JP2001044180A - Ultra precise processing method by plasma and device thereof - Google Patents

Ultra precise processing method by plasma and device thereof

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Publication number
JP2001044180A
JP2001044180A JP11219348A JP21934899A JP2001044180A JP 2001044180 A JP2001044180 A JP 2001044180A JP 11219348 A JP11219348 A JP 11219348A JP 21934899 A JP21934899 A JP 21934899A JP 2001044180 A JP2001044180 A JP 2001044180A
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JP
Japan
Prior art keywords
workpiece
electrode
pressure
reaction gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP11219348A
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Japanese (ja)
Inventor
Yusuke Ehata
裕介 江畑
Toru Okuda
徹 奥田
Yuzo Mori
勇▲蔵▼ 森
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Sharp Corp
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Sharp Corp
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Priority to JP11219348A priority Critical patent/JP2001044180A/en
Publication of JP2001044180A publication Critical patent/JP2001044180A/en
Withdrawn legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an ultra precise processing method using plasma which can process the surface of a work with high efficiency. SOLUTION: A precise processing method, which processes a work arranged in a first reactive gas atmosphere using plasma, includes the first step of forming a wall face opposed to a work J so that a passage of low inductance for reactive gas is constituted and supplying the reactive gas to the passage of low conductance and making a second reactive gas atmosphere partially in this passage of low conductance, a second step causing a plasma P to be generated in a second reactive atmosphere, a third step of producing active seeds by activating the reactive gas in the second reactive gas atmosphere by the plasma P, and a fourth step of producing reactive products by causing chemical reaction of the active seeds and the work on each other and processing the work J by gasifying the reactive products.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はプラズマによる超精
密加工方法及びその装置に関し、特に半導体、液晶、各
種デバイス多層構造における表面段差平坦化、平滑化、
各種材料における平坦化、平滑化、および非平面形状材
料における平滑化を、ドライプロセスによって、レジス
ト等の表面保護膜を用いることなく、高速にかつ清浄雰
囲気にて行うプラズマによる超精密加工方法及びその装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-precision processing method and apparatus using plasma, and more particularly to flattening and smoothing of surface steps in a multilayer structure of semiconductors, liquid crystals and various devices.
Ultra-precision processing method using plasma to perform flattening, smoothing in various materials, and smoothing in non-planar shape materials at high speed and in a clean atmosphere by a dry process without using a surface protective film such as a resist and the like. Related to the device.

【０００２】[0002]

【従来の技術】半導体デバイス用シリコンウエハ、ゲル
マニウムウエハ表面に凹凸が存在すると、フォトリソグ
ラフィイ工程において焦点ずれをおこすため、高精度に
平滑化、平坦化する必要がある。また更にＸ線用Ｓｉミ
ラー、レーザー用タングステン、モリブデンミラー等の
表面も高精度に平滑化、平坦化若しくは形状加工されて
いなければならない。このように各種機能性材料を高精
度に平滑化、平坦化若しくは形状加工を行う技術は必須
となっている。2. Description of the Related Art Irregularities on the surfaces of silicon wafers and germanium wafers for semiconductor devices cause a defocus in a photolithography process, so that they need to be smoothed and flattened with high precision. Further, the surface of the X-ray Si mirror, laser tungsten, molybdenum mirror, etc., must also be smoothed, flattened or shaped with high precision. As described above, a technique for smoothing, flattening, or shaping various functional materials with high precision is essential.

【０００３】従来、各種材料の平坦化、平滑化、または
非平面形状材料の平滑化を行う加工法にはポリッシング
加工が存在する。特に半導体、液晶、各種デバイスにお
いて、多層配線、多層成膜により、形成された表面段差
を高精度に平滑平坦化する加工法にはＣＭＰ加工等がす
でに公知である。Conventionally, there is a polishing method as a processing method for flattening and smoothing various materials or smoothing a non-planar material. In particular, in semiconductors, liquid crystals, and various devices, a CMP method or the like is already known as a processing method for smoothing and flattening a formed surface step with high precision by multilayer wiring and multilayer film formation.

【０００４】さらに、ドライプロセスによって上記平滑
平坦化を行う手法のうち、低圧力気体雰囲気のプラズマ
を用いる手法には、エッチバック平坦化法が存在する。
また高圧力気体雰囲気のプラズマを用いる手法にはプラ
ズマＣＶＭ法が存在する。[0004] Among the methods for performing the above-mentioned smooth flattening by a dry process, there is an etch-back flattening method as a method using plasma in a low-pressure gas atmosphere.
In addition, a plasma CVM method exists as a method using plasma in a high-pressure gas atmosphere.

【０００５】上記プラズマＣＶＭ法は特開平１−１２５
８２９号公報、特開平４−２４６１８４号公報および特
開平５−２３４９４２号公報に開示されている。その実
施の形態の断面図は図２２Ａ及び図２２Ｂであり、これ
を用いて説明する。The above-mentioned plasma CVM method is disclosed in Japanese Patent Laid-Open No. 1-125.
No. 829, JP-A-4-246184 and JP-A-5-234942. FIGS. 22A and 22B are cross-sectional views of the embodiment, which will be described with reference to FIGS.

【０００６】図２２Ａを参照して、超精密加工装置２２
００Ａは、被加工物４２と加工用電極４１とを、被加工
物材質によって決定される反応ガスの大気圧雰囲気中に
配し、被加工物４２と加工用電極４１との間に高周波電
力供給部４３によって直流電圧若しくは高周波電圧を印
加して、加工用電極４１と被加工物４２との間に、大気
圧に起因する局所領城プラズマ４９Ａを発生させる。超
精密加工装置２２００Ａは、局所領城プラズマ４９Ａの
発生に伴う反応ガスに基づく中性ラジカルを発生させ、
中性ラジカルを被加工物４２と化学反応させ、被加工物
４２の原子を揮発性物質に変化させる事によって被加工
物４２の原子を除去する。[0006] Referring to FIG.
00A arranges the workpiece 42 and the processing electrode 41 in an atmospheric pressure atmosphere of a reaction gas determined by the material of the workpiece, and supplies high-frequency power between the workpiece 42 and the processing electrode 41. A DC voltage or a high-frequency voltage is applied by the unit 43 to generate a local plasma 49A caused by the atmospheric pressure between the processing electrode 41 and the workpiece 42. The ultra-precision processing apparatus 2200A generates neutral radicals based on the reaction gas accompanying the generation of the local territory plasma 49A,
The neutral radicals are chemically reacted with the workpiece 42 to change the atoms of the workpiece 42 into volatile substances, thereby removing the atoms of the workpiece 42.

【０００７】詳細には超精密加工装置２２００Ａでは、
加工用電極４１の被加工物対向部形状を電界が分散する
平面４１Ａとなし、更には加工用電極４１の内部に、反
応ガス供給部４５によって供給された反応ガスを含む雰
囲気気体を形成し、更に反応ガスを含む雰囲気気体を噴
出する加工面側に開口した多数のガス噴出口４８Ａを設
け、ガス噴出口４８Ａより加工用電極４１と被加工物４
２との間の局所領域プラズマ４９Ａに反応ガスを含む雰
囲気気体を噴出させる事により、平坦化及び平滑化を行
っている。ここで加工用電極４１と被加工物４２との間
隔の調整を、加工用電極４１若しくは被加工物４２の一
方を固定し、他方を被加工物走査試料台４７に接続され
たＺステージを移動させることによって行い、あるいは
反応ガス噴出口４８Ａから噴出する雰囲気気体の動圧に
よって加工用電極４１を浮上させる事で実現している。Specifically, in the ultra-precision processing apparatus 2200A,
The workpiece facing portion of the processing electrode 41 is formed into a flat surface 41A in which an electric field is dispersed, and further, inside the processing electrode 41, an atmosphere gas including a reaction gas supplied by a reaction gas supply unit 45 is formed. Further, a large number of gas ejection ports 48A are provided on the machining surface side for ejecting the atmosphere gas containing the reaction gas, and the machining electrode 41 and the workpiece 4 are provided from the gas ejection ports 48A.
By jetting an atmosphere gas containing a reaction gas into the local region plasma 49A between the first and second regions, flattening and smoothing are performed. Here, the distance between the processing electrode 41 and the workpiece 42 is adjusted by fixing one of the processing electrode 41 and the workpiece 42 and moving the Z stage connected to the workpiece scanning sample table 47 to the other. Or by floating the machining electrode 41 by the dynamic pressure of the atmospheric gas ejected from the reaction gas ejection port 48A.

【０００８】さらに加工用電極４１は、反応ガス排出部
４６に接続された図示しない反応ガス排出口を持ち、反
応ガス排出口より被加工物４２と反応ガスとの化学反応
によって生じた反応生成物の除去を行っている。Further, the processing electrode 41 has a reaction gas outlet (not shown) connected to the reaction gas outlet 46, and a reaction product generated by a chemical reaction between the workpiece 42 and the reaction gas from the reaction gas outlet. Has been removed.

【０００９】図２２Ｂを参照して、従来技術の他の例を
説明する。超精密加工装置２２００Ｂでは、図２３Ａに
おける加工用電極４１を、ガス供給路を有する外部電極
５２と、外部電極５２の内部に絶縁して配した内部電極
５３とにより構成し、内部電極５３と外部電極５２との
間に局所領域ブラズマ４９Ｂを発生させる。局所領域ブ
ラズマ４９Ｂの発生に伴い、反応ガスに基づく中性ラジ
カルが発生し、中性ラジカルを図２３Ａと同様に、加工
面側に開口した多数の反応ガス噴出口４８Ｂより噴出さ
せる事により、被加工物４２の平坦化及び平滑化行って
いる。Referring to FIG. 22B, another example of the prior art will be described. In the ultra-precision processing apparatus 2200B, the processing electrode 41 in FIG. 23A is constituted by an external electrode 52 having a gas supply path and an internal electrode 53 insulated inside the external electrode 52. A local area plasma 49B is generated between the electrode 52 and the electrode 52. With the generation of the local region plasma 49B, neutral radicals based on the reaction gas are generated, and the neutral radicals are ejected from a large number of reaction gas outlets 48B opened to the processing surface side, as in FIG. The workpiece 42 is flattened and smoothed.

【００１０】[0010]

【発明が解決しようとする課題】しかしながら、上記Ｃ
ＭＰ加工、ポリッシング加工、エッチバック平坦化法に
おいては以下のような問題点がある。 ポリッシング加工は液中に混濁させた微粒子による微
小な脆性破壊を利用したものであるため、被加工物表面
に損傷を与え、また加工速度が遅い。 ＣＭＰ加工法も同様に、化学的作用を一部用いるとし
ても加工速度は遅い。However, the above C
The MP processing, polishing processing, and etch-back flattening method have the following problems. Since the polishing process utilizes minute brittle fracture caused by fine particles turbid in a liquid, the surface of the workpiece is damaged and the processing speed is slow. Similarly, in the CMP processing method, the processing speed is low even if a chemical action is partially used.

【００１１】またＣＭＰ加工法は液中に微粒子を混濁さ
せるウエットプロセスであるため、微粒子の除去、洗浄
に多くの時間を費やし、洗浄後も表面に残留微粒子が付
着するのでプロセスの歩留りが悪い。 半導体デバイスの製造プロセスにおける上記ポリッシ
ング加工、ＣＭＰ加工の前後工程はプラズマを用いたド
ライプロセスである事が多い為、ポリッシング加工、Ｃ
ＭＰ加工は、前後工程との整合性が悪い。 ドライプロセスによって平坦化、平滑化を行うエッチ
バック平坦化法は、低圧力気体雰囲気中にプラズマを発
生させる為、加工速度が遅い。また形成されたレジスト
膜、及び加工後の表面に僅かに残存するレジスト膜の除
去に多くの時間を費やすので、プロセスの生産性が悪
い。In addition, since the CMP processing method is a wet process in which fine particles are turbid in a liquid, much time is required for removing and cleaning the fine particles, and the residual fine particles adhere to the surface even after the cleaning, resulting in poor process yield. The steps before and after the polishing and the CMP in the semiconductor device manufacturing process are often dry processes using plasma.
MP processing has poor consistency with the preceding and following processes. The etch-back flattening method of flattening and smoothing by a dry process generates plasma in a low-pressure gas atmosphere, and therefore has a low processing speed. In addition, much time is required to remove the formed resist film and the resist film slightly remaining on the processed surface, resulting in poor process productivity.

【００１２】またプラズマＣＶＭ法については以下の問
題点がある。 中性ラジカルと被加工物との化学反応によって発生し
た反応生成物が、プラズマの外部に拡散した後、雰囲気
体中を長時間浮遊し、高圧力に起因する平均自由工程の
短さから互いに衝突を繰り返し、反応生成物の粒径、粒
子数を増大させ、被加工物表面に再付着する事により加
工特性が劣化する。反応生成物が反応容器内壁に付着す
る事により、プロセス自体の歩留まりが悪化する。Further, the plasma CVM method has the following problems. The reaction product generated by the chemical reaction between the neutral radical and the workpiece diffuses out of the plasma, then floats in the atmosphere for a long time and collides with each other due to the short mean free path caused by the high pressure Are repeated, the particle size and the number of particles of the reaction product are increased, and the reaction characteristics are deteriorated by re-adhering to the surface of the workpiece. When the reaction product adheres to the inner wall of the reaction vessel, the yield of the process itself deteriorates.

【００１３】また被加工物によっては、反応容器内雰囲
気圧力が反応生成物の蒸気圧以上の圧力になるので、反
応生成物が気体状態にならず液体状態となり、反応生成
物が被加工物表面及び反応容器内壁に付着する。 また、反応容器内を大気圧近傍の高圧力に充填させる
為、ガス漏洩時に反応容器外に漏洩するガスのモル数が
多くなるので、精密加工装置の安全性が低下する。 また被加工物を精密加工装置から搬出するときの反応
ガスパージの際、反応ガス排気に時間がかかるので、加
工速度は速いが、精密加工装置全体のスループットが低
くなる。 反応ガスに基づく中性ラジカルあるいは反応ガスを電
極側に設けられた多数の反応ガス噴出口から噴出させ、
被加工面に中性ラジカルの流れを衝突させる事になるの
で、噴出口直下では周囲より加工量が多くなり、加工量
分布が発生し、形状精度が低下する。 また、図２２Ａに示される方式においては、加工用電
極４１をカソード電極とし、被加工物４２をアノード電
極として局所領域プラズマ４９Ａを発生させる為、被加
工物４２の全体加工の際、加工用電極４１の移動により
電力供給路の等価回路が変化するので、加工量分布が発
生し、被加工物の仕上げ面形状精度を悪化させる。Further, depending on the workpiece, the atmospheric pressure in the reaction vessel becomes higher than the vapor pressure of the reaction product, so that the reaction product is not in a gaseous state but in a liquid state, and the reaction product is in a liquid state. And adhere to the inner wall of the reaction vessel. Further, since the inside of the reaction vessel is filled to a high pressure near the atmospheric pressure, the number of moles of the gas leaking out of the reaction vessel at the time of gas leakage increases, so that the safety of the precision processing apparatus decreases. In addition, when purging the reaction gas when the workpiece is carried out of the precision processing device, it takes a long time to exhaust the reaction gas, so that the processing speed is high, but the throughput of the entire precision processing device is low. Neutral radicals or reaction gas based on the reaction gas are ejected from a large number of reaction gas ejection ports provided on the electrode side,
Since the flow of the neutral radicals impinges on the surface to be processed, the processing amount becomes larger immediately below the jet port than the surrounding area, and the processing amount distribution occurs, and the shape accuracy is reduced. In the method shown in FIG. 22A, the local electrode plasma 49A is generated by using the processing electrode 41 as a cathode electrode and the processing object 42 as an anode electrode. Since the equivalent circuit of the power supply path changes due to the movement of 41, the distribution of the machining amount occurs, and the accuracy of the finished surface shape of the workpiece is deteriorated.

【００１４】図２２Ｂに示される方式においては、局所
領域プラズマ４９Ｂから出た活性種が、被加工物表面に
到達する前に活性を失うので、高加工速度を達成できな
い。In the method shown in FIG. 22B, a high processing speed cannot be achieved because active species emitted from the local region plasma 49B lose their activity before reaching the surface of the workpiece.

【００１５】以下上記プラズマＣＶＭの問題点につ
いてさらに詳細に説明する。（反応生成物の被加工物表
面への付着による加工特性劣化の機構について）上記し
た反応生成物の被加工物表面への付着によるプロセス歩
留り悪化、および加工特性劣化の機構について図２２
Ａ、図２２Ｂ及び図２４に基づいて述べる。Hereinafter, the problem of the plasma CVM will be described in more detail. (Regarding Mechanism of Deterioration of Processing Characteristics Due to Adhesion of Reaction Product to Workpiece Surface) Mechanism of Deterioration of Process Yield and Deterioration of Processing Characteristics Due to Adhesion of Reaction Product to Surface of Workpiece FIG.
A, FIG. 22B and FIG.

【００１６】特開平５−２３４９４２号公報に開示され
たプラズマＣＶＭの大気圧周辺雰囲気に充填された反応
容器中には、反応ガス分子以外に下記の反応生成物が存
在する。 上記被加工物との反応によって生じた揮発性分子や不
揮発性分子 上記不揮発性分子が凝縮した不揮発性物体 炭化粉末物、金属粉末等と上記反応ガス分子、上記揮
発性分子、及び不揮発性分子、上記不揮発性物体などが
互いに付着・重合した雰囲気パーティクル（炭化粉末、
金属粉末等自体も含む） プラズマ中の構成原子が複雑な形で化合して発生し
た、非常に不安定で反応性の高い高反応性分子 プラズマ中に発生した微小パーティクルは、即座に再分
解され、影響を及ぼさない事を述べる。[0016] In a reaction vessel filled in the atmosphere around the atmospheric pressure of the plasma CVM disclosed in JP-A-5-234942, the following reaction products are present in addition to the reaction gas molecules. Volatile molecules and non-volatile molecules generated by the reaction with the workpiece Non-volatile objects in which the non-volatile molecules are condensed Carbonized powder, metal powder and the like, the above-mentioned reaction gas molecules, the above-mentioned volatile molecules, and non-volatile molecules, Atmosphere particles (carbonized powder,
Extremely unstable and highly reactive highly reactive molecules generated by the composition of atoms in the plasma in a complex form. Small particles generated in the plasma are immediately re-decomposed. State that it has no effect.

【００１７】上記のような、プラズマ外部に放出された
反応生成物は、互いに凝縮し若しく容易に雰囲気パーテ
ィクルと凝縮し、雰囲気パーティクルの粒径を増大さ
せ、また粒径の大きい雰囲気パーティクルの粒子数を増
大させる。即ち、プラズマＣＶＭのような高圧力に充填
した反応ガスにより上記雰囲気パーティクルの数、粒径
を増大させる結果となる。The reaction products released to the outside of the plasma as described above condense with each other and easily condense with the atmosphere particles, increase the particle diameter of the atmosphere particles, and increase the particle size of the atmosphere particles. Increase the number. That is, the number and the particle size of the atmospheric particles are increased by the reaction gas filled at a high pressure such as the plasma CVM.

【００１８】上記した大きい粒径の雰囲気パーティクル
の及ぼす影響について以下に示す。The effects of the above-mentioned large-diameter atmospheric particles will be described below.

【００１９】加工中、プラズマ雰囲気においても即座に
全てが再分解されず、再分解されるまでの間、付着点の
上記加工物の加工を阻害し、雰囲気パーティクル付着点
と非付着点の加工速度の違いにより被加工物の仕上げ面
粗さを悪化させる。During processing, not all are immediately re-decomposed even in a plasma atmosphere. Until the re-decomposition, the processing of the above-described workpiece at the adhesion point is inhibited, and the processing speed of the atmosphere particle adhesion point and non-adhesion point is reduced. The surface roughness deteriorates the finished surface of the workpiece.

【００２０】また加工後では、被加工物表面５７に大粒
径雰囲気パーティクル５５が再付着した状態で、さらに
成膜を行う場合、図２４に示されるように成膜５６が形
成された後、大粒径雰囲気パーティクル５５の付着点に
おいて、大粒径雰囲気パーティクル５５上に膜５８が成
膜され、大粒径雰囲気パーティクル５５の直下が成膜さ
れず、その後のプロセスに悪影響を及ぼす。例えば成膜
５８が金属成膜であり、その後配線パターニングを行う
場合等は、大粒径雰囲気パーティクル５５直下の非成膜
部分において金属配線の断線等を生じる事等が考えられ
る。After the processing, when the film is further formed in a state in which the large-diameter atmosphere particles 55 are re-adhered to the surface 57 of the workpiece, after the film 56 is formed as shown in FIG. At the attachment point of the large particle size atmosphere particles 55, the film 58 is formed on the large particle size atmosphere particles 55, and the film is not formed immediately below the large particle size atmosphere particles 55, which adversely affects the subsequent process. For example, in a case where the film 58 is a metal film and then wiring patterning is performed, it is conceivable that the metal wiring may be disconnected in a non-film forming portion immediately below the large particle size atmosphere particles 55.

【００２１】ここで、上記プラズマＣＶＭは上記反応容
器内を大気圧雰囲気の高圧力に充填させる為、上記雰囲
気パーティクルが、上記反応容器内を長時間浮遊し、そ
の間、高圧力雰囲気に起因する平均自由工程の短さか
ら、上記高反応性分子と多数衝突、凝縮を繰り返し、雰
囲気パーティクルの粒径を増大させ、また粒径の大きい
雰囲気パーティクルの粒子数を増大させ、加工中及び加
工後に被加工物両面に再付着する事により加工特性を低
下させ、またプロセスの歩留まりを悪化させるものと考
えられる。Here, the plasma CVM causes the inside of the reaction vessel to be filled with the high pressure of the atmospheric pressure atmosphere, so that the atmosphere particles float in the reaction vessel for a long time, and meanwhile, meanwhile, the average particle caused by the high pressure atmosphere is generated. Due to the shortness of the free process, repeated collisions and condensation with the highly reactive molecules are repeated, increasing the particle size of the atmospheric particles, and increasing the number of atmospheric particles having a large particle size. It is considered that by re-adhering to both surfaces of the object, the processing characteristics are lowered and the yield of the process is deteriorated.

【００２２】この様な場合、上記反応容器内の雰囲気圧
力を低下させ、上記雰囲気パーティクルの粒径及び粒子
数の増大を抑制する事も考えられる。しかしその場合に
は、同時に上記プラズマ部の圧力も低下し、加工速度を
低下させ、ひいてはプロセスのスループットを悪化させ
る事となる。これはプラズマＣＶＭ自体が原理的に反応
容器内に高圧力反応ガス雰囲気を充填し、プラズマを発
生させる事によって加工を行う加工法である事に起因す
る。In such a case, it is conceivable to reduce the atmospheric pressure in the reaction vessel to suppress an increase in the particle size and number of the atmospheric particles. However, in such a case, the pressure of the plasma section also decreases at the same time, thereby lowering the processing speed and, consequently, the process throughput. This is due to the fact that the plasma CVM itself is a processing method in which the processing is performed in principle by filling the reaction vessel with a high-pressure reaction gas atmosphere and generating plasma.

【００２３】また更に金属材料、例えばタングステン、
モリブデン等及びそれらを含む材料を加工する場合にお
いては主たる反応生成物はＷＦ6、ＭｏＦ6であり、その
大気圧雰囲気における沸点は、それぞれ１７．７℃と３
５．０℃であるため、反応生成物は気体でなく液体状態
になり、上記被加工物表面、上記反応容器内壁に付着
し、更に歩留りを悪化させる。 （噴出口直下において加工を行う場合に発生する形状精
度低下について）加工後の被加工物表面に発生する研磨
ピッチによる平坦度低下について図２２Ａ、図２２Ｂお
よび図２３に基づいて述べる。Still further, a metal material such as tungsten,
When processing molybdenum or the like and materials containing them, the main reaction products are WF 6 and MoF 6 , whose boiling points in the atmospheric pressure atmosphere are 17.7 ° C. and 3 ° C., respectively.
Since the temperature is 5.0 ° C., the reaction product becomes a liquid state instead of a gas, and adheres to the surface of the workpiece and the inner wall of the reaction vessel, further deteriorating the yield. (Regarding Degradation of Shape Accuracy that Occurs When Processing is Performed Immediately Below Jet Port) A reduction in flatness due to a polishing pitch generated on the surface of a workpiece after processing will be described with reference to FIGS.

【００２４】特開平５−２３４９４２号公報に開示され
たプラズマＣＶＭすなわち図２２Ａにおいては、反応ガ
ス噴出口４８Ａより噴出した反応ガス噴出流５０は、被
加工物表面によって進行方向を被加工物表面に垂直な方
向の流れから、被加工物表面に沿った方向の流れに変え
られる為、反応ガス噴出流５０は反応ガス噴出口４８Ａ
より被加工物４２の表面に垂直に衝突し、反応ガス噴出
口４８Ａの直下が反応ガス噴出口４８Ａの周辺より加工
量が多くなり、図２３に示されるような加工量分布５４
を示すのである。上記図２２Ｂの様に、電極内部の局所
領域プラズマ４９Ｂにより反応ガスに基づく気体活性種
を生成し、反応ガス噴出口４８Ｂより被加工物４２へ噴
出させる場合においても同様の加工量分布を示す。In the plasma CVM disclosed in Japanese Unexamined Patent Publication No. Hei 5-234942, that is, in FIG. 22A, the flow direction of the reaction gas jet 50 jetted from the reaction gas jet port 48A is changed by the surface of the workpiece toward the surface of the workpiece. Since the flow in the vertical direction can be changed to the flow in the direction along the surface of the workpiece, the reactive gas jet 50 flows into the reactive gas outlet 48A.
The surface of the workpiece 42 collides more vertically, and the amount of processing directly below the reaction gas outlet 48A becomes larger than that around the reaction gas outlet 48A, and the processing amount distribution 54 as shown in FIG.
It is shown. As shown in FIG. 22B, the same processing amount distribution is shown in a case where a gas active species based on a reaction gas is generated by the local region plasma 49B inside the electrode and ejected to the workpiece 42 from the reaction gas outlet 48B.

【００２５】これは反応ガスに基づく気体活性種若しく
は反応ガスを、電極側に設けられた多数の反応ガス噴出
口４８Ａから噴出させ、被加工物４２の表面に衝突させ
る事に起因し、図２２Ａ及び図２２Ｂに示されるＣＶＭ
において、被加工物４２の平坦化を行う際に、加工後の
被加工物表面に発生する研磨ピッチによる平坦度低下を
招くこととなる。This is because gaseous active species based on the reaction gas or the reaction gas are ejected from a large number of reaction gas ejection ports 48A provided on the electrode side and collide with the surface of the workpiece 42, as shown in FIG. And the CVM shown in FIG. 22B
In flattening the workpiece 42, the flatness is reduced due to the polishing pitch generated on the surface of the workpiece after processing.

【００２６】本発明の目的は、被加工物表面を高能率に
加工することができるプラズマによる超精密加工方法及
びその装置を提供する事にある。An object of the present invention is to provide an ultra-precision machining method using plasma and an apparatus therefor capable of machining a workpiece surface with high efficiency.

【００２７】本発明の他の目的は、反応生成物が凝縮
し、被加工物の表面に再付着する事なく清浄に加工する
事が出来、被加工物の表面の微小凸部を平滑化、平坦化
するプラズマによる超精密加工方法及びその装置を提供
する事にある。Another object of the present invention is to enable a clean processing without condensing the reaction product and re-adhering to the surface of the workpiece, and smoothing the minute projections on the surface of the workpiece. An object of the present invention is to provide an ultra-precision processing method and an apparatus therefor using plasma to be flattened.

【００２８】[0028]

【課題を解決するための手段】本発明に係るプラズマに
よる精密加工方法は、第１の反応ガス雰囲気中に配され
た被加工物をプラズマを用いて加工する精密加工方法で
あって、反応ガスの低コンダクタンスな流路が構成され
るように、前記被加工物に対向する壁面が形成され、前
記反応ガスを前記低コンダクタンスな流路へ供給して、
第２の反応ガス雰囲気を前記低コンダクタンスな流路に
局所的に形成する第１ステップと、前記第２の反応ガス
雰囲気中で前記プラズマを発生させる第２ステップと、
前記プラズマにより前記第２の反応ガス雰囲気中の前記
反応ガスを活性化して活性種を生成する第３ステップ
と、前記活性種と前記被加工物とを化学反応させて反応
生成物を生成し、前記反応生成物を気化させて前記被加
工物を加工する第４ステップとを包含し、そのことによ
り上記目的が達成される。A precision processing method using plasma according to the present invention is a precision processing method for processing a workpiece disposed in a first reaction gas atmosphere using plasma, the method comprising: As a low conductance flow path is formed, a wall surface facing the workpiece is formed, and the reaction gas is supplied to the low conductance flow path,
A first step of locally forming a second reaction gas atmosphere in the low conductance flow path, a second step of generating the plasma in the second reaction gas atmosphere,
A third step of activating the reaction gas in the second reaction gas atmosphere by the plasma to generate an active species, and chemically reacting the active species with the workpiece to generate a reaction product; And a fourth step of processing the workpiece by vaporizing the reaction product, thereby achieving the above object.

【００２９】前記第２の反応ガス雰囲気中で発生した前
記プラズマ部の全ての圧力が、前記第１の反応ガス雰囲
気の圧力よりも大きくてもよい。[0029] All the pressures of the plasma section generated in the second reaction gas atmosphere may be higher than the pressure of the first reaction gas atmosphere.

【００３０】前記第１の反応ガス雰囲気の圧力は、少な
くとも１気圧以下であってもよい。[0030] The pressure of the first reaction gas atmosphere may be at least 1 atm or less.

【００３１】前記壁面は、前記被加工物を加工する加工
用電極に形成され、前記第２ステップは、前記加工用電
極に電力を印加するステップを含んでもよい。[0031] The wall surface may be formed on a processing electrode for processing the workpiece, and the second step may include a step of applying power to the processing electrode.

【００３２】前記電力は、周波数１０ＭＨｚ以上１ＧＨ
ｚ以下の高周波電力を含んでもよい。The power is 10 MHz or more and 1 GH
It may include high-frequency power of z or less.

【００３３】前記電力は、周波数１ＧＨｚ以上のマイク
ロ波電力を含んでもよい。[0033] The power may include microwave power having a frequency of 1 GHz or more.

