JP2000311891A - SELECTIVE ETCHANT AND METHOD OF Ti-W - Google Patents
SELECTIVE ETCHANT AND METHOD OF Ti-WInfo
- Publication number
- JP2000311891A JP2000311891A JP11121122A JP12112299A JP2000311891A JP 2000311891 A JP2000311891 A JP 2000311891A JP 11121122 A JP11121122 A JP 11121122A JP 12112299 A JP12112299 A JP 12112299A JP 2000311891 A JP2000311891 A JP 2000311891A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etching solution
- phosphate
- solution
- solder bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＴｉ−Ｗのエッチングに
関し、具体的には、半導体装置上に形成される半田バンプ
製造におけるＴｉ−Ｗのエッチングに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the etching of Ti-W, and more particularly, to the etching of Ti-W in the manufacture of solder bumps formed on semiconductor devices.
【０００２】[0002]
【従来の技術】半導体装置の実装、接続技術である「フリ
ップチップ」はＩＢＭのＣ４のように半田バンプを用い
た実装、接続技術として知られている。従来半田バンプを
製造する方法として蒸着法とめっき法が知られている。
図５に従来のめっき法による、半田バンプの製造方法を
示す。2. Description of the Related Art "Flip chip" which is a mounting and connecting technique of a semiconductor device is known as a mounting and connecting technique using solder bumps like IBM's C4. Conventionally, a vapor deposition method and a plating method are known as methods for manufacturing solder bumps.
FIG. 5 shows a method of manufacturing a solder bump by a conventional plating method.
【０００３】半田バンプのめっきは、めっき前に、導電性
金属の連続した薄膜の形成を必要とする。この薄膜は半
田をめっきさせるために必要である。図５(ａ)は、の第１
の金属導電層としてクロム(Ｃｒ)膜２で表面が被覆され
た半導体基板１を示す。従来Ｃｒ膜２はバリア層として
用いられてきた。またこのＣｒ膜２は、半田をめっきする
ための金属導電層の一部分として機能する。Ｃｒ膜２の
上にはの第２の金属導電層として銅(Ｃｕ)膜３が全域に
付着される。薄膜２，３の上に後のステップで加えられ
た半田バンプ電極５およびめっきマスク４を示してい
る。[0003] Plating solder bumps requires the formation of a continuous thin film of conductive metal prior to plating. This thin film is necessary for plating the solder. FIG. 5A shows the first
1 shows a semiconductor substrate 1 whose surface is covered with a chromium (Cr) film 2 as a metal conductive layer. Conventionally, the Cr film 2 has been used as a barrier layer. The Cr film 2 functions as a part of a metal conductive layer for plating solder. On the Cr film 2, a copper (Cu) film 3 is deposited as a second metal conductive layer over the entire area. The solder bump electrode 5 and the plating mask 4 added in the later steps on the thin films 2 and 3 are shown.
【０００４】金属導電層が形成された後の第2ステップ
はフォトリソグラフィによるめっきマスクの形成であ
る。Ｃｕ膜３にフォトレジスト４を塗布し、露光、現像す
る。フォトレジスト４はめっきマスクとして残る。第3ス
テップはめっきマスク開口部への半田のめっきである。
半田バンプ５が形成された後、フォトレジスト４を除去
する。この時点で半導体基板は連続した第１及び第二の
金属導電層２、３と半田バンプ５とで覆われている。こ
れは図５(ｂ)に示されている。[0004] The second step after the formation of the metal conductive layer is the formation of a plating mask by photolithography. A photoresist 4 is applied to the Cu film 3, exposed and developed. The photoresist 4 remains as a plating mask. The third step is plating of solder on the plating mask opening.
After the solder bumps 5 are formed, the photoresist 4 is removed. At this point, the semiconductor substrate is covered with the continuous first and second metal conductive layers 2 and 3 and the solder bumps 5. This is shown in FIG.
