JP2000178732A - Method of laminating and fixing mask board for vapor deposition to semiconductor wafer and device therefor - Google Patents
Method of laminating and fixing mask board for vapor deposition to semiconductor wafer and device thereforInfo
- Publication number
- JP2000178732A JP2000178732A JP10355881A JP35588198A JP2000178732A JP 2000178732 A JP2000178732 A JP 2000178732A JP 10355881 A JP10355881 A JP 10355881A JP 35588198 A JP35588198 A JP 35588198A JP 2000178732 A JP2000178732 A JP 2000178732A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- shape
- support plate
- mask board
- mask plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコンウエハー
等に半導体ウエハーにおいて、当該半導体ウエハーにお
ける各半導体チップの箇所ごとに金属製の電極を、マス
ク板を使用しての真空蒸着にて形成する場合に、前記マ
スク板を前記半導体ウエハーに重ねて固定するための方
法とその装置とに関するものである。The present invention relates to a case where a metal electrode is formed on a semiconductor wafer on a silicon wafer or the like at each position of each semiconductor chip on the semiconductor wafer by vacuum evaporation using a mask plate. Further, the present invention relates to a method and an apparatus for overlapping and fixing the mask plate on the semiconductor wafer.
【０００２】[0002]
【従来の技術】一般に、シリコンウエハー等に半導体ウ
エハーを使用してダイオードチップ等の半導体チップの
多数個を製造するに際しては、各半導体チップに電極を
形成する工程が必要があり、この電極を形成するに際し
ては、前記半導体ウエハーの表面に、その各半導体チッ
プの箇所ごとに電極形成用の抜き孔を備えたマスク板を
重ね合わせ、この状態で電極材料を真空蒸着することに
より、前記各半導体チップのうち抜き孔の部分に、当該
抜き孔と同じ形状の電極を形成すると言う方法が採用さ
れている。2. Description of the Related Art Generally, when a large number of semiconductor chips such as diode chips are manufactured by using a semiconductor wafer on a silicon wafer or the like, it is necessary to form an electrode on each semiconductor chip. In doing so, a mask plate provided with a hole for forming an electrode at each location of each semiconductor chip is superimposed on the surface of the semiconductor wafer, and the electrode material is vacuum-deposited in this state, whereby each of the semiconductor chips is Among them, a method of forming an electrode having the same shape as the hole in the hole is adopted.
【０００３】そして、前記した電極の真空蒸着に際し
て、従来は、図５〜図７に示すように、半導体ウエハー
Ａを、支持板１１の上面に載置し、この半導体ウエハー
Ａの上面に、多数個の抜き孔１２ａを穿設し、且つ、直
径を前記半導体ウエハーＡの直径よりも大きくしたマス
ク板１２を重ね合わせたのち、このマスク板１２を、そ
の周囲における複数箇所を、前記支持板１１に対してボ
ルト１３等の締結手段にて締め付けることにより、前記
半導体ウエハーＡに重ねた状態に固定し、この状態で、
真空蒸着炉内に入れて真空蒸着するようにしている。Conventionally, when the above-mentioned electrodes are vacuum-deposited, a semiconductor wafer A is placed on the upper surface of a support plate 11 as shown in FIGS. After a plurality of holes 12a are formed and a mask plate 12 having a diameter larger than the diameter of the semiconductor wafer A is superimposed on the mask plate 12, a plurality of locations around the mask plate 12 Is fastened to the semiconductor wafer A by being fastened by fastening means such as bolts 13.
It is placed in a vacuum deposition furnace to perform vacuum deposition.
