JP2001009700A - Polishing cloth lifetime detecting method for polishing device and device therefor - Google Patents
Polishing cloth lifetime detecting method for polishing device and device thereforInfo
- Publication number
- JP2001009700A JP2001009700A JP18710899A JP18710899A JP2001009700A JP 2001009700 A JP2001009700 A JP 2001009700A JP 18710899 A JP18710899 A JP 18710899A JP 18710899 A JP18710899 A JP 18710899A JP 2001009700 A JP2001009700 A JP 2001009700A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- life
- polishing cloth
- current
- torque
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ＣＭＰ（Chemic
al Mechanical Polishing）に用いられるポリシング装
置に係り、特に研磨布の寿命を検出する方法および装置
に関する。TECHNICAL FIELD The present invention relates to a CMP (Chemic
More particularly, the present invention relates to a method and an apparatus for detecting the life of a polishing pad.
【０００２】[0002]
【従来の技術】 従来から用いられている、シリコンの
熱酸化膜を堆積させたシリコンウエーハのＣＭＰ加工用
のポリシング装置を図５で説明すると、回転駆動源を有
するポリシングヘッド１にウエーハ２をチャックし、上
面に研磨布４を貼付した回転定盤３上に搬送した後、ス
ラリー５を回転定盤３上に供給し、ポリシングヘッド１
を研磨布４に押し付けながら共に回転させて、ウエーハ
２上に形成された層間絶縁膜や金属膜のポリシング加工
を行う。2. Description of the Related Art A conventional polishing apparatus for CMP processing of a silicon wafer on which a silicon thermal oxide film is deposited is described with reference to FIG. 5. A wafer 2 is chucked to a polishing head 1 having a rotation drive source. Then, after being conveyed onto the rotating surface plate 3 on which the polishing cloth 4 is adhered, the slurry 5 is supplied onto the rotating surface plate 3, and the polishing head 1
Are rotated together while pressing against the polishing cloth 4 to perform polishing of the interlayer insulating film and the metal film formed on the wafer 2.
【０００３】また、研磨布４の目詰まりによる研磨能率
の低下を防止するため、回転定盤３に対しポリシングヘ
ッド１の反対位置にドレスコラム７を設け、ドレスコラ
ム７に設けたドレスヘッド６を回転定盤３の上面に向
け、回転する研磨布４にドレスヘッド６を回転させなが
ら押圧し、前記研磨加工と同時或いは研磨加工終了時に
研磨布４のドレッシングを行い、常に目詰まりなど問題
の無い研磨布表面での加工が行える様になっている。
尚、ドレスヘッド６の加工面は、金属ベース上に、シリ
コンやスラリー５中の砥粒より硬い、例えばダイヤモン
ド等の砥粒を付着させたものである。In order to prevent a decrease in polishing efficiency due to clogging of the polishing pad 4, a dress column 7 is provided at a position opposite to the polishing head 1 with respect to the rotary platen 3, and the dress head 6 provided on the dress column 7 is provided. The dressing head 6 is pressed against the rotating polishing pad 4 while rotating it toward the upper surface of the rotating platen 3, and the dressing of the polishing pad 4 is performed simultaneously with or at the end of the polishing process, so that there is no problem such as clogging. Processing on the polishing cloth surface can be performed.
The processed surface of the dress head 6 is obtained by adhering abrasive grains such as diamond, which are harder than the abrasive grains in the silicon or the slurry 5, on a metal base.
【０００４】ところで従来使用されてきたＣＭＰ用の研
磨布４は、ウエーハ全面の均一な研磨加工を行なうた
め、図６（ａ）の様にウエーハ２の中心近傍へのスラリ
ー５の回り込みを考慮して設けられた格子状の溝８や、
図示しないが螺旋状の溝や穴加工が施されており、更に
同時にシリコンウエーハ上に形成されたデバイス表面
の、微少な段差を除去する局所的な平坦化を行なうた
め、図６（ｂ）に示される様に、研磨布の加工面を硬質
層９とし裏面を軟質層１０とする２層になっている。[0006] By the way, the conventional polishing cloth 4 for CMP performs uniform polishing of the entire surface of the wafer, so that the slurries of the slurry 5 near the center of the wafer 2 as shown in FIG. Lattice-shaped grooves 8 provided by
Although not shown, spiral grooves and holes are formed, and at the same time, local flattening for removing minute steps on the device surface formed on the silicon wafer is performed. As shown in the figure, the polishing cloth has two layers including a hard layer 9 on the processed surface and a soft layer 10 on the back surface.
