JP2001007434A - Light-emitting device, light-emitting element, semiconductor device and semiconductor element - Google Patents
Light-emitting device, light-emitting element, semiconductor device and semiconductor elementInfo
- Publication number
- JP2001007434A JP2001007434A JP17103599A JP17103599A JP2001007434A JP 2001007434 A JP2001007434 A JP 2001007434A JP 17103599 A JP17103599 A JP 17103599A JP 17103599 A JP17103599 A JP 17103599A JP 2001007434 A JP2001007434 A JP 2001007434A
- Authority
- JP
- Japan
- Prior art keywords
- type electrode
- semiconductor
- heat sink
- electrode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体レーザ、発光
ダイオード等がヒートシンクに取り付けられた発光装
置、この発光装置に適した発光素子、半導体素子がヒー
トシンクに取り付けられた半導体装置、及びこの半導体
装置に適した半導体素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device having a semiconductor laser, a light emitting diode or the like mounted on a heat sink, a light emitting element suitable for the light emitting device, a semiconductor device having a semiconductor element mounted on a heat sink, and a semiconductor device. It relates to a suitable semiconductor device.
【０００２】[0002]
【従来の技術】近年、高密度・大容量の光ディスクシス
テムに用いられる記録或いは再生用の光源として、青色
又は紫色の光を発するＧａＮ系の半導体レーザ装置の研
究開発が行われている。2. Description of the Related Art In recent years, research and development of a GaN-based semiconductor laser device that emits blue or violet light has been conducted as a recording or reproducing light source used in a high-density, large-capacity optical disk system.
【０００３】このＧａＮ系の半導体レーザ装置において
も、従来の赤外や赤色の光を発する半導体レーザ装置の
場合と同様に、高い信頼性を得るためには、素子の発熱
部である発光部がヒートシンクに近づくように、基板を
上側（ヒートシンクとは反対側）にしてヒートシンクに
固定するジャンクションダウンによる組立を行い、レー
ザ素子からの放熱を十分に行う必要がある。In this GaN-based semiconductor laser device, as in the case of a conventional semiconductor laser device that emits infrared or red light, in order to obtain high reliability, a light-emitting portion, which is a heating portion of the element, is required. It is necessary to perform junction-down assembly in which the substrate is fixed to the heat sink with the substrate facing upward (opposite to the heat sink) so as to approach the heat sink, and heat radiation from the laser element needs to be sufficiently performed.
【０００４】しかしながら、ＧａＮ系の半導体レーザ装
置の半導体レーザ素子は、多くの場合、絶縁性のサファ
イア基板上に結晶成長を行い、発光層を形成しているた
め、従来の赤外や赤色の光を発するＧａＡｓ基板等の半
導体基板を用いた半導体レーザ装置のように、ｐ型電極
およびｎ型電極を基板の上面側と下面側とに別々に設け
ることは出来難い構造である。However, in many cases, a semiconductor laser element of a GaN-based semiconductor laser device grows a crystal on an insulating sapphire substrate and forms a light-emitting layer. It is difficult to separately provide the p-type electrode and the n-type electrode on the upper surface side and the lower surface side of the substrate as in a semiconductor laser device using a semiconductor substrate such as a GaAs substrate that emits light.
【０００５】このようなＧａＮ系の半導体レーザ素子で
は、図７に示すように、サファイア基板１上に、ＡｌＧ
ａＮからなるバッファ層２、ｉ型ＧａＮ層３、ｎ型Ｇａ
Ｎ層４、ｎ型ＩｎＧａＮからなるクラック防止層５、ｎ
型ＡｌＧａＮからなる第１クラッド層６、多重量子井戸
構造の発光層７、ｐ型ＡｌＧａＮからなる第２クラッド
層８、ｐ型ＧａＮからなるｐ型コンタクト層９が順に積
層され、更に、反応性イオンエッチング又は反応性イオ
ンビームエッチングにより第２クラッド層８の所定の深
さまで除去されてストライプ状のリッジ部１０が形成さ
れ、同様のエッチングによりｎ型ＧａＮ層４の所定の深
さまで除去されて電極形成面１１が形成されている。ま
た、リッジ部１０の両側面、第２クラッド層８の平坦
面、第２クラッド層８の側面からｎ型ＧａＮ層４の側
面、及びｎ型ＧａＮ層４の電極形成面のうち実際に電極
が形成される部分を除いた部分にはＳｉＯ2等よりなる
絶縁膜１２が形成され、ｐ型コンタクト層９の上面には
ｐ型電極（第１導電型電極）１３が形成され、ｎ型Ｇａ
Ｎ層４の電極形成面１１にはｎ型電極（第２導電型電
極）１４が形成されている。In such a GaN-based semiconductor laser device, as shown in FIG.
aN buffer layer 2, i-type GaN layer 3, n-type Ga
N layer 4, crack preventing layer 5 made of n-type InGaN, n
A first cladding layer 6 made of p-type AlGaN, a light emitting layer 7 having a multiple quantum well structure, a second cladding layer 8 made of p-type AlGaN, and a p-type contact layer 9 made of p-type GaN are sequentially stacked. Stripping is performed to a predetermined depth of the second cladding layer 8 by etching or reactive ion beam etching to form a stripe-shaped ridge portion 10, and is removed to a predetermined depth of the n-type GaN layer 4 by similar etching to form an electrode. Surface 11 is formed. The electrodes are actually formed on both sides of the ridge portion 10, the flat surface of the second cladding layer 8, the side surface of the n-type GaN layer 4 from the side of the second cladding layer 8, and the electrode forming surface of the n-type GaN layer 4. An insulating film 12 made of SiO 2 or the like is formed on a portion excluding the portion to be formed, a p-type electrode (first conductivity type electrode) 13 is formed on an upper surface of the p-type contact layer 9, and an n-type Ga
An n-type electrode (second conductivity type electrode) 14 is formed on the electrode formation surface 11 of the N layer 4.
【０００６】そして、このような図７に示すような半導
体レーザ素子では、ｐ型電極１３、ｎ型電極１４ともサ
ファイア基板１の上面側に形成されているため、ジャン
クションダウンによりヒートシンクに取り付けることが
困難である。In such a semiconductor laser device as shown in FIG. 7, since both the p-type electrode 13 and the n-type electrode 14 are formed on the upper surface side of the sapphire substrate 1, they can be attached to the heat sink by junction down. Have difficulty.
【０００７】このため、図８に示すように、半導体レー
ザ素子をジャンクションアップによりヒートシンク２１
に取り付けられる場合が多く、放熱を十分に行えないと
いう問題がある。尚、図８において、１５はバッファ層
２、ｉ型ＧａＮ層３、ｎ型ＧａＮ層４、クラック防止層
５、第１クラッド層６、発光層７、第２クラッド層８、
ｐ型コンタクト層９からなる半導体層、２２はヒートシ
ンク側の電極部、３１、３２はＡｕからなるワイヤー、
３３はＣｕ、Ｆｅ等の導電性金属よりなるステム（基
台）である。For this reason, as shown in FIG. 8, the semiconductor laser device is mounted on the heat sink 21 by junction-up.
