JP2000286218A - Polishing member, polishing equipment and polishing method - Google Patents
Polishing member, polishing equipment and polishing methodInfo
- Publication number
- JP2000286218A JP2000286218A JP8815799A JP8815799A JP2000286218A JP 2000286218 A JP2000286218 A JP 2000286218A JP 8815799 A JP8815799 A JP 8815799A JP 8815799 A JP8815799 A JP 8815799A JP 2000286218 A JP2000286218 A JP 2000286218A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polished
- polishing member
- grooves
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えばＵＬＳＩ等
の半導体を製造するプロセスにおいて実施される半導体
デバイスの平坦化研磨に用いるのに好適な研磨部材、研
磨装置、及び研磨方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing member, a polishing apparatus, and a polishing method suitable for use in flattening and polishing a semiconductor device performed in a process of manufacturing a semiconductor such as ULSI.
【０００２】[0002]
【従来の技術】半導体集積回路の高集積化、微細化に伴
って半導体製造プロセスの工程が増加し複雑になってき
ている。これに伴い、半導体デバイスの表面は必ずしも
平坦ではなくなってきている。表面に於ける段差の存在
は配線の段切れ、局所的な抵抗の増大などを招き、断線
や電気容量の低下をもたらす。また、絶縁膜では耐電圧
劣化やリークの発生にもつながる。2. Description of the Related Art As the degree of integration and miniaturization of semiconductor integrated circuits increases, the number of steps in a semiconductor manufacturing process increases and becomes more complicated. Along with this, the surface of a semiconductor device is not necessarily flat. The presence of a step on the surface causes disconnection of the wiring, an increase in local resistance, and the like, resulting in disconnection and a decrease in electric capacity. In addition, in the case of an insulating film, withstand voltage degradation and leakage may occur.
【０００３】一方、半導体集積回路の高集積化、微細化
に伴って光リソグラフィの光源波長は短くなり、開口数
いわゆるNAが大きくなってきていることに伴い、半導体
露光装置の焦点深度が実質的に浅くなってきている。焦
点深度が浅くなることに対応するためには、今まで以上
にデバイス表面の平坦化が要求されている。このような
半導体表面を平坦化する方法としては、化学的機械的研
磨(Chemical Mechanical Polishing又はChemical Mecha
nical Planarization 、これよりCMP と呼ぶ)技術が有
望な方法と考えられている。On the other hand, the light source wavelength of optical lithography has been shortened with the increase in the degree of integration and miniaturization of semiconductor integrated circuits, and the numerical aperture, or NA, has been increased. It is getting shallower. In order to cope with the shallow depth of focus, flattening of the device surface is required more than ever. As a method of flattening such a semiconductor surface, a chemical mechanical polishing (Chemical Mechanical Polishing or Chemical Mecha
(Nical Planarization, hereinafter referred to as CMP) is considered a promising method.
【０００４】CMP は図４に示すような装置を用いて行わ
れている。図４で１はCMP 装置、１０は研磨体、３は研
磨対象物保持部( 研磨ヘッド) 、４は研磨対象物( ウェ
ハ)、５は研磨剤供給部、６は研磨剤である。研磨体１
０は、定盤７の上に研磨パッド２を貼り付けたものであ
る。研磨パッド２としては、発泡ポリウレタンよりなる
シート状のもの、あるいは表面に溝構造を有した無発泡
樹脂よりなるものが使用されている。研磨ヘッド３は適
当な手段により回転運動（１００）し、また研磨体１０
は適当な手段により回転運動（１０１）する。この過程
でウェハ４は、研磨剤６と研磨パッド２の作用により被
研磨面が研磨される。[0004] CMP is performed using an apparatus as shown in FIG. In FIG. 4, 1 is a CMP apparatus, 10 is a polishing body, 3 is a polishing object holding section (polishing head), 4 is a polishing object (wafer), 5 is an abrasive supply section, and 6 is an abrasive. Polishing body 1
Numeral 0 indicates that the polishing pad 2 was attached to the surface plate 7. As the polishing pad 2, a sheet-like thing made of foamed polyurethane or a thing made of non-foamed resin having a groove structure on its surface is used. The polishing head 3 is rotated (100) by appropriate means, and the polishing body 10
Is rotated (101) by any suitable means. In this process, the surface to be polished of the wafer 4 is polished by the action of the polishing agent 6 and the polishing pad 2.
【０００５】ＣＭＰ装置のプロセス安定性については、
研磨パッドの処理枚数が増えた時にも安定した均一性、
平坦性を示す他に、デバイスの断線や絶縁破壊の点から
スクラッチ（傷）の無いことも要求されている。[0005] Regarding the process stability of the CMP apparatus,
Stable uniformity even when the number of processed polishing pads increases,
In addition to flatness, it is required that the device be free of scratches in view of disconnection and dielectric breakdown of the device.
【０００６】[0006]
【発明が解決しようとする課題】従来のＣＭＰ装置に於
いて、無発泡樹脂よりなる硬質研磨パッドは、パターン
の段差解消は良いが、ウェハに傷が生じやすい傾向があ
り、また、研磨レートが発泡ポリウレタンよりなる研磨
パッドに比べ低い傾向があった。本発明の目的は、傷の
発生が起こりにくく、且つ研磨レートが高い研磨パッ
ド、及び研磨装置、及び研磨方法を提供することにあ
る。In a conventional CMP apparatus, a hard polishing pad made of a non-foamed resin is effective in eliminating a step in a pattern, but has a tendency that a wafer is easily damaged, and a polishing rate is low. It tended to be lower than that of a polishing pad made of polyurethane foam. SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing pad, a polishing apparatus, and a polishing method that are less likely to cause scratches and have a high polishing rate.
【０００７】[0007]
【課題を解決するための手段】我々は、ウェハの傷発生
の原因を実験を繰り返し行い調査した。先ず、研磨パッ
ド自体を調査した結果、無発泡樹脂よりなる硬質研磨パ
ッドの表面に形成された溝構造に問題があることを見つ
けた。この溝構造形成時にその表面にバリが生じること
がある。このバリは研磨中に剥がれてくることもある。
このバリが研磨対象物すなわちウェハ表面に傷を発生さ
せる。更にこのバリが核となりスラリーの凝集が生じ、
凝集したスラリーがウェハ表面を傷つけることも見つけ
た。SUMMARY OF THE INVENTION We have repeatedly examined the cause of the occurrence of a scratch on a wafer and investigated it. First, as a result of investigating the polishing pad itself, it was found that there was a problem with the groove structure formed on the surface of the hard polishing pad made of non-foamed resin. When the groove structure is formed, burrs may be generated on the surface. The burrs may come off during polishing.
The burrs cause scratches on the object to be polished, that is, on the wafer surface. Furthermore, this burr becomes a nucleus and agglomeration of the slurry occurs,
The agglomerated slurry was also found to damage the wafer surface.
