JP2001035697A - Plasma generator - Google Patents
Plasma generatorInfo
- Publication number
- JP2001035697A JP2001035697A JP11212238A JP21223899A JP2001035697A JP 2001035697 A JP2001035697 A JP 2001035697A JP 11212238 A JP11212238 A JP 11212238A JP 21223899 A JP21223899 A JP 21223899A JP 2001035697 A JP2001035697 A JP 2001035697A
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- plasma
- plasma generator
- vacuum vessel
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、アンテナに高周波
電流を供給して高周波電界を発生させ、その電界により
プラズマを発生して、基板面にエッチングや薄膜形成等
の表面処理を行うプラズマ処理装置に有用なプラズマ発
生装置に関わり、特に液晶用ガラス基板等の大面積基板
を処理するのに適するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for generating a high-frequency electric field by supplying a high-frequency current to an antenna, generating plasma by the electric field, and performing a surface treatment such as etching or thin film formation on a substrate surface. The present invention relates to a plasma generator useful for the above, and is particularly suitable for processing a large-area substrate such as a glass substrate for liquid crystal.
【０００２】[0002]
【従来の技術】半導体デバイスや液晶ディスプレイの製
造工程で使用されるドライエッチング装置やアッシング
装置、プラズマＣＶＤ装置等のプラズマを用いた処理装
置の分野においては、近年の処理基板の大型化に伴い、
処理装置のプラズマ源も大口径化が要求されている。ま
た、一方では、エッチングレートや成膜速度、スループ
ットを確保するため、高真空下でのプラズマの高密度化
が要求されている。2. Description of the Related Art In the field of processing equipment using plasma such as dry etching equipment, ashing equipment, and plasma CVD equipment used in the manufacturing process of semiconductor devices and liquid crystal displays, with the recent increase in the size of processing substrates,
The plasma source of the processing apparatus is also required to have a large diameter. On the other hand, in order to secure an etching rate, a film forming rate, and a throughput, it is required to increase the density of plasma under a high vacuum.
【０００３】このうち、プラズマの高密度化に関して
は、プラズマの励起効率を促進するために、高周波を用
いて誘導結合プラズマ（Inductively Coupled Plasma、
以下ＩＣＰと略称）を発生させる方法が採用されてい
る。ＩＣＰは主としてアンテナ励起用コイルに高周波電
流を流し、これによって真空中に誘導電磁界を発生さ
せ、プラズマを生成するものであり、高真空下において
高密度プラズマを均一に生成することができる。[0003] Among these, with regard to increasing the density of plasma, in order to promote the efficiency of exciting the plasma, inductively coupled plasma (Inductively Coupled Plasma,
(Hereinafter abbreviated as ICP). In the ICP, a high-frequency current is mainly passed through an antenna excitation coil to generate an induction electromagnetic field in a vacuum, thereby generating a plasma. In the ICP, a high-density plasma can be uniformly generated under a high vacuum.
【０００４】従来のＩＣＰを用いたプラズマ処理装置の
１例を図１２に示す。図１２において、２１は基板のエ
ッチング処理等を行なう真空容器（プロセスチャンバ
ー）、２２は真空容器の一部に設けられた石英等の絶縁
体隔壁、２３は絶縁体隔壁２２の大気側の壁面に沿って
ループ状あるいはスパイラル状に設けられた１ターン以
上の巻数を有する周回形状の高周波アンテナ、２４は高
周波アンテナに高周波電力を供給する高周波電源、２５
は排気口、２６は放電プラズマが生成される放電室、２
７は基板電極である。FIG. 12 shows an example of a conventional plasma processing apparatus using ICP. 12, reference numeral 21 denotes a vacuum chamber (process chamber) for performing an etching process on a substrate, etc., 22 denotes an insulating partition wall made of quartz or the like provided in a part of the vacuum chamber, and 23 denotes a wall of the insulating partition wall 22 on the atmosphere side. A high-frequency power supply for supplying high-frequency power to the high-frequency antenna; 25 a high-frequency power supply for supplying high-frequency power to the high-frequency antenna;
Denotes an exhaust port, 26 denotes a discharge chamber in which discharge plasma is generated, 2
7 is a substrate electrode.
【０００５】しかし、図１２の従来方式では、放電室２
６の径を４００ｍｍφ以上に大口径化しようとすれば、
大気圧下にある外気と高真空下にある放電室内との圧力
差に抗するのに必要となる機械的強度を得るために、絶
縁体隔壁２２の肉厚を１０〜３０ｍｍもの厚みにしなく
てはならず、このため高周波アンテナ２３から放射され
る誘導電界強度は、アンテナから遠くなるに従って指数
関数的に減少して放電効率が悪くなり、アンテナ２３の
インダクタンスが大きくなってアンテナに発生する高周
波電圧が高くなってしまうこと等の問題があった。However, in the conventional system shown in FIG.
If you try to increase the diameter of 6 to 400 mmφ or more,
In order to obtain the mechanical strength required to withstand the pressure difference between the outside air under atmospheric pressure and the discharge chamber under high vacuum, the thickness of the insulating partition wall 22 need not be as large as 10 to 30 mm. Therefore, the intensity of the induced electric field radiated from the high-frequency antenna 23 decreases exponentially as the distance from the antenna increases, the discharge efficiency decreases, the inductance of the antenna 23 increases, and the high-frequency voltage generated in the antenna increases. However, there is a problem that the height is increased.
【０００６】一方、このように放電室の側面を周回させ
るようにアンテナを設ける代わりに、真空容器の放電室
上面を絶縁体の天板にして、その外側にアンテナを設置
する方式もあった。しかしこの方式では、現状での放電
室径が３００ｍｍφのものの天板の絶縁体の厚みが２０
ｍｍ程度であるのに対し、放電室径を４００ｍｍφ以上
に大口径化しようとした場合には、機械的強度を確保す
るために３０〜５０ｍｍもの厚みが必要となるという問
題があった。On the other hand, instead of providing the antenna so as to go around the side surface of the discharge chamber as described above, there is also a system in which the upper surface of the discharge chamber of the vacuum vessel is made of an insulating top plate and the antenna is installed outside the top. However, in this method, the thickness of the insulator on the top plate of the current discharge chamber having a diameter of 300 mmφ is 20 mm.
In contrast, when the diameter of the discharge chamber is increased to 400 mmφ or more, the thickness of the discharge chamber needs to be as large as 30 to 50 mm in order to secure mechanical strength.
【０００７】[0007]
【発明が解決しようとする課題】真空容器の絶縁体隔壁
あるいは天板の大気側の壁面に高周波アンテナを設置す
る従来の誘導結合型プラズマ発生装置では、放電室の径
が大きくなるにつれ絶縁体の厚みを大幅に増大させなけ
ればならず、またアンテナから放射される誘導電界の
内、真空容器の絶縁体隔壁あるいは天板に接する面の側
に放射される誘導電界成分のみしか放電維持に利用され
ないため、投入される高周波電力の利用効率が悪いとい
う問題があった。In a conventional inductively-coupled plasma generator in which a high-frequency antenna is installed on an insulating partition wall of a vacuum vessel or on an atmosphere-side wall surface of a ceiling plate, as the diameter of the discharge chamber increases, the thickness of the insulator increases. The thickness must be greatly increased, and of the induced electric field radiated from the antenna, only the induced electric field component radiated to the surface in contact with the insulating partition or top plate of the vacuum vessel is used for maintaining the discharge. Therefore, there is a problem that the efficiency of using the supplied high frequency power is poor.
