JP2000299149A - Connecting terminal and manufacture thereof - Google Patents
Connecting terminal and manufacture thereofInfo
- Publication number
- JP2000299149A JP2000299149A JP11105028A JP10502899A JP2000299149A JP 2000299149 A JP2000299149 A JP 2000299149A JP 11105028 A JP11105028 A JP 11105028A JP 10502899 A JP10502899 A JP 10502899A JP 2000299149 A JP2000299149 A JP 2000299149A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal film
- opening
- connection terminal
- passed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Electrical Connectors (AREA)
- Multi-Conductor Connections (AREA)
- Connector Housings Or Holding Contact Members (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品と電子部
品とを接続する接続端子及びその製造方法に関し、特
に、気密性を高めることができる接続端子及びその製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection terminal for connecting electronic components and an electronic component, and more particularly to a connection terminal capable of improving airtightness and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、液晶表示装置が搭載された電子機
器が普及している。このような電子機器では、外部接続
用コネクタが備えられており、このコネクタにより外部
の電子機器に接続される。2. Description of the Related Art In recent years, electronic devices equipped with a liquid crystal display device have become widespread. Such an electronic device is provided with an external connection connector, and is connected to an external electronic device by this connector.
【０００３】図１３（ａ）は、従来のコネクタ２０１を
示す図である。従来のコネクタ２０１は、複数のリード
線２１４が通された上側のセラミックス板２１１と下側
のセラミックス板２１１’、左右のセラミックス板２２
１とセラミックス板２２２、及び図中、前後から取り付
けられる２枚のセラミックス板（不図示）の内部に接着
剤２１５が注入されてリード線２１４が固定されてい
た。FIG. 13A shows a conventional connector 201. As shown in FIG. The conventional connector 201 includes an upper ceramic plate 211 and a lower ceramic plate 211 ′ through which a plurality of lead wires 214 are passed, and a left and right ceramic plate 22.
1, the adhesive 215 was injected into the ceramic plate 222, and two ceramic plates (not shown) attached from the front and rear in the figure, and the lead wire 214 was fixed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、コネク
タ２０１を電子機器内で使用する際、電子機器内は、気
圧が約10-10 ［Pa］程度で真空に近いため、コネクタ２
０１内部の気圧とコネクタ２０１外部（電子機器内）の
気圧差により、図１３（ｂ）に示すように、コネクタ２
０１内部の接着剤２１５がコネクタ２０１の外側方向に
移動し（分子流が発生し）、セラミックス板２１１及び
セラミックス板２１１’とリード線２１４との間にクラ
ック２３１が生じたり、接着剤２１５が外部（電子機器
内）に漏れ出したりする課題があった。However, when the connector 201 is used in an electronic device, the pressure in the electronic device is approximately 10 −10 [Pa] and is close to a vacuum, so that the connector 2 is not used.
Due to the pressure difference between the inside of the connector 201 and the outside of the connector 201 (inside the electronic device), as shown in FIG.
01, the adhesive 215 inside the connector 201 moves to the outside of the connector 201 (molecular flow is generated), a crack 231 is generated between the ceramic plate 211 and the ceramic plate 211 ′ and the lead wire 214, or the adhesive 215 is (In the electronic device).
【０００５】特に、温度が上昇し、約３５０℃くらいに
なると、さらに、コネクタ２０１内部の気圧とコネクタ
２０１外部の気圧の差が大きくなるため、接着剤２１５
のコネクタ２０１外部への漏れ出し、及びセラミックス
板２１１, セラミックス板２１２におけるクラック２３
１の発生がさらに大きくなり、またコネクタ２０１内部
からガスが発生する課題があった。In particular, when the temperature rises to about 350 ° C., the difference between the air pressure inside the connector 201 and the air pressure outside the connector 201 further increases, so that the adhesive 215
Leaks out of the connector 201 and cracks 23 in the ceramics plate 211 and the ceramics plate 212.
1 is further increased, and gas is generated from inside the connector 201.
【０００６】このため、電子機器内部において上述した
真空度が保てないため、装置不良の原因となっていた。
また、真空炉に装着され、真空炉内部の電子部品と真空
炉外部の電子機器とを接続するための接続端子において
も、真空炉内は超高真空（〜10-12 [Pa]程度）であるた
め、上述した課題と同様の課題が発生すると考えられ
る。For this reason, the above-mentioned degree of vacuum cannot be maintained inside the electronic device, which causes a device failure.
Also, the connection terminals for mounting the electronic components inside the vacuum furnace and the electronic equipment outside the vacuum furnace are installed in the vacuum furnace, and the inside of the vacuum furnace is also under ultra-high vacuum (about 10 -12 [Pa]). Therefore, it is considered that the same problem as the above-described problem occurs.
【０００７】本発明は、上記した課題に鑑みてなされた
ものであり、気密性を高めることができると共にガスの
発生のない接続端子及びその製造方法を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a connection terminal capable of improving airtightness and generating no gas, and a method of manufacturing the connection terminal.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に、請求項１に記載の接続端子は、電子部品と電子部品
とを接続する接続端子であって、接続線が通されている
基板の開口部に、接続線と基板の原子間距離及び熱膨張
係数に近い第１の金属膜が形成され、接続線が通された
基板の開口部近傍に第１の金属膜と同一の第２の金属膜
が形成されていることを特徴とする。According to a first aspect of the present invention, there is provided a connection terminal for connecting an electronic component to an electronic component, wherein the connection terminal is a substrate through which the connection line is passed. A first metal film close to the interatomic distance between the connection line and the substrate and the thermal expansion coefficient is formed in the opening, and the same second metal film as the first metal film near the opening in the substrate through which the connection line is passed. Wherein the metal film is formed.
【０００９】即ち、請求項１に記載の接続端子は、接続
線が通されている基板の開口部に、接続線及び基板の原
子間距離及び熱膨張係数に近い第１の金属膜が形成さ
れ、接続線と基板が、開口部に形成された第１の金属膜
により強固に密着されている。さらに、接続線が通され
た開口部近傍に第１の金属膜と同一の第２の金属膜が形
成されており、接続線と基板が、第１の金属膜及び第２
の金属膜により強固に密着されている。また、請求項１
に記載の接続端子では、温度が上昇した場合、接続線、
基板、第１の金属膜、及び第２の金属膜は、それぞれの
原子間距離及び熱膨張係数が近いため、強固に密着され
つつ、ほぼ同様に膨張する。That is, in the connection terminal according to the first aspect, a first metal film close to the interatomic distance between the connection line and the substrate and the thermal expansion coefficient is formed in the opening of the substrate through which the connection line is passed. The connection line and the substrate are firmly adhered to the first metal film formed in the opening. Further, the same second metal film as the first metal film is formed near the opening through which the connection line is passed, and the connection line and the substrate are connected to the first metal film and the second metal film.
Tightly adhered to the metal film. Claim 1
If the temperature rises, the connection terminals described in
Since the substrate, the first metal film, and the second metal film are close to each other in the interatomic distance and the thermal expansion coefficient, they expand substantially similarly while firmly adhered.
【００１０】また、上記課題を解決するために、請求項
２に記載の接続端子は、請求項１に記載の接続端子にお
いて、接続線は、基板と同一の第１の基板及び第２の基
板の開口部に通されていて、第１の基板、第２の基板、
及び４枚の板により箱体が形成され、内部に接着剤が封
入されていることを特徴とする。According to another aspect of the present invention, there is provided a connection terminal according to the first aspect, wherein the connection lines are the same as the first and second substrates. , The first substrate, the second substrate,
A box is formed by the four plates, and an adhesive is sealed inside.
【００１１】即ち、請求項２に記載の接続端子は、請求
項１に記載の接続端子において、接続線は、基板と同一
の第１の基板及び第２の基板の開口部に通されていて、
接続線と第１の基板又は第２の基板は、第１の金属膜及
び第２の金属膜により強固に密着されて、第１の基板、
第２の基板、及び４枚の基板により内部に接着剤が封入
されている。また、請求項２に記載の接続端子では、温
度が上昇した場合、内部に封入されている接着剤は膨張
するが、接続線、第１の基板、第２の基板、第１の金属
膜、及び第２の金属膜は、それぞれの原子間距離及び熱
膨張係数が近いため、強固に密着されつつ、ほぼ同様に
膨張する。That is, a connection terminal according to a second aspect is the connection terminal according to the first aspect, wherein the connection line is passed through the opening of the first substrate and the second substrate which are the same as the substrate. ,
The connection line and the first substrate or the second substrate are firmly adhered to the first metal film and the second metal film, and the first substrate,
An adhesive is enclosed inside the second substrate and the four substrates. In the connection terminal according to the second aspect, when the temperature rises, the adhesive encapsulated therein expands, but the connection line, the first substrate, the second substrate, the first metal film, The second metal film and the second metal film expand in substantially the same manner while being firmly adhered to each other because the respective interatomic distances and thermal expansion coefficients are close to each other.
【００１２】また、上記課題を解決するために、請求項
３に記載の接続端子は、請求項１に記載の接続端子にお
いて、接続線は、基板と同一の第１の基板及び第２の基
板の開口部に通されていて、第１の基板と第２の基板と
の間に第３の基板が挿入され、接続線が通された第３の
基板の開口部に、第１の金属膜が形成されていることを
特徴とする。According to a third aspect of the present invention, there is provided a connection terminal according to the first aspect, wherein the connection lines are the same as the first and second substrates. The first metal film is inserted into the opening of the third substrate through which the third substrate is inserted between the first substrate and the second substrate, and the connection line is passed therethrough. Is formed.
【００１３】即ち、請求項３に記載の接続端子は、請求
項１に記載の接続端子において、接続線は、基板と同一
の第１の基板及び第２の基板の開口部に通されていて、
接続線と第１の基板及び第２の基板は、開口部に形成さ
れた第１の金属膜により強固に密着され、内部に封入さ
れた第３の基板の開口部にも第１の金属膜が形成されて
接続線が通されており、接続線と第３の基板は、開口部
に形成された第１の金属膜により強固に密着されてい
る。また、請求項３に記載の接続端子では、温度が上昇
した場合、第１の基板、第２の基板、第３の基板、第１
の金属膜、及び第２の金属膜は、それぞれの原子間距離
及び熱膨張係数が近いため、強固に密着されつつ、ほぼ
同様に膨張する。That is, a connection terminal according to a third aspect of the present invention is the connection terminal according to the first aspect, wherein the connection line is passed through openings of the first substrate and the second substrate which are the same as the substrate. ,
The connection lines, the first substrate and the second substrate are firmly adhered to each other by the first metal film formed in the opening, and the first metal film is also provided in the opening of the third substrate sealed therein. Are formed and the connection lines are passed therethrough, and the connection lines and the third substrate are firmly adhered to each other by the first metal film formed in the opening. In the connection terminal according to the third aspect, when the temperature rises, the first substrate, the second substrate, the third substrate, the first substrate,
Since the metal film and the second metal film are close to each other in atomic distance and thermal expansion coefficient, they expand almost in the same manner while firmly adhered to each other.
【００１４】また、上記課題を解決するために、請求項
４に記載の接続端子の製造方法は、電子部品と電子部品
とを接続する接続端子の製造方法であって、接続線を通
す基板の開口部に、接続線と基板の原子間距離及び熱膨
張係数に近い第１の金属膜を形成した後に、第１の金属
膜が形成された基板の開口部に接続線を通し、接続線が
通された基板の開口部近傍に第１の金属膜と同一の第２
の金属膜を形成することを特徴とする。According to a fourth aspect of the present invention, there is provided a method of manufacturing a connection terminal for connecting an electronic component to an electronic component, the method comprising the steps of: After forming a first metal film close to the interatomic distance between the connection line and the substrate and the coefficient of thermal expansion in the opening, the connection line is passed through the opening of the substrate on which the first metal film is formed, and the connection line is formed. The same second metal film as the first metal film is formed near the opening of the passed substrate.
Is characterized in that a metal film is formed.