【０００８】更に、研磨時の定盤回転モータのトルク、
研磨ヘッド回転モータのトルク、及び揺動機構の負荷を
測定した。その結果、研磨部材により研磨対象物である
ウェハを研磨するために、研磨開始時から研磨部材と研
磨対象物との間に所定の一定圧力を加え、研磨を行う
と、研磨ヘッドのトルク（負荷）は研磨開始時に急激に
上昇し、それから徐々に一定値に漸近し、研磨終了時に
下がることを見つけた。そしてこのトルクの急激な上昇
により、ウェハの被研磨面に熱が発生したり、ウェハが
余計な振動を起こしていた。更にトルクの急激な上昇
は、研磨パッドの表面に存在するスラリーや研磨カスの
凝集物等の異物との非定常的な接触を起こす確率を高め
る。我々は、これらがウェハの傷発生の大きな原因であ
ることを見つけた。これらは無発泡樹脂よりなる硬質研
磨パッドのみならず、軟らかいパッドにおいてもウェハ
の傷発生の原因となっていた。Further, the torque of the platen rotating motor during polishing,
The torque of the polishing head rotating motor and the load of the swing mechanism were measured. As a result, when a predetermined constant pressure is applied between the polishing member and the object to be polished from the start of polishing in order to polish the wafer which is the object to be polished by the polishing member, the torque of the polishing head (load ) Was found to rise sharply at the start of polishing, then gradually approach a constant value and drop at the end of polishing. The sudden increase in the torque generates heat on the surface to be polished of the wafer or causes extra vibration of the wafer. Further, a sharp increase in torque increases the probability of causing unsteady contact with foreign substances such as agglomerates of slurry and polishing residue existing on the surface of the polishing pad. We have found that these are the major causes of wafer scratching. These have caused scratches on the wafer not only with a hard polishing pad made of a non-foamed resin but also with a soft pad.
【０００９】そこで本発明は、以上の問題を解決するた
めに、第一に「研磨対象物を保持する研磨ヘッドと研磨
部材とを具え、前記研磨部材と前記研磨対象物との間に
研磨剤を介在させた状態で、前記研磨部材と前記研磨対
象物を相対移動させることにより、前記研磨対象物を研
磨する研磨装置に用いる研磨部材に於いて、前記研磨部
材が、少なくともその表面が無発泡の高分子重合体から
成り、前記表面に溝構造が設けられ、更に前記表面に鋭
い端部を有しないことを特徴とする研磨部材（請求項
１）」を提供する。In order to solve the above problems, the present invention firstly provides a polishing head having a polishing head and a polishing member, wherein a polishing agent is provided between the polishing member and the polishing object. In a polishing member used in a polishing apparatus for polishing the polishing object by relatively moving the polishing member and the polishing object with the polishing member interposed therebetween, at least the surface of the polishing member has no foam. Wherein the grooved structure is provided on the surface and the surface does not have a sharp end.
【００１０】第二に「前記溝構造が、複数の交点を有す
る複数の溝から成り、前記交点に於ける溝が交差する角
度が2 度未満の鋭角を有しないことを特徴とする請求項
１記載の研磨部材（請求項２）」を提供する。第三に
「前記溝構造が、複数の交点を有する複数の溝から成
り、前記溝の部分に曲率半径５０μｍ未満の端部を有し
ないことを特徴とする請求項１記載の研磨部材（請求項
３）」を提供する。Second, the groove structure comprises a plurality of grooves having a plurality of intersections, and an angle at which the grooves intersect at the intersection does not have an acute angle of less than 2 degrees. The polishing member according to the present invention (Claim 2) is provided. Third, the polishing member according to claim 1, wherein the groove structure is composed of a plurality of grooves having a plurality of intersections, and the groove portion does not have an end having a radius of curvature of less than 50 μm. 3) ”.
【００１１】第四に「前記溝構造が、螺旋状溝と放射状
溝の組み合わせ、または同心円状溝と放射状溝の組み合
せ、または格子状溝の何れかから成ることを特徴とする
請求項１、２、３何れか１項記載の研磨部材（請求項
４）」を提供する。第五に「前記高分子重合体が、エポ
キシ樹脂、アクリル樹脂、ポリエステル樹脂、塩化ビニ
ール樹脂、及びポリカーボネート樹脂の群から選ばれた
何れか一つ以上の樹脂であることを特徴とする請求項１
〜４何れか１項記載の研磨部材（請求項５）」を提供す
る。Fourth, the groove structure is composed of a combination of a spiral groove and a radial groove, a combination of a concentric groove and a radial groove, or a lattice groove. The polishing member according to any one of claims 3 and 4 (Claim 4) is provided. Fifth, the high molecular polymer is at least one resin selected from the group consisting of an epoxy resin, an acrylic resin, a polyester resin, a vinyl chloride resin, and a polycarbonate resin.
The polishing member according to any one of claims 1 to 4 (Claim 5) is provided.
【００１２】第六に「研磨対象物を保持する研磨ヘッド
と少なくともその表面が無発泡の高分子重合体から成る
研磨部材とを用い、前記研磨部材と前記研磨対象物との
間に研磨剤を介在させた状態で、前記研磨部材と前記研
磨対象物を相対移動させることにより、前記研磨対象物
を研磨する研磨方法に於いて、前記研磨剤が２００ｎｍ
以下の粒径の酸化セリウム粒子を含むことを特徴とする
研磨方法（請求項６）」を提供する。Sixth, a polishing head for holding an object to be polished and a polishing member at least whose surface is made of a non-foamed high molecular polymer are used, and an abrasive is applied between the polishing member and the object to be polished. In a polishing method for polishing the polishing object by relatively moving the polishing member and the polishing object with the polishing member interposed therebetween, the polishing agent has a thickness of 200 nm.
A polishing method characterized by containing cerium oxide particles having the following particle diameter (claim 6) "is provided.
【００１３】第七に「前記研磨部材が、請求項１〜５何
れか１項記載の研磨部材であることを特徴とする請求項
６記載の研磨方法（請求項７）」を提供する。第八に
「研磨対象物を保持する研磨ヘッドと研磨部材とを用
い、前記研磨部材と前記研磨対象物との間に研磨剤を介
在させた状態で、前記研磨部材と前記研磨対象物を相対
移動させることにより、前記研磨対象物を研磨する研磨
方法に於いて、前記研磨対象物と前記研磨部材との間に
加重を徐々に加える段階を有することを特徴とする研磨
方法（請求項８）」を提供する。Seventh, there is provided "a polishing method according to claim 6, wherein the polishing member is the polishing member according to any one of claims 1 to 5 (claim 7)." Eighth, "using a polishing head and a polishing member for holding the polishing object, the polishing member and the object to be polished relative to each other in a state where an abrasive is interposed between the polishing member and the object to be polished. A polishing method for polishing an object to be polished by moving, the method further comprising gradually applying a load between the object to be polished and the polishing member (claim 8). "I will provide a.