【００３４】本発明に係る精密加工装置は、第１の反応
ガス雰囲気中に配された被加工物をプラズマを用いて加
工する精密加工装置であって、前記プラズマを発生する
プラズマ発生手段を備え、前記プラズマ発生手段には反
応ガスの低コンダクタンスな流路が構成されるように、
前記被加工物に対向する壁面が形成され、前記反応ガス
は前記低コンダクタンスな流路へ供給され、前記第１の
反応ガス雰囲気の第１圧力よりも大きい第２圧力を有す
る第２の反応ガス雰囲気を前記低コンダクタンスな流路
に局所的に形成し、前記プラズマ発生手段は前記第２の
反応ガス雰囲気中で前記プラズマを発生させ、前記プラ
ズマは前記第２の反応ガス雰囲気中の前記反応ガスを活
性化して活性種を生成し、前記活性種と前記被加工物と
が化学反応して反応生成物を生成し、前記反応生成物を
気化させるように前記被加工物を加工し、前記プラズマ
発生手段は、前記第２の反応ガス雰囲気中で発生した前
記プラズマ部の全ての圧力が、前記第１の反応ガス雰囲
気の圧力よりも大きく、そのことにより上記目的が達成
される。A precision processing apparatus according to the present invention is a precision processing apparatus for processing a workpiece disposed in a first reaction gas atmosphere by using plasma, comprising a plasma generating means for generating the plasma. So that a low conductance flow path of the reaction gas is formed in the plasma generation means,
A wall is formed facing the workpiece, the reactant gas is supplied to the low conductance flow path, and a second reactant gas having a second pressure greater than a first pressure of the first reactant gas atmosphere Forming an atmosphere locally in the low-conductance flow path, the plasma generating means generating the plasma in the second reaction gas atmosphere, and the plasma generating the plasma in the second reaction gas atmosphere; Activate to generate active species, the active species and the workpiece to undergo a chemical reaction to generate a reaction product, process the workpiece to vaporize the reaction product, the plasma In the generating means, all the pressures of the plasma section generated in the second reaction gas atmosphere are higher than the pressure of the first reaction gas atmosphere, whereby the object is achieved.

【００３５】前記プラズマ発生手段は、前記被加工物と
対向して設けられる加工用電極と、前記加工用電極に電
力を印加する電源とを含み、前記加工用電極は、前記電
源から印加される電力により前記第２の反応ガス雰囲気
中で前記プラズマを発生させてもよい。The plasma generating means includes a processing electrode provided to face the workpiece, and a power supply for applying power to the processing electrode, and the processing electrode is applied from the power supply. The plasma may be generated in the second reaction gas atmosphere by electric power.

【００３６】前記加工用電極は、前記被加工物に対応す
る形状を有し、前記加工用電極には、前記反応ガスを前
記低コンダクタンスな流路へ供給する反応ガス供給口が
形成されてもよい。The processing electrode may have a shape corresponding to the workpiece, and the processing electrode may have a reaction gas supply port for supplying the reaction gas to the low conductance flow path. Good.

【００３７】前記被加工物は、被加工物固定手段に固定
され、前記被加工物固定手段は、被加工物固定用試料台
を含み、前記被加工物固定用試料台には、前記反応ガス
を前記低コンダクタンスな流路へ供給する反応ガス供給
口が形成され、前記被加工物固定用試料台は、前記被加
工物に対応する形状を有してもよい。The work piece is fixed to the work piece fixing means, and the work piece fixing means includes a work piece fixing sample table, and the work piece fixing sample table is provided with the reaction gas. And a reaction gas supply port for supplying the reaction gas to the low conductance flow path may be formed, and the workpiece holder for fixing the workpiece may have a shape corresponding to the workpiece.

【００３８】前記加工用電極は、前記被加工物に対して
微小間隔をおいて設置する事により前記低コンダクタン
スな流路を形成してもよい。[0038] The processing electrode may be provided at a small interval with respect to the workpiece to form the low conductance flow path.

【００３９】前記第１圧力と前記第２圧力との差圧は、
前記加工用電極を前記被加工物に対して、若しくは前記
被加工物を前記加工用電極に対して微小間隔をおいて浮
上させてもよい。The differential pressure between the first pressure and the second pressure is:
The processing electrode may be floated with respect to the workpiece, or the workpiece may be floated at a small interval with respect to the processing electrode.

【００４０】前記加工用電極と被加工物固定用試料台と
の少なくとも一方は更に、磁力を発生する磁力発生機構
を有し、前記磁力発生機構が発生する前記磁力は、前記
加工用電極を前記被加工物に対して、若しくは前記被加
工物を前記加工用電極に対して微小間隔をおいて浮上さ
せてもよい。At least one of the working electrode and the workpiece holder has a magnetic force generating mechanism for generating a magnetic force, and the magnetic force generated by the magnetic force generating means causes the working electrode to The workpiece or the workpiece may be floated at a small interval from the processing electrode.

【００４１】前記加工用電極は、前記電源から前記電力
が印加される電力伝送線路を有し、前記電力伝送線路
は、前記被加工物と対向する位置に設けられる電力伝送
線路開放端を有し、前記加工用電極に印加された前記電
力は、前記電力伝送線路開放端まで伝送され、前記電力
伝送線路開放端において高電界を発生させる事により前
記プラズマを発生させてもよい。The working electrode has a power transmission line to which the power is applied from the power source, and the power transmission line has a power transmission line open end provided at a position facing the workpiece. The power applied to the processing electrode may be transmitted to an open end of the power transmission line, and the plasma may be generated by generating a high electric field at the open end of the power transmission line.

【００４２】前記電力伝送線路は、前記電源から印加さ
れる前記電力を前記電力伝送線路開放端まで伝送する内
側導体と、アースに接続され前記内側導体を覆う電界遮
蔽導体と、前記内側導体と前記電界遮蔽導体とを絶縁す
る絶縁体とによって構成されてもよい。The power transmission line includes an inner conductor that transmits the power applied from the power source to the open end of the power transmission line, an electric field shielding conductor that is connected to ground and covers the inner conductor, And an insulator for insulating the electric field shielding conductor.

【００４３】前記加工用電極の前記電力伝送線路開放端
は、好ましくない加工量分布が形成されないように前記
反応ガス供給口から十分離れた位置に設けられてもよ
い。The open end of the power transmission line of the processing electrode may be provided at a position sufficiently distant from the reaction gas supply port so that an undesired processing amount distribution is not formed.

【００４４】前記電力伝送線路は、前記電力を前記電力
伝送線路開放端まで伝送する導波管を含んでもよい。[0044] The power transmission line may include a waveguide for transmitting the power to an open end of the power transmission line.

【００４５】前記精密加工装置は、前記被加工物の表面
全体が加工されるように、前記被加工物と前記加工用電
極とを相対移動させる移動手段をさらに含んでもよい。[0045] The precision processing apparatus may further include moving means for relatively moving the workpiece and the processing electrode so that the entire surface of the workpiece is processed.

【００４６】前記加工用電極と前記被加工物固定用試料
台との少なくともいずれか一方には更に、前記反応生成
物を排気する反応ガス排気口を有し、前記精密加工装置
は、前記反応ガス排気口からの前記反応生成物を前記精
密加工装置の外部に排気する排出処理機構をさらに備え
てもよい。At least one of the processing electrode and the workpiece holding sample stage further has a reaction gas exhaust port for exhausting the reaction product. The apparatus may further include a discharge processing mechanism that discharges the reaction product from an exhaust port to the outside of the precision processing device.

【００４７】前記排出処理機構は、前記反応生成物を処
理し、前記精密加工装置は、前記排出処理機構により処
理された前記反応生成物を反応ガスとして前記低コンダ
クタンスな流路へ再供給する循環機構をさらに備えても
よい。The discharge processing mechanism processes the reaction product, and the precision processing device recirculates the reaction product processed by the discharge processing mechanism as a reaction gas to the low conductance flow path. A mechanism may be further provided.

【００４８】前記被加工物の表面には、微小凸部が形成
され、前記被加工物表面形状に対して相似形状を含む形
状を持つ前記加工用電極を前記被加工物に対向させ、前
記加工用電極−被加工物間の高圧力部から、前記電極周
囲の前記第１の反応ガス雰囲気若しくは前記反応ガス排
気口へ向かう被加工物表面に沿う流れ中において局所的
なプラズマを発生させ、該プラズマによって生じた前記
反応ガスに基づく前記活性種が、前記被加工物表面に沿
う流れにより前記被加工物表面の微小凸部を選択的に除
去する事により前記表面を平滑化してもよい。A minute convex portion is formed on the surface of the workpiece, and the processing electrode having a shape similar to the surface shape of the workpiece is opposed to the workpiece. A local plasma is generated from a high pressure portion between the electrode and the workpiece in a flow along the workpiece surface toward the first reaction gas atmosphere or the reaction gas exhaust port around the electrode, The active species based on the reaction gas generated by plasma may smooth the surface by selectively removing minute projections on the surface of the workpiece by a flow along the surface of the workpiece.

【００４９】前記精密加工装置は、前記第１の反応ガス
雰囲気を維持する反応容器をさらに備えてもよい。[0049] The precision processing apparatus may further include a reaction vessel for maintaining the first reaction gas atmosphere.

【００５０】本発明のある局面に従えば、局所的に形成
した高圧反応ガス雰囲気中において、プラズマを発生さ
せることにより被加工物を高速に加工する事が出来、同
時に上記プラズマの発生する上記局所的に高圧力となっ
た部分以外の領域が、上記高圧反応ガス雰囲気より低圧
に維持される事により、被加工物周辺雰囲気における反
応生成物の凝縮が少なく、被加工物を清浄に保つ事が出
来る。According to one aspect of the present invention, a workpiece can be processed at a high speed by generating plasma in a locally formed high-pressure reaction gas atmosphere, and at the same time, the above-mentioned local area where the plasma is generated can be processed. By maintaining the region other than the region where the pressure became high at a lower pressure than that of the high-pressure reaction gas atmosphere, condensation of reaction products in the atmosphere around the workpiece is small, and the workpiece can be kept clean. I can do it.

【００５１】本発明の他の局面に従えば、上記被加工物
を配した第１の反応ガス雰囲気の圧力に対して、上記低
コンダクタンス流路部分に局所的に維持された第２の反
応ガス雰囲気中のプラズマの発生する部分の全ての圧力
が高く維持されている事により、プラズマ部において高
密度活性種を発生し高加工速度を達成し、同時にプラズ
マ部より周囲雰囲気の圧力が低い事から、被加工物周辺
雰囲気における反応生成物の凝縮を更に少なくし、被加
工物表面を清浄に保つ事ができる。According to another aspect of the present invention, the second reactant gas locally maintained in the low conductance flow path portion with respect to the pressure of the first reactant gas atmosphere in which the workpiece is provided. Since all pressures in the area where plasma is generated in the atmosphere are kept high, high-density active species are generated in the plasma part and high processing speed is achieved, and at the same time, the pressure of the surrounding atmosphere is lower than the plasma part. Further, the condensation of the reaction product in the atmosphere around the workpiece can be further reduced, and the surface of the workpiece can be kept clean.

【００５２】本発明のさらに他の局面に従えば、プラズ
マの発生する上記局所的に高圧力となった第２の反応ガ
ス雰囲気以外の領域を、圧力１気圧以下とする事によ
り、反応ガス漏洩時、反応容器内の反応ガスが大気に拡
散しにくく装置の安全性を高める事が出来る。According to still another aspect of the present invention, a region other than the locally high-pressure second reaction gas atmosphere in which plasma is generated is set at a pressure of 1 atm or less, so that the reaction gas leakage is prevented. At this time, the reaction gas in the reaction vessel hardly diffuses into the atmosphere, and the safety of the apparatus can be enhanced.

【００５３】本発明のさらに他の局面に従えば、プラズ
マの発生する上記局所的に高圧力となった第２の反応ガ
ス雰囲気以外の領域を、更に真空雰囲気とする事によ
り、被加工物周辺雰囲気における反応生成物の粒径、及
び数の絶対値を低くする事が出来、被加工物表面を更に
清浄に保事が出来、同時に被加工物を大気雰囲気に搬出
する時のパージの際、雰囲気が真空に保たれている為、
反応ガスをその都度排気する必要が無く、装置のスルー
プットを向上させる事が出来る。According to still another aspect of the present invention, the region other than the locally high-pressure second reaction gas atmosphere in which plasma is generated is further made to be a vacuum atmosphere, so that the area around the workpiece is formed. The particle size of the reaction product in the atmosphere and the absolute value of the number can be reduced, the surface of the workpiece can be kept more clean, and at the same time, when purging the workpiece to the atmosphere, Because the atmosphere is kept in a vacuum,
There is no need to exhaust the reaction gas each time, and the throughput of the apparatus can be improved.

【００５４】本発明のさらに他の局面に従えば、被加工
物に対応する形状を持ち、更に上記反応ガス供給口を少
なくともいずれか一方に持つ加工用電極と被加工物固定
用試料台において、上記加工用電極と被加工物とを微小
間隔をおいて設置する事により、上記加工用電極を、上
記供給口から上記第１の反応ガス雰囲気への気体流路の
低コンダクタンス部分を形成する上記壁面とし、高圧力
の反応ガス雰囲気を局所的に形成することが出来、更に
該加工用電極に電力を印加して、上記低コンダクタンス
により局所的に高圧反応ガス雰囲気となった上記加工用
電極−被加工物間の微小間隔にプラズマを発生させ、被
加工物を高速、且つ清浄に加工する事が出来る。According to still another aspect of the present invention, there is provided a processing electrode having a shape corresponding to a workpiece and having at least one of the above-mentioned reaction gas supply ports, and a workpiece holder for fixing a workpiece. By placing the processing electrode and the workpiece at a small interval, the processing electrode forms the low conductance portion of the gas flow path from the supply port to the first reaction gas atmosphere. As a wall surface, a high-pressure reaction gas atmosphere can be locally formed, and furthermore, power is applied to the processing electrode, and the high-pressure reaction gas atmosphere is locally formed by the low conductance. Plasma is generated at minute intervals between workpieces, and the workpiece can be processed at high speed and cleanly.

【００５５】本発明のさらに他の局面に従えば、上記供
給口より供給した高圧反応ガスの圧力によって局所的に
形成された高圧力の反応ガス雰囲気と、上記第１の反応
ガス雰囲気圧力との差圧により、上記加工用電極を上記
被加工物に対して、若しくは上記被加工物を上記加工用
電極に対して、微小間隔をおいて浮上させる事により、
プラズマの熱による電極及び被加工物の変形、プラズマ
を発生させる電界、腐食性ガスの存在下において、上記
低コンダクタンスな気体流路を安定して、広面積に形成
する事が出来る。According to still another aspect of the present invention, a high-pressure reaction gas atmosphere locally formed by the pressure of the high-pressure reaction gas supplied from the supply port and the first reaction gas atmosphere pressure are different from each other. By the differential pressure, by floating the processing electrode with respect to the workpiece, or the workpiece with respect to the processing electrode at a minute interval,
In the presence of the deformation of the electrode and the workpiece due to the heat of the plasma, the electric field that generates the plasma, and the presence of corrosive gas, the low conductance gas flow path can be formed stably and in a wide area.

【００５６】本発明のさらに他の局面に従えば、さらに
磁性体、若しくは磁力発生機構を加工電極、若しくは上
記被加工物固定用試料台の少なくとも何れか一方に持
ち、上記磁性体若しくは磁力発生機構により発生した磁
力により上記加工用電極を上記被加工物に対して、若し
くは上記被加工物を上記加工用電極に対して、微小間隔
をおいて浮上させる事により、上記低コンダクタンスな
気体流路を安定して、広面積に形成する事が出来、更に
上記反応ガス供給口から供給する反応ガスの圧力を低く
設定でき、電極重量でなく、目的とする加工特性によっ
て上記反応ガスの供給圧力を決定できる。According to still another aspect of the present invention, a magnetic material or a magnetic force generating mechanism is provided on at least one of the working electrode and the workpiece holder for fixing the workpiece, and the magnetic material or the magnetic force generating mechanism is provided. By floating the processing electrode with respect to the workpiece, or the workpiece with respect to the processing electrode at a small interval by the magnetic force generated by the above, the low conductance gas flow path is formed. It can be formed stably and in a wide area, and the pressure of the reaction gas supplied from the reaction gas supply port can be set low. The supply pressure of the reaction gas is determined not by the electrode weight but by the target processing characteristics. it can.

【００５７】本発明のさらに他の局面に従えば、更に上
記加工用電極内に電力伝達線路と、上記被加工物と対向
する部分に上記電力伝達線路の開放端を設ける事によ
り、上記電極に印加された電力を上記電力伝送線路開放
端に伝送させ、上記開放端の近傍のみに局所的にプラズ
マを発生させる事が出来、また電力伝送線路がプラズマ
によって終端化されている事により、被加工物を全面加
工するために上記電極と被加工物を相対的に移動させた
場合においても電力投入機構部分の等価回路が変化せ
ず、プラズマに対する影響が少なく、被加工物を高精度
に加工する事が出来る。According to still another aspect of the present invention, a power transmission line is further provided in the processing electrode, and an open end of the power transmission line is provided in a portion facing the workpiece, so that the electrode is formed on the electrode. The applied power is transmitted to the open end of the power transmission line, and plasma can be locally generated only in the vicinity of the open end. Further, since the power transmission line is terminated by the plasma, the workpiece can be processed. Even when the electrode and the workpiece are relatively moved to process the entire surface of the workpiece, the equivalent circuit of the power input mechanism does not change, the influence on the plasma is small, and the workpiece is processed with high precision. I can do things.

【００５８】本発明のさらに他の局面に従えば、局所プ
ラズマを発生させる電力伝送線路開放端を上記電極の被
加工物と対向する部分で、且つ上記反応ガス供給口より
離れた位置に設ける事により、高圧反応ガスが上記被加
工物表面に向かって噴出する上記供給口直下においてプ
ラズマが発生せず、上記供給口直下における加工量分布
の発生を防ぐ事が出来る。それにより被加工物の仕上げ
面精度を向上させる事が出来る。According to still another aspect of the present invention, an open end of a power transmission line for generating local plasma is provided at a portion of the electrode facing the workpiece and at a position away from the reaction gas supply port. Accordingly, plasma is not generated immediately below the supply port where the high-pressure reaction gas is ejected toward the surface of the workpiece, and the generation of the processing amount distribution immediately below the supply port can be prevented. As a result, the accuracy of the finished surface of the workpiece can be improved.

【００５９】本発明のさらに他の局面に従えば、上記プ
ラズマを発生させる電力をマイクロ波電力とする事によ
り、上記電極と被加工物の微小間隔に発生したプラズマ
中の荷電粒子を補足し、被加工物に与える損傷を更に低
減させる事が出来る。また同時に微小間隔に保たれた上
記電極−上記被加工物間にプラズマを発生させる事が出
来る。According to still another aspect of the present invention, the power for generating the plasma is microwave power, so that the charged particles in the plasma generated at a minute interval between the electrode and the workpiece are captured. Damage to the workpiece can be further reduced. At the same time, plasma can be generated between the electrode and the workpiece, which are kept at a minute interval.

【００６０】本発明のさらに他の局面に従えば、上記電
極内の上記電力伝送線路を導波管とする事により、上記
加工用電極の構成を簡略化でき、プラズマの熱による電
極の変形による電極自体の破損を防止する事により装置
の信頼性を向上させる事が出来ると共に、部品形状の簡
略化により装置コストを低減させる事が出来る。According to still another aspect of the present invention, the configuration of the working electrode can be simplified by using the power transmission line in the electrode as a waveguide, and the electrode is deformed by the heat of plasma. The reliability of the device can be improved by preventing the electrode itself from being damaged, and the cost of the device can be reduced by simplifying the component shape.

【００６１】本発明のさらに他の局面に従えば、上記プ
ラズマと上記被加工物を相対的に移動させる事により、
上記被加工物を所望の形状に加工する事が出来る。According to still another aspect of the present invention, by relatively moving the plasma and the workpiece,
The workpiece can be processed into a desired shape.

【００６２】本発明のさらに他の局面に従えば、上記電
極若しくは上記被加工物固定試料台に、プラズマの発生
する上記微小間隔に向かって開口する反応ガス排気口を
設け、上記排気口よりプラズマにおいて発生した反応生
成物を即座に排気する事によって、被加工物を更に清浄
に加工する事が出来る。According to still another aspect of the present invention, the electrode or the workpiece-fixed sample stage is provided with a reaction gas exhaust port that opens toward the minute gap where plasma is generated. By immediately exhausting the reaction product generated in the above, the workpiece can be processed more cleanly.

【００６３】本発明のさらに他の局面に従えば、上記被
加工物に対して、上記被加工物と対向する部分の形状に
少なくとも、被加工物表面に対して相似形状を合む形状
をもつ上記加工用電極を用いて、上記加工用電極−被加
工物間の微小間隔内の上記反応ガス供給口の高圧力部か
ら、上記電極周囲の第１の反応ガス雰囲気若しくは上記
反応ガス排気口へ向かう被加工物表面に沿う流れ中にお
いて、局所的なプラズマを発生させ、該プラズマによっ
て生じた上記反応ガスに基づく上記活性種が、上記被加
工物表面に沿う流れにより上記被加工物表面の微小凸部
を選択的に除去する事により、上記被加工物表面を局所
的に平滑化し、若しくは更に上記被加工物と上記加工用
電極を相対移動させる事により上記被加工物全体を形状
加工する事が出来る。According to still another aspect of the present invention, the workpiece has at least a shape similar to the surface of the workpiece with a shape of a portion facing the workpiece. Using the processing electrode, from a high pressure portion of the reaction gas supply port within a minute interval between the processing electrode and the workpiece, to a first reaction gas atmosphere or the reaction gas exhaust port around the electrode. In the flow along the surface of the workpiece, a local plasma is generated, and the active species based on the reaction gas generated by the plasma generates minute plasma on the surface of the workpiece by the flow along the surface of the workpiece. The surface of the workpiece is locally smoothed by selectively removing the protrusions, or the entire workpiece is shaped by relatively moving the workpiece and the processing electrode. Made .

【００６４】本発明のさらに他の局面に従えば、上記と
同様の効果を有する加工装置を提供する事が出来る。According to still another aspect of the present invention, a processing apparatus having the same effects as described above can be provided.

【００６５】[0065]

【発明の実施の形態】（低コンダクタンスによる差圧発
生理論）まず第一に、局所的に高圧気体を供給すると共
に、該供給部から上記被加工物周辺の気体雰囲気への低
コンダクタンスな気体流路が構成される様に上記被加工
物と対向する壁面を配置し、これによって上記被加工物
周辺の気体雰囲気よりも高圧力の気体雰囲気を上記低コ
ンダクタンス流路部分に局所的に維持する方式について
図２５Ａ及び図２５Ｂを用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS (Theory of Differential Pressure Generation by Low Conductance) First, a high-pressure gas is locally supplied, and a low-conductance gas flow from the supply section to a gas atmosphere around the workpiece is provided. A method of arranging a wall surface facing the workpiece so that a path is formed, thereby locally maintaining a gas atmosphere at a higher pressure than the gas atmosphere around the workpiece in the low conductance flow path portion. Will be described with reference to FIGS. 25A and 25B.

【００６６】図２５Ａは、円板Ｈ０による低コンダクタ
ンスな気体流路の形成を示す概略図である。図２５Ｂ
は、上記円板Ｈ０−被加工物Ｊ間に円筒座標軸を設定し
た図である。FIG. 25A is a schematic diagram showing the formation of a low conductance gas flow path by the disk H0. FIG. 25B
FIG. 3 is a diagram in which a cylindrical coordinate axis is set between the disk H0 and the workpiece J.

【００６７】図２５Ａ及び図２５Ｂを参照して、被加工
物Ｊの被加工面形状が平面である場合において、外半径
Ｒ２、内半径Ｒ１、厚さＴ１の平面形状を持つ円板Ｈ０
をギャップt０だけ離れて被加工物Ｊと対向させ、更に
高圧気体供給路１０１によって半径Ｒ１の内径穴を通じ
て、圧力ｐｓの高圧気体を局所的に供給し、高圧気体は
更に円板Ｈ０と被加工物Ｊとの間に形成された気体流路
を通じて圧力ｐ０の円板Ｈ０の周囲の気体雰囲気へ流れ
るものとする。Referring to FIG. 25A and FIG. 25B, when the surface of the workpiece J is a flat surface, a disk H0 having an outer radius R2, an inner radius R1, and a thickness T1 has a planar shape.
Is separated from the workpiece J by a gap t0, and a high-pressure gas having a pressure ps is locally supplied through an inner diameter hole having a radius R1 by the high-pressure gas supply path 101, and the high-pressure gas further processes the disk H0. It is assumed that the gas flows into the gas atmosphere around the disk H0 at the pressure p0 through the gas flow path formed between the disk J0 and the object J.

【００６８】ここで、円板Ｈ０と被加工物Ｊとの間を流
れる気体の重量流量ｗ、及び圧力分布ｐを図２５Ｂを用
いて求める。Here, the weight flow rate w and the pressure distribution p of the gas flowing between the disk H0 and the workpiece J are obtained with reference to FIG. 25B.

【００６９】図２５Ｂに示される様に、被加工平面及
び、円板Ｈ０に垂直で、且つ円板Ｈ０の中心を通る直線
をｚ軸とし、ｚ軸が被加工平面と交わる点を原点Ｏとす
る。更に図２５Ｂの様に、原点Ｏを通り、且つ被加工平
面上にある直線を円筒座標系のｒ軸、またそこから反時
計周りに回転角θ０（図示せず）をとるものとする。As shown in FIG. 25B, a plane to be processed and a straight line perpendicular to the disk H0 and passing through the center of the disk H0 are defined as the z axis, and a point at which the z axis intersects the plane to be processed is defined as an origin O. I do. Further, as shown in FIG. 25B, a straight line passing through the origin O and on the plane to be processed has an r-axis in the cylindrical coordinate system and a rotation angle θ0 (not shown) counterclockwise from the r-axis.

【００７０】まず第一に円板Ｈ０と被加工物Ｊとの間を
流れる気体の重量流量ｗを求める。気体の重量流量ｗ
は、粘性を考慮した気体の運動方程式であるＮａｖｉｅ
ｒ−Ｓｔｏｋｅｓ方程式によって規定される流速を用い
て求める事が出来、 Ｎａｖｉｅｒ−Ｓｔｏｋｅｓ方程
式を円筒座標系で示すと以下の式（１−１）のようにな
る。First, the weight flow rate w of the gas flowing between the disk H0 and the workpiece J is determined. Gas weight flow rate w
Is Navier, which is the equation of motion of gas considering viscosity.
It can be obtained by using the flow rate defined by the r-Stokes equation. When the Navier-Stokes equation is expressed in a cylindrical coordinate system, the following equation (1-1) is obtained.

【００７１】[0071]

【数１】 (Equation 1)

【００７２】ここで、円板Ｈ０と被加工物Ｊとの間を流
れる気体の重量流量ｗを求める時、以下の仮定を行な
う。 （１）円板Ｈ０と被加工物Ｊとの間の距離ｔ０は円板外
半径Ｒ２に比べて非常に小さい。 （２）円板Ｈ０と被加工物Ｊとの間の流れは、発達した
境界層流れである。 （３）ｚ軸方向に圧力分布はなく、従ってｚ軸方向の気
体の速度を無視する。 （４）θ方向にも圧力分布はなく、従ってθ方向の気体
の速度も無視する。 （５）圧力勾配の項に比べて、慣性力の項は小さい。 （６）主なる粘性力はδ2vｒ／δz2のみで他は無視す
る。Here, the following assumption is made when obtaining the weight flow rate w of the gas flowing between the disk H0 and the workpiece J. (1) The distance t0 between the disk H0 and the workpiece J is much smaller than the outer radius R2 of the disk. (2) The flow between the disc H0 and the workpiece J is a developed boundary layer flow. (3) There is no pressure distribution in the z-axis direction, and therefore ignores the velocity of the gas in the z-axis direction. (4) There is no pressure distribution in the θ direction, so the velocity of gas in the θ direction is also ignored. (5) The term of inertia force is smaller than the term of pressure gradient. (6) The main viscous force is only δ 2 vr / δz 2 and the others are ignored.

【００７３】以上の仮定を式（１−１）に当てはめる
と、以下のように簡略化される。When the above assumption is applied to equation (1-1), it is simplified as follows.

【００７４】[0074]

【数２】 (Equation 2)

【００７５】但し、ｐはｒ方向の圧力分布 vｒはｒ方向の流速分布 μは、気体の粘性係数 である。壁面においては、気体の速度は壁面の速度に等
しいとする事が出来、境界条件は、Here, p is the pressure distribution in the r direction vr is the flow velocity distribution in the r direction μ is the viscosity coefficient of the gas. On the wall, the velocity of the gas can be equal to the velocity of the wall, and the boundary condition is

【００７６】[0076]

【数３】 (Equation 3)

【００７７】圧力ｐはｚ方向に分布を持たないので、式
（１−２）を境界条件（１−３）について解くと、Since the pressure p has no distribution in the z direction, solving the equation (1-2) for the boundary condition (1-3) gives

【００７８】[0078]

【数４】 (Equation 4)

【００７９】従って、円板Ｈ０と被加工物Ｊとの間を流
れる気体の重量流量ｗは、Accordingly, the weight flow rate w of the gas flowing between the disk H0 and the workpiece J is:

【００８０】[0080]

【数５】 (Equation 5)

【００８１】但し、ρは気体の密度 である。気体の状態方程式より、Where ρ is the density of the gas. From the equation of state of the gas,

【００８２】[0082]

【数６】 (Equation 6)

【００８３】但し、ｍは気体の分子量 Ｒ０は気体定数 Ｔ０は絶対温度 である。式（１−６）を式（１−５）に代入すると、Where m is the molecular weight of the gas R0 is the gas constant T0 is the absolute temperature. By substituting equation (1-6) into equation (1-5),

【００８４】[0084]

【数７】 (Equation 7)

【００８５】ここで、ｗはｒによらず一定値をとらなけ
ればならない為、Here, since w must take a constant value regardless of r,

【００８６】[0086]

【数８】 (Equation 8)

【００８７】従って、Therefore,

【００８８】[0088]

【数９】 (Equation 9)

【００８９】但し、Ｅ０、Ｆ０は積分定数 である。境界条件を代入して、Here, E0 and F0 are integration constants. Substituting boundary conditions,

【００９０】[0090]

【数１０】 (Equation 10)

【００９１】従って、円板Ｈ０の下面に円板Ｈ０と被加
工物Ｊとの間の気体圧力によって働く力は、上記式（１
−９）を積分して、Accordingly, the force acting on the lower surface of the disk H0 by the gas pressure between the disk H0 and the workpiece J is given by the above equation (1).
-9)

【００９２】[0092]

【数１１】 [Equation 11]

【００９３】から求める事が出来る。また同時に、円板
Ｈ０の上面には、周囲雰囲気の圧力ｐ０が働く為、円板
Ｈ０には重力を除いて、Can be obtained from At the same time, since the pressure p0 of the surrounding atmosphere acts on the upper surface of the disc H0, the gravity is applied to the disc H0 except for gravity.

【００９４】[0094]

【数１２】 (Equation 12)

【００９５】なる力ｆがｚ軸の正方向に働く事となる。The force f acts in the positive direction of the z-axis.

【００９６】また、式（１−１０）より、From the equation (1-10),

【００９７】[0097]

【数１３】 (Equation 13)

【００９８】この時、式（１−１３）中のｗは流量、ｐ
ｓ−ｐ０は差圧である為、Ｃ０はコンダクタンスを表
し、以下の式（１−１４）で表される。At this time, w in the equation (1-13) is a flow rate, p
Since sp0 is a differential pressure, C0 represents conductance and is represented by the following equation (1-14).

