JP2000263420A - Semiconductor substrate polishing device - Google Patents
Semiconductor substrate polishing deviceInfo
- Publication number
- JP2000263420A JP2000263420A JP7314399A JP7314399A JP2000263420A JP 2000263420 A JP2000263420 A JP 2000263420A JP 7314399 A JP7314399 A JP 7314399A JP 7314399 A JP7314399 A JP 7314399A JP 2000263420 A JP2000263420 A JP 2000263420A
- Authority
- JP
- Japan
- Prior art keywords
- dresser
- polishing
- washing
- cleaning
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体基板の研磨装
置に関する。The present invention relates to an apparatus for polishing a semiconductor substrate.
【０００２】[0002]
【従来の技術】近年、半導体デバイスの高密度，微細化
に伴い、パターン露光工程における光学的焦点マージン
の不足が問題となり、デバイスウェハ表面の平坦化が極
めて重要となっている。このウェハ平坦化技術の１つに
化学機械研磨法（ＣＭＰ：Chemical Mechanical Polish
ing）と呼ばれる図１に示す研磨加工法がある。2. Description of the Related Art In recent years, with the increase in the density and miniaturization of semiconductor devices, shortage of an optical focus margin in a pattern exposure process has become a problem, and planarization of a device wafer surface has become extremely important. One of the wafer flattening techniques is a chemical mechanical polishing (CMP) method.
ing) is shown in FIG.
【０００３】研磨パッド１１を回転定盤上１２に貼りつ
けて回転しておく。この研磨パッドは、例えば発泡ウレ
タン樹脂を薄いシート状にスライスして成形したもので
あり、被加工物の種類や仕上げたい表面あらさの程度に
よってその材質や微細な表面構造を種々選択して使いわ
ける。他方、加工すべきウェハ１は弾性のあるスポンジ
層（インサートとも呼ばれる）１３を介してウェハ保持
ホルダ１４に固定する。このウェハ保持ホルダ１４を回
転しながら研磨パッド１１表面に荷重し、さらに研磨パ
ッド１１の上に研磨スラリ１５を供給することによりウ
ェハ表面上の絶縁膜の凸部が研磨除去され、平坦化され
る。A polishing pad 11 is stuck on a rotating platen 12 and is rotated. This polishing pad is, for example, formed by slicing a urethane foam resin into a thin sheet shape, and selecting and using various materials and fine surface structures depending on the type of workpiece and the degree of surface roughness to be finished. . On the other hand, the wafer 1 to be processed is fixed to a wafer holding holder 14 via an elastic sponge layer (also called an insert) 13. A load is applied to the surface of the polishing pad 11 while rotating the wafer holding holder 14, and a polishing slurry 15 is further supplied onto the polishing pad 11, so that the projections of the insulating film on the wafer surface are polished and removed, and are planarized. .
【０００４】二酸化珪素等の絶縁膜を研磨する場合、一
般的に研磨スラリとしてはコロイダルシリカが用いられ
る。コロイダルシリカは直径３０ｎｍ程度の微細なシリ
カ粒子を水酸化カリウム等のアルカリ水溶液に懸濁させ
たものであり、アルカリによる化学作用が加わるため、
砥粒のみによる機械的研磨に比べ飛躍的に高い加工能率
と加工ダメージの少ない平滑面を得られる特徴がある。
ところが、量産に適用しようとすると、研磨パッド１１
の表面に目詰まりが発生し、加工能率の低下を招いてし
まう。加工能率を安定させるためには、研磨パッド１１
の表面を常に活性な状態に保持する必要があり、すなわ
ち研磨パッド１１の表面を目立てするためのドレスが必
要である。When polishing an insulating film such as silicon dioxide, colloidal silica is generally used as a polishing slurry. Colloidal silica is obtained by suspending fine silica particles having a diameter of about 30 nm in an aqueous alkali solution such as potassium hydroxide.