【０００８】[0008]
【課題を解決するための手段】上記の問題点を解決する
ために、本発明によるプラズマ発生装置においては、ア
ンテナ自体を真空容器内部の任意の場所に設置し、つま
り内部アンテナにしてアンテナの全表面が真空内にある
ようにし、アンテナから放射される誘導電界の全てを有
効利用できるようにするとともに絶縁体の隔壁や天板を
用いる必要をなくしている。また同時に本発明では、内
部アンテナの場合、アンテナに大きな電圧が印加される
と異常放電を生じやすくなることから、アンテナのイン
ダクタンスを極力小さくし、少なくともアンテナが１タ
ーン以上周回しない構造としている。以下に、本発明の
原理について詳述する。In order to solve the above-mentioned problems, in the plasma generating apparatus according to the present invention, the antenna itself is installed at an arbitrary position inside the vacuum vessel, that is, the entire antenna is formed as an internal antenna. The surface is in a vacuum so that all of the induced electric field radiated from the antenna can be used effectively, and the necessity of using an insulating partition wall or a top plate is eliminated. At the same time, according to the present invention, when a large voltage is applied to the antenna, abnormal discharge is likely to occur when the internal antenna is used. Therefore, the inductance of the antenna is made as small as possible, and the antenna does not go around at least one turn. Hereinafter, the principle of the present invention will be described in detail.
【０００９】アンテナを真空チャンバー内に導入した場
合、アンテナ自体がプラズマに曝される為、アンテナに
印加される電圧に依存してイオンや電子がアンテナに流
入する。この時プラズマ中のイオンと電子の高周波電磁
界に対する移動速度が大きく異なることから、時間平均
では実効的にプラズマ中の電子がアンテナへ過剰に流入
してプラズマ電位が上昇する。その結果、投入高周波電
力の増加によるプラズマの高密度化に伴いアンテナ導体
との静電結合によるプラズマ電位の上昇が顕著となり、
真空容器内に異常放電を引き起こす。この様に内部アン
テナ型のＩＣＰプラズマでは安定した高密度プラズマが
得にくいという問題がある。また、静電結合の増加は、
アンテナからシースを介してプラズマに印加される高周
波電圧の振幅を大きくする。高周波電圧の振幅の増大
は、プラズマの乱れ（プラズマ電位の高周波変動の増
大）を誘発する。その結果、エッチングや薄膜形成時に
おけるプラズマの揺らぎが大きくなり（例えばイオン入
射エネルギーの増大）、プラズマダメージの影響が懸念
される。よって、内部アンテナ型のＩＣＰプラズマ生成
においては、印加する高周波電圧の低動作電圧化が重要
であり、そのためには、アンテナのインダクタンス低減
および静電結合の抑制が必要である。When the antenna is introduced into the vacuum chamber, ions and electrons flow into the antenna depending on the voltage applied to the antenna because the antenna itself is exposed to plasma. At this time, since the moving speeds of ions and electrons in the plasma with respect to the high-frequency electromagnetic field are greatly different, electrons in the plasma effectively flow excessively into the antenna and the plasma potential rises on a time average. As a result, the increase in plasma potential due to electrostatic coupling with the antenna conductor becomes remarkable with the increase in plasma density due to the increase in input high-frequency power,
Causes abnormal discharge in the vacuum vessel. Thus, there is a problem that it is difficult to obtain a stable high-density plasma with the internal antenna type ICP plasma. Also, the increase in electrostatic coupling
The amplitude of the high-frequency voltage applied to the plasma from the antenna via the sheath is increased. An increase in the amplitude of the high-frequency voltage induces turbulence in the plasma (increase in high-frequency fluctuation of the plasma potential). As a result, the fluctuation of plasma at the time of etching or thin film formation becomes large (for example, increase of ion incident energy), and there is a concern about the influence of plasma damage. Therefore, in the generation of the internal antenna type ICP plasma, it is important to reduce the operating frequency of the applied high-frequency voltage, and for that purpose, it is necessary to reduce the inductance of the antenna and suppress the electrostatic coupling.
【００１０】このため本発明では、請求項１に記するよ
うにアンテナ自体を真空容器内の任意の場所に設置する
ことを特徴とする。これにより放電室の形状や口径およ
び長さに制限されることなく、大口径の高密度プラズマ
を生成することが可能となる。For this reason, the present invention is characterized in that the antenna itself is installed at an arbitrary place in the vacuum vessel as described in claim 1. This makes it possible to generate large-diameter, high-density plasma without being limited by the shape, diameter, and length of the discharge chamber.
【００１１】また本発明では、請求項２に記するよう
に、当該アンテナの全表面が真空に曝されていることを
も特徴とする。According to the present invention, as set forth in claim 2, the whole surface of the antenna is exposed to vacuum.
【００１２】さらに本発明では、請求項３に記するよう
に、内部アンテナ化に伴う静電結合の増加を抑制するた
め、アンテナ導体の表面を全て絶縁体で被覆することを
も特徴とする。Further, the present invention is characterized in that the surface of the antenna conductor is entirely covered with an insulator in order to suppress an increase in electrostatic coupling due to the internal antenna.
【００１３】さらに本発明では、請求項４に記するよう
に、アンテナの大型化に伴うインダクタンスの増加を抑
制するため、アンテナは周回しないで終端する線状の導
体で構成することを特徴とする。Further, according to the present invention, in order to suppress an increase in inductance due to an increase in the size of the antenna, the antenna is constituted by a linear conductor that terminates without going around. .
【００１４】さらに本発明では、請求項５に記するよう
に、アンテナを、少なくとも１つ以上のコの字形または
円弧形の線状の導体で構成することにより、インダクタ
ンスの減少を図ることをも特徴とする。Further, according to the present invention, the antenna is formed by at least one or more U-shaped or arc-shaped linear conductors to reduce the inductance. Also features.
【００１５】さらに本発明では、請求項６に記するよう
に、アンテナは２つのコの字形または半円形の枠を形成
する線状の導体を真空容器の内壁に沿って配置する構造
をとることをも特徴とする。Further, according to the present invention, as set forth in claim 6, the antenna has a structure in which linear conductors forming two U-shaped or semicircular frames are arranged along the inner wall of the vacuum vessel. Is also characterized.
【００１６】さらに本発明では、請求項７に記するよう
に、アンテナは真空容器の内壁に沿って配置した少なく
とも１つ以上の直線状導体で構成し、それら１つ以上の
直線状導体の各々へ高周波電流を並列に供給することを
も特徴とする。Further, in the present invention, the antenna is constituted by at least one or more linear conductors arranged along the inner wall of the vacuum vessel, and each of the one or more linear conductors is provided. It is also characterized in that a high-frequency current is supplied in parallel to
【００１７】さらに本発明では、請求項８に記するよう
に、アンテナをリング状の導体で構成し、該リング状導
体のある一点と、該一点に直径線上で対向する他の一点
との間でリング状導体に高周波電流を供給することをも
特徴とする。Further, according to the present invention, the antenna is constituted by a ring-shaped conductor, and the antenna is formed between one point of the ring-shaped conductor and another point opposed to the point on the diameter line. And supplying a high-frequency current to the ring-shaped conductor.