【００９９】[0099]

【数１４】 [Equation 14]

【０１００】ここで、円板Ｈ０と被加工物Ｊとで構成さ
れる気体流路のコンダクタンスＣ０は、圧力ｐｓ及びｐ
０によって変化するが、幾何学的境界条件によって上記
コンダクタンスを設定する場合、ｔ０、Ｒ２、Ｒ１に依
存する事となる。Here, the conductance C0 of the gas flow path composed of the disk H0 and the workpiece J is determined by the pressures ps and p
Although it changes with 0, when the above-mentioned conductance is set by a geometric boundary condition, it depends on t0, R2, and R1.

【０１０１】ここで、プラズマを発生させる気体の圧力
を、例えば大気圧以上の高圧力にし、多くの気体分子を
プラズマ中に供給し、高い加工速度を達成する方式が、
従来技術に示したプラズマＣＶＭである。Here, a method of setting the pressure of a gas for generating plasma to a high pressure, for example, equal to or higher than the atmospheric pressure, supplying many gas molecules into the plasma, and achieving a high processing speed,
It is a plasma CVM shown in the prior art.

【０１０２】ここで、圧力ｐｓ１で気体を供給し、要求
される所定の気体の流量をｗ１とすると、その時の円板
Ｈ０の周囲圧力をｐ０１、その時の気体の物性及び円板
による境界条件Ｒ１，Ｒ２，ｔ０によって決定される定
数ｃの値をｃ＝ｃ１、コンダクタンスをＣ０＝Ｃ０１と
する。Here, assuming that the gas is supplied at the pressure ps1 and the required predetermined gas flow rate is w1, the surrounding pressure of the disk H0 at that time is p01, the physical properties of the gas at that time, and the boundary condition R1 by the disk. , R2, and t0, the value of the constant c is c = c1, and the conductance is C0 = C01.

【０１０３】ここで、プラズマを発生させる為に供給す
る気体の種類（分子量ｍ）、圧力（ｐｓ）、温度（Ｔ）
は被加工物Ｊ及び、目的とする加工現象によって決定さ
れる為、変更する事が出来ない。Here, the kind (molecular weight m), pressure (ps), and temperature (T) of the gas supplied to generate plasma
Cannot be changed because it is determined by the workpiece J and the intended processing phenomenon.

【０１０４】ここで変化させる事が出来るのは、円板周
囲の雰囲気圧力ｐ０、及び円板Ｈ０の配置、つまり境界
条件Ｒ１，Ｒ２，ｔ０である。 ｃ＝ｃ１が非常に大きくなるように、Ｒ１、Ｒ２、ｔ
０を設定する時、つまり供給部から円板周囲への気体流
路の幅ｔ０を広くし、Ｒ２／Ｒ１を大きくする事によっ
て高圧力供給部から周囲気体雰囲気への気体流路のコン
ダクタンスＣ０を高くした場合（Ｃ０＝Ｃ０１）には、
式（１−１２）より、 ｐｓ１＝ｐ０１ となり、高圧気体供給部圧力ｐｓと円板周囲圧力ｐ０が
ほとんど等しくなる。また式（１−９）より、 ｐ＝ｐｓ＝ｐ０（Ｒ１≦ｒ≦Ｒ２） となり、高圧力供給部から周囲気体雰囲気への気体流路
である円板Ｈ０と被加工物Ｊとの間に圧力分布は発生し
ない。 しかし、上記必要気体供給量ｗ１、供給気体圧力ｐｓ
１を保ったまま、上記コンダクタンスＣ０を低くＣ０＝
Ｃ０２とし（Ｃ０１＞Ｃ０２）、それに対応して周囲気
体圧力ｐ０を小さく設定する場合（ｐ０＝ｐ０２＜ｐ０
１）には、式（１−１２）より、気体流量ｗは、 ｗ＝ｗ１＝ｃ２（ｐｓ１2−ｐ０２2） を保つように、Ｃ０２及び、ｐ０２を設定し、且つ（供
給部圧力：ｐｓ１）＞（円板Ｈ０周囲の雰囲気圧力：ｐ
０２）である為、式（１−９）によって示される圧力分
布を円板Ｈ０と被加工物Ｊとの間、つまり低コンダクタ
ンス流路部分に形成する事になり、上記円板Ｈ０と被加
工物Ｊ間の気体圧力は円板周囲の圧力ｐ０＝ｐ０２より
全て高圧状態となっている。What can be changed here is the atmospheric pressure p0 around the disk and the arrangement of the disk H0, that is, the boundary conditions R1, R2, and t0. R1, R2, t so that c = c1 becomes very large.
When 0 is set, that is, by increasing the width t0 of the gas flow path from the supply section to the periphery of the disk and increasing R2 / R1, the conductance C0 of the gas flow path from the high pressure supply section to the surrounding gas atmosphere is reduced. If it is raised (C0 = C01),
From equation (1-12), ps1 = p01, and the pressure ps of the high-pressure gas supply unit and the pressure p0 around the disk are almost equal. From equation (1-9), p = ps = p0 (R1 ≦ r ≦ R2), and the distance between the disk H0 and the workpiece J, which is a gas flow path from the high pressure supply unit to the surrounding gas atmosphere, is obtained. No pressure distribution occurs. However, the required gas supply amount w1 and supply gas pressure ps
While keeping 1, the conductance C0 is lowered and C0 =
When C02 is set as (C01> C02), and the surrounding gas pressure p0 is set correspondingly small (p0 = p02 <p0)
The 1), the equation (1-12), the gas flow rate w is, w = w1 = c2 (ps1 2 -p02 2) to keep, C02 and sets the p02, and (supply section Pressure: ps1 )> (Ambient pressure around disk H0: p
02), the pressure distribution shown by the equation (1-9) is formed between the disk H0 and the workpiece J, that is, in the low conductance flow path portion, and the disk H0 and the workpiece are processed. The gas pressure between the objects J is higher than the pressure p0 = p02 around the disk.

【０１０５】つまり、同じ圧力ｐｓ１によって気体を供
給し、ある同じ気体の供給量ｗ１を実現する方法には、 上記供給部から周囲雰囲気への気体流路のコンダクタ
ンスが大きくなる様に上記円板Ｈ０の壁面を設定し、供
給圧力ｐｓと周囲圧力ｐ０とが等しい状態で流す場合
と、 上記コンダクタンスが低くなる様に上記円板Ｈ０の壁
面を設定し、供給圧力ｐｓと周囲圧力ｐ０との差圧が大
きい状態で流す場合とが存在するのである。That is, the method of supplying gas at the same pressure ps1 and realizing the same supply amount w1 of the gas includes the above-mentioned disk H0 so as to increase the conductance of the gas flow path from the supply section to the surrounding atmosphere. When the supply pressure ps and the ambient pressure p0 are set to flow in the same state, the wall surface of the disk H0 is set so that the conductance is reduced, and the differential pressure between the supply pressure ps and the ambient pressure p0 is set. There is a case in which the flow is performed in a state where is large.

【０１０６】ここで更に、円板Ｈ０と被加工物Ｊとの間
にプラズマを発生させ、高加工速度を達成する為に供給
圧力ｐｓを大きくし、高圧力気体を供給する時を考え
る。Now, consider a case where plasma is generated between the disk H0 and the workpiece J, the supply pressure ps is increased to achieve a high processing speed, and a high-pressure gas is supplied.

【０１０７】前述したように、の場合においてもの
場合においても、円板Ｈ０と被加工物Ｊとの間には同じ
気体流量ｗ＝ｗ１が流れ、との加工速度は変わらな
い。As described above, even in the above case, the same gas flow rate w = w1 flows between the disk H0 and the workpiece J, and the processing speed does not change.

【０１０８】しかし、上記の場合には、供給部の圧力
ｐｓ、プラズマを発生させる上記円板Ｈ０−被加工物Ｊ
間、更に周囲圧力ｐ０に圧力分布はなく、全て同じ圧力
である。ここで、プラズマが発生する部分においては、
高圧力即ち平均自由工程の短さにより、容易に衝突、凝
縮し、反応生成物を形成する。プラズマ中においては、
反応生成物は即座に再分解し、被加工物表面を汚染する
事はない。In the above case, however, the pressure ps of the supply unit, the disk H0 for generating plasma, and the workpiece J
During this time, there is no pressure distribution in the ambient pressure p0, and the pressures are all the same. Here, in the part where plasma is generated,
Due to the high pressures, i.e. the short mean free path, they easily collide and condense to form reaction products. In the plasma,
The reaction products are immediately redissolved and do not contaminate the workpiece surface.

【０１０９】しかし周囲の気体雰囲気においては、反応
生成物は被加工物表面に付着し、加工特性を劣化させ、
その周囲の気体雰囲気の圧力がプラズマが発生する部分
と同等の高圧力である為、その平均自由工程の短さか
ら、非常に頻繁に衝突、凝縮を繰り返し、粒径の大きい
反応生成物が形成、付着する事になる。従って加工特性
を著しく劣化させ、高加工速度を達成する変わりに被加
工物表面を汚染しやすくなる。However, in the surrounding gas atmosphere, the reaction product adheres to the surface of the workpiece and deteriorates the processing characteristics.
Since the pressure of the surrounding gas atmosphere is as high as that of the part where plasma is generated, collision and condensation are repeated very frequently due to the short mean free path, and a reaction product with a large particle size is formed. Will adhere. Therefore, the processing characteristics are remarkably deteriorated, and the surface of the workpiece is easily contaminated instead of achieving a high processing speed.

【０１１０】ここで上記反応生成物の発生を抑制する
為、周囲気体の雰囲気圧力ｐ０＝ｐ０１を低くすると、
供給部の圧力ｐｓ、プラズマを発生させる上記円板Ｈ０
−被加工物Ｊ間、更に周囲圧力ｐ０は等しい状態である
為、プラズマ部の圧力も減少し、清浄表面を得る事が出
来るが、高加工速度を達成できない。Here, in order to suppress the generation of the above reaction products, when the ambient pressure p0 = p01 of the surrounding gas is reduced,
The pressure ps of the supply unit, the disk H0 for generating plasma
-Since the ambient pressure p0 is equal between the workpieces J and the ambient pressure p0 is equal, the pressure of the plasma part also decreases, and a clean surface can be obtained, but a high processing speed cannot be achieved.

【０１１１】つまり、の状態においては、高加工速度
及び清浄表面を同時に実現する事が出来ないのである。In other words, in the condition (1), a high processing speed and a clean surface cannot be realized at the same time.

【０１１２】しかし上記の場合、高加工速度を達成す
る為の同じ気体供給量ｗ１を実現すると同時に、その気
体流路のコンダクタンスＣ０の低さから、供給部の圧力
ｐｓに対してｐｓ＞ｐ０２なる周囲雰囲気圧力ｐ０２を
維持する。In the above case, however, the same gas supply amount w1 for achieving a high processing speed is realized, and at the same time, ps> p02 with respect to the supply unit pressure ps due to the low conductance C0 of the gas flow path. The ambient atmosphere pressure p02 is maintained.

【０１１３】ここでプラズマ中において発生した反応生
成物は、と同様に即座に再分解され被加工物表面を汚
染しない。の場合は更に、周囲気体雰囲気において
も、上記プラズマを発生させる上記円板Ｈ０と被加工物
Ｊ間の圧力より低圧力である為、より低圧力による平均
自由工程の長さから反応生成物が比較的衝突、凝縮せ
ず、清浄な加工を行う事が出来るのである。Here, the reaction product generated in the plasma is immediately re-decomposed similarly to the above and does not contaminate the surface of the workpiece. In the case of, further, even in the surrounding gas atmosphere, since the pressure is lower than the pressure between the disk H0 for generating the plasma and the workpiece J, the reaction product is generated from the length of the mean free path due to the lower pressure. Clean processing can be performed relatively without collision and condensation.

【０１１４】つまり、プラズマ部における高圧力から高
加工速度を達成し、同時に周囲雰囲気がプラズマ部より
低圧力である事から、清浄な被加工物表面を得る事が出
来るのである。That is, a high processing speed is achieved from the high pressure in the plasma part, and at the same time, since the surrounding atmosphere is at a lower pressure than the plasma part, a clean workpiece surface can be obtained.

【０１１５】上記周囲圧力ｐ０は小さければ小さいほど
清浄な加工を行うことが出来る。その最小値はｐ０＝０
つまり周囲が真空状態の時である。The smaller the ambient pressure p0 is, the more clean processing can be performed. The minimum value is p0 = 0
That is, the surroundings are in a vacuum state.

【０１１６】、各々の場合において、供給圧力ｐ
ｓ、周囲雰囲気ｐ０、重量流量ｗ、コンダクタンスＣ
０、定数ｃの状態を示すと表１のようになる。In each case, the supply pressure p
s, ambient atmosphere p0, weight flow rate w, conductance C
Table 1 shows the states of 0 and the constant c.

【０１１７】[0117]

【表１】 [Table 1]

【０１１８】今回、高圧気体供給部から円板Ｈ０の周囲
の雰囲気への気体流路を、内半径Ｒ１、外半径Ｒ２の上
記円板Ｈ０と間隔ｔ０だけ離れて対向させた上記被加工
物Ｊによって形成し、そのコンダクタンスにおいても粘
性気体の運動方程式であるＮａｖｉｅｒ−Ｓｔｏｋｅｓ
方程式（式１−１）を用いて求めた。In this case, the workpiece J having the gas flow path from the high-pressure gas supply section to the atmosphere around the disc H0 is opposed to the disc H0 having the inner radius R1 and the outer radius R2 by a distance t0. Navier-Stokes, which is the equation of motion of a viscous gas in its conductance.
It was determined using the equation (Equation 1-1).

【０１１９】ここで、上記高圧力気体供給部に対して周
囲雰囲気の差圧を設ける方法は、上記高圧力気体供給部
から上記周囲雰囲気への気体流路のコンダクタンスを低
くする方法であり、上記円板Ｈ０−被加工物Ｊ間の間隔
ｔ０を小さくし、Ｒ２／Ｒ１を大きくする方法に限定し
ない。Here, the method of providing a differential pressure of the ambient atmosphere to the high-pressure gas supply section is a method of reducing the conductance of the gas flow path from the high-pressure gas supply section to the ambient atmosphere. The method is not limited to the method of reducing the interval t0 between the disc H0 and the workpiece J and increasing R2 / R1.

【０１２０】また流れる気体の圧力が低い場合、上記コ
ンダクタンスＣ０の求め方は、上記Ｎａｖｉｅｒ−Ｓｔ
ｏｋｅｓ方程式による方式でなく気体分子運動論を用い
て求めなければならないが、求め方に関わらず、高圧気
体供給部から周囲の雰囲気への気体流路を低いコンダク
タンスに設定する事によって上記の場合に示した高加
工速度且つ清浄表面を得る事が出来るのである。When the pressure of the flowing gas is low, the method of obtaining the conductance C0 is determined by the method of Navier-St.
Although it must be obtained using gas molecule kinetics instead of the method based on the Okes equation, regardless of how it is obtained, by setting the gas flow path from the high-pressure gas supply unit to the surrounding atmosphere to a low conductance, the above case is solved. The shown high processing speed and clean surface can be obtained.

【０１２１】次に添付図面１から図２１に基づき高能率
で、清浄に被加工物加工表面を平滑化、平坦化を行うプ
ラズマによる超精密加工方法及びその装置について更に
詳しく説明する。Next, an ultra-precision processing method using plasma for smoothing and flattening a processed surface of a workpiece with high efficiency and cleanliness and an apparatus therefor will be described in more detail with reference to the accompanying drawings 1 to 21.

【０１２２】（実施の形態１）本発明の実施の形態１に
ついて図１から図１２に基づいて詳細に述べる。(Embodiment 1) Embodiment 1 of the present invention will be described in detail with reference to FIGS.

【０１２３】図１は、実施の形態１に係る超精密加工装
置１００の全体概念図である。超精密加工装置１００
は、電極浮上型高圧浮上電極Ｈ１、被加工物Ｊ、被加工
物固定用試料台Ｔ、試料台走査ステージＳ、反応容器
Ｃ、電源Ｇ、共振・整合装置Ｍ、フレキシブル電力伝送
線路Ｉ、電力伝送線路Ｋ、高圧反応ガス供給装置Ｒ、排
気装置Ｅ、高圧浮上電極走査装置Ｕ、そしてそれらを制
御する制御装置Ｎを備える。FIG. 1 is an overall conceptual diagram of an ultra-precision processing apparatus 100 according to the first embodiment. Ultra-precision processing device 100
Are electrode floating type high-voltage floating electrode H1, workpiece J, workpiece holding sample stage T, sample stage scanning stage S, reaction vessel C, power supply G, resonance / matching device M, flexible power transmission line I, power A transmission line K, a high-pressure reaction gas supply device R, an exhaust device E, a high-pressure floating electrode scanning device U, and a control device N for controlling them are provided.

【０１２４】尚、超精密加工装置１００は、被加工物−
電極間ギャップを測定する図示しない被加工物−電極間
ギャップ測定装置をさらに備える。電極浮上型高圧浮上
電極Ｈ１及び被加工物固定用試料台Ｔは、それぞれの温
度を調整する為の図示しない水冷機構若しくは図示しな
い加熱機構を備える。また被加工物固定用試料台Ｔは、
図示しない被加工物固定部Ｆを更に備える。Incidentally, the ultra-precision processing apparatus 100 is designed to
The apparatus further includes a workpiece-electrode gap measuring device (not shown) for measuring an electrode gap. The electrode levitation type high-pressure levitation electrode H1 and the workpiece holder T are provided with a water cooling mechanism (not shown) or a heating mechanism (not shown) for adjusting their temperatures. In addition, the sample stage T for fixing the workpiece is
A workpiece fixing portion F (not shown) is further provided.

【０１２５】図２は、電極浮上型高圧浮上電極Ｈ１の断
面図である。１は、高圧反応ガスを高圧反応ガス供給装
置Ｒから電極浮上型高圧浮上電極Ｈ１へ輸送する高圧反
応ガス供給経路である。２は、電極浮上型高圧浮上電極
Ｈ１の被加工物Ｊに対向する位置に設けられ、高圧反応
ガス供給装置Ｒから輸送された高圧反応ガスを噴出する
高圧力反応ガス供給口である。FIG. 2 is a sectional view of the electrode floating type high-voltage floating electrode H1. Reference numeral 1 denotes a high-pressure reaction gas supply path for transporting the high-pressure reaction gas from the high-pressure reaction gas supply device R to the electrode floating type high-pressure floating electrode H1. Reference numeral 2 denotes a high-pressure reactant gas supply port provided at a position facing the workpiece J of the electrode levitation type high-pressure float electrode H1 and ejecting the high-pressure reactant gas transported from the high-pressure reactant gas supply device R.

【０１２６】１Ｂは、高圧反応ガス供給口２から供給す
る反応ガスの圧力を高圧力反応ガス供給口２によって分
布が発生しない様にするバッファ部であり、図中のバッ
ファ部１Ｂはお互いにつながっている。Reference numeral 1B denotes a buffer section for preventing the pressure of the reaction gas supplied from the high-pressure reaction gas supply port 2 from being distributed by the high-pressure reaction gas supply port 2, and the buffer sections 1B in the figure are connected to each other. ing.

【０１２７】３は反応ガス排気口４と排気装置Ｅとをつ
なぐ反応生成物排気経路であり、また４は、排気装置Ｅ
につながり局所領域プラズマＰ中での反応によって発生
した反応生成物を排気する反応ガス排気口である。Reference numeral 3 denotes a reaction product exhaust path connecting the reaction gas exhaust port 4 to the exhaust device E, and reference numeral 4 denotes an exhaust device E.
And a reaction gas exhaust port for exhausting a reaction product generated by a reaction in the local region plasma P.

【０１２８】５は、電極浮上型高圧浮上電極Ｈ１の内側
電極である。６は、電極浮上型高圧浮上電極Ｈ１の外側
電極である。１１は内側電極５及び外側電極６の間を絶
縁する絶縁体である。７は内側電極５及び外側電極６と
絶縁体１１とによって形成される電力伝送線路開放端で
ある。８は電極浮上型高圧浮上電極Ｈ１とフレキシブル
電力伝送線路Ｉとを接続するコネクタである。Reference numeral 5 denotes an inner electrode of the electrode floating type high-voltage floating electrode H1. Reference numeral 6 denotes an outer electrode of the electrode floating type high-voltage floating electrode H1. Reference numeral 11 denotes an insulator that insulates between the inner electrode 5 and the outer electrode 6. Reference numeral 7 denotes an open end of the power transmission line formed by the inner electrode 5 and the outer electrode 6 and the insulator 11. Reference numeral 8 denotes a connector for connecting the electrode floating type high-voltage floating electrode H1 and the flexible power transmission line I.

【０１２９】９は、電極浮上型高圧浮上電極Ｈ１と駆動
モーター１０（図１）とを接続する走査ワイヤー若しく
はベルトであり、これを通じて駆動モーター１０を回転
させる事によって電極浮上型高圧浮上電極Ｈ１を被加工
物Ｊに対して相対的に移動させる。走査ワイヤー若しく
はベルト９及び駆動モーター１０をまとめて高圧浮上電
極走査装置Ｕと呼ぶ（図１）。Reference numeral 9 denotes a scanning wire or a belt connecting the electrode levitation type high voltage levitation electrode H1 and the drive motor 10 (FIG. 1). The workpiece is moved relatively to the workpiece J. The scanning wire or belt 9 and the driving motor 10 are collectively referred to as a high-voltage floating electrode scanning device U (FIG. 1).

【０１３０】図３は、電極浮上型高圧浮上電極Ｈ１の被
加工物対向部分を表した下方斜面図である。電極浮上型
高圧浮上電極Ｈ１の電極形状を、反応生成物排気口４を
中心に持つ円盤型形状とし、高圧反応ガス供給口２の形
状を図３中に示される微小孔とし、微小孔を同一円周上
に多数個配置し、局所領域プラズマＰを発生させる電力
伝送線路開放端７の形状を反応生成物排気口４を中心に
持つ円周形状とし、電力伝送線路開放端７の位置を高圧
反応ガス供給口２より反応ガス排出口４側に十分離れて
設けてなる事を示す。FIG. 3 is a lower oblique view showing a portion of the electrode floating type high-voltage floating electrode H1 facing the workpiece. The electrode shape of the electrode floating type high-pressure floating electrode H1 is a disk shape having the reaction product exhaust port 4 as the center, and the shape of the high-pressure reaction gas supply port 2 is the minute hole shown in FIG. A plurality of power transmission line open ends 7 for generating local area plasma P are arranged on the circumference, and the shape of the power transmission line open end 7 is a circular shape having the reaction product exhaust port 4 as a center. This shows that the filter is provided sufficiently away from the reaction gas supply port 2 to the reaction gas discharge port 4 side.

【０１３１】図４は、被加工物Ｊと被加工物固定用試料
台Ｔとの段差ｔを示す部分断面図である。実施の形態１
においては、反応容器Ｃ内に被加工物Ｊ及び電極浮上型
高圧浮上電極Ｈ１を対向させて配し、高圧反応ガス供給
装置Ｒから目的とする加工特性より決定された高圧力反
応ガスを高圧反応ガス供給経路１を通じて電極浮上型高
圧浮上電極Ｈ１に供給し、高圧浮上電極Ｈ１は高圧浮上
電極Ｈ１と被加工物Ｊが対向する部分に高圧反応ガスを
高圧反応ガス供給口２より供給する事によって高圧浮上
電極Ｈ１を被加工物Ｊに対して微小間隔Ｄだけ浮上させ
る。FIG. 4 is a partial sectional view showing a step t between the work J and the worktable T for fixing the work. Embodiment 1
, A workpiece J and an electrode-floating high-pressure floating electrode H1 are arranged in a reaction vessel C so as to face each other, and a high-pressure reaction gas determined from a desired processing characteristic is supplied from a high-pressure reaction gas supply device R to a high-pressure reaction. An electrode levitation type high pressure levitation electrode H1 is supplied through a gas supply path 1. The high pressure levitation electrode H1 supplies a high pressure reaction gas from a high pressure reaction gas supply port 2 to a portion where the high pressure levitation electrode H1 and the workpiece J face each other. The high-voltage floating electrode H1 is floated with respect to the workpiece J by a minute interval D.

【０１３２】これにより前述した「低コンダクタンスに
よる差圧発生理論」におけるの場合において説明した
ように、高圧浮上電極Ｈ１の被加工物Ｊと対向する部分
を、高圧反応ガス供給口２から反応容器Ｃ内の気体雰囲
気へ向かう気体流路を低コンダクタンスな気体流路にす
る壁面とする。低コンダクタンスにより、排気装置Ｅに
より排気される反応容器Ｃ内の気体圧力より高圧力の反
応ガス雰囲気を、高圧浮上電極Ｈ１と被加工物Ｊ間の微
小間隔Ｄによる低コンダクタンス部分に局所的に形成す
る。Thus, as described in the case of the above-mentioned "Theory of Differential Pressure Generation by Low Conductance", the portion of the high-pressure floating electrode H1 facing the workpiece J is moved from the high-pressure reaction gas supply port 2 to the reaction vessel C. The gas flow path leading to the gas atmosphere in the interior is a wall having a low conductance gas flow path. Due to the low conductance, a reaction gas atmosphere having a higher pressure than the gas pressure in the reaction vessel C exhausted by the exhaust device E is locally formed in a low conductance portion due to the minute interval D between the high-pressure floating electrode H1 and the workpiece J. I do.

【０１３３】図２および図１を参照して、電源Ｇから発
生した電力は、電力伝送線路Ｋ、昇圧・整合装置Ｍ、フ
レキシブル電力伝送線路Ｉを通じて高圧浮上電極Ｈ１に
伝達され、更に内側電極５及び外側電極６及び絶縁体１
１によって構成される電極内電力伝送線路を通じて、高
圧浮上電極Ｈ１の被加工物Ｊと対向する部分であって、
且つ高圧反応ガス供給口２より離れた位置に設けられた
電力伝送線路開放端７に伝達され、高電界を発生させ、
電力伝送線路開放端７の位置、即ち高圧浮上電極Ｈ１と
被加工物Ｊとの間の微小間隔Ｄ中の高圧力反応ガス雰囲
気中であって、且つ高圧反応ガス供給口２より離れた部
分に局所領域高圧プラズマＰを発生させ、局所領域高圧
プラズマＰ中で上記高圧反応ガスを分解、活性化し、生
じた活性種と被加工物Ｊとを化学反応させ、生じた化合
物を気化させる事により、被加工物Ｊの局所領域高圧プ
ラズマＰ直下の加工を行う。Referring to FIGS. 2 and 1, power generated from power supply G is transmitted to high-voltage floating electrode H1 through power transmission line K, boosting / matching device M, and flexible power transmission line I, and further to inner electrode 5 And outer electrode 6 and insulator 1
A portion facing the workpiece J of the high-voltage floating electrode H1 through the intra-electrode power transmission line constituted by 1;
And it is transmitted to the power transmission line open end 7 provided at a position distant from the high pressure reaction gas supply port 2 to generate a high electric field,
At the position of the power transmission line open end 7, that is, in the high-pressure reaction gas atmosphere in the minute interval D between the high-pressure floating electrode H1 and the workpiece J, and at a portion away from the high-pressure reaction gas supply port 2. By generating the local region high-pressure plasma P, decomposing and activating the high-pressure reaction gas in the local region high-pressure plasma P, chemically reacting the generated active species with the workpiece J, and vaporizing the generated compound, Processing of the workpiece J immediately below the high-pressure plasma P in the local region is performed.

【０１３４】上記化学反応によって生じた反応生成物
は、反応生成物排気口４から反応生成物排気経路３を通
じて排気装置Ｅによって即座に排気される。また、反応
容器Ｃ内の気体雰囲気へ流れた反応生成物においては、
反応容器Ｃ全体を同様に排気装置Ｅによって排気する事
により反応生成物の除去を行っている。The reaction product generated by the chemical reaction is immediately exhausted from the reaction product exhaust port 4 through the reaction product exhaust path 3 by the exhaust device E. Further, in the reaction product flowing into the gas atmosphere in the reaction vessel C,
The reaction product is removed by exhausting the entire reaction vessel C by the exhaust device E in the same manner.

【０１３５】また、高圧浮上電極走査装置Ｕ及び走査ス
テージＳを用いて高圧浮上電極Ｈ１と被加工物Ｊとの相
対的位置を変化させる事によって、被加工物Ｊの全体加
工を行う事が出来るのである。そして制御装置Ｎによっ
て、所望の加工を行うのである。By changing the relative position between the high-voltage floating electrode H1 and the workpiece J using the high-voltage floating electrode scanning device U and the scanning stage S, the entire workpiece J can be processed. It is. Then, the desired processing is performed by the control device N.

【０１３６】以上のように実施の形態１によれば、高圧
浮上電極Ｈ１と被加工物Ｊとの間の微小間隔Ｄ中の高圧
力雰囲気に局所領域高圧プラズマＰを発生させるため、
高密度な活性種を生成することができる。その結果、高
い加工速度を実現できる。また同時に、局所領域高圧プ
ラズマＰが発生し、加工が行われている高圧浮上電極Ｈ
１と被加工物Ｊとの間の高圧力雰囲気の圧力よりも反応
容器Ｃ内の圧力が低圧に若しくは真空に維持されている
事から、被加工物Ｊを清浄に加工することができる。As described above, according to the first embodiment, the local region high-pressure plasma P is generated in the high-pressure atmosphere in the minute interval D between the high-pressure floating electrode H1 and the workpiece J.
A high-density active species can be generated. As a result, a high processing speed can be realized. At the same time, a local region high-pressure plasma P is generated and the high-pressure floating electrode H being processed is
Since the pressure in the reaction vessel C is maintained at a lower pressure or in a vacuum than the pressure of the high-pressure atmosphere between 1 and the workpiece J, the workpiece J can be processed cleanly.

【０１３７】反応容器Ｃ内の圧力が低ければ低いほど被
加工物を清浄に加工する事が出来るので、反応容器Ｃ内
の雰囲気が真空雰囲気である場合に最大の効果を得るこ
とができる。The lower the pressure in the reaction vessel C, the more cleanly the workpiece can be processed. Therefore, the maximum effect can be obtained when the atmosphere in the reaction vessel C is a vacuum atmosphere.

【０１３８】また、反応容器Ｃ内の圧力が１気圧以下で
ある場合においては、反応容器Ｃ外の大気よりも反応容
器Ｃ内の圧力が低い為、ガス漏洩時においても反応容器
Ｃ内のガス雰囲気が反応容器Ｃ外に漏洩しないので、超
精密加工装置の安全性を高める事が出来るという効果を
併せ持つ。When the pressure in the reaction vessel C is 1 atm or less, the pressure in the reaction vessel C is lower than that in the atmosphere outside the reaction vessel C. Since the atmosphere does not leak out of the reaction vessel C, the safety of the ultra-precision processing device can be enhanced.

