JP2000246620A - Wafer polishing pad - Google Patents
Wafer polishing padInfo
- Publication number
- JP2000246620A JP2000246620A JP5568499A JP5568499A JP2000246620A JP 2000246620 A JP2000246620 A JP 2000246620A JP 5568499 A JP5568499 A JP 5568499A JP 5568499 A JP5568499 A JP 5568499A JP 2000246620 A JP2000246620 A JP 2000246620A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing pad
- pad
- polishing
- surface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、デバイスウエハ、
デバイス液晶等、特にデバイスパタ−ン模様が施された
ウエハ、あるいはウエハ表面にパタ−ン模様形成時に用
いるＣＭＰ研磨用パッドに関する。[0001] The present invention relates to a device wafer,
The present invention relates to a device liquid crystal or the like, particularly to a wafer provided with a device pattern pattern or a CMP polishing pad used for forming a pattern pattern on the wafer surface.
【０００２】[0002]
【従来の技術】半導体素子の製造工程においてウエハを
研磨することは行われている。例えばシリコンウエハ鏡
面にアルミニウムを蒸着して回路パタ−ンを形成し、そ
の上にＢＰＳＧ、ＰＴＥＯＳまたは酸化珪素等の絶縁膜
を積層形成した後、この絶縁膜を研磨パッドにより平坦
に研磨し、さらにその上に素子の内部構造を形成するこ
とが行われている。2. Description of the Related Art In a process of manufacturing a semiconductor device, a wafer is polished. For example, a circuit pattern is formed by evaporating aluminum on a mirror surface of a silicon wafer, and an insulating film such as BPSG, PTEOS, or silicon oxide is formed thereon, and then the insulating film is polished flat by a polishing pad. An internal structure of the element is formed thereon.
【０００３】半導体ウエハの研磨パッドとしては、ポリ
エステル不織布にポリウレタン樹脂を含浸させ、硬化さ
せたベロアタイプパッド、ポリエステル不織布基材の上
に熱可塑性樹脂を溶解したウレタンプレポリマ−溶液を
塗布し、硬化させて人工皮革の表面層を形成させたスエ
−ドタイプパッド、発泡ポリウレタンの弾性研磨層に硬
練り不活性ニトリルゴム層を積層した複層構造パッド
（ＵＳＰ３５０４４５７号）、ショア硬度６０〜８０、
空隙率４５〜７０％の発泡ポリウレタン弾性研磨層の下
に空隙率４０〜６０％のより硬い発泡ポリウレタン弾性
支持層を接着剤で貼着した複層構造パッド（特開平７−
２６６２１９号）が使用されている。As a polishing pad for a semiconductor wafer, a polyester nonwoven fabric is impregnated with a polyurethane resin and cured, and a velor-type pad is cured. A urethane prepolymer solution in which a thermoplastic resin is dissolved is applied on a polyester nonwoven fabric substrate and cured. A suede-type pad having a surface layer of artificial leather formed thereon, a multi-layer pad (US Pat. No. 3,504,457) in which an inert polishing nitrile rubber layer is laminated on an elastic polishing layer of polyurethane foam, and a Shore hardness of 60 to 80;
A multi-layered pad in which a harder foamed polyurethane elastic support layer having a porosity of 40 to 60% is adhered with an adhesive under a foamed polyurethane elastic polishing layer having a porosity of 45 to 70% (Japanese Patent Laid-Open Publication No.
No. 266219).
【０００４】さらに、研磨速度を向上させるために、シ
リカ、酸化セリウム、アルミナ等の砥粒を１５〜５０重
量％含有させたウレタン発泡弾性体パッドを使用するこ
とも提案されている（特開平６−１１４７４２号、同８
−２９０３５６号）。しかしながら、回路形成のアルミ
ニウムや銅のメタル層の上に形成された酸化珪素、酸化
テルル、酸化アルミニウム等の絶縁膜を研磨パッドで研
磨剤スラリ−を供給しながらＣＭＰ研磨し、メタルライ
ンが露出するまで絶縁膜を磨くにおいて、または絶縁膜
のスル−ホ−ルに金属膜を蒸着させ、金属膜を研磨して
金属回路を形成させる研磨において、全体を平坦に研磨
することと、メタルラインが削り込まれ過ぎないように
する必要があり、パッドがショア硬度５０〜７５の弾性
体の柔らかいものでは絶縁膜の厚み均一性は５〜１０％
と良好であるが、段差が２０００〜４５００オングスト
ロ−ムと高い欠点があり、逆にショア硬度８０〜１１０
の硬質パッドを用いると、段差は５００〜１０００オン
グストロ−ムと良好であるが、ウエハの厚み均一性の値
が１５〜２０％と低い。Further, in order to improve the polishing rate, it has been proposed to use a urethane foamed elastic pad containing 15 to 50% by weight of abrasive grains such as silica, cerium oxide, and alumina (Japanese Patent Laid-Open No. Hei 6 (1994)). -114742, 8
-290356). However, an insulating film such as silicon oxide, tellurium oxide, or aluminum oxide formed on a metal layer of aluminum or copper for forming a circuit is polished by CMP while supplying an abrasive slurry with a polishing pad to expose metal lines. In polishing an insulating film to a maximum extent, or in depositing a metal film on a through hole of the insulating film and polishing the metal film to form a metal circuit, the entire surface is polished flat and the metal line is cut. It is necessary to prevent the pad from being overloaded, and if the pad is a soft elastic body having a Shore hardness of 50 to 75, the thickness uniformity of the insulating film is 5 to 10%.