【００１４】第九に「研磨対象物を保持する研磨ヘッド
と研磨部材とを具え、前記研磨部材と前記研磨対象物と
の間に研磨剤を介在させた状態で、前記研磨部材と前記
研磨対象物を相対移動させることにより、前記研磨対象
物を研磨する研磨装置に於いて、前記研磨対象物と前記
研磨部材との間に可変の荷重を与える加重機構と、研磨
部材を移動する研磨部材移動機構と、研磨対象物を移動
する研磨対象物移動機構と、前記研磨部材移動機構と前
記研磨対象物移動機構の片方または両方の移動の負荷を
検出するためのそれぞれの負荷検出機構と、前記どちら
か一方の負荷検出機構によって検出される負荷の値をも
とに前記加重機構が与える加重を制御するためのフィー
ドバック機構とを具えることを特徴とする研磨装置（請
求項９）」を提供する。Ninth, a polishing head and a polishing member for holding an object to be polished are provided, and a polishing agent is interposed between the polishing member and the object to be polished. In a polishing apparatus for polishing the object to be polished by relatively moving the object, a weighting mechanism for applying a variable load between the object to be polished and the polishing member, and a polishing member moving to move the polishing member A mechanism, a polishing object moving mechanism for moving the polishing object, a load detection mechanism for detecting a load of one or both of the polishing member moving mechanism and the polishing object moving mechanism, A polishing mechanism (claim 9) comprising: a feedback mechanism for controlling the weight given by the weighting mechanism based on the value of the load detected by one of the load detection mechanisms. That.
【００１５】第十に「研磨対象物を保持する研磨ヘッド
と研磨部材とを用い、前記研磨部材と前記研磨対象物と
の間に研磨剤を介在させた状態で、前記研磨部材と前記
研磨対象物を相対移動させることにより、前記研磨対象
物を研磨する研磨方法に於いて、前記研磨対象物または
前記研磨部材の移動負荷が一定になるよう前記研磨対象
物と前記研磨部材との間の荷重を調節する段階を有する
ことを特徴とする研磨方法（請求項１０）」を提供す
る。Tenth, "using a polishing head for holding an object to be polished and a polishing member, with the polishing agent interposed between the polishing member and the object to be polished, In the polishing method of polishing the object by relatively moving the object, the load between the object and the polishing member is adjusted so that the moving load of the object or the polishing member is constant. And a polishing method (claim 10).
【００１６】[0016]
【発明の実施の形態】［実施形態１］本実施形態の研磨
パッドは、その表面に形成した溝構造にバリがない。そ
のために、第一にバリが発生しない溝構造形成法を取る
こと、そのために溝形成が終わった研磨パッドの表面を
馴らす処理をすることも重要であるが、本発明では研磨
中に研磨パッドから剥がれてくるバリをなくすることに
着目した。[Embodiment 1] The polishing pad of this embodiment has no burrs in a groove structure formed on the surface thereof. For that purpose, it is important to firstly adopt a groove structure forming method in which burrs do not occur, and therefore, it is important to perform a process of adjusting the surface of the polishing pad after the groove formation, but in the present invention, the polishing pad is removed from the polishing pad during polishing. We focused on eliminating burrs that come off.
【００１７】本実施形態の研磨パッドの溝構造は、溝構
造を構成する複数の溝が交差する交点での交差角度が２
度以下の鋭角を持たない。これによって、研磨中に剥が
れてくるバリを大きく低減できるのである。このために
は、同心円状と放射状の溝の組み合せ（図１（ａ））、
螺旋状と放射状の組み合せ、あるいは格子溝のみの構造
（図１（ｂ））が最も有効である。これらの溝構造の場
合、交差角度は９０度になる。放射状の溝の場合には、
放射状の溝を構成する複数の溝が交差する交点（通常は
研磨パッドの中央部）での交差角度が２度以上の角度を
有するようにする。このためには、放射状の溝を構成す
る複数の溝を等角度間隔で設けた場合は、複数の溝を１
８０本を超えて形成しないことが好ましい。更に放射状
の溝を構成する複数の溝の長さを長短交互に取り混ぜ、
研磨パッドの中央付近で、放射状の溝を構成する短い方
の複数の溝の研磨パッドの中心側の終端を同心円状に配
置することも好ましい。このように、研磨パッドの加工
面には鋭い端部を有しないことが好ましく、具体的には
曲率半径５０μｍ未満の端面を研磨パッドの加工面に有
しないことが好ましい。 ［実施形態２］本実施形態は、実施形態１と組み合わせ
て用いられるスラリーである。According to the groove structure of the polishing pad of the present embodiment, the intersection angle at the intersection of the plurality of grooves constituting the groove structure is two.
Do not have an acute angle less than degrees. As a result, burrs coming off during polishing can be greatly reduced. For this purpose, a combination of concentric and radial grooves (FIG. 1A),
A combination of spiral and radial or a structure having only lattice grooves (FIG. 1B) is most effective. In the case of these groove structures, the intersection angle is 90 degrees. In the case of a radial groove,
The intersection angle at the intersection (usually the center of the polishing pad) where the plurality of grooves constituting the radial groove intersect has an angle of 2 degrees or more. For this purpose, when a plurality of grooves constituting a radial groove are provided at equal angular intervals, the plurality of grooves are set to one.
It is preferable not to form more than 80 lines. Furthermore, the length of the plurality of grooves constituting the radial groove is mixed alternately with the length,
In the vicinity of the center of the polishing pad, it is also preferable to arrange concentrically the ends of the plurality of shorter grooves constituting the radial groove on the center side of the polishing pad. As described above, it is preferable that the processing surface of the polishing pad does not have a sharp end, and specifically, it is preferable that the processing surface of the polishing pad does not have an end surface having a radius of curvature of less than 50 μm. [Embodiment 2] This embodiment is a slurry used in combination with Embodiment 1.