【０１３９】さらに、反応容器Ｃ内の雰囲気が真空雰囲
気である場合においては、被加工物Ｊを反応容器Ｃ外に
搬出する際の反応ガスパージの際、反応ガスを排気する
時間を非常に短く、又はなくす事ができるので、超精密
加工装置のスループットを向上させることが出来る。Further, when the atmosphere in the reaction vessel C is a vacuum atmosphere, the time during which the reaction gas is exhausted during the reaction gas purge when the workpiece J is carried out of the reaction vessel C is extremely short. Alternatively, the throughput of the ultra-precision processing device can be improved.

【０１４０】また実施の形態１によれば、微小間隔Ｄ中
には高圧反応ガス供給口２から反応容器Ｃ内雰囲気へ向
かう反応ガスの被工物表面に沿った流れ、若しくは反応
生成排気口４へ向かう反応ガスの被工物表面に沿った流
れが形成されるので、被加工物表面に沿った流れが形成
される微小間隔Ｄ中に局所領域高圧プラズマＰを発生さ
せる事により、被加工物表面の微小凹凸を平滑化、平坦
化することができる。According to the first embodiment, during the minute interval D, the flow of the reaction gas from the high-pressure reaction gas supply port 2 toward the atmosphere in the reaction vessel C along the surface of the workpiece, or the reaction generation exhaust port 4 The flow of the reaction gas toward the workpiece is formed along the surface of the workpiece, and the local area high-pressure plasma P is generated during the minute interval D where the flow along the workpiece surface is formed. Fine irregularities on the surface can be smoothed and flattened.

【０１４１】さらに実施の形態１によれば、高圧反応ガ
ス供給口２の直下ではなく高圧反応ガス供給口２から離
れた部分に局所領域高圧プラズマＰを発生させるので、
高圧反応ガス供給口２の反応ガス噴出流によって、高圧
反応ガス供給口２の周辺の加工量よりも高圧反応ガス供
給口２直下の加工量が多くなる加工量分布を形成する事
なく、上記平滑化、平坦化を行うことが出来る。Further, according to the first embodiment, the local region high-pressure plasma P is generated not at the position immediately below the high-pressure reaction gas supply port 2 but at a portion away from the high-pressure reaction gas supply port 2.
Due to the flow of the reactant gas from the high-pressure reactant gas supply port 2, the above-mentioned smoothing is achieved without forming a machining amount distribution in which the amount of treatment immediately below the high-pressure reactant gas supply port 2 becomes larger than the amount of machining near the high-pressure reactant gas supply port 2. And flattening can be performed.

【０１４２】実施の形態１においては、電極浮上型高圧
浮上電極Ｈ１を被加工物Ｊに対して微小間隔Ｄだけ浮上
させる事によって上記低コンダクタンスな気体流路を実
現する例を説明したが、本発明はこれに限定されない。
電極浮上型高圧浮上電極Ｈ１を、被加工物Ｊに対して微
小間隔Ｄだけ離れて設置させる事によっても同様の効果
を得ることが出来る。In the first embodiment, an example in which the above-described low conductance gas flow path is realized by floating the electrode floating type high-voltage floating electrode H1 at a minute interval D with respect to the workpiece J has been described. The invention is not limited to this.
The same effect can be obtained by disposing the electrode floating type high-voltage floating electrode H1 at a small distance D from the workpiece J.

【０１４３】更に以下に 加工用電極Ｈ１を被加工物Ｊに対して微小間隔浮上さ
せる方式及びその効果。 電力伝送線路開放端によってプラズマを発生させる方
式及びその効果。 清浄な加工表面を得る方式。 微小凹凸を平坦化する方法及び原理。 ガス供給口直下における加工量分布形成の防止方式。 について詳述する。Further, a method of floating the processing electrode H1 with respect to the workpiece J at a minute interval and its effect will be described below. A method of generating plasma by an open end of a power transmission line and its effect. A method to obtain a clean processing surface. Method and principle for flattening micro unevenness. A method for preventing the formation of the processing amount distribution just below the gas supply port. Will be described in detail.

【０１４４】（微小間隔浮上させる方式及びその効
果）まず第一に電極浮上型高圧浮上電極Ｈ１を被加工物
Ｊに対して微小間隔浮上させる方式について図１から図
５を用いて説明する。(Method of Levitation at Fine Intervals and Its Effect) First, a method of floating the electrode floating type high-voltage floating electrode H1 with respect to the workpiece J at minute intervals will be described with reference to FIGS.

【０１４５】図５は電極浮上型高圧浮上電極Ｈ１と被加
工物Ｊとの間の微小間隔Ｄ中の高圧反応ガスの圧力分布
を示す模式図である。上記圧力分布は、図２５Ａに示さ
れるような簡単な場合においては、代数的に規定するこ
とが出来、同時に気体圧力より受ける力を上記式（１−
１１−２）により計算できるが、電極浮上型高圧浮上電
極Ｈ１のように高圧反応ガス供給口２を多数持つ場合
は、代数的に求める事は出来ず、有限要素法等の方法を
用いて数値解析を行なう事になり、同様に同時に気体圧
力より電極浮上型高圧浮上電極Ｈ１が受ける力も数値解
析的に求める事になる。FIG. 5 is a schematic diagram showing the pressure distribution of the high-pressure reactant gas in the minute interval D between the electrode floating type high-pressure floating electrode H1 and the workpiece J. In the simple case shown in FIG. 25A, the pressure distribution can be defined algebraically, and at the same time, the force received from the gas pressure is calculated by the above equation (1-
Although it can be calculated by 11-2), when there are many high-pressure reactant gas supply ports 2 like the electrode floating type high-pressure floating electrode H1, it cannot be obtained algebraically, and the numerical value is calculated using a method such as the finite element method. Analysis is performed, and at the same time, the force applied to the electrode floating type high-voltage floating electrode H1 from the gas pressure is also determined numerically.

【０１４６】図５中、Ｐ０は高圧反応ガス供給口２の圧
力、Ｐ１は反応容器Ｃ内の気体圧力、Ｐ２は反応ガス排
気口４の圧力である。In FIG. 5, P0 is the pressure of the high-pressure reaction gas supply port 2, P1 is the gas pressure in the reaction vessel C, and P2 is the pressure of the reaction gas exhaust port 4.

【０１４７】高圧反応ガス供給装置Ｒより反応ガス種、
温度、圧力、流量、混合比を制御された高圧反応ガス
は、高圧反応ガス供給経路１を通じて電極浮上型高圧浮
上電極Ｈ１の内部へと供給される。電極浮上型高圧浮上
電極Ｈ１の内部へ供給された上記高圧反応ガスは、図２
の断面図に示される電極浮上型高圧浮上電極Ｈ１の、被
加工物Ｊと対向する位置に設けられた高圧力反応ガス供
給口２から高圧浮上電極Ｈ１と被加工物Ｊとの間へと供
給される。The reaction gas species,
The high-pressure reaction gas whose temperature, pressure, flow rate, and mixing ratio are controlled is supplied through the high-pressure reaction gas supply path 1 to the inside of the electrode floating type high-pressure floating electrode H1. The high-pressure reaction gas supplied into the electrode floating type high-pressure floating electrode H1 is shown in FIG.
Is supplied between the high-pressure floating electrode H1 and the workpiece J from the high-pressure reactant gas supply port 2 provided at a position facing the workpiece J of the electrode floating type high-pressure floating electrode H1 shown in the sectional view of FIG. Is done.

【０１４８】高圧反応ガスは、排気装置Ｅにより排気さ
れて低圧若しくは真空となった反応容器Ｃ内の気体雰囲
気との差圧により力を受け、電極浮上型高圧浮上電極Ｈ
１を被加工物Ｊより、微小間隔Ｄだけ浮上させるのであ
る。The high-pressure reaction gas is exhausted by the exhaust device E and receives a force due to a pressure difference between the low-pressure or vacuum gas atmosphere in the reaction vessel C, and the electrode floating type high-pressure floating electrode H
1 is floated from the workpiece J by a minute interval D.

【０１４９】また、微小間隔Ｄの浮上量は小さい為、高
圧力反応ガス供給口２から反応容器Ｃの低圧若しくは真
空雰囲気へと向かう気体流路のコンダクタンスは非常に
小さくなり、図５中の反応ガス供給口２における反応ガ
ス供給圧力Ｐ０から反応容器Ｃの低圧若しくは真空雰囲
気の圧力Ｐ１へ連続的に変化する圧力分布を形成する。Since the flying height of the minute interval D is small, the conductance of the gas flow path from the high-pressure reaction gas supply port 2 to the low-pressure or vacuum atmosphere of the reaction vessel C becomes very small, and the reaction shown in FIG. A pressure distribution that continuously changes from the reaction gas supply pressure P0 at the gas supply port 2 to the low pressure of the reaction vessel C or the pressure P1 of the vacuum atmosphere is formed.

【０１５０】また同時に、電極浮上型高圧浮上電極Ｈ１
の被加工物対向部分１２に開口し反応生成物排気経路３
（図２）を通じて排気装置Ｅ（図２）に接続され微小間
隔Ｄ中の反応ガス及び反応生成物を排気する反応ガス排
気口４には、圧力Ｐ２（Ｐ２＜Ｐ０）の低圧雰囲気が形
成されており、同様に高圧反応ガス供給口２における圧
力Ｐ０から反応ガス排気口４周辺領域の低圧力Ｐ２へ変
化する圧力分布を形成する。At the same time, the electrode floating type high voltage floating electrode H1
The reaction product exhaust path 3 which is opened at the workpiece facing portion 12
A low-pressure atmosphere with a pressure P2 (P2 <P0) is formed at a reaction gas exhaust port 4 that is connected to the exhaust device E (FIG. 2) through (FIG. 2) and exhausts the reaction gas and the reaction products in the minute interval D. Similarly, a pressure distribution that changes from the pressure P0 at the high-pressure reaction gas supply port 2 to the low pressure P2 in the region around the reaction gas exhaust port 4 is formed.

【０１５１】微小間隔Ｄによって変化する圧力分布によ
る、反応容器Ｃ内雰囲気との差圧と、電極重量のバラン
スによって電極浮上型高圧浮上電極Ｈ１は浮上するので
ある。The electrode floating type high-pressure floating electrode H1 floats due to a balance between the pressure difference between the atmosphere in the reaction vessel C and the electrode weight due to the pressure distribution that changes according to the minute interval D.

【０１５２】また、この微小間隔Ｄは、反応ガス供給圧
力Ｐ０、反応容器内圧力Ｐ１、電極重量、電極−被加工
物対向面積、高圧反応ガス供給口２の出口形状、高圧浮
上電極内の反応生成物排気口における排気速度によって
決定し、反応ガス供給圧力Ｐ０、温度、混合比または周
囲圧力、温度等を制御する事によって電極浮上型高圧浮
上電極Ｈ１と被加工物Ｊとの広い対向面積に対して１μ
ｍから数百μｍの微小間隔Ｄに安定して制御する事を可
能とする。The minute interval D is determined by the reaction gas supply pressure P0, the reaction vessel pressure P1, the electrode weight, the electrode-workpiece facing area, the exit shape of the high pressure reaction gas supply port 2, the reaction pressure in the high pressure floating electrode. It is determined by the exhaust speed at the product exhaust port, and by controlling the reaction gas supply pressure P0, the temperature, the mixing ratio or the ambient pressure, the temperature, etc., the electrode floating type high-pressure floating electrode H1 and the workpiece J have a large facing area. 1μ for
It is possible to control stably to a minute interval D from m to several hundred μm.

【０１５３】この時図示しない被加工物電極間ギャップ
測定装置によって上記電極−被加工物間隔を測定し、ス
テージＳによって上記電極−被加工物間隔を一定に保つ
事も原理的には可能であるが、プラズマの熱による電極
浮上型高圧浮上電極Ｈ１及び被加工物Ｊの変形が存在
し、またプラズマを発生させる為の電界が存在し、更に
腐食性雰囲気によってギャップ測定を行う事が困難な状
況となっている。この様な場合においても上記電極−被
加工物の圧力と、反応容器Ｃ内雰囲気の差圧を用いて電
極浮上型高圧浮上電極Ｈ１を被加工物Ｊに対して浮上さ
せる事により、電極浮上型高圧浮上電極Ｈ１と被加工物
Ｊとの広い対向面積に対して１μｍから高々数百μｍの
微小間隔Ｄに安定して制御する事を可能とするのであ
る。At this time, it is also possible in principle to measure the above-mentioned electrode-workpiece distance by a work-electrode gap measuring device (not shown) and to keep the above-mentioned electrode-workpiece distance constant by the stage S. However, there is a deformation of the electrode floating type high-voltage floating electrode H1 and the workpiece J due to the heat of the plasma, an electric field for generating the plasma exists, and it is difficult to perform the gap measurement due to a corrosive atmosphere. It has become. Even in such a case, the electrode floating type high pressure floating electrode H1 is floated with respect to the workpiece J by using the pressure between the electrode and the workpiece and the pressure difference between the atmosphere in the reaction vessel C. It is possible to stably control the small interval D from 1 μm to at most several hundred μm with respect to the wide opposing area between the high-voltage floating electrode H1 and the workpiece J.

【０１５４】また更に、図示しないが、磁性体若しくは
磁力発生機構を必要に応じて電極浮上型高圧浮上電極Ｈ
１及び被加工物固定用試料台に設け、磁性体若しくは磁
力発生機構から発生する磁力によって電極浮上型高圧浮
上電極Ｈ１を浮上させる事により、高圧反応ガス供給部
の圧力Ｐ０を低く設定する事が可能となり、電極浮上型
高圧浮上電極Ｈ１の重量でなく、目的とする加工特性に
よって高圧反応ガス供給部の圧力条件を設定する事も可
能である。Further, although not shown, a magnetic body or a magnetic force generating mechanism may be provided as necessary with an electrode floating type high-voltage floating electrode H.
1 and a workpiece holder for fixing the workpiece, and the magnetic force generated by the magnetic substance or the magnetic force generating mechanism causes the electrode floating type high pressure floating electrode H1 to float, thereby setting the pressure P0 of the high pressure reaction gas supply unit low. It becomes possible to set the pressure condition of the high-pressure reaction gas supply unit according to the desired processing characteristics instead of the weight of the electrode floating type high-pressure floating electrode H1.

【０１５５】（電力伝送線路開放端によってプラズマ
を発生させる方式及びその効果）次にその微小間隔Ｄ中
の高圧反応ガス雰囲気に局所領域高圧プラズマＰを発生
させる方式について同様に図１、２、３及び図６に基づ
いて説明する。(Method of Generating Plasma by Open End of Power Transmission Line and Its Effect) Next, the method of generating the local high-pressure plasma P in the high-pressure reaction gas atmosphere in the minute interval D is also shown in FIGS. A description will be given based on FIG.

【０１５６】図６は、電極浮上型高圧浮上電極Ｈ１の被
加工物Ｊと対向する部分に設けられた電力伝送線路開放
端７における局所領域高圧プラズマＰの発生を示す概略
図である。FIG. 6 is a schematic diagram showing generation of a local high-pressure plasma P at the power transmission line open end 7 provided at a portion of the electrode floating type high-voltage floating electrode H1 facing the workpiece J.

【０１５７】図１の電源Ｇより発生した電力は、電力伝
送線路Ｋを通り、共振・整合装置Ｍに達し、共振・整合
装置Ｍにより必要に応じて昇圧とインピーダンスマッチ
ングを行い、効率よく電力を高圧浮上電極Ｈ１へ伝達さ
せる。The power generated from the power supply G shown in FIG. 1 passes through the power transmission line K and reaches the resonance / matching device M. The resonance / matching device M performs boosting and impedance matching as necessary, and efficiently supplies power. The light is transmitted to the high-voltage floating electrode H1.

【０１５８】共振・整合装置Ｍにより昇圧された上記電
力は、フレキシブル電力伝送線路Ｉを通じて電極浮上型
高圧浮上電極Ｈ１に供給され、更に内側電極５及び外側
電極６及び絶縁体１１によって構成される電極内電力伝
送線路を通じて、高圧浮上電極Ｈ１の被加工物Ｊに対向
する部分であって且つ上記高圧反応ガス供給口２より離
れた位置に設けられた電力伝送線路開放端７に達する。The power boosted by the resonance / matching device M is supplied to the electrode levitation type high voltage levitation electrode H1 through the flexible power transmission line I, and further formed by the inner electrode 5, the outer electrode 6, and the insulator 11. Through the internal power transmission line, it reaches a power transmission line open end 7 provided at a position facing the workpiece J of the high-pressure floating electrode H1 and at a position away from the high-pressure reaction gas supply port 2.

【０１５９】ここで、電力伝送線路開放端７とは、上記
図２に示される実施の形態においては、電源Ｇより直流
若しくは交流電圧を伝送した電力伝送線路Ｋ、フレキシ
ブル電力伝送線路Ｉ、そして電極内電力伝送線路が、最
終的に高圧浮上電極Ｈ１の被加工物対向部分１２におい
て絶縁体１１によって内側電極５と外側電極６が絶縁状
態のまま終端している部分を意味し、図６に示されるよ
うに、内側電極５と外側電極６との間で高電圧、強いて
は強電界を発生させ、被加工物Ｊの有無に関係なく、内
側電極５と外側電極６との間でプラズマを発生させる事
を可能とし、更には外側電極６と内側電極５との間以外
にプラズマが拡大する事を抑制する事が出来、即ち局所
領域高圧プラズマＰを発生させる事ができる。Here, in the embodiment shown in FIG. 2, the open end 7 of the power transmission line is a power transmission line K transmitting a DC or AC voltage from a power source G, a flexible power transmission line I, and an electrode. The inner power transmission line means a portion where the inner electrode 5 and the outer electrode 6 are terminated in an insulating state by the insulator 11 in the workpiece facing portion 12 of the high-voltage floating electrode H1 as shown in FIG. As described above, a high voltage and, at the very least, a strong electric field is generated between the inner electrode 5 and the outer electrode 6, and a plasma is generated between the inner electrode 5 and the outer electrode 6 regardless of the presence or absence of the workpiece J. It is possible to suppress the expansion of the plasma other than between the outer electrode 6 and the inner electrode 5, that is, to generate the local region high-pressure plasma P.

【０１６０】電力伝送線路開放端７は高圧浮上電極Ｈ１
の被加工物対向部分１２に形成されている為、高圧浮上
電極Ｈ１と被加工物Ｊとの間の高圧反応ガス雰囲気に局
所領域プラズマＰを発生させるのである。The open end 7 of the power transmission line is connected to the high-voltage floating electrode H1.
Therefore, the local region plasma P is generated in the high-pressure reaction gas atmosphere between the high-pressure floating electrode H1 and the workpiece J.

【０１６１】以上のように実施の形態１によれば、内側
電極５をカソード電極、外側電極６をアノード電極とし
て、被加工物Ｊの有無に関係なく内側電極５、外側電極
６間でプラズマＰを発生させる事が可能である為、電極
走査の際に電力電送線路Ｋの等価回路が変化しない。こ
の結果、プラズマが安定し、高精度な被加工物仕上げ面
形状を得る事が出来る。As described above, according to the first embodiment, the inner electrode 5 is used as the cathode electrode and the outer electrode 6 is used as the anode electrode. Can be generated, so that the equivalent circuit of the power transmission line K does not change during electrode scanning. As a result, the plasma is stabilized, and a highly accurate finished surface shape of the workpiece can be obtained.

【０１６２】前述したプラズマの安定は、内側電極５を
カソード電極、外側電極６をアノード電極とする場合に
限らず、電力電送線路の開放端において高電界を発生さ
せ被加工物の有無に関係なくプラズマを発生させる事に
起因するものである。The stability of the plasma described above is not limited to the case where the inner electrode 5 is a cathode electrode and the outer electrode 6 is an anode electrode. A high electric field is generated at the open end of the power transmission line and the plasma is stable regardless of the presence or absence of the workpiece. This is due to the generation of plasma.

【０１６３】（清浄な加工表面を得る方式）次に実施
の形態１によって、高速度で被加工物Ｊの加工を行い、
かつ清浄な加工表面を得る方式について、同様に図１か
ら図５を用いて説明する。(Method for Obtaining Clean Work Surface) Next, according to the first embodiment, the work J is processed at a high speed.
A method for obtaining a clean processed surface will be described with reference to FIGS.

【０１６４】本発明は、高圧反応ガス雰囲気中における
局所領域プラズマにより高圧反応ガスに基づく高密度活
性種を発生させ、被加工物と化学反応させ、揮発性物質
に変化させる事により、被加工物に対する高加工速度を
達成する。According to the present invention, a high-density active species based on a high-pressure reactant gas is generated by a local region plasma in a high-pressure reactant gas atmosphere, and chemically reacted with the work to convert it into a volatile substance. To achieve high processing speed.

【０１６５】同時に反応容器内圧力を局所領域プラズマ
発生部の圧力より低く若しくは真空に維持する事によっ
て、清浄な被加工物加工表面を得る加工法である。反応
ガスに用いるガス種、温度、圧力は目的とする加工、及
び被加工物材料によって選択されなければならない。ま
た反応ガス種に用いるガスは一種類に限定せず、希ガ
ス、他の反応ガスと混合させ、最適条件を設定するもの
とする。At the same time, by maintaining the pressure in the reaction vessel lower than the pressure of the local region plasma generating section or at a vacuum, a processing method for obtaining a clean processing surface of the workpiece. The gas type, temperature, and pressure used for the reaction gas must be selected depending on the intended processing and the material of the workpiece. Further, the gas used as the reactive gas species is not limited to one type, but is mixed with a rare gas or another reactive gas to set the optimum conditions.

【０１６６】ここで、Ｓｉウエハを被加工物とし、反応
ガスとしてフッ素（Ｆ2）を数％含んだＨｅを用いて、
加工を行う場合を例にとって清浄な加工表面を得る方式
について更に詳しく説明する。Here, an Si wafer was used as a workpiece, and He containing several percent of fluorine (F 2 ) was used as a reactive gas.
The method of obtaining a clean processed surface will be described in more detail by taking processing as an example.

【０１６７】高圧反応ガス供給口２より供給された高圧
反応ガスは、図５に示されるように高圧反応ガス供給口
２の高圧力Ｐ０から、低圧若しくは真空雰囲気に排気さ
れた反応容器内圧力Ｐ１若しくは反応ガス排気口４の圧
力Ｐ２へと連続的に変化する圧力分布にしたがって移動
する。As shown in FIG. 5, the high pressure reaction gas supplied from the high pressure reaction gas supply port 2 is supplied from the high pressure P0 of the high pressure reaction gas supply port 2 to the pressure P1 in the reaction vessel exhausted to a low pressure or a vacuum atmosphere. Alternatively, it moves according to a pressure distribution that continuously changes to the pressure P2 of the reaction gas exhaust port 4.

【０１６８】高圧反応ガスは、高圧浮上電極Ｈ１の被加
工物対向部分１２に設けられた電力伝送線路開放端７に
発生した局所領域プラズマＰにおいて、分解・励起さ
れ、高圧反応ガスに基づく活性種を発生する。高圧反応
ガスに基づく活性種が被加工物原子を揮発性分子に変化
させる事によって局所領域プラズマＰ直下の加工を行
う。The high-pressure reactant gas is decomposed and excited in the local region plasma P generated at the open end 7 of the power transmission line provided in the workpiece facing portion 12 of the high-pressure floating electrode H1, and the active species based on the high-pressure reactant gas is generated. Occurs. The active species based on the high-pressure reaction gas changes the atoms of the workpiece into volatile molecules, thereby performing the processing immediately below the local region plasma P.

【０１６９】局所領域プラズマＰによる反応において、
生じるのは上記揮発性分子のみでなく、他に不揮発性分
子、上記不揮発性分子が凝縮した不揮発性物体、また炭
化粉末物、金属粉末等と上記ガス分子、上記揮発性分
子、及び不揮発性分子、不揮発性物体などが互いに付着
・重合した雰囲気パーティクル、が存在する。In the reaction by the local region plasma P,
Not only the volatile molecules described above, but also non-volatile molecules, non-volatile substances in which the non-volatile molecules are condensed, carbonized powders, metal powders and the like, the gas molecules, the volatile molecules, and the non-volatile molecules And atmospheric particles in which non-volatile objects and the like adhere and polymerize to each other.

【０１７０】前述した揮発性分子、不揮発性分子、不揮
発性物体および雰囲気パーティクルをまとめて反応生成
物と呼ぶ。ただし、上記雰囲気パーティクルは炭化粉
末、金属粉末等自体を含むものとし、炭化粉末、金属粉
末等は供給ガス、及び電極材料、反応容器材料等の各種
の各種構造物材料から発生する。The above-mentioned volatile molecules, nonvolatile molecules, nonvolatile objects, and atmospheric particles are collectively referred to as reaction products. However, the atmosphere particles include carbonized powder, metal powder, and the like, and the carbonized powder, metal powder, and the like are generated from a supply gas and various structural materials such as an electrode material and a reaction vessel material.

【０１７１】ここで今回、被加工物ＪとしてＳｉウエ
ハ、反応ガスとしてフッ素を数％含むＨｅを選択してい
る為、局所領域プラズマ中において、被加工物Ｊを構成
する原子Ｓｉと反応ガスとが解離して発生したフッ素原
子Ｆとの化学反応により、揮発性分子としてＳｉＦ4を Ｓｉ＋４Ｆ→ＳｉＦ4 の反応式によって生じるが、それら以外にＳｉmＦ
n（ｍ、ｎは整数）で表される種々のフッ化シリコンも
反応生成物として同時に生じ、中には非常に不安定で、
反応性の高い分子も含まれる。In this case, since the Si wafer is selected as the workpiece J and He containing several% of fluorine is selected as the reaction gas, the atomic Si constituting the workpiece J and the reaction gas are mixed in the local region plasma. There the chemical reaction with the fluorine atoms F generated by dissociation, but results in a SiF 4 by reaction formula Si + 4F → SiF 4 as a volatile molecule, Si m F other than those
Various silicon fluorides represented by n (m and n are integers) also occur simultaneously as reaction products, and some of them are very unstable,
Highly reactive molecules are also included.

【０１７２】上記ＳｉＦ4は、常温において揮発性であ
り、容易に被加工物表面より脱離し、またＳｉmＦ
n（ｍ、ｎは整数）等の分子も、局所領域プラズマＰ中
においてはプラズマ中のイオンの衝撃、また被加工物表
面の温度より与えられた運動エネルギーにより、容易に
被加工物表面より脱離するので、ＳｉＦ4およびＳｉmＦ
n（ｍ、ｎは整数）等の分子が被加工物表面の加工を阻
害する事は無い。[0172] The SiF 4 is volatile at room temperature, easily detached from the workpiece surface and Si m F
In the local region plasma P, molecules such as n (m and n are integers) are easily removed from the surface of the workpiece due to the impact of ions in the plasma and kinetic energy given by the temperature of the surface of the workpiece. because away, SiF 4 and Si m F
Molecules such as n (m and n are integers) do not hinder the processing of the workpiece surface.

【０１７３】しかし、上記プラズマＰより外部に放出さ
れた上記ＳｉmＦn（ｍ、ｎは整数）等の反応性分子は、
互いに凝縮、若しくは容易に上記反応容器内の雰囲気パ
ーティクルと凝縮し、雰囲気パーティクルの粒径及び粒
径の大きい雰囲気パーティクルの粒子数を増大させ、加
工中に被加工物表面再付着する事によって、プロセス自
体の歩留りを悪化させる事が考えられる。However, the reactive molecules such as Sim F n (m and n are integers) emitted outside from the plasma P are as follows:
By condensing with each other or easily condensing with the atmospheric particles in the above-mentioned reaction vessel, increasing the particle diameter of the atmospheric particles and the number of the atmospheric particles having a large particle diameter, and re-adhering to the surface of the workpiece during processing, thereby improving the process. It is conceivable that the yield will deteriorate.

【０１７４】しかし、本加工法においては、反応容器内
部の雰囲気気体圧力Ｐ１を、少なくとも反応ガス供給圧
力Ｐ０より低圧に、若しくは真空に排気する事によっ
て、雰囲気パーティクルを長時間浮遊させず、また、上
記反応生成物の平均自由工程が長くなる事により、雰囲
気パーティクルの形成自体を抑制し、また雰囲気パーテ
ィクルの粒径が増大する事を防ぎ、また雰囲気パーティ
クルの粒子数の増大を防ぎ、清浄な加工表面を得る事を
可能とする。However, in this processing method, the atmospheric gas pressure P1 inside the reaction vessel is evacuated to a pressure lower than at least the reaction gas supply pressure P0 or to a vacuum, so that the atmospheric particles are not suspended for a long time. By increasing the mean free path of the reaction product, the formation of atmosphere particles is suppressed, the particle diameter of the atmosphere particles is prevented from increasing, and the number of particles of the atmosphere particles is prevented from increasing. It is possible to obtain a surface.

【０１７５】ここで、問題となるのは、加工中及び加工
後に被加工物表面に再付着する上記雰囲気パーティクル
の粒径とその粒子数である。加工中に加工物表面に再付
着する上記雰囲気パーティクルにおいては、粒径及び粒
子数が小さい場合は、上記雰囲気パーティクルの多くは
元来、上記ＳｉＦ3、ＳｉＦ2が凝縮したものである為、
上記プラズマ中で即座に再分解され、被加工物表面より
脱離し、清浄な加工表面を得る事を可能とするのであ
る。Here, what matters is the particle size and the number of the above-mentioned atmospheric particles that adhere again to the surface of the workpiece during and after the processing. In the above-mentioned atmosphere particles which re-attach to the workpiece surface during processing, when the particle diameter and the number of particles are small, most of the above-mentioned atmosphere particles are originally the above-mentioned SiF 3 and SiF 2 which are condensed.
It is immediately re-decomposed in the above-mentioned plasma, desorbed from the surface of the workpiece, and a clean processed surface can be obtained.

【０１７６】また加工後に被加工物表面に再付着する上
記雰囲気パーティクルにおいては、粒子数が小さい場合
は、本プロセスによる加工後、さらに成膜、加工等を行
う場合においてもその小ささから影響を与えず、何ら問
題が無いのである。In the case of the above-mentioned atmospheric particles which adhere again to the surface of the workpiece after the processing, if the number of particles is small, the influence of the small size is also exerted in the case of performing film formation and processing after the processing by the present process. Without giving, there is no problem.

【０１７７】上記清浄な加工表面を得る方式は上記反応
容器内の圧力Ｐ１が小さい程、その効果が大きく、上記
反応容器内の圧力Ｐ１が真空である場合、最大の効果を
示す。The method for obtaining a clean processed surface has a greater effect as the pressure P1 in the reaction vessel is smaller, and exhibits the greatest effect when the pressure P1 in the reaction vessel is vacuum.

【０１７８】また更に金属材料、例えばタングステン
（Ｗ）、モリブデン（Ｍｏ）等、及びそれらを含む材料
を加工する場合においても、主たる反応生成物はＷ
Ｆ6、ＭｏＦ6であり、上記反応生成物は、常温において
揮発性物質ではなく、上記反応生成物は液体状態にな
る。Further, when a metal material such as tungsten (W), molybdenum (Mo) or the like and a material containing them are processed, the main reaction product is W.
F 6 and MoF 6 , and the reaction product is not a volatile substance at room temperature, and the reaction product is in a liquid state.