However, there is a disadvantage that the step is as high as 2000 to 4500 angstroms, and conversely, the Shore hardness is 80 to 110.
When the hard pad is used, the step is as good as 500 to 1000 angstroms, but the thickness uniformity value of the wafer is as low as 15 to 20%.
【０００５】さらに硬い研磨砥粒を含有させたパッドは
研磨速度を速くすることができるが得られるウエハの段
差が大きい欠点がある。近時、ＣＭＰ研磨されたウエハ
の段差が２００〜８００オングストロ−ム、厚み均一性
が２〜８％であることが要求されている。[0005] Pads containing harder abrasive grains can increase the polishing rate, but have the disadvantage that the resulting wafer has large steps. Recently, wafers polished by CMP are required to have a step of 200 to 800 angstroms and a thickness uniformity of 2 to 8%.
【０００６】かかる要求性能を満たすパッドとして、特
開平７−２６６２１９号公報はダイヤフラムに固定され
た円環状のウエハストッパ−に保持されたキャリヤ−に
ウエハを揺動自在に付着し、研磨パッドとしてショア硬
度８０〜１００の硬質表面層とショア硬度５０〜７０の
発泡ポリウレタン弾性支持層よりなる複層構造のパッド
を用いることを提案する。As a pad satisfying such required performance, Japanese Patent Application Laid-Open No. Hei 7-266219 discloses that a wafer is swingably attached to a carrier held by an annular wafer stopper fixed to a diaphragm, and is shored as a polishing pad. It is proposed to use a pad having a multilayer structure comprising a hard surface layer having a hardness of 80 to 100 and a foamed polyurethane elastic support layer having a Shore hardness of 50 to 70.
【０００７】このパッドは前記要求性能を満たすが、耐
熱性、耐久性が劣る。また、特開平１０−３０３１５２
号公報は、ヘッド内のダイヤフラムに揺動自在に取り付
けたパッドを用い、チャック機構に取り付けたウエハを
ＣＭＰ研磨することを提案するが、パッドの構造を開示
するものではない。This pad satisfies the required performance, but has poor heat resistance and durability. Also, Japanese Patent Application Laid-Open No. 10-303152
Japanese Patent Laid-Open Publication No. H11-163703 proposes that a wafer attached to a chuck mechanism be subjected to CMP polishing using a pad that is swingably attached to a diaphragm in a head, but does not disclose the structure of the pad.
【０００８】[0008]
【発明が解決しようとする課題】本発明は、厚み均一性
に優れ、段差が小さいウエハを与える耐熱性、耐久性に
優れた研磨用パッドの提供を目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing pad which is excellent in heat uniformity and durability, and which provides a wafer having excellent thickness uniformity and small steps.
【０００９】[0009]
【課題を解決するための手段】本発明は、ウエハ表面に
研磨パッドを押圧し、ウエハチャック機構のスピンドル
軸と研磨パッドのスピンドル軸を回転させることにより
回転するウエハ面に回転する研磨パッドを摺擦させてウ
エハを研磨するのに用いられる研磨パッドにおいて、該
研磨パッドのウエハ面を摺擦する硬質樹脂表面層は、粒
径が０．１μｍ以下の尿素、メラミン、イソシアヌル酸
およびメラミン・イソシアヌレ−トより選ばれた白色固
体潤滑剤を０．５〜１０重量％含有する、ウエハ研磨用
パッドを提供するものである。分解温度が４００℃以上
の白色固体潤滑剤をウエハと摺擦するパッドの硬質樹脂
表面層に配合したことにより、ウエハとパッドの滑りが
良好となり、パッドの耐久性が向上する。According to the present invention, a polishing pad is pressed against a wafer surface, and a rotating polishing pad is slid on a rotating wafer surface by rotating a spindle shaft of a wafer chuck mechanism and a spindle shaft of the polishing pad. In a polishing pad used to rub a wafer by rubbing, a hard resin surface layer rubbing the wafer surface of the polishing pad has a particle size of urea, melamine, isocyanuric acid and melamine isocyanurate having a particle size of 0.1 μm or less. The present invention provides a wafer polishing pad containing a white solid lubricant selected from the group consisting of 0.5 to 10% by weight. By blending a white solid lubricant having a decomposition temperature of 400 ° C. or more into the hard resin surface layer of the pad that rubs against the wafer, the sliding between the wafer and the pad becomes good, and the durability of the pad improves.
【００１０】本発明はまた、前記パッドとして、硬質樹
脂表面層のショア硬度（ＡＳＴＭ−Ｄ２２４０）が７５
〜１００のものを用いる。ショア硬度が７５〜１００の
ものを用いることにより、得られるウエハの厚み均一平
坦性と段差のバランスが向上する。本発明はまた、前記
パッドの硬質樹脂表面層は、更に、粒径が０．０１〜
０．１μｍのベ−マイト粒子を２〜２０重量％含有する
ことを特徴とする。砥粒の中でも柔らかいベ−マイト粒
子を用いることにより研磨速度は向上し、かつ、ウエハ
の厚み均一性は損なわれない。According to the present invention, the pad has a hard resin surface layer having a Shore hardness (ASTM-D2240) of 75.
〜100 are used. By using one having a Shore hardness of 75 to 100, the balance between the thickness uniformity flatness of the obtained wafer and the step is improved. In the present invention, the hard resin surface layer of the pad may further have a particle size of 0.01 to
It is characterized by containing 0.1 to 20% by weight of boehmite particles. The use of soft boehmite particles among the abrasive grains improves the polishing rate and does not impair the uniformity of the thickness of the wafer.
