス・レターズ、第３
３巻、第１３号、1173〜1174ページ、１９９７年６月
（ELECTRONICS LETTERS,Vol.33,No.13,PP.1173-1174, J
une,1997）によると鈴木らはこの方法により応力複屈折
を低減したＡＷＧデバイスを作製し、Δλをそれまでの
０．１９ｎｍから０．０３ｎｍに低減することに成功し
ている。[0004] Also, Electronics Letters, No. 3
Vol. 3, No. 13, pp. 1173-1174, June 1997 (ELECTRONICS LETTERS, Vol. 33, No. 13, PP. 1173-1174, J
(une, 1997), Suzuki et al. fabricated an AWG device with reduced stress birefringence by this method and succeeded in reducing Δλ from 0.19 nm to 0.03 nm.
【０００５】[0005]
【発明が解決しようとする課題】従来の方法では石英系
膜の形成に１２００℃以上の高温処理を必要とする火炎
堆積法（ＦＨＤ法）を用いている。低応力化のためにＰ
およびＢの添加濃度を通常より高めているため、このよ
うな高温処理を行うと膜中にＰ2Ｏ5、Ｂ2Ｏ3の分相が発
生しやすいという問題があった。さらに膜表面や膜中に
析出物が多く発生するという問題があった。これらの分
相や析出物は散乱体となり光伝搬損失の増加の原因とな
る。In the conventional method, a flame deposition method (FHD method) requiring a high temperature treatment of 1200 ° C. or more is used for forming a quartz-based film. P for low stress
Since the concentration of B and B is higher than usual, there is a problem that when such a high temperature treatment is performed, phase separation of P 2 O 5 and B 2 O 3 is easily generated in the film. Further, there is a problem that a large amount of precipitates are generated on the film surface and in the film. These phase separations and precipitates become scatterers and cause an increase in light propagation loss.
【０００６】本発明は従来よりも低温でのプロセスを用
いて、膜中応力を低減すべく膜中のドーパント濃度を最
適化し、偏光依存性および光伝搬損失が小さい光導波路
デバイスとその製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention provides an optical waveguide device having a low polarization dependence and a small optical propagation loss and a method of manufacturing the same by optimizing the dopant concentration in the film to reduce the stress in the film by using a process at a lower temperature than before. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段】上記の課題を解決するた
めに、本願発明では、以下のような光導波路デバイスと
その製造方法を開示する。In order to solve the above problems, the present invention discloses the following optical waveguide device and its manufacturing method.
【０００８】本発明は、シリコン基板上に下部クラッド
層及びコア及び上部クラッド層を形成する工程を有し、
前記下部クラッド層及び前記上部クラッド層の両方ある
いは上部クラッド層のみを燐及びボロンの少なくともい
ずれかを添加した石英系膜によって形成する光導波路デ
バイスの製造方法において、前記石英系膜はＣＶＤ法を
用い燐元素とボロン元素の重量濃度の和を６．２ｗｔ％
以上１５ｗｔ％以下添加して成膜し、その後前記石英系
膜に８００℃以上１０００℃以下の熱処理を施す工程を
備え、かつ前記石英系膜の膜応力が３×１０7Ｐａ以下
であることを特徴とする光導波路デバイスの製造方法で
ある。The present invention comprises a step of forming a lower cladding layer, a core, and an upper cladding layer on a silicon substrate,
In a method for manufacturing an optical waveguide device in which both the lower clad layer and the upper clad layer or only the upper clad layer is formed of a quartz-based film to which at least one of phosphorus and boron is added, the quartz-based film is formed by a CVD method. The sum of the weight concentrations of phosphorus element and boron element is 6.2 wt%
A step of subjecting the quartz-based film to a heat treatment at 800 ° C. to 1000 ° C., and wherein the quartz-based film has a film stress of 3 × 10 7 Pa or less. This is a method for manufacturing an optical waveguide device.
【０００９】また、上記光導波路デバイスの製造方法に
おいて、前記石英系膜の成膜にはＣＶＤ法を用い燐元素
とボロン元素の重量濃度の和を８．８ｗｔ％以上１５ｗ
ｔ％以下添加して成膜し、その後前記石英系膜に８００
℃以上１０００℃以下の熱処理を施す工程を備え、かつ
前記光導波路デバイスの偏光に依存する透過中心波長の
ずれを０．０３ｎｍ以下とすることを特徴とする光導波
路デバイスの製造方法である。In the above-mentioned method of manufacturing an optical waveguide device, the quartz-based film is formed by using a CVD method so that the total weight concentration of phosphorus and boron is 8.8 wt% or more and 15 watts.
t% or less, and then form a film,
A method for manufacturing an optical waveguide device, comprising a step of performing a heat treatment at a temperature of not less than 1000C and not more than 1000C, and wherein a shift of a transmission center wavelength depending on polarization of the optical waveguide device is set to 0.03 nm or less.
【００１０】前記光導波路デバイスは導波路型光干渉計
とすることができる。[0010] The optical waveguide device may be a waveguide type optical interferometer.
【００１１】さらに好ましくは、燐元素重量濃度を４〜
１２ｗｔ％、ボロン元素重量濃度を３〜１１ｗｔ％とす
ることを特徴とする光導波路デバイスの製造方法であ
る。[0011] More preferably, the weight concentration of elemental phosphorus is from 4 to
A method of manufacturing an optical waveguide device, wherein the concentration of boron is 12 wt% and the weight concentration of boron element is 3 to 11 wt%.