【００１８】本スラリーは、凝集を起こしにくい。凝集
し難いスラリーとしては酸化セリウムを含んだスラリー
が好ましく用いられる。ＣＭＰの誘電体の研磨には一般
に二酸化珪素（ＳｉＯ2 ）を含んだスラリーが多く使用
されている。このスラリーは安定性に優れているが、凝
集してガラスを形成しやすい性質を持つ。この凝集物は
研磨パッドの表面に凝集する。凝集する場所が溝の内部
の場合には凝集物は傷の原因にならないが、溝の外側、
即ち凸部の場合には傷の原因になりやすい。酸化セリウ
ムを含んだスラリーは水に溶けやすく、容易に水洗でき
凝集し難いため、無発泡樹脂よりなる硬質研磨パッド
（以下無発泡研磨パッドと呼ぶ）に適している。発泡研
磨パッドで酸化セリウムのスラリーを使用した場合、研
磨パッドの加工面の発泡内でのスラリーの保持力が高い
ため、過剰にセリウム砥粒が残り、研磨の安定性に影響
を及ぼしていた。即ち、時間と共に研磨速度が変化する
問題や、スラリー供給の制御操作に対しての応答性が低
い問題があった。これに比べ、無発泡研磨パッドは保持
力が低く、前の状態の影響を引きずらないため、スラリ
ー濃度の制御の操作が直ちに研磨性、特に研磨速度に反
映し、安定した研磨特性を保つことが出来る。The slurry is less likely to agglomerate. A slurry containing cerium oxide is preferably used as the slurry that hardly aggregates. Generally, a slurry containing silicon dioxide (SiO 2 ) is often used for polishing a dielectric of CMP. Although this slurry has excellent stability, it has a property of easily forming glass by agglomeration. The aggregates aggregate on the surface of the polishing pad. Agglomerates do not cause scratches if the place where they aggregate is inside the groove, but outside the groove,
That is, in the case of a convex portion, it is likely to cause a scratch. A slurry containing cerium oxide is easily soluble in water, easily washed with water, and hardly aggregated, and thus is suitable for a hard polishing pad made of a non-foamed resin (hereinafter referred to as a non-foamed polishing pad). When a slurry of cerium oxide is used in a foamed polishing pad, cerium abrasive grains remain excessively due to a high holding power of the slurry in the foaming of the processing surface of the polishing pad, which affects the polishing stability. That is, there is a problem that the polishing rate changes with time and a problem that the response to the control operation of the slurry supply is low. In contrast, non-foamed polishing pads have a low holding power and do not drag the influence of the previous state, so that the operation of controlling the slurry concentration is immediately reflected on the polishing properties, especially on the polishing rate, so that stable polishing characteristics can be maintained. I can do it.
【００１９】更に、無発泡研磨パッドと酸化珪素のスラ
リーの組み合せでは、研磨レートを高めることは困難で
あったが、酸化セリウムスラリーとの組み合せにより高
い研磨速度が得られる。 ［実施形態３］本実施形態は、図２に示され、傷を低減
する研磨装置である。本発明は図２に限定されない。Further, it has been difficult to increase the polishing rate with a combination of a non-foamed polishing pad and a slurry of silicon oxide, but a high polishing rate can be obtained by combining with a cerium oxide slurry. [Embodiment 3] This embodiment is a polishing apparatus shown in FIG. 2 for reducing scratches. The present invention is not limited to FIG.
【００２０】図２で１０は研磨体、３は研磨ヘッド、４
はウェハ、５は研磨剤供給部、６は研磨剤である。研磨
ヘッド３はウェハ４を保持すると共に、ウェハを回転す
る。研磨体１０は、定盤７の上に研磨パッド２を貼り付
けたものである。３０は研磨ヘッドを回転させる回転モ
ータ、３１は回転モータ３０の回転トルクを検出する回
転トルク検出機構、４１は揺動運動（研磨パッドの加工
面に平行な直線振動運動）の負荷検出機構、６１は研磨
ヘッド３に揺動運動を与える揺動機構、５１はウェハ４
の被研磨面に荷重を与える加重機構であり、外部から受
信された負荷または回転トルク信号に応じて加重を調整
可能な加重調整機構を具える。２０は定盤回転モータ、
２１は定盤回転の回転トルク検出機構である。In FIG. 2, 10 is a polishing body, 3 is a polishing head, 4
Is a wafer, 5 is an abrasive supply section, and 6 is an abrasive. The polishing head 3 holds the wafer 4 and rotates the wafer. The polishing body 10 is obtained by attaching a polishing pad 2 on a surface plate 7. Numeral 30 is a rotary motor for rotating the polishing head, 31 is a rotary torque detecting mechanism for detecting the rotary torque of the rotary motor 30, 41 is a load detecting mechanism for oscillating motion (linear vibration motion parallel to the processing surface of the polishing pad), 61 Is a swing mechanism for giving a swinging motion to the polishing head 3, and 51 is a wafer 4
And a weight adjusting mechanism capable of adjusting the weight according to a load or rotation torque signal received from the outside. 20 is a surface plate rotation motor,
Reference numeral 21 denotes a rotation torque detection mechanism for rotating the platen.
【００２１】研磨パッド２としては、表面に溝構造を有
した無発泡樹脂よりなるものが使用されている。研磨ヘ
ッド３は回転モータ３０により回転運動し、また研磨体
１０は定盤回転モータ２０により回転運動する。この過
程でウェハ４は、研磨剤６と研磨パッド２の作用により
被研磨面が研磨される。本研磨装置は以下のように動作
する。研磨中に定盤トルク検出機構２１は定盤回転モー
タの回転トルクを、研磨ヘッドトルク検出機構３１は研
磨ヘッド回転モータ３０の回転トルクを、そして揺動負
荷検出機構４１は揺動機構６１から揺動負荷を検出す
る。定盤トルク検出機構２１または研磨ヘッドトルク検
出機構３１または揺動負荷検出機構４１の何れかからの
トルクまたは負荷信号は加重機構５１にフィードバック
され、加重機構５１はこのトルクまたは負荷信号を予め
設定された基準信号と比較し、その差分に応じて加重を
増減する。具体的にはトルクまたは負荷が基準よりも大
きいときには加重を軽減し、逆に基準よりも小さいとき
には加重を増加させ、このようにして加重機構５１の与
える加重の結果生じる被研磨面の荷重による回転トルク
または揺動負荷は常に一定に維持される。The polishing pad 2 is made of a non-foamed resin having a groove structure on the surface. The polishing head 3 is rotated by a rotary motor 30, and the polishing body 10 is rotated by a platen rotary motor 20. In this process, the surface to be polished of the wafer 4 is polished by the action of the polishing agent 6 and the polishing pad 2. The polishing apparatus operates as follows. During polishing, the platen torque detecting mechanism 21 detects the rotational torque of the platen rotating motor, the polishing head torque detecting mechanism 31 detects the rotating torque of the polishing head rotating motor 30, and the swing load detecting mechanism 41 swings from the swinging mechanism 61. Detect dynamic load. The torque or load signal from any of the platen torque detecting mechanism 21, the polishing head torque detecting mechanism 31, and the swing load detecting mechanism 41 is fed back to the weighting mechanism 51, and the weighting mechanism 51 sets the torque or load signal in advance. Then, the weight is increased or decreased according to the difference. Specifically, when the torque or the load is larger than the reference, the load is reduced, and when the torque or the load is smaller than the reference, the load is increased, and thus the rotation of the polished surface due to the load given by the load given by the load mechanism 51 is caused. The torque or oscillating load is always kept constant.
