JP2001023797A - Inductively coupled plasma processing device - Google Patents
Inductively coupled plasma processing deviceInfo
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- JP2001023797A JP2001023797A JP11189024A JP18902499A JP2001023797A JP 2001023797 A JP2001023797 A JP 2001023797A JP 11189024 A JP11189024 A JP 11189024A JP 18902499 A JP18902499 A JP 18902499A JP 2001023797 A JP2001023797 A JP 2001023797A
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- antenna
- frequency antenna
- coupled plasma
- inductively coupled
- plasma processing
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、例えば、液晶デ
ィスプレイ（ＬＣＤ）等の基板に膜を成膜またはエッチ
ングする誘導結合プラズマ処理装置に関する。The present invention relates to an inductively coupled plasma processing apparatus for forming or etching a film on a substrate such as a liquid crystal display (LCD).
【０００２】[0002]
【従来の技術】半導体または液晶ディスプレイ（ＬＣ
Ｄ）の製造工程において、基板の表面に膜を成膜または
膜をエッチングするプラズマ処理装置として高密度プラ
ズマを発生できる誘導結合式のＩＣＰ（inductively co
upled plasma）が知られている。2. Description of the Related Art Semiconductor or liquid crystal displays (LC)
In the manufacturing process D), an inductively-coupled ICP (inductively-coupled ICP) capable of generating high-density plasma as a plasma processing apparatus for forming or etching a film on a substrate surface
upled plasma) is known.
【０００３】この誘導結合プラズマ処理装置は、図３ま
たは図４に示すように構成されている。すなわち、図３
は、アルミニウム等の導電性材料からなる矩形箱状のハ
ウジング１の天井部にセラミック、石英等の誘電体壁２
が設けられ、アンテナ取付け部３と処理室４とに区画さ
れている。This inductively coupled plasma processing apparatus is configured as shown in FIG. 3 or FIG. That is, FIG.
A dielectric wall 2 made of ceramic, quartz or the like is provided on the ceiling of a rectangular box-shaped housing 1 made of a conductive material such as aluminum.
And is divided into an antenna mounting part 3 and a processing chamber 4.
【０００４】そして、アンテナ取付け部３にはコイル状
の高周波アンテナ５が設置されている。高周波アンテナ
５は、一端側が第1整合器６を介して高周波電源７に接
続され、他端側はＧＮＤ８に接続されている。高周波ア
ンテナ５から誘導結合プラズマを発生させるのに十分な
出力を持った高周波電力、例えば１３．５６ＭＨｚの高
周波電力が供給されるようになっている。[0004] A coiled high-frequency antenna 5 is installed in the antenna mounting section 3. The high-frequency antenna 5 has one end connected to the high-frequency power source 7 via the first matching unit 6 and the other end connected to the GND 8. The high frequency antenna 5 supplies high frequency power having an output sufficient to generate inductively coupled plasma, for example, 13.56 MHz high frequency power.
【０００５】また、前記処理室４には被処理基板を載置
するためのサセプタ１０が設けられている。このサセプ
タ１０には第２整合器１１を介してバイアス用高周波電
源１２に接続されている。[0005] The processing chamber 4 is provided with a susceptor 10 for mounting a substrate to be processed. The susceptor 10 is connected to a bias high-frequency power supply 12 via a second matching unit 11.
【０００６】そして、高周波アンテナ５から誘導電界を
発生させるとともに、処理室４に各種反応ガスを導入
し、プラズマを生成して処理室４内の基板に膜を成膜ま
たはエッチングするようになっている。An induction electric field is generated from the high-frequency antenna 5 and various reaction gases are introduced into the processing chamber 4 to generate plasma to form or etch a film on a substrate in the processing chamber 4. I have.
【０００７】図４は、誘電体からなる円筒状のハウジン
グ１３の外周部にアンテナ取付け部１４が設けられ、内
部に処理室１５が設けられている。アンテナ取付け部１
４にはコイル状の高周波アンテナ１６が設置されてい
る。高周波アンテナ１６は、一端側が第1整合器６を介
して高周波電源７に接続され、他端側はＧＮＤ８に接続
されている。In FIG. 4, an antenna mounting portion 14 is provided on the outer periphery of a cylindrical housing 13 made of a dielectric, and a processing chamber 15 is provided inside. Antenna mounting part 1
4 is provided with a coiled high-frequency antenna 16. The high-frequency antenna 16 has one end connected to the high-frequency power supply 7 via the first matching device 6 and the other end connected to the GND 8.