In many cases, there is a problem that heat cannot be sufficiently released. In FIG. 8, reference numeral 15 denotes a buffer layer 2, an i-type GaN layer 3, an n-type GaN layer 4, a crack preventing layer 5, a first cladding layer 6, a light emitting layer 7, a second cladding layer 8,
a semiconductor layer composed of the p-type contact layer 9, 22 an electrode part on the heat sink side, 31 and 32 wires made of Au,
33 is a stem (base) made of a conductive metal such as Cu or Fe.
【０００８】また、図７に示すような半導体レーザ素子
を、ジャンクションダウンによりヒートシンクに取り付
ける方法として、図９に示すように、絶縁性のヒートシ
ンク２１の上面に分離された２つの第１電極層２３、第
２電極層２４を設け、これらの第１電極層２３、第２電
極層２４に半導体レーザ素子のｐ型電極１３、ｎ型電極
１４を夫々融着させる構造が提案されている。。As a method for attaching a semiconductor laser device as shown in FIG. 7 to a heat sink by junction down, as shown in FIG. 9, two first electrode layers 23 separated on the upper surface of an insulating heat sink 21 are used. , A second electrode layer 24 and a structure in which the p-type electrode 13 and the n-type electrode 14 of the semiconductor laser device are respectively fused to the first electrode layer 23 and the second electrode layer 24 are proposed. .
【０００９】しかしながら、図９に示すような構成で
は、半導体レーザ素子は図７に示すように、ｐ型電極１
３が形成される面とｎ型電極１４が形成される面との高
さが異なり、段差があるため、ジャンクションダウンに
よるヒートシンクへの取り付けでは、半導体レーザ素子
がヒートシンクに斜めに融着され、半導体レーザ素子と
ヒートシンクとの間に隙間ができ、半導体レーザ素子と
ヒートシンクとの接着強度が弱く、強度的な問題があ
る。また、十分な放熱が出来ないという問題もある。However, in the configuration as shown in FIG. 9, the semiconductor laser element is, as shown in FIG.
3 is different from the surface on which the n-type electrode 14 is formed, and there is a step. Therefore, when the semiconductor laser device is mounted on the heat sink by junction down, the semiconductor laser element is obliquely fused to the heat sink, and A gap is formed between the laser element and the heat sink, and the bonding strength between the semiconductor laser element and the heat sink is weak, and there is a problem in strength. There is also a problem that sufficient heat radiation cannot be performed.
【００１０】また、このような図９に示す構成におい
て、動作電圧を小さくするためには、ｐ型電極１３とｎ
型電極１４との間の電流パスを短くする必要がある。そ
のためにはｐ型電極１３とｎ型電極１４との間の水平方
向のスペースを数十μm以内にしておくことが望まし
い。In the configuration shown in FIG. 9, the p-type electrode 13 and the n-type
It is necessary to shorten the current path between the mold electrode 14. For this purpose, it is desirable to keep the horizontal space between the p-type electrode 13 and the n-type electrode 14 within several tens of μm.
【００１１】しかしながら、ｐ型電極１３とｎ型電極１
４との間のスペースを小さくした場合、ｐ型電極１３と
ｎ型電極１４との間でショートが生じることなく、半導
体レーザ素子をヒートシンク２１に取り付けるには高い
組立精度が必要であり、量産性に適していないという問
題がある。However, the p-type electrode 13 and the n-type electrode 1
In the case where the space between the semiconductor laser device and the semiconductor laser device is small, a short circuit does not occur between the p-type electrode 13 and the n-type electrode 14, and a high assembly accuracy is required to attach the semiconductor laser device to the heat sink 21. There is a problem that is not suitable for.
【００１２】[0012]
【発明が解決しようとする課題】本発明は上記従来例の
欠点に鑑み為されたものであり、基板の一方側の面の高
さの異なる部分に第１導電型電極と第２導電型電極が形
成された発光素子を、ジャンクションダウンによりヒー
トシンクに強固に取り付けることが出来、強度的に優れ
た発光装置を提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the prior art, and has a first conductivity type electrode and a second conductivity type electrode provided at different heights on one side of a substrate. It is an object of the present invention to provide a light emitting device having excellent strength, in which a light emitting element formed with is formed can be firmly attached to a heat sink by junction down.
【００１３】更に、本発明は、上述の点に加え、発熱部
である発光部からの放熱が良好に行われ、しかも高い組
立精度を必要とすることなく、発光素子の電極間の電流
パスを短くすることにより、動作電圧を小さくすること
が出来る発光装置を提供することを目的とするものであ
る。、また、本発明は、上述の発光装置に適した発光素
子を提供することを目的とするものである。Further, in addition to the above-mentioned points, the present invention provides good heat radiation from the light emitting portion, which is a heat generating portion, and also provides a current path between the electrodes of the light emitting element without requiring high assembly accuracy. It is an object of the present invention to provide a light-emitting device in which the operating voltage can be reduced by shortening the length. Another object of the present invention is to provide a light emitting element suitable for the above light emitting device.
【００１４】また、本発明は、基板の一方側の面の高さ
の異なる部分に第１導電型電極と第２導電型電極が形成
された半導体素子を、ジャンクションダウンによりヒー
トシンクに強固に取り付けることが出来、強度的に優れ
た発光装置を提供することを目的とするものである。Further, according to the present invention, a semiconductor element having a first conductivity type electrode and a second conductivity type electrode formed at portions having different heights on one surface of a substrate is firmly attached to a heat sink by junction down. It is intended to provide a light emitting device excellent in strength.
【００１５】更に、本発明は、上述の点に加え、発熱部
である電流通路部からの放熱が良好に行われ、しかも高
い組立精度を必要とすることなく、半導体素子の電極間
の電流パスを短くすることにより、動作電圧を小さくす
ることが出来る半導体装置を提供することを目的とする
ものである。Further, in addition to the points described above, the present invention provides good heat dissipation from the current path portion, which is a heat generating portion, and furthermore, does not require high assembly precision, and provides a current path between the electrodes of the semiconductor element. It is an object of the present invention to provide a semiconductor device in which the operating voltage can be reduced by shortening.
【００１６】また、本発明は、上述の半導体装置に適し
た半導体素子を提供することを目的とするものである。Another object of the present invention is to provide a semiconductor element suitable for the above-described semiconductor device.