【００１８】さらに本発明では、請求項９に記するよう
に、真空容器内のプラズマの密度が一様になるよう、真
空容器の外壁に沿ってマルチカスプ型の永久磁石を取り
付けたことを特徴とする。Further, according to the present invention, a multi-cusp type permanent magnet is attached along the outer wall of the vacuum vessel so that the plasma density in the vacuum vessel becomes uniform. I do.
【００１９】さらに本発明では、請求項10に記するよう
に、大電力投入による高周波電圧増大を抑制するため、
アンテナの終端と接地との間に電気容量が固定または可
変のコンデンサを挿入することにより、アンテナに発生
する対地高周波電圧を半減することを特徴とする。Further, in the present invention, as described in claim 10, in order to suppress an increase in the high-frequency voltage due to a large power input,
By inserting a fixed or variable capacitor between the terminal of the antenna and the ground, the high frequency voltage to the ground generated in the antenna is halved.
【００２０】本発明によるプラズマ発生装置の基本構成
を、図１により説明する。なお、図１には、便宜上、本
発明の１実施例装置の構成が示されているが、本発明は
これに限定されるものではない。The basic configuration of the plasma generator according to the present invention will be described with reference to FIG. FIG. 1 shows a configuration of an apparatus according to an embodiment of the present invention for convenience, but the present invention is not limited to this.
【００２１】図１において、１は真空容器（プロセスチ
ェンバー）、２は天板、３は排気口、４は基板電極、５
は本発明によるアンテナ導体、６はアンテナ導体５の全
表面を被覆する絶縁体チューブ、７はアンテナ導体５を
接地から浮遊（フローティング）させる容量が固定ある
いは可変のブロッキングコンデンサ、８、９はアンテナ
導体５を支持するとともにアンテナ導体５に高周波電力
を供給する導入端子である。In FIG. 1, 1 is a vacuum vessel (process chamber), 2 is a top plate, 3 is an exhaust port, 4 is a substrate electrode, 5
Is an antenna conductor according to the present invention, 6 is an insulating tube covering the entire surface of the antenna conductor 5, 7 is a fixed or variable blocking capacitor for floating the antenna conductor 5 from ground, and 8 and 9 are antenna conductors. 5 is an introduction terminal that supports the antenna conductor 5 and supplies high-frequency power to the antenna conductor 5.
【００２２】アンテナ導体５は、図では断面のみが示さ
れているが、真空容器１の内壁面に沿って配置された1
つ以上のコの字形あるいは円弧形等の種々の形状の線状
導体で構成される。それらの線状導体は、いずれも真空
容器１の内壁面を周回しない長さ、つまり内壁面を一周
しないで終端する長さにつくられる。具体的には、例え
ば図３、図９、図１０、図１１に示されているようなア
ンテナのパターンなどが適用できる。Although only a cross section is shown in the figure, the antenna conductor 5 is arranged along the inner wall surface of the vacuum vessel 1.
It is composed of linear conductors of various shapes such as one or more U-shape or arc shape. Each of these linear conductors is formed to have a length that does not go around the inner wall surface of the vacuum vessel 1, that is, a length that ends without going around the inner wall surface. Specifically, for example, the antenna patterns shown in FIGS. 3, 9, 10, and 11 can be applied.
【００２３】プラズマ励起用のアンテナ全体が真空容器
１内に収容されているため、真空容器の一部を厚い絶縁
体材料で形成する必要がなく、装置の大口径化が容易で
あり、アンテナの形状変更も任意かつ容易に行うことが
できる。Since the entire antenna for plasma excitation is housed in the vacuum vessel 1, it is not necessary to form a part of the vacuum vessel with a thick insulating material, so that the diameter of the apparatus can be easily increased, and the antenna can be easily used. The shape can be changed arbitrarily and easily.
【００２４】図示のように、真空容器１内でアンテナ導
体５の全表面を絶縁体チューブ６で覆った場合、図２の
等価回路に示すように、プラズマのシース領域に印加さ
れる電圧（Ｖsheath )は、アンテナに発生する電圧 (Ｖ
antenna ) と絶縁体における電位降下分
（Ｖinsulator ) を用いて次式のように表すことができ
る。 Ｖsheath＝Ｖantenna −Ｖinsulator ＝Ｖantenna Ｚsheath／（Ｚinsulator ＋Ｚsheath） （１） ここでＺinsulator 及びＺsheathは絶縁体及びシース領
域のインピーダンスを示す。これらインピーダンスは主
に抵抗成分と静電容量成分で構成されている。高周波電
力を増大させプラズマの密度が増加した際、プラズマ中
の等価抵抗（抵抗成分）の減少とシースの厚みの低下に
よる静電容量の増加（注：シースの静電容量はシースの
厚さに逆比例する。）のためにＺsheathは減少する。
（注：インピーダンスの静電容量成分は静電容量の逆数
比例するため、シースの静電容量増加はインピーダンス
の減少に寄与する。）これに対しＺinsulatorはプラズ
マ状態に関わらず一定であることにより、プラズマ密度
が高くなるほどＶsheathの値は小さくなる。この様にア
ンテナ表面を絶縁体で被覆することにより、アンテナへ
の電子流入が遮断され、アンテナとプラズマとの静電結
合成分が抑制される。その結果、プラズマの高密度化に
伴うプラズマ電位の急増が抑制され、異常放電を起こす
ことなく安定した高密度プラズマ生成が可能になる。ま
た、シース電位が小さくなることにより、プラズマによ
る真空容器内壁やアンテナへのスパッタリングが抑制さ
れ、基材表面や薄膜中への不純物混入を低減できる。As shown in the figure, when the entire surface of the antenna conductor 5 is covered with the insulating tube 6 in the vacuum vessel 1, as shown in the equivalent circuit of FIG. sheath ) is the voltage (V
Antenna ) and the potential drop (V insulator ) in the insulator can be expressed as the following equation. V sheath = V antenna -V insulator = V antenna Z sheath / (Z insulator + Z sheath ) (1) Here, Z insulator and Z sheath indicate the impedance of the insulator and the sheath region. These impedances are mainly composed of a resistance component and a capacitance component. When the high-frequency power is increased and the density of the plasma is increased, the equivalent resistance (resistance component) in the plasma decreases and the capacitance increases due to the decrease in the thickness of the sheath. Z sheath decreases because of inverse proportion.)
(Note: Since the capacitance component of the impedance is inversely proportional to the capacitance, an increase in the capacitance of the sheath contributes to a decrease in the impedance.) On the other hand, since the Z insulator is constant regardless of the plasma state, As the plasma density increases, the value of V sheath decreases. By covering the surface of the antenna with the insulator in this way, the inflow of electrons into the antenna is cut off, and the electrostatic coupling component between the antenna and the plasma is suppressed. As a result, a rapid increase in the plasma potential due to the increase in the density of the plasma is suppressed, and stable high-density plasma can be generated without causing abnormal discharge. In addition, by reducing the sheath potential, sputtering of plasma on the inner wall of the vacuum vessel and the antenna by plasma is suppressed, and contamination of impurities on the surface of the base material and the thin film can be reduced.