【０００５】次の工程で、半田バンプ５をマスクとして
第１及び第二の金属導電層２、３を除去する。図５(ｃ)
は、第１及び第二の金属導電層２、３が除去されて、電気
的には分離されているが機械的には半導体基板に固定さ
れた半田バンプ電極５が残った状態を示す。これは第１
及び第二の金属導電層２，３をエッチング除去すること
によって達成される。いずれの場合にも半田バンプ電極
５がその下の第１及び第二の金属導電層２、３を保護す
る。図５(ｄ)は図５(ｃ)の半田バンプ電極５を溶融また
はリフローさせて形成される半田バンプ電極５を示す。
この時点で半田バンプ電極５が形成された半導体装置は
実装を行なうことができる。In the next step, the first and second metal conductive layers 2 and 3 are removed using the solder bumps 5 as a mask. FIG. 5 (c)
Shows a state in which the first and second metal conductive layers 2 and 3 have been removed, and the solder bump electrodes 5 that are electrically separated but mechanically fixed to the semiconductor substrate remain. This is the first
And by removing the second metal conductive layers 2 and 3 by etching. In each case, the solder bump electrode 5 protects the underlying first and second metal conductive layers 2 and 3. FIG. 5D shows the solder bump electrode 5 formed by melting or reflowing the solder bump electrode 5 of FIG. 5C.
At this time, the semiconductor device on which the solder bump electrodes 5 are formed can be mounted.
【０００６】従来の技術で第１の金属導電層２としてＣ
ｒの他には、チタン(Ｔｉ)およびタングステン(Ｗ)の合
金も「バリア」層として使用されてきた。Ｔｉ−Ｗは金属
性であって電気を通す。Ｔｉ−Ｗはスパッタリングなど
従来の技術で形成できる。Ｔｉ−Ｗを使用する場合、製造
のどの段階でそのＴｉ−Ｗを除去するか、またどのよう
な方法で除去するかが重要である。In the prior art, C is used as the first metal conductive layer 2.
Besides r, alloys of titanium (Ti) and tungsten (W) have also been used as "barrier" layers. Ti-W is metallic and conducts electricity. Ti-W can be formed by a conventional technique such as sputtering. When using Ti-W, it is important at what stage of manufacturing to remove the Ti-W and by what method.
【０００７】[0007]
【発明が解決しようとする課題】従来、Ｔｉ−Ｗのエッ
チング液としてエチレンジアミン四酢酸、アンモニア水、
過酸化水素水および水の混合液が使用されてきた。しか
し、この種のエッチング液はＴｉ−Ｗのサイドエッチン
グが生じる事が知られている(特開平７−２０１８６
０)。このサイドエッチングが半田バンプ電極５下で生じ
ると半田バンプ電極５があるためにサイドエッチング量
を検査する事ができないため品質を確認できない。さら
に、サイドエッチングにより半田バンプ電極５と半導体
基板１との密着面積が減少してしまうため従来と同じ密
着面積を維持するためにはＴｉ−Ｗのサイドエッチング
分半田バンプ電極５を大きくしなければならなる。これ
は、微細化を妨げる問題となる。このためＴｉ−Ｗをバ
リア層として用いる場合には、フォトレジストを用いて
Ｔｉ−Ｗパターニングを行ないサイドエッチング量等の
検査を行ない密着面積を維持する。しかし、この方法を
用いて半田バンプ電極５を製造する場合、Ｔｉ−Ｗパタ
ーニングの第一工程とその後の半田バンプ５を形成する
第二工程からなり第１の金属導電膜２（バリア層）とし
てＣｒを用いた場合より工程数増大するという問題が生
じる。Conventionally, as an etching solution for Ti-W, ethylenediaminetetraacetic acid, aqueous ammonia,
A mixture of aqueous hydrogen peroxide and water has been used. However, it is known that this type of etching solution causes side etching of Ti-W (Japanese Patent Laid-Open No. 7-20186).
0). If this side etching occurs under the solder bump electrode 5, the quality cannot be confirmed because the amount of side etching cannot be inspected due to the presence of the solder bump electrode 5. Further, since the contact area between the solder bump electrode 5 and the semiconductor substrate 1 is reduced by the side etching, in order to maintain the same contact area as in the related art, the solder bump electrode 5 must be made larger by the side etching of Ti-W. Become. This is a problem that hinders miniaturization. For this reason, when using Ti-W as a barrier layer, a Ti-W patterning is performed using a photoresist, an inspection of a side etching amount or the like is performed, and an adhesion area is maintained. However, when the solder bump electrode 5 is manufactured using this method, the first metal conductive film 2 (barrier layer) comprises a first step of Ti-W patterning and a subsequent second step of forming the solder bump 5. There is a problem that the number of steps is increased as compared with the case where Cr is used.