【００１７】[0017]
【課題を解決するための手段】本発明の発光装置は、基
板上に発光部を有する半導体層が形成され、該半導体層
の上層部分に第１導電型電極が形成され、下層部分に第
２導電型電極が形成された発光素子を、基台上に配置さ
れたヒートシンクに固定してなる発光装置であって、前
記基台上には前記ヒートシンクよりも厚みが薄いスペー
サを配置し、前記発光素子の第１導電型電極を前記ヒー
トシンクの上面に形成した第１電極に接合し、前記発光
素子の第２導電型電極を前記スペーサの上面に形成した
第２電極に導電性接着剤を介して接続したことを特徴と
する。According to a light emitting device of the present invention, a semiconductor layer having a light emitting portion is formed on a substrate, a first conductivity type electrode is formed on an upper layer portion of the semiconductor layer, and a second conductive layer is formed on a lower layer portion. What is claimed is: 1. A light-emitting device comprising: a light-emitting element having a conductive electrode formed thereon fixed to a heat sink disposed on a base; a spacer having a thickness smaller than that of the heat sink is disposed on the base; The first conductivity type electrode of the device is joined to the first electrode formed on the upper surface of the heat sink, and the second conductivity type electrode of the light emitting device is connected to the second electrode formed on the upper surface of the spacer via a conductive adhesive. It is characterized by being connected.
【００１８】このような構成の発光装置では、発光素子
をジャンクションダウンにてヒートシンクに取り付けた
際における第１導電型電極と第２導電型電極との段差に
よる発光素子の傾きは、ヒートシンクとスペーサとの厚
みの差により緩和、或いは無くなり、発光素子はヒート
シンクに強固に固定される。In the light emitting device having such a configuration, when the light emitting element is attached to the heat sink by junction down, the inclination of the light emitting element due to the step between the first conductive type electrode and the second conductive type electrode is determined by the heat sink, the spacer, The light emitting element is firmly fixed to the heat sink by the difference or the thickness of the light emitting element.
【００１９】しかも、前記導電性接着剤が接着時に流動
性を有する材料の場合、発光素子に高さ方向の位置ずれ
が生じても、発光素子の第２導電型電極とスペーサの第
２電極とが前記導電性接着剤により良好に接続される。Further, when the conductive adhesive is a material having fluidity at the time of bonding, the second conductive type electrode of the light emitting element and the second electrode of the spacer are connected even if the light emitting element is displaced in the height direction. Are well connected by the conductive adhesive.
【００２０】また、導電性接着剤としては、Ａｇペース
ト、Ｉｎ半田、ＩｎＳｎ半田等が良く、発光素子の第１
導電型電極をヒートシンクの上面に形成した第１電極に
接合する際の温度よりも低い温度で融着出来、柔らかい
ものが良い。As the conductive adhesive, Ag paste, In solder, InSn solder or the like is preferable.
It is preferable that the conductive type electrode can be fused at a temperature lower than the temperature at the time of joining the conductive type electrode to the first electrode formed on the upper surface of the heat sink and is soft.
【００２１】また、前記発光素子の前記基板が絶縁性材
料よりなる場合、基板の裏面側に電極が形成し難い構成
であるため、上述のジャンクションダウンによる固定は
有効である。When the substrate of the light emitting element is made of an insulating material, it is difficult to form an electrode on the back surface of the substrate, so that the above-mentioned fixing by junction down is effective.
【００２２】また、前記発光素子の前記第１導電型電極
がｐ型電極である場合、電気的抵抗が大きく、発熱量の
多いｐ型半導体層がヒートシンクに近づくため、効率良
く放熱される。When the first conductivity type electrode of the light emitting element is a p-type electrode, the p-type semiconductor layer having a large electric resistance and generating a large amount of heat approaches a heat sink, so that heat is efficiently radiated.
【００２３】また、前記発光素子の前記第２導電型電極
の上面の一部に絶縁膜を形成することにより、第１導電
型電極と第２導電型電極とを近接させ、第１導電型電極
と第２導電型電流との間の電流パスを短くした発光素子
を、ジャンクションダウンにてヒートシンクに固定する
際、位置ずれが生じても、第１導電型電極と第２導電型
電極との間でショートは起こり難くなる。Further, by forming an insulating film on a part of the upper surface of the second conductivity type electrode of the light emitting element, the first conductivity type electrode and the second conductivity type electrode are brought close to each other, and the first conductivity type electrode is formed. When the light emitting element having a shortened current path between the first conductive type current and the second conductive type current is fixed to the heat sink by junction down, even if the displacement occurs, the position between the first conductive type electrode and the second conductive type electrode is reduced. Shorts are less likely to occur.
【００２４】また、前記ヒートシンクと前記スペーサと
の少なくとも一方を絶縁性材料により形成することによ
り、基台を導電性材料により形成した場合においても、
第１電極と第２電極とが基台を介して短絡することが防
止される。Further, by forming at least one of the heat sink and the spacer from an insulating material, even when the base is formed from a conductive material,
A short circuit between the first electrode and the second electrode via the base is prevented.
【００２５】特に、ヒートシンクとスペーサとの両方が
絶縁材料よりなる場合は、第１電極、第２電極のどちら
を共通電極（例えば、アース）に接続しても良く、設計
の自由度が増す。In particular, when both the heat sink and the spacer are made of an insulating material, either the first electrode or the second electrode may be connected to a common electrode (for example, ground), which increases the degree of freedom in design.
【００２６】また、前記ヒートシンクを前記スペーサと
一体化された絶縁性材料により構成することにより、部
品点数を削減することが出来る。Further, the number of parts can be reduced by forming the heat sink from an insulating material integrated with the spacer.
【００２７】また、本発明の発光素子は、基板上に発光
部を有する半導体層が形成され、該半導体層の上層部分
に第１導電型電極が形成され、下層部分に第２導電型電
極が形成された発光素子であって、前記第２導電型電極
の上面のうち第１導電型電極側の部分に絶縁膜が形成さ
れていることを特徴とする。In the light emitting device of the present invention, a semiconductor layer having a light emitting portion is formed on a substrate, a first conductivity type electrode is formed on an upper layer portion of the semiconductor layer, and a second conductivity type electrode is formed on a lower layer portion. In the formed light emitting element, an insulating film is formed on a portion of the upper surface of the second conductivity type electrode on the first conductivity type electrode side.