Compared to mechanical polishing using only abrasive grains, there is a feature that a significantly higher processing efficiency and a smooth surface with less processing damage can be obtained.
However, if it is intended to be applied to mass production, the polishing pad 11
Clogging occurs on the surface of the substrate, resulting in a reduction in processing efficiency. In order to stabilize the processing efficiency, the polishing pad 11
Of the polishing pad 11 must be kept active at all times, that is, a dress for sharpening the surface of the polishing pad 11 is required.
【０００５】図２に具体的な半導体デバイスウェハの平
坦化に用いられるＣＭＰ装置の構成例を示す。基本的に
は２プラテン，２ヘッドの装置である。FIG. 2 shows a specific example of the structure of a CMP apparatus used for flattening a semiconductor device wafer. Basically, it is a two-platen, two-head device.
【０００６】研磨パッドには本研磨を行うための硬質材
料の研磨パッド２１と仕上げ研磨を行うための軟質材料
の研磨パッド２２を用いている。両者はそれぞれ回転定
盤１２によって固定され、回転定盤１２の回転により連
動し回転する。As the polishing pad, a polishing pad 21 made of a hard material for performing main polishing and a polishing pad 22 made of a soft material for performing final polishing are used. Both are fixed by the rotating platen 12, and rotate in conjunction with the rotation of the rotating platen 12.
【０００７】ウェハ１は受け渡し台２３の位置から、ま
ずウェハ保持ホルダ１４に固定された後、回転揺動アー
ム２４により硬質材料のパッド２１上に送られ、ノズル
２５からの研磨液導入後、回転揺動アーム２４による揺
動およびウェハ保持ホルダ１４の加圧回転と硬質材料の
パッド２１の回転により本研磨を行う。さらに硬質材料
の研磨パッド２１での研磨終了後、回転揺動アーム２４
により軟質材料の研磨パッド２２上に送られ仕上げ研磨
を行う。その後、回転揺動アーム２４により受渡し台２
３の位置に戻る。The wafer 1 is firstly fixed to the wafer holding holder 14 from the position of the transfer table 23, then sent to the hard material pad 21 by the rotation swing arm 24, and after the polishing liquid is introduced from the nozzle 25, the wafer 1 is rotated. The main polishing is performed by the swing of the swing arm 24, the pressurization rotation of the wafer holding holder 14, and the rotation of the hard material pad 21. After the polishing with the hard material polishing pad 21 is completed, the rotary swing arm 24 is rotated.
Is sent to the polishing pad 22 made of a soft material to perform finish polishing. After that, the delivery table 2 is rotated by the rotation swing arm 24.
Return to position 3.
【０００８】ここで、研磨前には加工能率の安定化のた
めに、硬質材料の研磨パッド２１のドレスを行ってい
る。回転揺動アーム２４に取り付けられたスピンドルモ
ータ２７によりドレッサ２８を高速で回転させ、硬質材
料のパッド２１をドレスする。通常、ドレスによる硬質
材料の研磨パッド２１の切込み量およびドレッサ２８の
揺動時間はそれぞれ１〜２０μｍで１〜３００sec の範
囲である。この時用いられたドレッサ２８は、ダイヤ粒
を電鋳等の加工法で埋め込んだ直径６０mm程のカップ型
で形成されている。Here, before polishing, dressing of the polishing pad 21 made of a hard material is performed to stabilize the processing efficiency. The dresser 28 is rotated at high speed by the spindle motor 27 attached to the rotary swing arm 24, and the pad 21 made of a hard material is dressed. Normally, the cutting amount of the polishing pad 21 made of a hard material by the dress and the swinging time of the dresser 28 are each in the range of 1 to 20 μm and 1 to 300 sec. The dresser 28 used at this time is formed in a cup shape having a diameter of about 60 mm in which diamond grains are embedded by a working method such as electroforming.