【００１２】また、成膜温度４００℃、熱処理温度８８
０℃、燐元素とボロン元素の重量濃度の和を１２〜１４
ｗｔ％とすることが望ましい。A film forming temperature of 400 ° C. and a heat treatment temperature of 88
0 ° C., the sum of the weight concentrations of the phosphorus element and the boron element is 12 to 14
It is desirable to set it to wt%.
【００１３】前記上部クラッド層及び下部クラッド層の
成膜にはテトラエチルオルソシリケートをオゾンにより
分解する常圧ＣＶＤ法を用いることができる。For forming the upper clad layer and the lower clad layer, a normal pressure CVD method in which tetraethyl orthosilicate is decomposed with ozone can be used.
【００１４】前記下部クラッド層を燐を添加した石英系
膜または燐およびゲルマニウムを添加した石英系膜とす
ることで下部クラッド層の軟化点を上部クラッド層より
も上げることができる。The softening point of the lower cladding layer can be made higher than that of the upper cladding layer by making the lower cladding layer a quartz-based film to which phosphorus is added or a quartz-based film to which phosphorus and germanium are added.
【００１５】本発明は、シリコン基板上に下部クラッド
層、コア、上部クラッド層を有し、前記上部クラッド層
及び前記下部クラッド層の両方あるいは前記上部クラッ
ド層のみを燐及びボロンの少なくともいずれかを添加し
た石英系膜とした光導波路デバイスにおいて、前記石英
系膜中の燐元素とボロン元素の重量濃度の和が８．８ｗ
ｔ％以上１５ｗｔ％以下であり、前記光導波路デバイス
の偏光に依存する透過中心波長のずれが０．０３ｎｍ以
下であることを特徴とする光導波路デバイスである。According to the present invention, a lower clad layer, a core, and an upper clad layer are provided on a silicon substrate, and both the upper clad layer and the lower clad layer or only the upper clad layer is made of at least one of phosphorus and boron. In the optical waveguide device having the added quartz-based film, the sum of the weight concentrations of the phosphorus element and the boron element in the quartz-based film is 8.8w.
An optical waveguide device, wherein the deviation of the transmission center wavelength depending on the polarization of the optical waveguide device is 0.03 nm or less.
【００１６】また、シリコン基板上に下部クラッド層、
コア、上部クラッド層を有する光導波路デバイスにおい
て、前記クラッド層のうち少なくとも上部クラッド層は
燐及びボロンを添加した石英系膜であり、前記下部クラ
ッド層は前記上部クラッド層よりも軟化温度の高い材料
からなり、前記石英系膜中の燐元素とボロン元素の重量
濃度の和が８．８ｗｔ％以上１５ｗｔ％以下であり、前
記光導波路デバイスの偏光に依存する透過中心波長のず
れが０．０３ｎｍ以下であることを特徴とする光導波路
デバイスである。A lower cladding layer on a silicon substrate;
In an optical waveguide device having a core and an upper clad layer, at least the upper clad layer of the clad layer is a quartz-based film to which phosphorus and boron are added, and the lower clad layer is a material having a higher softening temperature than the upper clad layer. Wherein the sum of the weight concentrations of the phosphorus element and the boron element in the quartz-based film is 8.8 wt% or more and 15 wt% or less, and the deviation of the transmission center wavelength depending on the polarization of the optical waveguide device is 0.03 nm or less. An optical waveguide device characterized by the following.
【００１７】前記石英系膜中の燐元素とボロン元素の重
量濃度の和が１２〜１４ｗｔ％であり、該石英系膜の膜
応力が８．３×１０6Ｐａ以下であることが望ましい。It is preferable that the sum of the weight concentrations of the phosphorus element and the boron element in the quartz-based film is 12 to 14 wt%, and the film stress of the quartz-based film is 8.3 × 10 6 Pa or less.
【００１８】前記光導波路デバイスは導波路型光干渉計
とすることができる。The optical waveguide device may be a waveguide type optical interferometer.
【００１９】前記下部クラッド層を燐を添加した石英系
膜または燐およびゲルマニウムを添加した石英系膜とす
ることで上部クラッド層よりも軟化点を上げることがで
きる。The softening point of the lower cladding layer can be higher than that of the upper cladding layer by using a quartz-based film to which phosphorus is added or a quartz-based film to which phosphorus and germanium are added.
【００２０】本発明の光導波路デバイスは、少なくとも
一本以上の入力導波路を接続した第１のスラブ導波路
と、少なくとも一本以上の出力導波路を接続した第２の
スラブ導波路をアレイ導波路の両端に有するアレー導波
路格子型光合分波器を含むことができる。An optical waveguide device according to the present invention comprises an arrayed first slab waveguide connected to at least one or more input waveguides and a second slab waveguide connected to at least one or more output waveguides. An array waveguide grating type optical multiplexer / demultiplexer provided at both ends of the waveguide can be included.
【００２１】本発明では低温でのプロセスを用いること
により高濃度にドーパントを添加したときのＰ2Ｏ5やＢ
2Ｏ3の分相や析出物の発生が減少し、従来より伝搬損失
を低減することが可能となった。またその上でクラッド
層のＰ元素とＢ元素の重量濃度の和が９ｗｔ％以上１５
ｗｔ％以下のＢＰＳＧとすることにより、熱膨張係数が
Ｓｉ基板と近くなり石英系光導波路中に生じる応力を低
減することにより、偏光依存性が極めて小さくかつ伝搬
損失の小さい光導波路デバイス、特にアレー導波路格子
デバイス等の光干渉計を含む光導波路デバイスを形成す
ることが可能になった。In the present invention, when a dopant is added at a high concentration by using a process at a low temperature, P 2 O 5 or B
The phase separation of 2 O 3 and the generation of precipitates were reduced, and it became possible to reduce the propagation loss as compared with the conventional case. Further, the sum of the weight concentrations of the P element and the B element in the cladding layer is 9 wt% or more and 15% or more.
