JP2000277644A - Manufacture of optical semiconductor element housing package - Google Patents

Manufacture of optical semiconductor element housing package

Info

Publication number
JP2000277644A
JP2000277644A JP11080524A JP8052499A JP2000277644A JP 2000277644 A JP2000277644 A JP 2000277644A JP 11080524 A JP11080524 A JP 11080524A JP 8052499 A JP8052499 A JP 8052499A JP 2000277644 A JP2000277644 A JP 2000277644A
Authority
JP
Japan
Prior art keywords
fixing member
metal fixing
plating layer
base
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11080524A
Other languages
Japanese (ja)
Other versions
JP3715818B2 (en
Inventor
Takashi Sawai
隆 澤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP08052499A priority Critical patent/JP3715818B2/en
Priority to US09/535,288 priority patent/US6420205B1/en
Publication of JP2000277644A publication Critical patent/JP2000277644A/en
Application granted granted Critical
Publication of JP3715818B2 publication Critical patent/JP3715818B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PROBLEM TO BE SOLVED: To enhance a brazing material in bonding strength to a metal fixing member and to improve a gold plating layer in wettability to the brazing material so as to mount the metal fixing member firmly on a base body by brazing, by a method wherein the exposed surface of a glass through which a light transmitting member is fixed inside the metal fixing member is covered with a protective film. SOLUTION: A light transmitting member 9 is fixed inside a metal fixing member 8 through the intermediary of a glass 14 so as to stop up the inside of the metal fixing member 8. Then, the exposure surface of the glass 14 which fixes the light transmitting member 9 to the metal fixing member 8 is coated with a protective film P. A nickel plating layer 12 and a gold plating layer 13 are successively deposited on the surface of the cylindrical metal fixing member 8 so as to surely and firmly fix the cylindrical metal fixing member 8 to a base body 1. The metal fixing member 8 is fixed by brazing to a metal layer previously deposited around a through-hole 1b bored in the metal fixing member 8. By this setup, the nickel plating layer 12 is prevented from being partially diffused into the surface of the gold plating layer 13 and exposed to light for the formation of a nickel oxide layer.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光半導体素子を収容
するための光半導体素子収納用パッケージに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

【0002】[0002]

【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、一般に酸化アルミニウ
ム質焼結体等のセラミックス材から成り、上面に光半導
体素子を収容するための凹部を有する基体と、該基体の
側部に形成された貫通孔と、前記基体の貫通孔周辺の外
表面にロウ付け取着され、内部に光信号が伝達される空
間を有する鉄ーニッケル合金(鉄:50重量%、ニッケ
ル:50重量%)等の金属材料から成る筒状の固定部材
と、前記筒状固定部材の内部にガラスを介して取着され
た筒状固定部材の内部を塞ぐ透光性部材と、前記基体の
凹部内側から外表面にかけて被着導出されているタング
ステンやモリブデン、マンガン等から成り、光半導体素
子の電極がボンディングワイヤ等の電気的接続手段を介
して接続される複数個の配線導体層と、前記基体の上面
に取着され、前記凹部を塞ぐ蓋体とから構成されてお
り、前記基体の凹部内に光半導体素子をガラス、樹脂、
ロウ材等の接着剤を介して接着固定するとともに該光半
導体素子の各電極をボンディングワイヤ等の電気的接続
手段を介して配線導体層に電気的に接続し、しかる後、
前記基体の上面に蓋体をガラス、樹脂、ロウ材等から成
る封止材を介して接合させ、基体と蓋体とから成る容器
内部に光半導体素子を気密に収容するとともに筒状固定
部材に光ファイバー部材をYAG等のレーザー光線を使
用して溶接接続させることによって製品としての光半導
体装置となる。
2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element is generally made of a ceramic material such as an aluminum oxide sintered body and has a concave portion for housing the optical semiconductor element on an upper surface. An iron-nickel alloy (iron: 50) which has a base, a through hole formed in a side portion of the base, and a space which is brazed and attached to an outer surface around the through hole of the base and has a space for transmitting an optical signal therein. (Weight%, nickel: 50% by weight) or the like, and a translucent member for closing the inside of the cylindrical fixing member attached to the inside of the cylindrical fixing member via glass. And tungsten, molybdenum, manganese, etc., which are attached and led from the inside of the concave portion to the outer surface of the base, and the electrodes of the optical semiconductor element are connected via electrical connection means such as bonding wires. Pieces of the wiring conductor layer, is attached to the upper surface of the substrate, are composed of a lid for closing said recess, glass optical semiconductor elements in a recess of the base body resin,
Each electrode of the optical semiconductor element is electrically connected to a wiring conductor layer via an electrical connection means such as a bonding wire while being fixedly adhered through an adhesive such as a brazing material, and thereafter,
A lid is bonded to the upper surface of the base via a sealing material made of glass, resin, brazing material, or the like, and the optical semiconductor element is hermetically accommodated inside a container formed of the base and the lid, and is attached to the cylindrical fixing member. An optical semiconductor device as a product is obtained by welding and connecting the optical fiber member using a laser beam such as YAG.

【0003】かかる光半導体装置は外部電気回路から供
給される駆動信号に基づいて光半導体素子に所定の光励
起を起こさせ、該励起した光を透光性部材を介し光ファ
イバー部材に授受させるとともに該光ファイバー部材の
光ファイバー内を伝達させることによって高速通信等に
使用される。
In such an optical semiconductor device, a predetermined optical excitation is caused in an optical semiconductor element based on a drive signal supplied from an external electric circuit, and the excited light is transmitted to and received from an optical fiber member through a light transmitting member. It is used for high-speed communication and the like by transmitting the light through the optical fiber of the member.

【0004】また上述の光半導体素子収納用パッケージ
は、筒状固定部材の基体へのロウ付け取着が下記の方法
によって行われている。即ち、 (1)まず筒状固定部材の表面に、基体へのロウ付け取
着を確実、強固とするためにニッケルめっき層及び金め
っき層を順次被着させる。
In the above-mentioned package for housing an optical semiconductor element, the cylindrical fixing member is brazed to the base by the following method. That is, (1) First, a nickel plating layer and a gold plating layer are sequentially applied on the surface of the cylindrical fixing member in order to securely and firmly attach to the base by brazing.