【０００４】[0004]
【発明が解決しようとする課題】しかし、この従来にお
ける重ね固定装置では、直径を半導体ウエハーＡの直径
よりも大きくしたマスク板１２を、その周囲における複
数箇所を、前記支持板１１に対してボルト１３等の締結
手段にて締め付けることにより、前記半導体ウエハーＡ
に対して重ねて固定するものであり、前記半導体ウエハ
ーＡの直径よりも大きいマスク板１２の周囲を支持板１
１に対して締め付けたとき、前記マスク板１２は、図７
に二点鎖線で示すように、その中央の部分が高くなるよ
うに上向き凸状にそり変形し、当該マスク板１２のうち
中央の部分が半導体ウエハーＡの表面から離れるように
浮き上がることになるから、前記半導体ウエハーＡの表
面に形成される各電極の寸法・形状を前記マスク板１２
における抜き孔１２ａの寸法・形状通りに揃えることが
できず、換言すると、各電極における寸法・形状が著し
く不揃いになると言う問題があった。However, in this conventional lap-fixing device, a mask plate 12 having a diameter larger than the diameter of the semiconductor wafer A is bolted to a plurality of locations around the mask plate 12 with respect to the support plate 11. 13, the semiconductor wafer A
The periphery of the mask plate 12 larger than the diameter of the semiconductor wafer A is supported by the support plate 1.
1 when tightened to the position shown in FIG.
As shown by a two-dot chain line, the central portion of the mask plate 12 is warped upward so as to be higher, and the central portion of the mask plate 12 rises away from the surface of the semiconductor wafer A. The size and shape of each electrode formed on the surface of the semiconductor wafer
However, there is a problem that the dimensions and shapes of the holes 12a cannot be made exactly the same, in other words, the dimensions and shapes of the respective electrodes become extremely irregular.
【０００５】特に、マスク板１２における中央の部分が
半導体ウエハーＡの表面から浮き上がることにより、半
導体ウエハーＡにおける各電極のうち中央の部分におけ
る電極が、抜き孔１２ａよりも大きくなることになるか
ら、半導体ウエハーＡにおける各半導体チップのうちそ
の電極が所定の寸法・形状よりも大きくなり過ぎて不良
品になる半導体チップの数が増大すると言う問題もあっ
た。In particular, since the central portion of the mask plate 12 rises from the surface of the semiconductor wafer A, the electrode at the central portion of the electrodes of the semiconductor wafer A becomes larger than the hole 12a. There is also a problem that the number of defective semiconductor chips increases because the electrodes of the respective semiconductor chips on the semiconductor wafer A become too large in size and shape.
【０００６】本発明は、これらの問題を解消できるよう
にした重ね固定方法とその装置とを提供することを技術
的課題とするものである。[0006] It is an object of the present invention to provide a method and an apparatus for overlapping and fixing which can solve these problems.
【０００７】[0007]
【課題を解決するための手段】この技術的課題を達成す
るため本発明の方法は、「支持板における半導体ウエハ
ーの載置面を、中央の部分が周囲の部分よりも高い形状
にして、前記半導体ウエハーの表面に重ね合わせたマス
ク板のうち半導体ウエハーより外側の周囲における全周
又はその複数箇所を、前記支持板に対して締結すること
を特徴とする。」ものである。In order to achieve this technical object, a method according to the present invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a mounting surface of a semiconductor wafer on a support plate such that a central portion is higher than a peripheral portion; The entire periphery of the mask plate superimposed on the surface of the semiconductor wafer or a plurality of locations around the outer periphery of the semiconductor wafer is fastened to the support plate. "
【０００８】また、本発明の装置は、「半導体ウエハー
を載置する支持板と、前記半導体ウエハーの表面に重ね
合わせたマスク板のうち前記半導体ウエハーより外側の
周囲における全周又は複数箇所を前記支持板に対して着
脱自在に締結する締め付け手段とから成る重ね固定装置
において、前記支持板のうち前記半導体ウエハーを載置
する面を、中央の部分が周囲の部分よりも高い形状にす
る。」と言う構成にした。The apparatus according to the present invention may further comprise: a support plate on which the semiconductor wafer is mounted, and a mask plate superposed on the surface of the semiconductor wafer, which is formed on the entire periphery or at a plurality of locations around the outside of the semiconductor wafer. In a lap-fixing device comprising a fastening means for detachably fastening to a support plate, a surface of the support plate, on which the semiconductor wafer is mounted, has a shape in which a central portion is higher than a peripheral portion. " It was configured to say.