【００２２】トルクまたは負荷を制御する対象は好まし
くは研磨ヘッド回転モータ３０である。以上の例では、
研磨の間トルクまたは負荷が終始制御されたが、もっと
簡略的に、トルク、または負荷のフィードバック制御を
行わなくて、単に図２に於いて、研磨ヘッドへの加重を
段階的に加えるのみでも良い。この場合は、フィードバ
ック制御に必要な外部信号に応じて加重を調整する加重
調整機構、等の機能は不要となる。図３は研磨部材と研
磨ヘッドとが共に定速度で回転しているときの、研磨ヘ
ッドの与える加重と研磨ヘッド回転モータの回転トルク
の時間的変化を示す。図３（ａ）は、研磨開始と同時に
一定値の加重を与えた場合であり、図３（ｂ）は、研磨
開始から段階的に徐々に加重を一定値まで増加させた場
合である。図３（ａ）は、トルクが、研磨開始直後に急
上昇し、数秒後に急低下し、約１０秒後に一定値に落ち
着くことを示している。これは静止摩擦から動摩擦への
切り替わりを示す。これに対して図３（ｂ）は、トルク
が、研磨開始直後からほぼ一定に安定している。The object whose torque or load is to be controlled is preferably the polishing head rotating motor 30. In the above example,
Although the torque or load was controlled throughout the polishing, more simply, the feedback to the torque or load may not be performed, and only the load on the polishing head may be gradually applied in FIG. . In this case, a function such as a weight adjustment mechanism that adjusts the weight according to an external signal necessary for feedback control becomes unnecessary. FIG. 3 shows a temporal change in the load applied by the polishing head and the rotational torque of the polishing head rotating motor when both the polishing member and the polishing head are rotating at a constant speed. FIG. 3A shows a case where a constant weight is applied at the same time as the start of polishing, and FIG. 3B shows a case where the weight is gradually increased to a constant value in a stepwise manner from the start of polishing. FIG. 3A shows that the torque sharply increases immediately after the start of polishing, sharply decreases after a few seconds, and reaches a constant value after about 10 seconds. This indicates a switch from static friction to dynamic friction. On the other hand, FIG. 3B shows that the torque is almost constant and stable immediately after the start of polishing.
【００２３】本発明は研磨開始直後のトルクの急激な増
大が、研磨部材と研磨対象物に及ぼす影響を考慮し、例
えばその急激な変化時に研磨対象物表面に傷が発生しや
すい等の実験的結果から、トルクを出来るだけ一定に制
御すれば傷を防止できるのではないかとの推定の基に行
われた。その結果、傷の減少だけでなく、余計な振動や
熱の発生が抑えられて、安定した研磨結果を得ることが
可能となった。The present invention considers the effect of a sudden increase in torque immediately after the start of polishing on the polishing member and the object to be polished. Based on the results, it was estimated that if the torque was controlled as constant as possible, damage could be prevented. As a result, not only the reduction of scratches but also the generation of unnecessary vibration and heat is suppressed, and a stable polishing result can be obtained.
【００２４】上の説明では研磨ヘッド、プラテンともに
移動のために回転を行った例であるが、例えば片方が直
線運動の場合でも、所謂相対運動を行っている場合にも
有効であることは言うまでもない。更に図２では揺動機
構を研磨ヘッド側に設けたが、これを研磨体側に設けて
も良いことは言うまでもない。In the above description, the polishing head and the platen are both rotated for movement. However, it is needless to say that the present invention is effective even when one of the polishing head and the platen performs a linear motion or a so-called relative motion. No. Further, in FIG. 2, the swing mechanism is provided on the polishing head side, but it is needless to say that this mechanism may be provided on the polishing body side.
【００２５】[0025]
【実施例】［実施例１］以下の実施例は実施形態１に対
応する。先ず硬質研磨パッドを以下のように作製した。
材料として、エポキシ主剤エピコート８２８、エピコー
ト８７１( 共に油化シェルエポキシ社製) と硬化剤ジア
ミノジフェニルメタンを重量比２．６：３．９：１で混
合、攪拌し、φ800 ｍｍのサイズの型に流し込み、15０
゜C で8 時間加熱し硬化させた。次いで、切削加工で、
上記エポキシ樹脂表面にピッチ0.5mm 、深さ0.3mm の螺
旋状Ｖ溝( Ｖ角度60゜）と、幅2mm 、深さ0.5mm の5 度
刻みの放射状溝を形成し、研磨パッドとした。図５に本
溝の断面形状の拡大図を示す。[Example 1] The following example corresponds to the first embodiment. First, a hard polishing pad was produced as follows.
As materials, an epoxy base material Epicoat 828, Epicoat 871 (both manufactured by Yuka Shell Epoxy) and a curing agent diaminodiphenylmethane are mixed at a weight ratio of 2.6: 3.9: 1, stirred, and poured into a die having a size of 800 mm. , 150
Heated at ゜ C for 8 hours to cure. Then, in the cutting process,
On the surface of the epoxy resin, spiral V-grooves having a pitch of 0.5 mm and a depth of 0.3 mm (V-angle of 60 °) and radial grooves having a width of 2 mm and a depth of 0.5 mm in increments of 5 ° were formed to obtain a polishing pad. FIG. 5 shows an enlarged view of the cross-sectional shape of the groove.
【００２６】この研磨パッドを定盤に両面テープで貼り
付け研磨パッドとし、研磨対象物として熱酸化膜が1 μ
m 形成された6 インチシリコンウエハを表面張力で研磨
ヘッドの弾性膜（バッキングフィルム）に固定し、以下
に示す研磨条件で研磨を行った。 研磨条件 ・研磨パッド回転数:50rpm ・研磨ヘッド回転数:50rpm ・揺動距離:30mm ・揺動頻度:15 往復/ 分 ・研磨剤:Cabot社製SEMI Supers25 を2 倍に希釈（酸化
珪素スラリー） ・研磨剤流量:200ml/ 分 ・ウェハへの荷重；460g/cm2 このように研磨されたウェハの研磨速度を測定したとこ
ろ、２００ｎｍ／分が得られた。研磨面を傷検査機で検
査したところ、傷は発見されなかった。 ［比較例］溝構造を除いて、実施例１と同じ条件で研磨
パッドを作製した。溝構造は、図６の平面拡大図で示す
ように、螺旋状と格子状溝の組み合せで形成した。This polishing pad is attached to a surface plate with a double-sided tape to form a polishing pad.
m The formed 6-inch silicon wafer was fixed to the elastic film (backing film) of the polishing head with surface tension and polished under the following polishing conditions. Polishing conditions-Polishing pad rotation speed: 50 rpm-Polishing head rotation speed: 50 rpm-Oscillation distance: 30 mm-Oscillation frequency: 15 reciprocations / minute-Abrasives: Double dilution of Cabot SEMI Supers25 (silicon oxide slurry) Abrasive flow rate: 200 ml / min Load on the wafer: 460 g / cm 2 When the polishing rate of the wafer thus polished was measured, 200 nm / min was obtained. When the polished surface was inspected with a scratch inspection machine, no scratch was found. Comparative Example A polishing pad was manufactured under the same conditions as in Example 1 except for the groove structure. The groove structure was formed by a combination of spiral and lattice-shaped grooves as shown in the enlarged plan view of FIG.