【０１７９】そこで上記反応容器Ｃ内の気体雰囲気を上
記反応生成物の蒸気圧より低く設定する事により、上記
ＷＦ6、ＭｏＦ6が液体状態になる事を防ぎ、上記被加工
物表面に付着する事を防ぎ、上記被加工物表面の清浄を
実現するのである。Therefore, by setting the gas atmosphere in the reaction vessel C lower than the vapor pressure of the reaction product, the WF 6 and MoF 6 are prevented from being in a liquid state and adhere to the surface of the workpiece. That is, the surface of the workpiece is cleaned.

【０１８０】また、上記高圧浮上電極Ｈ１−被加工物Ｊ
間の微小間隔Ｄ中の上記被加工物表面に沿った流れの中
において、局所領域プラズマＰ中で発生した上記反応生
成物の輸送及び除去についても、局所領域プラズマＰ中
の上記高圧反応ガスに基づく活性種と被加工物原子との
化学反応で発生した揮発性物質、及び上記反応生成物
は、上記被加工物表面に沿った流れによって速やかに上
記局所領域プラズマＰ中から移動し、一定領域によどむ
事の無いまま、上記高圧浮上電極Ｈ１中に設けられた上
記反応ガス排気口４を通じて反応ガス排気装置Ｅへと排
出され、上記被加工物表面若しくは反応容器内雰囲気の
清浄化を実現するのである。The high-pressure floating electrode H1-workpiece J
The transport and removal of the reaction product generated in the local region plasma P in the flow along the workpiece surface during the minute interval D between the high-pressure reaction gas in the local region plasma P The volatile substance generated by the chemical reaction between the active species based on the atoms of the workpiece and the reaction product are quickly moved out of the local region plasma P by the flow along the surface of the workpiece to form a certain region. Without being blocked, the gas is discharged to the reaction gas exhaust device E through the reaction gas exhaust port 4 provided in the high-pressure floating electrode H1, and the surface of the workpiece or the atmosphere in the reaction vessel is purified. It is.

【０１８１】また同時に、上記反応生成物はよどむ事の
無いまま上記高圧浮上電極Ｈ１周囲の真空若しくは低圧
雰囲気にも放出され、放出された上記反応生成物は、反
応容器Ｃ内を常時排気し、真空若しくは一定の圧力以下
に維持する事で、反応生成物の雰囲気パーティクルとの
凝縮、被加工物表面への再付着を避け、もって反応容器
内及び被加工物表面の清浄化を実現するのである。At the same time, the reaction product is also discharged into the vacuum or low-pressure atmosphere around the high-pressure floating electrode H1 without stagnation, and the released reaction product is constantly exhausted from the reaction vessel C. By maintaining the vacuum or below a certain pressure, the reaction product is prevented from condensing with atmospheric particles and re-adhering to the surface of the workpiece, thereby realizing the cleaning of the inside of the reaction vessel and the surface of the workpiece. .

【０１８２】（微小凹凸を平坦化する方法及び原理）
次に上記高圧反応ガスの被加工物表面に沿った流れ中の
プラズマによって上記被加工物表面の微小凹凸を平坦化
する方法及び原理について図５、７に基づいて説明す
る。(Method and Principle for Flattening Micro Unevenness)
Next, a method and a principle for flattening minute irregularities on the surface of the workpiece by the plasma of the high-pressure reaction gas flowing along the surface of the workpiece will be described with reference to FIGS.

【０１８３】図７は、局所領域プラズマＰ中の高圧反応
ガスの被加工物表面に沿った流れによる平坦化効果を示
す概念図である。FIG. 7 is a conceptual diagram showing a flattening effect by the flow of the high-pressure reaction gas in the local region plasma P along the surface of the workpiece.

【０１８４】図７中１３は、高圧反応ガスの被加工物表
面に沿った流れである。１４は、被加工物表面の微小凸
部である。１５は、被加工物表面の微小凹部である。Ｘ
１は、高圧反応ガスに基づく活性種である。Ｘ２は、被
加工物原子である。In FIG. 7, reference numeral 13 denotes a flow of the high-pressure reaction gas along the surface of the workpiece. Reference numeral 14 denotes a minute projection on the surface of the workpiece. Reference numeral 15 denotes a minute concave portion on the surface of the workpiece. X
1 is an active species based on a high-pressure reaction gas. X2 is a workpiece atom.

【０１８５】図５の様に、高圧浮上電極Ｈ１の被加工物
対向部１２と被加工物表面の微小間隔Ｄ間において、高
圧反応ガス供給口２の高圧力Ｐ０から、反応容器Ｃ内の
低圧若しくは真空圧力Ｐ１へ連続的に変化する圧力分布
を形成し、同じく高圧反応ガス供給口２の高圧力Ｐ０か
ら、排気装置Ｅに接続される反応生成物排気口４での圧
力Ｐ２に連続的に変化する圧力分布を形成し、高圧反応
ガスは図５に示される圧力分布にしたがって、微小間隔
Ｄ中を安定して被加工物表面に沿った流れとなって移動
する。As shown in FIG. 5, between the workpiece facing portion 12 of the high-pressure floating electrode H1 and the minute interval D between the workpiece surface and the high pressure P0 of the high pressure reaction gas supply port 2, the low pressure inside the reaction vessel C is reduced. Alternatively, a pressure distribution that continuously changes to the vacuum pressure P1 is formed, and the pressure distribution continuously changes from the high pressure P0 of the high-pressure reaction gas supply port 2 to the pressure P2 at the reaction product exhaust port 4 connected to the exhaust device E. A high-pressure reaction gas forms a changing pressure distribution, and moves stably within the minute interval D along the surface of the workpiece according to the pressure distribution shown in FIG.

【０１８６】従って本加工方式は、電源Ｇより電力伝送
線路開放端７に伝送された電力よって高圧反応ガスに基
づく局所領域プラズマＰを被加工物表面に沿った流れ中
にて発生させる為、局所領域プラズマＰにおいて生成し
た高圧反応ガスに基づく高密度活性種Ｘ１は図７に示す
ように被加工物表面の微小凸部１４の上部の被加工物原
子Ｘ２と選択的に反応する。この結果、局所領域プラズ
マＰ発生領域直下の被加工物表面を局所的に平滑化する
事が出来る。Therefore, in this processing method, the local area plasma P based on the high-pressure reaction gas is generated in the flow along the surface of the workpiece by the power transmitted from the power source G to the open end 7 of the power transmission line. The high-density active species X1 based on the high-pressure reaction gas generated in the region plasma P selectively reacts with the workpiece atoms X2 on the top of the minute projections 14 on the workpiece surface as shown in FIG. As a result, it is possible to locally smooth the workpiece surface immediately below the local region plasma P generation region.

【０１８７】また被加工物Ｊと高圧浮上電極Ｈ１とを相
対的に移動させる事によって被加工物Ｊの全体的な表面
平滑化を行うのである。即ち実施の形態１においては、
高圧浮上電極走査装置Ｕは電極浮上型高圧浮上電極Ｈ１
につなげられた走査ワイヤーもしくはベルト９を反応容
器Ｃ若しくは反応容器Ｃの外部に設置した駆動モーター
に繋げ、その駆動モータの引っ張りにより高圧浮上電極
Ｈ１を移動させる。Further, the entire surface of the workpiece J is smoothed by relatively moving the workpiece J and the high-voltage floating electrode H1. That is, in the first embodiment,
The high voltage levitation electrode scanning device U is an electrode levitation type high voltage levitation electrode H1
The scanning wire or belt 9 is connected to the reaction vessel C or a drive motor provided outside the reaction vessel C, and the high-voltage floating electrode H1 is moved by pulling the drive motor.

【０１８８】このようにして摺動部におけるパーティク
ルの発生を極めて押さえた駆動装置を実現する事ができ
る。In this way, it is possible to realize a driving device in which the generation of particles in the sliding portion is extremely suppressed.

【０１８９】ここで、上記高圧浮上電極走査装置Ｕは駆
動モーターとワイヤー若しくはベルト９を用いた走査方
式に限定せず、目的に応じて変更してもかまわない。Here, the high-voltage levitation electrode scanning device U is not limited to the scanning method using the driving motor and the wire or the belt 9, but may be changed according to the purpose.

【０１９０】（ガス供給口直下における加工量分布形
成の防止方式）更に実施の形態１において、電力伝送線
開放端７を高圧反応ガス供給口２から離れた位置に設置
する事による、高圧反応ガス供給口２直下における加工
量分布形成の防止について図２、図３及び図８Ａ、図８
Ｂに基づいて述べる。(Method for Preventing Formation of Processing Volume Distribution Immediately Below Gas Supply Port) Further, in the first embodiment, the open end 7 of the power transmission line is set at a position away from the high pressure reaction gas supply port 2 so that the high pressure reaction gas Prevention of formation of processing amount distribution immediately below supply port 2 FIGS. 2, 3, 8A, and 8
B will be described.

【０１９１】図８Ａは従来方式である、高圧反応ガス供
給口２を含む近傍に局所領域プラズマＰを発生させる場
合に供給口直下に形成される加工量分布を示す断面図で
ある。図８Ｂは本発明である、高圧反応ガス供給口２か
ら離れた位置に電力伝送線路開放端７を設置し、局所領
域プラズマＰを発生させる場合に局所領域プラズマＰ直
下に形成される加工量分布を示す断面図である。FIG. 8A is a cross-sectional view showing a processing amount distribution formed immediately below the supply port when the local area plasma P is generated in the vicinity including the high-pressure reaction gas supply port 2 according to the conventional method. FIG. 8B shows the distribution of the processing amount formed immediately below the local region plasma P when the local region plasma P is generated by installing the power transmission line open end 7 at a position away from the high-pressure reaction gas supply port 2 according to the present invention. FIG.

【０１９２】図８Ａおよび図８Ｂを参照して、１６Ａ
は、高圧反応ガス噴出口２から噴出する高圧反応ガス噴
出流である。１６Ｂは、微小間隔Ｄ中で被加工物表面に
沿う流れとなった高圧反応ガス流である。１７Ａは、高
圧反応ガス噴出口２を含む近傍に局所領域プラズマＰを
発生させる場合に高圧反応ガス噴出口２の直下に形成さ
れる加工量分布である。１７Ｂは、高圧反応ガス供給口
２から離れた位置に電力伝送線路開放端７を設置し、局
所領域プラズマＰを発生させる場合に局所領域プラズマ
Ｐ直下に形成される加工量分布である。Referring to FIGS. 8A and 8B, 16A
Is a high-pressure reaction gas ejection flow ejected from the high-pressure reaction gas ejection port 2. 16B is a high-pressure reaction gas flow that has flowed along the surface of the workpiece during the minute interval D. Reference numeral 17A denotes a processing amount distribution formed immediately below the high-pressure reactant gas outlet 2 when the local region plasma P is generated in the vicinity including the high-pressure reactant gas outlet 2. Reference numeral 17B denotes a processing amount distribution formed immediately below the local region plasma P when the power transmission line open end 7 is installed at a position distant from the high-pressure reaction gas supply port 2 and the local region plasma P is generated.

【０１９３】ここでもし、高圧反応ガス供給口２の直下
を含む高圧浮上電極Ｈ１の被加工物対向部分１２の全面
でプラズマを発生させる場合には、加工領域はプラズマ
発生領域、即ち、高圧反応ガス供給口２の直下を含む高
圧浮上電極Ｈ１の被加工物対向部分全面となるが、図８
Ａに示されるように、特に高圧反応ガス供給口２直下に
は、噴出した上記高圧反応ガス流１６Ａが被加工物表面
に、上記被加工物表面に垂直な方向から衝突する事とな
り、従って上記供給口２直下には、反応ガス供給口２の
周辺以外の、被加工物表面に沿う流れ１６Ｂが形成され
ている領域より加工量が多くなり、図８Ａ中１７Ａに示
されるような加工量分布を形成する。Here, if plasma is to be generated on the entire surface of the workpiece facing portion 12 of the high-pressure floating electrode H1 including immediately below the high-pressure reaction gas supply port 2, the processing region is a plasma generation region, that is, a high-pressure reaction region. FIG. 8 shows the entire surface of the high-pressure floating electrode H1 including the portion immediately below the gas supply port 2 facing the workpiece.
As shown in A, the jetted high-pressure reaction gas flow 16A collides with the surface of the workpiece from a direction perpendicular to the surface of the workpiece, particularly immediately below the high-pressure reaction gas supply port 2. Immediately below the supply port 2, the processing amount is larger than the area other than the vicinity of the reaction gas supply port 2 where the flow 16B along the workpiece surface is formed, and the processing amount distribution as shown in 17A in FIG. To form

【０１９４】従って高圧浮上電極Ｈ１の走査を行い被加
工物全面の平坦化を行なう際、高圧反応ガス供給口２の
位置と電極Ｈ１を走査する軌跡によって決定される加工
溝が加工後の被加工物加工表面に形成される事となる。Therefore, when the high-pressure floating electrode H1 is scanned to flatten the entire surface of the workpiece, the processing groove determined by the position of the high-pressure reaction gas supply port 2 and the trajectory of the scanning of the electrode H1 forms a processing groove after the processing. It will be formed on the work surface.

【０１９５】従って本実施例では、図８Ｂに示される様
に、内側電極５、外側電極６によって構成される電力伝
送線路の開放端部７にプラズマＰを発生させる事により
プラズマＰの発生する領域を規定し、局所領域プラズマ
Ｐとする。また図８Ｂ及び図３に示されるように、局所
領域プラズマＰの位置を高圧反応ガス供給口２から十分
離れた位置に設置する事で、高圧反応ガス供給口２直下
における加工量分布１７Ａの形成を防ぎ、即ち微小間隔
Ｄ中の被加工物表面に沿う流れでの局所領域プラズマＰ
発生部における加工により、非常に安定した形状の加工
痕、即ち上記局所領域プラズマ直下の加工量分布１７Ｂ
を形成し、上記加工痕を被加工物全体に走査させること
により、上記加工溝の無い平滑化及び平坦化を可能とし
た。Therefore, in the present embodiment, as shown in FIG. 8B, the plasma P is generated at the open end 7 of the power transmission line constituted by the inner electrode 5 and the outer electrode 6 so that the area where the plasma P is generated is formed. Is defined as the local region plasma P. Further, as shown in FIGS. 8B and 3, by setting the position of the local region plasma P at a position sufficiently distant from the high-pressure reaction gas supply port 2, the processing amount distribution 17 </ b> A immediately below the high-pressure reaction gas supply port 2 is formed. , That is, the local area plasma P in the flow along the workpiece surface during the minute interval D
The processing in the generation part causes a processing mark having a very stable shape, that is, a processing amount distribution 17B immediately below the local region plasma.
Is formed, and the above-mentioned processing marks are scanned over the entire workpiece, thereby enabling smoothing and flattening without the above-mentioned processing grooves.

【０１９６】その他の望ましい事項について以下に示
す。Other desirable items will be described below.

【０１９７】実施の形態１では、局所的な高圧プラズマ
Ｐを発生させ、上記プラズマ近傍の局所的な平滑化加工
を行い、上記電極Ｈ１と被加工物Ｊとを相対的に移動さ
せる事によって全体の平滑化、平坦化を行う為、また微
小間隔Ｄ中の反応ガスの高圧力と電極重量、及び反応容
器Ｃ内の低圧若しくは真空雰囲気との釣合によって上記
微小間隔Ｄを形成している為、共振・整合装置Ｍと電極
浮上型高圧浮上電極Ｈ１とを接続する電力伝送線路は変
形可能なフレキシブル電力伝送線路Ｉを用いる事が望ま
しいのである。In the first embodiment, a local high-pressure plasma P is generated, a local smoothing process in the vicinity of the plasma is performed, and the electrode H1 and the workpiece J are relatively moved. In order to perform the smoothing and flattening, and to form the minute interval D by balancing the high pressure of the reaction gas and the electrode weight in the minute interval D with the low pressure or the vacuum atmosphere in the reaction vessel C. It is desirable to use a deformable flexible power transmission line I as a power transmission line connecting the resonance / matching device M and the electrode floating type high-voltage floating electrode H1.

【０１９８】また、フレキシブル電力伝送線路Ｉと高圧
浮上電極Ｈ１との接続はコネクタ８によって行われ、こ
の接続は接続部での接触抵抗による損失、電磁波漏れの
無い様に行わなければならない。The connection between the flexible power transmission line I and the high-voltage floating electrode H1 is made by the connector 8, and this connection must be made so that there is no loss due to contact resistance at the connection portion and no leakage of electromagnetic waves.

【０１９９】さらに、絶縁体１１は電力伝送線路開放端
７に発生した局所領域プラズマＰによって腐食される事
の無い材料、例えば高純度アルミナ、窒化珪素等を用い
ることが望ましく、更に条件に応じて、被加工物を構成
する元素を少なくとも１種類以上含む事が望ましい。例
えばＳｉを加工する場合、絶縁体１１に窒化珪素（Ｓｉ
Ｎ）を用いる事により、被加工物Ｊへの不純物混入を低
減させる事ができる。Further, the insulator 11 is preferably made of a material which is not corroded by the local region plasma P generated at the open end 7 of the power transmission line, for example, high-purity alumina, silicon nitride or the like. It is desirable to include at least one or more elements constituting the workpiece. For example, when processing Si, silicon nitride (Si
By using N), the contamination of the workpiece J with impurities can be reduced.

【０２００】さらに、被加工物固定部Ｆに関して、被加
工物Ｊを固定する固定用治具が高圧浮上電極Ｈ１と対向
する部分へ突出した場合、前述したように高圧浮上電極
Ｈ１と被加工物Ｊとは非常に接近している為、接触によ
る高圧浮上電極Ｈ１の被加工物対向部分１２の損傷、微
小間隔Ｄ内の圧力分布変化等を引き起こすため、被加工
物固定部Ｆは真空チャック、静電チャック等の、被加工
物固定治具等が上記電極対向部に突出しない機構を用い
る事が望ましい。Further, when the fixing jig for fixing the workpiece J with respect to the workpiece fixing portion F protrudes to a portion facing the high-voltage floating electrode H1, as described above, the high-pressure floating electrode H1 and the workpiece are fixed. Since it is very close to J, it causes damage to the workpiece facing portion 12 of the high-voltage floating electrode H1 due to contact, changes in pressure distribution within the minute interval D, and the like. It is preferable to use a mechanism such as an electrostatic chuck in which a workpiece fixing jig or the like does not protrude from the electrode facing portion.

【０２０１】さらに、図４に示される、被加工物Ｊと被
加工物固定用試料台Ｔとの段差ｔは微小間隔Ｄ内の高圧
反応ガスの圧力分布を変化させ、被加工物Ｊに対する電
極浮上型高圧浮上電極Ｈ１の電極傾斜を引き起こし、更
には加工速度分布の変化、電極表面への被加工物の接触
等の問題を発生させるため、可能な限り小さくしなけれ
ばならない。Further, the step t between the workpiece J and the workpiece holder T shown in FIG. 4 changes the pressure distribution of the high-pressure reaction gas within the minute interval D, and In order to cause the electrode inclination of the floating type high-voltage floating electrode H1 and to cause problems such as a change in the processing speed distribution and contact of the workpiece with the electrode surface, the height must be reduced as much as possible.

【０２０２】さらに、高圧浮上電極Ｈ１の被加工物対向
部分１２に耐蝕・高硬度絶縁膜、例えばアルミナ溶射膜
などを形成し、高精度に平坦化する事により、プラズマ
による上記被加工物対向部分の腐食を軽減させ、寿命を
長期化させた高圧浮上電極を実現する事も可能である。Further, a corrosion-resistant and high-hardness insulating film, for example, an alumina sprayed film is formed on the workpiece facing portion 12 of the high-voltage floating electrode H1 and flattened with high precision. It is also possible to realize a high-pressure floating electrode with reduced corrosion and a longer life.

【０２０３】さらに、図９に示す超精密加工装置１００
Ａのように、高精度に平坦化させた高精度平坦化耐蝕・
高硬度絶縁体１８、例えば高純度アルミナ、窒化珪素等
を被加工物対向部１２の全体に取り付ける事によって膜
形成の困難な耐蝕・高硬度絶縁材料を被加工物対向部１
２に用いる事も可能である。Further, the ultra-precision processing apparatus 100 shown in FIG.
As shown in A, high precision flattened corrosion resistant
By attaching a high-hardness insulator 18, for example, high-purity alumina, silicon nitride, or the like, to the entire workpiece facing portion 12, a corrosion-resistant and high-hardness insulating material that is difficult to form a film can be used.
2 can also be used.

【０２０４】さらに、図１０に示す超精密加工装置１０
０Ｂのように、反応ガス供給口２に多孔質材料１９、例
えば多孔質アルミナ等を用いる事によって非常に安定し
て上記電極と被加工物との間の狭ギャップ間隔を制御す
る事を可能とする高圧力浮上電極Ｈ１Ｂを実現する事も
可能である。Further, the ultra-precision machining apparatus 10 shown in FIG.
By using a porous material 19, for example, porous alumina or the like for the reaction gas supply port 2 as in 0B, it is possible to control the narrow gap interval between the electrode and the workpiece very stably. It is also possible to realize the high-pressure floating electrode H1B.

【０２０５】さらに、高圧浮上電極Ｈ１において、高圧
反応ガス供給口２及び反応ガス排気口４の位置及び数量
は１つに限定せず、図１１に示す超精密加工装置１００
Ｃのように被加工物固定用試料台Ｔに、若しくは高圧浮
上電極Ｈ１及び被加工物固定用試料台Ｔの両方に設置す
る事も可能である。Further, in the high-pressure floating electrode H1, the positions and the numbers of the high-pressure reaction gas supply port 2 and the reaction gas exhaust port 4 are not limited to one, and the ultra-precision processing apparatus 100 shown in FIG.
As shown in C, it is also possible to install on the work piece fixing sample stand T, or on both the high-pressure floating electrode H1 and the work piece fixing sample stand T.

【０２０６】さらに、図１に示される試料台走査ステー
ジＳは目的に応じて鉛直方向運動機構、水平方向運動機
構、回転機構を持ち、また被加工物固定用試料台Ｔに固
定される被加工物Ｊの数は限定せず、被加工物を多数固
定する試料台を用いたバッチ処理を行う事により、生産
効率の向上を行う事が出来る。Further, the sample stage scanning stage S shown in FIG. 1 has a vertical movement mechanism, a horizontal movement mechanism, and a rotation mechanism according to the purpose. The number of objects J is not limited, and by performing batch processing using a sample stage on which a large number of workpieces are fixed, production efficiency can be improved.

【０２０７】図１２は多回転軸、回転数をもつ被加工物
多数固定用試料台Ｔ１００Ｄを用いたバッチ処理を示す
概念図である。図１２中、Ｔ１００Ｄは、被加工物多数
固定用試料台である。FIG. 12 is a conceptual diagram showing a batch process using a sample stage T100D for fixing a large number of workpieces having multiple rotation axes and rotation speeds. In FIG. 12, T100D is a sample stage for fixing a large number of workpieces.

【０２０８】図１２に示される超精密加工装置１００Ｄ
においては、ＸＹＺ方向への多方向走査が可能な走査ス
テージＳ上に、回転機構θ１をもつ被加工物多数固定用
試料台Ｔ１００Ｄが設置され、更に被加工物多数固定用
試料台Ｔ１００Ｄ上には、被加工物多数固定用試料台Ｔ
１００Ｄの持つ回転機構θ１とは同じ若しくは異なる回
転数、回転方向、回転軸の回転機構θをそれぞれ持つ被
加工物固定用試料台Ｔが多数個設置され、被加工物固定
用試料台Ｔ上に被加工物Ｊをそれぞれ設置し、電極浮上
型高圧浮上電極Ｈ１が被加工物Ｊに対向する事によりバ
ッチ処理を行うものである。走査ワイヤー若しくはベル
ト９を通じて電極浮上型高圧浮上電極Ｈ１を走査させ、
また走査ステージＳの多方向走査、また被加工物固定用
試料台Ｔ及び被加工物多数固定用試料台Ｔ１００Ｄの回
転機構を用いて、ランダムに加工を行う事によって、被
加工物Ｊをそれぞれ均一に加工し、非常に平坦度の高い
被加工物加工表面を得ると同時に、バッチ処理により生
産効率の向上を行う事が出来るのである。An ultra-precision machining apparatus 100D shown in FIG.
In, a sample stage T100D for fixing a large number of workpieces having a rotating mechanism θ1 is installed on a scanning stage S capable of multidirectional scanning in the XYZ directions, and further, a sample stage T100D for fixing a large number of workpieces. , Sample stage T for fixing many workpieces
A large number of workpiece fixing sample tables T each having the same or different rotation number, rotation direction, and rotation axis rotation mechanism θ as the rotation mechanism θ1 of 100D are installed on the workpiece fixing sample table T. The workpieces J are respectively installed, and the batch process is performed by facing the workpiece J with the electrode floating type high-voltage floating electrode H1. The electrode floating type high-voltage floating electrode H1 is scanned through a scanning wire or a belt 9,
In addition, the workpieces J are uniformly processed by performing multi-directional scanning of the scanning stage S and performing random processing using the rotating mechanism of the workpiece table T for fixing the workpiece and the sample table T100D for fixing a large number of workpieces. To obtain a work surface with a very high degree of flatness and, at the same time, to improve production efficiency by batch processing.

【０２０９】また、高圧浮上電極−被加工物間の微小間
隔Ｄへ高圧反応ガスを供給する高圧反応ガス供給口２、
反応生成物排気口４、及び高圧浮上電極の被加工物対向
部分１２の形状は被加工物Ｊの形状、大きさ、仕上げ精
度などを目的とする加工に応じて変化する。なお高圧浮
上電極Ｈ１の実施の形態はこれに限定しない。 （実施の形態２）次に被加工物浮上型高圧浮上電極Ｈ２
を用いた本発明の実施の形態２について図１３から図１
５に基づいて詳細な説明を行う。A high-pressure reactant gas supply port 2 for supplying a high-pressure reactant gas to a minute interval D between the high-pressure floating electrode and the workpiece,
The shapes of the reaction product exhaust port 4 and the workpiece facing portion 12 of the high-pressure floating electrode change depending on the processing of the workpiece J such as the shape, size, and finishing accuracy. The embodiment of the high-voltage floating electrode H1 is not limited to this. (Embodiment 2) Next, a workpiece floating type high-voltage floating electrode H2
Embodiment 2 of the present invention using FIG.
5 will be described in detail.

【０２１０】被加工物浮上型高圧浮上電極Ｈ２とは、電
力を電源Ｇより伝達され、局所領域プラズマＰを発生得
る電極に対して、被加工物Ａを浮上させる方式を用いた
高圧浮上電極である。この場合、反応容器Ｃ内に設置さ
れるのは被加工物浮上型高圧浮上電極Ｈ２であり、浮上
するのは被加工物Ａの方である。The workpiece floating type high-voltage floating electrode H2 is a high-voltage floating electrode using a method in which electric power is transmitted from a power source G and a workpiece A is floated with respect to an electrode capable of generating a local region plasma P. is there. In this case, a workpiece floating type high-voltage floating electrode H2 is set in the reaction vessel C, and the workpiece A floats.

【０２１１】図１３は、被加工物浮上型高圧浮上電極Ｈ
２の概略断面図である。Ａは浮上被加工物、Ｈ２は被加
工物浮上型高圧浮上電極、Ｙは浮上被加工物走査ワイヤ
ー若しくはベルトである。FIG. 13 shows a workpiece floating type high-voltage floating electrode H
2 is a schematic sectional view of FIG. A is a floating workpiece, H2 is a workpiece floating type high-voltage floating electrode, and Y is a floating workpiece scanning wire or belt.

【０２１２】被加工物浮上型高圧浮上電極Ｈ２は図１３
中には図示されない走査ステージＳ上に設置され、走査
ステージＳにより、被加工物浮上型高圧浮上電極Ｈ２を
走査する事により被加工物浮上型高圧浮上電極Ｈ２と浮
上被加工物Ａとの相対的位置を変化させる事ができる。The workpiece floating type high-voltage floating electrode H2 is shown in FIG.
The scanning stage S is installed on a scanning stage S (not shown). The scanning stage S scans the workpiece floating-type high-voltage floating electrode H2, thereby causing a relative movement between the workpiece floating-type high-voltage floating electrode H2 and the floating workpiece A. You can change the target position.

【０２１３】浮上被加工物走査ワイヤー若しくはベルト
Ｙは、図１３中には図示されない駆動モーター１０に接
続され、電極浮上型高圧浮上電極Ｈ１と同様に駆動モー
ター１０を回転させる事によって浮上被加工物Ａを走査
させ、被加工物浮上型高圧浮上電極Ｈ２と浮上被加工物
Ａとの相対的位置を変化させる事ができる。駆動モータ
ー１０及び浮上被加工物走査ワイヤー若しくはベルトＹ
をあわせて被加工物固定用試料台走査装置と呼ぶ。The floating workpiece scanning wire or belt Y is connected to a drive motor 10 not shown in FIG. 13, and is rotated by driving the drive motor 10 in the same manner as the electrode floating type high-voltage floating electrode H1. By scanning A, the relative position between the workpiece floating type high-voltage floating electrode H2 and the floating workpiece A can be changed. Drive motor 10 and scanning wire or belt Y for floating workpiece
Is also referred to as a sample stage scanning device for fixing a workpiece.

【０２１４】実施の形態２では、局所領域プラズマＰを
発生させる被加工物高圧浮上電極Ｈ２に対し、浮上被加
工物Ａを微小間隔Ｄだけ浮上させる被加工物浮上方式に
よる高圧浮上電極であり、前述した電極浮上型高圧浮上
電極Ｈ１と同様、微小間隔Ｄ中に発生した局所領域プラ
ズマＰ中の高圧反応ガスに基づく活性種と浮上被加工物
Ａとの化学反応により、浮上被加工物Ａの局所領域プラ
ズマＰ近傍を局所的に平滑化させ、走査ステージＳ及び
被加工物固定用試料台走査装置を用いて被加工物浮上型
高圧浮上電極Ｈ２と浮上被加工物Ａの相対的位置を変化
させる事によって全体的な平坦化を行う。In the second embodiment, a high-voltage floating electrode of a workpiece floating type in which a floating workpiece A is floated at a small interval D with respect to a high-pressure workpiece floating electrode H2 that generates a local region plasma P, Similarly to the above-mentioned electrode levitation type high pressure levitation electrode H1, a chemical reaction between the active species based on the high pressure reaction gas in the local region plasma P generated during the minute interval D and the floating workpiece A causes the floating workpiece A The vicinity of the local area plasma P is locally smoothed, and the relative position of the workpiece floating type high-voltage floating electrode H2 and the floating workpiece A is changed using the scanning stage S and the workpiece stage scanning device for fixing the workpiece. By doing so, overall flattening is performed.