【０００５】この研磨布４をドレッサー６によりドレッ
シングを行なうと、硬質層９の表面が１μｍ／ｍｉｎ以
下の微少量ではあるが徐々に削り取られて摩耗してゆく
ため、研磨布４に設けた溝８や穴の深さが徐々に減少
し、ある深さ以下になると、スラリー５がウエーハ２の
中心近傍へ到達する量が減少したり、また研磨屑の排出
が悪化する等により、加工能率の低下や加工量の均一性
の悪化があった。When the polishing pad 4 is dressed with a dresser 6, the surface of the hard layer 9 is gradually scraped off, although it is a very small amount of 1 μm / min or less, and the surface thereof is worn. When the depth of the hole 8 or the hole gradually decreases to a certain depth or less, the amount of the slurry 5 reaching the vicinity of the center of the wafer 2 decreases, and the discharge of the polishing debris deteriorates. There was a decrease and a deterioration in the uniformity of the processing amount.
【０００６】また、複合的な要因として、ドレッシング
により研磨布４の硬質層９が薄くなると、硬質層９と軟
質層１０の厚さのバランスがくずれるため研磨布４全体
の剛性が変化し、加工したウエーハ２の平坦性や均一性
が著しく悪化することもあった。As a compound factor, when the hard layer 9 of the polishing cloth 4 is thinned by dressing, the balance between the thickness of the hard layer 9 and the thickness of the soft layer 10 is lost, so that the rigidity of the entire polishing cloth 4 changes, and In some cases, the flatness and uniformity of the resulting wafer 2 are significantly deteriorated.
【０００７】[0007]
【発明が解決しようとする課題】上記研磨布４の摩耗の
他、研磨布４の製造上および材料の不均一性、即ち厚
さ、硬さ或いは溝深さ等のバラツキや、更にはスラリー
５の流量変化やポリシングヘッド１の押圧力の変化等不
確定要素が加わり、従って研磨布４の交換時期を、ドレ
ッシングの総加算量や総加算時間だけで判断することが
非常に困難であった。このため実際にはウエーハの除去
加工量の低下や均一性の悪化から、大凡の判断で研磨布
４の寿命を決め、交換を行なっていた。In addition to the abrasion of the polishing pad 4, the polishing pad 4 is not manufactured and the material is not uniform, ie, the thickness, hardness, groove depth, etc., and the slurry 5 Therefore, it is very difficult to judge the replacement time of the polishing pad 4 only by the total amount of dressing and the total time. For this reason, in practice, the life of the polishing pad 4 has been determined by rough judgment and exchanged because of the reduction in the amount of removal processing of the wafer and the deterioration of uniformity.
【０００８】従って、本発明の目的は、研磨布の状態を
定量的に検知し、その判断により研磨布の寿命を決定す
る方法および装置を提供することにある。Accordingly, it is an object of the present invention to provide a method and apparatus for quantitatively detecting the state of a polishing pad and determining the life of the polishing pad based on the determination.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
の第一の発明は、被加工物を保持して回転するポリシン
グヘッドと、同ポリシングヘッドに対向して配置され、
表面に研磨布を貼付した回転定盤とを接触押圧させ、回
転運動を行いながらポリシングを行うポリシング工程
中、前記ポリシングヘッドの回転トルクを検出し、前記
回転トルクの変動幅が予め設定した値を超えたとき、前
記研磨布の寿命到来と判定することを特徴とするポリシ
ング装置の研磨布寿命検出方法にある。According to a first aspect of the present invention, there is provided a polishing head which rotates while holding a workpiece, and is disposed opposite to the polishing head.