【0005】前記ニッケルめっき層は筒状固定部材への
金めっき層の被着を強固とするための下地部材であり、
電解めっき法や無電解めっき法を採用することによって
筒状固定部材の外表面に約0.5〜5μmの厚みに被着
される。
The nickel plating layer is a base member for firmly attaching the gold plating layer to the cylindrical fixing member,
By adopting the electrolytic plating method or the electroless plating method, it is attached to the outer surface of the cylindrical fixing member to a thickness of about 0.5 to 5 μm.

【0006】また前記金めっき層は筒状固定部材に対す
るロウ材の濡れ性を良好とする作用をなし、電解めっき
法や無電解めっき法を採用することによってニッケルめ
っき層上に約1〜3μmの厚みに被着される。
The gold plating layer has an effect of improving the wettability of the brazing material to the cylindrical fixing member, and is formed on the nickel plating layer by an electrolytic plating method or an electroless plating method. Deposited in thickness.

【0007】(2)次に前記筒状固定部材の内部に透光
性部材をガラスを介して取着し、筒状固定部材の内部を
塞ぐ。
(2) Next, a translucent member is attached to the inside of the cylindrical fixing member via glass, and the inside of the cylindrical fixing member is closed.

【0008】前記筒状固定部材への透光性部材の取着は
筒状固定部材の内部に透光性部材の融点より低い融点を
有する、例えば、低融点ハンダガラスを塗布するととも
に該塗布した低融点ハンダガラス上に透光性部材を載置
し、しかる後、これを大気中、約450℃の温度に加熱
し、低融点ガラスを溶融させることによって行われる。
The light-transmitting member is attached to the cylindrical fixing member by applying a low-melting point solder glass having a melting point lower than the melting point of the light-transmitting member, for example, to the inside of the cylindrical fixing member. This is performed by placing a light-transmissive member on low-melting-point solder glass and then heating it to a temperature of about 450 ° C. in air to melt the low-melting-point glass.

【0009】(3)そして最後に前記基体の貫通孔周辺
の外表面に金―錫合金等からなる低融点ロウ材を介して
筒状固定部材をロウ付け取着し、これによって製品とし
ての光半導体素子収納用パッケージが完成する。
(3) Finally, a cylindrical fixing member is brazed and attached to the outer surface of the substrate around the through hole through a low melting point brazing material made of a gold-tin alloy or the like. The package for housing the semiconductor element is completed.

【0010】前記基体への筒状固定部材のロウ付けは基
体の貫通孔周辺の外表面に筒状固定部材を、間に金―錫
合金(金:80重量%、錫:20重量%)等からなる低
融点ロウ材を挟んで載置し、しかる後、これを約300
℃の温度に加熱し、低融点ロウ材を溶融させることによ
って行われる。
[0010] The cylindrical fixing member is brazed to the base by mounting the cylindrical fixing member on the outer surface around the through-hole of the base, with a gold-tin alloy (gold: 80% by weight, tin: 20% by weight) or the like. Is placed with a low melting point brazing material consisting of
It is performed by heating to a temperature of ° C. to melt the low melting point brazing material.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージの製造方法において
は、筒状固定部材の内部に透光性部材をガラスを介して
取着させる際、ガラス付けの熱及び雰囲気によって筒状
固定部材の外表面に被着されているニッケルめっき層の
一部が金めっき層中を拡散するとともに金めっき層表面
に露出し、これが酸化されて金めっき層表面に酸化ニッ
ケルが多量に形成されていまい、その結果、前記酸化ニ
ッケルはロウ材との濡れ性が悪いことから筒状固定部材
に対するロウ材の接合強度が大幅に低下し、基体に筒状
固定部材を強固にロウ付け取着することができないとい
う欠点を有していた。
However, in this conventional method of manufacturing a package for housing an optical semiconductor element, when a light-transmitting member is attached to the inside of a cylindrical fixing member via glass, the glass is attached. Due to heat and atmosphere, part of the nickel plating layer adhered to the outer surface of the cylindrical fixing member diffuses in the gold plating layer and is exposed on the gold plating layer surface, and is oxidized and oxidized on the gold plating layer surface. A large amount of nickel may be formed. As a result, since the nickel oxide has poor wettability with the brazing material, the joining strength of the brazing material to the cylindrical fixing member is significantly reduced, and the cylindrical fixing member is firmly attached to the base. Has the disadvantage that it cannot be brazed and attached.

【0012】そこで上記欠点を解消するために筒状固定
部材の内部に透光性部材をガラスを介して取着させた後
に筒状固定部材の表面にニッケルめっき層及び金めっき
層を順次被着させることが考えられる。
In order to solve the above-mentioned drawback, a translucent member is attached to the inside of the cylindrical fixing member via glass, and then a nickel plating layer and a gold plating layer are sequentially deposited on the surface of the cylindrical fixing member. It is possible to make it.

【0013】しかしながら、前記筒状固定部材の内部に
透光性部材を取着させるガラスは低融点ハンダガラスで
あり、該低融点ハンダガラスは耐薬品性に劣ることから
筒状固定部材の内部に透光性部材をガラスを介して取着
させた後、筒状固定部材の表面にニッケルめっき層及び
金めっき層を被着させるとガラスがめっき液の薬品によ
って溶け、その結果、透光性部材が筒状固定部材より外
れてしまうという欠点が誘発される。
However, the glass for attaching the translucent member inside the cylindrical fixing member is a low melting point solder glass, and since the low melting point solder glass is inferior in chemical resistance, the glass is fixed inside the cylindrical fixing member. After attaching the translucent member via the glass, and then applying a nickel plating layer and a gold plating layer on the surface of the cylindrical fixing member, the glass is melted by the chemical of the plating solution, and as a result, the translucent member Is detached from the cylindrical fixing member.

【0014】本発明は上記欠点に鑑み案出されたもの
で、その目的は基体に筒状固定部材を強固にロウ付け取
着し、信頼性を極めて高いものとなした光半導体素子収
納用パッケージの製造方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to provide a highly reliable optical semiconductor device housing package in which a cylindrical fixing member is firmly brazed and attached to a base. It is to provide a manufacturing method of.