By setting the BPSG to not more than wt%, the thermal expansion coefficient becomes close to that of the Si substrate, and the stress generated in the quartz-based optical waveguide is reduced. It has become possible to form optical waveguide devices including optical interferometers such as waveguide grating devices.
【００２２】[0022]
【発明の実施の形態】以下本発明の実施の形態を図面等
を用いてより詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００２３】シリコン基板上に、テトラエチルオルソシ
リケート（Ｓｉ（ＯＣ2Ｈ5）4）よりなる有機ソースを
オゾン（Ｏ3）により分解する常圧気相堆積法（ＴＥＯ
Ｓ−Ｏ3によるＡＰＣＶＤ法）を用いて、燐（Ｐ）とボ
ロン（Ｂ）を添加した石英系膜（ＢＰＳＧ：ＳｉＯ2+Ｐ
2Ｏ5+Ｂ2Ｏ3）単層１５μｍを堆積した。膜堆積後はア
ニール処理を行った。表１に本実験で用いた成膜温度と
アニール温度、アニール時間を示す。Atmospheric pressure vapor deposition (TEO) in which an organic source made of tetraethylorthosilicate (Si (OC 2 H 5 ) 4 ) is decomposed by ozone (O 3 ) on a silicon substrate.
A quartz-based film (BPSG: SiO 2 + P) doped with phosphorus (P) and boron (B) by using an APCVD method using S—O 3.
2 O 5 + B 2 O 3 ) A single layer of 15 μm was deposited. After the film deposition, an annealing treatment was performed. Table 1 shows the film forming temperature, annealing temperature, and annealing time used in this experiment.
【００２４】[0024]
【表１】 [Table 1]
【００２５】表１の条件Ａ〜Ｅを用いて燐（Ｐ）とボロ
ン（Ｂ）の添加量を変化させたときのＰ元素とＢ元素の
重量濃度の和（以下Ｐ濃度＋Ｂ濃度とする）と膜の応力
の関係を図１に示す。図１において、膜応力は正が引っ
張り、負が圧縮を示し、条件Ａ〜Ｅは表１中の条件Ａ〜
Ｅを表している。膜応力の測定は、基板のそり量を測定
することによって行った。The sum of the weight concentrations of the P element and the B element when the amounts of phosphorus (P) and boron (B) are changed using the conditions A to E in Table 1 (hereinafter referred to as P concentration + B concentration). FIG. 1 shows the relationship between and the stress of the film. In FIG. 1, film stress is positive when tensile and negative when compressive. Conditions A to E are conditions A to E in Table 1.
E is represented. The film stress was measured by measuring the amount of warpage of the substrate.
【００２６】図１に示すように、Ｐ濃度＋Ｂ濃度と膜応
力の関係は線形であり、濃度を制御することにより応力
を適切に制御できることが分かった。また、応力は成膜
条件やアニール条件等プロセスパラメータにも依存して
おり、プロセスパラメータに応じて適切な添加物濃度を
選ぶ必要があることが分かった。As shown in FIG. 1, the relationship between the P concentration + B concentration and the film stress was linear, and it was found that the stress could be appropriately controlled by controlling the concentration. In addition, it was found that the stress also depends on process parameters such as film forming conditions and annealing conditions, and it is necessary to select an appropriate additive concentration according to the process parameters.
【００２７】ＡＷＧデバイスでは透過波長帯域において
ＰＤＬは実用上０．３ｄＢ以下に抑える必要がある。Ｐ
ＤＬはΔλに近似的に比例しその比例定数が数〜１０ｄ
Ｂ／ｎｍであることを考慮するとΔλの絶対値は０．０
３ｎｍ以下に抑える必要がある。Δλ＝ΔＬ／ｍ×Ｂで
あるからΔＬ／ｍ×Ｂ≦０．０３ｎｍとなればよい。こ
こでΔＬは光路長差、ｍは回折次数、Ｂは複屈折すなわ
ちＴＭとＴＥの等価屈折率の差である。ΔＬとｍにおよ
そ一般的な値を用いると、例えばΔＬ＝６０．７３μ
ｍ、ｍ＝５７とするとＢ＝Ｋσよりσ≦８．３×１０6
Ｐａとする必要がある。ここでσは膜応力でありＫは光
弾性定数でありＫ＝３．４×１０-12Ｐａ- 1を用いた。
ただしΔλを最適化するためには単層の膜応力だけでは
決定できずΔλは各層の熱履歴やデバイスの層構造等に
よっても変化することがあることに留意する必要があ
る。In an AWG device, PDL must be suppressed to 0.3 dB or less in a transmission wavelength band in practical use. P
DL is approximately proportional to [Delta] [lambda] and its proportionality constant is several to 10d.
Considering that B / nm, the absolute value of Δλ is 0.0
It needs to be suppressed to 3 nm or less. Since Δλ = ΔL / m × B, it is sufficient that ΔL / m × B ≦ 0.03 nm. Here, ΔL is the optical path length difference, m is the diffraction order, and B is the birefringence, that is, the difference between the equivalent refractive indices of TM and TE. If approximately general values are used for ΔL and m, for example, ΔL = 60.73 μm
When m and m = 57, σ ≦ 8.3 × 10 6 from B = Kσ.
It is necessary to be Pa. Where σ is the film stress K is the photoelastic constant and is K = 3.4 × 10 -12 Pa - 1 was used.
