JP2000243310A - High precise shadow mask and its manufacture - Google Patents
High precise shadow mask and its manufactureInfo
- Publication number
- JP2000243310A JP2000243310A JP11041134A JP4113499A JP2000243310A JP 2000243310 A JP2000243310 A JP 2000243310A JP 11041134 A JP11041134 A JP 11041134A JP 4113499 A JP4113499 A JP 4113499A JP 2000243310 A JP2000243310 A JP 2000243310A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- shadow mask
- pattern
- opening pattern
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、テレビもしくはコ
ンピューター等の端末ディスプレーのブラウン管中に用
いられるシャドウマスク及びその製造方法に関する。The present invention relates to a shadow mask used in a cathode ray tube of a terminal display such as a television or a computer, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、シャドウマスクの高精細化、大画
面化が進み、金属基材の薄型化も進んでいる。高精細化
が進むにつれて、シャドウマスクの開口パターン幅も減
少する傾向にあり、十分な電子線透過率を確保するのが
難しい状況にある。2. Description of the Related Art In recent years, the definition and size of a shadow mask have been increased, and the thickness of a metal substrate has been reduced. As the definition increases, the width of the opening pattern of the shadow mask also tends to decrease, and it is difficult to secure a sufficient electron beam transmittance.
【０００３】シャドウマスクの製造方法としては、その
貫通孔の表裏寸法の異なる複雑な断面形状を再現するた
めフォトリソ法によるウェットエッチングによる加工法
が用いられている。As a method of manufacturing a shadow mask, a processing method by wet etching by a photolithography method is used in order to reproduce a complicated cross-sectional shape having different front and back dimensions of the through hole.
【０００４】一般的なシャドウマスクの製造方法は、図
４（ａ）〜（ｆ）に示すように、まず、鉄又は鉄合金よ
りなる金属基材２１の両面に感光性樹脂（フォトレジス
ト）を塗布、乾燥して感光層２２を形成する（図４
（ａ）参照）。[0004] In a general method of manufacturing a shadow mask, as shown in FIGS. 4A to 4F, first, a photosensitive resin (photoresist) is applied to both sides of a metal base 21 made of iron or an iron alloy. The photosensitive layer 22 is formed by coating and drying (FIG. 4)
(See (a)).
【０００５】次に、所定の遮光パターンを有する露光用
マスク（多くの場合、表裏２枚のマスク）を位置合わ
せ、密着して、所定の露光量で感光層にパターン露光を
行い、所定の薬液で現像、硬膜処理等を行い、金属基材
２１の両面に小孔パターン２３及び大孔パターン２４か
らなるレジストパターン２２ａ及び２２ｂを形成する
（図４（ｂ）参照）。[0005] Next, an exposure mask having a predetermined light-shielding pattern (in most cases, two masks on the front and back) is aligned and brought into close contact with each other to perform pattern exposure on the photosensitive layer with a predetermined exposure amount, and To form resist patterns 22a and 22b composed of a small hole pattern 23 and a large hole pattern 24 on both surfaces of the metal substrate 21 (see FIG. 4B).
【０００６】次に、レジストパターン２２ａ及び２２ｂ
が形成された金属基材２１の両面から塩化第２鉄液等を
用いて１次エッチング（ハーフエッチング）を行い、金
属基材の両面に所定形状の小孔開口パターン２５及び大
孔開口パターン２６を形成する（図４（ｃ）参照）。Next, resist patterns 22a and 22b
First etching (half-etching) is performed on both surfaces of the metal base material 21 with the ferric chloride solution or the like formed thereon, and a small hole opening pattern 25 and a large hole opening pattern 26 of a predetermined shape are formed on both surfaces of the metal base material. Is formed (see FIG. 4C).
【０００７】次に、金属基材２１の小孔開口パターン２
５側に所定の樹脂溶液をローラーコーティング、グラビ
アコーティング、スプレーコーティング等の方法にて塗
膜を形成し、乾燥・硬化してエッチング耐触樹脂層２７
を形成する（図４（ｄ）参照）。Next, the small hole opening pattern 2 of the metal base 21
On the fifth side, a predetermined resin solution is formed into a coating film by a method such as roller coating, gravure coating, spray coating, etc., and dried and cured to obtain an etching resistant resin layer 27.
Is formed (see FIG. 4D).