【0015】[0015]

【課題を解決するための手段】本発明は、上面に光半導
体素子を収容するための凹部を有する基体と、該基体の
側部に形成された貫通孔と、前記基体の貫通孔周辺の外
表面にロウ付けされ、一端に光ファイバー部材が接続さ
れる筒状の金属製固定部材と、前記筒状の金属製固定部
材の内部に取着され、金属製固定部材の内部を塞ぐ透光
性部材と、前記基体の上面に取着され、前記凹部を塞ぐ
蓋体とから成る光半導体素子収納用パッケージであっ
て、前記筒状の金属製固定部材が下記(a)乃至(d)
の工程によって基体の貫通孔周辺の外表面にロウ付けさ
れていることを特徴とするものである。
According to the present invention, there is provided a base having a concave portion for accommodating an optical semiconductor element on an upper surface, a through hole formed in a side portion of the base, and an outer portion around the through hole of the base. A cylindrical metal fixing member brazed to the surface and having one end connected to an optical fiber member; and a translucent member attached to the inside of the cylindrical metal fixing member and closing the inside of the metal fixing member. And a lid attached to the upper surface of the base and closing the recess, wherein the cylindrical metal fixing member is formed of the following (a) to (d).
Is brazed to the outer surface around the through-hole of the substrate by the step of.

【0016】(a)金属製固定部材の内部に透光性部材
をガラスを介して取着する工程と、(b)前記ガラスの
露出面を保護膜で被覆する工程と、(c)筒状の金属製
固定部材の露出表面にニッケルめっき層と金めっき層を
順次被着させる工程と、(d)金属製固定部材を基体の
貫通孔周辺の外表面にロウ材を介してロウ付け取着する
工程。
(A) attaching a translucent member to the inside of the metal fixing member via glass; (b) covering the exposed surface of the glass with a protective film; (C) sequentially depositing a nickel plating layer and a gold plating layer on the exposed surface of the metal fixing member, and (d) brazing the metal fixing member to the outer surface around the through hole of the base via a brazing material. Process.

【0017】本発明の光半導体素子収納用パッケージの
製造方法によれば、金属製固定部材の内部に透光性部材
を取着しているガラスの露出表面を保護膜で被覆したこ
とから透光性部材がガラスを介して取着されている金属
製固定部材の表面にニッケルめっき層及び金めっき層を
順次被着させたとしてもガラスは前記保護膜により保護
されていることからめっき液の薬品によって溶けること
はなく、また金属製固定部材の内部に透光性部材を取着
した後に金属製固定部材の表面にニッケルめっき層及び
金めっき層を被着させたことから金めっき層表面にニッ
ケルめっき層の一部が拡散露出し、これが酸化されて酸
化ニッケルを形成することはなく、その結果、金属製固
定部材への透光性部材の取着強度が強固となり、かつ金
めっき層のロウ材に対する濡れ性が良好となって、透光
性部材が取着されている筒状の金属製固定部材を基体に
極めて強固にロウ付け取着することが可能となる。
According to the method of manufacturing a package for housing an optical semiconductor element of the present invention, the exposed surface of the glass having the light-transmitting member attached inside the metal fixing member is covered with the protective film. Even if a nickel plating layer and a gold plating layer are sequentially applied to the surface of a metal fixing member to which a conductive member is attached via glass, the glass is protected by the protective film. After the translucent member was attached to the inside of the metal fixing member, the nickel plating layer and the gold plating layer were applied to the surface of the metal fixing member. A portion of the plating layer is diffused and exposed, and is not oxidized to form nickel oxide. As a result, the strength of the light-transmitting member attached to the metal fixing member is increased, and the brazing of the gold plating layer is performed. Lumber Against becoming wettability improved, it is possible to very firmly brazed attaching a cylindrical metal securing member translucent member is attached to the substrate.

【0018】[0018]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1乃至図4は本発明の製造方法によ
って作製された光半導体素子収納用パッケージの一実施
例を示し、1は基体、2は蓋体である。この基体1と蓋
体2とで内部に光半導体素子3を収容するための容器が
構成される。
Next, the present invention will be described in detail with reference to the accompanying drawings. 1 to 4 show an embodiment of an optical semiconductor element housing package manufactured by the manufacturing method of the present invention, wherein 1 is a base, and 2 is a lid. The base 1 and the lid 2 constitute a container for housing the optical semiconductor element 3 therein.

【0019】前記基体1はその上面に光半導体素子3を
収容するための空所を形成する凹部1aが設けてあり、
該凹部1a底面には光半導体素子3が搭載固定される。
The base 1 is provided on its upper surface with a concave portion 1a forming a space for accommodating the optical semiconductor element 3,
The optical semiconductor element 3 is mounted and fixed on the bottom surface of the concave portion 1a.

【0020】前記基体1は、例えば、酸化アルミニウム
質焼結体等のセラミックスより成り、酸化アルミニウ
ム、酸化珪素、酸化マグネシウム、酸化カルシウム等の
原料粉末に適当な有機バインダー、溶剤等を添加混合し
て泥漿物を作るとともに、該泥漿物をドクターブレード
法やカレンダーロール法を採用することによってセラミ
ックグリーンシート(セラミック生シート)となし、し
かる後、前記セラミックグリーンシートに適当な打ち抜
き加工を施すとともにこれを複数枚積層し、約1500
℃の温度で焼成することによって製作される。
The base 1 is made of, for example, ceramics such as an aluminum oxide sintered body, and is mixed with a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide by adding an appropriate organic binder, a solvent, and the like. The slurry is made into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method or a calender roll method, and then the ceramic green sheet is subjected to an appropriate punching process, and then the slurry is formed. Laminate multiple sheets, about 1500
It is manufactured by firing at a temperature of ° C.