However, it should be noted that in order to optimize Δλ, it cannot be determined only by the film stress of a single layer, and Δλ may change depending on the thermal history of each layer, the layer structure of the device, and the like.
【００２８】表１の条件Ａ〜Ｅを用いて燐（Ｐ）とボロ
ン（Ｂ）の添加量を変化させたときのＰ濃度＋Ｂ濃度と
Δλの関係を図２に示す。図２に示すようにＰ濃度＋Ｂ
濃度とΔλとは線形であり、濃度を適切に制御すること
により偏光に依存しないすなわちΔλがほぼ０ｎｍの光
導波路を作成できることが分かった。表１の範囲すなわ
ち成膜温度が３８０〜４５０℃、アニール温度が８００
〜１０００℃の範囲ではΔλが０．０３ｎｍ以下となる
Ｐ濃度＋Ｂ濃度は８．８ｗｔ％〜１５ｗｔ％の範囲に入
っていることが分かった。FIG. 2 shows the relationship between the P concentration + B concentration and Δλ when the amounts of phosphorus (P) and boron (B) added are changed using the conditions A to E in Table 1. As shown in FIG. 2, P concentration + B
It has been found that the concentration and Δλ are linear, and that by appropriately controlling the concentration, an optical waveguide that does not depend on polarization, that is, has a Δλ of almost 0 nm can be produced. The range of Table 1, namely, the film formation temperature is 380-450 ° C., and the annealing temperature is 800
It was found that the P concentration + B concentration at which Δλ was 0.03 nm or less was within the range of 8.8 wt% to 15 wt% in the range of −1000 ° C.
【００２９】なお、光干渉計を持たないデバイスにおい
ては応力は３×１０7Ｐａ以下であれば十分であり、そ
の時のＰ濃度＋Ｂ濃度は６．２ｗｔ％〜１７．６ｗｔ％
であった。In a device having no optical interferometer, it is sufficient if the stress is 3 × 10 7 Pa or less, and the P concentration + B concentration at that time is 6.2 wt% to 17.6 wt%.
Met.
【００３０】また、Ｐ濃度＋Ｂ濃度と応力あるいはΔλ
との関係は、ＰとＢの割合には依存せず、両元素の和に
依存した。Further, P concentration + B concentration and stress or Δλ
Does not depend on the ratio of P and B, but on the sum of the two elements.
【００３１】ここでアニールの最高温度を１０００℃に
設定したのは、Ｓｉ基板の熱膨張係数に近づくような高
濃度のＰとＢを添加したＢＰＳＧ膜を、ＦＨＤ法等で一
般に用いられている１２００℃以上の高温で処理すると
分相や偏析などの原因により伝搬損失が増加するためで
ある。図３は高濃度添加のＢＰＳＧ（Ｐ４．０ｗｔ％、
Ｂ６．０ｗｔ％）をクラッドに用いた時の伝搬損失のア
ニール温度依存性を示す。成膜にはＴＥＯＳ−Ｏ3によ
るＡＰＣＶＤ法を用いた。この実験結果から伝搬損失が
実用上問題のないレベルである０．３ｄＢ／ｃｍ以下と
なる１０００℃をアニール温度の上限とした。顕微鏡に
よる観察の結果、この時膜中あるいは膜表面に析出等は
現れなかった。またアニール温度が８００℃より低くな
ると上部クラッド層が十分軟化されないため狭いコア間
の埋込が困難となるため８００℃を下限とした。The reason why the maximum annealing temperature is set to 1000 ° C. is that a BPSG film to which a high concentration of P and B is added so as to approach the thermal expansion coefficient of a Si substrate is generally used in the FHD method or the like. This is because, when the treatment is performed at a high temperature of 1200 ° C. or more, propagation loss increases due to factors such as phase separation and segregation. FIG. 3 shows BPSG (P4.0 wt%,
4 shows the annealing temperature dependence of propagation loss when B6.0 wt%) is used for the cladding. The deposition was used APCVD method based on TEOS-O 3. From this experimental result, the upper limit of the annealing temperature was set to 1000 ° C., at which the propagation loss becomes 0.3 dB / cm or less, which is a level at which there is no practical problem. As a result of observation with a microscope, no deposition or the like appeared in the film or on the film surface at this time. When the annealing temperature is lower than 800 ° C., the upper cladding layer is not sufficiently softened, so that it becomes difficult to embed between narrow cores.
【００３２】（実施形態１）図４は本発明の実施形態を
示す製造工程図である。シリコン基板１上に下部クラッ
ド層２、コア層７をＴＥＯＳ−Ｏ3を用いたＡＰＣＶＤ
法を用い、成膜温度４００℃でそれぞれクラッド層にＢ
ＰＳＧを１５μｍ、コア層に燐（Ｐ）とゲルマニウム
（Ｇｅ）を添加した石英系膜ＧＰＳＧ（ＳｉＯ2+Ｐ2Ｏ5
+ＧｅＯ2）を５．５μｍ成膜した（図４（ａ））。その
後、コア層７を反応性イオンエッチング（ＲＩＥ）によ
って所望のパターンにエッチングしチャネル型のコア３
を形成した（図４（ｂ））。この上に上部クラッド層４
にＴＥＯＳ−Ｏ3を用いたＡＰＣＶＤ法で成膜温度４０
０℃でＢＰＳＧを１５μｍ成膜し埋込型石英系光導波路
を形成する（図４（ｃ））。その後、アニール温度８８
０℃で３時間アニール処理した。ここで、コア材料のＧ
ＰＳＧのＧｅの濃度を調整することなどによってクラッ
ド層とコア層との比屈折率差を０．７％とした。なお、
コア材料にはこの他にＰ、ＧｅあるいはＢのうち１つな
いし複数のドーパントを含む石英系材料あるいはＳｉＯ
Ｎ膜、ＳｉＮ膜などいかようにも選ぶことはできる。な
お、光波制御の都合上、下部クラッド層２と上部クラッ
ド層４の屈折率は同じであることが望ましい。(Embodiment 1) FIG. 4 is a manufacturing process diagram showing an embodiment of the present invention. Lower clad layer 2 on the silicon substrate 1, APCVD the core layer 7 using TEOS-O 3
B is applied to the cladding layer at 400 ° C.