【００１５】即ち、請求項４に記載の接続端子の製造方
法は、接続線を通す基板の開口部に、接続線と基板の原
子間距離及び熱膨張係数に近い第１の金属膜を形成した
後に、第１の金属膜が形成された基板の開口部に接続線
を通し、接続線、基板、及び第１の金属膜を強固に密着
させる。そして、接続線が通された基板の開口部近傍に
第１の金属膜と同一の第２の金属膜を形成し、接続線、
基板、第１の金属膜、及び第２の金属膜を強固に密着さ
せる。また、請求項４に記載の接続端子の製造方法によ
り製造された接続端子は、温度が上昇しても、接続線、
基板、第１の金属膜、及び第２の金属膜は、原子間距離
及び熱膨張係数が近いため、強固に密着されつつ、ほぼ
同様に膨張する。That is, in the method of manufacturing a connection terminal according to the present invention, the first metal film close to the distance between the connection line and the substrate and the thermal expansion coefficient is formed in the opening of the substrate through which the connection line passes. Subsequently, a connection line is passed through the opening of the substrate on which the first metal film is formed, and the connection line, the substrate, and the first metal film are firmly adhered to each other. Then, a second metal film identical to the first metal film is formed in the vicinity of the opening of the substrate through which the connection line has been passed, and the connection line,
The substrate, the first metal film, and the second metal film are firmly adhered. In addition, the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 4 has a connection wire,
Since the substrate, the first metal film, and the second metal film have a small interatomic distance and a small thermal expansion coefficient, they expand almost similarly while firmly adhered.
【００１６】また、上記課題を解決するために、請求項
５に記載の接続端子の製造方法は、請求項４に記載の接
続端子の製造方法において、接続線を基板の開口部に通
す際、基板上に後に除去可能な除去膜を形成し、除去膜
が基板よりも内側に残留されるように開口部を形成し、
開口部及び除去膜上に第１の金属膜を形成し、除去膜を
除去して開口部に接続線を通すことを特徴とする。According to a fifth aspect of the present invention, there is provided a method for manufacturing a connection terminal according to the fourth aspect, wherein the connecting line is passed through an opening of the substrate. Forming a removal film that can be removed later on the substrate, forming an opening such that the removal film remains inside the substrate,
A first metal film is formed over the opening and the removal film, the removal film is removed, and a connection line is passed through the opening.
【００１７】即ち、請求項５に記載の接続端子の製造方
法は、請求項４に記載の接続端子の製造方法において、
接続線を基板の開口部に通す際、基板上に後に除去可能
な除去膜を形成した後、除去膜が基板よりも内側に残留
されるように開口部を形成する。そして、開口部及び除
去膜上に第１の金属膜を形成し、除去膜を除去して、開
口部近傍に第１の金属膜を残留させる。開口部近傍に残
留された第１の金属膜は、他の開口部近傍に残留された
第１の金属膜と隔離される。そして、接続線が通された
開口部近傍に第２の金属膜が形成され、形成された第２
の金属膜により、既に形成されている第１の金属膜及び
接続線の開口部近傍を密着させる。That is, according to a fifth aspect of the present invention, there is provided a method of manufacturing a connection terminal, comprising the steps of:
When the connection line is passed through the opening of the substrate, a removal film that can be removed later is formed on the substrate, and then the opening is formed such that the removal film remains inside the substrate. Then, a first metal film is formed over the opening and the removal film, the removal film is removed, and the first metal film is left near the opening. The first metal film remaining near the opening is isolated from the first metal film remaining near the other opening. Then, a second metal film is formed near the opening through which the connection line is passed, and the formed second metal film is formed.
The first metal film already formed and the vicinity of the opening of the connection line are brought into close contact with each other.
【００１８】また、上記課題を解決するために、請求項
６に記載の接続端子の製造方法は、請求項５に記載の接
続端子の製造方法において、第１の金属膜が形成された
基板の開口部に接続線を通す際、基板と同一の工程によ
り形成された第１の基板及び第２の基板の開口部に接続
線を通した後に、第１の基板及び第２の基板並びに４枚
の板により形成される箱体の内部に接着剤を封入し、接
続線が通された第１の基板及び第２の基板の開口部近傍
に第２の金属膜を形成する。According to a sixth aspect of the present invention, there is provided a method of manufacturing a connection terminal according to the fifth aspect, wherein the first metal film is formed on the substrate. When the connection lines are passed through the openings, the connection lines are passed through the openings of the first substrate and the second substrate formed in the same process as the substrate, and then the first substrate, the second substrate, and the four substrates are formed. An adhesive is sealed inside a box formed by the above-mentioned plates, and a second metal film is formed in the vicinity of the openings of the first and second substrates through which the connection lines have been passed.
【００１９】即ち、請求項６に記載の接続端子の製造方
法は、請求項５に記載の接続端子の製造方法において、
第１の金属膜が形成された基板の開口部に接続線を通す
際、基板と同一の工程により形成された第１の基板及び
第２の基板の開口部に接続線を通し、接続線、第１の基
板、第２の基板、及び第１の金属膜を強固に密着させ
る。そして、第１の基板、第２の基板、及び４枚の板に
より形成される箱体の内部に接着剤を封入する。その
後、接続線が通された第１の基板及び第２の基板の開口
部近傍に第２の金属膜を形成し、接続線、第１の基板、
第２の基板、第１の金属膜、及び第２の金属膜を強固に
密着させる。また、請求項６に記載の接続端子の製造方
法により製造された接続端子では、温度が上昇した場
合、接続線、第１の基板、第２の基板、第１の金属膜、
及び第２の金属膜は、強固に密着されつつ、ほぼ同様に
膨張する。That is, the method for manufacturing a connection terminal according to claim 6 is the same as the method for manufacturing a connection terminal according to claim 5,
When the connection line is passed through the opening of the substrate on which the first metal film is formed, the connection line is passed through the opening of the first substrate and the second substrate formed by the same process as the substrate, The first substrate, the second substrate, and the first metal film are firmly adhered to each other. Then, an adhesive is sealed inside a box formed by the first substrate, the second substrate, and the four plates. Thereafter, a second metal film is formed near the openings of the first substrate and the second substrate through which the connection lines are passed, and the connection lines, the first substrate,
The second substrate, the first metal film, and the second metal film are firmly adhered. In the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 6, when the temperature rises, the connection line, the first substrate, the second substrate, the first metal film,
The second metal film expands in substantially the same manner while being tightly adhered.
【００２０】また、上記課題を解決するために、請求項
７に記載の接続端子の製造方法は、請求項５に記載の接
続端子の製造方法において、第１の金属膜が形成された
基板の開口部に接続線を通す際、基板と同一の工程によ
り形成された第１の基板及び第２の基板とは異なる第３
の基板上に後に除去可能な除去膜を形成し、第３の基板
及び除去膜に同様な形状に開口部を形成し、開口部及び
除去膜上に第１の金属膜を形成し、除去膜を除去し、そ
の後、第１の基板及び第２の基板の間に第３の基板を挟
んで、第１の基板、第２の基板、及び第３の基板の開口
部に接続線を通すことを特徴とする。According to a seventh aspect of the present invention, there is provided a method of manufacturing a connection terminal according to the fifth aspect, wherein the first metal film is formed on the substrate having the first metal film formed thereon. When the connection line is passed through the opening, a third substrate different from the first substrate and the second substrate formed by the same process as the substrate is used.
Forming a removal film that can be removed later on the substrate, forming an opening in the third substrate and the removal film in a similar shape, forming a first metal film on the opening and the removal film, And then passing connection lines through openings of the first substrate, the second substrate, and the third substrate with the third substrate interposed between the first substrate and the second substrate It is characterized by.
【００２１】即ち、請求項７に記載の接続端子の製造方
法は、請求項５に記載の接続端子の製造方法において、
第１の金属膜が形成された基板の開口部に接続線を通す
際、第１の基板及び第２の基板とは異なる第３の基板上
に後に除去可能な膜を形成する。そして、第３の基板及
び除去膜に同様な形状に開口部を形成し、開口部及び除
去膜上に第１の金属膜を形成し、除去膜を除去し、第３
の基板の開口部内側に第１の金属膜を残留させ、接続
線、第３の基板、及び第１の金属膜を強固に密着させ
る。その後、第３の基板を第１の基板と第２の基板の間
に挟んで、第１の基板、第２の基板、及び第３の基板の
開口部に接続線を通し、第１の基板、第２の基板、第３
の基板、及び第１の金属膜が強固に密着される。さら
に、接続線が通されている第１の基板及び第２の基板の
開口部に、第２の金属膜を形成し、接続線、第１の基
板、第２の基板、第１の金属膜、及び第２の金属膜が強
固に密着される。また、請求項７に記載の接続端子の製
造方法により製造された接続端子では、温度が上昇した
場合、接続線、第１の基板、第２の基板、第３の基板、
第１の金属膜、及び第２の金属膜は、強固に密着されつ
つ、ほぼ同様に膨張する。That is, the method for manufacturing a connection terminal according to claim 7 is the same as the method for manufacturing a connection terminal according to claim 5,
When a connection line is passed through the opening of the substrate on which the first metal film is formed, a film that can be removed later is formed on a third substrate different from the first substrate and the second substrate. Then, an opening is formed in the third substrate and the removal film in a similar shape, a first metal film is formed on the opening and the removal film, and the removal film is removed.
The first metal film is left inside the opening of the substrate, and the connection lines, the third substrate, and the first metal film are firmly adhered to each other. After that, the third substrate is sandwiched between the first substrate and the second substrate, and connection lines are passed through the openings of the first substrate, the second substrate, and the third substrate. , The second substrate, the third
The substrate and the first metal film are firmly adhered to each other. Further, a second metal film is formed in the openings of the first substrate and the second substrate through which the connection lines are passed, and the connection lines, the first substrate, the second substrate, and the first metal film are formed. , And the second metal film are firmly adhered. In the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 7, when the temperature rises, the connection line, the first substrate, the second substrate, the third substrate,
The first metal film and the second metal film expand almost similarly while firmly adhered.
【００２２】また、上記課題を解決するために、請求項
８に記載の接続端子の製造方法は、請求項５乃至請求項
７に記載の接続端子の製造方法において、開口部及び後
に除去可能な除去膜上に第１の金属膜を形成する際、開
口部及び除去膜上に第１の金属膜を蒸着させ、蒸着させ
た第１の金属膜をイオンビームでスパッタすることを特
徴とする。According to another aspect of the present invention, there is provided a method of manufacturing a connection terminal, comprising the steps of: When forming the first metal film on the removal film, the first metal film is deposited on the opening and the removal film, and the deposited first metal film is sputtered with an ion beam.
【００２３】即ち、請求項８に記載の接続端子の製造方
法は、請求項５に記載の接続端子の製造方法において、
開口部及び除去膜上に第１の金属膜を形成する際、開口
部及び除去膜上に第１の金属膜を蒸着させ、蒸着させた
第１の金属膜をイオンビームでスパッタし、開口部及び
除去膜上に第１の金属膜を強固に密着させる。そして、
除去膜を除去し、基板の開口部近傍にのみ強固に密着さ
れた第１の金属膜を残留させる。That is, the method for manufacturing a connection terminal according to claim 8 is the same as the method for manufacturing a connection terminal according to claim 5,
When forming a first metal film on the opening and the removal film, a first metal film is deposited on the opening and the removal film, and the deposited first metal film is sputtered with an ion beam. Then, the first metal film is firmly adhered to the removal film. And
The removal film is removed, and the first metal film firmly adhered only in the vicinity of the opening of the substrate remains.