【0021】また前記基体1は凹部1aの内面から基体
1の外側面にかけて複数個の配線層4が被着形成されて
おり、該配線層4の凹部1a内に露出する領域には光半
導体素子3の各電極がボンディングワイヤ5を介して電
気的に接続され、また基体1の外側面に形成されている
領域には外部電気回路と接続される外部リード端子6が
銀ロウ等のロウ材を介してロウ付け取着されている。
A plurality of wiring layers 4 are formed on the substrate 1 from the inner surface of the concave portion 1a to the outer surface of the substrate 1, and a region of the wiring layer 4 exposed in the concave portion 1a has an optical semiconductor element. 3 are electrically connected to each other through bonding wires 5, and external lead terminals 6 connected to an external electric circuit are made of a brazing material such as silver brazing in a region formed on the outer surface of the base 1. It is attached via brazing.

【0022】前記配線層4は光半導体素子3の各電極を
外部電気回路に接続する際の導電路として作用し、タン
グステンやモリブデン、マンガン等の高融点金属粉末に
より形成されている。
The wiring layer 4 functions as a conductive path for connecting each electrode of the optical semiconductor element 3 to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum, and manganese.

【0023】前記配線層4は、例えば、タングステンや
モリブデン、マンガン等の高融点金属粉末に適当な有機
バインダー、溶剤等を添加混合して得た金属ペーストを
基体1となるセラミックグリーンシートに予め従来周知
のスクリーン印刷法により所定パターンに印刷塗布して
おくことによって基体1の凹部1a内から基体1の外側
面にかけて被着形成される。
The wiring layer 4 is formed by adding a metal paste obtained by adding a suitable organic binder, a solvent, and the like to a high melting point metal powder such as tungsten, molybdenum, manganese, or the like to a ceramic green sheet serving as the base 1 beforehand. By printing and applying a predetermined pattern by a well-known screen printing method, the coating is formed from the inside of the concave portion 1 a of the base 1 to the outer surface of the base 1.

【0024】また前記配線層4はその露出する表面にニ
ッケル、金等の耐蝕性に優れ、かつロウ材との濡れ性に
優れる金属を1μm乃至20μmの厚みにメッキ法によ
り被着させておくと、配線層4の酸化腐蝕を有効に防止
することができるとともに配線層4への外部リード端子
6のロウ付けを強固となすことができる。従って、前記
配線層4はその露出する表面にニッケル、金等の耐蝕性
に優れ、かつロウ材との濡れ性に優れる金属を1μm乃
至20μmの厚みに被着させておくことが好ましい。
The wiring layer 4 is preferably provided with a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by a plating method on the exposed surface. In addition, the oxidation corrosion of the wiring layer 4 can be effectively prevented, and the brazing of the external lead terminals 6 to the wiring layer 4 can be firmly performed. Therefore, it is preferable that a metal having excellent corrosion resistance, such as nickel and gold, and excellent in wettability with a brazing material is applied to the exposed surface of the wiring layer 4 to a thickness of 1 μm to 20 μm.

【0025】更に前記配線層4には外部リード端子6が
銀ロウ等のロウ材を介してロウ付け取着されており、該
外部リード端子6は容器内部に収容する光半導体素子3
の各電極を外部電気回路に電気的に接続する作用をな
し、外部リード端子6を外部電気回路に接続することに
よって容器内部に収容される光半導体素子3は配線層4
及び外部リード端子6を介して外部電気回路に接続され
ることとなる。
Further, an external lead terminal 6 is attached to the wiring layer 4 by brazing via a brazing material such as silver brazing, and the external lead terminal 6 is connected to the optical semiconductor element 3 contained in the container.
The optical semiconductor element 3 accommodated in the container by connecting the external lead terminals 6 to the external electric circuit is electrically connected to the external electric circuit.
And the external lead terminal 6 is connected to an external electric circuit.

【0026】前記外部リード端子6は鉄ーニッケルーコ
バルト合金や鉄ーニッケル合金等の金属材料からなり、
例えば、鉄ーニッケルーコバルト合金等の金属材料から
成るインゴット(塊)に圧延加工法や打ち抜き加工法
等、従来周知の金属加工法を施すことによって所定の形
状に形成される。
The external lead terminal 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot made of a metal material such as an iron-nickel-cobalt alloy is formed into a predetermined shape by applying a conventionally known metal working method such as a rolling method or a punching method.

【0027】前記外部リード端子6はまたその露出する
表面にニッケル、金等の耐蝕性に優れ、かつロウ材との
濡れ性に優れる金属を1μm乃至20μmの厚みにメッ
キ法により被着させておくと、外部リード端子6の酸化
腐蝕を有効に防止することができるとともに外部リード
端子6を外部電気回路に接続する際、その接続を確実、
強固となすことができる。従って、前記外部リード端子
6はその露出する表面にニッケル、金等の耐蝕性に優
れ、かつロウ材との濡れ性に優れる金属を1μm乃至2
0μmの厚みに被着させておくことが好ましい。
The external lead terminal 6 is coated with a metal having excellent corrosion resistance and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by a plating method on the exposed surface thereof. In addition, when the external lead terminal 6 is connected to an external electric circuit, the connection can be reliably prevented.
It can be made strong. Therefore, the external lead terminal 6 is made of a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material of 1 μm to 2 μm on the exposed surface.
Preferably, it is applied to a thickness of 0 μm.

【0028】前記外部リード端子6が取着された基体1
はまたその側部に貫通孔1bが形成されており、貫通孔
1bには筒状の金属製固定部材8が挿入固定され、更に
金属製固定部材8の内側の一部には透光性部材9が取着
されている。
The base 1 on which the external lead terminals 6 are attached
Further, a through hole 1b is formed in a side portion thereof. A cylindrical metal fixing member 8 is inserted and fixed in the through hole 1b, and a translucent member is further provided in a part of the inside of the metal fixing member 8. 9 is attached.

【0029】前記基体1の側部に形成されている貫通孔
1bは、例えば、基体1となるセラミッググリーンシー
トに予め打ち抜き加工法により孔を形成しておくことに
よって、或いは基体1の側部に孔あけ加工を施すことに
よって基体1の側部に所定形状に形成される。
The through-hole 1b formed in the side of the base 1 may be formed, for example, by forming a hole in a ceramic green sheet to be the base 1 in advance by a punching method, or Is formed into a predetermined shape on the side portion of the base 1 by performing a drilling process.