A silica-based film GPSG (SiO 2 + P 2 O 5 ) in which PSG is 15 μm and phosphorus (P) and germanium (Ge) are added to the core layer.
+ GeO 2 ) was deposited at 5.5 μm (FIG. 4A). Thereafter, the core layer 7 is etched into a desired pattern by reactive ion etching (RIE) to form a channel type core 3.
Was formed (FIG. 4B). On top of this, the upper cladding layer 4
Film formation temperature 40 by the APCVD method using TEOS-O 3
A BPSG film of 15 μm is formed at 0 ° C. to form a buried quartz optical waveguide (FIG. 4C). Then, annealing temperature 88
Annealing was performed at 0 ° C. for 3 hours. Here, G of the core material
The relative refractive index difference between the cladding layer and the core layer was set to 0.7% by adjusting the concentration of Ge in PSG. In addition,
The core material may be a quartz-based material containing one or more dopants of P, Ge or B, or SiO 2.
N film, SiN film, etc. can be selected in any way. It is desirable that the lower cladding layer 2 and the upper cladding layer 4 have the same refractive index for the sake of light wave control.
【００３３】このように作成したＡＷＧデバイスのＰと
Ｂの濃度および応力、透過中心波長の偏光依存性Δλを
測定したところ、上部クラッド層、下部クラッド層とも
Ｐ濃度＋Ｂ濃度は１２．６ｗｔ％（Ｐ：５．１ｗｔ％、
Ｂ：７．５ｗｔ％）で、応力は２．５×１０6Ｐａ、Δ
λは０．０１ｎｍ、挿入損失は２．３ｄＢと何れも満足
のいく結果を得た。同様な実験をＰ濃度＋Ｂ濃度を１２
〜１４ｗｔ％の範囲で行い、いずれもΔλは０．０３ｎ
ｍ以下であった。When the concentration and stress of P and B of the AWG device thus prepared and the polarization dependence Δλ of the transmission center wavelength were measured, the P concentration + B concentration of the upper cladding layer and the lower cladding layer was 12.6 wt% ( P: 5.1 wt%,
B: 7.5 wt%) and the stress was 2.5 × 10 6 Pa, Δ
λ was 0.01 nm and the insertion loss was 2.3 dB, all of which were satisfactory. A similar experiment was performed with P concentration + B concentration of 12
１４14 wt%, ΔΔ is 0.03 n
m or less.
【００３４】（実施形態２）実施形態１と同様にして、
ただし、下部クラッド層２のＰ濃度＋Ｂ濃度を１０．０
ｗｔ％、（Ｐ：４．１ｗｔ％、Ｂ：５．９ｗｔ％）上部
クラッド層４のＰ濃度＋Ｂ濃度を１３．５ｗｔ％（Ｐ：
５．５ｗｔ％、Ｂ：８．０ｗｔ％）としてＡＷＧデバイ
スを作製した。応力は３．０×１０6Ｐａ、偏光依存性
は０．０１５ｎｍ、挿入損失は１．９ｄＢと満足のいく
結果を得た。この実施形態では下部クラッド層２の濃度
和を上部クラッド層４よりも小さくすることで下部クラ
ッド層２の軟化温度を上げコア３が下部クラッド層２に
沈み込んだり傾いたりするのを抑制する効果を有してい
る。しかし導波路層全体の応力は増加するため、その分
上層クラッド層のＰ濃度＋Ｂ濃度を実施形態１の時より
も大きくする必要がある。(Embodiment 2) As in Embodiment 1,
However, the P concentration + B concentration of the lower cladding layer 2 is 10.0
wt%, (P: 4.1 wt%, B: 5.9 wt%) The P concentration + B concentration of the upper cladding layer 4 is 13.5 wt% (P:
An AWG device was manufactured as follows (5.5 wt%, B: 8.0 wt%). The stress was 3.0 × 10 6 Pa, the polarization dependence was 0.015 nm, and the insertion loss was 1.9 dB. In this embodiment, the softening temperature of the lower cladding layer 2 is increased by making the sum of the concentrations of the lower cladding layer 2 smaller than that of the upper cladding layer 4, so that the core 3 is prevented from sinking or tilting into the lower cladding layer 2. have. However, since the stress of the entire waveguide layer increases, the P concentration + B concentration of the upper cladding layer needs to be higher than that in the first embodiment.
【００３５】（実施形態３）実施形態１と同様にして、
ただし、下部クラッド層２のＰＳＧとし（Ｐ濃度９．２
ｗｔ％）、上部クラッド層４のＰ濃度＋Ｂ濃度を１４．
０ｗｔ％（Ｐ：５．６ｗｔ％、Ｂ：８．４ｗｔ％）とし
てＡＷＧデバイスを作製した。応力は３．６×１０6Ｐ
ａ、偏光依存性は０．０２ｎｍ、挿入損失は２．５ｄＢ
と満足のいく結果を得た。下部クラッド層をＰＳＧとす
ることにより実施形態２における下部クラッド層よりも
軟化温度はさらに上昇し、コア３の沈み込みや傾きはま
ったく見られなくなった。なお下部クラッド層２はＰＳ
Ｇの変わりにＧＰＳＧであっても構わない。(Embodiment 3) As in Embodiment 1,
However, the PSG of the lower cladding layer 2 (P concentration 9.2
(wt%), the P concentration + B concentration of the upper cladding layer 4 is 14.