【００２８】このような構成の発光素子では、ジャンク
ションダウンにてヒートシンク等に固定した際、絶縁膜
により第２導電型電極が第１導電型電極側と短絡するこ
とが防止される。また、本発明の半導体装置は、基板上
に複数の半導体層が形成され、該半導体層の上層部分に
第１導電型電極が形成され、下層部分に第２導電型電極
が形成された半導体素子を、基台上に配置されたヒート
シンクに固定してなる半導体装置であって、前記基台上
には前記ヒートシンクよりも厚みが薄いスペーサを配置
し、前記半導体素子の第１導電型電極を前記ヒートシン
クの上面に形成した第１電極に接合し、前記半導体素子
の第２導電型電極を前記スペーサの上面に形成した第２
電極に導電性接着剤を介して接続したことを特徴とす
る。In the light emitting device having such a configuration, when the light emitting device is fixed to a heat sink or the like by junction down, the second conductive type electrode is prevented from being short-circuited with the first conductive type electrode by the insulating film. Further, the semiconductor device of the present invention is a semiconductor device in which a plurality of semiconductor layers are formed on a substrate, a first conductivity type electrode is formed in an upper layer portion of the semiconductor layer, and a second conductivity type electrode is formed in a lower layer portion. A semiconductor device fixed to a heat sink disposed on a base, a spacer having a thickness smaller than the heat sink is disposed on the base, and the first conductivity type electrode of the semiconductor element is disposed on the base. A second electrode formed on the upper surface of the spacer by bonding the second conductive type electrode of the semiconductor element to the first electrode formed on the upper surface of the heat sink;
It is characterized in that it is connected to the electrode via a conductive adhesive.
【００２９】このような構成の半導体装置では、半導体
素子をジャンクションダウンにてヒートシンクに取り付
けた際における第１導電型電極と第２導電型電極との段
差による半導体素子の傾きは、ヒートシンクとスペーサ
との厚みの差により緩和、或いは無くなり、半導体素子
はヒートシンクに強固に固定される。In the semiconductor device having such a configuration, the inclination of the semiconductor element due to the step between the first conductivity type electrode and the second conductivity type electrode when the semiconductor element is mounted on the heat sink by junction down is determined by the heat sink, the spacer, The semiconductor element is firmly fixed to the heat sink by the difference in thickness of the semiconductor element.
【００３０】しかも、前記導電性接着剤が接着時に流動
性を有する材料の場合、半導体素子に高さ方向の位置ず
れが生じても、半導体素子の第２導電型電極とスペーサ
の第２電極とが前記導電性接着剤により良好に接続され
る。In addition, when the conductive adhesive is a material having fluidity at the time of bonding, the second conductive type electrode of the semiconductor element and the second electrode of the spacer are connected even if the semiconductor element is displaced in the height direction. Are well connected by the conductive adhesive.
【００３１】また、前記半導体素子の前記基板が絶縁性
材料よりなる場合、基板の下面側に電極が形成し難い構
成であるため、上述のジャンクションダウンによる固定
は有効である。When the substrate of the semiconductor element is made of an insulating material, it is difficult to form an electrode on the lower surface side of the substrate. Therefore, the above-described fixing by junction down is effective.
【００３２】また、前記半導体素子の前記第１導電型電
極がｐ型電極である場合、電気的抵抗が大きく、発熱量
の多いｐ型半導体層がヒートシンクに近づくため、効率
良く放熱される。When the first conductivity type electrode of the semiconductor element is a p-type electrode, the p-type semiconductor layer having a large electric resistance and generating a large amount of heat approaches the heat sink, so that heat is efficiently radiated.
【００３３】また、前記半導体素子の前記第２導電型電
極の上面の一部に絶縁膜を形成することにより、第１導
電型電極と第２導電型電極とを近接させ、第１導電型電
極と第２導電型電流との間の電流パスを短くした半導体
素子を、ジャンクションダウンにてヒートシンクに固定
する際、位置ずれが生じても、第１導電型電極と第２導
電型電極との間でショートは起こり難くなる。Further, by forming an insulating film on a part of the upper surface of the second conductivity type electrode of the semiconductor element, the first conductivity type electrode and the second conductivity type electrode are brought close to each other, and the first conductivity type electrode is formed. When a semiconductor element having a shortened current path between the first conductive type current and the second conductive type current is fixed to a heat sink by junction-down, even if a positional shift occurs, the first conductive type electrode and the second conductive type electrode may be displaced. Shorts are less likely to occur.
【００３４】また、前記ヒートシンクと前記スペーサと
の少なくとも一方が絶縁性材料により形成することによ
り、基台を導電性材料により形成した場合においても、
第１電極と第２電極とが基台を介して短絡することが防
止される。Further, when at least one of the heat sink and the spacer is formed of an insulating material, even when the base is formed of a conductive material,
A short circuit between the first electrode and the second electrode via the base is prevented.
【００３５】特に、ヒートシンクとスペーサとの両方が
絶縁材料よりなる場合は、第１電極、第２電極のどちら
を共通電極（例えば、アース）に接続しても良く、設計
の自由度が増す。In particular, when both the heat sink and the spacer are made of an insulating material, either the first electrode or the second electrode may be connected to a common electrode (for example, ground), which increases the degree of freedom in design.
【００３６】また、前記ヒートシンクが前記スペーサと
一体化された絶縁性材料により構成することにより、部
品点数を削減することが出来る。Further, since the heat sink is made of an insulating material integrated with the spacer, the number of parts can be reduced.
【００３７】また、本発明の半導体素子は、基板上に複
数の半導体層が形成され、該半導体層の上層部分に第１
導電型電極が形成され、下層部分に第２導電型電極が形
成された半導体素子であって、前記第２導電型電極の上
面のうち第１導電型電極側の部分に絶縁膜が形成されて
いることを特徴とする。In the semiconductor device of the present invention, a plurality of semiconductor layers are formed on a substrate, and a first layer is formed on an upper layer of the semiconductor layer.
A semiconductor element in which a conductive type electrode is formed and a second conductive type electrode is formed in a lower layer portion, wherein an insulating film is formed in a portion of the upper surface of the second conductive type electrode on the first conductive type electrode side. It is characterized by being.
【００３８】このような構成の半導体素子では、ジャン
クションダウンにてヒートシンク等に固定した際、絶縁
膜により第２導電型電極が第１導電型電極側と短絡する
ことが防止される。In the semiconductor element having such a configuration, when the semiconductor element is fixed to a heat sink or the like by junction down, the second conductive type electrode is prevented from being short-circuited with the first conductive type electrode side by the insulating film.
【００３９】[0039]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００４０】図１は本発明の実施の形態である半導体レ
ーザ装置に用いられる半導体レーザ素子の構成を示す断
面図であり、図７と同一部分には同一符号を付し、その
説明は割愛する。FIG. 1 is a sectional view showing the configuration of a semiconductor laser device used in a semiconductor laser device according to an embodiment of the present invention. The same parts as those in FIG. .
【００４１】この実施の形態の半導体レーザ素子では、
絶縁膜１２はｎ型電極１４のｐ型電極側の側面及び上面
の一部に形成されている部分１２ａを有する。また、ｐ
型電極１３はｐ型コンタクト層９の上面からリッジ部１
０を覆うように絶縁膜１２上の一部まで形成されてい
る。In the semiconductor laser device of this embodiment,
The insulating film 12 has a portion 12a formed on a part of the side surface and the upper surface of the n-type electrode 14 on the p-type electrode side. Also, p
The electrode 13 is formed from the upper surface of the p-type contact layer 9 to the ridge portion 1.