During the polishing step of performing polishing while performing a rotary motion, the rotational torque of the polishing head is detected by contacting and pressing a rotating platen having a polishing cloth adhered to the surface, and the fluctuation range of the rotational torque is a predetermined value. A polishing cloth life detecting method for a polishing apparatus, characterized in that it is determined that the life of the polishing cloth has expired when the time has exceeded.
【００１０】この発明の特徴は、加工条件を一定とする
と、ポリシングヘッドの回転トルクの値が、研磨布が新
しい時は変動幅が小さく、研磨布を使い込んでくるとそ
の変動幅が次第に大きくなる傾向が有り、従って研磨布
が使用出来なくなった時の変動幅のデータを採ってお
き、その最低値を超えた時を研磨布の寿命到来とするも
のである。The feature of the present invention is that when the processing conditions are fixed, the value of the rotational torque of the polishing head has a small fluctuation range when the polishing cloth is new, and the fluctuation width gradually increases when the polishing cloth is used. There is a tendency, therefore, data of the fluctuation range when the polishing cloth cannot be used is taken, and when the minimum value is exceeded, the life of the polishing cloth is reached.
【００１１】第二の発明は、前記回転トルクの検出を、
ポリシングヘッドの回転駆動用電動機の電流で行うこと
を特徴とする請求項１記載のポリシング装置の研磨布寿
命検出方法にある。電動機の電流値は負荷のトルクに比
例するので、実際の処理は電流で行なう方が後処理に都
合が良い。In a second aspect of the present invention, the detection of the rotational torque includes:
2. The method for detecting the life of a polishing cloth of a polishing apparatus according to claim 1, wherein the polishing is performed by a current of a motor for rotating a polishing head. Since the current value of the motor is proportional to the torque of the load, it is more convenient to perform the actual processing with the current for the post-processing.
【００１２】第三の発明は、被加工物を保持して回転す
るポリシングヘッドと同ポリシングヘッドに対向して配
置され、表面に研磨布を貼付した回転定盤とを備えるポ
リシング装置において、前記ポリシングヘッドの回転ト
ルク検出手段と、同回転トルクの変動を用いて前記研磨
布の寿命を判定する寿命判定手段とを設けたことを特徴
とするポリシング装置にある。According to a third aspect of the present invention, there is provided a polishing apparatus comprising: a polishing head which rotates while holding a workpiece; and a rotary platen which is disposed to face the polishing head and has a polishing cloth adhered to a surface thereof. The polishing apparatus is provided with a head rotational torque detecting means, and a life determining means for determining the life of the polishing cloth using the fluctuation of the rotational torque.
【００１３】これは、研磨布が使用限度を超えると、ポ
リシングヘッドの回転トルクの変動が大きくなることを
利用し、研磨布の寿命検知を、ポリシングヘッドの回転
トルク検出手段と研磨布の寿命判定手段とを設けて可能
にするものである。This is based on the fact that when the polishing cloth exceeds the usage limit, the fluctuation of the rotation torque of the polishing head becomes large, and the life detection of the polishing cloth is performed by the rotation torque detection means of the polishing head and the life judgment of the polishing cloth. And means are provided.
【００１４】第四の発明は、前記回転トルク検出手段
が、前記ポリシングヘッドの回転駆動用電動機における
電流検出手段であることを特徴とする請求項３記載のポ
リシング装置にある。これは回転トルク検出手段とし
て、回転トルクと駆動用電動機における電流が比例関係
にあることを利用し、トルクより電流の方が処理をし易
いためである。ただし電動機の電流にはノイズ等の高周
波が多いので、高周波を除去した後の状態で処理するこ
とが好ましい。According to a fourth aspect of the present invention, in the polishing apparatus according to the third aspect, the rotational torque detecting means is a current detecting means in a motor for driving the rotation of the polishing head. This is because the rotation torque detecting means utilizes the fact that the rotation torque and the current in the driving motor are in a proportional relationship, and the current is easier to process than the torque. However, since the electric current of the electric motor has many high frequencies such as noise, it is preferable to process the electric current after removing the high frequencies.