【0030】また前記基体1の外側面で貫通孔1bの周
辺には筒状の金属製固定部材8が取着されており、該金
属製固定部材8は、光ファイバー部材11を基体1に固
定する際の下地固定部材として作用するとともに光半導
体素子3が励起した光を光ファイバー部材11に伝達さ
せる作用をなし、鉄ーニッケルーコバルト合金や鉄ーニ
ッケル合金等の金属材料で形成されている。
A cylindrical metal fixing member 8 is attached to the outer surface of the base 1 around the through hole 1b, and the metal fixing member 8 fixes the optical fiber member 11 to the base 1. It functions as a base fixing member at the time and transmits light excited by the optical semiconductor element 3 to the optical fiber member 11, and is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.

【0031】なお、前記金属製固定部材8は、例えば、
鉄ーニッケルーコバルト合金等のインゴット(塊)をプ
レス加工により筒状とすることによって形成される。
The metal fixing member 8 is, for example,
It is formed by forming an ingot (lump) such as an iron-nickel-cobalt alloy into a tubular shape by press working.

【0032】また前記金属製固定部材8の基体1外側面
への取着は、基体1の外側面で貫通孔1bの周辺に予め
タングステンやモリブデン等からなる金属層を被着させ
ておき、該金属層に筒状の金属製固定部材8に設けたフ
ランジをロウ付けすることによって行われる。
In attaching the metal fixing member 8 to the outer surface of the base 1, a metal layer made of tungsten, molybdenum, or the like is previously applied to the outer surface of the base 1 around the through hole 1b. This is performed by brazing a flange provided on the cylindrical metal fixing member 8 to the metal layer.

【0033】更に前記筒状の金属製固定部材8は、その
内側の一部に透光性部材9が取着されており、該透光性
部材9は金属製固定部材8の内側を塞ぎ、基体1と蓋体
2とからなる容器の気密封止を保持させるとともに金属
製固定部材8の内部空間を伝達する光半導体素子3の励
起した光をそのまま金属製固定部材8に取着接続される
光ファイバー部材11に伝達させる作用をなす。
Further, a light-transmitting member 9 is attached to a part of the inside of the cylindrical metal fixing member 8, and the light-transmitting member 9 closes the inside of the metal fixing member 8. Light excited by the optical semiconductor element 3 that transmits the internal space of the metal fixing member 8 is attached and connected to the metal fixing member 8 as it is while maintaining the hermetic sealing of the container including the base 1 and the lid 2. It functions to transmit the light to the optical fiber member 11.

【0034】前記透光性部材9は、例えば、酸化珪素、
酸化鉛を主成分とした鉛系及びホウ酸、ケイ砂を主成分
としたホウケイ酸系の非晶質ガラスで形成されており、
該非晶質ガラスは結晶軸が存在しないことから光半導体
素子3の励起する光を透光性部材9を通過させて光ファ
イバー部材11に授受させる場合、光半導体素子3の励
起した光は透光性部材9で複屈折を起こすことはなくそ
のまま光ファイバー部材11に授受されることとなり、
その結果、光半導体素子3が励起した光の光ファイバー
部材11への授受が高効率となって光信号の伝送効率を
高いものとなすことができる。
The light transmitting member 9 is made of, for example, silicon oxide,
It is made of lead-based and boric acid containing lead oxide as a main component, and borosilicate-based amorphous glass containing silica sand as a main component.
Since the amorphous glass has no crystal axis, the light excited by the optical semiconductor element 3 is transmitted and received by the optical fiber member 11 through the light transmitting member 9. The birefringence does not occur in the member 9 and is transmitted and received to the optical fiber member 11 as it is,
As a result, the transmission and reception of the light excited by the optical semiconductor element 3 to and from the optical fiber member 11 becomes high, and the transmission efficiency of the optical signal can be made high.

【0035】前記筒状の金属製固定部材8は更にその外
側の一端に光ファイバー部材11に取着されているフラ
ンジがYAG等のレーザー光線を使用して溶接され、こ
れによって光半導体素子3に光信号を伝達するための光
ファイバー部材11が基体1に固定されることとなる。
The flange fixed to the optical fiber member 11 is welded to the outer end of the cylindrical metal fixing member 8 using a laser beam such as YAG. The optical fiber member 11 for transmitting the light is fixed to the base 1.

【0036】また更に前記基体1の上面には、例えば、
鉄ーニッケルーコバルト合金や鉄ーニッケル合金等の金
属材料から成る蓋体2が接合され、これによって基体1
と蓋体2とからなる容器の内部に光半導体素子3が気密
に封止されることとなる。
Further, on the upper surface of the substrate 1, for example,
A lid 2 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined, and
The optical semiconductor element 3 is hermetically sealed inside a container formed of the cover 2 and the cover 2.

【0037】前記蓋体2は、例えば、鉄ーニッケルーコ
バルト合金等のインゴット(塊)に圧延加工法や打ち抜
き加工法等、従来周知の金属加工法を施すことによって
所定の形状に形成される。
The lid 2 is formed in a predetermined shape by subjecting an ingot such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method. .

【0038】かくして本発明の光半導体素子収納用パッ
ケージによれば、基体1の凹部1aに光半導体素子3を
載置固定するとともに光半導体素子3の各電極をボンデ
イングワイヤ5を介して配線層4に電気的に接続し、次
に基体1の上面に蓋体2を接合させ、基体1と蓋体2と
から成る容器内部に光半導体素子3を収容し、最後に基
体1に取着させた筒状の金属製固定部材8に光ファイバ
ー部材11を取着接続させることによって最終製品とし
ての光半導体装置となる。
Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 3 is placed and fixed in the concave portion 1a of the base 1, and each electrode of the optical semiconductor element 3 is connected to the wiring layer 4 via the bonding wire 5. Then, the lid 2 was joined to the upper surface of the base 1, and the optical semiconductor element 3 was accommodated in a container composed of the base 1 and the lid 2, and finally attached to the base 1. By attaching and connecting the optical fiber member 11 to the tubular metal fixing member 8, an optical semiconductor device as a final product is obtained.