【０００８】そして、高周波アンテナ１６から誘導電界
を発生させるとともに、処理室４に各種反応ガスを導入
し、プラズマを生成して処理室４内のＬＣＤ基板に膜を
成膜またはエッチングするようになっている。Then, an induction electric field is generated from the high-frequency antenna 16, and various reaction gases are introduced into the processing chamber 4 to generate plasma to form or etch a film on the LCD substrate in the processing chamber 4. ing.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、前述の
ように構成された誘導結合プラズマ処理装置は、高周波
アンテナ５，１６のインピーダンスは装置の大型化に伴
って上昇する。高周波アンテナ５，１６のインピーダン
スが大きくなると、高周波アンテナ５，１６の電位も上
昇する。However, in the inductively coupled plasma processing apparatus configured as described above, the impedance of the high-frequency antennas 5 and 16 increases as the size of the apparatus increases. When the impedance of the high-frequency antennas 5 and 16 increases, the potential of the high-frequency antennas 5 and 16 also increases.
【００１０】図５（ａ）は、図３に示した高周波アンテ
ナ５を示し、この高周波アンテナ５を図５（ｂ）に示す
ように、直線状に伸ばし、内周端をＡ点、中間をＢ点、
外周端をＣ点とすると、各点における電位はＧＮＤ８か
らの距離に比例して上昇する。そして、各点の波形は図
５（ｃ）に示すようになる。FIG. 5 (a) shows the high-frequency antenna 5 shown in FIG. 3, and this high-frequency antenna 5 is linearly extended as shown in FIG. 5 (b). Point B,
Assuming that the outer end is point C, the potential at each point increases in proportion to the distance from GND8. The waveform at each point is as shown in FIG.
【００１１】このため、高周波アンテナ５が長くなる
と、電力供給点（Ａ点）の電位は非常に大きくなり、結
果として高周波アンテナ５の中心部Ａと周辺部Ｃで大き
な電界偏りが生じる。また、この電界は、図５（ｄ）に
示すように誘導プラズマに必要な水平方向の電界Ｘでは
なく、垂直方向の電界Ｚであるため、垂直方向の電荷を
動かしてしまい、結果としてプラズマ密度を小さくする
という問題がある。For this reason, when the length of the high-frequency antenna 5 becomes longer, the potential at the power supply point (point A) becomes extremely large, and as a result, a large electric field bias occurs at the central portion A and the peripheral portion C of the high-frequency antenna 5. This electric field is not a horizontal electric field X required for the induced plasma but a vertical electric field Z as shown in FIG. 5 (d). There is a problem of reducing the size.
【００１２】この発明は、前記事情に着目してなされた
もので、その目的とするところは、高周波アンテナのイ
ンピーダンスを低下させ、アンテナ電位を均等かつ低下
させて高密度のプラズマを発生させることができる誘導
結合プラズマ処理装置を提供することにある。The present invention has been made in view of the above circumstances. It is an object of the present invention to reduce the impedance of a high-frequency antenna and to uniformly and lower the antenna potential to generate high-density plasma. It is an object of the present invention to provide an inductively-coupled plasma processing apparatus capable of performing the above-described steps.
【００１３】[0013]
【課題を解決するための手段】この発明は、前述した目
的を達成するために、請求項１は、処理室を構成するハ
ウジングにコイル状の高周波アンテナを設置し、前記処
理室に反応ガスを導入し、プラズマを生成して処理室内
の基板に膜を成膜または膜をエッチングする誘導結合プ
ラズマ処理装置において、前記高周波アンテナに、これ
と直列にコンデンサを設け、アンテナインピーダンスを
低下させることにより、アンテナ電位を低下させたこと
を特徴とする。According to the present invention, in order to achieve the above object, a first aspect of the present invention is to install a coiled high-frequency antenna in a housing constituting a processing chamber, and to supply a reaction gas to the processing chamber. Introduced, in an inductively coupled plasma processing apparatus that forms a film or etches a film on a substrate in a processing chamber by generating plasma, by providing a capacitor in series with the high-frequency antenna to lower the antenna impedance, The antenna potential is reduced.
【００１４】請求項２は、請求項１の前記コンデンサ
は、インピーダンスの絶対値がアンテナに対して略半分
の値を持つ１個のコンデンサであることを特徴とする。A second aspect of the present invention is characterized in that the capacitor of the first aspect is a single capacitor having an absolute value of impedance which is substantially half the value of the antenna.