【０２１５】実施の形態２においては、電極浮上型高圧
浮上電極Ｈ１で示した高圧反応ガス供給口２の形状及び
位置、反応生成物排気口４の形状及び位置、電力伝送線
路開放端７の形状及び位置、構造は実施の形態１の場合
と同様である。In the second embodiment, the shape and position of the high-pressure reaction gas supply port 2, the shape and position of the reaction product exhaust port 4, and the shape of the open end 7 of the power transmission line are indicated by the electrode floating type high-pressure floating electrode H 1. The position, the structure, and the structure are the same as those in the first embodiment.

【０２１６】実施の形態２においては、ガラス基板等の
軽量な被加工物において、比較的低圧な供給圧力によっ
て、被加工物Ａを被加工物固定用試料台Ｔと共に浮上さ
せる事が出来、加工条件の圧力条件を広く設定する事を
可能とし、同時に比較的容易に被加工物搬送を行う事が
でき、超精密加工装置全体の生産性を向上させる事が出
来るものである。In the second embodiment, the work A can be lifted together with the work holder T by a relatively low supply pressure on a light work such as a glass substrate. The pressure conditions can be set widely, and at the same time, the workpiece can be transported relatively easily, and the productivity of the entire ultra-precision machining apparatus can be improved.

【０２１７】図１３中に図示しない超精密加工装置全体
の構成、上記浮上被加工物Ａの浮上原理、及び方式、局
所領域プラズマＰの発生原理及び方式、高加工速度及び
被加工物の加工表面の清浄化を同時に実現する原理及び
方式、微小間隔Ｄ中の被加工物表面に沿う流れの中で局
所プラズマＰを発生させ加工を行うことにより被加工物
を平坦化、平滑化する原理及び方式、および高圧反応ガ
ス供給口２から離れた位置に局所領域プラズマを発生さ
せ高圧反応ガス供給口２直下における上記加工量分布１
７Ａの形成を防止する原理および方式については、電極
浮上型高圧浮上電極Ｈ１と同様に被加工物浮上型高圧浮
上電極Ｈ２に対して適用できる。The configuration of the entire ultra-precision processing apparatus not shown in FIG. 13, the floating principle and method of the floating workpiece A, the generation principle and method of the local region plasma P, the high processing speed and the processing surface of the workpiece And method of simultaneously realizing the cleaning of the workpiece, and the principle and method of flattening and smoothing the workpiece by generating and processing the local plasma P in the flow along the workpiece surface in the minute interval D , And a local area plasma is generated at a position distant from the high-pressure reaction gas supply port 2 so that the processing amount distribution 1 just below the high-pressure reaction gas supply port 2
The principle and method of preventing the formation of 7A can be applied to the workpiece floating type high-voltage floating electrode H2, similarly to the electrode floating type high-voltage floating electrode H1.

【０２１８】また、実施の形態１で前述した高圧浮上電
極Ｈ１の形状、前述した電極浮上電極電極Ｈ１の被加工
物対向部１２に対する耐蝕・高硬度絶縁膜形成、図９に
示した電極浮上型高圧浮上電極Ｈ１の被加工物対向部１
２に対する高精度平坦化耐食蝕・高硬度絶縁膜材料１８
の設置、図１０に示した高圧反応ガス供給口に対する多
孔質材料の設置、図１２に示した多回転軸、回転数をも
つ被加工物多数固定用試料台Ｔ１００Ｄによるバッチ処
理方式、および被加工物固定用試料台Ｔ、被加工物固定
部Ｆ等に関する構成、方式は、被加工物浮上型高圧浮上
電極Ｈ２に対しても同様に適用する事が出来るものであ
る。The shape of the high-voltage floating electrode H1 described in the first embodiment, the formation of a corrosion-resistant and high-hardness insulating film on the workpiece facing portion 12 of the electrode floating electrode H1 described above, and the electrode floating type shown in FIG. Workpiece facing part 1 of high-voltage floating electrode H1
High Precision Flattening Corrosion and Corrosion Resistant / Hard Hardness Insulation Material 18
, A porous material for the high-pressure reactant gas supply port shown in FIG. 10, a batch processing method using a sample stage T100D for fixing a large number of workpieces having multiple rotation axes and rotation speeds shown in FIG. 12, and a workpiece The configuration and method relating to the workpiece fixing sample stage T, the workpiece fixing portion F, and the like can be similarly applied to the workpiece floating type high-voltage floating electrode H2.

【０２１９】また図１４に示すように、被加工物浮上型
高圧浮上電極Ｈ２Ａにおいて、高圧反応ガス供給口２及
び反応生成物排気口４の位置及び数量は１つに限定せ
ず、被加工物固定用試料台Ｔに若しくは高圧浮上電極Ｈ
２及び被加工物固定用試料台Ｔの両方に設置する事も可
能である。Further, as shown in FIG. 14, the position and quantity of the high-pressure reaction gas supply port 2 and the reaction product exhaust port 4 in the workpiece floating type high-pressure floating electrode H2A are not limited to one. On the sample stage T for fixing or the high-voltage floating electrode H
It is also possible to install both on the sample stage 2 and on the sample stage T for fixing the workpiece.

【０２２０】図１５は被加工物浮上型高圧浮上電極Ｈ２
において、浮上体を、図１３に示した被加工物Ａを固定
した被加工物固定用試料台Ｔでなく、被加工物Ａのみと
した場合の例である。FIG. 15 shows a workpiece floating type high-voltage floating electrode H2.
In this example, the floating body is not the work-fixing sample stage T to which the work A shown in FIG. 13 is fixed, but only the work A.

【０２２１】図１５中Ｙ１は、被加工物Ａを拘束若しく
は走査させ得る浮上被加工物拘束走査機構であり、直接
走査ワイヤー若しくはベルトＹを被加工物Ａに接続させ
る事無く、被加工物Ａの浮上方向とは別に、側面より被
加工物Ａを押す事により被加工物Ａを走査させる機構で
ある。In FIG. 15, reference numeral Y1 denotes a floating workpiece restraining scanning mechanism capable of restraining or scanning the workpiece A, and without directly connecting the scanning wire or the belt Y to the workpiece A, Is a mechanism for scanning the workpiece A by pressing the workpiece A from the side surface, separately from the floating direction of the workpiece.

【０２２２】浮上被加工物拘束走査機構Ｙ１を有する超
精密加工装置２００Ｂによれば、電極浮上型高圧浮上電
極Ｈ１及び図１４の被加工物浮上型高圧浮上電極Ｈ２に
おける被加工物のチャッキング時間を省略する事が出
来、浮上被加工物拘束走査機構Ｙ１により、一定の方向
に浮上被加工物を移動させ、流れ作業的に加工し、そし
て上記被加工物搬送を行う事により、プロセスの生産性
を向上させる事を可能とする。According to the ultra-precision machining apparatus 200B having the floating workpiece restraining scanning mechanism Y1, the chucking time of the workpiece at the electrode floating type high voltage floating electrode H1 and the workpiece floating type high voltage floating electrode H2 of FIG. Can be omitted, and the floating workpiece is moved in a certain direction by the floating workpiece restraining scanning mechanism Y1, processed in a flow operation, and the workpiece is transported, thereby producing a process. It is possible to improve the performance.

【０２２３】（実施の形態３）更に図１６、１７及び図
１８Ａ、１８Ｂに基づいて導波管を電力伝送線路に用い
た電極浮上型高圧浮上電極Ｈ３による本発明の実施の形
態３について説明する。(Embodiment 3) A third embodiment of the present invention using an electrode floating type high voltage floating electrode H3 using a waveguide as a power transmission line will be described with reference to FIGS. 16 and 17 and FIGS. 18A and 18B. .

【０２２４】ここで導波管を電力伝送線路に用いる場
合、電力伝送線路は直流及び周波数の低い交流を伝送す
る事が出来ず、従って電源Ｇは少なくとも周波数１０Ｍ
Ｈｚ〜１ＧＨｚの高周波、若しくは１ＧＨｚ以上のマイ
クロ波電源Ｇ１を用いるものとする。Here, when the waveguide is used as a power transmission line, the power transmission line cannot transmit DC and AC having a low frequency.
It is assumed that a high frequency of 1 Hz to 1 GHz or a microwave power supply G1 of 1 GHz or more is used.

【０２２５】図１６は、導波管を上記電力伝送線路に用
いた電極浮上型高圧浮上電極Ｈ３の断面図である。図１
７は、導波管を電力伝送線路に用いた電極浮上型高圧浮
上電極Ｈ３を別の方向より見た部分断面図である。図１
８Ａは、導波管を電力伝送線路に用いた電極浮上型高圧
浮上電極Ｈ３自体の下方斜視図である。図１８Ｂは導波
管を電力伝送線路に用いた電極浮上型高圧浮上電極自体
の上方斜視図である。FIG. 16 is a sectional view of an electrode floating type high-voltage floating electrode H3 using a waveguide as the power transmission line. FIG.
FIG. 7 is a partial cross-sectional view of the electrode floating type high-voltage floating electrode H3 using a waveguide as a power transmission line when viewed from another direction. FIG.
FIG. 8A is a lower perspective view of an electrode floating type high-voltage floating electrode H3 itself using a waveguide as a power transmission line. FIG. 18B is a top perspective view of the electrode floating type high-voltage floating electrode itself using a waveguide as a power transmission line.

【０２２６】図１６中、Ｈ３は、導波管を上記電力伝送
線路に用いた電極浮上型高圧浮上電極である。Ｐは、局
所領域高圧プラズマである。２４は、マイクロ波を印加
する事によって高電界を発生し、電極浮上型高圧浮上電
極Ｈ３と被加工物Ｊとの間の微小間隔Ｄに局所領域プラ
ズマＰを発生させる導波管開放端である。In FIG. 16, reference numeral H3 denotes an electrode floating type high voltage floating electrode using a waveguide as the power transmission line. P is a local region high pressure plasma. Reference numeral 24 denotes a waveguide open end that generates a high electric field by applying a microwave and generates a local region plasma P at a minute interval D between the electrode floating type high-voltage floating electrode H3 and the workpiece J. .

【０２２７】２１は、マイクロ波電源Ｇ１より供給され
たマイクロ波を必要に応じて昇圧・マッチングする昇圧
・整合装置Ｍから高圧浮上電極Ｈ３にマイクロ波を伝送
するフレキシブル導波管である。２２は、フレキシブル
導波管２１より、電極浮上型高圧浮上電極Ｈ３の被加工
物対向部分２８に位置する導波管開放端２４ヘマイクロ
波を伝達する電極内導波管である。Reference numeral 21 denotes a flexible waveguide for transmitting microwaves from the boosting / matching device M for boosting and matching the microwave supplied from the microwave power supply G1 to the high-voltage floating electrode H3 as necessary. Reference numeral 22 denotes an in-electrode waveguide for transmitting microwaves from the flexible waveguide 21 to the waveguide open end 24 located at the workpiece facing portion 28 of the electrode floating type high-voltage floating electrode H3.

【０２２８】２３は、電極内導波管２２の内部空間と、
電極浮上型高圧浮上電極Ｈ３と被加工物Ｊとの間の微小
間隔Ｄの高圧反応ガス雰囲気を分離する絶縁体である。
２０は、高圧反応ガス供給口の出口形状がスリット形状
である高圧反応ガス供給スリットである。Reference numeral 23 denotes the internal space of the in-electrode waveguide 22,
An electrode floating type is an insulator that separates a high-pressure reaction gas atmosphere at a minute interval D between the high-pressure floating electrode H3 and the workpiece J.
Reference numeral 20 denotes a high-pressure reaction gas supply slit in which the outlet of the high-pressure reaction gas supply port has a slit shape.

【０２２９】図１７中、Ｔ２は、凹状形状をなし、凹部
内側底面において被加工物Ｊを固定し凹部内側側壁にお
いて、電極浮上型高圧浮上電極Ｈ３の移動を拘束する凹
状被加工物固定用試料台である。２５は、高圧気体供給
口であり、上記凹状被加工物固定用試料台Ｔ２の内側側
壁に設けられ、高圧気体供給口２５より噴出する高圧気
体により電極浮上型高圧浮上電極Ｈ３に接触する事無
く、電極浮上型高圧浮上電極Ｈ３の運動方向を一定の方
向に拘束する。２６は、高圧気体供給口２５に図示しな
い高圧気体供給装置より、高圧気体を輸送する高圧気体
供給経路である。In FIG. 17, T2 is a concave-shaped workpiece for fixing the workpiece J on the inner bottom surface of the recess and restraining the movement of the electrode floating type high-voltage floating electrode H3 on the inner side wall of the recess. It is a stand. Reference numeral 25 denotes a high-pressure gas supply port, which is provided on the inner side wall of the concave workpiece fixing sample stand T2 and does not come into contact with the electrode floating type high-pressure floating electrode H3 by the high-pressure gas ejected from the high-pressure gas supply port 25. In addition, the direction of movement of the electrode floating type high-voltage floating electrode H3 is restricted in a certain direction. Reference numeral 26 denotes a high-pressure gas supply path for transporting a high-pressure gas from a high-pressure gas supply device (not shown) to the high-pressure gas supply port 25.

【０２３０】図１８Ａ中、２７は、高圧反応ガス供給ス
リット２０から、反応ガス排気口４へ、若しくは電極Ｈ
３周囲の気体雰囲気へ向かって電極Ｈ３と被加工物Ｊと
の間の微小間隔Ｄを流れる被加工物表面に沿った流れで
ある。In FIG. 18A, reference numeral 27 denotes the high-pressure reaction gas supply slit 20 to the reaction gas exhaust port 4 or the electrode H.
3 is a flow along the surface of the workpiece flowing through the minute gap D between the electrode H3 and the workpiece J toward the surrounding gas atmosphere.

【０２３１】図１６及び１７、１８Ａ、１８Ｂ中、被加
工物Ｊ、被加工物固定部Ｆ、高圧反応ガス供給経路１、
反応生成物排気経路３、および反応生成物排気口４につ
いては、前述した内側電極５、外側電極６及び絶縁体１
１によって電極内電力伝送線路を構成する高圧浮上電極
Ｈ１、Ｈ２と同様の構成である。In FIGS. 16 and 17, 18A and 18B, the workpiece J, the workpiece fixing portion F, the high-pressure reactant gas supply path 1,
Regarding the reaction product exhaust path 3 and the reaction product exhaust port 4, the above-described inner electrode 5, outer electrode 6 and insulator 1
1 has the same configuration as the high-voltage levitation electrodes H1 and H2 constituting the in-electrode power transmission line.

【０２３２】また図示しない走査ステージＳ、反応容器
Ｃ、電源Ｇ、電力伝達線路Ｋ、共振・整合装置Ｍ、高圧
反応ガス供給装置Ｒ、排気装置Ｅ、高圧浮上電極走査装
置Ｕ、および制御装置Ｎも、前述した高圧浮上電極Ｈ
１、Ｈ２と同様の構成となる。但し電源Ｇは、高周波若
しくはマイクロ波電源である為これを新たに電源Ｇ１と
おく事とする。A scanning stage S (not shown), reaction vessel C, power supply G, power transmission line K, resonance / matching device M, high-pressure reaction gas supply device R, exhaust device E, high-pressure floating electrode scanning device U, and control device N Also, the high-voltage floating electrode H
1, H2. However, since the power supply G is a high frequency or microwave power supply, this is newly set as a power supply G1.

【０２３３】以下に 導波管を電力伝送線路に用いた電極浮上型高圧浮上電
極Ｈ３の構成 高圧浮上電極Ｈ３の浮上方式 高圧浮上電極Ｈ３の加工方式 導波管を電力伝送線路に用いる事の効果 電源Ｇにマイクロ波電源を用いる事の効果 について以下に詳述する。The structure of the electrode levitation type high voltage levitation electrode H3 using the waveguide as the power transmission line The levitation method of the high voltage levitation electrode H3 The processing method of the high voltage levitation electrode H3 The effect of using the waveguide for the power transmission line The effect of using a microwave power supply as the power supply G will be described in detail below.

【０２３４】（導波管を電力伝送線路に用いた電極浮
上型高圧浮上電極Ｈ３の構成）導波管を電力伝送線路に
用いた電極浮上型高圧浮上電極Ｈ３は、図１８Ａ及び図
１８Ｂに示されるように、金属立方体において、被加工
物Ｊと対向する一面を高精度に平坦化し、その面を電極
浮上型高圧浮上電極Ｈ３の被加工物対向部分２８とす
る。(Configuration of Electrode Levitating Type High Voltage Levitation Electrode H3 Using Waveguide for Power Transmission Line) The electrode floating type high voltage levitation electrode H3 using the waveguide for power transmission line is shown in FIGS. 18A and 18B. As described above, in the metal cube, one surface facing the workpiece J is flattened with high precision, and the surface is used as the workpiece facing portion 28 of the electrode floating type high-voltage floating electrode H3.

【０２３５】更に上記金属立方体内部に、上記マイクロ
波電力を伝達し得る電極内導波管２２を設け、且つ被加
工物対向部分２８内の所望の位置に向かって開放終端化
させ、開放終端化した電極内導波管２２内部の空間を絶
縁体２３によって塞ぎ、電極浮上型高圧浮上電極Ｈ３の
周囲の気体雰囲気より分離する。この電極内導波管２２
の、被加工物対向部分２８において開放終端化された部
分を導波管開放端２４と呼ぶ。Further, an in-electrode waveguide 22 capable of transmitting the microwave power is provided inside the metal cube, and is open-terminated toward a desired position in the workpiece-facing portion 28. The space inside the in-electrode waveguide 22 is closed by the insulator 23 and separated from the gas atmosphere around the electrode floating type high-voltage floating electrode H3. The waveguide 22 in the electrode
The open-ended portion of the workpiece facing portion 28 is referred to as the waveguide open end 24.

【０２３６】電極内導波管２２に、導波管開放端２４と
は反対方向からフレキシブル導波管２１を接続すること
により、電源Ｇ１より発生したマイクロ波電力を電極浮
上型高圧浮上電極Ｈ３内の電極内導波管２２、更には導
波管開放端２４にまでマイクロ波電力を伝達させること
を可能とし、導波管開放端２４の位置に局所領域プラズ
マＰを発生させる。By connecting the flexible waveguide 21 to the in-electrode waveguide 22 from the direction opposite to the waveguide open end 24, the microwave power generated from the power source G1 is supplied to the electrode floating type high-voltage floating electrode H3. The microwave power can be transmitted to the in-electrode waveguide 22 and further to the waveguide open end 24, and a local region plasma P is generated at the position of the waveguide open end 24.

【０２３７】絶縁体２３は高硬度であり、且つ局所領域
プラズマＰに対して耐食性を持つ材質が望ましく、例え
ば高純度アルミナ、窒化珪素などが挙げられる。更に被
加工物Ｊを構成する元素を少なくとも１種類以上含む材
料、例えばＳｉを加工する場合には、絶縁体２３に窒化
珪素を用い、被加工物Ｊへの不純物混入を低減させるこ
とが望ましい。The insulator 23 is preferably made of a material having high hardness and having corrosion resistance to the local region plasma P, such as high-purity alumina and silicon nitride. Further, when processing a material containing at least one or more types of elements constituting the workpiece J, for example, Si, it is desirable to use silicon nitride for the insulator 23 to reduce impurity contamination into the workpiece J.

【０２３８】絶縁体２３の設置後も被加工物対向部分２
８が高精度な平坦面となる程度まで、再度平坦化加工す
ることが望ましい。更に、被加工物対向部分２８に高圧
反応ガスを噴出する為の高圧反応ガス供給スリット２０
を開口させ、その位置は、導波管開放端２４より離れた
位置とする。Even after the insulator 23 is installed, the workpiece facing portion 2
It is desirable that the flattening process be performed again until the flat surface 8 becomes a highly accurate flat surface. Further, a high-pressure reactant gas supply slit 20 for ejecting a high-pressure reactant gas to the workpiece facing portion 28 is provided.
Is opened, and the position is set to a position apart from the waveguide open end 24.

【０２３９】高圧反応ガス供給スリット２０に高圧反応
ガス供給装置Ｒから高圧反応ガス供給経路１を通じて高
圧反応ガスを供給し、高圧反応ガス供給スリット２０か
ら、高圧反応ガスを噴出させるのである。更に被加工物
対向部分２８にあって、且つ高圧反応ガス供給スリット
２０と導波管開放端２４とに挟まれた位置に反応生成物
排気経路３を通じて排気装置Ｅに接続され、プラズマ中
の反応によって発生した反応生成物を排気する反応生成
物排気口４を設ける。The high-pressure reactant gas is supplied from the high-pressure reactant gas supply device R to the high-pressure reactant gas supply slit 20 through the high-pressure reactant gas supply path 1, and the high-pressure reactant gas supply slit 20 ejects the high-pressure reactant gas. Further, the reaction device is connected to the exhaust device E through the reaction product exhaust path 3 at a position between the high pressure reactant gas supply slit 20 and the waveguide open end 24 in the workpiece facing portion 28 and reacts in the plasma. A reaction product exhaust port 4 for exhausting the reaction product generated by the reaction is provided.

【０２４０】図１８Ａ及び図１８Ｂに示されるように、
反応生成物排気口４及び導波管開放端２４はその形状を
幅の広いスリット状とし、スリット２０及び反応生成物
排気口４及び導波管開放端２４は互いに平行関係になる
様に設置する。As shown in FIGS. 18A and 18B,
The reaction product exhaust port 4 and the waveguide open end 24 are formed in a wide slit shape, and the slit 20, the reaction product exhaust port 4 and the waveguide open end 24 are arranged in parallel with each other. .

【０２４１】（上記高圧浮上電極Ｈ３の浮上方式）次
に高圧浮上電極Ｈ３の浮上方式について図１６及び図１
７に基づいて述べる。図１７に示されるように高圧浮上
電極Ｈ３を被加工物Ｊを固定した凹状被加工物固定用試
料台Ｔ２の凹部に両者を非接触状態に保ったままはめ
る。高圧反応ガス供給装置Ｒより、高圧反応ガス供給経
路１を通じて高圧ガス供給スリット２０より高圧反応ガ
スを噴出させることにより、高圧反応ガスと反応容器Ｃ
内の気体雰囲気との差圧により、高圧浮上電極Ｈ３を被
加工物Ｊに対して微小間隔Ｄだけ浮上させる。(Floating method of high-voltage floating electrode H3) Next, the floating method of the high-voltage floating electrode H3 will be described with reference to FIGS.
7 will be described. As shown in FIG. 17, the high-pressure floating electrode H3 is fitted into the concave portion of the concave work piece fixing sample stand T2 on which the work piece J is fixed, while keeping both in a non-contact state. The high-pressure reactant gas is ejected from the high-pressure reactant gas supply device R through the high-pressure reactant gas supply slit 1 through the high-pressure reactant gas supply slit 20, so that the high-pressure reactant gas and the reaction vessel C
The high-pressure floating electrode H3 is floated with respect to the workpiece J by a small interval D due to the pressure difference from the gas atmosphere in the inside.

【０２４２】従って凹状被加工物固定用試料台Ｔ２及び
被加工物Ｊと高圧浮上電極Ｈ３の被加工物対向部分２８
は非接触を保つ。更に凹状被加工物固定用試料台Ｔ２の
内側凹部側面６３と内側凹部側面６３に対向する高圧浮
上電極Ｈ３の側面６２とは高精度に平坦化されている。Accordingly, the concave work piece fixing sample stage T2, the work piece J, and the work facing portion 28 of the high-voltage floating electrode H3.
Keeps out of contact. Furthermore, the inner concave side surface 63 of the concave workpiece fixing sample stage T2 and the side surface 62 of the high-voltage floating electrode H3 facing the inner concave side surface 63 are flattened with high precision.

【０２４３】更に凹状被加工物固定用試料台Ｔ２の幅Ｑ
２は、高圧浮上電極Ｈ３の幅Ｑ１より僅かに大きく、図
示しない高圧気体供給装置より高圧気体供給経路２６を
通じて高圧気体供給口２５より高圧気体を噴出させるこ
とにより、凹状被加工物固定用試料台Ｔ２の内側凹部側
面６３と内側凹部側面６３に対向する高圧浮上電極Ｈ３
の側面６２とは非接触を保ち、更に高圧浮上電極Ｈ３の
運動方向を一定方向に限定するのである。Further, the width Q of the sample stage T2 for fixing the concave workpiece is set.
2 is slightly larger than the width Q1 of the high-pressure floating electrode H3, and a high-pressure gas supply device (not shown) ejects a high-pressure gas from a high-pressure gas supply port 25 through a high-pressure gas supply path 26 to thereby provide a concave work piece fixing sample table. The inner concave side surface 63 of T2 and the high-voltage floating electrode H3 facing the inner concave side surface 63
Is kept out of contact with the side surface 62, and the direction of movement of the high-voltage floating electrode H3 is limited to a certain direction.

【０２４４】つまり、導波管を電力伝送線路として用い
た電極浮上型高圧浮上電極Ｈ３の浮上方法については、
電力伝送線路として電極内導波管２２を採用しただけで
ある為、その浮上方式は前述した電極浮上型高圧浮上電
極Ｈ１と同じく、高圧反応ガス供給スリット２０より供
給された反応ガスの高圧力Ｐ０と、排気装置Ｅによって
排気された反応容器Ｃ内の低圧若しくは真空雰囲気圧力
Ｐ１との差圧によって微小間隔Ｄだけ浮上するのであ
る。That is, with respect to the floating method of the electrode floating type high-voltage floating electrode H3 using the waveguide as the power transmission line,
Since only the in-electrode waveguide 22 is employed as the power transmission line, the levitation method is the same as that of the above-mentioned electrode levitation type high-pressure levitation electrode H1, and the high pressure P0 of the reaction gas supplied from the high pressure reaction gas supply slit 20 is used. And the pressure difference between the low pressure in the reaction vessel C or the vacuum atmosphere pressure P1 evacuated by the evacuating device E, and floats by the minute interval D.

【０２４５】高圧反応ガス供給口をスリット状にし、更
に供給スリット２０及び反応生成物排気口４を互いに平
行関係になる様設置する事により、供給スリット２０か
ら反応ガス排気口４へ向かう高圧反応ガスの流れにおい
て、スリット２０の長手方向の流速分布を均一化させる
事ができる。流速分布を均一化させる事により、導波管
開放端２４に発生する局所領域プラズマＰにおける加工
速度分布を均一化させる事が出来るのである。By forming the high pressure reaction gas supply port into a slit shape and further providing the supply slit 20 and the reaction product exhaust port 4 in a parallel relationship with each other, the high pressure reaction gas from the supply slit 20 toward the reaction gas exhaust port 4 is formed. In the flow, the flow velocity distribution in the longitudinal direction of the slit 20 can be made uniform. By making the flow velocity distribution uniform, the processing velocity distribution in the local region plasma P generated at the waveguide open end 24 can be made uniform.

【０２４６】（上記高圧浮上電極Ｈ３の加工方式）次
に電極浮上型高圧浮上電極Ｈ３の加工方式について図１
６、１７、１８Ａ、および１８Ｂに基づいて述べる。(Processing method of the high-voltage floating electrode H3) Next, a processing method of the electrode floating type high-voltage floating electrode H3 will be described with reference to FIG.
This will be described based on 6, 17, 18A, and 18B.

【０２４７】マイクロ波電源Ｇ１より発生したマイクロ
波電力は、共振・整合装置Ｍとフレキシブル導波管２
１、更に電極内導波管２２を通じて高圧浮上電極Ｈ３の
被加工物対向部２８に設けられた導波管開放端２４に達
する。The microwave power generated from the microwave power source G 1 is supplied to the resonance / matching device M and the flexible waveguide 2.
1. Further, it reaches the waveguide open end 24 provided in the workpiece facing portion 28 of the high-voltage floating electrode H3 through the in-electrode waveguide 22.

【０２４８】導波管開放端２４に達したマイクロ波電力
は、高圧浮上電極Ｈ３と被加工物Ｊとの間の微小間隔Ｄ
中の高圧反応ガスに向かって放射され、高圧反応ガスは
解離し、反応ガスに基づく局所領域プラズマＰを発生さ
せるのである。[0248] The microwave power that has reached the waveguide open end 24 is applied to the minute gap D between the high-voltage floating electrode H3 and the workpiece J.
The high-pressure reaction gas is emitted toward the inside high-pressure reaction gas, and the high-pressure reaction gas dissociates to generate a local region plasma P based on the reaction gas.

【０２４９】更に、局所領域プラズマＰ中に発生した反
応ガスに基づく活性種と被加工物Ｊとが化学反応し、被
加工物原子が揮発性物質に変化する事によって局所領域
プラズマＰ直下の加工を行う。Further, the active species based on the reaction gas generated in the local region plasma P chemically reacts with the workpiece J, and the workpiece atoms are changed into volatile substances, whereby the processing directly below the local region plasma P is performed. I do.

【０２５０】ここで、導波管２２の断面形状はマイクロ
波電源Ｇ１の周波数と、目的とする被加工物Ｊの加工特
性、加工領域とにより決定される。Here, the cross-sectional shape of the waveguide 22 is determined by the frequency of the microwave power source G1, the processing characteristics of the target workpiece J, and the processing area.

【０２５１】更に、高圧反応ガス供給スリット２０より
供給された反応ガスは、反応容器Ｃ内の低圧若しくは真
空雰囲気、及び反応ガス排気口４へ、高圧浮上電極Ｈ３
の浮上によって形成された高圧浮上電極Ｈ３と被加工物
Ｊとの間の微小間隔Ｄ中を被加工物表面に沿った流れ２
７となって移動する。Further, the reaction gas supplied from the high-pressure reaction gas supply slit 20 is supplied to the low-pressure or vacuum atmosphere in the reaction vessel C and the reaction gas exhaust port 4 by the high-pressure floating electrode H3.
Flow along the surface of the workpiece in the minute interval D between the high-pressure floating electrode H3 formed by the floating of the workpiece and the workpiece J
7 and move.

【０２５２】また、導波管を用いた電力伝送線路の導波
管開放端２４を、被加工物対向部２８中で、且つスリッ
ト２０と反応ガス排気口４とに挟まれ、更に高圧反応ガ
ス供給スリット２０より離れた位置に設ける事によっ
て、高圧反応ガスの被加工物表面に沿った流れの中の局
所領域プラズマＰを実現する。このため、図７を用いて
説明した被加工物浮上型高圧浮上電極Ｈ１の平坦化効果
と同様に、被加工物Ｊの表面を平坦化することができる
のである。Also, the waveguide open end 24 of the power transmission line using the waveguide is sandwiched between the slit 20 and the reaction gas exhaust port 4 in the workpiece facing portion 28, and By providing the plasma at a position away from the supply slit 20, a local region plasma P in the flow of the high-pressure reaction gas along the surface of the workpiece is realized. Therefore, the surface of the workpiece J can be flattened in the same manner as the flattening effect of the workpiece floating high-voltage floating electrode H1 described with reference to FIG.

【０２５３】（導波管を電力電送線路に用いる事の効
果）ここで、前述した高圧浮上電極Ｈ１及びＨ２のよう
な内側電極５と外側電極６とを用いて電力伝送線路を構
成する実施の形態においては、電源Ｇにマイクロ波電源
Ｇ１のみでなく、直流からマイクロ波電源まで、全ての
周波数を用いることができる。(Effect of Using Waveguide for Power Transmission Line) Here, an embodiment in which a power transmission line is formed using the inner electrode 5 and the outer electrode 6 such as the high-voltage floating electrodes H1 and H2 described above. In the embodiment, not only the microwave power source G1 but also all frequencies from DC to microwave power source can be used as the power source G.