0 to a part of the insulating film 12.
【００４２】この実施の形態におけるｐ型電極１３及び
ｎ型電極１４の寸法関係は、ｐ型電極１３とｎ型電極１
４との間のスペースの幅Ｗ１が２０μｍ、ｎ型電極１４
の幅Ｗ２が３００μｍ、絶縁膜１２のうちｎ型電極１４
上に形成された部分の幅Ｗ３が２００μｍ、発光部Ｈの
中心からｐ型電極１３のｎ型電極側の端部までの幅Ｗ４
が１０μｍである。The dimensional relationship between the p-type electrode 13 and the n-type electrode 14 in this embodiment is as follows.
4 has a width W1 of 20 μm and the n-type electrode 14
Has a width W2 of 300 μm and the n-type electrode 14 of the insulating film 12
The width W3 of the upper portion is 200 μm, and the width W4 from the center of the light emitting portion H to the end of the p-type electrode 13 on the n-type electrode side.
Is 10 μm.
【００４３】図２は図１に示す半導体レーザ素子がヒー
トシンクに取り付けられた本実施の形態の半導体レーザ
装置の構成を示す図である。FIG. 2 is a diagram showing a configuration of the semiconductor laser device of the present embodiment in which the semiconductor laser device shown in FIG. 1 is mounted on a heat sink.
【００４４】図中、１００は図１に示す半導体レーザ素
子、２００はヒートシンク、３００はスペーサ部材であ
る。In the figure, 100 is the semiconductor laser device shown in FIG. 1, 200 is a heat sink, and 300 is a spacer member.
【００４５】ヒートシンク２００はＡｌＮよりなる。ま
た、ＡｌＮ以外にも、Ｓｉ、ｃ−ＢＮ、ダイヤモンド等
の熱伝導性の良い材料が適している。また、ヒートシン
ク２００の上面全域には電極層２０１が形成されてい
る。電極層２０１はＴｉ−Ｐｔ−Ａｕ等の合金層とＡｕ
−Ｓｎ等の半田材とよりなる。The heat sink 200 is made of AlN. Further, other than AlN, a material having good heat conductivity such as Si, c-BN, and diamond is suitable. An electrode layer 201 is formed on the entire upper surface of the heat sink 200. The electrode layer 201 is made of an alloy layer such as Ti-Pt-Au and Au.
-It is made of a solder material such as Sn.
【００４６】スペーサ部材３００はセラミックやガラス
等の絶縁材料や、Ｓｉ等の半導体材料、Ｃｕ、Ｆｅ等の
導電性材料よりなる。尚、本実施の形態では、セラミッ
ク板を用いた。また、スペーサ部材３００の上面全域に
は電極層２０２が形成されている。尚、電極層２０２も
電極層２０１と同様に、Ｔｉ−Ｐｔ−Ａｕ等の合金層と
Ａｕ−Ｓｎ等の半田材とよりなる。The spacer member 300 is made of an insulating material such as ceramic or glass, a semiconductor material such as Si, or a conductive material such as Cu or Fe. In the present embodiment, a ceramic plate is used. The electrode layer 202 is formed on the entire upper surface of the spacer member 300. Note that, similarly to the electrode layer 201, the electrode layer 202 is made of an alloy layer such as Ti-Pt-Au and a solder material such as Au-Sn.
【００４７】スペーサ部材３００の厚みはヒートシンク
２００の厚みよりも薄く、本実施の形態では、ヒートシ
ンク２００の厚みｄ１を３５０μｍ、スペーサ部材３０
０の厚みｄ２を２５０μｍとし、両者の差を１００μｍ
とした。The thickness of the spacer member 300 is smaller than the thickness of the heat sink 200, and in this embodiment, the thickness d1 of the heat sink 200 is 350 μm,
0 is 250 μm, and the difference between the two is 100 μm.
And
【００４８】ヒートシンク２００及びスペーサ部材３０
０は、両者の間に小さなスペース（本実施の形態では距
離約１５０μｍ）が生じるだけ離して、ステム３３上に
配置され、Ａｇペースト等によりステム３３上に固定さ
れている。Heat sink 200 and spacer member 30
Numeral 0 is disposed on the stem 33 so that a small space (a distance of about 150 μm in the present embodiment) is generated between the two, and is fixed on the stem 33 by Ag paste or the like.
【００４９】半導体レーザ素子１００は、基板１が上方
（ヒートシンク２００とは反対側）になるように向け、
ｐ型電極１３が第１ヒートシンク２００の電極層２０１
に半田により接合されている。このとき、半導体レーザ
素子１００は、ｎ型電極１４の一部がスペーサ部３００
の上方に位置するように配置されており、ｎ型電極１４
とスペーサ部材３００の電極層３０１との間の隙間には
Ａｇペースト３４が充填され、それにより両者の固定と
電気的接続が行われている。The semiconductor laser device 100 is oriented so that the substrate 1 is located above (the side opposite to the heat sink 200).
The p-type electrode 13 is an electrode layer 201 of the first heat sink 200.
Are joined by solder. At this time, in the semiconductor laser device 100, a part of the n-type electrode 14 is
Is disposed above the n-type electrode 14.
The gap between the electrode layer 301 of the spacer member 300 is filled with the Ag paste 34, thereby fixing and electrically connecting the two.
【００５０】また、ヒートシンク２００の電極層２０１
にはワイヤ３１が、スペーサ部材３００の電極層３０１
にはワイヤ３２が夫々接続固定されている。The electrode layer 201 of the heat sink 200
The wire 31 is connected to the electrode layer 301 of the spacer member 300.
, Wires 32 are connected and fixed respectively.
【００５１】次に、図２に示した半導体レーザ装置の組
立工程について説明する。Next, an assembly process of the semiconductor laser device shown in FIG. 2 will be described.
【００５２】先ず、図３に示すように、ヒートシンク２
００の所定位置に半導体レーザ素子１００を固定する。First, as shown in FIG.
The semiconductor laser device 100 is fixed at a predetermined position of 00.