【０００８】次に、金属基材２１のもう一方の面の大孔
開口パターン２６を塩化第２鉄液等を用いて金属基材２
１が貫通するまで２次エッチング（スプレーエッチン
グ）を行い、大孔開口パターン２６ａを形成する（図４
（ｅ）参照）。Next, the large-hole opening pattern 26 on the other surface of the metal substrate 21 is formed on the metal substrate 2 using a ferric chloride solution or the like.
Secondary etching (spray etching) is performed until 1 penetrates to form a large hole opening pattern 26a (FIG. 4).
(E)).
【０００９】次に、大孔開口パターン２６ａが形成され
た金属基材２１を加熱したアルカリ溶液に浸漬もしくは
スプレーしてエッチング耐触樹脂層２７及びレジストパ
ターン２２ａ及び２２ｂを剥離処理し、水洗、乾燥を行
って所定形状の開口パターンを有するシャドウマスク２
０を得る（図２、図４（ｆ）参照）。Next, the metal substrate 21 on which the large-hole opening pattern 26a is formed is immersed or sprayed in a heated alkaline solution to peel off the etching-resistant resin layer 27 and the resist patterns 22a and 22b, followed by washing and drying. Mask 2 having an opening pattern of a predetermined shape
0 is obtained (see FIGS. 2 and 4 (f)).
【００１０】しかし、ウェットエッチングは等方性の強
い加工方法であり、所定の開口寸法を有するためには深
さ方向の他に横方向への余分な加工（一般にサイドエッ
チという）が発生し、特に高精細シャドウマスクではそ
れが問題となる。However, wet etching is a highly isotropic processing method, and extra processing (generally called side etching) occurs in the lateral direction in addition to the depth direction in order to have a predetermined opening dimension. This is particularly problematic for high definition shadow masks.
【００１１】[0011]
【発明が解決しようとする課題】本発明は、上記問題点
に鑑み考案されたもので、２次エッチング工程に電解エ
ッチング加工法を適用することによりサイドエッチの少
ない、形状再現性に優れたシャドウマスクの製造方法及
び高精細シャドウマスクを提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned problems, and has been proposed by applying an electrolytic etching method to a secondary etching step. An object of the present invention is to provide a mask manufacturing method and a high-definition shadow mask.
【００１２】[0012]
【課題を解決するための手段】本発明に於いて上記問題
を解決するために、まず請求項１においては、金属基材
の両面に所望のレジストパターンを形成し、前記金属基
材の両面から１次エッチング（ハーフエッチング）をし
て前記金属基材の両面に小孔開口パターン及び大孔開口
パターンを形成した後、前記小孔開口パターン側の前記
金属基材の片面にエッチング耐蝕樹脂層を形成し、前記
金属基材のもう一方の面の大孔開口パターンを２次エッ
チングして貫通させた後、前記エッチング耐蝕樹脂層及
び前記レジストパターンを剥離してシャドウマスクを作
製するシャドウマスクの製造方法において、前記２次エ
ッチングを電解エッチング加工法で行うことを特徴とす
る高精細シャドウマスクの製造方法としたものである。In order to solve the above-mentioned problems in the present invention, first, in claim 1, a desired resist pattern is formed on both sides of a metal base material, and the desired resist pattern is formed on both sides of the metal base material. After performing a primary etching (half etching) to form a small hole opening pattern and a large hole opening pattern on both surfaces of the metal base material, an etching corrosion resistant resin layer is formed on one surface of the metal base material on the small hole opening pattern side. Forming a large hole opening pattern on the other surface of the metal base material through a second etching to penetrate the metal base material, and then removing the etching corrosion-resistant resin layer and the resist pattern to produce a shadow mask. In the method, the secondary etching is performed by an electrolytic etching method, and the method is a method for manufacturing a high-definition shadow mask.
【００１３】また、請求項２においては、前記電解エッ
チング加工法で用いる電解液のＰＨが６.５〜７.５であ
ることを特徴とする請求項１に記載の高精細シャドウマ
スクの製造方法としたものである。Further, in claim 2, the pH of the electrolytic solution used in the electrolytic etching process is 6.5 to 7.5, and the method of manufacturing a high-definition shadow mask according to claim 1, It is what it was.