【００２４】また、請求項８に記載の接続端子の製造方
法は、請求項６に記載の接続端子の製造方法において、
除去膜が第１の基板及び第２の基板よりも内側に残留さ
れるように形成された開口部及び除去膜上に第１の金属
膜を蒸着させ、蒸着させた第１の金属膜をイオンビーム
でスパッタし、開口部及び除去膜上に第１の金属膜を強
固に密着させる。そして、除去膜を除去し、第１の基板
及び第２の基板の開口部近傍にのみ強固に密着された第
１の金属膜を残留させる。その後、第１の基板及び第２
の基板の開口部に接続線が通され、接続線、第１の基
板、第２の基板、及び第１の金属膜が強固に密着され
る。The method for manufacturing a connection terminal according to claim 8 is the same as the method for manufacturing a connection terminal according to claim 6,
Depositing a first metal film on the opening and the removal film formed so that the removal film remains inside the first substrate and the second substrate, and ion-depositing the deposited first metal film by ion The first metal film is firmly adhered to the opening and the removal film by sputtering with a beam. Then, the removal film is removed, and the first metal film firmly adhered only in the vicinity of the openings of the first substrate and the second substrate remains. Then, the first substrate and the second
The connection line is passed through the opening of the substrate, and the connection line, the first substrate, the second substrate, and the first metal film are firmly adhered to each other.
【００２５】また、請求項８に記載の接続端子の製造方
法は、請求項７に記載の接続端子の製造方法において、
第３の基板及び除去膜に同様な形状に形成された開口部
及び除去膜上に第１の金属膜を蒸着させ、蒸着させた第
１の金属膜をイオンビームでスパッタし、開口部及び除
去膜上に第１の金属膜を強固に密着させる。そして、除
去膜を除去し、第３の基板の開口部内側にのみ強固に密
着された第１の金属膜を残留させる。その後、開口部内
側に第１の金属膜が形成された第３の基板が、第１の基
板及び第２の基板に挟まれ、第１の基板及び第２の基板
並びに第３の基板の開口部に接続線が通され、接続線、
第１の基板、第２の基板、第３の基板、及び第１の金属
膜が強固に密着される。According to a eighth aspect of the present invention, there is provided a method of manufacturing a connection terminal according to the seventh aspect.
A first metal film is deposited on the opening and the removal film formed in the same shape on the third substrate and the removal film, and the deposited first metal film is sputtered with an ion beam to remove the opening and the removal. The first metal film is firmly adhered to the film. Then, the removal film is removed to leave the first metal film firmly adhered only inside the opening of the third substrate. Thereafter, the third substrate having the first metal film formed inside the opening is sandwiched between the first substrate and the second substrate, and the openings of the first substrate, the second substrate, and the third substrate are formed. The connection line is passed through the section,
The first substrate, the second substrate, the third substrate, and the first metal film are firmly adhered.
【００２６】また、上記課題を解決するために、請求項
９に記載の接続端子は、電子部品と電子部品とを接続す
る接続端子であって、接続線が通されている基板の開口
部に、接続線と基板の原子間距離及び熱膨張係数に近い
第１の金属膜が形成され、接続線が通された基板の開口
部近傍に第１の金属膜と同一の第２の金属膜が形成され
ている接続端子の外部がエポキシ系樹脂で覆われ、接続
端子の外部にフランジが装着されていることを特徴とす
る。According to another aspect of the present invention, there is provided a connecting terminal for connecting an electronic component to an electronic component, wherein the connecting terminal is provided in an opening of a substrate through which the connecting wire is passed. A first metal film close to the interatomic distance and thermal expansion coefficient between the connection line and the substrate is formed, and a second metal film identical to the first metal film is formed near the opening of the substrate through which the connection line is passed. The outside of the formed connection terminal is covered with an epoxy resin, and a flange is attached to the outside of the connection terminal.
【００２７】即ち、請求項９に記載の接続端子は、外部
がエポキシ系樹脂で覆われ、さらに、その外部にフラン
ジが装着されている接続端子の接続線が通されている基
板の開口部に、接続線及び基板の原子間距離及び熱膨張
係数に近い第１の金属膜が形成され、接続線と基板が、
開口部に形成された第１の金属膜により強固に密着され
ている。さらに、接続線が通された開口部近傍に第１の
金属膜と同一の第２の金属膜が形成されており、接続線
と基板が、第１の金属膜及び第２の金属膜により強固に
密着されている。また、請求項９に記載の接続端子で
は、温度が上昇した場合、接続線、基板、第１の金属
膜、及び第２の金属膜は、それぞれの原子間距離及び熱
膨張係数が近いため、強固に密着されつつ、ほぼ同様に
膨張する。従って、請求項９に記載の接続端子では、超
高真空中においても、接続線、基板、第１の金属膜、及
び第２の金属膜は、強固に密着される。That is, in the connection terminal according to the ninth aspect, the outside is covered with an epoxy resin, and the connection terminal of the connection terminal having the flange mounted on the outside is connected to the opening of the board. A first metal film close to the interatomic distance and thermal expansion coefficient between the connection line and the substrate is formed;
The first metal film formed in the opening is firmly adhered. Further, the same second metal film as the first metal film is formed near the opening through which the connection line is passed, so that the connection line and the substrate are more firmly connected to the first metal film and the second metal film. Is adhered to. In the connection terminal according to the ninth aspect, when the temperature rises, the connection line, the substrate, the first metal film, and the second metal film have close interatomic distances and close thermal expansion coefficients. It expands in almost the same manner while being firmly adhered. Therefore, in the connection terminal according to the ninth aspect, the connection wire, the substrate, the first metal film, and the second metal film are firmly adhered even in an ultra-high vacuum.
【００２８】また、上記課題を解決するために、請求項
１０に記載の接続端子の製造方法は、電子部品と電子部
品とを接続する接続端子の製造方法であって、接続線を
通す基板の開口部に、接続線と基板の原子間距離及び熱
膨張係数に近い第１の金属膜を形成した後に、第１の金
属膜が形成された基板の開口部に接続線を通し、接続線
が通された基板の開口部近傍に第１の金属膜と同一の第
２の金属膜を形成して製造された端子の外部をエポキシ
系樹脂で覆い、さらに、接続端子の外部にフランジを装
着することを特徴とする。According to a tenth aspect of the present invention, there is provided a method of manufacturing a connection terminal for connecting an electronic component to an electronic component, the method comprising the steps of: After forming a first metal film close to the interatomic distance between the connection line and the substrate and the coefficient of thermal expansion in the opening, the connection line is passed through the opening of the substrate on which the first metal film is formed, and the connection line is formed. A second metal film identical to the first metal film is formed in the vicinity of the opening of the substrate through which the terminal has been formed, the outside of the terminal is covered with an epoxy resin, and a flange is mounted outside the connection terminal. It is characterized by the following.
【００２９】即ち、請求項１０に記載の接続端子の製造
方法は、接続線を通す基板の開口部に、接続線と基板の
原子間距離及び熱膨張係数に近い第１の金属膜を形成し
た後に、第１の金属膜が形成された基板の開口部に接続
線を通し、接続線、基板、及び第１の金属膜を強固に密
着させる。そして、接続線が通された基板の開口部近傍
に第１の金属膜と同一の第２の金属膜を形成し、接続
線、基板、第１の金属膜、及び第２の金属膜を強固に密
着させる。このようにして製造された接続端子の外部を
エポキシ系樹脂で覆い、さらに、その外部にフランジを
装着する。製造された接続端子は、温度が上昇しても、
接続線、基板、第１の金属膜、及び第２の金属膜は、原
子間距離及び熱膨張係数が近いため、強固に密着されつ
つ、ほぼ同様に膨張する。従って、請求項１０に記載の
接続端子の製造方法により製造された接続端子では、超
高真空中においても、接続線、基板、第１の金属膜、及
び第２の金属膜は、強固に密着される。That is, in the method of manufacturing a connection terminal according to the tenth aspect, the first metal film close to the distance between the connection line and the substrate and the coefficient of thermal expansion is formed in the opening of the substrate through which the connection line passes. Subsequently, a connection line is passed through the opening of the substrate on which the first metal film is formed, and the connection line, the substrate, and the first metal film are firmly adhered to each other. Then, a second metal film identical to the first metal film is formed in the vicinity of the opening of the substrate through which the connection line has passed, and the connection line, the substrate, the first metal film, and the second metal film are firmly bonded. In close contact. The outside of the connection terminal thus manufactured is covered with an epoxy resin, and a flange is attached to the outside. Even if the temperature of the manufactured connection terminals rises,
Since the connection line, the substrate, the first metal film, and the second metal film have a small interatomic distance and a small thermal expansion coefficient, they expand almost in the same manner while being firmly adhered. Therefore, in the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 10, the connection wire, the substrate, the first metal film, and the second metal film are firmly adhered even in an ultra-high vacuum. Is done.
【００３０】[0030]
【発明の実施の形態】以下、本発明の実施の形態のコネ
クタの構造について、添付の図面を用いて説明する。図
１は本実施の形態のコネクタの構造を示す斜視図であ
り、図２は図１のＡ−Ａ’線での断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a connector according to an embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a perspective view showing the structure of the connector of the present embodiment, and FIG. 2 is a cross-sectional view taken along line AA ′ of FIG.
【００３１】本実施の形態の接続端子であるコネクタ１
は、図１では省略しているが、セラミックス板１１及び
セラミックス板１１’に約８０本程度のリード線１４が
通されている。このリード線１４は、タングステンから
形成されている。そして、セラミックス板２１、セラミ
ックス板２２、セラミックス板２３、及びセラミックス
板２４により箱体が形成され、内部に接着剤１５が封入
されて、リード線１４が固定されている。リード線１４
が通されているセラミックス板１１及びセラミックス板
１１’の近傍には、それぞれ銅膜１３ａ及び銅膜１３’
ａが形成され、さらに銅メッキ１６が形成されている。Connector 1 as connection terminal of the present embodiment
Although not shown in FIG. 1, about 80 lead wires 14 are passed through the ceramic plate 11 and the ceramic plate 11 '. This lead wire 14 is formed from tungsten. Then, a box is formed by the ceramics plate 21, the ceramics plate 22, the ceramics plate 23, and the ceramics plate 24, the adhesive 15 is sealed therein, and the lead wire 14 is fixed. Lead wire 14
Near the ceramic plate 11 and the ceramic plate 11 'through which the copper film 13a and the copper film 13' are respectively passed.
a, and a copper plating 16 is further formed.
【００３２】その詳細な断面構造は、図２に示されてお
り、セラッミクス板１１の開口部３３及びセラミックス
板１１’の開口部３３’と、開口部３３及び開口部３
３’に通されたリード線１４との間が、それぞれ銅膜１
３ａ及び銅膜１３’ａにより挟まれた構造となってお
り、セラミックス板１１及びセラミックス板１１’の外
側で、開口部３３及び開口部３３’のリード線１４の近
傍の銅膜１３ａ及び銅膜１３’ａの上部には、銅メッキ
１６が形成され、リード線１４が通されたセラミックス
板１１，１１’の開口部３３，３３’の近傍が銅膜１
３，１３’ａ、及び銅メッキ１６により覆われた構造と
なっている。以下、セラミックス板１１，１１’のこと
をセラミックス基板１１，１１’とも称する。The detailed cross-sectional structure is shown in FIG. 2, and the opening 33 of the ceramics plate 11 and the opening 33 'of the ceramics plate 11', and the opening 33 and the opening 3
The space between the copper film 1 and the lead wire 14 passed through 3 ′ is
3a and the copper film 13'a, and the copper film 13a and the copper film outside the ceramic plate 11 and the ceramic plate 11 'near the lead 33 of the opening 33 and the opening 33'. Copper plating 16 is formed on the upper portion of 13 ′ a, and the copper film 1 is formed near the openings 33 and 33 ′ of the ceramic plates 11 and 11 ′ through which the lead wires 14 are passed.
3, 13'a and a structure covered with copper plating 16. Hereinafter, the ceramic plates 11, 11 'are also referred to as ceramic substrates 11, 11'.
【００３３】次に、本実施の形態のコネクタ１の製造方
法について、図３及び図４を用いて説明する。まず、図
３（ａ）に示すように、セラミックス基板１１上にペン
キ層１２が塗布される。Next, a method of manufacturing the connector 1 of the present embodiment will be described with reference to FIGS. First, as shown in FIG. 3A, a paint layer 12 is applied on a ceramic substrate 11.