【０００８】特開平４−１０４３０号でＴｉ−Ｗをパタ
ーニング後に半田バンプを形成しており、半田バンプを
マスクとしてＴｉ−Ｗのエッチングを行なっていない。
したがって、本発明は、半田バンプ電極をマスクとしてＴ
ｉ−Ｗをエッチングしかつ、Ｔｉ−Ｗにサイドエッチン
グが生じないエッチング液とエッチング方法を示し、こ
れにより半田バンプ電極とＴｉ−Ｗの密着面積を減少さ
せずにかつＴｉ−Ｗをバリア層として用いた従来の半田
バンプ製造工程を短縮し、高品質な半田バンプ電極を簡
便に提供するものである。In Japanese Patent Application Laid-Open No. Hei 4-10430, a solder bump is formed after patterning Ti-W, and the Ti-W is not etched using the solder bump as a mask.
Therefore, according to the present invention, T
An etching solution and an etching method that etch i-W and do not cause side-etching in Ti-W are shown, thereby reducing the adhesion area between the solder bump electrode and Ti-W and using Ti-W as a barrier layer. The conventional solder bump manufacturing process used is shortened, and a high-quality solder bump electrode is easily provided.
【０００９】[0009]
【課題を解決するための手段】前記課題を解決するため
に本発明は３０ｗｔ％過酸化水素水と、りん酸塩を０．
０１〜０．１ｍｏｌ／Ｌの割合で溶解した溶液を１：１
〜５００の体積比で混合した混合液からなるエッチング
液とエッチング方法である。In order to solve the above-mentioned problems, the present invention comprises 30 wt% aqueous hydrogen peroxide and 0.1% phosphate.
The solution dissolved at a rate of 01 to 0.1 mol / L is 1: 1
An etching solution comprising a mixed solution mixed at a volume ratio of ~ 500 and an etching method.
【００１０】[0010]
【発明の実施の形態】本発明はＳｎ−Ｐｂ半田と、Ａｌ
−Ｓｉ、Al−Ｓｉ−ＣｕとＣｕの存在下でＴｉ−Ｗ膜を
選択的にエッチングする方法に関する。またその選択的
エッチング．プロセスに使用するエッチング液に関す
る。この方法は、半導体装置基板に付着するＴｉ−Ｗ層と
Ｔｉ−Ｗ上にあるＣｕとを含む連続した金属導電層上へ
のＳｎ−Ｐｂ半田バンプのめっきを必要とする半導体装
置製造のためのものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention relates to Sn-Pb solder and Al
The present invention relates to a method for selectively etching a Ti-W film in the presence of -Si, Al-Si-Cu and Cu. Also, its selective etching. It relates to an etchant used in the process. This method is used for manufacturing semiconductor devices that require plating of Sn-Pb solder bumps on a continuous metal conductive layer containing a Ti-W layer attached to the semiconductor device substrate and Cu on Ti-W. Things.