【0039】かかる光半導体装置は外部電気回路から供
給される駆動信号に基づいて光半導体素子3に所定の光
励起を起こさせ、該励起した光を透光性部材9を介し光
ファイバー部材11に授受させるとともに該光ファイバ
ー部材11の光フアイバー内を伝達させることによって
高速通信等に使用される。
The optical semiconductor device causes the optical semiconductor element 3 to perform predetermined light excitation based on a drive signal supplied from an external electric circuit, and transmits and receives the excited light to and from the optical fiber member 11 through the translucent member 9. In addition, by transmitting the light through the optical fiber of the optical fiber member 11, it is used for high-speed communication and the like.

【0040】次に前記光半導体素子収納用パッケージに
おける金属製固定部材の基体への取着について図5
(a)乃至(c)に基づき説明する。まず図5(a)に
示すごとく、金属製固定部材8の内部に透光性部材9を
ガラス14を介して取着し、金属製固定部材8の内部を
塞ぐ。
Next, the attachment of the metal fixing member to the base in the package for housing an optical semiconductor element will be described with reference to FIG.
A description will be given based on (a) to (c). First, as shown in FIG. 5A, a light transmitting member 9 is attached to the inside of the metal fixing member 8 via the glass 14, and the inside of the metal fixing member 8 is closed.

【0041】前記金属製固定部材8への透光性部材9の
取着は金属製固定部材8の内部に透光性部材9の融点よ
り低い融点を有する、例えば、低融点ハンダガラス14
を塗布するとともに該塗布した低融点ハンダガラス14
上に透光性部材9を載置し、しかる後、これを大気中、
約450℃の温度に加熱し、低融点ハンダガラス14を
溶融させることによって行われる。
The attachment of the light-transmitting member 9 to the metal fixing member 8 has a melting point lower than the melting point of the light-transmitting member 9 inside the metal fixing member 8.
And the applied low melting point solder glass 14
The translucent member 9 is placed on the upper part, and thereafter, this is
This is performed by heating to a temperature of about 450 ° C. to melt the low melting point solder glass 14.

【0042】次に前記透光性部材9を金属製固定部材8
に取着しているガラス14の露出表面を保護膜Pで被覆
する。
Next, the light transmitting member 9 is replaced with the metal fixing member 8.
Is covered with a protective film P.

【0043】前記保護膜Pとしては耐薬品性に優れる光
学膜として使用可能な酸化珪素、フッ化マグネシウム、
酸化チタンの少なくとも1種が好適に使用され、真空蒸
着法、イオンビーム蒸着法等によりガラス14の露出表
面に光学透過率を向上させる厚みに被着される。
As the protective film P, silicon oxide, magnesium fluoride, and the like, which can be used as an optical film having excellent chemical resistance,
At least one kind of titanium oxide is suitably used, and is applied to the exposed surface of the glass 14 to a thickness that improves optical transmittance by a vacuum evaporation method, an ion beam evaporation method, or the like.

【0044】次に図5(b)に示すごとく、筒状の金属
製固定部材8の表面に、基体1へのロウ付け取着を確
実、強固とするためにニッケルめっき層12及び金めっ
き層13を順次被着させる。
Next, as shown in FIG. 5B, a nickel plating layer 12 and a gold plating layer are formed on the surface of the cylindrical metal fixing member 8 in order to securely and firmly attach it to the base 1 by brazing. 13 are sequentially applied.

【0045】前記ニッケルめっき層12は金属製固定部
材8への金めっき層13の被着を強固とするための下地
部材であり、電解めっき法や無電解めっき法を採用する
ことによって金属製固定部材8の表面に約0.5〜5μ
mの厚みに被着される。
The nickel-plated layer 12 is a base member for firmly attaching the gold-plated layer 13 to the metal fixing member 8, and is made of metal by applying electrolytic plating or electroless plating. About 0.5 to 5μ on the surface of the member 8
m.

【0046】前記ニッケルめっき層12はこれを電解め
っき法を採用することによって形成する場合、金属製固
定部材8を、例えば、硫酸ニッケル、塩化ニッケル、ホ
ウ酸(NiSO4 ・6H2 O+NiCl2 ・6H2 O+
3 BO3 )からなるニッケルめっき浴中に浸漬すると
ともに金属製固定部材8に電流密度0.1〜2A/dm
2 のめっき用電力を印加することによって行われる。
When the nickel plating layer 12 is formed by employing an electrolytic plating method, the metal fixing member 8 may be made of, for example, nickel sulfate, nickel chloride, boric acid (NiSO 4 .6H 2 O + NiCl 2 .6H). 2 O +
H 3 BO 3 ) and a current density of 0.1 to 2 A / dm on the metal fixing member 8.
This is performed by applying the plating power of 2 .

【0047】また前記金めっき層13は金属製固定部材
8に対するロウ材の濡れ性を良好とする作用をなし、電
解めっき法や無電解めっき法を採用することによってニ
ッケルめっき層上に約0.5〜3μmの厚みに被着され
る。
The gold plating layer 13 has an effect of improving the wettability of the brazing material with respect to the metal fixing member 8. Deposited to a thickness of 5 to 3 μm.

【0048】前記金めっき層13はこれを電解めっき法
を採用することによって形成する場合、表面にニッケル
めっき層12が被着された金属製固定部材8を、例え
ば、シアン化金カリウムおよび燐酸カリウムからなる金
めっき浴中に浸漬するとともに金属製固定部材8に0.
2〜1.5A/dm2 のめっき用電力を印加することに
よって行われる。
When the gold plating layer 13 is formed by adopting the electrolytic plating method, the metal fixing member 8 having the nickel plating layer 12 adhered to the surface thereof may be formed by, for example, gold potassium cyanide and potassium phosphate. And dipped in a gold plating bath made of
This is performed by applying a plating power of 2 to 1.5 A / dm 2 .