【００２７】この研磨パッドを用い、実施例１と同じウ
ェハに対し、実施例１と全く同一条件で研磨した。この
ように研磨されたウェハを傷検査機で検査したところ、
研磨面に時々傷が見受けられた。研磨パッドに溝が交差
する角度が2 度未満の鋭角を有する部分があるためであ
る。 ［実施例２］更に実施例１と同一条件で作製した研磨パ
ッドで、実施例１と同じウェハに対し、研磨剤として酸
化セリウム粒子を５重量％含有するスラリーを用いる以
外は実施例１と同じ条件で研磨したところ、研磨レート
として４２０ｎｍ／分が得られた。研磨面を傷検査機で
検査したところ、傷は発見されなかった。 ［実施例３］図２に示す加重機構５１により研磨ヘッド
に段階的に加重することにより、図３（ｂ）に示すよう
に、ウェハへの荷重を０から４００g/cm2 まで約１０秒
かけて段階的に増加させた以外は、比較例１と同一研磨
パッド、同一ウェハ、同一研磨条件で研磨した。Using this polishing pad, the same wafer as in Example 1 was polished under exactly the same conditions as in Example 1. When the wafer polished in this way was inspected by a flaw inspection machine,
Scratches were occasionally found on the polished surface. This is because the polishing pad has a portion having an acute angle of less than 2 degrees at which the grooves intersect. [Example 2] Same as Example 1 except that a polishing pad prepared under the same conditions as in Example 1 was used, and a slurry containing 5% by weight of cerium oxide particles as an abrasive was used for the same wafer as in Example 1. Polishing under the conditions gave a polishing rate of 420 nm / min. When the polished surface was inspected with a scratch inspection machine, no scratch was found. [Embodiment 3] As shown in FIG. 3 (b), a load on the wafer is reduced from 0 to 400 g / cm 2 in about 10 seconds by gradually applying a load to the polishing head by the weight mechanism 51 shown in FIG. Polishing was performed under the same polishing pad, the same wafer, and the same polishing conditions as in Comparative Example 1 except that the amount was increased stepwise.
【００２８】このように研磨されたウェハを傷検査機で
検査したところ、傷は発見されなかった。更に、ウェハ
への荷重を０から４００g/cm2 まで約１０秒かけて段階
的に増加させる他、実施例１と同一研磨パッドを用い、
同一ウェハに対して、同一研磨条件で研磨した。When the wafer polished as described above was inspected by a flaw inspection machine, no flaw was found. Further, in addition to gradually increasing the load on the wafer from 0 to 400 g / cm 2 in about 10 seconds, using the same polishing pad as in Example 1,
The same wafer was polished under the same polishing conditions.
【００２９】このように研磨されたウェハを傷検査機で
検査したところ、傷は発見されなかった。以上のよう
に、段階的に加重を加えることによって、プラテン及び
研磨ヘッドの回転の負荷（トルク）が急増するのを防
ぎ、トルクは研磨初期からほぼ一定であった。When the wafer polished in this manner was inspected by a flaw inspection machine, no flaw was found. As described above, the stepwise application of the load prevented a sudden increase in the rotational load (torque) of the platen and the polishing head, and the torque was almost constant from the beginning of polishing.
【００３０】以上の実施の形態、実施例の説明では研磨
ヘッドへの加重を制御または段階的に変えて研磨した
が、相対的な圧力であることから、研磨体への荷重であ
っても本発明の効果は変わらないことは言うまでもな
い。In the above embodiments and examples, the polishing is performed by controlling or changing the load on the polishing head in a stepwise manner. It goes without saying that the effect of the invention does not change.
【００３１】[0031]
【発明の効果】以上の通り、本発明によれば、無発泡硬
質研磨パッドの溝構造の工夫により研磨時の傷の発生を
抑えることが可能となった。更に、無発泡の硬質研磨パ
ッドと酸化セリウムの組み合せにより傷の発生を更に低
減できるばかりでなく、酸化珪素スラリーを使って今ま
で達成できなかったような高い研磨レートが得られる効
果もある。更に、研磨時の圧力をトルクが一定になるよ
うに徐々に上げている為、研磨装置への負荷が少なくな
り、振動あるいは熱による影響が少なくなるばかりでな
く、硬い研磨パッドを用いた場合に生じやすい傷の発生
を低減できる優れた効果がある。更に、研磨時の圧力を
フィードバック制御することによって、研磨の間、終始
トルクが一定になるようにしているため、研磨装置への
負荷が更に少なくなり、振動あるいは熱による影響が更
に少なくなるばかりでなく、硬い研磨パッドを用いた場
合の傷を更に低減できる優れた効果がある。As described above, according to the present invention, generation of scratches during polishing can be suppressed by devising the groove structure of the non-foamed hard polishing pad. Further, the combination of a non-foamed hard polishing pad and cerium oxide not only can further reduce the occurrence of scratches, but also has the effect of using a silicon oxide slurry to obtain a high polishing rate that has not been achieved until now. Furthermore, since the pressure during polishing is gradually increased so that the torque is constant, the load on the polishing apparatus is reduced, and not only is the effect of vibration or heat reduced, but also when a hard polishing pad is used. There is an excellent effect that it is possible to reduce the occurrence of scratches that are likely to occur. Further, by controlling the pressure at the time of polishing by feedback control, during the polishing, the torque is always constant, so that the load on the polishing apparatus is further reduced, and the influence of vibration or heat is further reduced. In addition, there is an excellent effect that the scratches when a hard polishing pad is used can be further reduced.
【図１】本発明におけるＣＭＰ研磨装置の研磨パッドの
平面概念図である。FIG. 1 is a conceptual plan view of a polishing pad of a CMP polishing apparatus according to the present invention.
【図２】本発明のトルク検出機構を持った研磨装置の概
念図である。FIG. 2 is a conceptual diagram of a polishing apparatus having a torque detection mechanism according to the present invention.
【図３】本発明の実施形態３、実施例３に示したトルク
一定の段階加圧の状態を示す図である。FIG. 3 is a view showing a state of stepwise pressurization with a constant torque shown in Embodiment 3 and Example 3 of the present invention.
【図４】従来例のＣＭＰ装置の概念を示す図である。FIG. 4 is a diagram illustrating the concept of a conventional CMP apparatus.