【００１１】本発明はさらに、前記パッドとして、ウエ
ハと摺擦するショア硬度が８５〜１００である硬質樹脂
表面層と、ショア硬度５０〜７５の弾性支持層とを有す
る複層構造のパッドを提供するものである。弾性支持層
のクッション性によりパッドの硬質樹脂表面層のウエハ
へのなじみを良好とする。The present invention further provides, as the pad, a pad having a multilayer structure having a hard resin surface layer having a Shore hardness of 85 to 100 for rubbing against a wafer and an elastic support layer having a Shore hardness of 50 to 75. Is what you do. The cushioning property of the elastic support layer makes the hard resin surface layer of the pad more familiar to the wafer.
【００１２】前記パッドは、硬質樹脂表面層の厚みが
０．５〜１．５ｍｍ、弾性支持層の厚みが１〜３ｍｍで
ある。これら厚みとすることにより、パッドの硬質樹脂
表面層のウエハへのなじみを良好とし、厚み均一性に優
れ、段差の小さいウエハを与える。In the pad, the thickness of the hard resin surface layer is 0.5 to 1.5 mm, and the thickness of the elastic support layer is 1 to 3 mm. By adopting these thicknesses, the hard resin surface layer of the pad is made familiar with the wafer, and a wafer having excellent thickness uniformity and small steps is provided.
【００１３】前記パッドの弾性支持層は、空隙率が３０
〜７０％の樹脂発泡体である。パッドが圧縮され、圧縮
された空隙内の空気の反発力によりパッドの硬質樹脂表
面層のウエハへのなじみが良好とする。The elastic support layer of the pad has a porosity of 30.
〜70% resin foam. The pad is compressed, and the repelling force of the air in the compressed gap makes the hard resin surface layer of the pad fit well into the wafer.
【００１４】[0014]
【発明の実施の形態】以下、発明を詳細に説明する。本
発明の研磨パッドは、ウエハ面を摺擦する硬質樹脂表面
層が、粒径０．１μｍ以下の尿素、メラミン、イソシア
ヌル酸およびメラミン・イソシアヌレ−トより選ばれた
固体潤滑剤を０．５〜１０重量％含有する。固体潤滑剤
としては、白色系の有機固体潤滑剤を用い、パッドの色
彩を考慮した。また、メラミン・イソシアヌレ−トは、
メラミンの水溶液と、イソシアヌル酸の水溶液を混合
し、析出、沈殿した微細な粒径を有るラメラ状の複塩で
ある。固体潤滑剤の含有量が０．５重量％未満ではパッ
ドとウエハの滑り性が良好でなく、また、パッドの発熱
防止効果向上、パッドの耐磨耗性向上が期待できない。
また、１０重量％を超えては更なる耐磨耗性向上が期待
できなく、コスト面で不利である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. The polishing pad of the present invention is characterized in that the hard resin surface layer rubbing the wafer surface contains a solid lubricant selected from urea, melamine, isocyanuric acid and melamine isocyanurate having a particle size of 0.1 μm or less from 0.5 to 0.5 μm. Contains 10% by weight. As the solid lubricant, a white organic solid lubricant was used, and the color of the pad was considered. Also, melamine isocyanurate is
An aqueous solution of melamine and an aqueous solution of isocyanuric acid are mixed, precipitated and precipitated to form a lamellar double salt having a fine particle size. If the content of the solid lubricant is less than 0.5% by weight, the slipperiness between the pad and the wafer is not good, and the effect of preventing heat generation of the pad and the wear resistance of the pad cannot be expected.
On the other hand, if the content exceeds 10% by weight, further improvement in wear resistance cannot be expected, which is disadvantageous in cost.
【００１５】ウエハにの主素材は、ウレタン樹脂発泡
体、ポリエステル繊維、ポリビニルアルコ−ル繊維、
ナイロン繊維等の繊維の不織布の表面に、発泡性ウレタ
ンプレポリマ−溶液を塗布、含浸させ、ついで発泡させ
たもの、前記不織布に、エチレン・酢酸ビニル共重合
体を発泡性ウレタンプレポリマ−と共に溶解した溶液を
塗布、含浸させ、ついで発泡させたもの、ショア硬度
の異なるウレタン発泡体同士を接着剤で貼付したもの、
空隙率が３０〜７０％のウレタン樹脂発泡体の表面に
発泡性ウレタンプレポリマ−溶液を塗布、含浸させ、つ
いで発泡させたもの、ウレタン樹脂発泡体の表面に不
織布を載せ、ついでこの不織布の表面に、発泡性ウレタ
ンプレポリマ−溶液を塗布、含浸させ、ついで発泡させ
たもの、等が利用できる。The main material of the wafer is urethane resin foam, polyester fiber, polyvinyl alcohol fiber,
A foamable urethane prepolymer solution is applied to the surface of a nonwoven fabric of a fiber such as a nylon fiber, impregnated, and then foamed. The ethylene / vinyl acetate copolymer is dissolved in the nonwoven fabric together with the foamable urethane prepolymer. The solution was applied, impregnated, then foamed, urethane foams with different Shore hardness were stuck together with an adhesive,
A foamable urethane prepolymer solution is applied and impregnated on the surface of a urethane resin foam having a porosity of 30 to 70%, then foamed, and a nonwoven fabric is placed on the surface of the urethane resin foam. A foamed urethane prepolymer solution is applied, impregnated, and then foamed.