【００１５】第五の発明は、前記寿命判定手段が、前記
研磨布を使用し加工中の前記ポリシングヘッドの回転駆
動用電動機における電流の変動幅と、予め設定した変動
幅とを比較する研磨布寿命判断回路と、前記電動機にお
ける電流の変動幅が前記予め設定した変動幅より大きく
なった時、研磨布の寿命到来と決定する寿命判定回路と
から成ることを特徴とする請求項３および請求項４のい
ずれか一つに記載のポリシング装置にある。即ち、ポリ
シングヘッドの回転トルクの値が、研磨布が新しい時は
変動が小さく、研磨布を使い込んでくるとその変動が次
第に大きくなる傾向が有り、従って回転トルクを電動機
の電流幅に置き換え、その変動幅が設定電流幅をこえた
ときに、研磨布の寿命と判定する手段を設けるものであ
る。In a fifth aspect of the present invention, the life determining means compares the fluctuation range of a current in the motor for driving the rotation of the polishing head using the polishing cloth with a predetermined fluctuation range. 4. A life determining circuit, comprising: a life determining circuit for determining that the life of the polishing pad has come when the fluctuation range of the current in the electric motor becomes larger than the preset fluctuation range. 4. The polishing apparatus according to any one of 4. That is, the value of the rotational torque of the polishing head has a small variation when the polishing cloth is new, and the variation tends to gradually increase when the polishing cloth is used, so that the rotational torque is replaced with the current width of the electric motor, A means is provided for determining the life of the polishing pad when the fluctuation width exceeds the set current width.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施の形態を例示
して説明する。図１は、ポリシング装置における本発明
の研磨布寿命を判定する装置のブロック図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described by way of example. FIG. 1 is a block diagram of an apparatus for determining the life of a polishing cloth according to the present invention in a polishing apparatus.
【００１７】即ち、図１の構成を説明すると、トルク検
出手段２０は、ポリッシングヘッドの駆動用電動機２１
と、その電動機２１の電流検出回路２２と、同検出電流
をサンプリングするサンプリング回路２３と、そのサン
プリング波形から必要な信号を取り出す信号処理回路２
４とから成っている。また、研磨布寿命判定手段３０
は、寿命―トルク入力回路３１と、トルク―電流変換回
路３２と、研磨布寿命判断回路３３と、寿命判定回路３
４とから成っている。That is, the configuration of FIG. 1 will be described. The torque detecting means 20 is a motor 21 for driving a polishing head.
A current detection circuit 22 of the electric motor 21, a sampling circuit 23 for sampling the detection current, and a signal processing circuit 2 for extracting a necessary signal from the sampling waveform.
It consists of four. Further, the polishing cloth life determining means 30
Are a life-torque input circuit 31, a torque-current conversion circuit 32, a polishing cloth life judgment circuit 33, and a life judgment circuit 3.
It consists of four.
【００１８】次に、図１の作用について説明すると、ト
ルク検出手段２０は、ポリシングヘッドの回転トルクが
その駆動用電動機２１の電流に比例することから、先ず
電動機２１の電流検出回路２２を設け、前記回転トルク
を電流として検知し、次にサンプリング回路２３で元の
電動機電流のアナログ値をディジタル値に変換し複数個
を平均化すると、電動機２１の電流に多く含まれるノイ
ズ等の高周波成分が除去され、この電動機電流の実効値
を抽出出来る。Next, the operation of FIG. 1 will be described. The torque detecting means 20 first includes a current detecting circuit 22 of the electric motor 21 because the rotational torque of the polishing head is proportional to the current of the driving electric motor 21. The rotation torque is detected as a current, and then the analog value of the original motor current is converted into a digital value by the sampling circuit 23 and a plurality of values are averaged, whereby high-frequency components such as noise that are included in the current of the motor 21 are removed. Thus, the effective value of the motor current can be extracted.