【図５】本発明の実施例１〜３で用いた研磨パッドの溝
の断面形状を示す図である。FIG. 5 is a view showing a cross-sectional shape of a groove of a polishing pad used in Examples 1 to 3 of the present invention.
【図６】従来例の研磨パッドの、螺旋状溝と格子状溝と
を組み合わせた溝構造の部分的な平面拡大図を示す図で
ある。FIG. 6 is a partially enlarged plan view of a groove structure in which a spiral groove and a lattice groove are combined in a conventional polishing pad.
１ ＣＭＰ装置 ２ 研磨部材（研磨パッド） ３ 研磨ヘッド ４ ウェハ（研磨対象物） ５ 研磨剤供給部 ６ スラリー（研磨剤） ７ 定盤 １０ 研磨体 ２０ 定盤回転モータ ２１ トルク検出機構（定盤） ２５ 研磨パッド表面 ２６ 研磨パッド溝 ３０ 研磨ヘッド回転モータ ３１ トルク検出機構（研磨ヘッド） ４１ 負荷検出機構（揺動） ５１ 加重機構 ６１ 揺動機構 ７０ 螺旋状溝 ８０ 格子状溝 100 回転運動を示す 101 回転運動を示す DESCRIPTION OF SYMBOLS 1 CMP apparatus 2 Polishing member (polishing pad) 3 Polishing head 4 Wafer (object to be polished) 5 Abrasive supply part 6 Slurry (polishing agent) 7 Surface plate 10 Polishing body 20 Surface plate rotation motor 21 Torque detection mechanism (surface plate) Reference Signs List 25 polishing pad surface 26 polishing pad groove 30 polishing head rotation motor 31 torque detection mechanism (polishing head) 41 load detection mechanism (oscillation) 51 weighting mechanism 61 oscillation mechanism 70 spiral groove 80 lattice-shaped groove 100 indicating rotational movement 101 Show rotational movement
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松川 英二 東京都千代田区丸の内３丁目２番３号 株 式会社ニコン内 (72)発明者 宮地 章 東京都千代田区丸の内３丁目２番３号 株 式会社ニコン内 Ｆターム(参考） 3C058 AA07 AA09 AA12 BA06 BC01 BC02 BC03 CB02 CB03 CB10 DA02 DA17 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Eiji Matsukawa 3-2-3 Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (72) Inventor Akira Miyachi 3-2-2-3 Marunouchi, Chiyoda-ku, Tokyo Stock Company F term in Nikon Corporation (reference) 3C058 AA07 AA09 AA12 BA06 BC01 BC02 BC03 CB02 CB03 CB10 DA02 DA17
Claims (10)
材とを具え、前記研磨部材と前記研磨対象物との間に研
磨剤を介在させた状態で、前記研磨部材と前記研磨対象
物を相対移動させることにより、前記研磨対象物を研磨
する研磨装置に用いる研磨部材に於いて、前記研磨部材
が、少なくともその表面が無発泡の高分子重合体から成
り、前記表面に溝構造が設けられ、更に前記表面に鋭い
端部を有しないことを特徴とする研磨部材。A polishing head for holding an object to be polished; and a polishing member, wherein the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. By relative movement, in a polishing member used in a polishing apparatus for polishing the object to be polished, at least the surface of the polishing member is made of a non-foamed high molecular polymer, the groove structure is provided on the surface And a polishing member having no sharp edge on the surface.
溝から成り、前記交点に於ける溝が交差する角度が2 度
未満の鋭角を有しないことを特徴とする請求項１記載の
研磨部材。2. The structure according to claim 1, wherein said groove structure comprises a plurality of grooves having a plurality of intersections, and an angle at which the grooves intersect at said intersection does not have an acute angle of less than 2 degrees. Polishing member.
溝から成り、前記溝の部分に曲率半径５０μｍ未満の端
部を有しないことを特徴とする請求項１記載の研磨部
材。3. The polishing member according to claim 1, wherein said groove structure comprises a plurality of grooves having a plurality of intersections, and said groove portion has no end having a radius of curvature of less than 50 μm.
合わせ、または同心円状溝と放射状溝の組み合せ、また
は格子状溝の何れかから成ることを特徴とする請求項
１、２、３何れか１項記載の研磨部材。4. The groove structure according to claim 1, wherein said groove structure comprises a combination of a spiral groove and a radial groove, a combination of a concentric groove and a radial groove, or a lattice groove. The polishing member according to claim 1.
リル樹脂、ポリエステル樹脂、塩化ビニール樹脂、及び
ポリカーボネート樹脂の群から選ばれた何れか一つ以上
の樹脂であることを特徴とする請求項１〜４何れか１項
記載の研磨部材。5. The method according to claim 1, wherein the high molecular weight polymer is at least one resin selected from the group consisting of an epoxy resin, an acrylic resin, a polyester resin, a vinyl chloride resin, and a polycarbonate resin. The polishing member according to any one of claims 1 to 4.
ともその表面が無発泡の高分子重合体から成る研磨部材
とを用い、前記研磨部材と前記研磨対象物との間に研磨
剤を介在させた状態で、前記研磨部材と前記研磨対象物
を相対移動させることにより、前記研磨対象物を研磨す
る研磨方法に於いて、前記研磨剤が２００ｎｍ以下の粒
径の酸化セリウム粒子を含むことを特徴とする研磨方
法。6. A polishing head for holding an object to be polished and a polishing member at least whose surface is made of a non-foamed high molecular polymer, and an abrasive is interposed between the polishing member and the object to be polished. In the polishing method of polishing the object by relatively moving the polishing member and the object to be polished, the abrasive contains cerium oxide particles having a particle diameter of 200 nm or less. And polishing method.
記載の研磨部材であることを特徴とする請求項６記載の
研磨方法。7. The polishing method according to claim 6, wherein the polishing member is the polishing member according to any one of claims 1 to 5.
材とを用い、前記研磨部材と前記研磨対象物との間に研
磨剤を介在させた状態で、前記研磨部材と前記研磨対象
物を相対移動させることにより、前記研磨対象物を研磨
する研磨方法に於いて、前記研磨対象物と前記研磨部材
との間に加重を徐々に加える段階を有することを特徴と
する研磨方法。8. A polishing head and a polishing member for holding an object to be polished, and the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. A polishing method for polishing an object to be polished by relative movement, comprising a step of gradually applying a load between the object to be polished and the polishing member.