【０２５４】しかし、内側電極５と外側電極６との間を
絶縁し、また内側電極５と外側電極６とによって囲まれ
る電力伝送部分と上記電極−被加工物間の微小間隔Ｄ中
の反応ガス雰囲気との分離を行う為の絶縁体１１は、内
側電極外径および外側電極内径に対して隙間なく取り付
けられていることが必要である。その場合、発生した局
所領域プラズマＰから発生する熱によって内側電極５及
び外側電極６が熱変形し、特に内側電極５の熱膨張によ
って絶縁体１１の破損を引き起こすおそれが存在する。However, the inner electrode 5 and the outer electrode 6 are insulated from each other, and the reaction gas in the minute space D between the power transmission portion surrounded by the inner electrode 5 and the outer electrode 6 and the electrode-workpiece. It is necessary that the insulator 11 for separating from the atmosphere is attached without gaps to the inner electrode outer diameter and the outer electrode inner diameter. In this case, the inner electrode 5 and the outer electrode 6 are thermally deformed by the heat generated from the generated local region plasma P, and there is a possibility that the insulator 11 may be damaged particularly by the thermal expansion of the inner electrode 5.

【０２５５】従って、外側電極６と内側電極５との冷却
を行うが、この様な構造体である高圧浮上電極Ｈ１，Ｈ
２を製作し、更に高圧浮上電極Ｈ１、Ｈ２の全体を均等
に冷却する機構を設ける事は非常に困難である。Accordingly, the outer electrode 6 and the inner electrode 5 are cooled, and the high-voltage floating electrodes H1, H
It is very difficult to manufacture the high pressure floating electrodes H1 and H2 and to provide a mechanism for uniformly cooling the entire high pressure floating electrodes H1 and H2.

【０２５６】しかし、実施の形態３においては、電力伝
送線路に導波管を用いることにより、電圧印可する内側
電極５と、電界を閉じ込める外側電力の６との区別がな
いので、マイクロ波を伝播させる場合において、高圧浮
上電極内部の電力伝送線路製作を容易にし、また、電極
内冷却経路製作を容易にする。However, in the third embodiment, since a waveguide is used for the power transmission line, there is no distinction between the inner electrode 5 for applying a voltage and the outer power 6 for confining an electric field, and therefore, the microwave is propagated. In this case, the power transmission line inside the high-voltage floating electrode is easily manufactured, and the cooling path inside the electrode is easily manufactured.

【０２５７】更に金属構造体が絶縁体２３を取り組む構
造となる為、金属の熱膨張係数と絶縁体の熱膨張係数で
は金属の熱膨張係数の方が一般的に大きい事から上記金
属構造体の熱膨張による絶縁体２３の破損が起こりにく
いのである。Further, since the metal structure has a structure involving the insulator 23, the thermal expansion coefficient of the metal is generally larger than the thermal expansion coefficient of the insulator. The insulator 23 is unlikely to be damaged by thermal expansion.

【０２５８】（上記電源Ｇにマイクロ波電源を用いる
事の効果）また、電源Ｇにマイクロ波電源Ｇ１を用いる
事により、得られる効果について図１９及び表２に基づ
いて説明する。(Effects of Using Microwave Power Supply for Power Supply G) The effects obtained by using the microwave power supply G1 for the power supply G will be described with reference to FIG. 19 and Table 2.

【０２５９】[0259]

【表２】 [Table 2]

【０２６０】表２は、最大電界強度Ｅ０、周波数ｆで周
期的に変化する振動電界Ｅ＝Ｅ０ｓｉｎ（２πｆｔ）
（但しｔは時間）中において、真空中で、各種荷電粒子
（電荷量ｅ、質量ｍ）が振動電界Ｅ中で振動する時の振
動振幅Ｌ＝（ｅＥ０／４ｍπ2ｆ2）の値を示した表であ
り、また、図１９は、上記荷電粒子の上記振動電界によ
る振動振幅Ｌを示す概念図である。Table 2 shows that the oscillating electric field E = E0 sin (2πft) periodically changing with the maximum electric field intensity E0 and the frequency f.
During (where t is time), a value of the vibration amplitude L = (eE0 / 4mπ 2 f 2 ) when various charged particles (charge amount e, mass m) vibrate in the vibration electric field E in a vacuum. FIG. 19 is a conceptual diagram showing a vibration amplitude L of the charged particles due to the vibration electric field.

【０２６１】図中の２９は、荷電粒子である。表２に示
されるように、振動振幅Ｌは、周波数ｆを向上させるに
従って小さくなる。[0261] Reference numeral 29 in the figure denotes charged particles. As shown in Table 2, the vibration amplitude L decreases as the frequency f increases.

【０２６２】微小間隔Ｄは１μｍから数百μｍ程度の狭
ギャップである為、局所領域プラズマＰを発生させる電
源Ｇに、周波数が高々１ＭＨｚである高周波電源を用い
る場合、振動振幅ＬはＨｅイオンで０．６０７〔ｍ〕と
なり、非常に大きくなる。このため、荷電粒子を上記狭
ギャップ中に捕捉する事が出来ず、荷電粒子が被加工物
表面に衝突し、被加工物表面に損傷を与えることにな
る。Since the minute interval D is a narrow gap of about 1 μm to several hundred μm, when a high frequency power supply having a frequency of at most 1 MHz is used as the power supply G for generating the local region plasma P, the vibration amplitude L is He ions. 0.607 [m], which is very large. For this reason, charged particles cannot be trapped in the narrow gap, and the charged particles collide with the surface of the workpiece to damage the surface of the workpiece.

【０２６３】しかし、電極−被加工物の微小間隔Ｄが数
百μｍ程度の時、局所領域プラズマＰを発生させる電源
に、最低１０ＭＨｚ以上の高周波を用い、また微小間隔
Ｄが数十μｍ程度の時、周波数１ＧＨｚ以上のマイクロ
波を用いる事により、上記荷電粒子を上記電極−被加工
物間の微小間隔Ｄ中に捕捉する事が出来、被加工物表面
に損傷を与えない低損傷な加工を実現する事が出来るの
である。However, when the minute interval D between the electrode and the workpiece is about several hundred μm, a high frequency of at least 10 MHz is used as a power source for generating the local region plasma P, and the minute interval D is about several tens μm. At this time, by using a microwave having a frequency of 1 GHz or more, the charged particles can be trapped in the minute interval D between the electrode and the workpiece, thereby performing low-damage processing that does not damage the workpiece surface. It can be realized.

【０２６４】図１７に示されるように、被加工物Ｊと高
圧浮上電極Ｈ３との相対的な移動は、凹状被加工物固定
用試料台Ｔ２の内側底部に被加工物Ｊを被加工物固定部
Ｆによって固定し、また前述したように凹状被加工物固
定用試料台Ｔ２の内側側面６３に設置された高圧気体供
給口２５より噴出した高圧気体によりエアスライド的に
摺導部を用いる事無く非接触に高圧浮上電極Ｈ３の走査
方向を被加工物Ｊに水平な方向のみに限定し、更に被加
工物Ｊに水平な方向の走査は高圧浮上電極Ｈ３に接続さ
れた走査ワイヤー若しくはベルト９を図示しない駆動モ
ーター１０に接続し上記駆動モーターを回転させる事に
よって行うのである。As shown in FIG. 17, the relative movement between the workpiece J and the high-voltage floating electrode H3 is achieved by fixing the workpiece J to the inner bottom of the concave workpiece holding sample base T2. Without using the sliding portion in an air-sliding manner by the high-pressure gas ejected from the high-pressure gas supply port 25 installed on the inner side surface 63 of the concave workpiece fixing sample stand T2 as described above. The scanning direction of the high-voltage floating electrode H3 is limited to the direction parallel to the workpiece J in a non-contact manner, and the scanning in the direction parallel to the workpiece J is performed by using a scanning wire or belt 9 connected to the high-voltage floating electrode H3. This is performed by connecting to a drive motor 10 (not shown) and rotating the drive motor.

【０２６５】また、高圧気体供給口２５より噴出させる
高圧気体は被加工物Ｊの加工に用いる高圧反応ガスに限
定せず、絶縁性の高いガス、また、希ガス、また空気
等、目的に応じて変化させる。The high-pressure gas ejected from the high-pressure gas supply port 25 is not limited to the high-pressure reaction gas used for processing the workpiece J, but may be a highly insulating gas, a rare gas, air, or the like. To change.

【０２６６】（実施の形態４）次に図２０Ａ、２０Ｂ、
および２０Ｃに基づいて説明する。図２０Ａは、導波管
を電力伝送線路に用いた被加工物浮上型高圧浮上電極の
断面図である。図２０Ｂは、導波管を電力伝送線路に用
いた被加工物浮上型高圧浮上電極の正面図である。図２
０Ｃは、導波管を電力伝送線路に用いた被加工物浮上型
高圧浮上電極の上面図である。(Embodiment 4) Next, FIGS.
And will be described based on 20C. FIG. 20A is a cross-sectional view of a workpiece floating type high-voltage floating electrode using a waveguide as a power transmission line. FIG. 20B is a front view of a workpiece floating type high-voltage floating electrode using a waveguide as a power transmission line. FIG.
0C is a top view of a workpiece floating type high-voltage floating electrode using a waveguide as a power transmission line.

【０２６７】また図中、Ｈ４は、導波管を電力伝送線路
に用いた被加工物浮上型高圧浮上電極である。３０は、
突起のついた浮上被加工物送りベルトである。３１は、
送りベルトの突起である。３２は、浮上被加工物送りモ
ーターである。In the figure, H4 is a workpiece floating type high voltage floating electrode using a waveguide as a power transmission line. 30 is
This is a floating workpiece feed belt with projections. 31 is
It is a projection of the feed belt. 32 is a floating workpiece feed motor.

【０２６８】電力伝送線路に用いた被加工物浮上型高圧
浮上電極Ｈ４は、上記導波管によってマイクロ波を伝達
し、被加工物浮上型高圧浮上電極Ｈ４の被加工物対向部
に設けられた導波管開放端２４において局所高圧プラズ
マＰを発生させる。局所高圧プラズマＰは、微小間隔Ｄ
中に供給された高圧反応ガスを分解し、高圧反応ガスに
基づく活性種を発生し、被加工物原子と化学反応させ、
揮発性物質に変化させることによって浮上被加工物Ａの
加工を行う。The workpiece floating type high-voltage floating electrode H4 used for the power transmission line transmits microwaves through the above-mentioned waveguide, and is provided at the workpiece facing portion of the workpiece floating type high-voltage floating electrode H4. A local high-pressure plasma P is generated at the waveguide open end 24. The local high-pressure plasma P has a small interval D
Decomposes the high-pressure reaction gas supplied inside, generates active species based on the high-pressure reaction gas, and chemically reacts with the workpiece atoms,
The floating workpiece A is processed by changing to a volatile substance.

【０２６９】更に被加工物浮上型高圧浮上電極Ｈ４と被
加工物Ａとの間の微小間隔Ｄ中の高圧反応ガスの被加工
物表面に沿った流れによる表面平坦化効果により、浮上
被加工物Ａの平坦化及び平滑化を行うものである。Further, due to the surface flattening effect due to the flow of the high-pressure reaction gas along the surface of the workpiece in the minute interval D between the workpiece floating type high-pressure floating electrode H4 and the workpiece A, the floating workpiece is A is to be flattened and smoothed.

【０２７０】被加工物浮上型高圧浮上電極Ｈ４によれ
ば、被加工物浮上型高圧浮上電極Ｈ２と同様に、電極浮
上型高圧浮上電極Ｈ１及び図１４の被加工物浮上型高圧
浮上電極における被加工物Ｊ及びＡのチャッキング時間
を省略する事が出来、流れ作業的に加工、被加工物搬送
を行う事により、プロセスの生産性を更に向上させる事
が出来る。According to the workpiece floating type high-voltage floating electrode H4, similarly to the workpiece floating type high-voltage floating electrode H2, the workpiece floating type high-voltage floating electrode H1 and the workpiece floating type high-voltage floating electrode shown in FIG. The chucking time of the workpieces J and A can be omitted, and the productivity of the process can be further improved by performing the processing and the transport of the workpiece in a flow operation.

【０２７１】導波管を電力伝送線路に用いた被加工物浮
上型高圧浮上電極Ｈ４を用いた加工装置において、図２
０Ａ、２０Ｂ、図２０Ｃ中に図示しない加工装置全体の
構成、上記浮上被加工物の浮上原理、プラズマ発生方
式、局所プラズマ中における加工現象、および高加工速
度及び被加工物の加工表面の清浄化を同時に実現する原
理及び方式については、前述した電極浮上型高圧浮上電
極Ｈ１と同様に、被加工物浮上型高圧浮上電極Ｈ４に対
して適用できる。In a processing apparatus using a workpiece floating type high-voltage floating electrode H4 using a waveguide as a power transmission line, FIG.
0A, 20B, the configuration of the entire processing apparatus not shown in FIG. 20C, the floating principle of the floating workpiece, the plasma generation method, the processing phenomenon in local plasma, the high processing speed, and the cleaning of the processing surface of the workpiece. Can be applied to the workpiece floating-type high-voltage floating electrode H4, similarly to the electrode floating-type high-voltage floating electrode H1 described above.

【０２７２】また、図示しないが、図１４のように被加
工物固定用試料台に上記被加工物を固定し、被加工物固
定用試料台と共に被加工物を浮上させる方式を実施する
事も可能である。Although not shown, it is also possible to implement a method in which the workpiece is fixed on the workpiece holder for fixing the workpiece as shown in FIG. 14 and the workpiece is lifted together with the workpiece holder for fixing the workpiece. It is possible.

【０２７３】また浮上加工物の走査は、図２０Ｃに示す
ような両端を浮上被加工物送りモーター３２によって拘
束・回転される突起のついた浮上被加工物送りベルト３
０によって、突起部分３１で被加工物を固定し、両端の
モーター３２を回転させる事によって被加工物を一定方
向に送る若しくは往復走査させる機構を用いる事も出来
る。The scanning of the floating workpiece is performed by a floating workpiece feeding belt 3 having projections whose both ends are restrained and rotated by a floating workpiece feeding motor 32 as shown in FIG. 20C.
With 0, a mechanism for fixing the workpiece at the protruding portion 31 and rotating the motors 32 at both ends to feed the workpiece in a certain direction or reciprocally scan can be used.

【０２７４】（実施の形態５）図２１に基づいて本発明
の実施の形態５について説明する。図２１は、被加工物
仕上げ形状が球面である被加工物の表面平滑化、及び形
状加工を行なう高圧浮上電極の部分断面図である。(Fifth Embodiment) A fifth embodiment of the present invention will be described with reference to FIG. FIG. 21 is a partial cross-sectional view of a high-voltage floating electrode that performs surface smoothing and shape processing of a workpiece whose finished shape is a spherical surface.

【０２７５】図２１中、Ｈ５は、被加工物対向部に球面
形状をもつ高圧浮上電極である。Ｔ３は、球面被加工物
固定用試料台である。Ｂは、被加工物仕上げ面形状が球
面である被加工物である。６０は、球面被加工物固定用
試料台Ｔ３の電極対向面である。６１は、高圧浮上電極
Ｈ５の被加工物対向部分である。In FIG. 21, reference numeral H5 denotes a high-voltage floating electrode having a spherical shape at the portion facing the workpiece. T3 is a sample stage for fixing a spherical workpiece. B is a workpiece whose workpiece finished surface shape is a spherical surface. Reference numeral 60 denotes an electrode-facing surface of the spherical workpiece fixing sample stand T3. Reference numeral 61 denotes a portion of the high-voltage floating electrode H5 facing the workpiece.

【０２７６】被加工物仕上げ面形状が球面である被加工
物Ｂの表面平滑化、及び形状加工を行なう場合、球面被
加工物固定用試料台Ｔ３の電極対向面６０を球面とし、
その半径を被加工物の仕上げ面形状の球面半径に一致さ
せ、被加工物Ｂの加工球面が被加工物固定用試料台Ｔ３
の電極対向面６０の球面に段差なく重なる様設置する。In the case of performing the surface smoothing and the shape processing of the workpiece B whose finished surface shape is spherical, the electrode-facing surface 60 of the sample holder T3 for fixing the spherical workpiece is spherical.
The radius is made equal to the spherical radius of the finished surface shape of the workpiece, and the workpiece spherical surface of the workpiece B is set to the workpiece fixing sample table T3.
Is arranged so as to overlap with the spherical surface of the electrode facing surface 60 without any step.

【０２７７】一方、高圧浮上電極Ｈ５の被加工物対向部
分６１の形状を同じく球状としその半径を被加工物Ｂの
球面半径と同じ若しくはそれ以上とする。高圧浮上電極
Ｈ５の被加工物対向部分６１と被加工物Ｂの球面を対向
させ、多孔質材料１９を用いた高圧反応ガス供給口より
供給した高圧反応ガスと上記反応容器内の低圧及び真空
雰囲気との差圧により高圧浮上電極Ｈ５を被加工物Ｂの
表面より、微小間隔Ｄだけ浮上させるのである。On the other hand, the workpiece facing portion 61 of the high-voltage floating electrode H5 has the same spherical shape, and its radius is equal to or larger than the spherical radius of the workpiece B. The workpiece facing portion 61 of the high-pressure floating electrode H5 faces the spherical surface of the workpiece B, and the high-pressure reaction gas supplied from the high-pressure reaction gas supply port using the porous material 19 and the low-pressure and vacuum atmosphere in the reaction vessel. Then, the high-pressure floating electrode H5 is floated from the surface of the workpiece B by a small distance D by the pressure difference between the high-frequency floating electrode H5 and the workpiece B.

【０２７８】また図示しないが、同様に高圧反応ガス供
給口より供給した高圧反応ガスと上記反応応器内の低圧
及び真空雰囲気との差圧により被加工物Ｂを高圧浮上電
極Ｈ５より、微小間隔Ｄだけ浮上させる事も可能であ
る。Although not shown, the workpiece B is similarly moved from the high-pressure floating electrode H5 by a differential pressure between the high-pressure reactant gas supplied from the high-pressure reactant gas supply port and the low-pressure and vacuum atmosphere in the reactor. It is also possible to float only D.

【０２７９】またプラズマの発生は、高圧浮上電極Ｈ１
と同様に高圧浮上電極Ｈ５の被加工物対向面に設置した
電力伝送線路開放端７に図示しない電源Ｇより発生した
直流もしくは交流電圧を伝達し、上記高圧反応ガスの供
給された高圧浮上電極Ｈ５と被加工物Ｂとの間の微小間
隔Ｄに強電界を発生させる事によって局所領域プラズマ
Ｐを発生させ、上記反応ガスに基づく活性種によって被
加工物Ｂの加工を行なうのである。[0279] The plasma is generated by the high-voltage floating electrode H1.
Similarly, the DC or AC voltage generated from the power supply G (not shown) is transmitted to the open end 7 of the power transmission line installed on the workpiece facing surface of the high-pressure floating electrode H5, and the high-pressure floating electrode H5 to which the high-pressure reactant gas is supplied. By generating a strong electric field in a minute interval D between the workpiece and the workpiece B, a local region plasma P is generated, and the workpiece B is processed by active species based on the reaction gas.

【０２８０】図２１の実施の形態５においては、電力伝
送線路は内側電極５、外側電極６によって構成される電
力伝送線路によって、電源Ｇより発生した直流若しくは
交流を上記電力伝送線路開放端７しいては局所領域プラ
ズマＰまで伝達している例を説明したが、本発明はこれ
に限定されない。電源Ｇがマイクロ波電源である場合
は、前述した図１６のように、導波管を用いてマイクロ
波を伝達させ、図１８Ａ中の被加工物対向部分２８を高
圧浮上電極Ｈ５の被加工物対向部分６１に示されるよう
な球面とし、同様に被加工物と対向する部分に設置した
導波管開放端に強電界を発生させ、局所領域プラズマＰ
を発生させ、球面被加工物Ｂを加工する方式を行なう事
も可能である。In the fifth embodiment shown in FIG. 21, the power transmission line is constituted by the inner electrode 5 and the outer electrode 6, and direct current or alternating current generated from the power supply G is supplied to the open end 7 of the power transmission line. In the above, an example in which transmission is performed to the local region plasma P has been described, but the present invention is not limited to this. When the power source G is a microwave power source, as shown in FIG. 16 described above, microwaves are transmitted using a waveguide, and the workpiece facing portion 28 in FIG. A strong electric field is generated at the open end of the waveguide, which is also provided at a portion facing the workpiece, as shown in the facing portion 61, and the local region plasma P
And a method of processing the spherical workpiece B can be performed.

【０２８１】さらに、電極浮上型高圧浮上電極Ｈ１、被
加工物浮上型高圧浮上電極Ｈ２，Ｈ３、導波管をマイク
ロ波伝送線路として用いた高圧浮上電極Ｈ４で示した上
記高圧反応ガス供給口形状及び位置、上記反応生成物排
気口形状及び位置、上記マイクロ波開放端形状及び位
置、上記高圧浮上電極形状及び被加工物対向部耐蝕・高
硬度絶縁膜形成及び被加工物対向部耐蝕・高硬度絶縁材
料設置、上記被加工物固定用試料台、および上記被加工
物固定部等は、被加工物仕上げ面形状が球面である場合
の高圧浮上電極Ｈ５にも適用する事が出来る。Further, the shape of the high-pressure reactant gas supply port indicated by the electrode floating type high-pressure floating electrode H1, the workpiece floating type high-pressure floating electrode H2, H3, and the high-pressure floating electrode H4 using a waveguide as a microwave transmission line. And position, the shape and position of the reaction product exhaust port, the shape and position of the microwave open end, the shape of the high-voltage floating electrode, the corrosion-resistant and high-hardness insulating film formed on the workpiece facing portion, and the corrosion-resistant and high hardness of the workpiece facing portion The installation of insulating material, the sample stage for fixing the workpiece, and the fixing portion of the workpiece can also be applied to the high-voltage floating electrode H5 in the case where the finished surface shape of the workpiece is spherical.

【０２８２】[0282]

【発明の効果】以上のように本発明によれば、反応容器
内に電力を印加する加工用電極を被加工物と対向させて
配置し、電力を印加しプラズマを発生させ、プラズマ発
生部のみを高圧力に維持する事により、被加工物表面を
高能率に加工することができる。As described above, according to the present invention, a processing electrode for applying electric power is disposed in a reaction vessel so as to face a workpiece, and a plasma is generated by applying electric power. By maintaining a high pressure, the surface of the workpiece can be processed with high efficiency.

【０２８３】また本発明によれば、同時に反応容器内部
を少なくともプラズマ発生部より低圧に、若しくは真空
に維持する事により、反応生成物が凝縮、被加工物表面
に再付着する事なく清浄に加工することができる。According to the present invention, by simultaneously maintaining the inside of the reaction vessel at a pressure lower than that of the plasma generating portion or at a vacuum, the reaction product can be processed cleanly without condensing and re-adhering to the surface of the workpiece. can do.

【０２８４】さらに本発明によれば、プラズマ発生領域
を加工用電極−被加工物間隔の反応ガス供給口近傍の反
応ガス噴出する領域外の領域であって、反応ガスの被加
工物表面に沿った流れが形成される領域中のみに限定す
る事により、加工後の研磨ピッチを形成する事なく、更
にエッチバック平坦化法に用いられるようなレジスト膜
を用いること無く、被加工物の表面の微小凸部をプラズ
マを用いたドライプロセスによって平滑化、平坦化する
ことができるものである。Further, according to the present invention, the plasma generation region is a region outside the region where the reactant gas is blown out near the reactant gas supply port at the interval between the working electrode and the work, and is located along the surface of the work with the reactant gas. By restricting only to the region where the flow is formed, without forming a polishing pitch after processing, and further without using a resist film used in the etch-back planarization method, the surface of the workpiece is The minute projections can be smoothed and flattened by a dry process using plasma.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の加工装置の全体概念図である。FIG. 1 is an overall conceptual diagram of a processing apparatus of the present invention.

【図２】電極浮上型高圧浮上電極Ｈ１の断面図である。FIG. 2 is a sectional view of an electrode floating type high-voltage floating electrode H1.

【図３】電極浮上型高圧浮上電極Ｈ１の被加工物対向部
分を表した下方斜面図である。FIG. 3 is a lower oblique view showing a portion of the electrode floating type high-voltage floating electrode H1 facing the workpiece.

【図４】被加工物Ｊと被加工物固定用試料台Ｔの段差ｔ
を示す部分断面図である。FIG. 4 shows a step t between the workpiece J and the sample stage T for fixing the workpiece.
FIG.

【図５】電極浮上型高圧浮上電極Ｈ１−被加工物Ｊ間の
微小間隔Ｄ中の高圧反応ガスの圧力分布を示す模式図で
ある。FIG. 5 is a schematic diagram showing a pressure distribution of a high-pressure reaction gas in a minute interval D between an electrode floating type high-pressure floating electrode H1 and a workpiece J.

【図６】電極浮上型高圧力浮上電極Ｈ１の被加工物Ｊと
対向する部分に設けられた電力伝送線路開放端における
局所領域プラズマＰの発生を示す概略図である。FIG. 6 is a schematic diagram showing generation of a local region plasma P at an open end of a power transmission line provided at a portion of an electrode levitation type high pressure levitation electrode H1 facing a workpiece J;

【図７】局所領域プラズマＰ中の高圧反応ガスの被加工
物表面に沿った流れによる平坦化効果を示す概念図であ
る。FIG. 7 is a conceptual diagram showing a flattening effect due to a flow of a high-pressure reaction gas in a local region plasma P along a workpiece surface.

【図８Ａ】高圧反応ガス供給口を含む近傍に上記局所領
域プラズマＰを発生させる場合に上記供給口直下に形成
される加工量分布を示す断面図である。FIG. 8A is a cross-sectional view showing a processing amount distribution formed immediately below the supply port when the local region plasma P is generated in the vicinity including the high-pressure reaction gas supply port.

【図８Ｂ】高圧反応ガス供給口から離れた位置に上記電
力伝送線路開放端を設置し、上記局所領域プラズマＰを
発生させる場合に上記局所領域プラズマＰ直下に形成さ
れる加工量分布を示す断面図である。FIG. 8B is a cross-sectional view showing a processing amount distribution formed immediately below the local region plasma P when the power transmission line open end is installed at a position away from the high pressure reaction gas supply port and the local region plasma P is generated. FIG.

【図９】高精度平坦化耐蝕・高硬度絶縁体を被加工物対
向部分に用いた電極浮上型高圧浮上電極の断面図であ
る。FIG. 9 is a cross-sectional view of an electrode floating type high-voltage floating electrode using a highly accurate flattening corrosion-resistant and high-hardness insulator in a portion facing a workpiece;

【図１０】高圧反応ガス供給口に多孔質材料を用いた電
極浮上型高圧浮上電極の断面図である。FIG. 10 is a sectional view of an electrode floating type high pressure floating electrode using a porous material for a high pressure reaction gas supply port.

【図１１】被加工物固定用試料台Ｔに高圧反応ガス供給
口を設置した電極浮上型高圧浮上電極の断面図である。FIG. 11 is a sectional view of an electrode-floating high-pressure electrode in which a high-pressure reaction gas supply port is provided on a sample stage T for fixing a workpiece;

【図１２】多回転軸、回転数をもつ被加工物固定用試料
台Ｔ１００Ｄを用いたバッチ処理を示す概略図である。FIG. 12 is a schematic diagram showing a batch process using a sample stage T100D for fixing a workpiece having multiple rotation axes and rotation speeds.

【図１３】被加工物浮上型高圧浮上電極Ｈ２の概略断面
図である。FIG. 13 is a schematic sectional view of a workpiece floating type high-voltage floating electrode H2.

【図１４】被加工物固定用試料台Ｔに高圧反応ガス供給
口を設置した被加工物浮上型高圧浮上電極Ｈ２Ａの断面
図である。FIG. 14 is a cross-sectional view of a workpiece floating-type high-pressure floating electrode H2A in which a high-pressure reaction gas supply port is provided on a workpiece holder T for fixing a workpiece.

【図１５】被加工物のみを浮上させた被加工物浮上型高
圧浮上電極Ｈ２の概略断面図である。FIG. 15 is a schematic sectional view of a workpiece floating type high-voltage floating electrode H2 in which only the workpiece is floated.

【図１６】導波管を電力伝送線路に用いた電極浮上型高
圧浮上電極Ｈ３の断面図である。FIG. 16 is a cross-sectional view of an electrode floating type high-voltage floating electrode H3 using a waveguide as a power transmission line.

【図１７】導波管を電力伝送線路に用いた電極浮上型高
圧浮上電極Ｈ３を別の方向より見た部分断面図である。FIG. 17 is a partial sectional view of an electrode floating type high-voltage floating electrode H3 using a waveguide as a power transmission line when viewed from another direction.

【図１８Ａ】導波管を電力伝送線路に用いた電極浮上型
高圧浮上電極Ｈ３自体の下方斜面図である。FIG. 18A is a lower oblique view of an electrode floating type high-voltage floating electrode H3 itself using a waveguide as a power transmission line.

【図１８Ｂ】導波管を電力伝送線路に用いた電極浮上型
高圧浮上電極Ｈ３自体の上方斜面図である。FIG. 18B is a top oblique view of the electrode floating type high-voltage floating electrode H3 itself using a waveguide as a power transmission line.

【図１９】荷電粒子の振動電界による振動振幅Ｌを示す
概念図である。FIG. 19 is a conceptual diagram showing a vibration amplitude L of a charged particle due to a vibration electric field.

【図２０Ａ】導波管を電力伝送線路に用いた被加工物浮
上型高圧浮上電極Ｈ４の断面図である。FIG. 20A is a sectional view of a workpiece floating type high-voltage floating electrode H4 using a waveguide as a power transmission line.

【図２０Ｂ】導波管を電力伝送線路に用いた被加工物浮
上型高圧浮上電極Ｈ４の正面図である。FIG. 20B is a front view of a workpiece floating type high-voltage floating electrode H4 using a waveguide as a power transmission line.

【図２０Ｃ】導波管を電力伝送線路に用いた被加工物浮
上型高圧浮上電極Ｈ４の上面図であるFIG. 20C is a top view of a workpiece floating type high-voltage floating electrode H4 using a waveguide as a power transmission line.

【図２１】被加工物仕上げ形状が球面である被加工物の
表面平滑化、及び形状加工を行う高圧浮上電極Ｈ５の部
分断面図である。FIG. 21 is a partial cross-sectional view of a high-voltage floating electrode H5 that performs surface smoothing and shape processing of a workpiece whose finished shape is a spherical surface.

【図２２Ａ】ＣＶＭを用いた従来技術の第１例の断面図
である。FIG. 22A is a sectional view of a first example of the related art using a CVM.

【図２２Ｂ】ＣＶＭを用いた従来技術の第２例の断面図
である。FIG. 22B is a sectional view of a second example of the related art using a CVM.