【００２５】絶縁体の材質ならびに厚さの選択にあたっ
ては、シースの等価インピーダンスよりも十分（例えば
一桁以上）大きいインピーダンスを有する（Ｚinsulato
r ＞＞Ｚsheath）ことが必要であり、さらにはプラズマ
に直接曝されても問題を生じない耐熱性、化学的安定
性、機械的強度、電気絶縁性等を有することを要件とす
る。このため、例えば高純度アルミナ、石英、ジルコニ
ア等の高抵抗、高絶縁性、低誘電率を同時に満たすこと
が可能なセラミックス誘電体群の材質で、厚みは２〜４
ｍｍ程度であればよい。In selecting the material and thickness of the insulator, the insulator has an impedance sufficiently larger (for example, one digit or more) than the equivalent impedance of the sheath (Z insulato).
r >> Z sheath ), and must have heat resistance, chemical stability, mechanical strength, electrical insulation, etc., which do not cause a problem even when directly exposed to plasma. For this reason, for example, it is a material of a ceramic dielectric group that can simultaneously satisfy high resistance, high insulation, and low dielectric constant, such as high-purity alumina, quartz, and zirconia, and has a thickness of 2 to 4
mm.
【００２６】図３は、周回しないで終端させたアンテナ
形状の１例を示す。図示されている高周波アンテナ１０
は、断面が矩形の真空容器１内で、線状導体を壁面に沿
ってコの字に半周させたアンテナを２つ対向させ、並列
接続して構成した矩形状の枠を持つアンテナの例であ
る。真空容器１が円筒状をなしている場合には、コの字
のパターンの代わりに半円のパターンを２つ向き合わせ
て並列接続した円形状の枠を持つアンテナを用いること
ができる。なお、必要に応じて矩形あるいは円形を３つ
以上のパターンに分割したアンテナを並列接続して、全
体が矩形状あるいは円形状の枠を持つアンテナを用いる
ことも可能である。FIG. 3 shows an example of an antenna shape which is terminated without going around. High frequency antenna 10 shown
Is an example of an antenna having a rectangular frame formed by connecting two parallel antennas in a vacuum vessel 1 having a rectangular cross section, in which two linear conductors have a half-circle in a U-shape along a wall surface and connected in parallel. is there. When the vacuum vessel 1 has a cylindrical shape, an antenna having a circular frame in which two semicircular patterns are opposed to each other and connected in parallel can be used instead of the U-shaped pattern. It is also possible to connect antennas obtained by dividing a rectangle or a circle into three or more patterns as necessary, and use an antenna having a rectangular or circular frame as a whole.
【００２７】このような周回しない高周波アンテナ１０
は、従来のループやコイルなどの周回する形状のアンテ
ナに比べ、アンテナの持つインダクタンスを大幅に低減
できる。その結果、高周波電力増大に伴う高周波電圧の
増大を抑制することが出来る。[0027] Such a non-circulating high frequency antenna 10
Can greatly reduce the inductance of the antenna as compared with a conventional loop-shaped antenna such as a loop or a coil. As a result, it is possible to suppress an increase in high-frequency voltage due to an increase in high-frequency power.
【００２８】高周波アンテナ１０の接地側端子と接地と
の間には、ブロッキングコンデンサ７が挿入され、駆動
側端子へは、整合器１１を介して高周波電力が供給され
る。図４（ａ）、（ｂ）は、接地電位に直接接続された
接地型アンテナと、コンデンサを介して接地電位に接続
された浮遊型アンテナの等価回路を示す。ここでＬはア
ンテナのインダクタンス、ｒc はアンテナの内部抵抗、
Ｃ0 、Ｃ1 、Ｃ2 はマッチングコンデンサ、Ｃb はブロ
ッキングコンデンサ、ωは高周波電流の角周波数であ
る。A blocking capacitor 7 is inserted between the ground terminal of the high-frequency antenna 10 and the ground, and high-frequency power is supplied to the drive terminal via the matching unit 11. 4A and 4B show equivalent circuits of a grounded antenna directly connected to the ground potential and a floating antenna connected to the ground potential via a capacitor. Where L is the antenna inductance, r c is the internal resistance of the antenna,
C 0 , C 1 , C 2 are matching capacitors, C b is a blocking capacitor, and ω is the angular frequency of the high-frequency current.
【００２９】図４（ａ）、（ｂ）の何れの場合において
も、高周波アンテナの高電位側電圧｜ＶH ｜と低電位側
電圧｜ＶL ｜との間に発生する高周波電圧は、アンテナ
電流Ｉrf、アンテナのインダクタンスＬ、アンテナの内
部抵抗ｒc を用いて、次の数１に示す式で与えられる。4A and 4B, the high-frequency voltage generated between the high-potential-side voltage | V H | and the low-potential-side voltage | V L | current I rf, antenna inductance L, by using the internal resistance r c of the antenna is given by the formula shown in the following equation 1.
【００３０】[0030]
【数１】 (Equation 1)
【００３１】ここで、また一般に使用される金属製アン
テナにおいては、内部抵抗ｒc は無視できる程度に小さ
い。したがって図４（ｂ）に示すように、アンテナの終
端にブロッキングコンデンサＣb を接続した浮遊型アン
テナの場合のアンテナ両端の電位｜ＶL ｜、｜ＶH ｜は
それぞれ次式で表せる。[0031] Here, also in the metal antenna that is commonly used, small enough internal resistance r c negligible. Therefore, as shown in FIG. 4B , the potentials | V L | and | V H | at both ends of the floating antenna in which the blocking capacitor Cb is connected to the end of the antenna can be expressed by the following equations.
【００３２】 ｜ＶL ｜＝（１／ωＣb ）Ｉrf （３） ｜ＶH ｜＝｜１／ｊωＣb ＋ｊωＬ｜Ｉrf （４） 図４（ａ）、（ｂ）において共振条件が成立する時、Ｌ
とＣ0 は１／ω2 ＝［Ｃ0 Ｃ1 ／（Ｃ0 ＋Ｃ1 ）］Ｌ＝
Ｃ1 Ｌとなる。| V L | = (1 / ωC b ) I rf (3) | V H | = | 1 / jωC b + jωL | I rf (4) In FIGS. 4A and 4B, the resonance condition is satisfied. When you do, L
And C 0 are 1 / ω 2 = [C 0 C 1 / (C 0 + C 1 )] L =
C 1 L.
【００３３】また、一般に整合器１１における入力イン
ピーダンスは５０オーム程度の低インピーダンスである
ため、Ｃ0 ＞＞Ｃ1 を満たす。さらに、アンテナとの整
合時には１／Ｃ1 ＝１／Ｃ2 ＋１／Ｃb を満足する。そ
の結果、図４（ｂ）の浮遊型アンテナにおけるアンテナ
両端の電圧比は次式のように表せる。In general, the input impedance of the matching unit 11 is a low impedance of about 50 ohms, so that C 0 >> C 1 is satisfied. Further, at the time of matching with the antenna, 1 / C 1 = 1 / C 2 + 1 / C b is satisfied. As a result, the voltage ratio between both ends of the floating antenna shown in FIG. 4B can be expressed by the following equation.
【００３４】 ｜ＶH ／ＶL ｜＝Ｃb ／Ｃ2 （５） 図４（ａ）に示すアンテナの終端を接地電位に直接接続
している接地型アンテナの場合における高電位側の高周
波電圧の振幅は、低電位側が接地電位（ＶL ＝０Ｖ）に
固定されるのでωＬrfとなる。| V H / V L | = C b / C 2 (5) High-potential high-frequency voltage in the case of a grounded antenna in which the end of the antenna shown in FIG. 4A is directly connected to the ground potential Is ωL rf because the low potential side is fixed to the ground potential (V L = 0 V).