材とを具え、前記研磨部材と前記研磨対象物との間に研
磨剤を介在させた状態で、前記研磨部材と前記研磨対象
物を相対移動させることにより、前記研磨対象物を研磨
する研磨装置に於いて、前記研磨対象物と前記研磨部材
との間に可変の荷重を与える加重機構と、研磨部材を移
動する研磨部材移動機構と、研磨対象物を移動する研磨
対象物移動機構と、前記研磨部材移動機構と前記研磨対
象物移動機構の片方または両方の移動の負荷を検出する
ためのそれぞれの負荷検出機構と、前記どちらか一方の
負荷検出機構によって検出される負荷の値をもとに前記
加重機構が与える加重を制御するためのフィードバック
機構とを具えることを特徴とする研磨装置。9. A polishing head comprising a polishing head for holding an object to be polished and a polishing member, wherein the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. By relative movement, in a polishing apparatus for polishing the object to be polished, a weighting mechanism that applies a variable load between the object to be polished and the polishing member, a polishing member moving mechanism that moves the polishing member, A polishing target moving mechanism that moves the polishing target, a load detection mechanism for detecting a load of one or both of the polishing member moving mechanism and the polishing target moving mechanism, and either one of the above. And a feedback mechanism for controlling the weight given by the weighting mechanism based on the value of the load detected by the load detection mechanism.
部材とを用い、前記研磨部材と前記研磨対象物との間に
研磨剤を介在させた状態で、前記研磨部材と前記研磨対
象物を相対移動させることにより、前記研磨対象物を研
磨する研磨方法に於いて、前記研磨対象物または前記研
磨部材の移動負荷が一定になるよう前記研磨対象物と前
記研磨部材との間の荷重を調節する段階を有することを
特徴とする研磨方法。10. A polishing head and a polishing member for holding an object to be polished, and the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. In the polishing method for polishing the polishing target by relative movement, the load between the polishing target and the polishing member is adjusted so that the moving load of the polishing target or the polishing member is constant. A polishing method, comprising the steps of:
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8815799A JP2000286218A (en) | 1999-03-30 | 1999-03-30 | Polishing member, polishing equipment and polishing method |
| US09/856,272 US6749714B1 (en) | 1999-03-30 | 2000-03-14 | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| CNB200310117928XA CN1312742C (en) | 1999-03-30 | 2000-03-14 | Polishing disk, polishing machine and method for manufacturing semiconductor |
| PCT/JP2000/001544 WO2000059680A1 (en) | 1999-03-30 | 2000-03-14 | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| EP00908066A EP1211023B1 (en) | 1999-03-30 | 2000-03-14 | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| KR10-2001-7011397A KR100471527B1 (en) | 1999-03-30 | 2000-03-14 | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| CN00805734A CN1345264A (en) | 1999-03-30 | 2000-03-14 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| DE60039054T DE60039054D1 (en) | 1999-03-30 | 2000-03-14 | GT POLISHING BODY, POLISHING DEVICE, POLISHING METHOD AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE (2002/23) |
| TW090123178A TW530348B (en) | 1999-03-30 | 2000-03-23 | Polishing body, polishing device, polishing method and method for producing semiconductor device |
| TW089105310A TW511174B (en) | 1999-03-30 | 2000-03-23 | Polishing body, polishing method, polishing apparatus, and manufacturing method semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8815799A JP2000286218A (en) | 1999-03-30 | 1999-03-30 | Polishing member, polishing equipment and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000286218A true JP2000286218A (en) | 2000-10-13 |
Family
ID=13935100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8815799A Pending JP2000286218A (en) | 1999-03-30 | 1999-03-30 | Polishing member, polishing equipment and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000286218A (en) |
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|---|---|---|---|---|
| JP2006005339A (en) * | 2004-05-20 | 2006-01-05 | Jsr Corp | Chemical mechanical polishing pad and method |
| JP2006278977A (en) * | 2005-03-30 | 2006-10-12 | Fujitsu Ltd | Manufacturing method of semiconductor device and polishing method |
| JP2007012936A (en) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | Chemical mechanical polishing method of organic film, manufacturing method of semiconductor device, and program |
| JP2007081322A (en) * | 2005-09-16 | 2007-03-29 | Jsr Corp | Method for manufacturing chemical-mechanical polishing pad |
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| WO2013039203A1 (en) * | 2011-09-16 | 2013-03-21 | 東レ株式会社 | Polishing pad |
| JP2018167370A (en) * | 2017-03-30 | 2018-11-01 | 富士紡ホールディングス株式会社 | Polishing pad |
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-
1999
- 1999-03-30 JP JP8815799A patent/JP2000286218A/en active Pending
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|---|---|---|---|---|
| US7591713B2 (en) | 2003-09-26 | 2009-09-22 | Shin-Etsu Handotai Co., Ltd. | Polishing pad, method for processing polishing pad, and method for producing substrate using it |
| US7677957B2 (en) | 2003-09-26 | 2010-03-16 | Shin-Etsu Handotai Co., Ltd. | Polishing apparatus, method for providing and mounting a polishing pad in a polishing apparatus, and method for producing a substrate using the polishing apparatus |
| JP4645825B2 (en) * | 2004-05-20 | 2011-03-09 | Ｊｓｒ株式会社 | Chemical mechanical polishing pad and chemical mechanical polishing method |
| JP2006005339A (en) * | 2004-05-20 | 2006-01-05 | Jsr Corp | Chemical mechanical polishing pad and method |
| JP2006278977A (en) * | 2005-03-30 | 2006-10-12 | Fujitsu Ltd | Manufacturing method of semiconductor device and polishing method |
| US7597606B2 (en) | 2005-03-30 | 2009-10-06 | Fujitsu Microelectronics Limited | Fabrication process of semiconductor device and polishing method |
| JP2007012936A (en) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | Chemical mechanical polishing method of organic film, manufacturing method of semiconductor device, and program |
| KR101248641B1 (en) * | 2005-09-16 | 2013-03-28 | 제이에스알 가부시끼가이샤 | Method of manufacturing chemical mechanical polishing pad |
| JP2007081322A (en) * | 2005-09-16 | 2007-03-29 | Jsr Corp | Method for manufacturing chemical-mechanical polishing pad |
| JP2011177884A (en) * | 2010-02-05 | 2011-09-15 | Kuraray Co Ltd | Polishing pad |
| WO2012111502A1 (en) * | 2011-02-15 | 2012-08-23 | 東レ株式会社 | Polishing pad |
| JPWO2012111502A1 (en) * | 2011-02-15 | 2014-07-03 | 東レ株式会社 | Polishing pad |
| WO2013039181A1 (en) * | 2011-09-15 | 2013-03-21 | 東レ株式会社 | Polishing pad |
| WO2013039203A1 (en) * | 2011-09-16 | 2013-03-21 | 東レ株式会社 | Polishing pad |
| JP2018167370A (en) * | 2017-03-30 | 2018-11-01 | 富士紡ホールディングス株式会社 | Polishing pad |
| JP6989752B2 (en) | 2017-03-30 | 2022-02-03 | 富士紡ホールディングス株式会社 | Abrasive pad |
| US11833635B2 (en) | 2019-02-19 | 2023-12-05 | Panasonic Intellectual Property Management Co., Ltd. | Polishing system, learning device, and learning method of learning device |
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