【図２３】反応ガス噴出口直下に形成されると考えられ
る加工痕の断面図である。FIG. 23 is a cross-sectional view of a processing mark considered to be formed immediately below a reaction gas outlet.

【図２４】加工後表面に付着した大粒径パーティクルに
よるその後の成膜後の非成膜部分を示す斜方図である。FIG. 24 is an oblique view showing a non-film-formed portion after a subsequent film is formed by large-diameter particles adhering to the processed surface.

【図２５Ａ】円板Ｈ０による低コンダクタンスな気体流
路の形成を示す概略図である。FIG. 25A is a schematic view showing the formation of a low-conductance gas flow path by a disc H0.

【図２５Ｂ】円板Ｈ０と被加工物Ｊとの間に円筒座標軸
を設定した図である。FIG. 25B is a diagram in which a cylindrical coordinate axis is set between the disk H0 and the workpiece J.

【符号の説明】[Explanation of symbols]

Ａ 浮上被加工物 Ｂ 被加工物仕上げ面形状が球面である被加工物 Ｃ 反応容器 Ｃ０ 気体流路のコンダクタンス Ｄ 微小間隔 Ｅ０ 積分定数 Ｅ 排気装置 Ｆ 被加工物固定部 Ｆ０ 積分定数 Ｇ 電源 Ｇ１ マイクロ波電源 Ｈ０ 円板 Ｈ１ 電極浮上型高圧浮上電極 Ｈ１Ａ 高精度平坦化耐蝕・高硬度絶縁体を被加工物対
向部分に用いた電極浮上型高圧浮上電極 Ｈ１Ｂ 多孔質材料を高圧反応ガス供給口に用いた電極
浮上型高圧浮上電極 Ｈ１Ｃ 被加工物固定用試料台Ｔに高圧反応ガス供給口
を設置した電極浮上型高圧浮上電極 Ｈ２ 被加工物浮上型高圧浮上電極 Ｈ３ 導波管を電力伝送線路に用いた電極浮上型高圧浮
上電極 Ｈ４ 導波管を電力伝送線路に用いた被加工物浮上型高
圧浮上電極 Ｈ５ 被加工物対向部に球面形状を持つ高圧浮上電極 Ｉ フレキシブル電力伝送線路 Ｊ 被加工物 Ｋ 電力伝送線路 Ｌ 荷電粒子の振動電界による振動振幅 ｍ 気体の分子量 Ｍ 共振・整合装置 Ｎ 制御装置 Ｐ０ 高圧反応ガス供給口部の圧力 ｐ 円板Ｈ０−被加工物Ｊ間の圧力分布 Ｐ 局所領域高圧プラズマ ｐ０ 円板Ｈ０周囲の気体圧力 ｐｓ 円板Ｈ０へ供給する高圧気体の圧力 Ｏ 座標系の原点 Ｐ１ 反応容器内の気体圧力 Ｐ２ 反応ガス排気口部の圧力 Ｑ１ 高圧浮上電極Ｈ３の幅 Ｑ２ 凹状被加工物固定用試料台Ｔ２の幅 ｒ 円筒座標系のｒ軸 Ｒ０ 気体定数 Ｒ 高圧反応ガス供給装置 Ｒ１ 円板Ｈ０の内半径 Ｒ２ 円板Ｈ０の外半径 Ｓ 走査ステージ Ｔ０ 絶対温度 Ｔ 被加工物固定用試料台 Ｔ１ 円板Ｈ０の厚さ Ｔ１００Ｄ 被加工物多数固定用試料台 Ｔ２ 凹状被加工物固定用試料台 Ｔ３ 球面被加工物固定用試料台 ｔ 被加工物Ｊと被加工物固定用試料台Ｔの段差 ｔ０ 円板Ｈ０−被加工物Ｊ間のギャップ Ｕ 高圧浮上電極走査装置 ｖｒ 円板Ｈ０−被加工物Ｊ間のｒ方向の流速 ｗ 円板Ｈ０−被加工物Ｊ間を流れる気体の重量流量 Ｘ１ 高圧反応ガスに基づく活性種 Ｘ２ 被加工物原子 Ｙ 浮上被加工物走査ワイヤー Ｙ１ 浮上被加工物拘束走査機構 ｚ 円筒座標系のｚ軸 θ０ 円筒座標系の回転角 θ 被加工物固定用試料台Ｔの持つ回転機構 θ１ 被加工物多数固定用試料台Ｔ１００Ｄの持つ回転
機構 μ 気体の粘性係数 ρ 気体の密度 １ 高圧反応ガス供給経路 １Ｂ バッファ部 ２ 高圧力反応ガス供給口 ３ 反応生成物排気経路 ４ 反応ガス排気口 ５ 内側電極 ６ 外側電極 ７ 電力伝送線路開放端 ８ コネクタ ９ 走査ワイヤー若しくはベルト １０ 駆動モーター １１ 絶縁体 １２ 電極浮上型高圧浮上電極Ｈ１の被加工物対向部分 １３ 高圧反応ガスの被加工物表面に沿った流れ １４ 被加工物表面の微小凸部 １５ 被加工物表面の微小凹部 １６Ａ 高圧反応ガス噴出口２から噴出する高圧反応ガ
ス噴出流 １６Ｂ 微小間隔Ｄ中で、被加工物表面に沿う流れとな
った高圧反応ガス流 １７Ａ 高圧反応ガス噴出口２を含む近傍に上記局所領
域プラズマを発生させる場合に上記噴出口直下に形成さ
れる加工量分布 １７Ｂ 高圧反応ガス供給口から離れた位置に上記電力
伝送線路開放端７を設置し、上記局所領域プラズマＰを
発生させる場合に上記局所領域プラズマＰ直下に形成さ
れる加工量分布 １８ 高精度平坦化耐蝕・高硬度絶縁体 １９ 多孔質金属若しくは多孔質絶縁体材料 ２０ 高圧反応ガス供給スリット ２１ フレキシブル導波管 ２２ 電極内導波管 ２３ 絶縁体 ２４ 導波管開放端 ２５ 高圧気体供給口 ２６ 高圧気体供給経路 ２７ 被加工物の表面に沿った流れ ２８ 導波管を電力伝送線路に用いた電極浮上型高圧力
浮上電極Ｈ３の被加工物対向部分 ２９ 荷電粒子 ３０ 突起のついた浮上被加工物送りベルト ３１ 送りベルトの突起 ３２ 浮上被加工物送りモーター ４１ 加工用電極 ４２ 被加工物 ４２Ｓ 被加工物表面 ４３ 高周波電力供給装置 ４４ 反応容器 ４５ 反応ガス供給手段 ４６ 反応ガス排出手段 ４７ 被加工物走査試料台 ４８Ａ 反応ガス噴出口Ａ ４８Ｂ 反応ガス噴出口Ｂ ４９Ａ 局所領域プラズマＡ ４９Ｂ 局所領域プラズマＢ ５０ 反応ガス噴出流 ５１ 絶縁体 ５２ 外部電極 ５３ 内部電極 ５４ 加工量分布 ５５ 大粒径雰囲気パーティクル ５６ 成膜 ５７ 被加工物の加工後表面 ５８ 雰囲気パーティクル上に成膜された膜 ６０ 球面被加工物固定用試料台Ｔ３の電極対向面 ６１ 高圧浮上電極Ｈ５の被加工物対向部分 ６２ 高圧浮上電極Ｈ３の側面 ６３ 凹状被加工物固定用試料台Ｔ２の内側凹部側面 １００ 電極浮上型高圧浮上電極Ｈ１を用いた超精密加
工装置 １００Ａ 高精度平坦化耐蝕・高硬度絶縁体を被加工物
対向部分に用いた電極浮上型高圧浮上電極Ｈ１Ａを用い
た超精密加工装置 １００Ｂ 多孔質材料を高圧反応ガス供給口に用いた電
極浮上型高圧浮上電極Ｈ１Ｂを用いた超精密加工装置 １００Ｃ 被加工物固定用試料台に高圧反応ガス供給口
を設置した電極浮上型高圧浮上電極Ｈ１Ｃを用いた超精
密加工装置 １００Ｄ 被加工物多数固定用試料台Ｔ１００Ｄを用い
たバッチ処理を行う超精密加工装置 １０１ 高圧気体供給路 ２００ 被加工物浮上型高圧浮上電極Ｈ２を用いた超精
密加工装置 ２００Ａ 被加工物固定用試料台に高圧反応ガス供給口
を設置した被加工物浮上型高圧浮上電極Ｈ２Ａを用いた
超精密加工装置 ２００Ｂ 浮上被加工物Ａのみを浮上させる超精密加工
装置 ３００ 導波管を電力伝送線路に用いた高圧浮上電極Ｈ
３を用いた超精密加工装置 ４００ 導波管を電力伝送線路に用いた被加工物浮上型
高圧浮上電極Ｈ４を用いた超精密加工装置 ５００ 被加工物対向部に球面形状を持つ高圧浮上電極
Ｈ５を用いた超精密加工装置 Ｈ２Ａ 被加工物固定用試料台に高圧反応ガス供給口を
設置した被加工物浮上型高圧浮上電極 ２２００Ａ プラズマＣＶＭによる超精密加工装置 ２２００Ｂ プラズマＣＶＭによる超精密加工装置Reference Signs List A Floating workpiece B Workpiece whose finished surface shape is spherical C Reaction vessel C0 Conductance of gas flow path D Minute interval E0 Integral constant E Exhaust device F Workpiece fixing part F0 Integral constant G Power supply G1 Micro Wave power supply H0 Disc H1 Electrode levitation type high pressure levitation electrode H1A High precision flattening Electrode levitation type high pressure levitation electrode H1B using corrosion resistant and high hardness insulator on the part facing the workpiece H1B Use porous material for high pressure reaction gas supply port Electrode levitation type high pressure levitation electrode H1C Electrode levitation type high pressure levitation electrode H2 in which high pressure reaction gas supply port is installed on workpiece holder T for workpiece fixation Workpiece high pressure levitation electrode H3 Waveguide used for power transmission line Electrode levitation type high voltage levitation electrode H4 Workpiece levitation type high voltage levitation electrode using a waveguide as a power transmission line H5 High pressure levitation electrode having a spherical shape on the facing part of the workpiece I Flexible Bull power transmission line J Workpiece K Power transmission line L Vibration amplitude of charged particles due to vibration electric field m Gas molecular weight M Resonance / matching device N Controller P0 Pressure at high pressure reaction gas supply port p Disc H0-Workpiece Pressure distribution between J P Local high-pressure plasma p0 Gas pressure around disk H0 p Pressure of high-pressure gas supplied to disk H0 O Origin of coordinate system P1 Gas pressure in reaction vessel P2 Pressure at reaction gas exhaust port Q1 Width of the high-pressure floating electrode H3 Q2 Width of the sample stage T2 for fixing the concave workpiece r r-axis of the cylindrical coordinate system R0 Gas constant R High-pressure reactant gas supply device R1 Inner radius of the disc H0 R2 Outer radius of the disc H0 S scanning Stage T0 Absolute temperature T Sample holder for fixing workpiece T1 Thickness of disc H0 T100D Sample holder for fixing many workpieces T2 Sample holder for fixing concave workpiece T3 For fixing spherical workpiece Work table t Step between the workpiece J and the workpiece table T for fixing the workpiece t0 Gap between the disc H0 and the workpiece J U High-voltage floating electrode scanning device vr In the r direction between the disc H0 and the workpiece J Flow velocity w Weight flow rate of gas flowing between the disc H0 and the workpiece J X1 Activated species based on high-pressure reactive gas X2 Workpiece atom Y Floating workpiece scanning wire Y1 Floating workpiece constraint scanning mechanism z Cylindrical coordinate system z-axis θ0 Rotational angle of cylindrical coordinate system θ Rotation mechanism of sample stage T for fixing workpieces θ1 Rotation mechanism of sample stage T100D for fixing many workpieces μ Viscosity coefficient of gas ρ Gas density 1 High-pressure reactant gas supply Path 1B Buffer section 2 High-pressure reaction gas supply port 3 Reaction product exhaust path 4 Reaction gas exhaust port 5 Inner electrode 6 Outer electrode 7 Power transmission line open end 8 Connector 9 Scanning wire or belt 10 Drive motor -11 Insulator 12 Workpiece-facing part of electrode floating type high-voltage floating electrode H1 13 Flow of high-pressure reaction gas along the surface of work piece 14 Micro-convexity on work-piece surface 15 Micro-depression on work-piece surface 16A High pressure The high-pressure reaction gas ejected from the reaction gas outlet 2 16B A high-pressure reaction gas flow 17A that flows along the surface of the workpiece in the minute interval D 17A A processing amount distribution 17B formed immediately below the jet port when generating the gas. 17B The power transmission line open end 7 is installed at a position distant from the high-pressure reactant gas supply port to generate the local area plasma P. Processing amount distribution formed immediately below plasma P 18 High precision flattening Corrosion-resistant and high-hardness insulator 19 Porous metal or porous insulator material 20 High-pressure reactant gas supply slit DESCRIPTION OF SYMBOLS 21 Flexible waveguide 22 In-electrode waveguide 23 Insulator 24 Waveguide open end 25 High-pressure gas supply port 26 High-pressure gas supply path 27 Flow along the surface of a workpiece 28 Waveguide is used as a power transmission line Workpiece facing portion of the electrode floating type high-pressure floating electrode H3 29 Charged particles 30 Floating workpiece feeding belt with projections 31 Feeding belt projections 32 Floating workpiece feeding motor 41 Working electrode 42 Workpiece 42S Workpiece surface 43 High-frequency power supply device 44 Reaction vessel 45 Reaction gas supply means 46 Reaction gas discharge means 47 Workpiece scanning sample table 48A Reaction gas outlet A 48B Reaction gas outlet B 49A Local area plasma A 49B Local area plasma B 50 Reactive gas ejection flow 51 Insulator 52 External electrode 53 Internal electrode 54 Processing amount distribution 55 Large particle size atmosphere par Vehicle 56 Film formation 57 Surface after processing of work piece 58 Film formed on atmosphere particles 60 Electrode facing surface of spherical work piece fixing sample stand T3 61 Workpiece facing portion of high-voltage floating electrode H5 62 High-pressure floating Side surface of electrode H3 63 Inner concave side surface of concave work piece fixing sample stage T2 100 Ultra-precision processing device using electrode floating type high-voltage floating electrode H1 100A High precision flattening Corrosion resistant and high hardness insulator facing workpiece Ultra-precision processing device using electrode floating type high-pressure floating electrode H1A 100B Ultra-precision processing device using electrode floating type high-pressure floating electrode H1B using porous material for high-pressure reactant gas supply port 100C For fixing workpiece An ultra-precision processing device using an electrode floating type high pressure floating electrode H1C in which a high pressure reaction gas supply port is installed on the sample stage. 100D Using a sample stage T100D for fixing a large number of workpieces. Ultra-precision processing device for performing batch processing 101 High-pressure gas supply path 200 Ultra-precision processing device using workpiece floating type high-pressure floating electrode H2 200A Processing with high-pressure reaction gas supply port installed on sample base for fixing workpiece Ultra-precision processing device using object floating type high-pressure floating electrode H2A 200B Ultra-precision processing device for floating only floating workpiece A 300 High-voltage floating electrode H using waveguide as power transmission line
3 Ultra-precision machining apparatus using a waveguide 400 as a power transmission line Ultra-precision machining apparatus using a workpiece floating type high-voltage floating electrode H4 500 A high-pressure floating electrode H5 having a spherical shape at a portion facing the workpiece. Ultra-precision processing device using H2A Workpiece floating type high-pressure floating electrode with a high-pressure reaction gas supply port installed on the sample stage for workpiece fixing 2200A Ultra-precision processing device with plasma CVM 2200B Ultra-precision processing device with plasma CVM

───────────────────────────────────────────────────── フロントページの続き (72)発明者 奥田 徹 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 (72)発明者 森 勇▲蔵▼ 大阪府交野市私市８丁目16番19号 Ｆターム(参考） 4K057 DA04 DA20 DB08 DB20 DD01 DE06 DE14 DG12 DM08 DM29 DM40 DN01 5F004 AA11 BA20 BB11 BB13 BB14 BB18 BB28 BD07 DA00 DA22 DB00 DB01 DB08 DB10 EB02 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toru Okuda 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Isamu Mori ▲ kura ▼ 8--16 private city, Katano-shi, Osaka No. 19 F term (reference) 4K057 DA04 DA20 DB08 DB20 DD01 DE06 DE14 DG12 DM08 DM29 DM40 DN01 5F004 AA11 BA20 BB11 BB13 BB14 BB18 BB28 BD07 DA00 DA22 DB00 DB01 DB08 DB10 EB02

Claims (22)

【特許請求の範囲】[Claims] 【請求項１】 第１の反応ガス雰囲気中に配された被加
工物をプラズマを用いて加工する精密加工方法であっ
て、 反応ガスの低コンダクタンスな流路が構成されるよう
に、前記被加工物に対向する壁面が形成され、 前記反応ガスを前記低コンダクタンスな流路へ供給し
て、第２の反応ガス雰囲気を前記低コンダクタンスな流
路に局所的に形成する第１ステップと、 前記第２の反応ガス雰囲気中で前記プラズマを発生させ
る第２ステップと、 前記プラズマにより前記第２の反応ガス雰囲気中の前記
反応ガスを活性化して活性種を生成する第３ステップ
と、 前記活性種と前記被加工物とを化学反応させて反応生成
物を生成し、前記反応生成物を気化させて前記被加工物
を加工する第４ステップとを包含するプラズマによる精
密加工方法。1. A precision processing method for processing a workpiece disposed in a first reaction gas atmosphere by using plasma, wherein the processing is performed so that a low conductance flow path of the reaction gas is formed. A first step of forming a wall surface facing a workpiece, supplying the reaction gas to the low conductance flow path, and locally forming a second reaction gas atmosphere in the low conductance flow path; A second step of generating the plasma in a second reaction gas atmosphere; a third step of activating the reaction gas in the second reaction gas atmosphere with the plasma to generate an active species; And a process of chemically reacting the workpiece with the workpiece to generate a reaction product, and vaporizing the reaction product to process the workpiece. 【請求項２】 前記第２の反応ガス雰囲気中で発生した
前記プラズマ部の全ての圧力が、前記第１の反応ガス雰
囲気の圧力よりも大きい、請求項１記載のプラズマによ
る精密加工方法。2. The precision processing method using plasma according to claim 1, wherein all the pressures of the plasma section generated in the second reaction gas atmosphere are higher than the pressure of the first reaction gas atmosphere. 【請求項３】 前記第１の反応ガス雰囲気の圧力は、少
なくとも１気圧以下である、請求項２記載のプラズマに
よる精密加工方法。3. The precision processing method according to claim 2, wherein the pressure of the first reaction gas atmosphere is at least 1 atm or less. 【請求項４】 前記壁面は、前記被加工物を加工する加
工用電極に形成され、 前記第２ステップは、前記加工用電極に電力を印加する
ステップを含む、請求項１記載のプラズマによる精密加
工方法。4. The precision by plasma according to claim 1, wherein the wall surface is formed on a processing electrode for processing the workpiece, and the second step includes a step of applying power to the processing electrode. Processing method. 【請求項５】 前記電力は、周波数１０ＭＨｚ以上１Ｇ
Ｈｚ以下の高周波電力を含む、請求項４記載のプラズマ
による精密加工方法。5. The electric power has a frequency of 10 MHz or more and 1 G or more.
5. The precision processing method using plasma according to claim 4, which includes a high-frequency power of less than or equal to Hz. 【請求項６】 前記電力は、周波数１ＧＨｚ以上のマイ
クロ波電力を含む、請求項４記載のプラズマによる精密
加工方法。6. The precision processing method using plasma according to claim 4, wherein the power includes microwave power having a frequency of 1 GHz or more. 【請求項７】 第１の反応ガス雰囲気中に配された被加
工物をプラズマを用いて加工する精密加工装置であっ
て、 前記プラズマを発生するプラズマ発生手段を備え、 前記プラズマ発生手段には反応ガスの低コンダクタンス
な流路が構成されるように、前記被加工物に対向する壁
面が形成され、 前記反応ガスは前記低コンダクタンスな流路へ供給さ
れ、前記第１の反応ガス雰囲気の第１圧力よりも大きい
第２圧力を有する第２の反応ガス雰囲気を前記低コンダ
クタンスな流路に局所的に形成し、前記プラズマ発生手
段は前記第２の反応ガス雰囲気中で前記プラズマを発生
させ、前記プラズマは前記第２の反応ガス雰囲気中の前
記反応ガスを活性化して活性種を生成し、前記活性種と
前記被加工物とが化学反応して反応生成物を生成し、前
記反応生成物を気化させるように前記被加工物を加工
し、 前記プラズマ発生手段は、前記第２の反応ガス雰囲気中
で発生した前記プラズマ部の全ての圧力が、前記第１の
反応ガス雰囲気の圧力よりも大きい精密加工装置。7. A precision processing apparatus for processing a workpiece disposed in a first reaction gas atmosphere using plasma, comprising: a plasma generating means for generating the plasma; A wall surface facing the workpiece is formed so that a low-conductance flow path of the reaction gas is formed, and the reaction gas is supplied to the low-conductance flow path, and a first reaction gas atmosphere of the first reaction gas atmosphere is formed. Forming a second reaction gas atmosphere having a second pressure greater than 1 pressure locally in the low-conductance flow path, wherein the plasma generation means generates the plasma in the second reaction gas atmosphere; The plasma activates the reaction gas in the second reaction gas atmosphere to generate an active species, and the active species and the workpiece chemically react to generate a reaction product. The workpiece is processed so as to vaporize a product, and the plasma generating means is configured such that all pressures of the plasma part generated in the second reaction gas atmosphere are equal to the pressure of the first reaction gas atmosphere. Precision processing equipment larger than. 【請求項８】 前記プラズマ発生手段は、前記被加工物
と対向して設けられる加工用電極と、前記加工用電極に
電力を印加する電源とを含み、 前記加工用電極は、前記電源から印加される電力により
前記第２の反応ガス雰囲気中で前記プラズマを発生させ
る、請求項７記載の精密加工装置。8. The plasma generating means includes: a processing electrode provided to face the workpiece; and a power supply for applying power to the processing electrode, wherein the processing electrode is supplied from the power supply. The precision processing apparatus according to claim 7, wherein the plasma is generated in the second reaction gas atmosphere by the supplied electric power. 【請求項９】 前記加工用電極は、前記被加工物に対応
する形状を有し、 前記加工用電極には、前記反応ガスを前記低コンダクタ
ンスな流路へ供給する反応ガス供給口が形成される、請
求項８記載の精密加工装置。9. The processing electrode has a shape corresponding to the workpiece, and the processing electrode has a reaction gas supply port for supplying the reaction gas to the low conductance flow path. The precision processing apparatus according to claim 8, wherein 【請求項１０】 前記被加工物は、被加工物固定手段に
固定され、 前記被加工物固定手段は、被加工物固定用試料台を含
み、 前記被加工物固定用試料台には、前記反応ガスを前記低
コンダクタンスな流路へ供給する反応ガス供給口が形成
され、 前記被加工物固定用試料台は、前記被加工物に対応する
形状を有する、請求項８記載の精密加工装置。10. The work piece is fixed to a work piece fixing means, the work piece fixing means includes a work piece fixing sample table, and the work piece fixing sample table has The precision processing apparatus according to claim 8, wherein a reaction gas supply port for supplying a reaction gas to the low conductance flow path is formed, and the workpiece holder for fixing the workpiece has a shape corresponding to the workpiece. 【請求項１１】 前記加工用電極は、前記被加工物に対
して微小間隔をおいて設置する事により前記低コンダク
タンスな流路を形成する、請求項８記載のプラズマによ
る精密加工装置。11. The precision processing apparatus according to claim 8, wherein the processing electrode forms the low-conductance flow path by being disposed at a minute interval with respect to the workpiece. 【請求項１２】 前記第１圧力と前記第２圧力との差圧
は、前記加工用電極を前記被加工物に対して、若しくは
前記被加工物を前記加工用電極に対して微小間隔をおい
て浮上させる、請求項８記載の精密加工装置。12. The pressure difference between the first pressure and the second pressure is set at a small interval between the processing electrode and the processing object or between the processing object and the processing electrode. The precision processing apparatus according to claim 8, wherein the precision processing apparatus is caused to float. 【請求項１３】 前記加工用電極と被加工物固定用試料
台との少なくとも一方は更に、磁力を発生する磁力発生
機構を有し、 前記磁力発生機構が発生する前記磁力は、前記加工用電
極を前記被加工物に対して、若しくは前記被加工物を前
記加工用電極に対して微小間隔をおいて浮上させる、請
求項８記載の精密加工装置。13. At least one of the processing electrode and the workpiece holder for fixing a workpiece further includes a magnetic force generating mechanism for generating a magnetic force, wherein the magnetic force generated by the magnetic force generating mechanism is the processing electrode. 9. The precision processing apparatus according to claim 8, wherein the workpiece is floated at a small interval from the workpiece or the workpiece from the processing electrode. 【請求項１４】 前記加工用電極は、前記電源から前記
電力が印加される電力伝送線路を有し、 前記電力伝送線路は、前記被加工物と対向する位置に設
けられる電力伝送線路開放端を有し、 前記加工用電極に印加された前記電力は、前記電力伝送
線路開放端まで伝送され、前記電力伝送線路開放端にお
いて高電界を発生させる事により前記プラズマを発生さ
せる、請求項８記載の精密加工装置。14. The processing electrode has a power transmission line to which the power is applied from the power source, and the power transmission line has a power transmission line open end provided at a position facing the workpiece. 9. The method according to claim 8, wherein the power applied to the processing electrode is transmitted to an open end of the power transmission line, and the plasma is generated by generating a high electric field at the open end of the power transmission line. Precision processing equipment. 【請求項１５】 前記電力伝送線路は、前記電源から印
加される前記電力を前記電力伝送線路開放端まで伝送す
る内側導体と、 アースに接続され前記内側導体を覆う電界遮蔽導体と、 前記内側導体と前記電界遮蔽導体とを絶縁する絶縁体と
によって構成される、請求項１４記載の精密加工装置。15. The power transmission line, an inner conductor for transmitting the power applied from the power supply to an open end of the power transmission line, an electric field shielding conductor connected to ground and covering the inner conductor, and the inner conductor. The precision processing apparatus according to claim 14, comprising an insulator that insulates the electric field shielding conductor from the electric field shielding conductor. 【請求項１６】 前記加工用電極の前記電力伝送線路開
放端は、好ましくない加工量分布が形成されないように
前記反応ガス供給口から十分離れた位置に設けられる、
請求項１４記載の精密加工装置。16. The power transmission line open end of the processing electrode is provided at a position sufficiently distant from the reaction gas supply port so that an undesired processing amount distribution is not formed.
The precision processing device according to claim 14. 【請求項１７】 前記電力伝送線路は、前記電力を前記
電力伝送線路開放端まで伝送する導波管を含む、請求項
１４記載の精密加工装置。17. The precision processing apparatus according to claim 14, wherein the power transmission line includes a waveguide that transmits the power to an open end of the power transmission line. 【請求項１８】 前記精密加工装置は、前記被加工物の
表面全体が加工されるように、前記被加工物と前記加工
用電極とを相対移動させる移動手段をさらに含む、請求
項８記載の精密加工装置。18. The apparatus according to claim 8, wherein the precision processing apparatus further includes a moving unit that relatively moves the workpiece and the processing electrode so that the entire surface of the workpiece is processed. Precision processing equipment. 【請求項１９】 前記加工用電極と前記被加工物固定用
試料台との少なくともいずれか一方には更に、前記反応
生成物を排気する反応ガス排気口を有し、 前記精密加工装置は、前記反応ガス排気口からの前記反
応生成物を前記精密加工装置の外部に排気する排出処理
機構をさらに備える、請求項８記載の精密加工装置。19. At least one of the processing electrode and the workpiece-fixing sample stage further includes a reaction gas exhaust port for exhausting the reaction product. The precision processing apparatus according to claim 8, further comprising a discharge processing mechanism configured to discharge the reaction product from a reaction gas exhaust port to the outside of the precision processing apparatus. 【請求項２０】 前記排出処理機構は、前記反応生成物
を処理し、 前記精密加工装置は、前記排出処理機構により処理され
た前記反応生成物を反応ガスとして前記低コンダクタン
スな流路へ再供給する循環機構をさらに備える、請求項
８記載の精密加工装置。20. The discharge processing mechanism processes the reaction product, and the precision processing device resupplies the reaction product processed by the discharge processing mechanism as a reaction gas to the low-conductance flow path. The precision processing apparatus according to claim 8, further comprising a circulating mechanism that performs the operation. 【請求項２１】 前記被加工物の表面には、微小凸部が
形成され、 前記被加工物表面形状に対して相似形状を含む形状を持
つ前記加工用電極を前記被加工物に対向させ、 前記加工用電極−被加工物間の高圧力部から、前記電極
周囲の前記第１の反応ガス雰囲気若しくは前記反応ガス
排気口へ向かう被加工物表面に沿う流れ中において局所
的なプラズマを発生させ、 該プラズマによって生じた前記反応ガスに基づく前記活
性種が、前記被加工物表面に沿う流れにより前記被加工
物表面の微小凸部を選択的に除去する事により前記表面
を平滑化する、請求項８記載のプラズマによる精密加工
装置。21. A minute convex portion is formed on the surface of the workpiece, and the processing electrode having a shape including a similar shape to the surface shape of the workpiece is opposed to the workpiece, A local plasma is generated from a high-pressure portion between the processing electrode and the workpiece in a flow along the workpiece surface toward the first reaction gas atmosphere or the reaction gas exhaust port around the electrode. The active species based on the reaction gas generated by the plasma smoothes the surface by selectively removing minute projections on the surface of the workpiece by a flow along the surface of the workpiece. Item 10. A precision processing apparatus using plasma according to Item 8. 【請求項２２】 前記精密加工装置は、前記第１の反応
ガス雰囲気を維持する反応容器をさらに備える、請求項
８記載の精密加工装置。22. The precision processing apparatus according to claim 8, wherein the precision processing apparatus further includes a reaction vessel for maintaining the first reaction gas atmosphere.
JP11219348A 1999-08-02 1999-08-02 Ultra precise processing method by plasma and device thereof Withdrawn JP2001044180A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259484A (en) * 2003-02-24 2004-09-16 Sharp Corp Plasma processing unit
JP2006120739A (en) * 2004-10-19 2006-05-11 Sekisui Chem Co Ltd Method of treating surface of substrate with transparent electrode formed thereon and display device
KR100935144B1 (en) * 2006-12-20 2010-01-06 세이코 엡슨 가부시키가이샤 Plasma processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259484A (en) * 2003-02-24 2004-09-16 Sharp Corp Plasma processing unit
JP2006120739A (en) * 2004-10-19 2006-05-11 Sekisui Chem Co Ltd Method of treating surface of substrate with transparent electrode formed thereon and display device
KR100935144B1 (en) * 2006-12-20 2010-01-06 세이코 엡슨 가부시키가이샤 Plasma processing apparatus

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