【００１６】なかでも、ショア硬度が８５〜１００であ
る硬質ウレタン樹脂表面層と、ショア硬度５０〜７５、
空隙率が３０〜７０％のウレタン樹脂発泡体の弾性支持
層よりなる複層構造体が好ましい。硬質樹脂表面層の厚
みは、０．５〜１．５ｍｍ、弾性支持層の厚みは１〜３
ｍｍが好ましい。Among them, a hard urethane resin surface layer having a Shore hardness of 85 to 100, a Shore hardness of 50 to 75,
A multilayer structure comprising an elastic support layer of a urethane resin foam having a porosity of 30 to 70% is preferable. The thickness of the hard resin surface layer is 0.5 to 1.5 mm, and the thickness of the elastic support layer is 1 to 3 mm.
mm is preferred.
【００１７】ウレタン樹脂としては、ポリオ−ル等の活
性水素含有化合物と鎖延長剤とポリイソシアネ−ト化合
物とを反応させて得られる一般にウレタン発泡体形成材
料が用いられる。ポリオ−ルとしては、エチレングリコ
−ル、テトラメチレングリコ−ル、トリメチロ−ルプロ
パン、等の分子量が５０〜５００と小さい鎖延長剤の役
割のポリオ−ルと、ポリエチレンアジペ−ト、ポリオキ
シテトラメチレンアジペ−ト、ポリエチレングリコ−
ル、ポリプロピレングリコ−ル等の分子量が６００〜２
０００の項分子量のポリオ−ルとの混合物が好ましい。
必要により、酒石酸、リンゴ酸、マロン酸、クエン酸の
ように水酸基とカルボン酸を有する有機酸を配合しても
よい。活性水素含有化合物としては、前述のポリオ−ル
の他に、ジアミノジフェニルメタンが利用できる。As the urethane resin, a urethane foam-forming material generally obtained by reacting an active hydrogen-containing compound such as polyol with a chain extender and a polyisocyanate compound is used. Polyols such as ethylene glycol, tetramethylene glycol, and trimethylolpropane, which have a small molecular weight of 50 to 500 and serve as a chain extender, and polyethylene adipates and polyoxytetrals Methylene adipate, polyethylene glyco-
, Polypropylene glycol and the like have a molecular weight of 600-2.
Mixtures with polyols having a molecular weight of 000 are preferred.
If necessary, an organic acid having a hydroxyl group and a carboxylic acid such as tartaric acid, malic acid, malonic acid and citric acid may be blended. As the active hydrogen-containing compound, diaminodiphenylmethane can be used in addition to the above-mentioned polyol.
【００１８】ポリイソシアネ−ト化合物としては、イソ
シアネ−ト基を２個以上有する化合物で、例えば、４，
４'−ジフェニルメタンジイソシアネ−ト、２，４−ト
リレンジイソシアネ−ト、これらポリイソシアネ−トと
ポリオ−ルとを反応させたウレタンプレポリマ−等が使
用される。活性水素含有化合物（ＯＨ基、ＮＨ2基また
はＳＨ基含有有機化合物）とポリイソシアネ−ト化合物
の用いる割合は、活性水素１当量に対し、ＮＣＯ基が
１．０２〜１．２当量である。The polyisocyanate compound is a compound having two or more isocyanate groups.
Use is made of 4'-diphenylmethane diisocyanate, 2,4-tolylene diisocyanate, urethane prepolymers obtained by reacting these polyisocyanates with polyols, and the like. The proportion of the active hydrogen-containing compound (OH group, NH 2 group or SH group-containing organic compound) and the polyisocyanate compound used is 1.02 to 1.2 equivalents of NCO group per equivalent of active hydrogen.
【００１９】これら成分の他に溶剤のジメチルホルムア
ミド等の有機溶剤、水やフレオン等の発泡剤、シリコン
オイル等の気泡調整剤、エチレン・酢酸ビニル共重合
体、塩化ビニル・酢酸ビニル共重合体等の熱可塑性樹脂
が配合される。さらに、研磨速度を向上させるために、
ウエハの厚み均一性と段差のバランスを崩さないような
粒径が０．１μｍ以下のベ−マイトが配合される。In addition to these components, an organic solvent such as dimethylformamide as a solvent, a foaming agent such as water or Freon, a bubble regulator such as silicone oil, an ethylene / vinyl acetate copolymer, a vinyl chloride / vinyl acetate copolymer, etc. Thermoplastic resin is blended. Furthermore, in order to improve the polishing rate,
Boehmite having a particle size of 0.1 μm or less is used so as not to break the balance between the thickness uniformity of the wafer and the step.
【００２０】ベ−マイトは、アルミナ水和物の一種で、
Ａｌ・ＯＯＨまたはＡｌ2・ｘＨ2Ｏまたはスラリ−中の
陰イオンと結合したＡｌ2・ｘＨ2Ｏ（ｙ酸）で示され
る。酸としては塩酸、酢酸、硝酸等が挙げられる。粒径
は、０．１μｍ以下、好ましくは０．０１〜０．０３μ
ｍである。ベ−マイトは、旧モ−ス硬度が３〜４と柔ら
かい砥粒であり、アルミナ水和物の一種のジプサイト、
バイアライト等を１８０〜２５０℃の温度で加圧水熱処
理するか、ポリエチレンやポリプロピレンの合成に用い
られるチグラ−触媒成分のトリイソプロポキシアルミニ
ウムを加水分解することにより製造される粒体状または
コロイド状のものである。ベ−マイトは硬質樹脂表面層
に２〜２０重量％、好ましくは３〜１０重量％の割合で
含有させる。Boehmite is a type of alumina hydrate.
