JP2000341077A - Piezoelectric resonator - Google Patents
Piezoelectric resonatorInfo
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- JP2000341077A JP2000341077A JP15098199A JP15098199A JP2000341077A JP 2000341077 A JP2000341077 A JP 2000341077A JP 15098199 A JP15098199 A JP 15098199A JP 15098199 A JP15098199 A JP 15098199A JP 2000341077 A JP2000341077 A JP 2000341077A
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- electrode
- piezoelectric
- vibration
- long
- piezoelectric resonator
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は携帯電話、無線ＬＡ
Ｎ等に用いられる圧電共振子に関し、特に、圧電体の厚
み縦振動の共振を利用した圧電共振子に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a portable telephone and a wireless LA.
The present invention relates to a piezoelectric resonator used for N and the like, and more particularly, to a piezoelectric resonator utilizing resonance of a thickness longitudinal vibration of a piezoelectric body.
【０００２】[0002]
【従来技術】近年、無線通信や電気回路に用いられる周
波数の高周波数化に伴い、これらの電気信号に対して用
いられるフィルターも高周波数に対応したものが開発さ
れている。特に、無線通信においては２ＧＨｚ近傍のマ
イクロ波が主流になりつつあり、また既に数ＧＨｚ以上
の規格策定の動きもあることから、それらの周波数に対
応した安価で高性能なフィルターが求められている。2. Description of the Related Art In recent years, as the frequencies used for wireless communication and electric circuits have been increased, filters used for these electric signals have been developed to correspond to high frequencies. In particular, in the wireless communication, microwaves in the vicinity of 2 GHz are becoming mainstream, and since there is already a movement to establish standards of several GHz or more, there is a need for an inexpensive and high-performance filter corresponding to those frequencies. .
【０００３】最近注目されているのは、固体の表面を伝
わる音響波である表面弾性波の共振を用いる、表面弾性
波共振子（ＳＡＷＲ）を使ったフィルターである。この
フィルターは、固体表面上に形成した櫛型の電極間に印
加される高周波電界と表面弾性波の共振を用いており、
周波数の選択性が高く、優れたバンドパスフィルターと
して広く用いられている。Recently, a filter using a surface acoustic wave resonator (SAWR) that uses resonance of a surface acoustic wave, which is an acoustic wave transmitted on a surface of a solid, has been attracting attention. This filter uses the resonance of the high-frequency electric field and surface acoustic waves applied between the comb-shaped electrodes formed on the solid surface,
It has high frequency selectivity and is widely used as an excellent bandpass filter.
【０００４】しかしながら、ＳＡＷフィルターは、その
櫛型電極間距離が共振周波数に反比例するという関係に
あるため、１ＧＨｚを越える周波数領域では櫛形電極間
距離が１μｍ以下となり、電極作製が非常に困難であっ
た。However, in the SAW filter, the distance between the comb-shaped electrodes is inversely proportional to the resonance frequency. Therefore, the distance between the comb-shaped electrodes is 1 μm or less in a frequency region exceeding 1 GHz, and it is very difficult to manufacture the electrodes. Was.
【０００５】そこで、近年、数ＧＨｚ以上の高周波化に
対応するために、圧電性を示す薄膜の厚み縦振動モード
を用いた共振子が提案されている。Therefore, in recent years, a resonator using a thickness longitudinal vibration mode of a thin film exhibiting piezoelectricity has been proposed in order to cope with a high frequency of several GHz or more.
【０００６】これは、入力される高周波電気信号に対し
て、圧電薄膜が厚み縦振動を起こし、その振動が、薄膜
の厚さ方向において共振を起こすことを用いた共振子で
あり、バルク弾性波共振子（ＢＡＷＲ）と呼ばれてい
る。このＢＡＷＲは、ＳＡＷＲに比べて、より高い周波
数の共振周波数を持つレゾネーターの作製が可能となる
と期待され、開発が進められてきた。This is a resonator using a piezoelectric thin film that causes a thickness longitudinal vibration in response to an input high-frequency electric signal, and the vibration causes resonance in the thickness direction of the thin film. It is called a resonator (BAWR). This BAWR is expected to be able to produce a resonator having a higher resonance frequency than SAWR, and has been developed.
【０００７】従来のＢＡＷＲとしては、図１０に示すよ
うに、基体１と、該基体１表面上に形成された支持膜２
と、該支持膜２上に形成されたバッファー層３と、該バ
ッファー層３上に形成された第１電極４と、該第１電極
４上に形成された圧電薄膜５と、該圧電薄膜５上に形成
された２つの第２電極６とからなるものである（ＵＳＰ
４，３２０，３６５号公報）。支持膜２は、基体１に形
成された空間Ａを被覆するように、基体１表面に支持膜
２を形成することにより、第１電極４と圧電薄膜５と第
２電極６とからなる振動部に接する支持膜２の部分も振
動することになる。As a conventional BAWR, as shown in FIG. 10, a base 1 and a support film 2 formed on the surface of the base 1 are used.
A buffer layer 3 formed on the support film 2; a first electrode 4 formed on the buffer layer 3; a piezoelectric thin film 5 formed on the first electrode 4; And two second electrodes 6 formed thereon (USP
4,320,365). The supporting film 2 is formed by forming the supporting film 2 on the surface of the base 1 so as to cover the space A formed in the base 1, thereby forming a vibrating portion including the first electrode 4, the piezoelectric thin film 5, and the second electrode 6. The portion of the support film 2 that is in contact with is also vibrated.
【０００８】また、特開平９−５５９９８号公報には、
１対の電極間に複数の圧電体を一定の間隔を置いて配置
し、複数の振動部を形成した圧電共振子が開示されてい
る。この圧電共振子では、振動部と振動部との間には気
体や液体が充填されており、この構造によって機械結合
定数が大きくなり、実現可能な帯域が従来よりも２倍に
拡大している。Japanese Patent Application Laid-Open No. 9-55998 discloses that
A piezoelectric resonator in which a plurality of piezoelectric bodies are arranged at a fixed interval between a pair of electrodes to form a plurality of vibrating portions is disclosed. In this piezoelectric resonator, the space between the vibrating portions is filled with a gas or a liquid, and this structure increases the mechanical coupling constant, and the achievable band is twice as large as that of the related art. .