【００１９】この電動機電流の実効値が前記トルクに対
応し、研磨布４が摩耗してゆくと前記トルクの変動幅が
大きくなってゆくので、前記電動機電流の実効値の変動
幅も大きくなってゆくから、信号処理回路２４では電動
機電流の実効値の変動幅を抽出する。この変動幅の抽出
は、先ずサンプリング回路２３で除去仕切れなかったノ
イズ等を除去して波形を成形した後、例えば単位時間内
におけるトルク変動の最大値と最小値の差、或いは前記
電動機電流の実効値の波形を更にサンプリングし、その
平均値との差による平均二乗法等で行なう。The effective value of the motor current corresponds to the torque, and as the polishing pad 4 wears, the fluctuation range of the torque increases. Therefore, the fluctuation range of the effective value of the motor current also increases. Therefore, the signal processing circuit 24 extracts the fluctuation range of the effective value of the motor current. This variation range is extracted by first removing a noise or the like that has not been removed by the sampling circuit 23 to form a waveform, and then, for example, calculating the difference between the maximum value and the minimum value of the torque variation within a unit time or the effective value of the motor current. The waveform of the value is further sampled, and the sampling is performed by a mean square method based on a difference from the average value.
【００２０】次に図1の研磨布寿命判定手段３０につい
て説明すると、研磨布４の寿命に対応するトルクの変動
幅を入力する寿命―トルク入力回路３１では、前記抽出
方法に対応し、データを基に設定された研磨布寿命に対
応するトルク変動幅の入力値は、次のトルク―電流変換
回路３２で電流変動幅に変換され、次の研磨布寿命判断
回路３３でトルク検出手段２０からの出力である前記電
動機電流の実効値の変動幅と比較される。Next, a description will be given of the polishing cloth life determining means 30 shown in FIG. 1. A life-torque input circuit 31 for inputting a fluctuation range of a torque corresponding to the life of the polishing cloth 4 corresponds to the above-mentioned extraction method and outputs data. The input value of the torque fluctuation width corresponding to the polishing cloth life set based on the current value is converted into the current fluctuation width by the next torque-current conversion circuit 32, and the next polishing cloth life judgment circuit 33 outputs the torque fluctuation width from the torque detecting means 20. The output is compared with the fluctuation range of the effective value of the motor current.
【００２１】ここで電動機電流の実効値の変動幅が、ト
ルク―電流変換回路３２での電流幅の値より大きくなる
と、次の寿命判定回路３４により研磨布寿命として指示
がでる。以上が研磨布寿命を検知するブロック図におけ
る各工程の説明であるが、これらの工程における作用と
実際の現象について、以下実験結果を基に説明する。Here, when the fluctuation range of the effective value of the motor current becomes larger than the value of the current width in the torque-current conversion circuit 32, the next life determination circuit 34 gives an instruction as the polishing cloth life. The above is the description of each step in the block diagram for detecting the life of the polishing pad. The operation and actual phenomena in these steps will be described below based on experimental results.
【００２２】図２は多数のシリコンウエーハに１μｍの
厚さの酸化膜を形成した後、同じ研磨布を用い、同じ加
工条件で前記シリコンウエーハをそれぞれ２分間ポリシ
ング加工し、それぞれのウエーハについて除去厚さを光
学式のプローブで各数十点測定し、その平均値を縦軸に
除去厚さ、横軸に加工したウエーハ枚数を１０枚毎にデ
ータ採取しグラフ上にプロットしたものである。FIG. 2 shows that after forming an oxide film having a thickness of 1 μm on a large number of silicon wafers, the silicon wafers are polished for 2 minutes under the same processing conditions using the same polishing cloth, and the removal thickness of each wafer is removed. The measured values were measured at several tens of points using an optical probe, and the average value was plotted on a graph by taking the data on the vertical axis for the removal thickness and the horizontal axis for the number of processed wafers every 10 wafers.