【００３５】これに対し図４（ｂ）の浮遊型アンテナの
アンテナ両端の電圧は、式（２）、（５）からωＬＩrf
より小さくなる。そして終端容量が平衡条件を満たして
Ｃb とＣ2 の比が１となる時、最小値ＶH ＝ＶL ＝ωＬ
Ｉrf／２が得られる。On the other hand, the voltage across the antenna of the floating type antenna shown in FIG. 4 (b) is calculated from the equations (2) and (5) as ωLI rf
Smaller. And when the ratio of C b and C 2 termination capacity satisfies the equilibrium condition is 1, the minimum value V H = V L = ωL
I rf / 2 is obtained.
【００３６】ここで、プラズマへの高周波電流の漏洩が
無視できる単純な場合を想定すると、図５（ａ）、
（ｂ）に示すように、アンテナ導体に沿って分布する高
周波電圧は、ＶL からＶH まで直線状に変化する。この
場合、図５（ｂ）に示すアンテナ終端にコンデンサ（Ｃ
b ）を接続した浮遊型アンテナでは、アンテナ自体
（Ｌ）と整合器内のマッチングコンデンサ（Ｃ2 ）及び
接地電位の間に挿入したブロッキングコンデンサ
（Ｃb ）の各インピーダンスがωＬ＝２／ωＣb ＝２／
ωＣ2 を満足するとき、アンテナ高電位側の電圧ＶH の
振幅は、図５（ａ）に示すアンテナを直接接地電位に接
続した接地型アンテナの場合の振幅（ωＬＩrf）の半分
となる。Here, assuming a simple case where the leakage of the high-frequency current to the plasma can be ignored, FIG.
(B), the high-frequency voltage is distributed along the antenna conductor is changed linearly from V L to V H. In this case, a capacitor (C
b ), the impedance of the antenna itself (L), the impedance of the matching capacitor (C 2 ) in the matching device and the impedance of the blocking capacitor (C b ) inserted between the ground potential are ωL = 2 / ωC b = 2 /
When ωC 2 is satisfied, the amplitude of the voltage V H on the high potential side of the antenna is half the amplitude (ωLI rf ) of the grounded antenna in which the antenna shown in FIG. 5A is directly connected to the ground potential.
【００３７】そして、先に示したように、周回しない線
状導体のアンテナへ高周波電流を供給することと、アン
テナの終端にコンデンサを挿入してインピーダンスの整
合を取ることを組み合わせることにより、アンテナにか
かる高周波電圧の振幅を大きく低減できる。例えば、本
発明による周回しないアンテナの１実施例である図９に
示すようなリング状導体のアンテナ（ダブル・ハーフル
ープアンテナ）の場合には、後述される様に、同径で従
来方式の周回する１ターンのアンテナの場合に比べてイ
ンダクタンスは１／２となる。このため、周回する１タ
ーンのアンテナを用いてその接地側電極を直接に接地電
位に接続する従来の方式に比べて、高周波電圧の対地振
幅はその約１／４となる。これは、アンテナに発生する
対地電圧振幅として、従来方式と同程度の電圧が許され
る場合、従来方式に比べて１６倍もの高出力の高周波電
力を供給可能であることを示している。As described above, the combination of supplying a high-frequency current to a linear conductor antenna that does not go around and inserting a capacitor at the end of the antenna to obtain impedance matching is combined. The amplitude of such a high-frequency voltage can be greatly reduced. For example, in the case of a ring-shaped conductor antenna (double half-loop antenna) as shown in FIG. 9 which is an embodiment of the non-circular antenna according to the present invention, as will be described later, Inductance is halved compared to a one-turn antenna. For this reason, the ground amplitude of the high-frequency voltage is about そ の of that in the conventional method in which the ground-side electrode is directly connected to the ground potential using the one-turn antenna that rotates. This indicates that, when the same voltage as that of the conventional method is allowed as the amplitude of the ground voltage generated in the antenna, it is possible to supply high-frequency power with a power 16 times higher than that of the conventional method.
【００３８】[0038]
【発明の実施の形態】図１に示した本発明装置の１実施
例を説明する。本装置は直径４００ｍｍ、高さ２００ｍ
ｍの円筒型真空容器１の内部に、アンテナ導体５とし
て、図９に示される直径３６０ｍｍのリング電極からな
る高周波アンテナ１４を容器側壁に設けた２つの導入端
子８、９に固定して設置している。そして容器側壁の一
方の導入端子８には、図９に示されている高周波電源
（周波数：１３．５６ＭＨｚ) １２が整合器１１を介し
て接続されている。そしてこのリング電極の表面全て
を、肉厚２ｍｍの高純度アルミナセラミックス（９９．
６ａｔ％）の絶縁体チューブ６で被覆している。絶縁体
の材質ならびに厚さの選択にあたっては、式（１）から
も分かるように、シースの等価インピーダンスよりも十
分に大きい（例えば一桁以上）インピーダンスを有する
（Ｚinsulator ＞＞Ｚshea th）ことが必要であり、さら
にはプラズマに直接曝されても問題を生じない耐熱性、
化学的安定性、機械的強度、電気絶縁性等を有すること
を要件とする。このため、例えば高純度アルミナ、石
英、ジルコニア等の高抵抗、高絶縁性、低誘電率を同時
に満たすことが可能なセラミック誘電体群の材質で、厚
みは２〜４ｍｍ程度であればよい。また他方の導入端子
９にはコンデンサ（静電容量：４００ｐＦ）が接続され
ており、このコンデンサを介して接地されている。図９
に示すように導入端子は、リング状電極に対して直径線
上で向かい合うように配置され、リング状電極の直径線
上の２つの接続点から高周波電力を供給するような構造
（ダブル・ハーフループアンテナ）になっている。この
様な電力の供給方式により、同径で従来方式の周回形状
を有する１ターンのアンテナの場合に比べて、アンテナ
のインダクタンスは半減される。本実施例に用いたリン
グ電極（フルループ）のインダクタンスを計測した結
果、約１２００ｎＨであった。そして、ダブル・ハーフ
ループ構造にてインダクタンスを同様に計測した結果６
００ｎＨが得られ、インダクタンスは半減した。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the apparatus of the present invention shown in FIG. 1 will be described. This device is 400mm in diameter and 200m in height
A high-frequency antenna 14 composed of a ring electrode having a diameter of 360 mm as shown in FIG. 9 is fixed to two introduction terminals 8 and 9 provided on the side wall of the container as the antenna conductor 5 inside the cylindrical vacuum container 1 of m. ing. A high-frequency power supply (frequency: 13.56 MHz) 12 shown in FIG. 9 is connected to one of the introduction terminals 8 on the side wall of the container via a matching unit 11. Then, the entire surface of the ring electrode is made of high-purity alumina ceramics (99.