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、ＵＳＰ
４，３２０，３６５号公報に開示された圧電共振子で
は、ＺｎＯ、ＡｌＮのような比誘電率の小さい圧電体を
用いているために、これらの圧電材料の電気機械結合係
数が小さく、広帯域なＧＨｚ帯フィルターを実現するの
は困難であった。また、ＺｎＯ、ＡｌＮは比誘電率が小
さい為、マイクロ波回路で要求されるインピーダンスに
整合させるために、１辺が１００μｍを越える大きな電
極面積が必要であった。SUMMARY OF THE INVENTION However, USP
In the piezoelectric resonator disclosed in Japanese Patent No. 4,320,365, a piezoelectric material having a small relative dielectric constant, such as ZnO or AlN, is used. It has been difficult to realize a GHz band filter. Further, since ZnO and AlN have small relative dielectric constants, a large electrode area of more than 100 μm on one side is required in order to match the impedance required in a microwave circuit.
【００１０】このように、ＺｎＯ、ＡｌＮのような比誘
電率の小さい圧電体を用いると、電極サイズが膜厚に比
べて１００倍以上と非常に大きいために、不要振動を生
じやすいという課題があった。これは、電極面積が膜厚
に比べて十分大きい場合には、エネルギー閉じ込めモー
ドの１つである面内伝播モードが存在し、無電極部分と
の境界で反射されて、厚み縦振動よりわずかに振動数の
異なる定在波を生じ、不要振動が発生するためであっ
た。As described above, when a piezoelectric material having a small relative dielectric constant, such as ZnO or AlN, is used, unnecessary vibration is liable to occur because the electrode size is 100 times or more as large as the film thickness. there were. This is because when the electrode area is sufficiently large compared to the film thickness, there is an in-plane propagation mode, which is one of the energy confinement modes, which is reflected at the boundary with the non-electrode part and is slightly smaller than the thickness longitudinal vibration. This is because standing waves having different frequencies are generated, and unnecessary vibration is generated.
【００１１】また、特開平９−５５９９８号公報に開示
された圧電共振子では、振動部を分割して共振器の機械
結合係数を改善しようとしているが、各振動部の周囲が
空気や液体であるために自由端となり、電極間にある圧
電体を構成する原子のうちで、空気や液体に接する原子
が動きやすくなるので、不要な振動モードが発生してし
まうという課題があった。Further, in the piezoelectric resonator disclosed in Japanese Patent Application Laid-Open No. 9-55998, an attempt is made to improve the mechanical coupling coefficient of the resonator by dividing the vibrating portion, but the surroundings of each vibrating portion are air or liquid. For this reason, there is a problem that an unnecessary vibration mode is generated because a free end is formed, and among atoms constituting the piezoelectric body between the electrodes, atoms in contact with air or liquid are easily moved.
【００１２】本発明の目的は、ＧＨｚ帯の高周波用フィ
ルターを構成できるとともに、厚み縦振動モードの効果
的なエネルギー閉じ込めを可能とし、主要振動以外の不
要な振動を抑制してスプリアスの発生を防止でき、小型
でインピーダンス特性の良好な圧電共振子を提供するこ
とにある。An object of the present invention is to form a high frequency filter in the GHz band, enable effective energy confinement in the thickness longitudinal vibration mode, suppress unnecessary vibrations other than the main vibrations, and prevent the occurrence of spurious emissions. An object of the present invention is to provide a small-sized piezoelectric resonator having good impedance characteristics.
【００１３】[0013]
【課題を解決するための手段】本発明の圧電共振子は、
振動空間を有する基体と、該基体表面に前記振動空間を
被覆して形成された支持膜と、該支持膜の前記振動空間
と反対の面に当接され、圧電体を第１電極と第２電極と
で挟持した振動体とを具備する圧電共振子であって、前
記第１電極および前記第２電極は、それぞれ略平行に配
列した複数の長尺状電極を電気的に接続して形成され、
かつ、前記第１電極の長尺状電極と前記第２電極の長尺
状電極とは、前記基体側から見て交差していることを特
徴とするものである。According to the present invention, there is provided a piezoelectric resonator comprising:
A base having a vibration space, a support film formed by covering the vibration space on the surface of the base, and abutting against a surface of the support film opposite to the vibration space, and connecting the piezoelectric body to the first electrode and the second electrode; A piezoelectric resonator comprising: a vibrating body sandwiched between electrodes; wherein the first electrode and the second electrode are formed by electrically connecting a plurality of elongated electrodes arranged substantially in parallel with each other. ,
The long electrode of the first electrode and the long electrode of the second electrode cross each other when viewed from the base.
【００１４】また、基体と、該基体表面に形成され、複
数の絶縁体を積層してなる振動反射層と、該振動反射層
の表面に形成され、圧電体を第１電極と第２電極で挟持
した振動体とを具備する圧電共振子であって、前記第１
電極および前記第２電極は、それぞれ略平行に配列した
複数の長尺状電極を電気的に接続して形成され、かつ、
前記第１電極の長尺状電極と前記第２電極の長尺状電極
とは、前記基体側から見て交差していることを特徴とす
るものである。Further, a base, a vibration reflection layer formed on the surface of the base and laminated with a plurality of insulators, and a piezoelectric body formed on the surface of the vibration reflection layer, wherein the piezoelectric body is composed of a first electrode and a second electrode. A piezoelectric resonator comprising:
The electrode and the second electrode are formed by electrically connecting a plurality of elongated electrodes each arranged substantially in parallel, and
The long electrode of the first electrode and the long electrode of the second electrode cross each other when viewed from the base side.
【００１５】特に、圧電体が強誘電体からなることが望
ましく、また、長尺状電極の幅が１０μｍ以下であるこ
とが望ましい。In particular, it is desirable that the piezoelectric body be made of a ferroelectric material, and that the width of the long electrode be 10 μm or less.
【００１６】[0016]
【作用】本発明の圧電共振子では、第１電極と第２電極
とが、それぞれ略平行に配列した複数の長尺状電極で構
成されており、これら第１電極と第２電極との長尺状電
極は基体側から見て交差しているために、第１電極と第
２電極との重なる部分が振動する領域（振動部）とな
り、その重なる領域の電極部分が、１つの振動部に対す
る電極（振動電極）となる。In the piezoelectric resonator according to the present invention, the first electrode and the second electrode are each constituted by a plurality of elongated electrodes arranged substantially in parallel with each other. Since the strip-shaped electrodes intersect when viewed from the base side, the overlapping portion of the first electrode and the second electrode becomes a vibrating region (vibrating portion), and the electrode portion of the overlapping region corresponds to one vibrating portion. It becomes an electrode (vibrating electrode).