【００５３】このとき、半導体レーザ素子１００のヒー
トシンク２００上からの突出量の許容範囲は、突出量が
最も大きい時は、図４（ａ）に示すように、半導体レー
ザ素子１００の発光部Ｈがヒートシンク２００の端部上
に位置する場合であり、突出量が最も小さい時は、図４
（ｂ）に示すように、半導体レーザ素子１００のｎ型電
極１４上の絶縁膜の部分１２ａの端部がヒートシンク２
００の端部上に位置する場合である。即ち、半導体レー
ザ素子１００のヒートシンク２００への取り付け位置の
許容範囲は、図４（ａ）から図４（ｂ）の範囲、即ち、
絶縁膜１２のうちｎ型電極１４上に形成された部分の幅
Ｗ３（２００μｍ）よりも更に大きい範囲となる。At this time, the allowable range of the amount of protrusion of the semiconductor laser device 100 from the heat sink 200 is such that when the protrusion amount is the largest, the light emitting portion H of the semiconductor laser device 100 is turned off as shown in FIG. FIG. 4 shows a case in which the protrusion amount is the smallest on the end of the heat sink 200.
As shown in (b), the end of the insulating film portion 12 a on the n-type electrode 14 of the semiconductor laser device 100 is
00 is located on the end. That is, the allowable range of the mounting position of the semiconductor laser element 100 to the heat sink 200 is the range from FIG. 4A to FIG.
The range is larger than the width W3 (200 μm) of the portion of the insulating film 12 formed on the n-type electrode 14.
【００５４】また、半導体レーザ素子１００のヒートシ
ンク２００からの突出量が、図４（ａ）よりも大き過ぎ
ると、発光部Ｈがヒートシンク２００上から外れ、放熱
効果が低下する。また、半導体レーザ素子１００のヒー
トシンク２００からの突出量が、図４（ｂ）よりも小さ
過ぎると、半導体レーザ素子１００のｎ型電極１４がヒ
ートシンク２００の電極部２０１に接触し、ショートす
る虞れがある。If the amount of protrusion of the semiconductor laser device 100 from the heat sink 200 is too large as shown in FIG. 4A, the light emitting portion H comes off the heat sink 200, and the heat radiation effect is reduced. If the amount of protrusion of the semiconductor laser device 100 from the heat sink 200 is too small as compared with FIG. 4B, the n-type electrode 14 of the semiconductor laser device 100 may contact the electrode portion 201 of the heat sink 200 and cause a short circuit. There is.
【００５５】尚、図４（ｂ）の位置が放熱効果の点では
最も優れている。即ち、組立時においては、半導体レー
ザ素子１００のヒートシンク２００からの突出量が図４
（ｂ）よりも小さくならない範囲、出来るだけ図４
（ｂ）の状態に近づけるのが良い。The position shown in FIG. 4B is the most excellent in terms of the heat radiation effect. That is, at the time of assembly, the amount of protrusion of the semiconductor laser device 100 from the heat sink 200 is reduced as shown in FIG.
FIG. 4 shows the range not smaller than FIG.
It is better to approach the state of (b).
【００５６】次に、図５（ａ）に示すように、予めスペ
ーサ部材３００が固定されているステム３４に、図３の
工程で半導体レーザ素子１００が取り付けられたヒート
シンク２００を３００℃〜４００℃の加熱により融着す
る。このとき、図５（ｂ）に示すように、ヒートシンク
２００は半導体レーザ素子１００のｎ型電極１４がスペ
ーサ部材３００の電極層３０１の上方に位置するように
位置決めされている。Next, as shown in FIG. 5A, a heat sink 200 having the semiconductor laser element 100 attached in the step of FIG. Are fused by heating. At this time, as shown in FIG. 5B, the heat sink 200 is positioned so that the n-type electrode 14 of the semiconductor laser device 100 is positioned above the electrode layer 301 of the spacer member 300.
【００５７】次に、図５（ｃ）に示すように、半導体レ
ーザ素子１００のｎ型電極１４とスペーサ部材３００と
の間に、Ａｇペーストを流し込み、１００℃でベーキン
グすることにより、Ａｇペースト３４によりｎ型電極１
４とスペーサ部材３００との電気的接続及び固定を行
い、更に、ワイヤ３１、３２をヒートシンク２００の電
極層２０１、スペーサ部材３００の電極層３０１に夫々
接続する。Next, as shown in FIG. 5C, the Ag paste is poured between the n-type electrode 14 of the semiconductor laser device 100 and the spacer member 300 and baked at 100 ° C. The n-type electrode 1
4 and the spacer member 300 are electrically connected and fixed, and the wires 31 and 32 are connected to the electrode layer 201 of the heat sink 200 and the electrode layer 301 of the spacer member 300, respectively.
【００５８】以上の組立工程により、図１に示す第１実
施例の半導体レーザ装置は完成する。By the above assembling steps, the semiconductor laser device of the first embodiment shown in FIG. 1 is completed.
【００５９】上述した第１実施例の半導体レーザ装置で
は、半導体レーザ素子１００がジャンクションダウンに
よりヒートシンク２００に取り付けられるため、放熱効
果が優れており、しかも、半導体レーザ素子１００のヒ
ートシンク２００への取り付け位置に多少のずれが生じ
ても、ｐ型電極１３とｎ型電極１４との間にショート等
の不都合が生じることも無い。In the semiconductor laser device of the first embodiment described above, the semiconductor laser element 100 is mounted on the heat sink 200 by junction down, so that the heat radiation effect is excellent, and the mounting position of the semiconductor laser element 100 on the heat sink 200 is improved. However, even if there is some deviation, there is no inconvenience such as a short circuit between the p-type electrode 13 and the n-type electrode 14.
【００６０】また、上述の第１実施例では、ヒートシン
ク２００及びスペーサ部材３００を絶縁性材料により構
成したが、ヒートシンク２００及びスペーサ部材３００
のうち、どちらか一方を絶縁性材料にすればよく、これ
により、半導体レーザ素子１００のｐ型電極１３とｎ型
電極１４とのステム３３を介しての電気的短絡は防止さ
れる。In the first embodiment, the heat sink 200 and the spacer member 300 are made of an insulating material.
Of these, either one may be made of an insulating material, whereby an electrical short circuit between the p-type electrode 13 and the n-type electrode 14 of the semiconductor laser element 100 via the stem 33 is prevented.
【００６１】また、本発明は図６に示す第２実施例のよ
うに、ヒートシンクとスペーサ部材とを別部品とせず
に、上面に段差を有する絶縁性ヒートシンク２１０に半
導体レーザ素子１００を取り付けてもよい。この場合、
絶縁性ヒートシンク２１０の段差の高い方の面に形成さ
れた第１電極部２１１には、半導体レーザ素子１００の
ｐ型電極１３が接合され、第２電極部２１２には、半導
体レーザ素子１００のｎ型電極１４がＡｇペースト４３
を介して接続固定されている。Further, according to the present invention, as in the second embodiment shown in FIG. 6, the semiconductor laser element 100 is mounted on an insulating heat sink 210 having a step on the upper surface without using the heat sink and the spacer member as separate components. Good. in this case,
The p-type electrode 13 of the semiconductor laser device 100 is joined to the first electrode portion 211 formed on the surface of the insulating heat sink 210 with the higher step, and the n-type electrode of the semiconductor laser device 100 is joined to the second electrode portion 212. The mold electrode 14 is made of an Ag paste 43
Connected via is fixed.