【００３４】次に、図３（ｂ）に示すように、ペンキ層
１２上から矢印に示すようにエキシマレーザが照射さ
れ、ペンキ層１２及びセラミックス基板１１に開口部３
１が形成される。形成された開口部３１の形状は、ペン
キ層１２が、セラミックス基板１１よりも内側に小さく
形成され、ペンキ層１２とセラミックス基板１１とで階
段状の形状になるようにする。Next, as shown in FIG. 3B, an excimer laser is irradiated from above the paint layer 12 as indicated by an arrow, and the paint layer 12 and the ceramic substrate 11 are opened.
1 is formed. The shape of the formed opening 31 is such that the paint layer 12 is formed smaller inside the ceramic substrate 11 and has a step-like shape between the paint layer 12 and the ceramic substrate 11.
【００３５】そして、図３（ｃ）に示すように、銅膜１
３をイオンビーム支援型真空蒸着IBAD(Ion Beam Assist
ed Deposition)法により、開口部３１の形状に沿って膜
厚が均一になるように蒸着させる。IBAD法とは、銅分子
をセラミックス基板１１及びペンキ層１２に蒸着させた
後に、イオンビームでスパッタして、セラミックス基板
１１及びペンキ層１２に、銅分子をめり込ませて密着さ
せる蒸着法である。Then, as shown in FIG.
3 for ion beam assisted vacuum deposition IBAD (Ion Beam Assist
Evaporation is performed by an ed Deposition method so that the film thickness becomes uniform along the shape of the opening 31. The IBAD method is an evaporation method in which copper molecules are vapor-deposited on the ceramic substrate 11 and the paint layer 12 and then sputtered with an ion beam to immerse the copper molecules in the ceramic substrate 11 and the paint layer 12 and adhere thereto. is there.
【００３６】その詳細は、図５に示すように、真空炉６
０の下方に設置された、銅溶液を蓄えたるつぼ６１がヒ
ータ６２により加熱されて銅分子が蒸発され、蒸発され
た銅分子が、真空炉６０の上方に設置されている、セラ
ミックス基板１１及びペンキ層１２に蒸着される。そし
て、ビームガン６３によりイオンビームが発射され、発
射されたイオンビームが加速電極６４により加速され
て、セラミックス基板１１及びペンキ層１２に蒸着され
ている銅分子がスパッタされ、銅分子がセラミックス基
板１１及びペンキ層１２にめり込まされて密着される。
そのため、蒸着された銅膜１３は、セラミックス基板１
１及びペンキ層１２に強固に密着されて形成される。The details are as shown in FIG.
0, a crucible 61 storing a copper solution is heated by a heater 62 to evaporate copper molecules, and the evaporated copper molecules are placed above a vacuum furnace 60. Deposited on paint layer 12. Then, an ion beam is emitted by the beam gun 63, the emitted ion beam is accelerated by the acceleration electrode 64, and copper molecules deposited on the ceramic substrate 11 and the paint layer 12 are sputtered, and the copper molecules are The paint layer 12 is immersed in and adheres to the paint layer 12.
Therefore, the deposited copper film 13 is deposited on the ceramic substrate 1.
1 and the paint layer 12.
【００３７】次いで、図３（ｄ）に示すように、ペンキ
層１２がシンナーなどの溶剤により溶解される。このと
き、ペンキ層１２の上部に形成されている銅膜１３は、
IBAD法により蒸着されており、ペンキ層１２に強固に形
成されているため、ペンキ層１２が溶解されるときに同
時に剥離され、開口部３３の内側及びセラミックス基板
１１の開口部３３近傍にのみ銅膜１３ａが残留される。
このとき、絶縁性を保つため、セラミックス基板１１の
開口部３３の近傍だけに銅膜１３ａが形成された状態と
なるようにし、他の開口部３３の近傍に蒸着させられた
銅膜１３ａと隔離されていることを確認する。この状態
のセラミックス基板１１及び銅膜１３ａを合わせたもの
を、便宜上、第１の中間部材４０と称することにする。Next, as shown in FIG. 3D, the paint layer 12 is dissolved by a solvent such as thinner. At this time, the copper film 13 formed on the paint layer 12 is
Since it is deposited by the IBAD method and is firmly formed on the paint layer 12, it is peeled off at the same time as the paint layer 12 is melted, and copper is provided only inside the opening 33 and near the opening 33 of the ceramic substrate 11. The film 13a remains.
At this time, in order to maintain insulation, the copper film 13a is formed only in the vicinity of the opening 33 of the ceramic substrate 11 so as to be isolated from the copper film 13a deposited in the vicinity of the other opening 33. Make sure that The combination of the ceramic substrate 11 and the copper film 13a in this state will be referred to as a first intermediate member 40 for convenience.
【００３８】そして、図４（ａ）に示すように、第１の
中間部材４０の開口部３３と、この第１の中間部材４０
と同様の方法で形成された他の第１の中間部材４０’の
開口部３３’にリード線１４が通される。なお、他の第
１の中間部材４０’の開口部３１’と開口部３２’の形
成過程は省略されているが、第１の中間部材４０の場合
と同様である。As shown in FIG. 4A, the opening 33 of the first intermediate member 40 and the first intermediate member 40
The lead wire 14 is passed through the opening 33 'of the other first intermediate member 40' formed in the same manner as described above. The process of forming the openings 31 ′ and 32 ′ of the other first intermediate member 40 ′ is omitted, but is similar to that of the first intermediate member 40.
【００３９】次いで、図４（ｂ）に示すように、セラミ
ックス板２１がセラミックス基板１１及びセラミックス
基板１１’に、右側（図４（ｂ）中では）から取り付け
られた後に、内部に接着剤１５が注入され、その後、セ
ラミック板２２が左側（図４（ｂ）中では）から取り付
けられる。さらに、図４（ｂ）では不図示のセラミック
ス板２３及びセラミックス板２４が、前後から取り付け
られ、第２の中間部材５０が組み立てられる。Next, as shown in FIG. 4 (b), after the ceramic plate 21 is attached to the ceramic substrate 11 and the ceramic substrate 11 'from the right side (in FIG. 4 (b)), the adhesive 15 Is injected, and then the ceramic plate 22 is attached from the left side (in FIG. 4B). Further, a ceramic plate 23 and a ceramic plate 24 (not shown in FIG. 4B) are attached from front and rear, and the second intermediate member 50 is assembled.
【００４０】そして、図４（ｃ）に示すように、第２の
中間部材５０の銅膜１３ａ上及び開口部３３近傍のリ−
ド線１４側部、並びに銅膜１３’ａ上及び開口部３３’
近傍のリ−ド線１４側部に銅メッキ１６が形成される。Then, as shown in FIG. 4C, the lead on the copper film 13a of the second intermediate member 50 and near the opening 33 is formed.
And the opening 33 'on the copper film 13'a.
Copper plating 16 is formed on the side of the lead wire 14 in the vicinity.
【００４１】最後に、リード線１４の切断及び研磨など
が行われ、図１に示したコネクタ１が完成される。な
お、コネクタ１の用途に応じて、リード線１４の折り曲
げなどの各種変形は可能である。また、リード線１４の
本数も用途に応じて変更可能である。Finally, the lead wire 14 is cut and polished to complete the connector 1 shown in FIG. Various modifications such as bending of the lead wire 14 are possible depending on the use of the connector 1. Also, the number of the lead wires 14 can be changed according to the application.
【００４２】以上のように、本実施の形態のコネクタ１
の製造方法によれば、セラミックス基板１１の開口部３
２に、銅膜１３ａを蒸着させて、リード線１４を通し、
銅膜１３ａ上及び開口部３３近傍のリード線１４側部に
銅メッキ１６を形成し、セラミックス基板１１、リード
線１４、及び銅膜１３ａと銅メッキ１６の材料に原子間
距離及び熱膨張係数に近い材料を用いた（セラミック
ス、タングステン、及び銅の原子間距離は、それぞれ約
３Å, セラミックス、タングステン、及び銅の熱膨張係
数は約〜10-6/ ℃）ので、セラミックス基板１１、リー
ド線１４、及び銅膜１３ａと銅メッキ１６の密着度を向
上することができ、コネクタ１の気密性を高くすること
ができる。As described above, the connector 1 of the present embodiment
According to the method for manufacturing the opening 3 of the ceramic substrate 11,
2, a copper film 13a is deposited and passed through a lead wire 14,
Copper plating 16 is formed on the copper film 13 a and on the side of the lead wire 14 near the opening 33, and the material of the ceramic substrate 11, the lead wire 14, and the copper film 13 a and the copper plating 16 are reduced in the interatomic distance and the thermal expansion coefficient. Since a close material was used (the interatomic distance between ceramics, tungsten, and copper was about 3 mm each, and the coefficients of thermal expansion of ceramics, tungsten, and copper were about 10 -6 / ° C), the ceramic substrate 11 and the lead wires 14 were used. In addition, the degree of adhesion between the copper film 13a and the copper plating 16 can be improved, and the airtightness of the connector 1 can be increased.
【００４３】また、セラミックス基板１１及びペンキ層
１２に銅膜１３ａを蒸着させる際、IBAD法により蒸着さ
せるため、銅膜１３ａは、セラミックス基板１１に強固
に密着させて形成させることができ、銅膜１３ａの剥離
を抑止することができ、コネクタ１の気密性をさらに向
上することができる。When the copper film 13a is deposited on the ceramic substrate 11 and the paint layer 12, the copper film 13a is deposited by the IBAD method. The separation of the connector 13a can be suppressed, and the airtightness of the connector 1 can be further improved.
【００４４】さらに、ペンキ層１２上部に銅膜１３が強
固に蒸着されているため、ペンキ層１２を溶解する際、
ペンキ層１２上部に蒸着させられた銅膜１３も除去する
ことができ、銅膜１３ａを開口部３３近傍にのみ残留さ
せることができ、他の開口部の銅膜と隔離することがで
きるため、ショ−トを防止することができる。Further, since the copper film 13 is firmly deposited on the paint layer 12, when the paint layer 12 is dissolved,
The copper film 13 deposited on the paint layer 12 can also be removed, and the copper film 13a can be left only in the vicinity of the opening 33, and can be isolated from the copper film in other openings. Short can be prevented.
【００４５】このように構成されたコネクタ１は、超高
真空の高温時に内部の接着剤１５でガスが発生しないの
で、コネクタ１外部へのガスの発生がなく、液晶などに
悪影響を与えない。In the connector 1 configured as described above, no gas is generated by the internal adhesive 15 at the time of high temperature of ultra-high vacuum, so that no gas is generated outside the connector 1 and no adverse effect is exerted on the liquid crystal and the like.
【００４６】なお、以上においては、コネクタ１は、セ
ラミックス基板１１，１１’の外側にのみ銅膜１３ａ，
１３’ａを形成したが、セラミックス基板１１，１１’
の両側に銅膜を形成すれば、さらにコネクタ１の気密性
を向上することができる。In the above description, the connector 1 is provided with the copper film 13a,
13'a was formed, but the ceramic substrates 11, 11 '
If the copper films are formed on both sides of the connector 1, the airtightness of the connector 1 can be further improved.
【００４７】また、以上においては、コネクタ１は、セ
ラミックス基板１１，１１’、セラミックス板２１，２
２，２３，２４により囲むような構造としたが、構造の
各種変形は可能であり、例えば、全てを球形若しくは一
枚の板を変形させた形状の板で囲むようにして、内部に
接着剤１５を封入する構造としてもよい。In the above description, the connector 1 comprises the ceramic substrates 11 and 11 ′, the ceramic plates 21 and
Although the structure is such that it is surrounded by 2, 23, and 24, various modifications of the structure are possible. For example, the adhesive 15 is placed inside such that the entire structure is surrounded by a spherical plate or a plate obtained by deforming a single plate. It is good also as a structure which encloses.
【００４８】図６は、本実施の形態のコネクタの他の構
造を示す斜視図であり、図７は、図６のＢ−Ｂ’線での
断面図である。図６のコネクタ７０は、図１のコネクタ
１において、セラミックス板２３，２４を取り除いて、
セラミックス基板１１，１１’の間にセラミックス板７
１−１，７１−２，７１−３，７１−４の隙間が接着剤
１５により接着されて積層された構造となっている。FIG. 6 is a perspective view showing another structure of the connector according to the present embodiment, and FIG. 7 is a sectional view taken along line BB 'in FIG. The connector 70 shown in FIG. 6 is different from the connector 1 shown in FIG.