【００１４】さらにまた、請求項３においては、請求項
１又は請求項２に記載の方法で作製されたことを特徴と
する高精細シャドウマスクとしたものである。According to a third aspect of the present invention, there is provided a high-definition shadow mask produced by the method according to the first or second aspect.
【００１５】[0015]
【発明の実施の形態】本発明のシャドウマスクの製造方
法は通常のシャドウマスク製造工程の２次エッチング工
程に電解エッチング加工法を適用することにより、サイ
ドエッチの少ない、開口パターン形状再現性に優れた高
精細シャドウマスクの製造が可能となる。具体的には、
小孔開口パターン径１００μｍ、大孔開口パターン径２
５０μｍの高精細シャドウマスクが作製可能である。BEST MODE FOR CARRYING OUT THE INVENTION The shadow mask manufacturing method of the present invention employs an electrolytic etching method in a secondary etching process of a normal shadow mask manufacturing process, so that there is little side etching and excellent opening pattern shape reproducibility. It is possible to manufacture a high-definition shadow mask. In particular,
Small hole opening pattern diameter 100 μm, large hole opening pattern diameter 2
A 50 μm high-definition shadow mask can be manufactured.
【００１６】さらに、電解エッチングの電解液をＰＨ
６.５〜７.５にすることにより化学反応による金属部分
の溶解現象が抑えられ、純粋に電解エッチング加工の効
果を得ることができる。Further, the electrolytic solution for electrolytic etching is
By setting the ratio to 6.5 to 7.5, the dissolution phenomenon of the metal part due to the chemical reaction is suppressed, and the effect of the pure electrolytic etching can be obtained.
【００１７】[0017]
【実施例】以下実施例により本発明を詳細に説明する。 ＜実施例１＞まず、板厚１３０μｍの鉄合金基板（ＹＥ
Ｔ３６：日立金属株式会社製）からなる金属基材１１の
両面に水溶性レジスト（Ｒ−１７：富士薬品工業製）を
ディップコーティングにて塗布し、６０℃３０分乾燥し
て感光層１２を形成した（図３（ａ）参照）。The present invention will be described in detail with reference to the following examples. Example 1 First, a 130 μm-thick iron alloy substrate (YE
T36: A water-soluble resist (R-17: manufactured by Fuji Pharmaceutical Co., Ltd.) is applied on both sides of a metal substrate 11 made of Hitachi Metals, Ltd. by dip coating, and dried at 60 ° C. for 30 minutes to form a photosensitive layer 12. (See FIG. 3A).
【００１8】次に、所定のシャドウマスクパターンが形
成されたフォトマスクを感光層１２に密着し、３ｋＷの
超高圧水銀灯で、積算光量で１５００ｍｊ／ｃｍ2の露
光量で露光した。ここで、シャドウマスクパターンとし
て小孔パターン８０μｍφ及び大孔パターン１２０μｍ
φの円形状パターンを用いた。Next, a photomask on which a predetermined shadow mask pattern was formed was brought into close contact with the photosensitive layer 12 and exposed with a 3 kW ultra-high pressure mercury lamp at an exposure amount of 1500 mj / cm 2 in terms of integrated light amount. Here, a small hole pattern of 80 μmφ and a large hole pattern of 120 μm were used as shadow mask patterns.
A circular pattern of φ was used.
【００１9】次に、一般水道水を使って９０秒間スプレ
ー現像を行い、金属基材１１の両面に小孔パターン１３
及び大孔パターン１４を有するレジストパターン１２ａ
及びレジストパターン１２ｂを形成した（図３（ｂ）参
照）。Next, spray development was performed for 90 seconds using general tap water, and a small hole pattern 13 was formed on both sides of the metal substrate 11.
Pattern 12a having a large hole pattern 14
Then, a resist pattern 12b was formed (see FIG. 3B).
【００２０】次に、レジストパターン２２ａ及び２２ｂ
が形成された金属基材１１を比重１.５０、温度7０℃の
塩化第二鉄溶液をスプレー圧３ｋｇ／ｃｍ2で２分間ス
プレーエッチングして、１次エッチング（ハーフエッチ
ング）を行い、小孔開口パターン１５及び大孔開口パタ
ーン１６を形成した（図３（ｃ）参照）。Next, the resist patterns 22a and 22b
The metal substrate 11 on which is formed is spray-etched with a ferric chloride solution having a specific gravity of 1.50 and a temperature of 70 ° C. at a spray pressure of 3 kg / cm 2 for 2 minutes to perform primary etching (half-etching), The opening pattern 15 and the large hole opening pattern 16 were formed (see FIG. 3C).