【００２３】図３（ａ）は、図２の７０枚目のウエーハ
に関し図１に示したトルク検出手段における電流検出回
路の実際の出力波形を示しており、縦軸はポリシングヘ
ッド用電動機の電流をトルクに換算したものであり、横
軸は時間で１目盛りが２０秒である。図３（ｂ）は、図
２の１３０枚目のウエーハに関する同様な出力波形を示
す。FIG. 3 (a) shows the actual output waveform of the current detecting circuit in the torque detecting means shown in FIG. 1 for the 70th wafer in FIG. 2, and the vertical axis shows the current of the motor for the polishing head. Is converted to torque, and the horizontal axis represents time and one division is 20 seconds. FIG. 3B shows a similar output waveform for the 130th wafer in FIG.
【００２４】図４（ａ）は、図２の７０枚目のウエーハ
に関し図１に示したトルク検出手段におけるサンプリン
グ回路の出力波形を示しており、縦軸はポリシングヘッ
ド用電動機の電流をトルクに換算したものであり、横軸
は時間で１目盛りが２０秒である。図４（ｂ）は、図２
の１３０枚目のウエーハに関する同様な出力波形を示
す。FIG. 4A shows the output waveform of the sampling circuit in the torque detecting means shown in FIG. 1 for the 70th wafer in FIG. 2, and the vertical axis shows the current of the motor for the polishing head as torque. The horizontal axis is time and one division is 20 seconds. FIG.
Shows a similar output waveform for the 130th wafer.
【００２５】この結果、図２に示される様に、ポリシン
グの初期と除去厚さが殆ど変わらない７０枚目の図４
（ａ）では殆どトルクの変動幅（ｄ１）は小さいが、ポ
リシングの初期に対し除去厚さが低下してきた１３０枚
目の図４（ｂ）では、周期が約２０秒の超低周波の振
幅、即ちトルクの変動幅（ｄ２）が大きく生じている。As a result, as shown in FIG. 2, the 70th sheet shown in FIG.
In FIG. 4A, the fluctuation width (d1) of the torque is almost small, but in FIG. 4B of the 130th sheet whose removal thickness has decreased from the beginning of polishing, the amplitude of the very low frequency having a period of about 20 seconds is shown. That is, the fluctuation range (d2) of the torque is large.
【００２６】従って、初期の除去厚さに対し許容除去厚
さを設定すると、前記一連のポリシングテストから大凡
の研磨布寿命に対する前記変動幅が設定出来、更に初期
の変動幅について、前記一連のポリシングテスト結果
と、新条件におけるテスト結果とを比較することで、更
に詳細な研磨布寿命に対する前記変動幅を設定すること
が出来る。Therefore, when the allowable removal thickness is set with respect to the initial removal thickness, the fluctuation range with respect to the approximate polishing cloth life can be set from the series of polishing tests. By comparing the test result with the test result under the new condition, it is possible to set a more detailed variation range with respect to the polishing cloth life.
【００２７】尚、図４（ａ）と図４（ｂ）のトルク平均
値の比較では、図４（ｂ）の方が低くなっており、この
原因が研磨布４の摩耗による抵抗の減少と考えられ、従
って前記ポリシングヘッドのトルク変動に、このトルク
平均値の比較を加味すれば、更に正確な研磨布の寿命を
知ることが出来る。In comparison of the average torque values of FIGS. 4 (a) and 4 (b), FIG. 4 (b) shows a lower value. It is conceivable, therefore, that if the average of the torque is compared with the fluctuation of the torque of the polishing head, the life of the polishing pad can be known more accurately.
【００２８】[0028]
【発明の効果】以上述べたように本発明によれば最適な
交換時期がわかるので、研磨布の早期交換における無駄
の排除および研磨布の遅過ぎる交換による製品不良の低
減を図ることが出来る。As described above, according to the present invention, since the optimum replacement time can be determined, it is possible to eliminate waste in early replacement of the polishing cloth and to reduce defective products due to replacement of the polishing cloth too late.
【図１】本発明の処理工程を示すブロック図。FIG. 1 is a block diagram showing processing steps of the present invention.
【図２】同一研磨布を用いウエーハにポリシングを行っ
た時、単位時間におけるウエーハの除去量と枚数との関
係を示す図。FIG. 2 is a diagram showing the relationship between the amount of wafer removal per unit time and the number of wafers when polishing is performed on the wafer using the same polishing cloth.