An AWG device was prepared at 0 wt% (P: 5.6 wt%, B: 8.4 wt%). Stress is 3.6 × 10 6 P
a, polarization dependence is 0.02 nm, insertion loss is 2.5 dB
And obtained satisfactory results. By using PSG for the lower cladding layer, the softening temperature was further increased as compared with the lower cladding layer in the second embodiment, and no sinking or tilting of the core 3 was observed. The lower cladding layer 2 is made of PS
GPSG may be used instead of G.
【００３６】なお、上記実施形態では石英系膜の成膜に
ＴＥＯＳ−Ｏ3ＡＰＣＶＤ法を用いたが、プロセス温度
が１０００℃以下の他のプロセス例えばプラズマＣＶＤ
法や減圧ＣＶＤ法等によっても本実施形態と同様の傾向
を得ることができた。In the above-described embodiment, the TEOS-O 3 APCVD method is used for forming the quartz-based film.
The same tendency as in the present embodiment could be obtained by the method or the low pressure CVD method.
【００３７】上記いずれの実施例においても高温高湿度
中での信頼性加速試験評価の結果では８５℃９０％で１
０００時間経過後も外観上の変質等はほとんど見られ
ず、また損失の変動は０．２ｄＢ以内で安定していた。In any of the above examples, the results of the accelerated reliability test evaluation at a high temperature and a high humidity indicate that 1% at 85 ° C. and 90%.
Even after lapse of 000 hours, almost no deterioration in appearance was observed, and the fluctuation of loss was stable within 0.2 dB.
【００３８】以上述べたようにＡＷＧデバイスなどの光
導波路デバイスのΔλはＰ濃度＋Ｂ濃度に対して線形に
変化しその値が０．０３ｎｍ以下となるようなＰ濃度＋
Ｂ濃度和適正値はプロセスや導波路層構成によって変化
するものの８．８ｗｔ％以上１５ｗｔ％以下の範囲で実
現できる。この時Ｂが３ｗｔ％〜１１ｗｔ％、Ｐは４ｗ
ｔ％〜１２ｗｔ％とした。Ｂを３ｄＢより減らすと軟化
温度が上がり上部クラッド層の埋込が困難であったため
Ｂ濃度は３ｗｔ％以上とした。またＰを４ｗｔ％より減
らしＰ濃度＋Ｂ濃度を９ｗｔ％以上にすると耐水性が著
しく劣化したためＰ濃度は４ｗｔ％以上とした。また、
Ｐ濃度＋Ｂ濃度が１５ｗｔ％を越えると耐水性が著しく
劣化し、伝搬損失が時間とともに劣化する現象が現れた
ためＰ濃度＋Ｂ濃度は１５ｗｔ％以下とした。As described above, Δλ of an optical waveguide device such as an AWG device changes linearly with respect to the P concentration + B concentration, and the P concentration + becomes such that the value becomes 0.03 nm or less.
The appropriate value of the B concentration sum varies depending on the process and the configuration of the waveguide layer, but can be realized in the range of 8.8 wt% to 15 wt%. At this time, B is 3 wt% to 11 wt%, and P is 4 w%.
t% to 12 wt%. If B is reduced below 3 dB, the softening temperature rises and it is difficult to bury the upper cladding layer, so the B concentration was set to 3 wt% or more. Further, when the P content was reduced from 4 wt% to a P concentration + B concentration of 9 wt% or more, the water resistance was significantly deteriorated, so the P concentration was set to 4 wt% or more. Also,
If the P concentration + B concentration exceeds 15 wt%, the water resistance deteriorates remarkably, and a phenomenon that the propagation loss deteriorates with time appears. Therefore, the P concentration + B concentration is set to 15 wt% or less.
【００３９】以上の実施形態では、ＴＥＯＳ―Ｏ3によ
るＡＰＣＶＤ法により成膜した例を示したが、有機ソー
スとしてはＴＥＯＳに限らず、Ｓｉ（ＯＣＨ3）4、Ｓｉ
（ＯＣ3Ｈ7）4等のＳｉのアルコキシドを用いることも
できる。In the above embodiment, an example was shown in which the film was formed by the APCVD method using TEOS-O 3 , but the organic source is not limited to TEOS, but may be Si (OCH 3 ) 4 , Si
Alkoxides of Si such as (OC 3 H 7 ) 4 can also be used.
【００４０】[0040]
【発明の効果】以上示したように、クラッド材料である
高濃度にＰおよびＢが添加されたＢＰＳＧを８００〜１
０００℃という従来より低温でのプロセスを用いて形成
することにより低損失な光導波路デバイスが得られ、偏
光依存性が極めて小さい石英系光導波路デバイス、特に
アレー導波路格子デバイスを得ることが可能となった。As described above, the cladding material, BPSG to which P and B are added at a high concentration is 800 to 1%.
A low-loss optical waveguide device can be obtained by using a process at a temperature lower than the conventional temperature of 000 ° C., and it is possible to obtain a silica-based optical waveguide device having extremely small polarization dependence, particularly an array waveguide grating device. became.