The ceramic plate 7 is placed between the ceramic substrates 11 and 11 '.
The gaps of 1-1, 71-2, 71-3, and 71-4 are laminated by bonding with an adhesive agent 15.
【００４９】そして、セラミックス基板１１，１１’及
びセラミックス板７１−１，７１−２，７１−３，７１
−４に開口部が形成され、その開口部にリード線１４が
通されている。そして、図１のコネクタ１と同様に、セ
ラミックス基板１１，１１’のリード線１４が通されて
いる開口部近傍に銅膜１３ａ，１３’ａ及び銅メッキ１
６が形成されている。Then, the ceramic substrates 11, 11 'and the ceramic plates 71-1, 71-2, 71-3, 71
-4, an opening is formed, and the lead wire 14 is passed through the opening. Similarly to the connector 1 shown in FIG. 1, the copper films 13a and 13'a and the copper plating 1 are provided near the openings of the ceramic substrates 11 and 11 'through which the lead wires 14 are passed.
6 are formed.
【００５０】その断面構造は、図７に示されており、セ
ラミックス板７１−１，７１−２，７１−３，７１−４
のリード線１４が通されている開口部９３−１，９３−
２，９３−３，９３−４にも、銅膜７３ａ−１，７３ａ
−２，７３ａ−３，７３ａ−４がそれぞれ形成されてい
る。The sectional structure is shown in FIG. 7, and the ceramic plates 71-1, 71-2, 71-3, 71-4
Openings 93-1 and 93- through which lead wires 14 of
2, 93-3, 93-4 also have copper films 73a-1, 73a.
-2, 73a-3 and 73a-4 are respectively formed.
【００５１】このコネクタ７０の製造方法は、図８及び
図９に示されており、図８はセラミックス板７１−１乃
至７１−４の製造方法を示す断面図であり、図９はその
後の、コネクタ７０の製造方法を示す断面図である。以
下、セラミックス板７１−１乃至７１−４を特に区別す
る必要のない場合、セラミックス板７１と称し、セラミ
ックス板７１のことをセラミックス基板７１とも称す
る。FIGS. 8 and 9 show a method of manufacturing the connector 70. FIG. 8 is a sectional view showing a method of manufacturing the ceramic plates 71-1 to 71-4, and FIG. FIG. 7 is a cross-sectional view illustrating a method for manufacturing the connector 70. Hereinafter, when it is not necessary to particularly distinguish the ceramic plates 71-1 to 71-4, they are referred to as ceramic plates 71, and the ceramic plates 71 are also referred to as ceramic substrates 71.
【００５２】図１のコネクタ１のセラミックス基板１
１，１１’と同様に、まず、図８（ａ）に示すように、
セラミックス基板７１上にペンキ層７２が塗布される。
次に、図８（ｂ）に示すように、図８（ａ）のように形
成されたセラミックス基板７１及びペンキ層７２に、点
線で示されるようにエキシマレーザが照射され、開口部
９１が形成される。この開口部９１は、コネクタ１の開
口部３１と異なり、セラミックス基板７１及びペンキ層
７２に同様な形状となるように形成される。The ceramic substrate 1 of the connector 1 of FIG.
Similarly to 1, 11 ′, first, as shown in FIG.
A paint layer 72 is applied on the ceramic substrate 71.
Next, as shown in FIG. 8B, the ceramic substrate 71 and the paint layer 72 formed as shown in FIG. 8A are irradiated with an excimer laser as shown by a dotted line to form an opening 91. Is done. This opening 91 is formed in the ceramic substrate 71 and the paint layer 72 so as to have a similar shape, unlike the opening 31 of the connector 1.
【００５３】そして、図８（ｃ）に示すように、セラミ
ックス基板７１とペンキ層７２の開口部９１及びペンキ
層７２上に銅膜７３がIBAD法により蒸着され、セラミッ
クス基板７１及びペンキ層７２に強固に密着される。Then, as shown in FIG. 8C, a copper film 73 is deposited by IBAD on the ceramic substrate 71, the opening 91 of the paint layer 72 and the paint layer 72. Strongly adhered.
【００５４】次いで、図８（ｄ）に示すように、ペンキ
層７２がシンナ−などの溶剤により溶解される。ペンキ
層７２に蒸着されている銅膜７３は、ペンキ層７２に強
固に密着しているため、ペンキ層７２が溶解される際、
同時に剥離され、セラミックス基板７１の開口部９３内
側にのみ、銅膜７３ａが蒸着された状態となる。このと
きのセラミックス基板７１を便宜上、第１の中間部材１
００と称する。Next, as shown in FIG. 8D, the paint layer 72 is dissolved by a solvent such as thinner. Since the copper film 73 deposited on the paint layer 72 is firmly adhered to the paint layer 72, when the paint layer 72 is dissolved,
At the same time, the copper film 73a is vapor-deposited only inside the opening 93 of the ceramic substrate 71. At this time, the first intermediate member 1 is attached to the ceramic substrate 71 for convenience.
00.
【００５５】そして、図９（ａ）に示すように、図１の
コネクタ１と同様の製造方法により形成された第１の中
間部材４０，４０’（セラミックス基板１１，１１’）
の間に、上述した製造方法により形成された第１の中間
部材１００−１，１００−２，１００−３，１００−４
の隙間が接着剤１５により接着されつつ積層される。Then, as shown in FIG. 9A, the first intermediate members 40, 40 '(ceramic substrates 11, 11') formed by the same manufacturing method as the connector 1 of FIG.
In the meantime, the first intermediate members 100-1, 100-2, 100-3, 100-4 formed by the manufacturing method described above.
Are laminated while being bonded by the adhesive 15.
【００５６】次いで、図９（ｂ）に示すように、図中右
側及び左側からセラミックス板２１，２２が取り付けら
れ、第２の中間部材１１０が形成される。最後に、図１
のコネクタ１と同様に、第２の中間部材１１０のセラミ
ック板１１，１１’のリード線１４が通されている開口
部３３，３３’及び銅膜１３ａ，１３ａ’上に銅メッキ
１６が形成され、図７に示すコネクタ７０が完成する。
なお、図９（ｂ）に示すようなセラミックス板２１，２
２を取り付けずに、セラミックス基板１１，１１’のリ
ード線１４が通されている開口部及び銅膜１３ａ，１３
ａ’上に銅メッキ１６を形成して、コネクタを完成させ
てもよい。Next, as shown in FIG. 9B, ceramic plates 21 and 22 are attached from the right and left sides in the figure, and the second intermediate member 110 is formed. Finally, FIG.
Similarly to the connector 1, the copper plating 16 is formed on the openings 33, 33 'through which the lead wires 14 of the ceramic plates 11, 11' of the second intermediate member 110 are passed and the copper films 13a, 13a '. The connector 70 shown in FIG. 7 is completed.
Note that the ceramic plates 21 and 21 as shown in FIG.
2 and the openings through which the lead wires 14 of the ceramic substrates 11, 11 'are passed and the copper films 13a, 13a.
The connector may be completed by forming copper plating 16 on a ′.
【００５７】以上のように、図７のコネクタ７０によれ
ば、セラミックス基板１１，１１’の間に接着剤１５を
封入せずに、セラミックス基板７１を積層したので、接
着剤１５の使用料を減少することができ、コネクタ７０
の内部と外部の気圧差があっても、接着剤１５の外部へ
の漏れ出し、セラミックス基板１１，１１’，７１での
クラックの発生を防止することができる。As described above, according to the connector 70 of FIG. 7, the ceramic substrate 71 is laminated without enclosing the adhesive 15 between the ceramic substrates 11 and 11 '. The connector 70 can be reduced
Even if there is a pressure difference between the inside and the outside, leakage of the adhesive 15 to the outside and generation of cracks in the ceramic substrates 11, 11 ', 71 can be prevented.
【００５８】また、コネクタ７０の温度が上昇しても、
コネクタ７０の内部での接着剤１５の使用料を減少し、
セラミックス板７１という固体を使用したので、温度変
化による、コネクタ７０内部の変化を防止することがで
き、接着剤１５から発生するガスの外部への漏れ出し、
接着剤１５の外部への移動に伴うセラミックス板でのク
ラックの発生、さらに外部へのガスの漏れ出しを回避す
ることができる。Further, even if the temperature of the connector 70 rises,
Reduce the fee for using the adhesive 15 inside the connector 70,
Since the ceramic plate 71 is used as a solid, it is possible to prevent the inside of the connector 70 from changing due to a change in temperature, and to prevent the gas generated from the adhesive 15 from leaking to the outside.
The occurrence of cracks in the ceramic plate due to the movement of the adhesive 15 to the outside and the leakage of gas to the outside can be avoided.
【００５９】従って、本実施の形態のコネクタ１，７０
を各種電子機器に搭載しても、コネクタ１，７０を構成
するセラミックス基板１１のクラックの発生及びコネク
タ１，７０内部に封入又は接着されている接着剤１５の
漏れ出しなどを防止することができ、各種電子機器に搭
載された各部品に悪影響を及ぼすことがない。Therefore, the connectors 1 and 70 of the present embodiment
Can be prevented from cracking of the ceramic substrate 11 constituting the connectors 1 and 70 and leakage of the adhesive 15 sealed or adhered inside the connectors 1 and 70 even when the electronic component is mounted on various electronic devices. Also, there is no adverse effect on each component mounted on various electronic devices.
【００６０】また、コネクタ１，７０を装着した電子機
器の温度が上昇しても、コネクタ１，７０を構成するセ
ラミックス基板１１，７１でのクラック、コネクタ１，
７１内部に封入又は接着されている接着剤１５の漏れ出
し、及びコネクタ１，７０内部からのガスの発生を抑止
することができ、コネクタ１，７０の気密性を維持する
ことができる。Further, even if the temperature of the electronic device to which the connectors 1 and 70 are mounted rises, cracks in the ceramic substrates 11 and 71 constituting the connectors 1 and 70,
Leakage of the adhesive 15 sealed or adhered inside 71 and generation of gas from inside the connectors 1 and 70 can be suppressed, and the airtightness of the connectors 1 and 70 can be maintained.
【００６１】ここで、図１０に示すように、本実施の形
態のコネクタ１，７０を液晶表示装置１２０に搭載し、
温度を約３５０℃程度に上昇させてみて、本実施の形態
のコネクタ１，７０の気密性が向上しているかどうかに
ついて確かめた。図１０は、本実施の形態のコネクタ
１，７０が搭載された液晶表示装置１２０の上部を開け
て示しており、液晶パネル１２１の側部に搭載された液
晶駆動用IC１２２がリード線１４によりコネクタ１，７
０に接続され、さらにコネクタ１，７０からリード線１
４が液晶パネル１２１の外部に延び出している様子を示
している。Here, as shown in FIG. 10, the connectors 1 and 70 of this embodiment are mounted on the liquid crystal display device 120,
By raising the temperature to about 350 ° C., it was confirmed whether or not the airtightness of the connectors 1 and 70 of the present embodiment was improved. FIG. 10 shows the liquid crystal display device 120 on which the connectors 1 and 70 of the present embodiment are mounted in an open state, and the liquid crystal driving IC 122 mounted on the side of the liquid crystal panel 121 is connected to the lead wires 14 through the connector 14. 1,7
0, and lead wires 1 from connectors 1 and 70
4 shows a state where the reference numeral 4 extends outside the liquid crystal panel 121.
【００６２】このような液晶表示装置１２０で、温度を
約３５０度に上昇させてみても、本実施の形態のコネク
タ１，７０には、クラックが生じず、接着剤１５の外部
への漏れ出し、コネクタ１，７０の外部へのガスの発生
もなく、コネクタ１，７０の気密性が向上していること
がわかった。Even if the temperature is raised to about 350 degrees in such a liquid crystal display device 120, no crack occurs in the connectors 1 and 70 of the present embodiment, and the adhesive 15 leaks out. It was found that no gas was generated outside the connectors 1 and 70, and the airtightness of the connectors 1 and 70 was improved.