Al · OOH or Al 2 · xH 2 O or slurry - represented by Al 2 · xH 2 O bound to the anion medium (y acid). Examples of the acid include hydrochloric acid, acetic acid, and nitric acid. Particle size is 0.1 μm or less, preferably 0.01 to 0.03 μm
m. Boehmite is a soft abrasive having an old Mohs hardness of 3 to 4 and is a kind of alumina hydrate gypsite.
Granular or colloidal products produced by subjecting Vialite or the like to pressurized hydrothermal treatment at a temperature of 180 to 250 ° C or hydrolyzing triisopropoxyaluminum, a Ziegler catalyst component used in the synthesis of polyethylene and polypropylene. It is. Boehmite is contained in the hard resin surface layer at a ratio of 2 to 20% by weight, preferably 3 to 10% by weight.
【００２１】固体潤滑剤、ベ−マイトの発泡性ウレタン
樹脂溶液への配合は、ポリオ−ル等の活性水素含有化合
物に固体潤滑剤、ベ−マイト、気泡調整剤、触媒を配合
し、ついで攪拌下にポリイソシアネ−トをジメチルホル
ムアミド等の溶剤で溶解した液を加え、均一に混合す
る。パッドの製造はこの混合液を型内に注入し、常温〜
４０℃で１５〜６０分放置して発泡、硬化させ、ついで
硬化物の表面をグラインダ−で研磨あるいはスライサ−
で切削して表面に気泡が露呈した発泡体を得ることによ
り行なう。また、ウレタン発泡体の表面に前記混合液を
塗布、含浸させ、ついで発泡・硬化させることにより行
う。For mixing the solid lubricant and boehmite into the foamable urethane resin solution, a solid lubricant, boehmite, a foam regulator and a catalyst are mixed with an active hydrogen-containing compound such as polyol, and then stirred. A solution prepared by dissolving the polyisocyanate in a solvent such as dimethylformamide is added below, and mixed uniformly. The pad is manufactured by injecting this mixture into a mold and
Leave at 40 ° C. for 15 to 60 minutes to foam and cure, then grind the surface of the cured product with a grinder or slicer.
To obtain a foam having bubbles exposed on the surface. In addition, the mixture is applied to the surface of the urethane foam, impregnated with the mixture, and then foamed and cured.
【００２２】発泡体の空隙率（発泡倍率）、ショア硬度
は用いる原料の種類、組成比により調整する。ウエハと
摺擦するパッドの硬質樹脂表面層のショア硬度は、８５
〜１００、支持体層の弾性発泡体のそれは５０〜７５が
好ましい。硬質表面層のショア硬度を上記範囲とするこ
とにより得られるウエハの金属層と絶縁層の段差を小さ
くし、かつ、ウエハとのなじみを良好とする。支持層の
ショア硬度と空隙率を前述の範囲とすることによりウエ
ハとパッドの硬質樹脂表面層との当接圧力を均等化す
る。The porosity (expansion ratio) and Shore hardness of the foam are adjusted depending on the type of raw material used and the composition ratio. The Shore hardness of the hard resin surface layer of the pad rubbing with the wafer is 85
~ 100, and that of the elastic foam of the support layer is preferably from 50 to 75. By setting the Shore hardness of the hard surface layer within the above range, the step between the metal layer and the insulating layer of the obtained wafer is reduced, and the familiarity with the wafer is improved. The contact pressure between the wafer and the hard resin surface layer of the pad is made uniform by setting the shore hardness and the porosity of the support layer to the above-mentioned ranges.
【００２３】パッドの硬質樹脂表面層は、特開平７−２
６６２１９号公報の図５に開示されるように研磨パッド
に供給される研磨剤スラリ−がパッド全面に均一に供給
されるように格子状の幅１．５〜２ｍｍの溝を設けても
よい。ウエハの研磨は、特開平１０−３０３１５２号公
報や特開平７−２６６２１９号公報に開示されるパッド
揺動またはウエハ揺動タイプの研磨装置を用いて行なう
のが好ましい。The hard resin surface layer of the pad is disclosed in
As disclosed in FIG. 5 of U.S. Pat. No. 66219, a grid-like groove having a width of 1.5 to 2 mm may be provided so that the abrasive slurry supplied to the polishing pad is uniformly supplied over the entire surface of the pad. The polishing of the wafer is preferably performed using a pad swinging or wafer swinging type polishing apparatus disclosed in JP-A-10-303152 and JP-A-7-266219.
【００２４】研磨パッドのウエハへの当接圧力は、０．
０１〜０．５ｋｇ／ｃｍ2で、ウエハを保持するチャッ
クの回転数は３０〜３００ｒｐｍ、パッドの回転数は４
０〜１０００ｒｐｍである。研磨パッドはバキュ−ムチ
ャック機構に吸着されているウエハ上を０．１〜３ｃｍ
／秒で往復させるのが好ましい。ウエハ研磨中は、研磨
剤スラリ−または研磨液、または純水を研磨パッドまた
はウエハ表面に供給して行う。研磨剤スラリ−として
は、酸化セリウム、アルミナ、ベ−マイト、ニ酸化マン
ガン、シリカ、窒化珪素、窒化ホウソ等の粒径が０．０
１〜０．１μｍの微細な砥粒を１〜１５重量％含有する
酸性またはアルカリ性水分散液、または過酸化水素水分
散液が用いられる。必要によりスラリ−には、硝酸、酢
酸、燐酸、アンモニウム水、テトラメチルアンモニウム
ヒドロキシド、マレイン酸水素テトラメチルアンモニウ
ム等のｐＨ調整剤が配合される。The contact pressure of the polishing pad with the wafer is set to 0.1.