(6 at%). When selecting the material and thickness of the insulator, as can be seen from Equation (1), the insulator must have an impedance sufficiently larger (for example, one digit or more) than the equivalent impedance of the sheath (Z insulator >> Z shea th ). Is necessary, and furthermore, heat resistance which does not cause a problem even when directly exposed to plasma,
It must have chemical stability, mechanical strength, electrical insulation, etc. For this reason, for example, a material of a ceramic dielectric group that can simultaneously satisfy high resistance, high insulation, and low dielectric constant, such as high-purity alumina, quartz, and zirconia, may have a thickness of about 2 to 4 mm. A capacitor (capacitance: 400 pF) is connected to the other introduction terminal 9 and is grounded via this capacitor. FIG.
As shown in (1), the introduction terminal is disposed so as to face the ring-shaped electrode on the diameter line, and a high-frequency power is supplied from two connection points on the diameter line of the ring-shaped electrode (double half-loop antenna). It has become. With such a power supply method, the inductance of the antenna is reduced by half as compared with the case of a single-turn antenna having the same diameter and the conventional round shape. As a result of measuring the inductance of the ring electrode (full loop) used in this example, it was about 1200 nH. Then, the inductance was similarly measured in the double half-loop structure.
00nH was obtained, and the inductance was reduced by half.
【００３９】また、容器側壁の導入フランジを用いてプ
ラズマ計測用のラングミュアープローブを導入し、この
プローブによりプラズマ状態を計測した。Further, a Langmuir probe for plasma measurement was introduced using the introduction flange on the side wall of the container, and the state of the plasma was measured by the probe.
【００４０】まず、真空ポンプにて真空容器内を１×１
０-4Ｐａまで排気した後、図示していないガス導入口よ
りアルゴンガス（Ａｒ）を1.1 Ｐａまで導入し、高周波
電力を１２０Ｗ〜２４００Ｗまで投入し、真空容器内に
プラズマを発生させた。この時ラングミュアープローブ
により真空容器中心部（アンテナ設置面より−６５ｍ
ｍ）のプラズマ密度を計測した。First, the inside of a vacuum vessel is 1 × 1 by a vacuum pump.
After evacuation to 0 -4 Pa, argon gas (Ar) was introduced to 1.1 Pa from a gas inlet (not shown), high-frequency power was supplied from 120 W to 2400 W, and plasma was generated in the vacuum vessel. At this time, a Langmuir probe was used to measure the center of the vacuum vessel (-65 m from the antenna installation surface).
m) was measured.
【００４１】また、アンテナの接地側に挿入したコンデ
ンサの効果を検討するため、コンデンサを挿入した場合
（浮遊型アンテナ）とアンテナ終端を直接接地電位に接
続した場合（接地型アンテナ）について実験を行い比較
した。In order to examine the effect of the capacitor inserted on the ground side of the antenna, an experiment was conducted for the case where the capacitor was inserted (floating antenna) and the case where the antenna terminal was directly connected to the ground potential (grounded antenna). Compared.
【００４２】図６に、浮遊型アンテナと接地型アンテナ
それぞれのアンテナ状態における高周波投入電力
（Ｐrf）とプラズマ密度（ｎp ）との関係を示す。同図
に見られるように、浮遊型アンテナ及び接地型アンテナ
何れにおいてもＰrfの増加に伴いｎp は増大し、Ｐrf＝
２．４ｋＷで荷電粒子密度が５×１０11（ｃｍ3 ）の高
密度プラズマが得られ、アンテナ接地状態の違いによる
ｎp の違いは無いことがわかる。また、本実施例で得ら
れるプラズマ密度は、従来方式による放電室径が３００
ｍｍφ以下のプラズマ発生装置で得られているものと同
程度かそれより高い値となっており、本発明のプラズマ
発生方式によれば、従来方式のプラズマ発生装置に比べ
て大口径化した場合でも実用化レベルの高密度プラズマ
が容易に得られることを示している。FIG. 6 shows the relationship between the high-frequency input power (P rf ) and the plasma density (n p ) in the respective antenna states of the floating antenna and the grounded antenna. As seen in the figure, n p with increasing P rf in any floating type antenna and the ground type antenna increases, P rf =
A high-density plasma having a charged particle density of 5 × 10 11 (cm 3 ) was obtained at 2.4 kW, and it was found that there was no difference in n p due to the difference in the antenna grounding state. In addition, the plasma density obtained in the present embodiment is 300
mmφ or less, which is about the same as or higher than that obtained with a plasma generator, and according to the plasma generation method of the present invention, even if the diameter is larger than that of a conventional plasma generator. This shows that a high-density plasma at a practical level can be easily obtained.
【００４３】さらに図７には、同時にオシロスコープで
計測した接地型アンテナと浮遊型アンテナそれぞれにお
ける高周波電圧（Ｖantenna ）の変化を示す。接地型ア
ンテナの場合、ｎp が１×１０11（ｃｍ3 ）以上になる
Ｐrf５００Ｗ以上の領域では、Ｐrfの増加に依存してＶ
antenna も増大する。これに対し高周波電圧平衡条件を
満たす浮遊型アンテナの場合、接地型アンテナの場合の
半分かそれ以下のＶantenna 値を示す。そして、Ｐrf＝
２．５ｋｗの時、接地型アンテナではＶantenna ＝約１
８００Ｖに対し、浮遊型アンテナでは、Ｖantenna ＝６
００Ｖと、約１／３の電圧に抑えられている。これらの
結果から、アンテナの接地側に高周波電圧平衡条件を満
たすコンデンサを挿入することは、プラズマ密度を低下
させることなくアンテナにかかる電圧値の低減を可能に
し、大電力投入による安定した高密度プラズマの生成を
容易にする。FIG. 7 shows the change of the high-frequency voltage (V antenna ) in each of the grounded antenna and the floating antenna measured by the oscilloscope at the same time. In the case of a grounded antenna, in an area of 500 W or more of P rf where n p is 1 × 10 11 (cm 3 ) or more, V p depends on the increase of P rf.
Antennas also increase. On the other hand, in the case of the floating antenna satisfying the high-frequency voltage balance condition, the V antenna value is half or less than that of the grounded antenna. And P rf =
At the time of 2.5 kW, V antenna = about 1 in the ground type antenna
For 800 V, the floating antenna has V antenna = 6
00V, which is about 1/3 of the voltage. From these results, inserting a capacitor that satisfies high-frequency voltage equilibrium conditions on the ground side of the antenna can reduce the voltage value applied to the antenna without lowering the plasma density. Facilitates the generation of
【００４４】図１の実施例と同様の装置を用いて、アル
ゴンガス（Ａr ) を1.1 Ｐａまで導入し、高周波電力を
１２０Ｗ〜２４００Ｗまで投入し、真空容器内にプラズ
マを発生させた。この時アンテナの終端は直接接地電位
に接続した。またこの時アンテナ表面の絶縁体被覆の効
果を検討するため、アンテナ表面に絶縁体を被覆した場
合としない場合について同様の実験を行って比較した。Using the same apparatus as in the embodiment of FIG. 1, argon gas (Ar) was introduced up to 1.1 Pa, high-frequency power was supplied from 120 W to 2400 W, and plasma was generated in the vacuum vessel. At this time, the end of the antenna was directly connected to the ground potential. At this time, in order to examine the effect of the insulator coating on the antenna surface, similar experiments were performed and compared with the case where the antenna surface was coated with the insulator.