【００６３】本実施の形態のコネクタ１，７０は、上述
した液晶表示装置１２０のみならず、パーソナルコンピ
ュータなどの各種電子機器に用いられるコネクタに使用
することが可能であり、電子機器内部の温度が上昇して
も、コネクタの気密性を保ち、電子機器内部の各部品に
悪影響を与えることはない。The connectors 1 and 70 of the present embodiment can be used not only for the liquid crystal display device 120 described above but also for connectors used in various electronic devices such as personal computers. Even if it rises, the airtightness of the connector is maintained, and each component inside the electronic device is not adversely affected.
【００６４】図１１は、本実施の形態のコネクタ１，７
０をエポキシ系樹脂１３２で覆い、フランジ１３１に装
着した接続端子１３０を示している。図１２は、この接
続端子１３０を真空炉１４０の開口部１４１との間に、
気密性を保つためＯリング１４２を装着し、ネジ穴１３
３にネジ１４３を通して取り付けた様子を示している。
接続端子１３０は、リード線１４により真空炉１４０内
部の電子部品と、外部の電子機器とを接続している。FIG. 11 shows the connectors 1 and 7 of this embodiment.
0 is covered with an epoxy-based resin 132, and the connection terminal 130 mounted on the flange 131 is shown. FIG. 12 shows that the connection terminal 130 is placed between the connection terminal 130 and the opening 141 of the vacuum furnace 140.
An O-ring 142 is attached to maintain airtightness, and screw holes 13
3 shows a state in which it is attached through a screw 143.
The connection terminal 130 connects an electronic component inside the vacuum furnace 140 and an external electronic device by a lead wire 14.
【００６５】図１２のように、接続端子１３０を真空炉
１４０等に搭載し、外部の電子機器の接続に用いても、
真空炉１４０内が超高真空にもかかわらず、コネクタ
１，７０からの接着剤１５の漏れ出し、及びセラミック
ス基板１，７１でのクラックの発生は起こらず、コネク
タ１，７０の気密性が向上していることが分かった。As shown in FIG. 12, even if the connection terminal 130 is mounted on a vacuum furnace 140 or the like and used to connect an external electronic device,
Despite the ultra-high vacuum inside the vacuum furnace 140, the leakage of the adhesive 15 from the connectors 1 and 70 and the occurrence of cracks in the ceramic substrates 1 and 71 do not occur, and the airtightness of the connectors 1 and 70 is improved. I knew I was doing it.
【００６６】[0066]
【発明の効果】以上のように、請求項１に記載の接続端
子によれば、接続線が通されている基板の開口部に、接
続線と基板の原子間距離及び熱膨張係数に近い第１の金
属膜が形成され、接続線が通された基板の開口部近傍に
第１の金属膜と同一の第２の金属膜が形成され、接続
線、基板、第１の金属膜、及び第２の金属膜が強固に密
着されているため、接続端子の気密性を高めることがで
き、接続端子の内部と外部の気圧差があったとしても、
基板でのクラックの発生を防止することができる。ま
た、請求項１に記載の接続端子の温度が上昇しても、接
続線、基板、第１の金属膜、及び第２の金属膜は、それ
ぞれの原子間距離及び熱膨張係数が近く、強固に密着さ
れつつ、ほぼ同様に膨張するため、接続端子の気密性を
維持することができ、接続端子の内部と外部の気圧差が
大きくなったとしても、基板でのクラックの発生を防止
することができる。As described above, according to the connection terminal according to the first aspect, the opening of the substrate through which the connection line is passed has a third terminal close to the distance between the connection line and the substrate and the thermal expansion coefficient. A first metal film is formed, a second metal film identical to the first metal film is formed near the opening of the substrate through which the connection line is passed, and the connection line, the substrate, the first metal film, and the second metal film are formed. Since the metal film 2 is tightly adhered, the airtightness of the connection terminal can be improved, and even if there is a pressure difference between the inside and the outside of the connection terminal,
The occurrence of cracks in the substrate can be prevented. In addition, even if the temperature of the connection terminal according to claim 1 increases, the connection line, the substrate, the first metal film, and the second metal film have close interatomic distances and thermal expansion coefficients, and are strong. The contact terminals are inflated almost in the same way, so that the airtightness of the connection terminals can be maintained, and even if the pressure difference between the inside and the outside of the connection terminals becomes large, the occurrence of cracks on the substrate is prevented. Can be.
【００６７】また、請求項２に記載の接続端子によれ
ば、請求項１に記載の接続端子において、接続線が第１
の基板及び第２の基板の第１の金属が形成されている開
口部に通され、接続線、第１の基板、第２の基板、第１
の金属膜、及び第２の金属膜が強固に密着されているた
め、内部に接着剤が封入されていても、接続端子の気密
性を高めることができ、接続端子の内部と外部の気圧差
が大きくなったとしても、基板でのクラックの発生、内
部に封入されている接着剤の外部への漏れ出し、及び接
続端子の外部へのガスの発生を防止することができる。
また、請求項１に記載の接続端子の温度が上昇しても、
内部に封入されている接着剤は膨張するが、接続線、第
１の基板、第２の基板、第１の金属膜、及び第２の金属
膜は、それぞれの原子間距離及び熱膨張係数が近く、強
固に密着されつつ、ほぼ同様に膨張するため、接続端子
の気密性を維持することができ、接続端子の内部と外部
の気圧差が大きくなったとしても、基板でのクラックの
発生、内部に封入されている接着剤の外部への漏れ出
し、及び接続端子の外部へのガスの発生を防止すること
ができる。According to the connection terminal of the second aspect, in the connection terminal of the first aspect, the connection line is the first terminal.
Through the openings of the first and second substrates in which the first metal is formed, and the connection lines, the first substrate, the second substrate, and the first substrate.
Since the metal film and the second metal film are firmly adhered to each other, the airtightness of the connection terminal can be improved even if an adhesive is sealed inside, and the pressure difference between the inside and the outside of the connection terminal can be improved. Even when the size becomes larger, it is possible to prevent the occurrence of cracks in the substrate, the leakage of the adhesive enclosed therein to the outside, and the generation of gas to the outside of the connection terminals.
Further, even if the temperature of the connection terminal according to claim 1 increases,
Although the adhesive encapsulated therein expands, the connection lines, the first substrate, the second substrate, the first metal film, and the second metal film have respective interatomic distances and thermal expansion coefficients. Closely and firmly adhered to each other and expanded almost in the same way, the airtightness of the connection terminal can be maintained, and even if the pressure difference between the inside and the outside of the connection terminal becomes large, the generation of cracks on the substrate, It is possible to prevent leakage of the adhesive enclosed therein to the outside and generation of gas outside the connection terminal.
【００６８】また、請求項３に記載の接続端子によれ
ば、請求項１に記載の接続端子において、第１の基板及
び第２の基板の内部に第３の基板が挿入され、第３の基
板の開口部に第１の金属膜が形成されて接続線が通さ
れ、接続線、第３の基板、及び第１の金属膜が強固に密
着され、さらに第１の基板及び第２の基板の開口部に第
１の金属膜が形成されて接続線が通され、接続線が通さ
れた第１の基板及び第２の基板の開口部近傍に第２の金
属膜が形成され、接続線、第１の基板、第２の基板、第
１の金属膜、及び第２の金属膜が強固に密着されている
ので、接続端子の気密性を高めることができ、接続端子
の内部と外部の気圧差が大きくなったとしても、基板で
のクラックの発生、接続端子の外部へのガスの発生を防
止することができる。また、請求項３に記載の接続端子
の温度が上昇しても、挿入された第３の基板は、接続
線、第１の基板、第２の基板、第１の金属膜、及び第２
の金属膜の原子間距離及び熱膨張係数に近く、強固に密
着されつつ、ほぼ同様に膨張するため、接続端子の気密
性を維持することができ、接続端子の内部と外部の気圧
差が大きくなったとしても、基板でのクラックの発生、
及び接続端子の外部へのガスの発生を防止することがで
きる。According to the connection terminal of the third aspect, in the connection terminal of the first aspect, the third substrate is inserted into the first substrate and the second substrate, and The first metal film is formed in the opening of the substrate, the connection line is passed through, the connection line, the third substrate, and the first metal film are firmly adhered to each other, and further, the first substrate and the second substrate A first metal film is formed in an opening of the first substrate, a connection line is passed through, a second metal film is formed in the vicinity of the opening of the first substrate and the second substrate through which the connection line is passed, and the connection line is formed. Since the first substrate, the second substrate, the first metal film, and the second metal film are firmly adhered to each other, the airtightness of the connection terminal can be increased, and the inside and outside of the connection terminal can be improved. Even if the pressure difference becomes large, it is possible to prevent the generation of cracks on the substrate and the generation of gas outside the connection terminals. Further, even if the temperature of the connection terminal according to claim 3 rises, the inserted third substrate is formed of the connection line, the first substrate, the second substrate, the first metal film, and the second substrate.
The metal film is close to the interatomic distance and the coefficient of thermal expansion of the metal film, and it expands in almost the same manner while being tightly adhered, so that the airtightness of the connection terminal can be maintained, and the pressure difference between the inside and outside of the connection terminal is large. Even if it does, cracks will occur on the board,
Further, generation of gas to the outside of the connection terminal can be prevented.
【００６９】従って、請求項１乃至請求項３に記載の接
続端子を電子機器に搭載すれば、温度が上昇し、接続端
子の内部と外部との気圧差が大きくなったとしても、接
続端子の気密性を維持することができ、基板でのクラッ
クの発生、及び接続端子の外部へのガスの発生を防止す
ることができるため、電子機器に搭載されている各部品
に悪影響を与えることがない。Therefore, when the connection terminal according to any one of claims 1 to 3 is mounted on an electronic device, even if the temperature rises and the pressure difference between the inside and outside of the connection terminal increases, the connection terminal can be connected. Since airtightness can be maintained and generation of cracks on the substrate and generation of gas outside the connection terminals can be prevented, there is no adverse effect on each component mounted on the electronic device. .
【００７０】また、請求項４に記載の接続端子の製造方
法によれば、接続線を通す基板の開口部に、接続線と基
板の原子間距離及び熱膨張係数に近い第１の金属膜を形
成し、接続線、基板、及び第１の金属膜を強固に密着さ
せ、接続線が通された基板の開口部近傍に第１の金属膜
と同一の第２の金属膜を形成し、接続線、基板、第１の
金属膜、及び第２の金属膜を強固に密着させるため、接
続端子の気密性を高めることができ、接続端子の内部と
外部の気圧差があったとしても、基板でのクラックの発
生を防止することができる。また、請求項４に記載の接
続端子の製造方法により製造された接続端子の温度が上
昇しても、接続線、基板、第１の金属膜、及び第２の金
属膜は、原子間距離及び熱膨張係数が近く、強固に密着
されつつ、ほぼ同様に膨張するため、接続端子の気密性
を維持することができ、接続端子の内部と外部の気圧差
が大きくなったとしても、基板でのクラックの発生を防
止することができる。According to the method of manufacturing a connection terminal according to the fourth aspect, the first metal film close to the distance between the connection wire and the substrate and the coefficient of thermal expansion is formed in the opening of the substrate through which the connection wire passes. Forming the connection line, the substrate, and the first metal film firmly in contact with each other, forming a second metal film identical to the first metal film near the opening of the substrate through which the connection line is passed; Since the wire, the substrate, the first metal film, and the second metal film are firmly adhered to each other, the airtightness of the connection terminal can be improved, and even if there is a pressure difference between the inside and the outside of the connection terminal, the substrate Cracks can be prevented. In addition, even if the temperature of the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 4 increases, the connection wire, the substrate, the first metal film, and the second metal film maintain the interatomic distance and the interatomic distance. Since the coefficient of thermal expansion is close, and it expands in almost the same way while being firmly adhered, the airtightness of the connection terminal can be maintained, and even if the pressure difference between the inside and outside of the connection terminal becomes large, the Cracks can be prevented from occurring.