【００１５】請求項３は、請求項１の前記コンデンサ
は、高周波アンテナに所定間隔を存して複数個設けられ
ていることを特徴とする。A third aspect of the present invention is characterized in that a plurality of the capacitors of the first aspect are provided at a predetermined interval in the high frequency antenna.
【００１６】前記構成によれば、高周波アンテナと直列
にコンデンサを挿入することにより、アンテナインピー
ダンスが低下し、電位を均等かつ低下させることができ
る。従って、アンテナ中心部と周辺部とにおける電界の
偏りをなくし、高密度のプラズマを発生させることがで
きる。According to the above configuration, by inserting a capacitor in series with the high-frequency antenna, the antenna impedance is reduced, and the potential can be reduced evenly. Therefore, it is possible to eliminate the bias of the electric field between the central portion and the peripheral portion of the antenna, and generate high-density plasma.
【００１７】[0017]
【発明の実施の形態】以下、この発明の実施の形態を図
面に基づいて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１８】図１は第１の実施形態を示し、図１（ａ）
は誘導結合プラズマ処理装置の処理室の天井部に取り付
けられるコイル状の高周波アンテナ２１を示し、扁平渦
巻き状で、アンテナ中心部に電力供給点２２が設けら
れ、アンテナ外周端部がＧＮＤ２３に接続されている。
そして、この高周波アンテナ２１のＧＮＤ２３の近傍に
位置する部位には同アンテナ２１と直列に１個のコンデ
ンサ２４が設けられている。FIG. 1 shows a first embodiment, and FIG.
Denotes a coiled high-frequency antenna 21 attached to the ceiling of the processing chamber of the inductively-coupled plasma processing apparatus. The coil-shaped high-frequency antenna 21 has a flat spiral shape, a power supply point 22 is provided at the center of the antenna, and an outer peripheral end of the antenna is connected to GND 23. ing.
A single capacitor 24 is provided in series with the high-frequency antenna 21 at a position near the GND 23.
【００１９】このようにアンテナ２１と直列にコンデン
サ２４を設置することによってアンテナ全体のインピー
ダンスを低下させ、アンテナ電位を低下させることがで
きる。By arranging the capacitor 24 in series with the antenna 21, the impedance of the entire antenna can be reduced, and the antenna potential can be reduced.
【００２０】特にコンデンサ２４は、インピーダンスの
絶対値を高周波アンテナ２１の略半分の値にすること
で、最も効果的にアンテナ電位を均等に低下することが
できる。In particular, by setting the absolute value of the impedance of the capacitor 24 to approximately half the value of the high-frequency antenna 21, the antenna potential can be most effectively reduced evenly.
【００２１】この高周波アンテナ２１を図１（ｂ）に示
すように、直線状に伸ばし、アンテナ中心部の電力供給
点２２をＡ点、中間をＢ点、ＧＮＤ２３近傍をＣ点とす
ると、Ｂ点における電位はゼロ、Ａ点及びＣ点は均等に
低下する。そして、各点の波形は図１（ｃ）に示すよう
になる。As shown in FIG. 1 (b), this high-frequency antenna 21 is extended linearly, and the power supply point 22 at the center of the antenna is point A, the middle is point B, and the vicinity of GND 23 is point C. Is zero, and the points A and C decrease uniformly. The waveform at each point is as shown in FIG.
【００２２】このため、処理装置の大型化に伴って高周
波アンテナ２１が長くなっても電力供給点２２（Ａ点）
及びＧＮＤ２３（Ｃ点）近傍の電位は低下し、高周波ア
ンテナ２１の中心部と周辺部での電界の偏りを低減でき
る。これによって誘導プラズマを均等かつ高密度に発生
させることができる。For this reason, even if the high-frequency antenna 21 becomes longer with the increase in the size of the processing apparatus, the power supply point 22 (point A)
In addition, the potential in the vicinity of the GND 23 (point C) decreases, and the bias of the electric field between the central portion and the peripheral portion of the high-frequency antenna 21 can be reduced. As a result, induction plasma can be generated uniformly and at a high density.