【００４５】図８に、それぞれのアンテナ状態における
高周波投入電力（Ｐrf）に対するプラズマ密度（ｎp ）
の変化を示す。絶縁体被覆無しのアンテナ状態の場合、
Ｐrf＝５００ＷまではＰrfの増加に依存してプラズマ密
度（ｎp ）は増加する。しかしＰrf＝５００Ｗ以上にな
ると真空容器内の至る所（例えば、導入端子部）で異常
放電が多発し、安定したプラズマを得ることができなか
った。これはプラズマ密度の増加に伴いプラズマ電位が
急激に上昇し、その結果、真空容器内の各所で異常放電
が生じたと考えられる。FIG. 8 shows the plasma density (n p ) with respect to the high-frequency input power (P rf ) in each antenna state.
Shows the change in In the case of an antenna without insulation coating,
Up to P rf = 500 W, the plasma density (n p ) increases depending on the increase of P rf . However, when P rf = 500 W or more, abnormal discharge frequently occurred everywhere in the vacuum vessel (for example, the introduction terminal portion), and stable plasma could not be obtained. This is presumably because the plasma potential rapidly increased with an increase in the plasma density, and as a result, abnormal discharge occurred at various points in the vacuum vessel.
【００４６】一方、絶縁体で被覆したアンテナではＰrf
の増加に対し異常放電を起こすことなくｎp は増加し、
Ｐrf＝２．４ｋｗで５×１０11（ｃｍ-3）の高密度プラ
ズマが安定して得られている。これは、アンテナ表面を
絶縁体にて被覆したことにより、プラズマからアンテナ
に流入する電子が遮断され、その結果プラズマ電位の上
昇が抑制されたことに起因すると考えられる。この様
に、アンテナ表面を絶縁体で被覆することにより安定し
た高密度プラズマが得られることが明らかになった。On the other hand, in an antenna covered with an insulator, P rf
And the n p without respect to an increase of causing the abnormal discharge increase,
A high-density plasma of 5 × 10 11 (cm −3 ) is stably obtained at P rf = 2.4 kw. This is considered to be due to the fact that the antenna surface is covered with an insulator, whereby electrons flowing from the plasma into the antenna are cut off, and as a result, the rise in plasma potential is suppressed. Thus, it became clear that stable high-density plasma can be obtained by coating the antenna surface with the insulator.
【００４７】図９は、リング状の導体を用いたアンテナ
の実施例を示す。図中、１３は円筒状の真空容器で、断
面を示したもの、１４は真空容器１３の内壁に沿って配
置されたリング状導体からなる高周波アンテナである。
リング状導体の任意の直径線についてその2 つの端点に
駆動側の接続点と接地側の接続点が設定される。高周波
アンテナ１４は、これら２つの接続点で２つの対称な半
円形線状導体の枠を並列接続した構造を持つ。駆動側の
接続点には、整合器１１を介して高周波電源１２から高
周波電流が供給され、接地側の接続点と接地との間に
は、ブロッキングコンデンサ７が挿入されている。FIG. 9 shows an embodiment of an antenna using a ring-shaped conductor. In the drawing, reference numeral 13 denotes a cylindrical vacuum vessel, which is shown in cross section, and reference numeral 14 denotes a high-frequency antenna formed of a ring-shaped conductor arranged along the inner wall of the vacuum vessel 13.
A connection point on the drive side and a connection point on the ground side are set at two end points of an arbitrary diameter line of the ring-shaped conductor. The high-frequency antenna 14 has a structure in which two symmetrical semicircular linear conductor frames are connected in parallel at these two connection points. A high-frequency current is supplied from a high-frequency power supply 12 to a connection point on the drive side via a matching unit 11, and a blocking capacitor 7 is inserted between the connection point on the ground side and ground.
【００４８】図１０および図１１は、図３に示す装置の
変形実施例を示したものである。FIGS. 10 and 11 show a modified embodiment of the apparatus shown in FIG.
【００４９】図１０の実施例における高周波アンテナ１
６は、図３に示されている全体が矩形の枠状の高周波ア
ンテナ１０の内側に複数本の直線状導体を柵状に配設し
たものであり、図９の実施例の場合と実質的に同じ機能
をもつが、高周波電流を複数の直線状導体に並行して流
せるため、特に断面が矩形の真空容器１５内で高密度プ
ラズマ生成を行うのに有効である。The high-frequency antenna 1 in the embodiment shown in FIG.
Reference numeral 6 denotes a plurality of linear conductors arranged in a fence shape inside a high-frequency antenna 10 having a rectangular frame shape as a whole shown in FIG. 3, which is substantially the same as the embodiment of FIG. However, since high-frequency current can be passed through a plurality of linear conductors in parallel, it is particularly effective for generating high-density plasma in a vacuum vessel 15 having a rectangular cross section.
【００５０】また図１１に示す実施例は、複数の直線状
アンテナ１８ａ〜１８ｆを、真空容器１７の内壁面に沿
って縦方向か横方向、あるいは２次元状に配置したマル
チ型直線状アンテナである。各直線状アンテナ１８ａ〜
１８ｆは真空容器１７の外側で並列接続され、整合器１
１とブロッキングコンデンサ７が接続される。図１１の
実施例はマルチ型直線状アンテナである点を除けば、図
９の実施例の場合と実質的に同じ機能をもつが、特に大
口径で長軸の真空容器内での高密度プラズマ生成を行う
のに有効である。なお必要に応じて、各直線状アンテナ
１８ａ〜１８ｆをコの字形あるいは円弧形のアンテナに
変更することも可能である。The embodiment shown in FIG. 11 is a multi-type linear antenna in which a plurality of linear antennas 18a to 18f are arranged vertically or horizontally or two-dimensionally along the inner wall surface of the vacuum vessel 17. is there. Each linear antenna 18a ~
18f is connected in parallel outside the vacuum vessel 17,
1 and the blocking capacitor 7 are connected. The embodiment of FIG. 11 has substantially the same function as that of the embodiment of FIG. 9 except that it is a multi-type linear antenna, but in particular, a high-density plasma in a large-diameter and long-axis vacuum vessel. Useful for generating. If necessary, each of the linear antennas 18a to 18f can be changed to a U-shaped or arc-shaped antenna.
【００５１】また図１、図３、図９、図１０、図１１な
どの実施例において、真空容器の外壁に沿いマルチカス
プ型の永久磁石を取り付けるなど、適当な磁界発生手段
を付加することによって、プラズマ密度の一様性をさら
に向上させることができる。In the embodiments shown in FIGS. 1, 3, 9, 10, and 11, etc., by adding appropriate magnetic field generating means such as attaching a multi-cusp type permanent magnet along the outer wall of the vacuum vessel, The uniformity of the plasma density can be further improved.
【００５２】[0052]
【発明の効果】本発明では、プラズマ生成用のアンテナ
自体を真空容器内に設置しているため、放電室の形状や
口径および長さに制限されることがない。またアンテナ
導体の表面を全て絶縁体で被覆することにより、大口径
かつ大容積の高密度プラズマを安定して生成することが
可能になる。According to the present invention, since the plasma generating antenna itself is installed in the vacuum vessel, the shape, diameter and length of the discharge chamber are not limited. In addition, by covering the entire surface of the antenna conductor with an insulator, it is possible to stably generate a large-diameter, large-volume, high-density plasma.