【0049】更に前記金属製固定部材8の表面にニッケ
ルめっき層12及び金めっき層13を順次被着させる
際、めっき液の薬品が金属製固定部材8の内部に透光性
部材9を取着しているガラス14に作用しようとするが
該ガラス14はその露出表面が耐薬品性に優れる酸化珪
素、フッ化マグネシウム、酸化チタン等からなる保護膜
Pで被覆保護されていることから溶けることはなく、そ
の結果、金属製固定部材8への透光性部材9の取着強度
を極めて強固となすことができる。
Further, when the nickel plating layer 12 and the gold plating layer 13 are sequentially deposited on the surface of the metal fixing member 8, the chemical of the plating solution attaches the translucent member 9 inside the metal fixing member 8. However, since the exposed surface of the glass 14 is covered and protected by a protective film P made of silicon oxide, magnesium fluoride, titanium oxide, or the like having excellent chemical resistance, the glass 14 cannot be melted. As a result, the attachment strength of the translucent member 9 to the metal fixing member 8 can be made extremely strong.

【0050】また更に前記ニッケルめっき層12及び金
めっき層13は金属製固定部材8の内部に透光性部材9
をガラス14を介して取着した後に金属製固定部材8の
表面に被着されることからニッケルめっき層12及び金
めっき層13に熱が作用することはなく、その結果、ニ
ッケルめっき層12の一部が金めっき層13中を拡散
し、金めっき層13の表面に露出することはなく、同時
に露出したニッケルが酸化されて酸化ニッケルを形成す
ることもない。従って、金めっき層13はロウ材に対す
る濡れ性が極めて良好なものとなる。
Further, the nickel plating layer 12 and the gold plating layer 13 are provided inside the metal fixing member 8 with the light transmitting member 9.
Is attached to the surface of the metal fixing member 8 after being attached via the glass 14, so that heat does not act on the nickel plating layer 12 and the gold plating layer 13, and as a result, the nickel plating layer 12 Part of the metal does not diffuse into the gold plating layer 13 and is not exposed on the surface of the gold plating layer 13. At the same time, the exposed nickel is not oxidized to form nickel oxide. Therefore, the gold plating layer 13 has extremely good wettability to the brazing material.

【0051】そして最後に前記金属製固定部材8を基体
1の貫通孔1b周辺に予め被着させておいた金属層にロ
ウ材15を介しロウ付け取着することによって図5
(c)に示すごとく基体1への金属製固定部材8のロウ
付け取着が完了する。
Finally, the metal fixing member 8 is brazed and attached to the metal layer previously applied to the periphery of the through hole 1b of the base 1 through the brazing material 15 as shown in FIG.
As shown in (c), the brazing attachment of the metal fixing member 8 to the base 1 is completed.

【0052】前記金属製固定部材8の基体1へのロウ付
け取着は基体1の貫通孔1b周辺に被着されている金属
層上に間に金―錫合金(金:80重量%、錫:20重量
%)等からなる低融点のロウ材15を挟んで載置し、し
かる後、これを約300℃の温度に加熱し、低融点のロ
ウ材15を溶融させることによって行われる。この場
合、金属製固定部材8に被着されている金めっき層13
の表面にはロウ材に対し濡れ性が悪い酸化ニッケルの形
成がないことから金めっき層13とロウ材15とは極め
て強固に接合し、これによって金属製固定部材8は基体
1に極めて強固にロウ付け取着されることとなる。 な
お、本発明は上述の実施例に限定されるものではなく、
本発明の要旨を逸脱しない範囲であれば種々の変更は可
能であり、例えば、上述の実施例では、光半導体素子3
が光を励起する場合について説明したが、これが光ファ
イバー部材11を介して伝達された光を光半導体素子3
が電気信号に変換し、該変換された電気信号を外部に取
り出すようにした場合にも適用可能である。
The metal fixing member 8 is brazed to the base 1 by mounting a gold-tin alloy (gold: 80% by weight, tin) on a metal layer provided around the through hole 1b of the base 1. : 20% by weight) and the like, and then placed on the low melting point brazing material 15 and then heated to a temperature of about 300 ° C. to melt the low melting point brazing material 15. In this case, the gold plating layer 13 attached to the metal fixing member 8
Since there is no formation of nickel oxide having poor wettability with respect to the brazing material, the gold plating layer 13 and the brazing material 15 are bonded very firmly, so that the metal fixing member 8 is extremely firmly attached to the base 1. It will be brazed and attached. Note that the present invention is not limited to the above-described embodiment,
Various changes can be made without departing from the scope of the present invention. For example, in the above-described embodiment, the optical semiconductor device 3
Described the case where the optical semiconductor device 3 excites the light transmitted through the optical fiber member 11.
Is converted to an electric signal, and the converted electric signal is taken out to the outside.

【0053】また上述の実施例では基体1を酸化アルミ
ニウム質焼結体等のセラミックスで形成したが、これを
鉄―ニッケル―コバルト合金等の金属材料で形成しても
よい。
In the above-described embodiment, the base 1 is formed of ceramics such as an aluminum oxide sintered body, but may be formed of a metal material such as an iron-nickel-cobalt alloy.

【0054】[0054]

【発明の効果】本発明の光半導体素子収納用パッケージ
の製造方法によれば、金属製固定部材の内部に透光性部
材を取着しているガラスの露出表面を保護膜で被覆した
ことから透光性部材がガラスを介して取着されている金
属製固定部材の表面にニッケルめっき層及び金めっき層
を順次被着させたとしてもガラスは前記保護膜により保
護されていることからめっき液の薬品によって溶けるこ
とはなく、また金属製固定部材の内部に透光性部材を取
着した後に金属製固定部材の表面にニッケルめっき層及
び金めっき層を被着させたことから金めっき層表面にニ
ッケルめっき層の一部が拡散露出し、これが酸化されて
酸化ニッケルを形成することはなく、その結果、金属製
固定部材への透光性部材の取着強度が強固となり、かつ
金めっき層のロウ材に対する濡れ性が良好となって、透
光性部材が取着されている筒状の金属製固定部材を基体
に極めて強固にロウ付け取着することが可能となる。
According to the method of manufacturing a package for housing an optical semiconductor element of the present invention, the exposed surface of the glass having the translucent member attached inside the metal fixing member is covered with the protective film. Even if a nickel plating layer and a gold plating layer are sequentially applied to the surface of a metal fixing member to which a translucent member is attached via glass, the glass is protected by the protective film. The nickel plating layer and the gold plating layer are applied to the surface of the metal fixing member after the translucent member is attached inside the metal fixing member, and the gold plating layer surface is not melted. A portion of the nickel plating layer is diffused and exposed to the surface, and is not oxidized to form nickel oxide. As a result, the attachment strength of the translucent member to the metal fixing member becomes strong, and the gold plating layer No row Wettability becomes good for, it is possible to very firmly brazed attaching a cylindrical metal securing member translucent member is attached to the substrate.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体素子収納用パッケージの一実
施例を示す断面図である。
FIG. 1 is a cross-sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