【００２３】図２は第２の実施形態を示し、第１の実施
形態と同一構成部分は同一番号を付して説明を省略す
る。本実施形態は、図２（ａ）は誘導結合プラズマ処理
装置の処理室の天井部に取り付けられるコイル状の高周
波アンテナ２１を示し、扁平渦巻き状で、アンテナ中心
部に電力供給点２２が設けられ、アンテナ外周端部がＧ
ＮＤ２３に接続されている。そして、この高周波アンテ
ナ２１の電力供給点２２とＧＮＤ２３との間には同アン
テナ２１と直列に複数個、本実施形態においては、中心
部から外周部に向かって６個のコンデンサ２５が設けら
れている。FIG. 2 shows a second embodiment, in which the same components as those in the first embodiment are assigned the same reference numerals and their explanation is omitted. In this embodiment, FIG. 2A shows a coiled high-frequency antenna 21 attached to a ceiling of a processing chamber of an inductively coupled plasma processing apparatus, which has a flat spiral shape and a power supply point 22 provided at the center of the antenna. , The outer edge of the antenna is G
Connected to ND23. A plurality of capacitors 25 are provided between the power supply point 22 and the GND 23 of the high-frequency antenna 21 in series with the antenna 21, and in this embodiment, six capacitors 25 are provided from the center to the outer periphery. I have.
【００２４】このようにコンデンサ２５を高周波アンテ
ナ２１の途中に複数個挿入することで、同アンテナ２１
のインピーダンスを一層低下させ、アンテナ電位も低下
かつ均等にすることができる。As described above, by inserting a plurality of capacitors 25 in the middle of the high-frequency antenna 21,
Can be further reduced, and the antenna potential can be reduced and equalized.
【００２５】この高周波アンテナ２１を図２（ｂ）に示
すように、直線状に伸ばし、アンテナ中心部の電力供給
点２２をＡ点、コンデンサ２５相互間をＢ点、Ｃ点、Ｄ
点、Ｅ点及びＦ点とすると、Ｂ点〜Ｆ点における電位は
ゼロ、各点間は均等に一層低下する。As shown in FIG. 2B, the high-frequency antenna 21 is extended linearly, and the power supply point 22 at the center of the antenna is point A, the points B, C, and D are between the capacitors 25.
Assuming the points, points E and F, the potentials at points B to F are zero, and the potential between the points is further reduced evenly.
【００２６】このため、処理装置の大型化に伴って高周
波アンテナ２１が長くなっても電力供給点２２（Ａ点）
からＧＮＤ２３（Ｃ点）までの電位は低下し、高周波ア
ンテナ２１の中心部と周辺部での電界の偏りを低減でき
る。これによって誘導プラズマを均等かつ高密度に発生
させることができる。For this reason, even if the high-frequency antenna 21 becomes longer with the increase in the size of the processing device, the power supply point 22 (point A)
To GND 23 (point C) is reduced, and the bias of the electric field between the central portion and the peripheral portion of the high-frequency antenna 21 can be reduced. As a result, induction plasma can be generated uniformly and at a high density.
【００２７】なお、前記実施形態においては、コイル状
の高周波アンテナとして扁平渦巻き状の場合について説
明したが、処理室の外周に螺旋状に巻回する高周波アン
テナにおいても、前記実施形態と同様にコンデンサを高
周波アンテナと直列に挿入することにより、同様にアン
テナのインピーダンスを低下させ、アンテナ電位を低下
かつ均等にすることができる。In the above embodiment, the case where the coiled high-frequency antenna has a flat spiral shape has been described. However, the high-frequency antenna spirally wound around the outer periphery of the processing chamber may also have the same structure as the above-described embodiment. Is inserted in series with the high-frequency antenna, the impedance of the antenna can be similarly reduced, and the antenna potential can be reduced and made uniform.
【００２８】[0028]
【発明の効果】以上説明したように、この発明によれ
ば、高周波アンテナと直列にコンデンサを挿入すること
により、アンテナインピーダンスが低下し、電位を均等
かつ低下させることができる。従って、処理装置の大型
化に伴って高周波アンテナの長さが長くなっても、アン
テナ電位を均等かつ低下させることができ、中心部と周
辺部とにおける電界の偏りをなくし、高密度のプラズマ
を発生させることができる。As described above, according to the present invention, by inserting a capacitor in series with a high-frequency antenna, the antenna impedance can be reduced, and the potential can be evenly reduced. Therefore, even if the length of the high-frequency antenna is increased due to the increase in the size of the processing device, the antenna potential can be reduced uniformly and evenly, and the bias of the electric field between the central portion and the peripheral portion can be eliminated, and high-density plasma can be generated. Can be generated.
【図１】この発明の第１の実施形態を示し、（ａ）は誘
導結合プラズマ処理装置の高周波アンテナの平面図、
（ｂ）はＧＮＤからの距離と電位との関係を示す図、
（ｃ）は波形図。FIG. 1 shows a first embodiment of the present invention, in which (a) is a plan view of a high-frequency antenna of an inductively coupled plasma processing apparatus,
(B) is a diagram showing the relationship between the distance from GND and the potential,
(C) is a waveform diagram.
