JP2000307147A - Semiconductor light emitting device and its manufacture - Google Patents
Semiconductor light emitting device and its manufactureInfo
- Publication number
- JP2000307147A JP2000307147A JP11663899A JP11663899A JP2000307147A JP 2000307147 A JP2000307147 A JP 2000307147A JP 11663899 A JP11663899 A JP 11663899A JP 11663899 A JP11663899 A JP 11663899A JP 2000307147 A JP2000307147 A JP 2000307147A
- Authority
- JP
- Japan
- Prior art keywords
- emitting device
- gaasp
- semiconductor light
- thickness
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、特に低温環境下で
の信頼性が向上した半導体発光装置及びその製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having improved reliability especially in a low temperature environment and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図４はこの種の一般的な半導体発光装置
の構成を示す斜視図であり、ＧａＰ、ＧａＡｓＰ系のＬ
ＥＤチップの構造を示している。2. Description of the Related Art FIG. 4 is a perspective view showing the structure of a general semiconductor light emitting device of this type.
1 shows the structure of an ED chip.
【０００３】図４中、１１はｎ−ＧａＰ基板、１２はｎ
−ＧａＡｓＰ層、１３はｐ−ＧａＡｓＰ層で、全体のウ
エアの厚さｈはｈ＝２４０〜３００μｍとしてある。１
４は表側のｐ電極、１５は裏側のｎ電極である。In FIG. 4, reference numeral 11 denotes an n-GaP substrate;
The -GaAsP layer 13 is a p-GaAsP layer, and the thickness h of the entire wear is h = 240 to 300 [mu] m. 1
4 is a front side p electrode and 15 is a back side n electrode.
【０００４】ＧａＰ、ＧａＡｓＰ系のＬＥＤチップは、
製造工程での割れ損失を少なくするために、上記のよう
に２４０〜３００μｍの厚みのウエハを使用し、これに
表電極及び裏電極を形成した後、裁断を行って素子分離
するようにしている。[0004] GaP and GaAsP LED chips are
In order to reduce cracking loss in the manufacturing process, a wafer having a thickness of 240 to 300 μm is used as described above, and after forming a front electrode and a back electrode on the wafer, cutting is performed to separate elements. .
【０００５】[0005]
【発明が解決しようとする課題】ところで、上記のよう
な従来の半導体発光装置にあっては、ウエハの厚さが２
４０〜３００μｍとなっているため、樹脂モールドを施
したときの樹脂応力により素子劣化が生じ、低温時にお
いて発光光度が低下するという問題点があった。In the conventional semiconductor light emitting device as described above, the thickness of the wafer is 2 mm.
Since the thickness is 40 to 300 μm, there is a problem in that the element is deteriorated due to the resin stress when the resin mold is applied, and the luminous intensity decreases at a low temperature.
【０００６】本発明は、上記のような問題点に着目して
なされたもので、低温環境下においても発光光度が低下
することなく、信頼性の向上した半導体発光装置及びそ
の製造方法を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a semiconductor light emitting device with improved reliability without a decrease in luminous intensity even in a low temperature environment, and a method of manufacturing the same. It is intended to be.
【０００７】[0007]
【課題を解決するための手段】本発明に係る半導体発光
装置及びその製造方法は、次のように構成したものであ
る。A semiconductor light emitting device and a method of manufacturing the same according to the present invention are configured as follows.
【０００８】（１）ＧａＰ系の基板上にＧａＡｓＰ系の
半導体層を設け、厚さが略１４０〜２００μｍとなるよ
うに形成した。(1) A GaAsP-based semiconductor layer is provided on a GaP-based substrate and has a thickness of approximately 140 to 200 μm.
【０００９】（２）ＧａＰ系の基板を所定の厚さに切削
し、該基板上にＧａＡｓＰ系の半導体層を設けて、全体
の厚さを略１４０〜２００μｍに形成した後、両側の電
極を形成して素子分離のための裁断を行うようにした。(2) A GaP-based substrate is cut to a predetermined thickness, a GaAsP-based semiconductor layer is provided on the substrate, and the entire thickness is formed to approximately 140 to 200 μm. It was formed and cut for element isolation.
【００１０】[0010]
【発明の実施の形態】図１は本発明の実施例の構成を示
す斜視図であり、図４と同様ＧａＰ、ＧａＡｓＰ系のＬ
ＥＤチップの構造を示している。FIG. 1 is a perspective view showing the structure of an embodiment of the present invention. As shown in FIG.
1 shows the structure of an ED chip.
【００１１】図１において、１はｎ−ＧａＰ基板で、そ
の上にｎ−ＧａＡｓＰ層２及びｐ−ＧａＡｓＰ層３の各
半導体層が設けられており、全体のウエハの厚さ（チッ
プの高さ）ｈはｈ＝１４０〜２００μｍとしてある。４
は表側のｐ電極、５は裏側のｎ電極である。In FIG. 1, reference numeral 1 denotes an n-GaP substrate on which an n-GaAsP layer 2 and a p-GaAsP layer 3 are provided, and the thickness of the entire wafer (the height of the chip). H) h = 140-200 μm. 4
Denotes a p-electrode on the front side, and 5 denotes an n-electrode on the back side.
【００１２】本実施例においては、ウエハの厚さを上記
のように１４０〜２００μｍとしているので、樹脂モー
ルド後の樹脂応力による素子の劣化を防止でき、低温環
境下においても発光光度が低下することはない。したが
って、信頼性の向上したＬＥＤチップを得ることができ
る。In this embodiment, since the thickness of the wafer is set to 140 to 200 μm as described above, it is possible to prevent the deterioration of the device due to the resin stress after the resin molding, and to reduce the luminous intensity even in a low temperature environment. There is no. Therefore, an LED chip with improved reliability can be obtained.