【０００９】さて、上記ドレッサを用いて研磨パッドを
ドレスすると、少しずつ、砥粒が付着し、これがドレッ
サのサビの原因となり、このサビがスクラッチの原因と
なっていた。そのため、ドレッサを定期的に洗浄する必
要がある。When dressing the polishing pad using the dresser, abrasive grains adhere little by little, and this causes rust of the dresser, and this rust causes scratches. Therefore, it is necessary to periodically clean the dresser.
【００１０】従来の洗浄法は、ドレス時にドレッサ２８
に堆積した多量の遊離砥粒等の異物に対し、ドレッサ２
８を取り外し後、純水とＰＶＡ等のブラシにより除去し
ている。The conventional cleaning method uses a dresser 28 during dressing.
Dresser 2 removes a large amount of foreign particles such as loose abrasive particles
After removing 8, it is removed with pure water and a brush such as PVA.
【００１１】[0011]
【発明が解決しようとする課題】上記従来技術では、ド
レッサに堆積されたドレス時の異物が完全に除去出来
ず、その残留した異物が原因となってドレッサにサビが
発生する。これによりドレス能力の劣化が急進行する。
また、ドレッサに発生したサビによるスクラッチ発生の
懸念がある。In the above-mentioned prior art, the dressing foreign matter deposited on the dresser cannot be completely removed, and rust is generated on the dresser due to the remaining foreign matter. As a result, the deterioration of the dressing ability progresses rapidly.
Further, there is a concern that rust generated on the dresser may cause scratches.
【００１２】本発明の目的は、ドレッサに堆積された異
物をほぼ完全に除去し、ドレッサの劣化を最小限にする
事にある。An object of the present invention is to substantially completely remove foreign matters deposited on a dresser and minimize the deterioration of the dresser.
【００１３】[0013]
【課題を解決するための手段】ドレッサに堆積した異物
の除去能力の見込める洗浄方法として、純水に超音波を
用いる。Means for Solving the Problems As a cleaning method capable of removing foreign matter deposited on the dresser, ultrasonic waves are used in pure water.
【００１４】[0014]
【発明の実施の形態】本発明の実施例について図３、図
４を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.
【００１５】図２で説明した従来の装置にドレッサ２８
の洗浄槽３１を新たに設ける。さらに洗浄槽３１内には
超音波発生器３２を設け、純水張りをする。通常はウェ
ハ１加工位置側に純水をオーバーフローさせておく。ま
た、洗浄槽３１内の洗浄後の排水用として排水口４１を
設ける。A dresser 28 is added to the conventional apparatus described with reference to FIG.
Is newly provided. Further, an ultrasonic generator 32 is provided in the cleaning tank 31 and is filled with pure water. Normally, pure water overflows to the processing position side of the wafer 1. Further, a drain port 41 is provided for draining water in the cleaning tank 31 after cleaning.
【００１６】ドレッサ２８は、硬質材料の研磨パッド２
１上でのドレス終了後に、揺動回転アーム２５により洗
浄槽３１に移動する。その後、ドレッサ２８全体を超音
波の発生した純水の水張り面４２直下まで下降し、放置
状態で洗浄する。洗浄時間は研磨異物の組成や堆積具合
により異なるが、異物がＣｅＯ2の場合、３〜１０min程
度である。The dresser 28 is a polishing pad 2 made of a hard material.
After the dressing on 1, the wafer is moved to the cleaning tank 31 by the swingable rotating arm 25. Thereafter, the entire dresser 28 is lowered to a position immediately below the water-filled surface 42 of the pure water in which the ultrasonic waves are generated, and is washed while being left. The cleaning time varies depending on the composition and the degree of deposition of the polishing foreign matter, but is about 3 to 10 minutes when the foreign matter is CeO 2 .