【００２１】次に、金属基材１１の小孔開口パターン１
５側に所定の樹脂溶液を塗布し、乾燥・硬化してエッチ
ング耐触樹脂層１７を形成した（図３（ｄ）参照）。Next, the small hole opening pattern 1 of the metal base 11
A predetermined resin solution was applied to the 5th side, dried and cured to form an etching-resistant resin layer 17 (see FIG. 3D).
【００２２】次に、金属基材１１のもう一方の面の大孔
開口パターン１６を電解エッチングを行って金属基材１
１が貫通するまで２次エッチングを行い、大孔開口パタ
ーン１６ａを形成した（図３（ｅ）参照）。電解エッチ
ング条件は１０重量％硝酸ナトリウム水溶液からなる電
解液を用い、電圧８Ｖ、電極間距離１ｃｍとした。Next, the large hole opening pattern 16 on the other surface of the metal substrate 11 is electrolytically etched to
Secondary etching was performed until 1 penetrated to form a large hole opening pattern 16a (see FIG. 3E). The electrolytic etching conditions were such that an electrolytic solution composed of a 10% by weight aqueous solution of sodium nitrate was used, the voltage was 8 V, and the distance between the electrodes was 1 cm.
【００２３】次に、大孔開口パターン１６ａが形成され
た金属基材１１を８０℃のアルカリ剥離液中に３分間浸
漬し、エッチング耐触樹脂層１７及びレジストパターン
１２ａ及び１２ｂを剥離処理し、高精細シャドウマスク
１０を得た（図１、図３（ｆ）参照）。Next, the metal substrate 11 on which the large hole opening pattern 16a is formed is immersed in an alkaline stripping solution at 80 ° C. for 3 minutes, and the etching resistant resin layer 17 and the resist patterns 12a and 12b are stripped. A high-definition shadow mask 10 was obtained (see FIGS. 1 and 3 (f)).
【００２４】＜実施例２＞まず、板厚１３０μｍの鉄合
金基板（ＹＥＴ３６：日立金属株式会社製）からなる金
属基材１１の両面に水溶性レジスト（ＰＶ−Ｈ：ユニオ
ン化学製）をディップコーティングにて塗布し、６０℃
１５分乾燥して感光層１２を形成した（図３（ａ）参
照）。<Embodiment 2> First, a water-soluble resist (PV-H: manufactured by Union Chemical) is dip-coated on both sides of a metal substrate 11 made of a 130-μm-thick iron alloy substrate (YET36: manufactured by Hitachi Metals, Ltd.). At 60 ℃
After drying for 15 minutes, the photosensitive layer 12 was formed (see FIG. 3A).
【００２５】次に、所定のシャドウマスクパターンが形
成されたフォトマスクを感光層１２に密着し、３ｋＷの
超高圧水銀灯で、積算光量で２０００ｍｊ／ｃｍ2の露
光量で露光した。ここで、シャドウマスクパターンとし
て小孔パターン８０μｍφ及び大孔パターン１２０μｍ
φの円形状パターンを用いた。Next, a photomask on which a predetermined shadow mask pattern was formed was brought into close contact with the photosensitive layer 12 and exposed with a 3 kW ultra-high pressure mercury lamp at an exposure amount of 2000 mj / cm 2 in terms of an integrated light amount. Here, a small hole pattern of 80 μmφ and a large hole pattern of 120 μm were used as shadow mask patterns.
A circular pattern of φ was used.
【００２６】次に、イオン交換水を使って９０秒間スプ
レー現像を行い、金属基材１１の両面に小孔パターン１
３及び大孔パターン１４を有するレジストパターン１２
ａ及びレジストパターン１２ｂを形成した（図３（ｂ）
参照）。Next, spray development is performed for 90 seconds using ion-exchanged water to form a small hole pattern 1 on both surfaces of the metal substrate 11.
Pattern 12 having 3 and large hole pattern 14
a and a resist pattern 12b were formed (FIG. 3B).
reference).