【００１１】本発明はＳｎ−Ｐｂ、 Ａｌ−Ｓｉ、Al−Ｓ
ｉ−Ｃｕ、およびＣｕの半導体製造装置を損傷する事の
ないＴｉ−Ｗの除去法を対象とする。図１（ａ）に本発
明のエッチング．プロセスを説明するための試料断面図
である。試料は半導体基板１１としてシリコン(Ｓｉ)ウ
エハ上に図示しないがシリコン酸化膜、Ａｌ−Ｓｉ，シ
リコン窒化膜を形成されている。この半導体基板１１に、
第１の金属導電膜１２として０．１５ミクロンのＴｉ−
Ｗと、第２の金属導電膜１３として０．５ミクロンのＣ
ｕをスパッタリングして形成する。その上に、めっきマ
スクとしてフォトマスク１４を形成する。この半導体基
板１１にＣｕを２０ミクロン、Ｓｎ−Ｐｂ(６:４)を２０
ミクロンをめっきし半田バンプ電極(１５を形成する。半
田バンプ電極１５形成後めっきマスクであるフォトレジ
スト１４を有機溶剤とレジストアッシングで除去する。
図１（ｂ）の試料が得られる。The present invention relates to Sn-Pb, Al-Si, Al-S
The present invention is directed to a method for removing i-Cu and Ti-W without damaging a semiconductor manufacturing apparatus for Cu. FIG. 1 (a) shows the etching of the present invention. It is a sample sectional view for explaining a process. The sample has a silicon oxide film, an Al-Si, and a silicon nitride film (not shown) formed on a silicon (Si) wafer as a semiconductor substrate 11. On this semiconductor substrate 11,
0.15 μm Ti—
W and C of 0.5 μm as the second metal conductive film 13
u is formed by sputtering. A photomask 14 is formed thereon as a plating mask. 20 μm of Cu and 20 μm of Sn—Pb (6: 4)
A micron is plated to form a solder bump electrode (15). After the formation of the solder bump electrode 15, the photoresist 14 serving as a plating mask is removed by an organic solvent and resist ashing.
The sample of FIG. 1B is obtained.
【００１２】（実施例１）図４（ｂ）に示した試料を、
室温で通常市販されている３０ｗｔ％過酸化水素水１リ
ットルにアンモニア水５０ｃｃに水９リットルからなる
溶液に浸漬して、エッチングした。この溶液は実験用試
料のＴｉ−Ｗを１０分でエッチング(０．０１５ミクロ
ン／分)したが著しく不規則なアンダーカッティングす
なわちアンダーエッチングが生じた。Ｓｎ−Ｐｂ、Ｃｕお
よびＡｌ−Ｓｉ、Al-Ｓｉ−Ｃｕへのエッチングはほとん
ど見られなかった。Example 1 The sample shown in FIG.
It was immersed in a solution of 9 liters of water in 50 liters of ammonia water in 1 liter of a commercially available 30 wt% hydrogen peroxide solution at room temperature for etching. This solution etched the experimental sample Ti-W in 10 minutes (0.015 micron / min) but resulted in significantly irregular undercutting, ie, underetching. Almost no etching was observed on Sn-Pb, Cu, Al-Si, and Al-Si-Cu.
【００１３】（実施例２）次の例では、上記溶液のアン
モニア水を０．５ｃｃに減らした。この溶液はＴｉ−Ｗ
を４０分でエッチングした(０．００３７５ミクロン／
分)。上記より少ないがめっきしたＣｕに沿ってＴｉ−Ｗ
のアンダーエッチングが見られた。またＳｎ−Ｐｂ、Ｃｕ
およびＡｌ−Ｓｉへのエッチングはほとんど見られなか
った。Example 2 In the following example, the amount of aqueous ammonia in the above solution was reduced to 0.5 cc. This solution is Ti-W
Was etched in 40 minutes (0.00375 microns /
Minutes). Ti-W along the less but plated Cu
Under-etching was observed. Sn-Pb, Cu
And almost no etching on Al-Si was observed.
【００１４】アンモニア水を減らす事すなわちｐＨを下
げる事でＴｉ−Ｗのアンダーカッティングを低減できる
ことがわかったが、エッチング速度が低下した。 （実施例３）次の例でｐＨ調整のためにアンモニア水に
代わりりん酸２水素カリウム−りん酸水素２ナトリウム
の緩衝溶液を用いた。ｐＨは７．０〜９．２に調整した。
これによりＴｉ−Ｗのアンダーカッティングは見られな
くた。これを図１(ｃ)に示す。また、図１(ｄ)にこの半田
バンプ電極をリフローしたものを示す。[0014] It has been found that the undercutting of Ti-W can be reduced by reducing the amount of ammonia water, that is, by lowering the pH, but the etching rate is lowered. (Example 3) In the following example, a buffer solution of potassium dihydrogen phosphate-disodium hydrogen phosphate was used in place of ammonia water for pH adjustment. The pH was adjusted to 7.0-9.2.