【００１７】第１電極と第２電極との重なった領域で規
定される各振動部は、第１電極の振動電極、圧電体、お
よび第２電極の振動電極からなり、電極サイズは膜厚と
同程度の大きさにできるため、面内伝播モードがなくな
り、無電極部分との境界で反射定在波の発生を防いで不
要振動の発生を抑制することができる。これは、各振動
部の圧電体の周囲が、振動部間の圧電体で固定されるこ
とになるために、従来のような自由端の時に生ずる不要
な振動モードを抑制することができるからである。Each vibrating portion defined by the overlapping region of the first electrode and the second electrode includes a vibrating electrode of the first electrode, a piezoelectric body, and a vibrating electrode of the second electrode. Since the same size can be obtained, the in-plane propagation mode is eliminated, and the generation of the unnecessary vibration can be suppressed by preventing the generation of the reflected standing wave at the boundary with the electrodeless portion. This is because the surroundings of the piezoelectric body of each vibrating part are fixed by the piezoelectric body between the vibrating parts, so that unnecessary vibration modes that occur at the free end as in the related art can be suppressed. is there.
【００１８】一般に、振動体が小さくなるとインピーダ
ンスは大きくなり、１つの振動体のインピーダンスで
は、マイクロ波回路の伝送インピーダンスと整合がとれ
なくなる。しかし、本発明における各振動部は、振動が
同期されているために、振動部数を制御することによ
り、使用する回路とのインピーダンス整合をとることが
できる。換言すれば、インピーダンス整合は、電極の総
面積に起因するために、必要な面積に相当する数の振動
電極を形成することで必要なインピーダンスを得ること
ができる。In general, the smaller the vibrator, the higher the impedance, and the impedance of one vibrator cannot match the transmission impedance of the microwave circuit. However, since the vibrations in the present invention are synchronized, the impedance can be matched with the circuit to be used by controlling the number of vibrations. In other words, since the impedance matching is caused by the total area of the electrodes, the necessary impedance can be obtained by forming the number of vibrating electrodes corresponding to the required area.
【００１９】また、振動部を形成する圧電体が、比誘電
率の大きな強誘電体を主成分とすることで、非強誘電体
に比べて、振動部の静電容量を小さな面積で実現でき
る。Further, since the piezoelectric material forming the vibrating portion is mainly composed of a ferroelectric material having a large relative permittivity, the capacitance of the vibrating portion can be realized with a smaller area as compared with a non-ferroelectric material. .
【００２０】特に、長尺状電極の幅を１０μｍ以下とす
ることにより、各振動部を１０μｍ以下と十分小さくで
きるので、不要振動のない共振特性を示す、広帯域フィ
ルターとして適切な小型のＧＨｚ帯共振子を提供でき
る。In particular, by setting the width of the long electrode to 10 μm or less, each vibrating portion can be made sufficiently small to 10 μm or less. Can provide children.
【００２１】[0021]
【発明の実施の形態】本発明の圧電共振子は、基体上
に、支持膜、圧電薄膜、電極薄膜が形成された薄膜圧電
共振子であり、図１および図２に示すように、振動空間
Ａを有する基体１１と、該基体１１の表面に形成された
支持膜１２と、該支持膜１２上に形成された第１電極１
３と、該第１電極１３上に形成された圧電体１４と、該
圧電体１４上に形成された第２電極１５とから構成され
ている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A piezoelectric resonator according to the present invention is a thin-film piezoelectric resonator in which a support film, a piezoelectric thin film, and an electrode thin film are formed on a substrate. As shown in FIGS. A, a support film 12 formed on the surface of the base 11, and a first electrode 1 formed on the support film 12.
3, a piezoelectric body 14 formed on the first electrode 13, and a second electrode 15 formed on the piezoelectric body 14.
【００２２】第１電極１３は、等間隔で略平行に配列さ
れた５本の長尺状電極１６ａを有し、それらは基部電極
１７ａにより電気的に連結され、櫛型形状を成してい
る。また、第２電極１５も第１電極１３と同様の５本の
長尺状電極１６ｂを基部電極１７ｂにより電気的に連結
して構成されている。The first electrode 13 has five elongated electrodes 16a arranged in parallel at equal intervals, and they are electrically connected by a base electrode 17a to form a comb shape. . The second electrode 15 is also formed by electrically connecting five long electrodes 16b similar to the first electrode 13 by the base electrode 17b.
【００２３】そして、本発明の圧電共振子では、図２か
ら明らかなように、第１電極１３の長尺状電極１６ａと
第２電極１５の長尺状電極１６ｂが基体１１から見て交
差しており、これらの長尺状電極１６ａ、１６ｂの重な
る部分が、振動部１８とされている。振動部１８は長尺
状電極１６ａ、１６ｂが交差し、重なった部分に限定さ
れるため、定在波の種類が限定され、不要振動が発生し
にくくなる。In the piezoelectric resonator of the present invention, as is apparent from FIG. 2, the long electrode 16a of the first electrode 13 and the long electrode 16b of the second electrode 15 intersect as viewed from the base 11. A portion where the long electrodes 16a and 16b overlap is a vibrating portion 18. Since the vibrating portion 18 is limited to the portion where the long electrodes 16a and 16b intersect and overlap, the type of standing wave is limited, and unnecessary vibration is less likely to occur.
【００２４】基体１１は、Ｓｉのような無機物であり、
強誘電体薄膜を形成できる平坦な表面を保有していれ
ば、特に限定するものではない。基体１１の振動空間Ａ
は、第１電極１３と第２電極１５に印加された電圧によ
り励振された圧電体１４の振動を基体１１に伝達しない
ための空間であって、基体１１に貫通孔を形成したり、
図３のように基体１１の支持膜１２を形成する部分に凹
状の窪み１９を形成したりすることにより作製される。The substrate 11 is an inorganic substance such as Si,
There is no particular limitation as long as it has a flat surface on which a ferroelectric thin film can be formed. Vibration space A of base 11
Is a space for preventing the vibration of the piezoelectric body 14 excited by the voltage applied to the first electrode 13 and the second electrode 15 from being transmitted to the base 11, such as forming a through hole in the base 11,
As shown in FIG. 3, the substrate 11 is manufactured by forming a concave depression 19 in a portion where the support film 12 is formed.
【００２５】支持膜１２は、スパッタ法やＣＶＤ法等の
方法で形成され、音速が大きく、残留応力の小さいもの
が望まれる。厚みは、材料の音速に依存するが、低次の
圧電共振を用いるためには２μｍ以下の厚みが望まし
い。The support film 12 is formed by a method such as a sputtering method or a CVD method, and is desired to have a high sound speed and a small residual stress. The thickness depends on the sound speed of the material, but is preferably 2 μm or less in order to use low-order piezoelectric resonance.