【００６２】この第２実施例の半導体レーザ装置では、
少ない部品点数で第１実施例と同様の効果を得ることが
できる。In the semiconductor laser device of the second embodiment,
The same effect as in the first embodiment can be obtained with a small number of parts.
【００６３】尚、上述の第１、第２実施例では、半導体
レーザ装置の場合について説明したが、発光ダイオード
等の他の発光装置についても、本発明は適用可能であ
る。また、基板材料としても、サファイア基板以外の他
の絶縁性材料よりなる基板、あるいは導電性の基板でも
よい。また、更に、本発明は、発光装置以外にも、基板
の一方側の面の高低差のある部分に複数の電極が別々に
形成されている半導体素子を用いた半導体装置であれば
適用可能であり、特に、発熱量が多い大電流を流す半導
体装置に適している。In the first and second embodiments, the case of a semiconductor laser device has been described. However, the present invention can be applied to other light emitting devices such as a light emitting diode. Further, as the substrate material, a substrate made of an insulating material other than the sapphire substrate or a conductive substrate may be used. Further, the present invention can be applied to a semiconductor device using a semiconductor element in which a plurality of electrodes are separately formed in a portion having a height difference on one surface of a substrate other than the light emitting device. In particular, it is suitable for a semiconductor device that flows a large current that generates a large amount of heat.
【００６４】[0064]
【発明の効果】本発明によれば、基板の一方側の面の高
さの異なる部分に第１導電型電極と第２導電型電極が形
成された発光素子を、ジャンクションダウンによりヒー
トシンクに強固に取り付けることが出来、強度的に優れ
た発光装置を提供し得る。According to the present invention, a light emitting element having a first conductive type electrode and a second conductive type electrode formed at portions having different heights on one side of a substrate can be firmly attached to a heat sink by junction down. A light emitting device that can be attached and has excellent strength can be provided.
【００６５】更に、本発明によれば、発光素子をジャン
クションダウンによりヒートシンクに取り付けることに
より、発熱部である発光部からの放熱が良好に行われ、
しかも高い組立精度を必要とすることなく、発光素子の
電極間の電流パスを短くすることにより、動作電圧を小
さくすることが出来る発光装置を提供し得る。Further, according to the present invention, by attaching the light emitting element to the heat sink by junction down, the heat radiation from the light emitting section, which is the heat generating section, can be satisfactorily performed.
Moreover, it is possible to provide a light emitting device capable of reducing operating voltage by shortening a current path between electrodes of a light emitting element without requiring high assembly accuracy.
【００６６】また、本発明によれば、上述の発光装置に
適した発光素子を提供し得る。Further, according to the present invention, a light emitting element suitable for the above light emitting device can be provided.
【００６７】また、本発明によれば、基板の一方側の面
の高さの異なる部分に第１導電型電極と第２導電型電極
が形成された半導体素子を、ジャンクションダウンによ
りヒートシンクに強固に取り付けることが出来、強度的
に優れた半導体装置を提供し得る。Further, according to the present invention, a semiconductor element having a first conductivity type electrode and a second conductivity type electrode formed at portions having different heights on one side of a substrate is firmly attached to a heat sink by junction down. A semiconductor device which can be attached and has excellent strength can be provided.
【００６８】更に、本発明によれば、半導体素子をジャ
ンクションダウンによりヒートシンクに取り付けること
により、発熱部である電流通路部からの放熱が良好に行
われ、しかも高い組立精度を必要とすることなく、半導
体素子の電極間の電流パスを短くすることにより、動作
電圧を小さくすることが出来る半導体装置を提供し得
る。Further, according to the present invention, by attaching the semiconductor element to the heat sink by junction down, heat can be radiated well from the current path portion, which is a heat generating portion, and high assembly accuracy is not required. By shortening a current path between electrodes of a semiconductor element, a semiconductor device which can reduce an operating voltage can be provided.
【００６９】また、本発明によれば、上述の半導体装置
に適した半導体素子を提供し得る。According to the present invention, a semiconductor element suitable for the above-described semiconductor device can be provided.
【図１】本発明の第１実施例の半導体レーザ素子の構成
を示す断面図である。FIG. 1 is a sectional view showing a configuration of a semiconductor laser device according to a first embodiment of the present invention.
【図２】本発明の第１実施例の半導体レーザ装置の構成
を示す図である。FIG. 2 is a diagram illustrating a configuration of a semiconductor laser device according to a first embodiment of the present invention.
【図３】本発明の第１実施例の半導体レーザ装置の組立
工程を示す図である。FIG. 3 is a view showing an assembly process of the semiconductor laser device according to the first embodiment of the present invention.
【図４】本発明の第１実施例の半導体レーザ装置におけ
る半導体レーザ素子のヒートシンクへの取り付け位置を
示す図である。FIG. 4 is a view showing a mounting position of a semiconductor laser element to a heat sink in the semiconductor laser device according to the first embodiment of the present invention.
【図５】本発明の第１実施例の半導体レーザ装置の組立
工程を示す図である。FIG. 5 is a view showing an assembly process of the semiconductor laser device according to the first embodiment of the present invention.
【図６】本発明の第２実施例の半導体レーザ装置の構成
を示す図である。FIG. 6 is a diagram showing a configuration of a semiconductor laser device according to a second embodiment of the present invention.
【図７】従来の半導体レーザ素子の構成を示す断面図で
ある。FIG. 7 is a cross-sectional view illustrating a configuration of a conventional semiconductor laser device.
【図８】従来の半導体レーザ装置の構成を示す図であ
る。FIG. 8 is a diagram showing a configuration of a conventional semiconductor laser device.
【図９】従来の半導体レーザ装置の構成を示す図であ
る。FIG. 9 is a diagram showing a configuration of a conventional semiconductor laser device.