01 to 0.5 kg / cm 2 , the rotation speed of the chuck for holding the wafer is 30 to 300 rpm, and the rotation speed of the pad is 4
0 to 1000 rpm. The polishing pad is 0.1 to 3 cm above the wafer adsorbed by the vacuum chuck mechanism.
It is preferable to make a reciprocation at a rate of / sec. During wafer polishing, an abrasive slurry or a polishing liquid or pure water is supplied to a polishing pad or a wafer surface. As the abrasive slurry, cerium oxide, alumina, boehmite, manganese dioxide, silica, silicon nitride, boron nitride, etc. have a particle size of 0.0.
An acidic or alkaline aqueous dispersion containing 1 to 15% by weight of fine abrasive grains of 1 to 0.1 μm or a hydrogen peroxide aqueous dispersion is used. If necessary, a pH adjuster such as nitric acid, acetic acid, phosphoric acid, aqueous ammonium, tetramethylammonium hydroxide, or tetramethylammonium hydrogen maleate is added to the slurry.
【００２５】[0025]
【実施例】径が２００ｍｍのシリコン基板のシリコン酸
化膜上の低誘電率有機膜に形成されたスル−ホ−ルにＭ
ＯＣＶＤ方式で０．８μｍ厚銅張りされたウエハを、
０．０２〜０．０５μｍのシリカ粒子を５重量％、過酸
化水素水、マレイン酸水素テトラメチルアンモニウム、
テトラメチルアンモニウムヒドロキシドおよびメチルエ
チルセルロ−スを含有するｐＨ７．２の研磨剤スラリ−
を研磨パッドの中央に供給しつつ、銅膜厚みを０．２μ
ｍまで、ウエハと研磨パッドを各々１４０ｒｐｍの回転
数で回転させて平坦化処理し、銅配線を形成する研磨加
工を行った。研磨終了後、パッドを無加重とし、研磨剤
スラリ−の供給を止め、純水に切り替えウエハの洗浄を
行った。DESCRIPTION OF THE PREFERRED EMBODIMENTS A through hole formed on a low dielectric constant organic film on a silicon oxide film of a silicon substrate having a diameter of 200 mm has M
0.8μm thick copper-coated wafer by OCVD method
5% by weight of silica particles of 0.02 to 0.05 μm, aqueous hydrogen peroxide, tetramethylammonium hydrogen maleate,
Abrasive slurry of pH 7.2 containing tetramethylammonium hydroxide and methylethyl cellulose
Is supplied to the center of the polishing pad while the thickness of the copper film is 0.2 μm.
m, the wafer and the polishing pad were each rotated at a rotation speed of 140 rpm to perform a flattening process, and a polishing process for forming a copper wiring was performed. After the polishing, the pad was unloaded, the supply of the abrasive slurry was stopped, and the wafer was switched to pure water to wash the wafer.
【００２６】上記研磨パッドとして、ウレタン樹脂とし
て、ジエチレングリコ−ル、リンゴ酸、ポリオキシテト
ラメチレンアジペ−ト、分子量１０００のポリエチレン
グリコ−ル、４，４'−ジフェニルメタンジイソシアネ
−トと２，４−トリレンジイソシアネ−トの混合物、ジ
メチルホルムアミド（ＤＭＦ）、シリコンオイル、トリ
エチレンジアミンおよび水からなる原料を用い、これに
粒径０．０３〜０．１μｍのメラミン・イソシアヌレ−
ト、粒径０．０３〜０．０５μｍのコロイダルベ−マイ
トを必要により配合して形成された次に示すパッドを用
いた。As the polishing pad, diethylene glycol, malic acid, polyoxytetramethylene adipate, polyethylene glycol having a molecular weight of 1,000, 4,4'-diphenylmethane diisocyanate and 2,4 as urethane resins. A raw material consisting of a mixture of 4-tolylene diisocyanate, dimethylformamide (DMF), silicone oil, triethylenediamine and water is used, and melamine isocyanurate having a particle size of 0.03 to 0.1 μm is used.
And the following pad formed by mixing colloidal boehmite having a particle size of 0.03 to 0.05 μm as required.
【００２７】実施例１ ベ−マイト ５重量％、メラミン・イソシアヌレ−ト
２重量％を含有する空隙率２０％、ショア硬度９４、厚
み１．２ｍｍの硬質ウレタン樹脂表面層と、空隙率４５
％、ショア硬度６５、厚み２．０ｍｍのウレタン発泡樹
脂支持層の積層構造のパッド。Example 1 Boehmite 5% by weight, melamine isocyanurate
A hard urethane resin surface layer having a porosity of 20% containing 2% by weight, a Shore hardness of 94, and a thickness of 1.2 mm;
%, A pad having a laminated structure of a urethane foam resin support layer having a Shore hardness of 65 and a thickness of 2.0 mm.
【００２８】実施例２ メラミン・イソシアヌレ−ト ４重量％を含有する空隙
率２２％、ショア硬度９４、厚み１．２ｍｍの硬質ウレ
タン樹脂表面層と、空隙率４５％、ショア硬度６５、厚
み２．０ｍｍのウレタン発泡樹脂支持層の積層構造のパ
ッド。Example 2 A hard urethane resin surface layer containing 4% by weight of melamine isocyanurate and having a porosity of 22%, a Shore hardness of 94 and a thickness of 1.2 mm, a porosity of 45%, a Shore hardness of 65 and a thickness of 2. A pad having a laminated structure of a 0 mm urethane foam resin support layer.