【００１３】図２は本実施例におけるＧａＰランプの低
温時の通電試験結果を示したものであり、−３０℃で５
０ｍＡ、１０００ｈｒの通電を行ったときのウエハの厚
み（μｍ）と相対光度（％）の関係を示している。図示
のように、ウエハの厚みは略１４０〜２２０μｍまで良
好な光度が得られるが、特に１４０〜２００μｍの範囲
が好ましい。FIG. 2 shows the results of an electricity test at a low temperature of the GaP lamp according to the present embodiment.
The relationship between the thickness (μm) of the wafer and the relative luminous intensity (%) when a current of 0 mA is applied for 1000 hours is shown. As shown in the figure, a good luminous intensity can be obtained up to a thickness of the wafer of about 140 to 220 μm, but a range of 140 to 200 μm is particularly preferable.
【００１４】次に、本実施例の半導体発光装置の製造方
法について図３の工程図により説明する。Next, a method of manufacturing the semiconductor light emitting device of this embodiment will be described with reference to the process chart of FIG.
【００１５】まず、ｎ−ＧａＰ基板側をラッピングある
いはグラインディング等により切削し（Ｓ１）、ウエハ
の総厚みを１４０〜２００μｍとする。そして、切削し
たウエハに表側電極及び裏側電極を形成し（Ｓ２）、そ
の後裁断を行って（Ｓ３）、素子分離をする。これによ
り、上述のチップの高さが１４０〜２００μｍの信頼性
の高い素子を得ることができる。First, the n-GaP substrate side is cut by lapping or grinding (S1) to make the total thickness of the wafer 140 to 200 μm. Then, a front side electrode and a back side electrode are formed on the cut wafer (S2), and thereafter, cutting is performed (S3) to perform element isolation. As a result, a highly reliable element having a height of the chip of 140 to 200 μm can be obtained.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
低温環境下においても発光光度が低下することなく、信
頼性が向上するという効果が得られる。As described above, according to the present invention,
Even under a low-temperature environment, the effect of improving reliability without lowering the luminous intensity can be obtained.
【図１】 本発明の実施例の構成を示す斜視図FIG. 1 is a perspective view showing a configuration of an embodiment of the present invention.
【図２】 通電試験結果を示す図FIG. 2 is a diagram showing a result of an energization test.
【図３】 実施例の製造方法を示す工程図FIG. 3 is a process chart showing a manufacturing method of an embodiment.
【図４】 従来例を示す斜視図FIG. 4 is a perspective view showing a conventional example.
１ ｎ−ＧａＰ基板 ２ ｎ−ＧａＡｓＰ層 ３ ｐ−ＧａＡｓＰ層 ４ ｐ電極 ５ ｎ電極 Reference Signs List 1 n-GaP substrate 2 n-GaAsP layer 3 p-GaAsP layer 4 p electrode 5 n electrode
Claims (2)
体層を設け、厚さが略１４０〜２００μｍとなるように
形成したことを特徴とする半導体発光装置。1. A semiconductor light-emitting device comprising a GaAsP-based semiconductor layer provided on a GaP-based substrate and having a thickness of approximately 140 to 200 μm.
該基板上にＧａＡｓＰ系の半導体層を設けて、全体の厚
さを略１４０〜２００μｍに形成した後、両側の電極を
形成して素子分離のための裁断を行うようにしたことを
特徴とする半導体発光装置の製造方法。2. A GaP-based substrate is cut to a predetermined thickness.
A GaAsP-based semiconductor layer is provided on the substrate to form an overall thickness of about 140 to 200 μm, and then electrodes for both sides are formed to perform cutting for element isolation. A method for manufacturing a semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11663899A JP2000307147A (en) | 1999-04-23 | 1999-04-23 | Semiconductor light emitting device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11663899A JP2000307147A (en) | 1999-04-23 | 1999-04-23 | Semiconductor light emitting device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000307147A true JP2000307147A (en) | 2000-11-02 |
Family
ID=14692167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11663899A Withdrawn JP2000307147A (en) | 1999-04-23 | 1999-04-23 | Semiconductor light emitting device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000307147A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015535141A (en) * | 2012-09-07 | 2015-12-07 | リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Ｌｉｍｉｔｅｄ Ｌｉａｂｉｌｉｔｙ Ｃｏｍｐａｎｙｌｅｄ Ｍｉｃｒｏｓｅｎｓｏｒ Ｎｔ | GalnAsSb solid solution based heterostructure, method of manufacturing the heterostructure, and light emitting diode based on the heterostructure |
| WO2021048625A1 (en) * | 2019-09-11 | 2021-03-18 | Hong Kong Beida Jade Bird Display Limited | Multi-color led pixel unit and micro-led display panel |
-
1999
- 1999-04-23 JP JP11663899A patent/JP2000307147A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015535141A (en) * | 2012-09-07 | 2015-12-07 | リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Ｌｉｍｉｔｅｄ Ｌｉａｂｉｌｉｔｙ Ｃｏｍｐａｎｙｌｅｄ Ｍｉｃｒｏｓｅｎｓｏｒ Ｎｔ | GalnAsSb solid solution based heterostructure, method of manufacturing the heterostructure, and light emitting diode based on the heterostructure |
| WO2021048625A1 (en) * | 2019-09-11 | 2021-03-18 | Hong Kong Beida Jade Bird Display Limited | Multi-color led pixel unit and micro-led display panel |
| US11114419B2 (en) | 2019-09-11 | 2021-09-07 | Jade Bird Display (shanghai) Limited | Multi-color LED pixel unit and micro-LED display panel |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20060704 |