【０００９】[0009]
【発明の作用・効果】このように、支持板のうち半導体
ウエハーを載置する面を、中央の部分が周囲の部分より
も高い形状にしたことにより、前記半導体ウエハーに重
ね合わせたマスク板の周囲における全周又は複数箇所
を、支持板に対して締結したとき、前記マスク板が、そ
の中央の部分が高くなるように上向き凸状にそり変形す
ることに加えて、半導体ウエハーも、支持板のうち半導
体ウエハーを載置する面の形状に倣って、その中央の部
分が高くなるように上向き凸状にそり変形し、換言する
と、マスク板と半導体ウエハーとの両方が互いに略密着
した状態のもとで略同じように上向き凸状にそり変形す
ることになるから、前記マスク板における中央の部分
が、半導体ウエハーの表面から離れて浮き上がることを
著しく小さくできるか、或いは、殆ど皆無にすることが
できるのである。As described above, the surface of the support plate on which the semiconductor wafer is placed is formed to have a higher shape at the center than at the peripheral portion, so that the mask plate superposed on the semiconductor wafer can be formed. When the entire periphery or a plurality of locations around the periphery are fastened to the support plate, the mask plate is deformed in an upwardly convex shape so that the central portion thereof becomes higher, and the semiconductor wafer is also supported by the support plate. In accordance with the shape of the surface on which the semiconductor wafer is to be mounted, the central portion thereof is warped upwardly convex so as to be higher, in other words, in a state where both the mask plate and the semiconductor wafer are substantially in close contact with each other. Since the warp is deformed in the upward convex shape in substantially the same manner as above, it is possible to significantly reduce the floating of the central portion of the mask plate away from the surface of the semiconductor wafer. Alternatively, it is possible to almost nil.
【００１０】従って、本発明によると、半導体ウエハー
における各半導体チップの箇所に電極を真空蒸着にて形
成する場合に、前記各電極における寸法・形状を、マス
ク板における抜き孔の寸法・形状の通りに確実に揃える
ことができるから、各電極の寸法・形状の精度を大幅に
向上できると共に、半導体ウエハーにおける各半導体チ
ップのうちその電極が所定の寸法・形状よりも大きくな
り過ぎて不良品になる半導体チップの数を確実に低減で
きると言う効果を有する。Therefore, according to the present invention, when the electrodes are formed by vacuum evaporation at the locations of the respective semiconductor chips on the semiconductor wafer, the dimensions and shapes of the respective electrodes are made to match the dimensions and shapes of the holes in the mask plate. The accuracy of the size and shape of each electrode can be greatly improved, and the electrode of each semiconductor chip in a semiconductor wafer becomes too large than a predetermined size and shape, resulting in a defective product. This has the effect of reliably reducing the number of semiconductor chips.
【００１１】[0011]
【発明の実施の形態】以下、本発明の実施の形態を、図
１〜図３の図面について説明する。この図において、符
号１は、上面に半導体ウエハーＡを載せるようにした支
持板を、符号２は、多数個の抜き孔２ａを穿設し、且
つ、直径を前記半導体ウエハーＡの直径よりも大きくし
たマスク板を各々示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS. In this figure, reference numeral 1 denotes a support plate on which the semiconductor wafer A is mounted, and reference numeral 2 denotes a plurality of holes 2a, and the diameter is larger than the diameter of the semiconductor wafer A. Each of the mask plates is shown.
【００１２】前記支持板１の上面を、当該上面のうち中
央の部分に突起部１４を設けることにより、中央の部分
が周囲の部分よりも高い形状に構成する。そして、前記
支持板１の上面に、前記半導体ウエハーＡを載置し、次
いで、この半導体ウエハーＡ上面に、前記マスク板２を
重ね合わせたのち、このマスク板２の周囲における複数
箇所を、前記支持板１に対してボルト３等の締結手段に
て締め付ける。The upper surface of the support plate 1 is provided with a projection 14 at the center of the upper surface, so that the center is higher than the surroundings. Then, the semiconductor wafer A is placed on the upper surface of the support plate 1, and then the mask plate 2 is superimposed on the upper surface of the semiconductor wafer A. The support plate 1 is fastened by a fastening means such as a bolt 3.