【００５３】さらに本発明では、アンテナの大型化に伴
うインダクタンスの増加を抑制するため、周回しない線
状の導体をアンテナに用い、加えてアンテナの終端と接
地との間に電気容量が固定または可変のコンデンサを挿
入して整合させることにより、高密度でプラズマ電位の
低いプラズマが生成されるため、ダメージの少ないプラ
ズマ処理を実現可能にすると共に、異常放電を発生させ
ることなく大電力の高周波電力を供給できるため、プラ
ズマの高密度化を図ることが容易である。Further, in the present invention, in order to suppress an increase in inductance due to an increase in the size of the antenna, a linear conductor that does not go around is used for the antenna, and in addition, the capacitance is fixed or variable between the end of the antenna and the ground. By inserting and matching a capacitor, a high-density plasma with a low plasma potential is generated, so that plasma processing with little damage can be realized, and high-frequency high-frequency power without generating abnormal discharge can be realized. Since it can be supplied, it is easy to increase the density of the plasma.
【図１】本発明の基本構成説明図である。FIG. 1 is an explanatory diagram of a basic configuration of the present invention.
【図２】アンテナ導体を絶縁体で被覆した場合の等価回
路図である。FIG. 2 is an equivalent circuit diagram when an antenna conductor is covered with an insulator.
【図３】周回しないアンテナ形状の１例の構成図であ
る。FIG. 3 is a configuration diagram of an example of an antenna shape that does not rotate.
【図４】接地型アンテナと浮遊型アンテナの等価回路図
である。FIG. 4 is an equivalent circuit diagram of a grounded antenna and a floating antenna.
【図５】接地型アンテナと浮遊型アンテナの電圧分布説
明図である。FIG. 5 is an explanatory diagram of a voltage distribution between a grounded antenna and a floating antenna.
【図６】接地型アンテナと浮遊型アンテナにおける高周
波投入電力とプラズマ密度の関係を示すグラフである。FIG. 6 is a graph showing the relationship between high-frequency input power and plasma density in a grounded antenna and a floating antenna.
【図７】接地型アンテナと浮遊型アンテナにおける高周
波電圧の変化を示すグラフである。FIG. 7 is a graph showing a change in a high-frequency voltage in a grounded antenna and a floating antenna.
【図８】アンテナ表面の絶縁体被覆の効果を示すグラフ
である。FIG. 8 is a graph showing the effect of insulating coating on the antenna surface.
【図９】リング状の導体を用いたアンテナの実施例構成
図である。FIG. 9 is a configuration diagram of an embodiment of an antenna using a ring-shaped conductor.
【図１０】柵状の導体を用いたアンテナの実施例構成図
である。FIG. 10 is a configuration diagram of an embodiment of an antenna using a fence-shaped conductor.
【図１１】複数の直線状導体を用いたアンテナの実施例
構成図である。FIG. 11 is a configuration diagram of an embodiment of an antenna using a plurality of linear conductors.
【図１２】従来のＩＣＰを用いたプラズマ処理装置の１
例を示す構成図である。FIG. 12 shows a conventional plasma processing apparatus using an ICP.
It is a block diagram showing an example.
１：真空容器 ２：天板 ３：排気口 ４：基板電極 ５：アンテナ導体 ６：絶縁体チューブ ７：ブロッキングコンデンサ ８、９：導入端子 1: vacuum container 2: top plate 3: exhaust port 4: substrate electrode 5: antenna conductor 6: insulator tube 7: blocking capacitor 8, 9: introduction terminal
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5F004 AA06 AA16 BA20 BB11 BB18 BB23 BB30 BC08 BD01 BD04 DA23 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F004 AA06 AA16 BA20 BB11 BB18 BB23 BB30 BC08 BD01 BD04 DA23
Claims (10)
マ発生装置において、高周波電力を印加して誘導電界を
発生させるアンテナを真空容器内に設置したことを特徴
とするプラズマ発生装置。1. An inductively coupled plasma generator using a high-frequency discharge, wherein an antenna for generating an induction electric field by applying high-frequency power is provided in a vacuum vessel.
おいて、アンテナの全表面が真空に曝されていることを
特徴とするプラズマ発生装置。2. The plasma generator according to claim 1, wherein the entire surface of the antenna is exposed to a vacuum.
おいて、アンテナの全表面が絶縁体で被覆されているこ
とを特徴とするプラズマ発生装置。3. The plasma generator according to claim 1, wherein an entire surface of the antenna is covered with an insulator.
おいて、アンテナは周回しないで終端する線状の導体で
構成されていることを特徴とするプラズマ発生装置。4. The plasma generator according to claim 1, wherein the antenna is constituted by a linear conductor that terminates without going around.
ズマ発生装置において、アンテナは少なくとも１つ以上
のコの字形または円弧形の線状の導体で構成されること
を特徴とするプラズマ発生装置。5. The plasma generating apparatus according to claim 1, wherein the antenna comprises at least one or more U-shaped or arc-shaped linear conductors. Generator.
おいて、アンテナを構成する２つのコの字形または半円
形の枠を形成する線状の導体が真空容器の内壁に沿って
配置されていることを特徴とするプラズマ発生装置。6. The plasma generator according to claim 5, wherein two linear conductors forming a U-shaped or semicircular frame forming the antenna are arranged along the inner wall of the vacuum vessel. A plasma generator characterized by the above-mentioned.
ズマ発生装置において、アンテナは真空容器の内壁に沿
って配置されている少なくとも１つ以上の直線状導体で
構成され、それら１つ以上の直線状導体の各々へ高周波
電流を並列に供給することを特徴とするプラズマ発生装
置。7. The plasma generator according to claim 1, wherein the antenna comprises at least one or more linear conductors arranged along the inner wall of the vacuum vessel, and at least one of the linear conductors is provided. A high-frequency current is supplied in parallel to each of the linear conductors.
ズマ発生装置において、アンテナはリング状の導体で構
成され、該リング状導体のある一点と、該一点に直径線
上で対向する他の一点との間でリング状導体に高周波電
流を供給することを特徴とするプラズマ発生装置。8. The plasma generator according to claim 1, wherein the antenna is formed of a ring-shaped conductor, and one point of the ring-shaped conductor and another point opposite the point on a diameter line. A plasma generator, wherein a high-frequency current is supplied to a ring-shaped conductor between one point and the ring-shaped conductor.
ズマ発生装置において、真空容器の外側に、プラズマ密
度を一様にする磁界発生手段を設けたことを特徴とする
プラズマ発生装置。9. The plasma generating apparatus according to claim 1, further comprising: a magnetic field generating means for making the plasma density uniform outside the vacuum vessel.
ラズマ発生装置において、アンテナの接地側の接続点と
接地との間に、電気容量が固定または可変のコンデンサ
を挿入したことを特徴とするプラズマ発生装置。10. The plasma generator according to claim 1, wherein a capacitor having a fixed or variable electric capacity is inserted between a connection point on the ground side of the antenna and ground. Plasma generator.
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|---|---|---|---|
| JP21223899A JP3836636B2 (en) | 1999-07-27 | 1999-07-27 | Plasma generator |
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|---|---|---|---|
| JP21223899A JP3836636B2 (en) | 1999-07-27 | 1999-07-27 | Plasma generator |
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|---|---|---|---|
| JP2005257086A Division JP3836866B2 (en) | 2005-09-05 | 2005-09-05 | Plasma generator |
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| Publication Number | Publication Date |
|---|---|
| JP2001035697A true JP2001035697A (en) | 2001-02-09 |
| JP3836636B2 JP3836636B2 (en) | 2006-10-25 |
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