【図１】本発明によるＰ元素とＢ元素重量濃度和と膜中
応力の関係図。FIG. 1 is a diagram showing the relationship between the sum of the weight concentrations of P element and B element and the stress in a film according to the present invention.
【図２】本発明によるＰ元素とＢ元素重量濃度和とΔλ
の関係図。FIG. 2 shows the sum of P element and B element weight concentration and Δλ according to the present invention.
Relationship diagram.
【図３】伝搬損失のアニール温度依存性を示す説明図。FIG. 3 is an explanatory diagram showing annealing temperature dependence of propagation loss.
【図４】本発明の製造方法を示す断面工程図。FIG. 4 is a sectional process view showing the manufacturing method of the present invention.
【図５】従来のアレイ導波路格子を示す平面図。FIG. 5 is a plan view showing a conventional arrayed waveguide grating.
【図６】従来のアレイ導波路格子を示す斜視図。FIG. 6 is a perspective view showing a conventional arrayed waveguide grating.
【図７】従来の石英系膜のドーパント濃度と熱膨張係数
の関係を示す図。FIG. 7 is a diagram showing a relationship between a dopant concentration of a conventional quartz-based film and a coefficient of thermal expansion.
１：Ｓｉ基板 ２：下部クラッド層 ３：コア ４：上部クラッド層 ７：コア層 1: Si substrate 2: lower cladding layer 3: core 4: upper cladding layer 7: core layer
Claims (13)
ア及び上部クラッド層を形成する工程を有し、前記下部
クラッド層及び前記上部クラッド層の両方あるいは前記
上部クラッド層のみを燐及びボロンの少なくともいずれ
かを添加した石英系膜によって形成する光導波路デバイ
スの製造方法において、前記石英系膜はＣＶＤ法を用い
燐元素とボロン元素の重量濃度の和を６．２ｗｔ％以上
１５ｗｔ％以下添加して成膜し、その後前記石英系膜に
８００℃以上１０００℃以下の熱処理を施す工程を備
え、かつ前記石英系膜の膜応力が３×１０7Ｐａ以下で
あることを特徴とする光導波路デバイスの製造方法。A step of forming a lower clad layer, a core, and an upper clad layer on a silicon substrate, wherein at least one of phosphorus and boron is formed on both the lower clad layer and the upper clad layer or only the upper clad layer. In the method of manufacturing an optical waveguide device formed by a quartz-based film to which the above-mentioned is added, the quartz-based film is formed by adding a weight concentration of phosphorus element and boron element by 6.2 wt% or more and 15 wt% or less using a CVD method. Forming a film, and thereafter subjecting the quartz-based film to a heat treatment at 800 ° C. or more and 1000 ° C. or less, and wherein the film stress of the quartz-based film is 3 × 10 7 Pa or less. Method.
ア及び上部クラッド層を形成する工程を有し、前記下部
クラッド層及び前記上部クラッド層の両方あるいは前記
上部クラッド層のみを燐及びボロンの少なくともいずれ
かを添加した石英系膜によって形成する光導波路デバイ
スの製造方法において、前記石英系膜の成膜にはＣＶＤ
法を用い燐元素とボロン元素の重量濃度の和を８．８ｗ
ｔ％以上１５ｗｔ％以下添加して成膜し、その後前記石
英系膜に８００℃以上１０００℃以下の熱処理を施す工
程を備え、かつ前記光導波路デバイスの偏光に依存する
透過中心波長のずれを０．０３ｎｍ以下とすることを特
徴とする光導波路デバイスの製造方法。Forming a lower cladding layer, a core, and an upper cladding layer on a silicon substrate, wherein the lower cladding layer and the upper cladding layer or only the upper cladding layer is at least one of phosphorus and boron. In the method of manufacturing an optical waveguide device formed by a quartz-based film to which the above-mentioned is added, the quartz-based film is formed by CVD.
The sum of the weight concentrations of the phosphorus element and the boron element is 8.8 w
a step of subjecting the quartz-based film to a heat treatment at a temperature of 800 ° C. to 1000 ° C., wherein the deviation of the transmission center wavelength depending on the polarization of the optical waveguide device is reduced to 0%. 0.03 nm or less.
計であることを特徴とする請求項２に記載の光導波路デ
バイスの製造方法。3. The method according to claim 2, wherein the optical waveguide device is a waveguide type optical interferometer.
ン元素重量濃度を３〜１１ｗｔ％とすることを特徴とす
る請求項２または３に記載の光導波路デバイスの製造方
法。4. The method of manufacturing an optical waveguide device according to claim 2, wherein the phosphorus element weight concentration is 4 to 12 wt% and the boron element weight concentration is 3 to 11 wt%.
℃、燐元素とボロン元素の重量濃度の和を１２〜１４ｗ
ｔ％とすることを特徴とする請求項２または３に記載の
光導波路デバイスの製造方法。5. A film forming temperature of 400 ° C. and a heat treatment temperature of 880.
° C, the sum of the weight concentrations of the phosphorus element and the boron element is 12 to 14 w
4. The method of manufacturing an optical waveguide device according to claim 2, wherein the method is t%.
の成膜にテトラエチルオルソシリケートをオゾンにより
分解する常圧ＣＶＤ法を用いることを特徴とする請求項
１〜５のいずれかに記載の光導波路デバイスの製造方
法。6. The optical waveguide device according to claim 1, wherein the upper clad layer and the lower clad layer are formed by a normal pressure CVD method in which tetraethyl orthosilicate is decomposed by ozone. Manufacturing method.