【図３】図２のウエーハ加工時におけるトルクの変動を
示す図であって、（ａ）は７０枚目のウエーハ、（ｂ）
は１３０枚目のウエーハにそれぞれ対応する図。3A and 3B are diagrams showing a change in torque during the processing of the wafer shown in FIG. 2, wherein FIG. 3A shows the 70th wafer, and FIG.
FIG. 3 is a diagram corresponding to each of the 130th wafer.
【図４】図３のトルクの変動を示す波形にサンプリング
処理をした図であって、（ａ）は図３（ａ）に対応し、
（ｂ）は図３（ｂ）に対応する図。4A and 4B are diagrams in which a sampling process is performed on a waveform indicating a change in torque in FIG. 3, wherein FIG. 4A corresponds to FIG.
FIG. 3B is a diagram corresponding to FIG.
【図５】従来のポリシング装置構成図。FIG. 5 is a configuration diagram of a conventional polishing apparatus.
【図６】研磨布の加工面における溝の一例を示す図であ
って、（ａ）は全体を示す図、（ｂ）は（ａ）のＡ部の
拡大断面斜視図。FIGS. 6A and 6B are views showing an example of grooves on the processing surface of the polishing cloth, wherein FIG. 6A is a view showing the entirety, and FIG. 6B is an enlarged sectional perspective view of a portion A in FIG.
１ ポリシングヘッド ２ ウエーハ ３ 回転定盤 ４ 研磨布 ５ スラリー ６ ドレスヘッド ７ ドレスコラム ８ 溝 ９ 硬質層 １０ 軟質層 ２０ トルク検出手段 ２１ ポリッシングヘッドの駆動用電動機 ２２ 電流検出回路 ２３ サンプリング回路 ２４ 信号処理回路 ３０ 研磨布寿命判定手段 ３１ 寿命―トルク入力回路 ３２ トルク―電流変換回路 ３３ 研磨布寿命判断回路 ３４ 寿命判定回路 DESCRIPTION OF SYMBOLS 1 Polishing head 2 Wafer 3 Rotating surface plate 4 Polishing cloth 5 Slurry 6 Dress head 7 Dress column 8 Groove 9 Hard layer 10 Soft layer 20 Torque detecting means 21 Motor for driving polishing head 22 Current detecting circuit 23 Sampling circuit 24 Signal processing circuit Reference Signs List 30 polishing cloth life judging means 31 life-torque input circuit 32 torque-current conversion circuit 33 polishing cloth life judgment circuit 34 life judgment circuit
Claims (5)
ヘッドと、同ポリシングヘッドに対向して配置され、表
面に研磨布を貼付した回転定盤とを接触押圧させ、回転
運動を行いながらポリシングを行うポリシング工程中、
前記ポリシングヘッドの回転トルクを検出し、前記回転
トルクの変動幅が予め設定した値を超えたとき、前記研
磨布の寿命到来と判定することを特徴とするポリシング
装置の研磨布寿命検出方法。1. A polishing head that holds and rotates a workpiece and a rotating platen that is disposed opposite to the polishing head and has a polishing cloth adhered to the surface thereof, and presses the same so as to perform polishing while rotating. During the polishing process,
A polishing cloth life detecting method for a polishing apparatus, comprising: detecting a rotation torque of the polishing head; and determining that the life of the polishing cloth has come when the fluctuation range of the rotation torque exceeds a preset value.
グヘッドの回転駆動用電動機の電流で行うことを特徴と
する請求項１記載のポリシング装置の研磨布寿命検出方
法。2. The method according to claim 1, wherein the detection of the rotational torque is performed by a current of a motor for driving the rotation of the polishing head.
ヘッドと同ポリシングヘッドに対向して配置され、表面
に研磨布を貼付した回転定盤とを備えるポリシング装置
において、前記ポリシングヘッドの回転トルク検出手段
と、同回転トルクの変動を用いて前記研磨布の寿命到来
を判定する寿命判定手段とを設けたことを特徴とするポ
リシング装置。3. A polishing apparatus, comprising: a polishing head that rotates while holding a workpiece; and a rotary platen that is disposed to face the polishing head and has a polishing cloth adhered to a surface thereof. A polishing apparatus, comprising: a detecting unit; and a life determining unit that determines the end of the life of the polishing pad using the fluctuation of the rotation torque.