【００７１】また、請求項５に記載のコネクタの製造方
法によれば、請求項４に記載の接続端子の製造方法にお
いて、除去膜が基板よりも内側に残留されるように開口
部を形成し、第１の金属膜を開口部近傍に残留させるの
で、他の開口部近傍に残留された第１の金属膜と隔離さ
れ、接続端子でのショートを防止することができる。According to a fifth aspect of the present invention, in the method for manufacturing a connection terminal according to the fourth aspect, the opening is formed such that the removal film remains inside the substrate. Since the first metal film is left in the vicinity of the opening, the first metal film is separated from the first metal film remaining in the vicinity of the other opening, so that a short circuit at the connection terminal can be prevented.
【００７２】また、請求項６に記載の接続端子の製造方
法によれば、請求項５に記載の接続端子の製造方法にお
いて、基板と同一の工程により形成された第１の基板と
第２の基板の開口部に第１の金属を形成して接続線を通
し、接続線、第１の基板、第２の基板、及び第１の金属
膜を強固に密着させるので、接続端子の気密性を高める
ことができ、内部に封入された接着剤の接続端子の外部
への漏れ出し、及び基板でのクラックの発生を防止する
ことができる。また、請求項６に記載の接続端子の製造
方法により製造された接続端子の温度が上昇しても、接
続線、第１の基板、第２の基板、第１の金属膜、及び第
２の金属膜が強固に密着されつつ、ほぼ同様に膨張する
ため、接続端子の気密性を維持することができ、内部に
封入された接着剤の接続端子の外部への漏れ出し、及び
接続端子の外部へのガスの発生を防止することができ
る。According to a sixth aspect of the present invention, in the method of manufacturing a connection terminal according to the fifth aspect, the first substrate and the second substrate formed in the same step as the substrate are formed. The first metal is formed in the opening of the substrate, the connection line is passed through, and the connection line, the first substrate, the second substrate, and the first metal film are firmly adhered to each other. It is possible to prevent the leakage of the adhesive enclosed therein to the outside of the connection terminal and the occurrence of cracks in the substrate. Further, even when the temperature of the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 6 increases, the connection line, the first substrate, the second substrate, the first metal film, and the second metal film can be used. Since the metal film firmly adheres and expands in almost the same manner, the airtightness of the connection terminal can be maintained, and the adhesive sealed inside leaks out of the connection terminal and the outside of the connection terminal. The generation of gas to the air can be prevented.
【００７３】また、請求項６に記載の接続端子の製造方
法によれば、請求項５に記載の接続端子の製造方法にお
いて、基板と同一の工程で形成された第１の基板及び第
２の基板の間に、第３の基板を挟み、第３の基板の開口
部に第１の金属膜を形成して接続線を通し、接続線、第
１の基板、第２の基板、第３の基板、第１の金属膜、及
び第２の金属膜を強固に密着させるので、接続端子の気
密性を高めることができ、接続端子の内部と外部の気圧
差があったとしても、基板でのクラックの発生を防止す
ることができる。また、請求項６に記載の接続端子の製
造方法により製造された接続端子の温度が上昇しても、
第３の基板は、第１の基板、第２の基板、接続線、第１
の金属膜と強固に密着されつつ、ほぼ同様に膨張するの
で、接続端子の気密性を維持することができ、接続端子
の内部と外部の気圧差があったとして、基板でのクラッ
クの発生を防止することができ、接続端子の外部へのガ
スの発生がない。According to a sixth aspect of the present invention, in the method of manufacturing a connection terminal according to the fifth aspect, the first substrate and the second substrate formed in the same step as the substrate are formed. A third substrate is sandwiched between the substrates, a first metal film is formed in an opening of the third substrate, and connection lines are passed through the connection lines, the first substrate, the second substrate, and the third substrate. Since the substrate, the first metal film, and the second metal film are firmly adhered to each other, the airtightness of the connection terminal can be improved, and even if there is a pressure difference between the inside and the outside of the connection terminal, the airtightness of the substrate can be reduced. Cracks can be prevented from occurring. Further, even if the temperature of the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 6 increases,
The third substrate includes a first substrate, a second substrate, a connection line, and a first substrate.
It expands in almost the same way while being firmly adhered to the metal film, so that the airtightness of the connection terminal can be maintained, and the occurrence of cracks on the substrate can be reduced even if there is a pressure difference between the inside and outside of the connection terminal. Gas can be prevented from being generated outside the connection terminal.
【００７４】また、請求項８に記載の接続端子の製造方
法によれば、請求項５又は請求項６に記載の接続端子の
製造方法において、開口部及び除去膜上に第１の金属膜
を形成する際、開口部及び除去膜上に第１の金属膜を蒸
着させ、蒸着させた第１の金属膜をイオンビームでスパ
ッタし、開口部近傍にのみ強固に密着された第１の金属
膜を残留させるので、製造された接続端子の気密性をさ
らに向上することができる。According to the method for manufacturing a connection terminal according to claim 8, in the method for manufacturing a connection terminal according to claim 5 or claim 6, the first metal film is formed on the opening and the removal film. When forming, the first metal film is vapor-deposited on the opening and the removal film, the vapor-deposited first metal film is sputtered with an ion beam, and the first metal film firmly adhered only near the opening is formed. Is left, so that the airtightness of the manufactured connection terminal can be further improved.
【００７５】また、請求項８に記載の接続端子の製造方
法によれば、請求項７に記載の接続端子の製造方法にお
いて、第３の基板及び除去膜に同様に形成された開口部
及び除去膜上に第１の金属膜を蒸着させ、蒸着させた第
１の金属膜をイオンビームでスパッタし、第３の基板の
開口部内側にのみ強固に密着された第１の金属膜を残留
させるので、製造された接続端子の気密性をさらに向上
することができる。According to the method for manufacturing a connection terminal according to the eighth aspect, in the method for manufacturing a connection terminal according to the seventh aspect, the opening and the removal similarly formed in the third substrate and the removal film. A first metal film is vapor-deposited on the film, and the vapor-deposited first metal film is sputtered with an ion beam to leave the first metal film firmly adhered only inside the opening of the third substrate. Therefore, the airtightness of the manufactured connection terminal can be further improved.
【００７６】また、請求項９に記載の接続端子及び請求
項１０に記載の接続端子の製造方法によれば、外部がエ
ポキシ系樹脂で覆われ、さらに、その外部がフランジに
装着されている接続端子の接続線を通す基板の開口部
に、接続線と基板の原子間距離及び熱膨張係数に近い第
１の金属膜を形成し、接続線、基板、及び第１の金属膜
を強固に密着させ、接続線が通された基板の開口部近傍
に第１の金属膜と同一の第２の金属膜を形成し、接続
線、基板、第１の金属膜、及び第２の金属膜を強固に密
着させるため、接続端子の気密性を高めることができ、
接続端子の内部と外部の気圧差が大きくなったとして
も、基板でのクラックの発生、及び接続端子の外部への
ガスの発生を防止することができる。また、請求項９に
記載の接続端子及び請求項１０に記載の接続端子の製造
方法により製造された接続端子の温度が上昇しても、接
続線、基板、第１の金属膜、及び第２の金属膜は、原子
間距離及び熱膨張係数が近く、強固に密着されつつ、ほ
ぼ同様に膨張するため、接続端子の気密性を維持するこ
とができ、接続端子の内部と外部の気圧差が大きくなっ
たとしても、基板でのクラックの発生、及び接続端子の
外部へのガスの発生などを防止することができる。According to the method for manufacturing a connection terminal according to the ninth aspect and the method for manufacturing the connection terminal according to the tenth aspect, the outside is covered with an epoxy resin, and the outside is mounted on a flange. A first metal film close to the atomic distance between the connection line and the substrate and a thermal expansion coefficient is formed in the opening of the substrate through which the connection line of the terminal passes, and the connection line, the substrate and the first metal film are firmly adhered to each other. Forming a second metal film identical to the first metal film in the vicinity of the opening of the substrate through which the connection line has been passed, and solidifying the connection line, the substrate, the first metal film, and the second metal film. Airtightness of the connection terminals,
Even if the pressure difference between the inside and the outside of the connection terminal becomes large, it is possible to prevent the generation of cracks on the substrate and the generation of gas to the outside of the connection terminal. In addition, even if the temperature of the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 9 and the method for manufacturing a connection terminal according to claim 10 increases, the connection line, the substrate, the first metal film, and the second Since the metal film has a close interatomic distance and thermal expansion coefficient, and is in close contact with each other and expands almost in the same manner, the airtightness of the connection terminal can be maintained, and the pressure difference between the inside and the outside of the connection terminal is reduced. Even if it becomes large, generation of cracks on the substrate and generation of gas to the outside of the connection terminal can be prevented.
【００７７】従って、請求項９に記載の接続端子及び請
求項１０に記載の接続端子の製造方法により製造された
接続端子を真空炉に装着しても、接続端子の気密性を維
持することができ、基板でのクラックの発生、接続端子
の外部へのガスの発生などを防止することができ、真空
炉内の電子部品に悪影響を与えることがない。Therefore, even when the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 9 and the connection terminal manufactured by the method for manufacturing a connection terminal according to claim 10 are mounted in a vacuum furnace, the airtightness of the connection terminal can be maintained. Thus, generation of cracks on the substrate, generation of gas to the outside of the connection terminals, and the like can be prevented, and the electronic components in the vacuum furnace are not adversely affected.
【図１】本発明の実施の形態のコネクタ１の構造を示す
斜視図である。FIG. 1 is a perspective view showing a structure of a connector 1 according to an embodiment of the present invention.
【図２】図１のコネクタ１のＡ−Ａ’線での断面図であ
る。FIG. 2 is a cross-sectional view of the connector 1 of FIG. 1 taken along line AA ′.
【図３】本発明の実施の形態のコネクタ１の製造方法の
工程を示す断面図である。FIG. 3 is a sectional view illustrating a step of a method for manufacturing the connector 1 according to the embodiment of the present invention.
【図４】本発明の実施の形態のコネクタ１の製造方法の
工程を示す断面図である。FIG. 4 is a cross-sectional view illustrating a step of a method for manufacturing the connector 1 according to the embodiment of the present invention.
【図５】本発明の実施の形態のコネクタ１の製造方法で
使用される真空炉６０を示す図である。FIG. 5 is a view showing a vacuum furnace 60 used in the method for manufacturing the connector 1 according to the embodiment of the present invention.
【図６】本発明の実施の形態の他の構造を有するコネク
タ７０の構造を示す斜視図である。FIG. 6 is a perspective view illustrating a structure of a connector 70 having another structure according to the embodiment of the present invention.
【図７】図６のコネクタ７０のＢ−Ｂ’線での断面図で
ある。7 is a cross-sectional view of the connector 70 of FIG. 6 taken along line BB '.
【図８】本発明の実施の形態のコネクタ７０のセラミッ
クス基板７１の製造方法の工程を説明する断面図であ
る。FIG. 8 is a cross-sectional view illustrating a step of a method for manufacturing ceramic substrate 71 of connector 70 according to the embodiment of the present invention.
【図９】本発明の実施の形態のコネクタ７０の製造方法
の工程を示す断面図である。FIG. 9 is a cross-sectional view showing a step of a method for manufacturing the connector 70 according to the embodiment of the present invention.
【図１０】本発明の実施の形態のコネクタ１，７０を液
晶表示装置１２０に搭載した例を示す斜視図である。FIG. 10 is a perspective view showing an example in which connectors 1, 70 according to the embodiment of the present invention are mounted on a liquid crystal display device 120.
【図１１】本発明の実施の形態のコネクタ１，７０を用
いて接続端子１３０を製造した例を示す正面図である。FIG. 11 is a front view illustrating an example in which the connection terminal 130 is manufactured using the connectors 1 and 70 according to the embodiment of the present invention.
【図１２】図１１の接続端子１３０を真空炉１４０に搭
載した例を示す断面図である。12 is a cross-sectional view showing an example in which the connection terminal 130 of FIG. 11 is mounted on a vacuum furnace 140.