【００１３】すると、前記マスク板２が、その中央の部
分が高くなるように上向き凸状にそり変形することに加
えて、半導体ウエハーＡも、支持板１のうち半導体ウエ
ハーＡを載置する面の形状に倣って、その中央の部分が
高くなるように上向き凸状にそり変形することになり、
換言すると、マスク板２と半導体ウエハーＡとの両方
が、図３に二点鎖線で示すように、同時に、互いに略密
着した状態で上向き凸状にそり変形することになるか
ら、前記マスク板２における中央の部分が、半導体ウエ
ハーＡの表面から離れて浮き上がることを著しく小さく
できるか、或いは、殆ど皆無にすることができるのであ
る。Then, in addition to the upward deformation of the mask plate 2 so that the central portion thereof becomes higher, the semiconductor wafer A also becomes a surface of the support plate 1 on which the semiconductor wafer A is placed. Following the shape of, it will be deformed in an upward convex shape so that the center part is higher,
In other words, both the mask plate 2 and the semiconductor wafer A are simultaneously deformed in a convex upward shape in a state of being substantially in close contact with each other as shown by a two-dot chain line in FIG. Can be significantly reduced or almost completely eliminated from the surface of the semiconductor wafer A.
【００１４】なお、前記支持板１における上面の中央の
部分に突起部４を設けることによって、中央の部分が周
囲の部分よりも高い形状に構成することに限らず、図４
に示すように、支持板１の上面の全体を緩やかに湾曲す
る球面４′に形成することによって、中央の部分が周囲
の部分よりも高い形状に構成するようにしても良いこと
は言うまでもなく、また、前記マスク板２の周囲は、前
記したように、その複数箇所において支持板１に対して
締結することに限らず、周囲の全周について支持板１に
対して締結するように構成しても良いのである。By providing the projection 4 at the center of the upper surface of the support plate 1, the center is not limited to a shape higher than the surroundings.
It is needless to say that the entire upper surface of the support plate 1 may be formed as a gently curved spherical surface 4 'as shown in FIG. Further, as described above, the periphery of the mask plate 2 is not limited to being fastened to the support plate 1 at a plurality of locations, but is configured to be fastened to the support plate 1 over the entire periphery. Is also good.
【図１】本発明の実施の形態を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】前記図１の縦断正面図である。FIG. 2 is a vertical sectional front view of FIG. 1;
【図３】前記第１の実施の形態において半導体ウエハー
にマスク板を重ね固定した状態を示す縦断正面図であ
る。FIG. 3 is a longitudinal sectional front view showing a state in which a mask plate is overlaid and fixed on a semiconductor wafer in the first embodiment.
【図４】本発明の別の実施の形態を示す縦断正面図であ
る。FIG. 4 is a longitudinal sectional front view showing another embodiment of the present invention.
【図５】従来における装置を示す斜視図である。FIG. 5 is a perspective view showing a conventional device.
【図６】前記図５の縦断正面図である。FIG. 6 is a vertical sectional front view of FIG. 5;
【図７】前記従来の装置において半導体ウエハーにマス
ク板を重ね固定した状態を示す縦断正面図である。FIG. 7 is a longitudinal sectional front view showing a state in which a mask plate is overlaid and fixed on a semiconductor wafer in the conventional apparatus.
１ 支持板 ２ マスク板 ２ａ 抜き孔 ３ 締め付け手段 ４ 突起部 ４′ 球面 Ａ 半導体ウエハー DESCRIPTION OF SYMBOLS 1 Support plate 2 Mask plate 2a Drilled hole 3 Tightening means 4 Projection 4 'Spherical A Semiconductor wafer
Claims (2)
を、中央の部分が周囲の部分よりも高い形状にして、前
記半導体ウエハーの表面に重ね合わせたマスク板のうち
半導体ウエハーより外側の周囲における全周又は複数箇
所を、前記支持板に対して締結することを特徴とする半
導体ウエハーに対する蒸着用マスク板の重ね固定方法。1. A mounting surface of a semiconductor wafer on a support plate, a center portion of which is higher than a peripheral portion, and a mask plate superimposed on a surface of the semiconductor wafer and a peripheral portion outside the semiconductor wafer. A method of laminating and fixing a vapor deposition mask plate to a semiconductor wafer, wherein the whole circumference or a plurality of locations is fastened to the support plate.