【００１７】洗浄後は水張り面４２より上昇させ、ドレ
ッサ２８の自転により乾燥させる。また、ドレッサ２８
の乾燥中に洗浄槽３１内の洗浄後液を排水口４１より排
水する。その後、再度洗浄槽３１内の純水張りをする。After the washing, the dresser 28 is raised from the water-filled surface 42 and dried by rotating the dresser 28. In addition, dresser 28
During the drying, the liquid after washing in the washing tank 31 is drained from the drain port 41. Thereafter, the cleaning tank 31 is again filled with pure water.
【００１８】以上の洗浄工程により、ドレッサに付着し
た異物は完全に除去されるのである。By the above-described cleaning step, the foreign substances adhering to the dresser are completely removed.
【００１９】[0019]
【発明の効果】以上説明したように、本発明ではドレッ
サの洗浄において、純水に超音波を発生させる事により
ドレッサに堆積された異物の除去能力が向上する。これ
によりドレッサの長寿命化が期待出来る。また、平坦化
装置内にドレッサ洗浄槽および超音波発生器を設ける事
により、ドレッサを取り外す事無く容易に洗浄出来る。
また、これらによりドレッサの信頼性が向上し、高いウ
ェハ加工安定性が得られる。As described above, in the present invention, in cleaning the dresser, the ability to remove foreign substances deposited on the dresser is improved by generating ultrasonic waves in pure water. As a result, the life of the dresser can be prolonged. In addition, by providing a dresser cleaning tank and an ultrasonic generator in the flattening device, cleaning can be easily performed without removing the dresser.
In addition, the reliability of the dresser is improved, and high wafer processing stability is obtained.
【図１】化学機械研磨法を説明する図。FIG. 1 illustrates a chemical mechanical polishing method.
【図２】従来のＣＭＰ装置の構成を示す平面図。FIG. 2 is a plan view showing a configuration of a conventional CMP apparatus.
【図３】本発明でのＣＭＰ装置の構成を示す平面図。FIG. 3 is a plan view showing a configuration of a CMP apparatus according to the present invention.
【図４】本発明でのＣＭＰ装置の構成を示す正面図。FIG. 4 is a front view showing a configuration of a CMP apparatus according to the present invention.
１…ウェハ、１１…研磨パッド、１２…回転定盤、１３
…押さえパッド、１４…ウェハホルダ、１５…研磨スラ
リ、２１…硬質材料の研磨パッド、２２…軟質材料研磨
のパッド、２３…受渡し台、２４，２６…回転揺動アー
ム、２５…ノズル、２７…スピンドルモータ、２８…ド
レッサ、３１…洗浄槽、３２…超音波発生器、４１…排
水口、４２…水張り面。DESCRIPTION OF SYMBOLS 1 ... Wafer, 11 ... Polishing pad, 12 ... Rotary surface plate, 13
... holding pad, 14 ... wafer holder, 15 ... polishing slurry, 21 ... hard material polishing pad, 22 ... soft material polishing pad, 23 ... delivery table, 24, 26 ... rotary swing arm, 25 ... nozzle, 27 ... spindle Motor, 28: Dresser, 31: Cleaning tank, 32: Ultrasonic generator, 41: Drain port, 42: Water-filled surface.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 久賀谷 隆 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 石田 吉弘 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 古川 貴康 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 大月 繁夫 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 鈴木 幸夫 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 戸川 賢一 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 宝槻 正博 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 稲吉 健治 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 (72)発明者 大和田 秀一 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器事業部内 Ｆターム(参考） 3C058 AA07 AA16 AB06 AC01 AC04 DA02 DA17 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takashi Kugaya 882-Chair, Oaza-shi, Hitachinaka-city, Ibaraki Pref.Hitachi, Ltd.In the measuring instrument division of Hitachi, Ltd. (72) Inventor Takayasu Furukawa 882-Chair, Oji-shi, Hitachinaka-shi, Ibaraki Co., Ltd.Incorporated Hitachi-Measurement Instruments Division (72) Inventor Shigeo Otsuki 882-Chair, Oaza-shi, Hitachinaka-shi, Ibaraki Hitachi, Ltd.Measurement Instruments Division (72) Inventor Yukio Suzuki, Ibaraki Prefecture, Hitachinaka City, Oaza 882-mo, Inc. (72) Inventor Masahiro Takatsuki Hitachi, Ibaraki Prefecture 882, Momo, Ichika, Naka-shi, Ltd.Measurement Division, Hitachi, Ltd. (72) Inventor Kenji Inayoshi 882, Momo, Ichimo, Oita, Hitachinaka-shi, Ibaraki Prefecture, Measuring Division, Hitachi, Ltd. 882, Ichige, Hitachinaka-shi F term in the measuring instrument division of Hitachi, Ltd.