【００２７】次に、レジストパターン２２ａ及び２２ｂ
が形成された金属基材１１を比重１.５０、温度7０℃の
塩化第二鉄溶液をスプレー圧３ｋｇ／ｃｍ2で２分間ス
プレーエッチングして、１次エッチング（ハーフエッチ
ング）を行い、小孔開口パターン１５及び大孔開口パタ
ーン１６を形成した（図３（ｃ）参照）。Next, the resist patterns 22a and 22b
The metal substrate 11 on which is formed is spray-etched with a ferric chloride solution having a specific gravity of 1.50 and a temperature of 70 ° C. at a spray pressure of 3 kg / cm 2 for 2 minutes to perform primary etching (half-etching), The opening pattern 15 and the large hole opening pattern 16 were formed (see FIG. 3C).
【００２８】次に、金属基材１１の小孔開口パターン１
５側に所定の樹脂溶液を塗布し、乾燥・硬化してエッチ
ング耐触樹脂層１７を形成した（図３（ｄ）参照）。Next, the small hole opening pattern 1 of the metal substrate 11
A predetermined resin solution was applied to the 5th side, dried and cured to form an etching-resistant resin layer 17 (see FIG. 3D).
【００２９】次に、金属基材１１のもう一方の面の大孔
開口パターン１６を電解エッチングを行って金属基材１
１が貫通するまで２次エッチングを行い、大孔開口パタ
ーン１６ａを形成した（図３（ｅ）参照）。電解エッチ
ング条件は１０重量％硝酸ナトリウム水溶液からなる電
解液を用い、電圧１２Ｖ、電極間距離１ｃｍとした。Next, the large hole opening pattern 16 on the other surface of the metal substrate 11 is electrolytically etched to
Secondary etching was performed until 1 penetrated to form a large hole opening pattern 16a (see FIG. 3E). The electrolytic etching conditions were such that an electrolytic solution consisting of a 10% by weight aqueous solution of sodium nitrate was used, the voltage was 12 V, and the distance between the electrodes was 1 cm.
【００３０】次に、大孔開口パターン１６ａが形成され
た金属基材１１を８０℃のアルカリ剥離液中に３分間浸
漬し、エッチング耐触樹脂層１７及びレジストパターン
１２ａ及び１２ｂを剥離処理し、高精細シャドウマスク
１０を得た（図１、図３（ｆ）参照）。Next, the metal substrate 11 on which the large hole opening pattern 16a is formed is immersed in an alkaline stripping solution at 80 ° C. for 3 minutes, and the etching resistant resin layer 17 and the resist patterns 12a and 12b are stripped. A high-definition shadow mask 10 was obtained (see FIGS. 1 and 3 (f)).
【００３１】実施例１及び実施例２の高精細シャドウマ
スクサンプルの形状観察を行った結果開口パターン孔径
バラツキの少ない、形状再現性に優れたものであった。Observation of the shape of the high-definition shadow mask samples of Examples 1 and 2 showed that the variation in the aperture pattern hole diameter was small and the shape reproducibility was excellent.
【００３２】[0032]
【発明の効果】本発明の高精細シャドウマスクの製造方
法によれば、シャドウマスク製造工程の２次エッチング
工程に電解エッチング加工法を適用することにより、サ
イドエッチの少ない、開口パターン形状再現性に優れた
高精細シャドウマスクの製造が可能となり、優れた実用
上の効果を発揮する。According to the method for manufacturing a high-definition shadow mask of the present invention, by applying the electrolytic etching method to the secondary etching step of the shadow mask manufacturing step, the side pattern is reduced and the opening pattern shape reproducibility is improved. An excellent high-definition shadow mask can be manufactured, and an excellent practical effect is exhibited.
【図１】本発明のシャドウマスクの一実施例の構成を示
す部分断面図である。FIG. 1 is a partial sectional view showing a configuration of an embodiment of a shadow mask of the present invention.
【図２】従来のシャドウマスクの一実施例の構成を示す
部分断面図である。FIG. 2 is a partial cross-sectional view showing a configuration of one embodiment of a conventional shadow mask.
【図３】(ａ)〜(ｆ)は、本発明のシャドウマスクの一実
施例の製造工程を工程順に示す部分断面図である。FIGS. 3A to 3F are partial cross-sectional views showing the manufacturing steps of one embodiment of the shadow mask of the present invention in the order of steps.