【００２６】圧電体１４は、ゾル・ゲル法、又はセラミ
ック・スラリーを塗布し、加熱焼成する方法、あるいは
スパッタ法に代表される気相合成法等で形成することが
出来る。圧電体１４の膜厚は、２μｍ以下であることが
望ましい。これは、厚み縦振動により１ＧＨｚ以上の共
振周波数を得るためには、第１電極１３と第２電極１５
との間隔が２μｍ以下でなければならないからである。The piezoelectric body 14 can be formed by a sol-gel method, a method of applying a ceramic slurry and heating and firing, or a gas phase synthesis method represented by a sputtering method. The thickness of the piezoelectric body 14 is desirably 2 μm or less. This is because, in order to obtain a resonance frequency of 1 GHz or more by the thickness longitudinal vibration, the first electrode 13 and the second
Must be 2 μm or less.
【００２７】第１電極１３および第２電極１５は、ＣＶ
Ｄ法、スパッタ法、真空蒸着法、イオンプレーティング
法などの気相合成法により作製した後に、成膜した電極
を反応性イオンエッチング法などによって長尺状にエッ
チング加工して得られる。電極の膜厚は、０．０５〜
０．２μｍの厚みが望ましく、特には、０．０５〜０．
１μｍが好ましい。The first electrode 13 and the second electrode 15 are CV
It is obtained by forming a film-formed electrode into a long shape by a reactive ion etching method or the like after manufacturing by a gas phase synthesis method such as a D method, a sputtering method, a vacuum evaporation method, an ion plating method, or the like. The electrode thickness is 0.05 to
A thickness of 0.2 μm is desirable, and in particular, 0.05 to 0.1 μm.
1 μm is preferred.
【００２８】長尺状電極１６ａ、１６ｂの幅は１０μｍ
以下が良い。特には、７μｍ以下が望ましい。これは、
１０μｍを超えると不要振動が発生しやすくなるからで
ある。なお、第１電極１３の長尺状電極１６ａの幅が、
第２電極１５の長尺状電極１６ｂの幅と異なっても、電
極の幅が１０μｍ以下であれば何ら差し支えない。The width of the long electrodes 16a and 16b is 10 μm
The following is good. In particular, 7 μm or less is desirable. this is,
If the thickness exceeds 10 μm, unnecessary vibration is likely to occur. Note that the width of the long electrode 16a of the first electrode 13 is
Even if it is different from the width of the long electrode 16b of the second electrode 15, there is no problem if the width of the electrode is 10 μm or less.
【００２９】基体１１は、シリコンやアルミナのような
無機物であり、圧電体を形成できる平坦な表面を保有し
ていれば、特に材料を限定するものではない。The substrate 11 is made of an inorganic substance such as silicon or alumina, and is not particularly limited in material as long as it has a flat surface on which a piezoelectric body can be formed.
【００３０】支持膜１２としては、ＳｉＯ2 、Ａｌ2 Ｏ
3 、ＺｒＯ2 、ダイヤモンド、ＢＮ、Ｂ4 Ｃ、ＳｉＣ、
Ｓｉ3 Ｎ4 などが用いられる。これらの中でも音速が大
きく、残留歪みの小さい高強度膜が望ましい。中でもダ
イヤモンドは、高強度で、高音速でかつ弾性定数の温度
変化率が小さい事から特に望ましい。The support film 12 is made of SiO 2 , Al 2 O
3 , ZrO 2 , diamond, BN, B 4 C, SiC,
Si 3 N 4 or the like is used. Among these, a high-strength film having a high sound velocity and a small residual distortion is desirable. Among them, diamond is particularly desirable because it has high strength, high sound velocity, and a small rate of temperature change of the elastic constant.
【００３１】また、ＺｎＯやＡｌＮのような強誘電体で
ない圧電体を用いて共振子を構成する場合、面積が大き
くなり、小型な共振子を実現できないため、本発明の圧
電体１４には、比誘電率の大きい強誘電体が、特にその
薄膜が用いられる。When a resonator is formed using a piezoelectric material such as ZnO or AlN which is not a ferroelectric, the area becomes large and a small resonator cannot be realized. A ferroelectric substance having a large relative permittivity, particularly, a thin film thereof is used.
【００３２】特に、Ｐｂ（Ｚｒ1-X ＴｉX ）Ｏ3 のよう
なペロブスカイト型構造をもつ強誘電体薄膜は、大きな
自発分極を保有し、大きな圧電性が得られるとともに、
強誘電体でないＺｎＯ、ＡｌＮなどの圧電体に比べ比誘
電率が約１００倍と大きく、インピーダンスを決定する
要因の一つである電極面積を約１／１００と小さくでき
るため、共振子のサイズを小さくできる。In particular, a ferroelectric thin film having a perovskite structure such as Pb (Zr 1 -x Ti x ) O 3 has a large spontaneous polarization and a large piezoelectric property.
The relative dielectric constant is about 100 times larger than that of a non-ferroelectric piezoelectric substance such as ZnO or AlN, and the electrode area, which is one of the factors determining impedance, can be reduced to about 1/100. Can be smaller.
【００３３】ペロブスカイト型構造をもつ強誘電体とし
ては、上記Ｐｂ（Ｚｒ1-X ＴｉX ）Ｏ3 やＰｂＴｉ
Ｏ3 、ＢａＴｉＯ3 などがある。また、ペロブスカイト
構造以外の強誘電体薄膜、例えばタングステンブロンズ
構造をもつＳｒ2 ＫＮｂ5 Ｏ15なども使用できる。Examples of the ferroelectric having a perovskite structure include Pb (Zr 1 -x Ti x ) O 3 and PbTi.
O 3 and BaTiO 3 . Further, a ferroelectric thin film other than the perovskite structure, for example, Sr 2 KNb 5 O 15 having a tungsten bronze structure can also be used.
【００３４】強誘電体の中では、特にＰｂ（Ｚｒ1-X Ｔ
ｉX ）Ｏ3 を基本組成としたものが好ましい。Ｐｂ（Ｚ
ｒ1-X ＴｉX ）Ｏ3 を基本組成としたものは、薄膜にし
ても大きな圧電性と比誘電率を示すからである。ＢａＴ
ｉＯ3 やＳｒ2 ＫＮｂ5 Ｏ15などの強誘電体は結晶粒の
サイズが小さくなると強誘電性が減少するサイズ効果が
大きく、薄膜にすると強誘電性に起因した大きな圧電性
が得られ難いからである。Among the ferroelectrics, Pb (Zr 1 -X T
i X ) Those having a basic composition of O 3 are preferred. Pb (Z
This is because those having the basic composition of r 1-x Ti x ) O 3 show a large piezoelectricity and a relative dielectric constant even in a thin film. BaT
Ferroelectrics such as iO 3 and Sr 2 KNb 5 O 15 have a large size effect that the ferroelectricity decreases as the crystal grain size decreases, and it is difficult to obtain large piezoelectricity due to the ferroelectricity when a thin film is formed. It is.