As a result, undercutting of Ti-W was not observed. This is shown in FIG. FIG. 1D shows a reflowed solder bump electrode.
【００１５】図２に示したように、エッチング速度はり
ん酸水素２ナトリウムの濃度の上げる事で高める事がで
きる事が解った。また、図３に示したように過酸化水素
水の濃度を上げる事でエッチング速度を高める事ができ
る事が解った。更に、図４に示したように、エッチング
液の温度を上げる事で、エッチング速度を高めることが
できる事が解った。As shown in FIG. 2, it has been found that the etching rate can be increased by increasing the concentration of disodium hydrogen phosphate. In addition, it was found that the etching rate can be increased by increasing the concentration of the hydrogen peroxide solution as shown in FIG. Further, as shown in FIG. 4, it was found that the etching rate can be increased by increasing the temperature of the etching solution.
【００１６】つまり、好ましいエッチング液は３０ｗｔ
％過酸化水素水と、りん酸塩を０．０１〜０．１ｍｏｌ
／Ｌの割合で溶解した溶液を１：１〜５００体積比で混
合した混合液からなるエッチング液である。好ましいり
ん酸塩はりん酸水素２ナトリウムとりん酸２水素カリウ
ムである。また、エッチング温度は２０〜６０℃の温度
で使用することがのぞましい。更に、エッチング液のｐ
Ｈはアルカリ性に保つことがのぞましい。That is, a preferable etching solution is 30 wt.
% Hydrogen peroxide and 0.01 to 0.1 mol of phosphate
/ L is an etching solution composed of a mixed solution obtained by mixing solutions dissolved at a ratio of 1 / L to 1: 1 to 500 by volume. Preferred phosphates are disodium hydrogen phosphate and potassium dihydrogen phosphate. Further, it is preferable that the etching temperature is 20 to 60 ° C. Further, the etching solution p
H is desirably kept alkaline.
【００１７】このエッチング液は５０℃で毎分０．０３
７５ミクロンのＴｉ−Ｗを除去する。これはＳｎ−Ｐｂ、
Ａｌ−Ｓｉ−Ｃｕ、Ｃｕをエッチングしない。これは短
いスループットのエッチングプロセスとして使用可能で
ある。前記エッチング液を用いて実際に機能する半導体
装置上に半田バンプを製造した。この半田バンプの検査、
せん断強度試験の結果、半田バンプへの顕著なエッチン
グ、Ｔｉ−Ｗへの顕著なサイドエッチング、半田バンプ、
Ｔｉ−Ｗ、基板間の剥離は見られなかった。The etching solution is 0.03 / min at 50 ° C.
Remove 75 microns of Ti-W. This is Sn-Pb,
Al-Si-Cu and Cu are not etched. This can be used as a short throughput etching process. Using the etching solution, solder bumps were manufactured on semiconductor devices that actually functioned. Inspection of this solder bump,
As a result of the shear strength test, noticeable etching on solder bumps, noticeable side etching on Ti-W, solder bumps,
No separation between Ti-W and the substrate was observed.
【００１８】[0018]
【発明の効果】本発明によって得られたＴｉ−Ｗを選択
的にエッチングするためのエッチング液とエッチング方
法は、半導体基板上に形成された半田バンプ電極エッチ
ングせずに半田バンプ電極をマスクとしてＴｉ−Ｗをエ
ッチングし、かつ、Ｔｉ−Ｗのサイドエッチングが無い。
したがって、Ｔｉ−Ｗをエッチングするためのだけのフ
ォトリソグラフィおよびエッチングのステップを必要と
しないのでプロセスを簡略化できる。また、チップ．パッ
ケージを形成するＳｎ−Ｐｂ、Ａｌ−Ｓｉ−Ｃｕ、Ｃｕ
などの金属構造に損傷を与える事なく、実用的なエッチ
ング速度を示しチップ．パッケージに半田バンプ電極を
形成する際に有用なエッチング液とエッチング方法であ
る。According to the present invention, an etching solution and an etching method for selectively etching Ti-W obtained by the present invention can be used for etching a solder bump electrode formed on a semiconductor substrate without using the solder bump electrode as a mask. -W is etched, and there is no side etching of Ti-W.