Claims (5)
を与えて前記研磨工具の研磨面で前記被加工物の表面を
研磨する半導体基板研磨装置において、前記研磨工具の
研磨面に表面荒れを形成するためのドレス工具と、前記
ドレス工具と前記研磨工具との間に相対的な運動を与え
る第１の移動手段と、前記ドレス工具を前記研磨工具の
研磨面に対し垂直な方向に移動する第２の移動手段と、
前記ドレス工具を洗浄するための洗浄手段とを備えたこ
とを特徴とする半導体基板研磨装置。1. A semiconductor substrate polishing apparatus for polishing a surface of a workpiece with a polishing surface of the polishing tool by giving a relative movement between the workpiece and a polishing tool. A dressing tool for forming a rough surface, first moving means for providing relative movement between the dressing tool and the polishing tool, and the dressing tool perpendicular to a polishing surface of the polishing tool. Second moving means moving in the direction,
A semiconductor substrate polishing apparatus comprising: a cleaning unit for cleaning the dress tool.
音波洗浄を用いることを特徴とする半導体基板研磨装
置。2. The semiconductor substrate polishing apparatus according to claim 1, wherein ultrasonic cleaning is used as said cleaning means.
を用いて前記ドレス工具を洗浄手段に移動する機能を含
むことを特徴とする半導体基板研磨装置。3. A semiconductor substrate polishing apparatus having a function of moving the dressing tool to a cleaning means using the first moving means and the second moving means.
するための洗浄槽と、洗浄後の異物が沈殿するのを防ぐ
ために前記洗浄槽に取り付けた排水口を含むことを特徴
とする半導体基板研磨装置。4. The semiconductor substrate according to claim 1, further comprising a cleaning tank for cleaning said dressing tool, and a drain port attached to said cleaning tank for preventing foreign substances after cleaning from settling. Polishing equipment.
洗浄槽内にて洗浄後、水張り面より上昇させて前記ドレ
ス工具を自転により乾燥させる工程を含むことを特徴と
する半導体基板研磨装置。5. The semiconductor substrate polishing apparatus according to claim 1, further comprising a step of cleaning the dress tool in the cleaning tank, and then lifting the dress tool from a water-filled surface to dry the dress tool by rotation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314399A JP2000263420A (en) | 1999-03-18 | 1999-03-18 | Semiconductor substrate polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314399A JP2000263420A (en) | 1999-03-18 | 1999-03-18 | Semiconductor substrate polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000263420A true JP2000263420A (en) | 2000-09-26 |
Family
ID=13509694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7314399A Pending JP2000263420A (en) | 1999-03-18 | 1999-03-18 | Semiconductor substrate polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000263420A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780088B1 (en) * | 1999-10-14 | 2004-08-24 | Sony Corporation | Chemical mechanical polishing apparatus and a method of chemical mechanical polishing using the same |
-
1999
- 1999-03-18 JP JP7314399A patent/JP2000263420A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780088B1 (en) * | 1999-10-14 | 2004-08-24 | Sony Corporation | Chemical mechanical polishing apparatus and a method of chemical mechanical polishing using the same |
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