【００３５】圧電体１４を挟持する第１電極１３、第２
電極１５には、従来より多く用いられているＡｌ、Ａｕ
等の金属材料が用いられる。圧電体１４への質量負荷が
小さく圧電振動を抑制し難い事と電気抵抗率が小さく共
振子のＱ値の低下が小さい事からＡｌが望ましい。The first electrode 13 sandwiching the piezoelectric body 14, the second electrode
The electrode 15 is made of Al, Au,
And the like. Al is desirable because the mass load on the piezoelectric body 14 is small and it is difficult to suppress the piezoelectric vibration, and the electrical resistivity is small and the decrease in the Q value of the resonator is small.
【００３６】尚、図１〜３において、実際に共振子とし
て使用するためには、第１電極１３、第２電極１５の基
部電極１７ａ、１７ｂには取り出し用の電極を形成する
ことは言うまでもない。In FIGS. 1 to 3, it is needless to say that extraction electrodes are formed on the base electrodes 17a and 17b of the first electrode 13 and the second electrode 15 in order to actually use the resonator. .
【００３７】以上のように構成された圧電体共振子で
は、圧電体１４に強誘電体を用いており、電極面積を小
さくできるとともに、電極の数を任意に決定できるため
に、総電極面積で決定されるインピーダンスも制御する
ことができる。In the piezoelectric resonator constructed as described above, a ferroelectric material is used for the piezoelectric body 14, so that the electrode area can be reduced and the number of electrodes can be arbitrarily determined. The determined impedance can also be controlled.
【００３８】また、各振動電極が小さく、各振動部の圧
電体１４ａは振動部間の圧電体１４ｂにより周囲を固定
されているために、不要振動は改善され、厚み縦振動の
エネルギーを１対の振動電極間に十分に閉じ込め、使用
する共振周波数、***振周波数近傍におけるスプリアス
を抑制することができる。Further, since each vibrating electrode is small and the periphery of the piezoelectric body 14a of each vibrating part is fixed by the piezoelectric body 14b between the vibrating parts, unnecessary vibration is improved, and the energy of the thickness longitudinal vibration is reduced by one. Can be sufficiently confined between the vibrating electrodes, and the spurious in the vicinity of the used resonance frequency and antiresonance frequency can be suppressed.
【００３９】図４は本発明の他の圧電共振子の例を示す
もので、この圧電共振子は、基体１１と、該基体１１の
表面に形成された複数の絶縁体（３２ａ、３２ｂ）の積
層体からなる振動反射層３２と、該振動反射層３２上に
形成された第１電極１３と、該第１電極１３上に形成さ
れた圧電体１４と、該圧電体１４上に形成された第２電
極１５とから構成されている。FIG. 4 shows another example of the piezoelectric resonator of the present invention. This piezoelectric resonator comprises a substrate 11 and a plurality of insulators (32a, 32b) formed on the surface of the substrate 11. A vibration reflection layer 32 formed of a laminate, a first electrode 13 formed on the vibration reflection layer 32, a piezoelectric member 14 formed on the first electrode 13, and a piezoelectric member 14 formed on the piezoelectric member 14. And the second electrode 15.
【００４０】絶縁体３２ａと３２ｂとは、音響インピー
ダンスの異なる２種類の材料であって、各層の厚みが、
圧電体１４の厚みの約半分であればよい。これは、圧電
体１４の厚み方向に、半波長の定在波が存在しており、
絶縁体をこの定在波の１／４の波長に相当する厚みにし
て積層することによって反射をすることができるためで
ある。このような振動反射層３２を用いると振動空間を
形成することなく基体の上に、共振子を形成でき、共振
子の強度を大きくすることができるとともに、製造プロ
セスを簡略化させ、製造コストを低減することができ
る。The insulators 32a and 32b are two types of materials having different acoustic impedances.
The thickness may be about half the thickness of the piezoelectric body 14. This is because a half-wave standing wave exists in the thickness direction of the piezoelectric body 14,
This is because reflection can be achieved by stacking insulators with a thickness corresponding to a quarter wavelength of the standing wave. When such a vibration reflection layer 32 is used, a resonator can be formed on a base without forming a vibration space, the strength of the resonator can be increased, the manufacturing process can be simplified, and the manufacturing cost can be reduced. Can be reduced.
【００４１】そして、図１においては、振動部１８と基
体１１とは、振動が伝わらないように振動空間Ａが形成
されていたが、図４においては音響インピーダンスの異
なる絶縁体３２ａと３２ｂとを積層して振動反射層３２
を形成しており、振動は振動反射層３２で反射されて、
振動部からの振動は基体に達しない。図４の構造は、図
１に比べてウェットプロセスである基体の穴加工がな
く、製造プロセスを簡素化できるとともに、振動部と共
に振動する支持膜を省くことができるので、図１に比べ
て更に振動周波数を高くでき、高周波化に対応しやすく
なる。In FIG. 1, a vibration space A is formed between the vibrating portion 18 and the base 11 so that vibration is not transmitted. In FIG. 4, however, insulators 32a and 32b having different acoustic impedances are used. Laminated vibration reflection layer 32
Is formed, and the vibration is reflected by the vibration reflection layer 32,
Vibration from the vibrating section does not reach the base. The structure of FIG. 4 does not require the boring of the base, which is a wet process, as compared with FIG. 1, simplifies the manufacturing process, and eliminates the support film that vibrates with the vibrating portion. The vibration frequency can be increased, and it becomes easier to cope with higher frequencies.
【００４２】さらに、図５に示すように、圧電体１４
は、音速の温度係数が逆符号の強誘電体からなる圧電体
１４ｃ、１４ｄの２層の積層体であっても良い。音速の
温度係数が逆符号の強誘電体からなる圧電体１４ｃ、１
４ｄは、例えば組成相境界近傍の組成のＰｂ（Ｚｒ1-X
ＴｉX ）Ｏ3 を用いることにより実現できる。この温度
係数が逆符号の強誘電体からなる圧電体１４ｃ、１４ｄ
を積層することにより、共振周波数の温度係数を零に近
づけた共振子を実現することができる。Further, as shown in FIG.
May be a laminate of two layers of piezoelectric bodies 14c and 14d made of a ferroelectric substance having a temperature coefficient of sound velocity opposite to that of the ferroelectric substance. Piezoelectric body 14c, 1 made of a ferroelectric whose temperature coefficient of sound velocity has the opposite sign
4d is, for example, Pb (Zr 1 -X) having a composition near the composition phase boundary.
This can be realized by using Ti x ) O 3 . The piezoelectric members 14c and 14d made of ferroelectrics having the opposite temperature coefficient are used.