Therefore, the process can be simplified because photolithography and etching steps only for etching Ti-W are not required. In addition, chip. Sn-Pb, Al-Si-Cu, Cu forming a package
Chip that shows a practical etching rate without damaging metal structures such as chips. An etchant and an etching method useful for forming a solder bump electrode on a package.
【図１】図１は、本発明を用いた実施例の半田バンプの
製造工程を示す断面図である。。FIG. 1 is a cross-sectional view showing a manufacturing process of a solder bump according to an embodiment using the present invention. .
【図２】図２は、Ｔｉ−Ｗエッチング液のりん酸水素２
ナトリウムの濃度に対する効果を示すグラフである。FIG. 2 shows a hydrogen phosphate 2 of a Ti-W etching solution.
4 is a graph showing the effect on sodium concentration.
【図３】図３は、Ｔｉ−Ｗエッチング液の過酸化水素水
の濃度に対する効果のグラフである。FIG. 3 is a graph showing the effect of a Ti-W etching solution on the concentration of hydrogen peroxide solution.
【図４】図４は、Ｔｉ−Ｗエッチング液の温度に対する
効果のグラフである。FIG. 4 is a graph of the effect of Ti-W etchant on temperature.
【図５】図５は、従来技術の工程を示す断面図である。FIG. 5 is a cross-sectional view showing a conventional process.
１・・・・・・半導体基板 ２・・・・・・第１の金属導電層 ３・・・・・・第２の金属導電層 ４・・・・・・フォトレジスト ５・・・・・・半田バンプ電極 １１・・・・半導体基板 １２・・・・Ｔｉ−Ｗ １３・・・・Ｃｕ １４・・・・めっきマスク １５・・・・半田バンプ電極 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate 2 ... 1st metal conductive layer 3 ... 2nd metal conductive layer 4 ... Photoresist 5 ... · Solder bump electrode 11 ··· Semiconductor substrate 12 ··· Ti-W 13 ··· Cu 14 ··· Plating mask 15 ··· Solder bump electrode
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１２年６月６日（２０００．６．６）[Submission date] June 6, 2000 (2000.6.6)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【請求項４】 前記金属りん酸塩がりん酸水素２ナトリ
ウムであることを特徴とする請求項１に記載のエッチン
グ液。 4. The etching solution according to claim 1 you, wherein the metal phosphate salt is disodium hydrogen phosphate.
【請求項５】 前記金属りん酸塩がりん酸水素２ナトリ
ウムとりん酸２水素カリウムからなることを特徴とする
請求項１に記載のエッチング液。 5. The etching solution according to claim 1, wherein the metal phosphate salt consists of potassium dihydrogen phosphate disodium hydrogen and phosphate.
【請求項６】 前記金属がアルミニウム、シリコンおよ
び銅からなる群から選択された金属を含有する事を特徴
とする請求項１に記載のエッチング液。 6. The etching solution according to claim 1, characterized in that contains a metal in which the metal is selected from the group consisting of aluminum, silicon and copper.
【請求項７】 前記エッチング液が７．０より高いｐＨ
を有するように調整されている事を特徴とする請求項１
に記載のエッチング液。 7. The method according to claim 1, wherein said etching solution has a pH higher than 7.0.
2. The apparatus according to claim 1, wherein the apparatus is adjusted to have
An etching solution according to item 1.
【請求項８】 前記エッチング液が２０〜６０℃の温度
に保たれている事を特徴とする請求項１に記載のエッチ
ング液。 8. The etching solution according to claim 1, characterized in that the etchant is maintained at a temperature of 20 to 60 ° C..
【請求項９】 前記３０ｗｔ％過酸化水素水の濃度がそ
れ以上または以下で、混合後に前記請求項１に記載のエ
ッチング液と同等の過酸化水素水の濃度になるように調
整してある請求項１に記載のエッチング液。 9. Concentration of the 30 wt% aqueous hydrogen peroxide at more or less, claims are adjusted to a concentration of the etching solution equivalent to hydrogen peroxide according to after mixing in claim 1 Item 7. The etching solution according to Item 1.