【図2】図1に示す光半導体素子収納用パッケージの要
部断面図である。
FIG. 2 is a sectional view of a main part of the package for housing an optical semiconductor element shown in FIG. 1;

【図3】図1に示す光半導体素子収納用パッケージの側
面図である。
FIG. 3 is a side view of the package for housing an optical semiconductor element shown in FIG. 1;

【図4】図1に示す光半導体素子収納用パッケージの蓋
体を除いた状態の平面図である。
FIG. 4 is a plan view of the package for storing an optical semiconductor element shown in FIG. 1 in a state where a lid is removed.

【図5】(a)乃至(c)は図1に示す光半導体素子収
納用パッケージの金属製固定部材を基体にロウ付け取着
する際の各工程毎の要部断面図である。
5 (a) to 5 (c) are cross-sectional views of main parts in each step when a metal fixing member of the package for storing an optical semiconductor element shown in FIG. 1 is brazed and attached to a base.

【符号の説明】[Explanation of symbols]

1・・・基体 1a・・凹部 1b・・貫通孔 2・・・蓋体 3・・・光半導体素子 4・・・配線層 8・・・筒状の金属製固定部材 9・・・透光性部材 11・・・光ファイバー部材 12・・・ニッケルめっき層 13・・・金めっき層 14・・・ガラス 15・・・ロウ材 P・・・保護膜 DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Depression 1b ... Through-hole 2 ... Lid 3 ... Optical semiconductor element 4 ... Wiring layer 8 ... Cylindrical metal fixing member 9 ... Light transmission Functional member 11: Optical fiber member 12: Nickel plating layer 13: Gold plating layer 14: Glass 15: Brazing material P: Protective film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】上面に光半導体素子を収容するための凹部
を有する基体と、該基体の側部に形成された貫通孔と、
前記基体の貫通孔周辺の外表面にロウ付けされ、一端に
光ファイバー部材が接続される筒状の金属製固定部材
と、前記筒状の金属製固定部材の内部に取着され、金属
製固定部材の内部を塞ぐ透光性部材と、前記基体の上面
に取着され、前記凹部を塞ぐ蓋体とから成る光半導体素
子収納用パッケージであって、前記筒状の金属製固定部
材が下記(a)乃至(d)の工程によって基体の貫通孔
周辺の外表面にロウ付けされていることを特徴とする光
半導体素子収納用パッケージの製造方法。 (a)金属製固定部材の内部に透光性部材をガラスを介
して取着する工程と、(b)前記ガラスの露出面を保護
膜で被覆する工程と、(c)筒状の金属製固定部材の露
出表面にニッケルめっき層と金めっき層を順次被着させ
る工程と、(d)金属製固定部材を基体の貫通孔周辺の
外表面にロウ材を介してロウ付け取着する工程。
1. A base having a concave portion for accommodating an optical semiconductor element on an upper surface, a through hole formed in a side portion of the base,
A cylindrical metal fixing member brazed to the outer surface around the through hole of the base, and an optical fiber member connected to one end; and a metal fixing member attached to the inside of the cylindrical metal fixing member. And a lid attached to the upper surface of the base and closing the recess, wherein the cylindrical metal fixing member is formed of the following (a). And (d) brazing the outer surface around the through hole of the base body to the optical semiconductor element housing package. (A) attaching a translucent member to the inside of the metal fixing member via glass, (b) covering the exposed surface of the glass with a protective film, and (c) forming a cylindrical metal member. A step of sequentially depositing a nickel plating layer and a gold plating layer on the exposed surface of the fixing member; and (d) a step of brazing and attaching the metal fixing member to the outer surface around the through hole of the base via a brazing material.
【請求項2】前記保護膜が酸化珪素、フッ化マグネシウ
ム、酸化チタンの少なくとも1種からなることを特徴と
する請求項1に記載の光半導体素子収納用パッケージの
製造方法。
2. The method according to claim 1, wherein said protective film is made of at least one of silicon oxide, magnesium fluoride, and titanium oxide.
JP08052499A 1999-03-24 1999-03-24 Manufacturing method of optical semiconductor element storage package Expired - Fee Related JP3715818B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP08052499A JP3715818B2 (en) 1999-03-24 1999-03-24 Manufacturing method of optical semiconductor element storage package
US09/535,288 US6420205B1 (en) 1999-03-24 2000-03-24 Method for producing package for housing photosemiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08052499A JP3715818B2 (en) 1999-03-24 1999-03-24 Manufacturing method of optical semiconductor element storage package

Publications (2)

Publication Number Publication Date
JP2000277644A true JP2000277644A (en) 2000-10-06
JP3715818B2 JP3715818B2 (en) 2005-11-16

Family

ID=13720719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08052499A Expired - Fee Related JP3715818B2 (en) 1999-03-24 1999-03-24 Manufacturing method of optical semiconductor element storage package

Country Status (1)

Country Link
JP (1) JP3715818B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007147841A (en) * 2005-11-25 2007-06-14 Nippon Electric Glass Co Ltd Manufacturing method of lens component
CN113874551A (en) * 2019-07-31 2021-12-31 昭和电工株式会社 Laminate and method for producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007147841A (en) * 2005-11-25 2007-06-14 Nippon Electric Glass Co Ltd Manufacturing method of lens component
CN113874551A (en) * 2019-07-31 2021-12-31 昭和电工株式会社 Laminate and method for producing same
CN113874551B (en) * 2019-07-31 2023-10-03 株式会社力森诺科 Laminate and method for producing same

Also Published As

Publication number Publication date
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