, A resonator having a temperature coefficient of resonance frequency close to zero can be realized.
【００４３】また、図６に示すように、圧電体１４は、
分極の方向が互いに逆向きの強誘電体からなる圧電体１
４ｅ、１４ｆの２層の積層体であっても良い。このよう
な圧電共振子は、中間電極２０と第１電極１３及び第２
電極１５の間に、強誘電体からなる圧電体１４ｅ、１４
ｆの抗電界より大きい電界を印可することにより実現で
きる。高周波電界は第１電極１３と第２電極１５の間に
印可するが、分極方向が逆向きの２層の圧電体１４ｅ、
１４ｆの積層体を用いるため、第１電極１３と第２電極
１５との間に１波長の定在波が発生し、高周波化を促進
できる。As shown in FIG. 6, the piezoelectric body 14
Piezoelectric body 1 made of a ferroelectric whose polarization directions are opposite to each other
It may be a two-layer laminate of 4e and 14f. Such a piezoelectric resonator includes the intermediate electrode 20, the first electrode 13, and the second electrode 13.
Piezoelectric bodies 14 e and 14 made of a ferroelectric substance are provided between the electrodes 15.
This can be realized by applying an electric field larger than the coercive electric field of f. A high-frequency electric field is applied between the first electrode 13 and the second electrode 15, but two layers of piezoelectric bodies 14e having opposite polarization directions are provided.
Since the laminate of 14f is used, a standing wave of one wavelength is generated between the first electrode 13 and the second electrode 15, and the frequency can be increased.
【００４４】[0044]
【実施例】実施例１ まず、Ｓｉ基板の裏面に窒化珪素膜をＣＶＤ法により形
成した。次に、Ｓｉ基板の表面にＣＶＤ法によりダイヤ
モンド膜を形成した。窒化珪素膜は反応性イオンエッチ
ング法により、ビアーホール形成用のパターニングを行
った後に、ＫＯＨ溶液を用いてＳｉ基板を異方性エッチ
ングを行い、貫通孔（振動空間）を形成した。EXAMPLE 1 First, a silicon nitride film was formed on the back surface of a Si substrate by a CVD method. Next, a diamond film was formed on the surface of the Si substrate by a CVD method. The silicon nitride film was patterned by a reactive ion etching method for forming a via hole, and then anisotropically etched on the Si substrate using a KOH solution to form a through hole (vibration space).
【００４５】次に、マグネトロンスパッタ法を用いて、
ダイヤモンド膜上に、５００℃で１００ｎｍ膜厚のＡｕ
からなる第１電極を形成した。Next, using magnetron sputtering,
Au having a thickness of 100 nm at 500 ° C. on a diamond film
Was formed.
【００４６】フォトリソグラフ法を用いて長尺状電極お
よび基部電極を形成し、櫛型形状に加工した。次に、以
下に述べるように、長尺状電極の幅が３μｍ、７μｍ、
１０μｍと異なる３種類の共振器を作製した。A long electrode and a base electrode were formed by photolithography, and processed into a comb shape. Next, as described below, the width of the long electrode is 3 μm, 7 μm,
Three types of resonators different from 10 μm were manufactured.
【００４７】まず、幅３μｍ、長さ７０μｍの５本の長
尺状電極を５μｍの間隔で配置し、基部電極で連結した
もの、次に幅７μｍ、長さ８０μｍの３本の長尺状電極
を１０μｍの間隔で配置し、基部電極で連結したもの、
最後に幅１０μｍ、長さ１００μｍの２本の長尺状電極
を１０μｍの間隔で配置し、基部電極で連結したものを
それぞれ作製した。First, five long electrodes having a width of 3 μm and a length of 70 μm are arranged at intervals of 5 μm and connected by a base electrode, and then three long electrodes having a width of 7 μm and a length of 80 μm. Are arranged at an interval of 10 μm and connected by a base electrode,
Finally, two long electrodes having a width of 10 μm and a length of 100 μm were arranged at an interval of 10 μm and connected by a base electrode, respectively.
【００４８】その上に、ゾルゲル法により１μｍ膜厚の
ＰｂＺｒ0.53Ｔｉ0.47Ｏ3 薄膜を形成した。この圧電体
は以下のようにして作製した。まず、１Ｍ濃度の塗布溶
液をスピンコート法によりＳｉ基板の第１電極上に成膜
乾燥し、熱処理（４２０℃、１分間）と成膜を１０回繰
り返した後、６５０℃で３０分間結晶化処理を施し、１
μｍ膜厚の強誘電体薄膜を得た。次に、フォトリソグラ
フ法とエッチングにより強誘電体膜の不要部分を除去し
て、基部電極を露出した。A 1 μm thick PbZr 0.53 Ti 0.47 O 3 thin film was formed thereon by a sol-gel method. This piezoelectric body was manufactured as follows. First, a coating solution having a concentration of 1M is formed on the first electrode of the Si substrate by spin coating and dried, and heat treatment (420 ° C., 1 minute) and film formation are repeated 10 times, and then crystallization is performed at 650 ° C. for 30 minutes. Processing, 1
A ferroelectric thin film having a thickness of μm was obtained. Next, unnecessary portions of the ferroelectric film were removed by photolithography and etching to expose the base electrode.
【００４９】最後に、第２電極を作製した。膜厚１００
ｎｍのＰｔ電極膜をスパッタ法により５００℃で形成し
た。リフトオフ法を用いて櫛型形状に加工した。長尺状
電極の形状は第１電極と同じであるが、長尺状電極の数
は以下のようにした。幅３、７、１０μｍの長尺状電極
の数をそれぞれ５本、２本、２本とした。各長尺状電極
の方向は第１電極の長尺状電極と直交するように形成す
ることにより図１および図２に示した圧電共振子を作製
した。Finally, a second electrode was manufactured. Thickness 100
A Pt electrode film having a thickness of 500 nm was formed at 500 ° C. by a sputtering method. It was processed into a comb shape using a lift-off method. The shape of the long electrode was the same as the first electrode, but the number of the long electrodes was as follows. The number of long electrodes having a width of 3, 7, and 10 μm was set to 5, 2, and 2, respectively. The piezoelectric resonator shown in FIGS. 1 and 2 was produced by forming the direction of each elongated electrode so as to be orthogonal to the elongated electrode of the first electrode.
【００５０】次に、それについてＲＦインピーダンスア
ナライザ（ＨＰ４２９１Ａ）とＲＦプローブを用いて、
２０Ｖの直流電圧を１０秒間電極間に印可し、圧電体を
分極処理した。Next, using an RF impedance analyzer (HP4291A) and an RF probe,
A DC voltage of 20 V was applied between the electrodes for 10 seconds to polarize the piezoelectric body.