【図２】この発明の第２の実施形態を示し、（ａ）は誘
導結合プラズマ処理装置の高周波アンテナの平面図、
（ｂ）は波形図。FIG. 2 shows a second embodiment of the present invention, in which (a) is a plan view of a high-frequency antenna of the inductively coupled plasma processing apparatus,
(B) is a waveform diagram.
【図３】従来の誘導結合プラズマ装置を示す概略的斜視
図。FIG. 3 is a schematic perspective view showing a conventional inductively coupled plasma device.
【図４】従来の誘導結合プラズマ装置を示す概略的斜視
図。FIG. 4 is a schematic perspective view showing a conventional inductively coupled plasma device.
【図５】従来の誘導結合プラズマ処理装置の高周波アン
テナの平面図、（ｂ）はＧＮＤからの距離と電位との関
係を示す図、（ｃ）は波形図、（ｄ）は作用説明図。5A and 5B are a plan view of a high-frequency antenna of a conventional inductively coupled plasma processing apparatus, FIG. 5B is a diagram showing a relationship between a distance from GND and a potential, FIG. 5C is a waveform diagram, and FIG.
２１…高周波アンテナ ２３…ＧＮＤ ２４…コンデンサ 21: High frequency antenna 23: GND 24: Capacitor
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/31 Ｈ０１Ｌ 21/302 Ｂ Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H01L 21/31 H01L 21/302 B
Claims (3)
の高周波アンテナを設置し、前記処理室に反応ガスを導
入し、プラズマを生成して処理室内の基板に膜を成膜ま
たは膜をエッチングする誘導結合プラズマ処理装置にお
いて、 前記高周波アンテナに、これと直列にコンデンサを設
け、アンテナインピーダンスを低下させることにより、
アンテナ電位を低下させたことを特徴とする誘導結合プ
ラズマ処理装置。1. A coil-shaped high-frequency antenna is installed in a housing constituting a processing chamber, a reaction gas is introduced into the processing chamber, plasma is generated, and a film is formed on a substrate in the processing chamber or the film is etched. In the inductively coupled plasma processing apparatus, by providing a capacitor in series with the high-frequency antenna and reducing the antenna impedance,
An inductively coupled plasma processing apparatus characterized in that an antenna potential is reduced.
対値がアンテナに対して略半分の値を持つ１個のコンデ
ンサであることを特徴とする請求項１記載の誘導結合プ
ラズマ処理装置。2. The inductively coupled plasma processing apparatus according to claim 1, wherein said capacitor is a single capacitor having an absolute value of impedance substantially half of that of an antenna.
定間隔を存して複数個設けられていることを特徴とする
請求項１記載の誘導結合プラズマ処理装置。3. The inductively coupled plasma processing apparatus according to claim 1, wherein a plurality of capacitors are provided at a predetermined interval in the high-frequency antenna.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11189024A JP2001023797A (en) | 1999-07-02 | 1999-07-02 | Inductively coupled plasma processing device |
Applications Claiming Priority (1)
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| JP11189024A JP2001023797A (en) | 1999-07-02 | 1999-07-02 | Inductively coupled plasma processing device |
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| JP2001023797A true JP2001023797A (en) | 2001-01-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396214B1 (en) * | 2001-06-19 | 2003-09-02 | 주성엔지니어링(주) | Plasma processing apparatus having parallel resonance antenna for very high frequency |
| US20080156264A1 (en) * | 2006-12-27 | 2008-07-03 | Novellus Systems, Inc. | Plasma Generator Apparatus |
| US9591738B2 (en) | 2008-04-03 | 2017-03-07 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
-
1999
- 1999-07-02 JP JP11189024A patent/JP2001023797A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396214B1 (en) * | 2001-06-19 | 2003-09-02 | 주성엔지니어링(주) | Plasma processing apparatus having parallel resonance antenna for very high frequency |
| US20080156264A1 (en) * | 2006-12-27 | 2008-07-03 | Novellus Systems, Inc. | Plasma Generator Apparatus |
| US20120247674A1 (en) * | 2006-12-27 | 2012-10-04 | Fair James A | Plasma generator apparatus |
| US8864935B2 (en) * | 2006-12-27 | 2014-10-21 | Novellus Systems, Inc. | Plasma generator apparatus |
| US9591738B2 (en) | 2008-04-03 | 2017-03-07 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
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