【請求項１０】 除去されるＴｉおよびＷ、ならびにＡ
ｌ、Ａｌ−Ｓｉ、Ａｌ−Ｓｉ−Ｃｕ、Ａｌ−Ｃｕ、Ｃｕ、Ａ
ｇ、Ｂｉ、Ｉｎ、Ｐｂ、Ｓｎ、Ｓｎ−Ｐｂ、Ｓｎ−Ａｇ、Ｓｎ
−Ｂｉ、Ｓｎ−Ａｇ−Ｃｕ、Ｓｎ−Ａｇ−Ｂｉ、Ｓｎ−Ａ
ｇ−Ｉｎ、Ｓｎ−Ａｇ−Ｃｕ−Ｂｉ、Ｓｎ−Ａｇ−Ｃｕ−
Ｉｎ、およびＳｎ−Ａｇ−Ｃｕ−Ｂｉ−Ｉｎからなる群
から選択される、保護される金属を含む半導体装置にお
ける、Ｔｉ−Ｗを選択的に溶解する方法において、水１リ
ットルにつき金属りん酸塩０．０１〜０．１ｍｏｌを溶
解するステップと、その溶液と３０ｗｔ％の過酸化水素
水を１〜５００：１の体積比で混合して混合液を作成す
るステップと、その混合液を２０〜６０℃の温度に保つ
ステップと、前記半導体装置をその混合液で濡らしＴｉ
−Ｗを除去するステップとを含むエッチング方法。 10. Ti and W to be removed, and A
1, Al-Si, Al-Si-Cu, Al-Cu, Cu, A
g, Bi, In, Pb, Sn, Sn-Pb, Sn-Ag, Sn
-Bi, Sn-Ag-Cu, Sn-Ag-Bi, Sn-A
g-In, Sn-Ag-Cu-Bi, Sn-Ag-Cu-
In a method for selectively dissolving Ti-W in a semiconductor device containing a protected metal selected from the group consisting of In, and Sn-Ag-Cu-Bi-In, a metal phosphate per liter of water is provided. Dissolving 0.01 to 0.1 mol; mixing the solution with 30 wt% aqueous hydrogen peroxide at a volume ratio of 1 to 500: 1 to form a mixed solution; Maintaining the semiconductor device at a temperature of 60 ° C .;
-Removing W.
【請求項１１】 前記エッチング液がｐＨ７．０より高
いｐＨを有するように調整されている事を特徴とする請
求項１０に記載のエッチング方法。 11. The etching method according to請<br/> Motomeko 10 you characterized by being adjusted so that the etching solution has a pH greater than pH 7.0.
フロントページの続き Ｆターム(参考） 4K057 WA13 WB08 WB15 WE04 WE25 WG06 WN01 WN02 5F043 AA26 BB18 DD07 DD30 GG04 GG10 Continuation of the front page F term (reference) 4K057 WA13 WB08 WB15 WE04 WE25 WG06 WN01 WN02 5F043 AA26 BB18 DD07 DD30 GG04 GG10
Claims (13)
下でＴｉ−Ｗをエッチングするためのエッチング液であ
って、３０ｗｔ％過酸化水素水と０．０１〜０．１ｍｏ
ｌ／Ｌの割合で溶解したりん酸塩の溶液の体積比が１：
１〜５００の混合液からなるエッチング液。1. An etching solution for etching Ti-W in the presence of a metal which must not be etched, comprising 30 wt% hydrogen peroxide and 0.01 to 0.1 mol.
The volume ratio of the phosphate solution dissolved at a ratio of 1 / L is 1:
An etching solution comprising a mixed solution of 1 to 500.
とする、請求項１に記載のエッチング液。2. The etching solution according to claim 1, wherein the metal contains lead solder.
を特徴とする請求項１に記載のエッチング液。3. The etching solution according to claim 1, wherein said metal contains lead and tin solder.
を特徴とする請求項１に記載のエッチング液。4. The etching solution according to claim 1, wherein the phosphate is a metal phosphate.
であることを特徴とする、請求項１に記載のエッチング
液。5. The etching solution according to claim 1, wherein said phosphate is disodium hydrogen phosphate.
とりん酸２水素カリウムからなることを特徴とする請求
項１に記載のエッチング液。6. The etching solution according to claim 1, wherein the phosphate comprises disodium hydrogen phosphate and potassium dihydrogen phosphate.