【００５１】次に、インピーダンス測定による圧電共振
特性評価を行ったところ、同様なインピーダンス特性を
示した。代表として長尺状電極幅７μｍの場合を図７に
示す。この図から、１．４ＧＨｚ〜１．５ＧＨｚにおい
て、インピーダンスが極小となる共振ピークと、極大と
なる***振ピークが観測された。Next, evaluation of piezoelectric resonance characteristics by impedance measurement showed similar impedance characteristics. FIG. 7 shows a typical case where the long electrode width is 7 μm. From this figure, at 1.4 GHz to 1.5 GHz, a resonance peak at which the impedance becomes a minimum and an anti-resonance peak at which the impedance becomes a maximum were observed.
【００５２】図７において、他のスプリアス振動に起因
するピークは観測されず、単一モードの振動のみが得ら
れた。また、長尺状電極幅３、１０μｍのピークも同様
であった。In FIG. 7, no peak due to other spurious vibration was observed, and only a single mode vibration was obtained. The same was true for the peaks of the long electrode widths of 3, 10 μm.
【００５３】実施例２ まず、Ｓｉ基板表面にスパッタ法により音響インピーダ
ンスの大きいタングステン膜と音響インピーダンスの小
さい酸化珪素膜とをそれぞれ交互に５層（約０．５μ
ｍ）ずつ形成し、振動反射層（１／４波長反射器）を形
成した。次に、振動反射層の表面に、実施例１と同様
に、第１電極、圧電体、第２電極を形成し、図４に示し
た圧電共振子を作製した。なお、第１電極、第２電極と
も長尺状電極の寸法は、幅７μｍ、長さ７０μｍであっ
た。Example 2 First, five layers (about 0.5 μm) of a tungsten film having a large acoustic impedance and a silicon oxide film having a small acoustic impedance were alternately formed on the surface of a Si substrate by sputtering.
m) to form a vibration reflection layer (1/4 wavelength reflector). Next, a first electrode, a piezoelectric body, and a second electrode were formed on the surface of the vibration reflection layer in the same manner as in Example 1, and the piezoelectric resonator shown in FIG. 4 was manufactured. In addition, the dimension of the long electrode in both the first electrode and the second electrode was 7 μm in width and 70 μm in length.
【００５４】実施例１と同様に、２０Ｖの直流電圧を１
０秒間電極間に印可して、圧電体を分極処理し、インピ
ーダンス測定による圧電共振特性評価を行った。As in the first embodiment, a DC voltage of 20 V
A voltage was applied between the electrodes for 0 second to polarize the piezoelectric body, and the piezoelectric resonance characteristics were evaluated by impedance measurement.
【００５５】図８に、インピーダンス特性を示す。１．
４ＧＨｚ〜１．５ＧＨｚにおいて、インピーダンスが極
小となる共振ピークと、極大となる***振ピークが観測
された。他のスプリアス振動に起因するピークは観測さ
れず、単一モードの振動のみが得られた。FIG. 8 shows the impedance characteristics. 1.
At 4 GHz to 1.5 GHz, a resonance peak at which the impedance becomes a minimum and an anti-resonance peak at which the impedance becomes a maximum were observed. No peak due to other spurious vibrations was observed, and only a single mode vibration was obtained.
【００５６】比較例 実施例１で作製した共振子と、作製方法、評価方法は同
じであるが、上部電極、下部電極の形状を櫛型形状では
なく、通常の一辺が１５μｍの正方形からなる第１、第
２電極を有する圧電共振子を作製した。COMPARATIVE EXAMPLE The manufacturing method and the evaluation method are the same as those of the resonator manufactured in Example 1, but the shape of the upper electrode and the lower electrode is not a comb shape, but is a normal square having one side of 15 μm. 1. A piezoelectric resonator having a second electrode was manufactured.
【００５７】図９に、インピーダンス特性を示す。共
振、***振ピークの間にスプリアス振動に起因したピー
クが観測された。FIG. 9 shows impedance characteristics. A peak caused by spurious vibration was observed between the resonance and antiresonance peaks.
【００５８】[0058]
【発明の効果】本発明の圧電共振子では、第１、第２電
極を、それぞれ略平行に配列した複数の長尺状電極を電
気的に接続して構成するとともに、第１電極の長尺状電
極と第２電極の長尺状電極とを、基体側から見て交差さ
せたので、電極の重なった部位のみで振動し、圧電体の
厚みと電極サイズを同程度にすることができ、これによ
り、不要な振動の発生を抑制することができ、不要振動
のない小型の共振子を実現できる。According to the piezoelectric resonator of the present invention, the first and second electrodes are formed by electrically connecting a plurality of elongated electrodes arranged substantially in parallel with each other, and the first and second electrodes are elongated. Since the cross-shaped electrode and the long electrode of the second electrode cross each other when viewed from the base side, they vibrate only at the portion where the electrodes overlap, and the thickness of the piezoelectric body and the electrode size can be made substantially the same, As a result, generation of unnecessary vibration can be suppressed, and a small resonator without unnecessary vibration can be realized.
【図１】本発明の圧電共振子の断面図である。FIG. 1 is a sectional view of a piezoelectric resonator of the present invention.
【図２】図１の平面図である。FIG. 2 is a plan view of FIG.
【図３】本発明の圧電共振子の他の例を示す断面図であ
る。FIG. 3 is a sectional view showing another example of the piezoelectric resonator of the present invention.
【図４】振動反射層を有する本発明の圧電共振子を示す
断面図である。FIG. 4 is a cross-sectional view showing a piezoelectric resonator of the present invention having a vibration reflection layer.
【図５】音速の温度係数の符号が互いに逆符号である２
層の強誘電体を有する本発明の圧電共振子の断面図であ
る。FIG. 5 is a diagram in which the signs of temperature coefficients of sound velocity are opposite signs to each other.
FIG. 3 is a cross-sectional view of a piezoelectric resonator of the present invention having a layer of ferroelectric.
【図６】分極の向きが互いに逆方向である２層の強誘電
体を有する本発明の圧電共振子の断面図である。FIG. 6 is a cross-sectional view of the piezoelectric resonator of the present invention having two layers of ferroelectrics whose polarization directions are opposite to each other.
【図７】実施例１の長尺状電極幅が７μｍの圧電共振子
のインピーダンス特性を示す図である。FIG. 7 is a diagram illustrating impedance characteristics of a piezoelectric resonator having a long electrode width of 7 μm in Example 1.
【図８】実施例２の圧電共振子のインピーダンス特性を
示す図である。FIG. 8 is a diagram illustrating impedance characteristics of the piezoelectric resonator of the second embodiment.