【００２９】比較例１ 空隙率２６％、ショア硬度９４、厚み１．２ｍｍの硬質
ウレタン樹脂表面層と、空隙率４５％、ショア硬度６
５、厚み２．０ｍｍのウレタン発泡樹脂支持層の積層構
造のパッド。Comparative Example 1 A hard urethane resin surface layer having a porosity of 26%, a Shore hardness of 94 and a thickness of 1.2 mm, a porosity of 45% and a Shore hardness of 6
5, a pad having a laminated structure of a urethane foam resin support layer having a thickness of 2.0 mm.
【００３０】比較例２ ０．０５〜０．１μｍのシリカ粒子 ３５重量％を含有
する空隙率４０％、ショア硬度７５、厚み３．３ｍｍの
ウレタン発泡樹脂パッド。Comparative Example 2 A urethane foam resin pad having a porosity of 40%, a Shore hardness of 75 and a thickness of 3.3 mm containing 35% by weight of silica particles of 0.05 to 0.1 μm.
【００３１】実施例３ ベ−マイト ５重量％、イソシアヌル酸 ２重量％を含
有する空隙率２０％、ショア硬度９４、厚み１．２ｍｍ
の硬質ウレタン樹脂表面層と、空隙率４５％、ショア硬
度６５、厚み２．０ｍｍのウレタン発泡樹脂支持層の積
層構造のパッド。Example 3 Porosity of 20% containing 5% by weight of boehmite and 2% by weight of isocyanuric acid, Shore hardness of 94, thickness of 1.2 mm
Pad having a laminated structure of a hard urethane resin surface layer having a porosity of 45%, a Shore hardness of 65, and a thickness of 2.0 mm.
【００３２】研磨速度および研磨されたウエハの厚さ均
一性、段差（ディッシング：単位はオングストロ−ム）
は、次の通りであった。 研磨速度（μｍ） 均一性（％） 段差 実施例１ １．６ ２．０ ２００ 実施例２ １．３ ３．０ ４５０ 比較例１ １．１ ７．０ ８５０ 比較例２ ０．８ ５．０ １０００ 実施例３ １．４ ３．０ ４００Polishing rate, thickness uniformity of polished wafer, step (dishing: angstrom)
Was as follows. Polishing rate (μm) Uniformity (%) Step Example 1 1.6 2.0 200 Example 2 1.3 3.0 450 Comparative example 1 1.1 7.0 850 Comparative example 2 0.8 5.0 1000 Example 3 1.4 3.0 400
【００３３】[0033]
【発明の効果】本発明の研磨パッドは、絶縁膜と金属層
間の段差が小さく、厚さ均一性に優れたウエハを与える
ＣＭＰ研磨用に優れたパッドである。The polishing pad of the present invention is an excellent pad for CMP polishing, which has a small step between the insulating film and the metal layer and provides a wafer having excellent thickness uniformity.
Claims (6)
ハチャック機構のスピンドル軸と研磨パッドのスピンド
ル軸を回転させることにより回転するウエハ面に回転す
る研磨パッドを摺擦させてウエハを研磨するのに用いら
れる研磨パッドにおいて、 該研磨パッドのウエハ面を摺擦する硬質樹脂表面層は、
粒径が０．１μｍ以下の尿素、メラミン、イソシアヌル
酸およびメラミン・イソシアヌレ−トより選ばれた固体
潤滑剤を０．５〜１０重量％含有することを特徴とす
る、ウエハ研磨用パッド。A polishing pad is pressed against a surface of a wafer, and a spindle shaft of a wafer chuck mechanism and a spindle shaft of the polishing pad are rotated to rub the rotating polishing pad against a rotating wafer surface to polish the wafer. In the polishing pad used for, the hard resin surface layer rubbing the wafer surface of the polishing pad,
A pad for polishing a wafer, comprising a solid lubricant selected from urea, melamine, isocyanuric acid and melamine / isocyanurate having a particle size of 0.1 μm or less by 0.5 to 10% by weight.
脂表面層のショア硬度は７５〜１００であることを特徴
とする、請求項１に記載のウエハ研磨用パッド。2. The wafer polishing pad according to claim 1, wherein the hard resin surface layer rubbing the wafer surface of the polishing pad has a Shore hardness of 75 to 100.
脂表面層は、更に、粒径が０．０１〜０．１μｍのベ−
マイト粒子を２〜２０重量％含有することを特徴とす
る、請求項１に記載のウエハ研磨用パッド。3. The hard resin surface layer for rubbing the wafer surface of the polishing pad further has a particle diameter of 0.01 to 0.1 μm.
2. The wafer polishing pad according to claim 1, wherein the pad contains 2 to 20% by weight of mite particles.
０である硬質樹脂表面層と、ショア硬度が５０〜７５の
弾性支持層を有する複層構造体である、請求項１または
２に記載のウエハ研磨用パッド。4. The polishing pad has a Shore hardness of 85-10.
The wafer polishing pad according to claim 1 or 2, which is a multilayer structure having a hard resin surface layer having a hardness of 0 and an elastic support layer having a Shore hardness of 50 to 75.
０．５〜１．５ｍｍ、弾性支持層の厚みが１〜３ｍｍで
ある、請求項４に記載のウエハ研磨用パッド。5. The wafer polishing pad according to claim 4, wherein the polishing pad has a thickness of the hard resin surface layer of 0.5 to 1.5 mm and a thickness of the elastic support layer of 1 to 3 mm.