び銅からなる群から選択された金属を含有する事を特徴
とする請求項１に記載のエッチング液。7. The etching solution according to claim 1, wherein the metal contains a metal selected from the group consisting of aluminum, silicon and copper.
を有するように調整されている事を特徴とする請求項１
に記載のエッチング液。8. The method according to claim 1, wherein the etching solution has a pH higher than 7.0.
2. The apparatus according to claim 1, wherein the apparatus is adjusted to have
An etching solution according to item 1.
に保たれている事を特徴とする請求項１に記載のエッチ
ング液。9. The etching solution according to claim 1, wherein the etching solution is maintained at a temperature of 20 to 60 ° C.
それ以上または以下で、混合後に前記請求項１に記載の
エッチング液と同等の過酸化水素水の濃度になるように
調整してある請求項１に記載のエッチング液。10. The concentration of the 30 wt% hydrogen peroxide solution is higher or lower, and is adjusted so that after mixing, the concentration of the hydrogen peroxide solution becomes equal to that of the etching solution according to claim 1. Item 7. The etching solution according to Item 1.
ｌ、Ａｌ−Ｓｉ、Ａｌ−Ｓｉ−Ｃｕ、Ａｌ−Ｃｕ、Ｃｕ、Ａ
ｇ、Ｂｉ、Ｉｎ、Ｐｂ、Ｓｎ、Ｓｎ−Ｐｂ、Ｓｎ−Ａｇ、Ｓｎ
−Ｂｉ、Ｓｎ−Ａｇ−Ｃｕ、Ｓｎ−Ａｇ−Ｂｉ、Ｓｎ−Ａ
ｇ−Ｉｎ、Ｓｎ−Ａｇ−Ｃｕ−Ｂｉ、Ｓｎ−Ａｇ−Ｃｕ−
Ｉｎ、およびＳｎ−Ａｇ−Ｃｕ−Ｂｉ−Ｉｎからなる群
から選択される、保護される金属を含む半導体装置にお
ける、Ｔｉ−Ｗを選択的に溶解する方法において、水１リ
ットルにつきりん酸塩０．０１〜０．１ｍｏｌを溶解す
るステップと、その溶液と３０ｗｔ％の過酸化水素水を
１〜５００：１の体積比で混合して混合液を作成するス
テップと、その混合液を２０〜６０℃の温度に保つステ
ップと、前記半導体装置をその混合液で濡らしＴｉ−Ｗ
を除去するステップとを含むエッチング方法。11. Ti and W to be removed, and A
1, Al-Si, Al-Si-Cu, Al-Cu, Cu, A
g, Bi, In, Pb, Sn, Sn-Pb, Sn-Ag, Sn
-Bi, Sn-Ag-Cu, Sn-Ag-Bi, Sn-A
g-In, Sn-Ag-Cu-Bi, Sn-Ag-Cu-
In a method for selectively dissolving Ti-W in a semiconductor device containing a protected metal selected from the group consisting of In, and Sn-Ag-Cu-Bi-In, the method comprises the steps of: .01 to 0.1 mol, a step of mixing the solution with 30 wt% of hydrogen peroxide in a volume ratio of 1 to 500: 1 to form a mixed solution, and a step of mixing the mixed solution with 20 to 60 mol%. C. temperature, and wet the semiconductor device with the mixture to obtain Ti-W
Removing step.
とを特徴とする、請求項１１に記載のエッチング方法。12. The etching method according to claim 11, wherein the phosphate is a metal phosphate.
いｐＨを有するように調整されている事を特徴とする、
請求項１１に記載のエッチング方法。13. The method according to claim 1, wherein the etching solution is adjusted to have a pH higher than pH 7.0.
The etching method according to claim 11.
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|---|---|---|---|
| JP12112299A JP3184180B2 (en) | 1999-04-28 | 1999-04-28 | Ti-W selective etching solution and etching method thereof |
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|---|---|---|---|
| JP12112299A JP3184180B2 (en) | 1999-04-28 | 1999-04-28 | Ti-W selective etching solution and etching method thereof |
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