【図９】比較例の圧電共振子のインピーダンス特性を示
す図である。。FIG. 9 is a diagram illustrating impedance characteristics of a piezoelectric resonator of a comparative example. .
【図１０】従来の圧電共振子の構造の断面図である。FIG. 10 is a sectional view of a structure of a conventional piezoelectric resonator.
１１・・・基体 １２・・・支持膜 １３・・・第１電極 １４・・・圧電体 １５・・・第２電極 １６ａ、１６ｂ・・・長尺状電極 １８・・・振動部 ３２ａ、３２ｂ・・・絶縁体 ３２・・・振動反射層 Ａ・・振動空間 DESCRIPTION OF SYMBOLS 11 ... Base 12 ... Support film 13 ... 1st electrode 14 ... Piezoelectric body 15 ... 2nd electrode 16a, 16b ... Long electrode 18 ... Vibration part 32a, 32b ... Insulator 32 ... Vibration reflection layer A ... Vibration space
Claims (4)
前記振動空間を被覆して形成された支持膜と、該支持膜
の前記振動空間と反対の面に当接され、圧電体を第１電
極と第２電極とで挟持した振動体とを具備する圧電共振
子であって、前記第１電極および前記第２電極は、それ
ぞれ略平行に配列した複数の長尺状電極を電気的に接続
して形成され、かつ、前記第１電極の長尺状電極と前記
第２電極の長尺状電極とは、前記基体側から見て交差し
ていることを特徴とする圧電共振子。1. A substrate having a vibration space, a support film formed by covering the vibration space on the surface of the substrate, and a piezoelectric body abutted on a surface of the support film opposite to the vibration space. A piezoelectric resonator comprising a vibrating body sandwiched between a first electrode and a second electrode, wherein the first electrode and the second electrode electrically connect a plurality of elongated electrodes arranged substantially in parallel. And the long electrode of the first electrode and the long electrode of the second electrode intersect as viewed from the base.
縁体を積層してなる振動反射層と、該振動反射層の表面
に形成され、圧電体を第１電極と第２電極で挟持した振
動体とを具備する圧電共振子であって、前記第１電極お
よび前記第２電極は、それぞれ略平行に配列した複数の
長尺状電極を電気的に接続して形成され、かつ、前記第
１電極の長尺状電極と前記第２電極の長尺状電極とは、
前記基体側から見て交差していることを特徴とする圧電
共振子。2. A substrate, a vibration reflection layer formed on the surface of the substrate and formed by laminating a plurality of insulators, and a piezoelectric member formed on the surface of the vibration reflection layer, wherein the piezoelectric member is composed of a first electrode and a second electrode. A piezoelectric resonator comprising a vibrator sandwiched therebetween, wherein the first electrode and the second electrode are formed by electrically connecting a plurality of elongated electrodes arranged substantially in parallel with each other, and The long electrode of the first electrode and the long electrode of the second electrode,
A piezoelectric resonator intersecting when viewed from the base side.
る請求項１または２記載の圧電共振子。3. The piezoelectric resonator according to claim 1, wherein the piezoelectric body is made of a ferroelectric.
を特徴とする請求項１乃至３のうちいずれかに記載の圧
電共振子。4. The piezoelectric resonator according to claim 1, wherein the width of the long electrode is 10 μm or less.
Priority Applications (1)
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|---|---|---|---|
| JP15098199A JP3723697B2 (en) | 1999-05-31 | 1999-05-31 | Piezoelectric resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15098199A JP3723697B2 (en) | 1999-05-31 | 1999-05-31 | Piezoelectric resonator |
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| Publication Number | Publication Date |
|---|---|
| JP2000341077A true JP2000341077A (en) | 2000-12-08 |
| JP3723697B2 JP3723697B2 (en) | 2005-12-07 |
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|---|---|---|---|
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002175081A (en) * | 2000-09-26 | 2002-06-21 | Agere Systems Guardian Corp | Increased bandwidth thin film resonator having columnar structure |
| JP2003023337A (en) * | 2001-07-06 | 2003-01-24 | Murata Mfg Co Ltd | Piezoelectric resonator and filter |
| WO2003073611A1 (en) * | 2002-02-27 | 2003-09-04 | Tdk Corporation | Duplexer and manufacturing method thereof |
| US6914368B2 (en) | 2002-01-08 | 2005-07-05 | Murata Manufacturing Co., Ltd | Piezoelectric resonator, and piezoelectric filter, duplexer, and communication apparatus, all including same |
| JP2006180290A (en) * | 2004-12-22 | 2006-07-06 | Murata Mfg Co Ltd | Piezoelectric thin-film resonator |
| JP2007243587A (en) * | 2006-03-08 | 2007-09-20 | Ngk Insulators Ltd | Piezoelectric thin-film device |
| CN116918492A (en) * | 2021-03-09 | 2023-10-20 | 公益财团法人电磁材料研究所 | Vibration power generation element |
-
1999
- 1999-05-31 JP JP15098199A patent/JP3723697B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002175081A (en) * | 2000-09-26 | 2002-06-21 | Agere Systems Guardian Corp | Increased bandwidth thin film resonator having columnar structure |
| JP2003023337A (en) * | 2001-07-06 | 2003-01-24 | Murata Mfg Co Ltd | Piezoelectric resonator and filter |
| US6914368B2 (en) | 2002-01-08 | 2005-07-05 | Murata Manufacturing Co., Ltd | Piezoelectric resonator, and piezoelectric filter, duplexer, and communication apparatus, all including same |
| WO2003073611A1 (en) * | 2002-02-27 | 2003-09-04 | Tdk Corporation | Duplexer and manufacturing method thereof |
| US7078984B2 (en) | 2002-02-27 | 2006-07-18 | Tdk Corporation | Duplexer and method of manufacturing same |
| JP2006180290A (en) * | 2004-12-22 | 2006-07-06 | Murata Mfg Co Ltd | Piezoelectric thin-film resonator |
| JP4572679B2 (en) * | 2004-12-22 | 2010-11-04 | 株式会社村田製作所 | Piezoelectric thin film resonator |
| JP2007243587A (en) * | 2006-03-08 | 2007-09-20 | Ngk Insulators Ltd | Piezoelectric thin-film device |
| JP4739068B2 (en) * | 2006-03-08 | 2011-08-03 | 日本碍子株式会社 | Piezoelectric thin film device |
| CN116918492A (en) * | 2021-03-09 | 2023-10-20 | 公益财团法人电磁材料研究所 | Vibration power generation element |
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| Publication number | Publication date |
|---|---|
| JP3723697B2 (en) | 2005-12-07 |
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