半導体ウエハーの表面に重ね合わせたマスク板のうち前
記半導体ウエハーより外側の周囲における全周又は複数
箇所を前記支持板に対して着脱自在に締結する締め付け
手段とから成る重ね固定装置において、 前記支持板のうち前記半導体ウエハーを載置する面を、
中央の部分が周囲の部分よりも高い形状にしたことを特
徴とする半導体ウエハーに対する蒸着用マスク板の重ね
固定装置。2. A support plate on which a semiconductor wafer is mounted, and a whole or a plurality of locations around a periphery of the mask plate superposed on the surface of the semiconductor wafer outside the semiconductor wafer are detachably attached to the support plate. In the lap fixing device comprising: fastening means for fastening the semiconductor wafer of the support plate,
An apparatus for stacking and fixing a mask plate for vapor deposition on a semiconductor wafer, wherein a central portion has a higher shape than a peripheral portion.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10355881A JP2000178732A (en) | 1998-12-15 | 1998-12-15 | Method of laminating and fixing mask board for vapor deposition to semiconductor wafer and device therefor |
| TW088106467A TW409300B (en) | 1998-05-21 | 1999-04-23 | Method of producing semiconductor and a mask for forming film pattern |
| US09/315,234 US6265324B1 (en) | 1998-05-21 | 1999-05-20 | Method of manufacturing semiconductor device and mask for forming thin film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10355881A JP2000178732A (en) | 1998-12-15 | 1998-12-15 | Method of laminating and fixing mask board for vapor deposition to semiconductor wafer and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000178732A true JP2000178732A (en) | 2000-06-27 |
Family
ID=18446214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10355881A Pending JP2000178732A (en) | 1998-05-21 | 1998-12-15 | Method of laminating and fixing mask board for vapor deposition to semiconductor wafer and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000178732A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006299292A (en) * | 2005-04-15 | 2006-11-02 | Ulvac Kyushu Corp | Vacuum deposition system, and film deposition method |
| KR100799813B1 (en) | 2005-07-20 | 2008-01-31 | 세이코 엡슨 가부시키가이샤 | Mask, mask manufacturing method, film forming method, electro-optic device manufacturing method, and electronic apparatus |
| JP2013209697A (en) * | 2012-03-30 | 2013-10-10 | Hitachi High-Technologies Corp | Film deposition apparatus and film deposition method |
| WO2016167358A1 (en) * | 2015-04-17 | 2016-10-20 | 大日本印刷株式会社 | Method for forming vapor deposition pattern, presser-plate-integrated pushing member, vapor deposition device, and method for manufacturing organic semiconductor element |
| CN107354427A (en) * | 2017-09-06 | 2017-11-17 | 京东方科技集团股份有限公司 | Mask plate microscope carrier and deposition system |
-
1998
- 1998-12-15 JP JP10355881A patent/JP2000178732A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006299292A (en) * | 2005-04-15 | 2006-11-02 | Ulvac Kyushu Corp | Vacuum deposition system, and film deposition method |
| JP4691385B2 (en) * | 2005-04-15 | 2011-06-01 | アルバック九州株式会社 | Vacuum deposition system |
| KR100799813B1 (en) | 2005-07-20 | 2008-01-31 | 세이코 엡슨 가부시키가이샤 | Mask, mask manufacturing method, film forming method, electro-optic device manufacturing method, and electronic apparatus |
| JP2013209697A (en) * | 2012-03-30 | 2013-10-10 | Hitachi High-Technologies Corp | Film deposition apparatus and film deposition method |
| WO2016167358A1 (en) * | 2015-04-17 | 2016-10-20 | 大日本印刷株式会社 | Method for forming vapor deposition pattern, presser-plate-integrated pushing member, vapor deposition device, and method for manufacturing organic semiconductor element |
| US10947616B2 (en) | 2015-04-17 | 2021-03-16 | Dai Nippon Printing Co., Ltd. | Method for forming vapor deposition pattern, pressing-plate-integrated type pressing member, vapor deposition apparatus, and method for producing organic semiconductor element |
| CN107354427A (en) * | 2017-09-06 | 2017-11-17 | 京东方科技集团股份有限公司 | Mask plate microscope carrier and deposition system |
| CN107354427B (en) * | 2017-09-06 | 2023-10-13 | 京东方科技集团股份有限公司 | Mask plate carrying table and evaporation system |
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