【図４】(ａ)〜(ｆ)は、従来のシャドウマスクの一実施
例の製造工程を工程順に示す部分断面図である。。FIGS. 4A to 4F are partial cross-sectional views showing a manufacturing process of one embodiment of a conventional shadow mask in the order of processes. .
１０……高精細シャドウマスク ２０……従来のシャドウマスク １１、２１……金属基材 １２、２２……感光層 １２ａ、１２ｂ、２２ａ、２２ｂ……レジストパターン １３、２３……小孔パターン １４、２４……大孔パターン １５、２５……小孔開口パターン １６、２６……大孔開口パターン １６ａ……大孔開口パターン １７、２７……エッチング耐蝕樹脂層 10 High-definition shadow mask 20 Conventional shadow mask 11, 21 Metal substrate 12, 22 Photosensitive layer 12a, 12b, 22a, 22b Resist pattern 13, 23 Small hole pattern 14, 24 large hole pattern 15, 25 small hole opening pattern 16, 26 large hole opening pattern 16a large hole opening pattern 17, 27 etching corrosion resistant resin layer
Claims (3)
を形成し、前記金属基材の両面から１次エッチング（ハ
ーフエッチング）をして前記金属基材の両面に小孔開口
パターン及び大孔開口パターンを形成した後、前記小孔
開口パターン側の前記金属基材の片面にエッチング耐蝕
樹脂層を形成し、前記金属基材のもう一方の面の大孔開
口パターンを２次エッチングして前記金属基材を貫通さ
せた後、前記エッチング耐蝕樹脂層及び前記レジストパ
ターンを剥離してシャドウマスクを作製するシャドウマ
スクの製造方法において、前記２次エッチングを電解エ
ッチング加工法で行うことを特徴とする高精細シャドウ
マスクの製造方法。1. A desired resist pattern is formed on both sides of a metal base material, and primary etching (half etching) is performed on both sides of the metal base material to form a small hole opening pattern and a large hole on both surfaces of the metal base material. After forming the opening pattern, an etching and corrosion resistant resin layer is formed on one surface of the metal substrate on the side of the small hole opening pattern, and the large hole opening pattern on the other surface of the metal substrate is subjected to secondary etching. In a method of manufacturing a shadow mask, in which the etching-resisting resin layer and the resist pattern are peeled off after penetrating a metal base material, the secondary etching is performed by an electrolytic etching method. Manufacturing method of high definition shadow mask.
のＰＨが６.５〜７.５であることを特徴とする請求項１
に記載の高精細シャドウマスクの製造方法。2. The method according to claim 1, wherein the pH of the electrolytic solution used in the electrolytic etching process is 6.5 to 7.5.
3. The method for producing a high-definition shadow mask according to 1.
されたことを特徴とする高精細シャドウマスク。3. A high-definition shadow mask produced by the method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04113499A JP4019539B2 (en) | 1999-02-19 | 1999-02-19 | High-definition shadow mask and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04113499A JP4019539B2 (en) | 1999-02-19 | 1999-02-19 | High-definition shadow mask and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000243310A true JP2000243310A (en) | 2000-09-08 |
| JP4019539B2 JP4019539B2 (en) | 2007-12-12 |
Family
ID=12599981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04113499A Expired - Fee Related JP4019539B2 (en) | 1999-02-19 | 1999-02-19 | High-definition shadow mask and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4019539B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050005948A (en) * | 2003-07-08 | 2005-01-15 | 그래피온 테크놀로지즈 유에스에이, 엘엘씨 | Ultra-minute pipe and the same manufacturing method |
| WO2005076307A1 (en) * | 2004-02-07 | 2005-08-18 | Graphion Technologies Usa, Llc | Shadow-mask made by electro-forming master of shadow-mask having a pin portion, and the manufacturing method of shadow-mask |
-
1999
- 1999-02-19 JP JP04113499A patent/JP4019539B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050005948A (en) * | 2003-07-08 | 2005-01-15 | 그래피온 테크놀로지즈 유에스에이, 엘엘씨 | Ultra-minute pipe and the same manufacturing method |
| WO2005076307A1 (en) * | 2004-02-07 | 2005-08-18 | Graphion Technologies Usa, Llc | Shadow-mask made by electro-forming master of shadow-mask having a pin portion, and the manufacturing method of shadow-mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4019539B2 (en) | 2007-12-12 |
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