０〜７０％の樹脂発泡体である、請求項４に記載のウエ
ハ研磨用パッド。6. The elastic support layer of the polishing pad has a porosity of 3
The wafer polishing pad according to claim 4, which is a resin foam of 0 to 70%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5568499A JP2000246620A (en) | 1999-03-03 | 1999-03-03 | Wafer polishing pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5568499A JP2000246620A (en) | 1999-03-03 | 1999-03-03 | Wafer polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000246620A true JP2000246620A (en) | 2000-09-12 |
Family
ID=13005740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5568499A Pending JP2000246620A (en) | 1999-03-03 | 1999-03-03 | Wafer polishing pad |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000246620A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008029537A1 (en) * | 2006-09-08 | 2008-03-13 | Toyo Tire & Rubber Co., Ltd. | Method for production of polishing pad |
| JP2008546167A (en) * | 2005-02-18 | 2008-12-18 | ネオパッド テクノロジーズ コーポレイション | Customized polishing pad for CMP and method for making and using the same |
| US8167690B2 (en) | 2006-09-08 | 2012-05-01 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| CN101633150B (en) * | 2008-07-24 | 2012-05-30 | 贝达先进材料股份有限公司 | Polishing pad and method for forming microstructure thereof |
| US8257153B2 (en) | 2007-01-15 | 2012-09-04 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| US8318298B2 (en) | 2005-07-15 | 2012-11-27 | Toyo Tire & Rubber Co., Ltd. | Layered sheets and processes for producing the same |
| US8476328B2 (en) | 2008-03-12 | 2013-07-02 | Toyo Tire & Rubber Co., Ltd | Polishing pad |
| KR20130092625A (en) * | 2005-02-18 | 2013-08-20 | 넥스플래너 코퍼레이션 | Customized polishing pads for cmp and methods of fabrication and use thereof |
| US9126303B2 (en) | 2005-08-30 | 2015-09-08 | Toyo Tire & Rubber Co., Ltd. | Method for production of a laminate polishing pad |
-
1999
- 1999-03-03 JP JP5568499A patent/JP2000246620A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008546167A (en) * | 2005-02-18 | 2008-12-18 | ネオパッド テクノロジーズ コーポレイション | Customized polishing pad for CMP and method for making and using the same |
| KR20130092625A (en) * | 2005-02-18 | 2013-08-20 | 넥스플래너 코퍼레이션 | Customized polishing pads for cmp and methods of fabrication and use thereof |
| US8715035B2 (en) | 2005-02-18 | 2014-05-06 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| KR101616535B1 (en) * | 2005-02-18 | 2016-04-29 | 넥스플래너 코퍼레이션 | Customized polishing pads for cmp and methods of fabrication and use thereof |
| US8318298B2 (en) | 2005-07-15 | 2012-11-27 | Toyo Tire & Rubber Co., Ltd. | Layered sheets and processes for producing the same |
| US9126303B2 (en) | 2005-08-30 | 2015-09-08 | Toyo Tire & Rubber Co., Ltd. | Method for production of a laminate polishing pad |
| WO2008029537A1 (en) * | 2006-09-08 | 2008-03-13 | Toyo Tire & Rubber Co., Ltd. | Method for production of polishing pad |
| US8167690B2 (en) | 2006-09-08 | 2012-05-01 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| US8257153B2 (en) | 2007-01-15 | 2012-09-04 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| US8602846B2 (en) | 2007-01-15 | 2013-12-10 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| US8476328B2 (en) | 2008-03-12 | 2013-07-02 | Toyo Tire & Rubber Co., Ltd | Polishing pad |
| CN101633150B (en) * | 2008-07-24 | 2012-05-30 | 贝达先进材料股份有限公司 | Polishing pad and method for forming microstructure thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7470170B2 (en) | Polishing pad and method for manufacture of semiconductor device using the same | |
| TWI295609B (en) | ||
| US20050079806A1 (en) | Polishing pad | |
| EP2151299B1 (en) | Chemical mechanical polishing pad | |
| TWI621506B (en) | Polishing pad and its manufacturing method | |
| JP6113331B2 (en) | Polishing pad and manufacturing method thereof | |
| TWI442997B (en) | Polishing pad | |
| JP2006519115A (en) | Method for manufacturing fixed abrasive material | |
| KR101092944B1 (en) | polishing pad | |
| US20040209554A1 (en) | Polishing material and method of polishing therewith | |
| JP2006297582A (en) | Polishing pad | |
| JP2000246620A (en) | Wafer polishing pad | |
| JP2004337992A (en) | Fixed abrasive grain polishing pad, and method of polishing silicon wafer using fixed abrasive grain polishing pad | |
| JP2020055040A (en) | Polishing pad and manufacturing method for polished work-piece | |
| JP7118841B2 (en) | polishing pad | |
| JP2000246649A (en) | Polishing pad | |
| JP7349774B2 (en) | Polishing pad, method for manufacturing a polishing pad, method for polishing the surface of an object to be polished, method for reducing scratches when polishing the surface of an object to be polished | |
| JP4636787B2 (en) | Fixed abrasive polishing pad, polishing equipment | |
| EP4098400A1 (en) | Polishing pad and method for preparing a semiconductor device using the same | |
| EP4086041A1 (en) | Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same | |
| KR20070108850A (en) | Polishing pad | |
| JP2000301449A (en) | Wafer polishing pad | |
| KR20220045683A (en) | Polishing pad and preparing method of semiconductor device using the same | |
| JP4968875B2 (en) | Polishing pad | |
| KR102431390B1 (en) | Polishing pad and preparing method of semiconductor device using the same |