【図１３】図１３（ａ）は従来のコネクタ２０１の構造
を示す断面図であり、図１３（ｂ）は従来のコネクタ２
０１のクラック２３１の発生を説明する断面図である。FIG. 13A is a cross-sectional view showing the structure of a conventional connector 201, and FIG.
FIG. 11 is a cross-sectional view illustrating generation of a crack 231 of FIG.
１，７０ コネクタ １１, １１’，７１ セラミックス基板（板） ２１, ２２，２３，２４ セラミックス板 １２，７２ ペンキ層 １３，１３ａ，１３’，１３’ａ，７３，７３ａ 銅膜 １４ リード線 １５ 接着剤 １６ 銅メッキ ３１，３１’，３２，３２’，３３，３３’，９１，９
２，９３ 開口部 ４０，１００ 第１の中間部材 ５０，１１０ 第２の中間部材 ６０ 真空炉 ６１ るつぼ ６２ ヒータ ６３ ビームガン ６４ 加速電極 １２０ 液晶表示装置 １２１ 液晶パネル １２２ 液晶駆動用IC １３０ 接続端子 １３１ フランジ １３２ エポキシ系樹脂 １３３ ネジ穴 １４０ 真空炉 １４１ 開口部 １４２ Ｏリング １４３ ネジ ２０１ コネクタ ２１１，２１１’，２２１，２２２ セラミックス板 ２１４ リード線 ２１５ 接着剤 ２３１ クラック1, 70 Connector 11, 11 ', 71 Ceramic substrate (plate) 21, 22, 23, 24 Ceramic plate 12, 72 Paint layer 13, 13a, 13', 13'a, 73, 73a Copper film 14 Lead wire 15 Adhesion Agent 16 Copper plating 31, 31 ', 32, 32', 33, 33 ', 91, 9
2, 93 Opening 40, 100 First intermediate member 50, 110 Second intermediate member 60 Vacuum furnace 61 Crucible 62 Heater 63 Beam gun 64 Acceleration electrode 120 Liquid crystal display device 121 Liquid crystal panel 122 Liquid crystal driving IC 130 Connection terminal 131 Flange 132 Epoxy resin 133 Screw hole 140 Vacuum furnace 141 Opening 142 O-ring 143 Screw 201 Connector 211, 211 ′, 221, 222 Ceramic plate 214 Lead wire 215 Adhesive 231 Crack
フロントページの続き (72)発明者 山田 義和 東京都西多摩郡瑞穂町高根651−６ 東成 エレクトロビーム株式会社内 (72)発明者 田中 康仁 東京都西多摩郡瑞穂町高根651−６ 東成 エレクトロビーム株式会社内 Ｆターム(参考） 5E023 AA04 AA29 BB03 BB22 CC02 CC22 EE36 FF20 GG02 GG11 HH16 HH25 5E077 BB01 BB31 CC02 DD19 GG29 JJ30 Continued on the front page (72) Yoshikazu Yamada 651-6, Takane, Mizuho-machi, Nishitama-gun, Tokyo, Tokyo Toshiba Electro Beam Co., Ltd. F term (reference) 5E023 AA04 AA29 BB03 BB22 CC02 CC22 EE36 FF20 GG02 GG11 HH16 HH25 5E077 BB01 BB31 CC02 DD19 GG29 JJ30
Claims (10)
子であって、 接続線が通されている基板の開口部に、前記接続線と前
記基板の原子間距離及び熱膨張係数に近い第１の金属膜
が形成され、前記接続線が通された前記基板の開口部近
傍に前記第１の金属膜と同一の第２の金属膜が形成され
ていることを特徴とする接続端子。1. A connection terminal for connecting an electronic component to an electronic component, wherein the connection terminal is provided at an opening of a substrate through which a connection line is passed, the terminal having a distance close to an atomic distance between the connection line and the substrate and a thermal expansion coefficient. A connection terminal, wherein a first metal film is formed, and a second metal film identical to the first metal film is formed near an opening of the substrate through which the connection line is passed.
基板及び第２の基板の開口部に通されていて、 前記第１の基板、前記第２の基板、及び４枚の板により
箱体が形成され、内部に接着剤が封入されていることを
特徴とする請求項１に記載の接続端子。2. The connection line is passed through openings of a first substrate and a second substrate, which are the same as the substrate, wherein the first substrate, the second substrate, and four plates are provided. The connection terminal according to claim 1, wherein a box body is formed by the above, and an adhesive is sealed inside.
基板及び第２の基板の開口部に通されていて、 前記第１の基板と前記第２の基板との間に第３の基板が
挿入され、前記接続線が通された前記第３の基板の開口
部に、前記第１の金属膜が形成されていることを特徴と
する請求項１に記載の接続端子。3. The connection line is passed through openings of a first substrate and a second substrate which are the same as the substrate, and a third line is provided between the first substrate and the second substrate. 2. The connection terminal according to claim 1, wherein the first metal film is formed in an opening of the third substrate through which the substrate is inserted and through which the connection line is passed. 3.
子の製造方法であって、 接続線を通す基板の開口部に、前記接続線と前記基板の
原子間距離及び熱膨張係数に近い第１の金属膜を形成し
た後に、前記第１の金属膜が形成された基板の開口部に
前記接続線を通し、前記接続線が通された基板の開口部
近傍に前記第１の金属膜と同一の第２の金属膜を形成す
ることを特徴とする接続端子の製造方法。4. A method of manufacturing a connection terminal for connecting an electronic component to an electronic component, the method comprising the steps of: After forming the first metal film, the connection line is passed through the opening of the substrate on which the first metal film is formed, and the first metal film is formed near the opening of the substrate through which the connection line is passed. A method for manufacturing a connection terminal, wherein the same second metal film is formed.
記基板上に後に除去可能な除去膜を形成し、前記除去膜
が前記基板よりも内側に残留されるように開口部を形成
し、該開口部及び前記除去膜上に前記第１の金属膜を形
成し、前記除去膜を除去して前記開口部に前記接続線を
通すことを特徴とする請求項４に記載の接続端子の製造
方法。5. When the connection line is passed through an opening of a substrate, a removal film that can be removed later is formed on the substrate, and the opening is formed such that the removal film remains inside the substrate. The connection terminal according to claim 4, wherein the first metal film is formed on the opening and the removal film, the removal film is removed, and the connection line passes through the opening. Manufacturing method.
口部に前記接続線を通す際、前記基板と同一の工程によ
り形成された第１の基板及び第２の基板の開口部に前記
接続線を通し、前記第１の基板及び前記第２の基板並び
に４枚の板により形成される箱体の内部に接着剤を封入
し、前記接続線が通された前記第１の基板及び前記第２
の基板の開口部近傍に前記第２の金属膜を形成すること
を特徴とする請求項５に記載の接続端子の製造方法。6. When the connection line is passed through an opening of the substrate on which the first metal film is formed, an opening of the first substrate and the opening of the second substrate formed in the same step as the substrate are formed. An adhesive is sealed inside the box formed by the first substrate, the second substrate, and the four plates through the connection lines, and the first substrate through which the connection lines are passed, The second
6. The method according to claim 5, wherein the second metal film is formed near the opening of the substrate.
口部に前記接続線を通す際、前記基板と同一の工程によ
り形成された第１の基板及び第２の基板とは異なる第３
の基板上に後に除去可能な除去膜を形成し、前記第３の
基板及び前記除去膜に同様な形状に開口部を形成し、該
開口部及び前記除去膜上に前記第１の金属膜を形成し、
前記除去膜を除去し、 その後、前記第１の基板及び前記第２の基板の間に前記
第３の基板を挟んで、前記第１の基板、前記第２の基
板、及び前記第３の基板の開口部に前記接続線を通すこ
とを特徴とする請求項５に記載の接続端子の製造方法。7. When the connection line is passed through an opening of the substrate on which the first metal film is formed, the first and second substrates formed by the same process as the substrate are different from the first and second substrates. 3
Forming a removal film that can be removed later on the substrate, forming an opening in the third substrate and the removal film in a similar shape, and forming the first metal film on the opening and the removal film. Forming
Removing the removal film; thereafter, sandwiching the third substrate between the first substrate and the second substrate, the first substrate, the second substrate, and the third substrate The method for manufacturing a connection terminal according to claim 5, wherein the connection line is passed through an opening of the connection terminal.
の金属膜を形成する際、前記開口部及び前記除去膜上に
前記第１の金属膜を蒸着させ、前記蒸着させた第１の金
属膜をイオンビームでスパッタすることを特徴とする請
求項５乃至請求項７のいずれか一項に記載の接続端子の
製造方法。8. The first opening on the opening and the removal film.
6. The method according to claim 5, wherein, when forming the metal film, the first metal film is deposited on the opening and the removal film, and the deposited first metal film is sputtered with an ion beam. A method for manufacturing a connection terminal according to claim 7.
子であって、 接続線が通されている基板の開口部に、前記接続線と前
記基板の原子間距離及び熱膨張係数に近い第１の金属膜
が形成され、前記接続線が通された前記基板の開口部近
傍に前記第１の金属膜と同一の第２の金属膜が形成され
ている接続端子の外部がエポキシ系樹脂で覆われ、前記
接続端子の外部にフランジが装着されていることを特徴
とする接続端子。9. A connection terminal for connecting an electronic component to an electronic component, wherein the connection terminal is provided in an opening of a substrate through which a connection line is passed, the terminal having an atomic distance and a thermal expansion coefficient close to the distance between the connection line and the substrate. The first metal film is formed, and a second metal film identical to the first metal film is formed near the opening of the substrate through which the connection line is passed. A connection terminal, wherein the connection terminal is covered and a flange is mounted outside the connection terminal.
端子の製造方法であって、 接続線を通す基板の開口部に、前記接続線と前記基板の
原子間距離及び熱膨張係数に近い第１の金属膜を形成し
た後に、前記第１の金属膜が形成された基板の開口部に
前記接続線を通し、前記接続線が通された基板の開口部
近傍に前記第１の金属膜と同一の第２の金属膜を形成し
て製造された接続端子の外部をエポキシ系樹脂で覆い、
さらに、前記接続端子の外部にフランジを装着すること
を特徴とする接続端子の製造方法。10. A method of manufacturing a connection terminal for connecting an electronic component to an electronic component, the method comprising the steps of: After forming the first metal film, the connection line is passed through the opening of the substrate on which the first metal film is formed, and the first metal film is formed near the opening of the substrate through which the connection line is passed. The outside of the connection terminal manufactured by forming the same second metal film is covered with an epoxy resin,
Further, a method of manufacturing a connection terminal, comprising mounting a flange outside the connection terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11105028A JP2000299149A (en) | 1999-04-13 | 1999-04-13 | Connecting terminal and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11105028A JP2000299149A (en) | 1999-04-13 | 1999-04-13 | Connecting terminal and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000299149A true JP2000299149A (en) | 2000-10-24 |
Family
ID=14396589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11105028A Pending JP2000299149A (en) | 1999-04-13 | 1999-04-13 | Connecting terminal and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000299149A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420096C (en) * | 2003-05-21 | 2008-09-17 | 安普泰科电子有限公司 | Electric connection structure, connector and electric connecting system |
| CN104670614A (en) * | 2014-12-30 | 2015-06-03 | 东莞市鸿展纸品有限公司 | Integrally-formed packaging box and forming process thereof |
| KR101605562B1 (en) | 2008-09-05 | 2016-03-22 | 쇼오트 아게 | Electrical lead-through for safety tanks |
-
1999
- 1999-04-13 JP JP11105028A patent/JP2000299149A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420096C (en) * | 2003-05-21 | 2008-09-17 | 安普泰科电子有限公司 | Electric connection structure, connector and electric connecting system |
| KR101605562B1 (en) | 2008-09-05 | 2016-03-22 | 쇼오트 아게 | Electrical lead-through for safety tanks |
| CN104670614A (en) * | 2014-12-30 | 2015-06-03 | 东莞市鸿展纸品有限公司 | Integrally-formed packaging box and forming process thereof |
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