ングヘッドの回転駆動用電動機における電流検出手段で
あることを特徴とする請求項３記載のポリシング装置。4. The polishing apparatus according to claim 3, wherein said rotational torque detecting means is a current detecting means in a motor for driving the rotation of said polishing head.
し加工中の前記ポリシングヘッドの回転駆動用電動機に
おける電流の変動幅と、予め設定した変動幅とを比較す
る研磨布寿命判断回路と、前記電動機における電流の変
動幅が前記予め設定した変動幅より大きくなった時、研
磨布の寿命到来と決定する寿命判定回路とから成ること
を特徴とする請求項３または４記載のポリシング装置。5. A polishing cloth life judging circuit for comparing a fluctuation width of a current in a motor for driving a rotation of the polishing head during processing using the polishing cloth with a predetermined fluctuation width. 5. The polishing apparatus according to claim 3, further comprising a life determining circuit for determining that the life of the polishing pad has come when the fluctuation width of the current in said electric motor becomes larger than said predetermined fluctuation width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18710899A JP2001009700A (en) | 1999-07-01 | 1999-07-01 | Polishing cloth lifetime detecting method for polishing device and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18710899A JP2001009700A (en) | 1999-07-01 | 1999-07-01 | Polishing cloth lifetime detecting method for polishing device and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001009700A true JP2001009700A (en) | 2001-01-16 |
Family
ID=16200250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18710899A Pending JP2001009700A (en) | 1999-07-01 | 1999-07-01 | Polishing cloth lifetime detecting method for polishing device and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001009700A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093192A (en) * | 2004-09-21 | 2006-04-06 | Disco Abrasive Syst Ltd | Wafer polishing apparatus and wafer polishing method |
| JP2010129854A (en) * | 2008-11-28 | 2010-06-10 | Disco Abrasive Syst Ltd | Method of removing chamfering portion of wafer, and grinding device |
| JP2012056029A (en) * | 2010-09-09 | 2012-03-22 | Ebara Corp | Polishing apparatus |
| JP2012245589A (en) * | 2011-05-27 | 2012-12-13 | Fujitsu Semiconductor Ltd | Manufacturing method of semiconductor device, and chemical mechanical polishing device |
| CN117260407A (en) * | 2023-11-20 | 2023-12-22 | 铭扬半导体科技(合肥)有限公司 | Detection method of polishing equipment |
-
1999
- 1999-07-01 JP JP18710899A patent/JP2001009700A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093192A (en) * | 2004-09-21 | 2006-04-06 | Disco Abrasive Syst Ltd | Wafer polishing apparatus and wafer polishing method |
| JP4615275B2 (en) * | 2004-09-21 | 2011-01-19 | 株式会社ディスコ | Wafer polishing apparatus and wafer polishing method |
| JP2010129854A (en) * | 2008-11-28 | 2010-06-10 | Disco Abrasive Syst Ltd | Method of removing chamfering portion of wafer, and grinding device |
| JP2012056029A (en) * | 2010-09-09 | 2012-03-22 | Ebara Corp | Polishing apparatus |
| CN102398210A (en) * | 2010-09-09 | 2012-04-04 | 株式会社荏原制作所 | Polishing apparatus |
| CN102398210B (en) * | 2010-09-09 | 2015-03-25 | 株式会社荏原制作所 | Polishing apparatus |
| JP2012245589A (en) * | 2011-05-27 | 2012-12-13 | Fujitsu Semiconductor Ltd | Manufacturing method of semiconductor device, and chemical mechanical polishing device |
| CN117260407A (en) * | 2023-11-20 | 2023-12-22 | 铭扬半导体科技(合肥)有限公司 | Detection method of polishing equipment |
| CN117260407B (en) * | 2023-11-20 | 2024-03-12 | 铭扬半导体科技(合肥)有限公司 | Detection method of polishing equipment |
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