系膜または燐およびゲルマニウムを添加した石英系膜と
することを特徴とする請求項１〜６のいずれかに記載の
光導波路デバイスの製造方法。7. The optical waveguide device according to claim 1, wherein said lower cladding layer is a quartz-based film to which phosphorus is added or a quartz-based film to which phosphorus and germanium are added. Method.
ア、上部クラッド層を有し、前記上部クラッド層及び前
記下部クラッド層の両方あるいは前記上部クラッド層の
みを燐及びボロンの少なくともいずれかを添加した石英
系膜とした光導波路デバイスにおいて、前記石英系膜中
の燐元素とボロン元素の重量濃度の和が８．８ｗｔ％以
上１５ｗｔ％以下であり、前記光導波路デバイスの偏光
に依存する透過中心波長のずれが０．０３ｎｍ以下であ
ることを特徴とする光導波路デバイス。8. A silicon substrate having a lower cladding layer, a core, and an upper cladding layer, wherein at least one of phosphorus and boron is added to both the upper cladding layer and the lower cladding layer or only the upper cladding layer. In the optical waveguide device made of a quartz-based film, the sum of the weight concentrations of the phosphorus element and the boron element in the quartz-based film is 8.8 wt% or more and 15 wt% or less, and the transmission center wavelength dependent on the polarization of the optical waveguide device. An optical waveguide device having a deviation of 0.03 nm or less.
ア、上部クラッド層を有する光導波路デバイスにおい
て、前記クラッド層のうち少なくとも上部クラッド層は
燐及びボロンを添加した石英系膜であり、前記下部クラ
ッド層は前記上部クラッド層よりも軟化温度の高い材料
からなり、前記石英系膜中の燐元素とボロン元素の重量
濃度の和が８．８ｗｔ％以上１５ｗｔ％以下であり、前
記光導波路デバイスの偏光に依存する透過中心波長のず
れが０．０３ｎｍ以下であることを特徴とする光導波路
デバイス。9. An optical waveguide device having a lower cladding layer, a core, and an upper cladding layer on a silicon substrate, wherein at least the upper cladding layer of the cladding layer is a quartz-based film doped with phosphorus and boron. The layer is made of a material having a higher softening temperature than the upper cladding layer, the sum of the weight concentrations of the phosphorus element and the boron element in the quartz-based film is 8.8 wt% or more and 15 wt% or less, and the polarization of the optical waveguide device is performed. Wherein the shift of the transmission center wavelength depending on the wavelength is 0.03 nm or less.
の重量濃度の和が１２〜１４ｗｔ％であり、該石英系膜
の膜応力が８．３×１０6Ｐａ以下であることを特徴と
する請求項８または９に記載の光導波路デバイス。10. The quartz film according to claim 1, wherein the sum of the weight concentrations of the phosphorus element and the boron element in the quartz film is 12 to 14 wt%, and the film stress of the quartz film is 8.3 × 10 6 Pa or less. The optical waveguide device according to claim 8 or 9, wherein
渉計であることを特徴とする請求項８〜１０のいずれか
に記載の光導波路デバイス。11. The optical waveguide device according to claim 8, wherein said optical waveguide device is a waveguide type optical interferometer.
系膜または燐およびゲルマニウムを添加した石英系膜で
あることを特徴とする請求項９または１０に記載の光導
波路デバイス。12. The optical waveguide device according to claim 9, wherein said lower cladding layer is a quartz-based film to which phosphorus is added or a quartz-based film to which phosphorus and germanium are added.
続した第１のスラブ導波路と、少なくとも一本以上の出
力導波路を接続した第２のスラブ導波路をアレイ導波路
の両端に有するアレー導波路格子型光合分波器を含むこ
とを特徴とする請求項８〜１２のいずれかに記載の光導
波路デバイス。13. An array having a first slab waveguide connected to at least one or more input waveguides and a second slab waveguide connected to at least one or more output waveguides at both ends of an arrayed waveguide. 13. The optical waveguide device according to claim 8, further comprising a waveguide grating type optical multiplexer / demultiplexer.
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| JP22946499A JP3950588B2 (en) | 1999-08-13 | 1999-08-13 | Manufacturing method of optical waveguide device |
| US09/639,747 US6396988B1 (en) | 1999-08-13 | 2000-08-14 | Optical waveguide device and method of forming the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004214170A Division JP2004334237A (en) | 2004-07-22 | 2004-07-22 | Optical waveguide device |
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| Publication Number | Publication Date |
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| JP2001051145A true JP2001051145A (en) | 2001-02-23 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6847772B2 (en) | 2002-02-14 | 2005-01-25 | Fujitsu Limited | Planar optical waveguide device |
| JP2013210623A (en) * | 2012-02-28 | 2013-10-10 | Furukawa Electric Co Ltd:The | Optical waveguide device and method of manufacturing the same |
| US10371890B2 (en) | 2013-02-26 | 2019-08-06 | Furukawa Electric Co., Ltd. | Optical waveguide element |
-
1999
- 1999-08-13 JP JP22946499A patent/JP3950588B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6847772B2 (en) | 2002-02-14 | 2005-01-25 | Fujitsu Limited | Planar optical waveguide device |
| JP2013210623A (en) * | 2012-02-28 | 2013-10-10 | Furukawa Electric Co Ltd:The | Optical waveguide device and method of manufacturing the same |
| US10371890B2 (en) | 2013-02-26 | 2019-08-06 | Furukawa Electric Co., Ltd. | Optical waveguide element |
| US11125942B2 (en) | 2013-02-26 | 2021-09-21 | Furukawa Electric Co., Ltd. | Optical waveguide element |
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| Publication number | Publication date |
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