１ サファイア基板 １２ 絶縁膜 １３ 第１導電型電極 １４ 第２導電型電極 １５ 半導体層 １００ 半導体レーザ素子 ２００ ヒートシンク ２０１ 第１電極層 ３００ スペーサ部材 ３０１ 第２電極層 ３３ ステム（基台） ３４ Ａｇペースト（導電性接着剤） ２１０ ヒートシンク ２１１ 第１電極層 ２１２ 第２電極層 Reference Signs List 1 sapphire substrate 12 insulating film 13 first conductivity type electrode 14 second conductivity type electrode 15 semiconductor layer 100 semiconductor laser element 200 heat sink 201 first electrode layer 300 spacer member 301 second electrode layer 33 stem (base) 34 Ag paste ( (Conductive adhesive) 210 heat sink 211 first electrode layer 212 second electrode layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松本 光晴 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 Ｆターム(参考） 5F041 AA24 AA25 CA04 DA03 DA34 DA35 FF16 5F073 AA13 AA61 BA06 FA13 FA15 FA22 FA23 FA24 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Mitsuharu Matsumoto 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. F-term (reference) 5F041 AA24 AA25 CA04 DA03 DA34 DA35 FF16 5F073 AA13 AA61 BA06 FA13 FA15 FA22 FA23 FA24
Claims (14)
され、該半導体層の上層部分に第１導電型電極が形成さ
れ、下層部分に第２導電型電極が形成された発光素子
を、基台上に配置されたヒートシンクに固定してなる発
光装置であって、前記基台上には前記ヒートシンクより
も厚みが薄いスペーサを配置し、前記発光素子の第１導
電型電極を前記ヒートシンクの上面に形成した第１電極
に接合し、前記発光素子の第２導電型電極を前記スペー
サの上面に形成した第２電極に導電性接着剤を介して接
続したことを特徴とする発光装置。1. A light emitting device comprising: a semiconductor layer having a light emitting portion formed on a substrate; a first conductivity type electrode formed on an upper layer portion of the semiconductor layer; and a second conductivity type electrode formed on a lower layer portion. A light emitting device fixed to a heat sink disposed on a base, wherein a spacer having a thickness smaller than that of the heat sink is disposed on the base, and a first conductivity type electrode of the light emitting element is provided on the heat sink. A light emitting device comprising: a first electrode formed on an upper surface; and a second conductive type electrode of the light emitting element connected to a second electrode formed on an upper surface of the spacer via a conductive adhesive.
りなることを特徴とする請求項１記載の発光装置。2. The light emitting device according to claim 1, wherein said substrate of said light emitting element is made of an insulating material.
型電極であることを特徴とする請求項１又は２記載の発
光装置。3. The light emitting device according to claim 1, wherein the first conductivity type electrode is p-type.
The light emitting device according to claim 1, wherein the light emitting device is a mold electrode.
面の一部に絶縁膜が形成されていることを特徴とする請
求項１、２又は３記載の発光装置。4. The light emitting device according to claim 1, wherein an insulating film is formed on a part of the upper surface of the second conductivity type electrode of the light emitting element.
なくとも一方が絶縁性材料よりなることを特徴とする請
求項１、２、３又は４記載の発光装置。5. The light emitting device according to claim 1, wherein at least one of the heat sink and the spacer is made of an insulating material.
化された絶縁性材料よりなることを特徴とする請求項
１、２、３、４又は５記載の発光装置。6. The light emitting device according to claim 1, wherein the heat sink is made of an insulating material integrated with the spacer.
され、該半導体層の上層部分に第１導電型電極が形成さ
れ、下層部分に第２導電型電極が形成された発光素子で
あって、前記第２導電型電極の上面のうち第１導電型電
極側の部分に絶縁膜が形成されていることを特徴とする
発光素子。7. A light-emitting element in which a semiconductor layer having a light-emitting portion is formed on a substrate, a first conductivity type electrode is formed in an upper layer portion of the semiconductor layer, and a second conductivity type electrode is formed in a lower layer portion. A light-emitting element, wherein an insulating film is formed on a portion of the upper surface of the second conductivity type electrode on the first conductivity type electrode side.
半導体層の上層部分に第１導電型電極が形成され、下層
部分に第２導電型電極が形成された半導体素子を、基台
上に配置されたヒートシンクに固定してなる半導体装置
であって、前記基台上には前記ヒートシンクよりも厚み
が薄いスペーサを配置し、前記半導体素子の第１導電型
電極を前記ヒートシンクの上面に形成した第１電極に接
合し、前記半導体素子の第２導電型電極を前記スペーサ
の上面に形成した第２電極に導電性接着剤を介して接続
したことを特徴とする半導体装置。8. A semiconductor device in which a plurality of semiconductor layers are formed on a substrate, a first conductivity type electrode is formed in an upper layer portion of the semiconductor layer, and a second conductivity type electrode is formed in a lower layer portion. A semiconductor device fixed to a heat sink disposed thereon, wherein a spacer having a smaller thickness than the heat sink is disposed on the base, and a first conductivity type electrode of the semiconductor element is disposed on an upper surface of the heat sink. A semiconductor device, wherein the semiconductor device is joined to the formed first electrode, and the second conductivity type electrode of the semiconductor element is connected to the second electrode formed on the upper surface of the spacer via a conductive adhesive.
よりなることを特徴とする請求項８記載の半導体装置。9. The semiconductor device according to claim 8, wherein said substrate of said semiconductor element is made of an insulating material.
がｐ型電極であることを特徴とする請求項８又は９記載
の半導体装置。10. The semiconductor device according to claim 8, wherein the first conductivity type electrode of the semiconductor element is a p-type electrode.
の上面の一部に絶縁膜が形成されていることを特徴とす
る請求項８、９又は１０記載の半導体装置。11. The semiconductor device according to claim 8, wherein an insulating film is formed on a part of the upper surface of the second conductivity type electrode of the semiconductor element.
少なくとも一方が絶縁性材料よりなることを特徴とする
請求項８、９、１０又は１１記載の半導体装置。12. The semiconductor device according to claim 8, wherein at least one of said heat sink and said spacer is made of an insulating material.
体化された絶縁性材料よりなることを特徴とする請求項
８、９、１０、１１又は１２記載の半導体装置。13. The semiconductor device according to claim 8, wherein the heat sink is made of an insulating material integrated with the spacer.
該半導体層の上層部分に第１導電型電極が形成され、下
層部分に第２導電型電極が形成された半導体素子であっ
て、前記第２導電型電極の上面のうち第１導電型電極側
の部分に絶縁膜が形成されていることを特徴とする半導
体素子。14. A plurality of semiconductor layers are formed on a substrate,
A semiconductor element having a first conductivity type electrode formed in an upper layer portion of the semiconductor layer and a second conductivity type electrode formed in a lower layer portion, wherein the first conductivity type electrode side of the upper surface of the second conductivity type electrode is provided. A semiconductor element characterized in that an insulating film is formed in a portion of the semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17103599A JP2001007434A (en) | 1999-06-17 | 1999-06-17 | Light-emitting device, light-emitting element, semiconductor device and semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17103599A JP2001007434A (en) | 1999-06-17 | 1999-06-17 | Light-emitting device, light-emitting element, semiconductor device and semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001007434A true JP2001007434A (en) | 2001-01-12 |
Family
ID=15915892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17103599A Pending JP2001007434A (en) | 1999-06-17 | 1999-06-17 | Light-emitting device, light-emitting element, semiconductor device and semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001007434A (en) |
-
1999
- 1999-06-17 JP JP17103599A patent/JP2001007434A/en active Pending
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