JP2000178526A - Adhesive for electronic parts, adhesive film and semiconductor device using them - Google Patents

Adhesive for electronic parts, adhesive film and semiconductor device using them

Info

Publication number
JP2000178526A
JP2000178526A JP10358534A JP35853498A JP2000178526A JP 2000178526 A JP2000178526 A JP 2000178526A JP 10358534 A JP10358534 A JP 10358534A JP 35853498 A JP35853498 A JP 35853498A JP 2000178526 A JP2000178526 A JP 2000178526A
Authority
JP
Japan
Prior art keywords
adhesive
film
mpa
pts
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10358534A
Other languages
Japanese (ja)
Inventor
Tomohiro Nagoya
友宏 名児耶
Yoshihiro Nomura
好弘 野村
Yoichi Hosokawa
羊一 細川
Hiroshi Kirihara
博 桐原
Shinji Iioka
真志 飯岡
Satoshi Yanagisawa
諭 柳沢
Yasushi Shimada
靖 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP10358534A priority Critical patent/JP2000178526A/en
Publication of JP2000178526A publication Critical patent/JP2000178526A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an adhesive which has low elasticity, heat resistance, anti- electrochemical corrosion and humidity resistance by including an acrylic copolymer with a specified weight-average molecular weight which contains a specified amount of an acrylate, has a specific glass transition temperature and contains an epoxy group. SOLUTION: This adhesive comprises a combination of 100 pts.wt. of an acrylic copolymer with a weight-average molecular weight of 400,000-2,000,000 which contains 2-6 wt.% of glycidyl (metha)acrylate, has a glass transition temperature of -50-120 deg.C and contains an epoxy group with 0.1-10 pts.wt. of a coupling agent, 5-10 pts.wt. of an ion trapping agent and 2-20 pts.vol. of a mineral filler based on 100 pts.vol. of the copolymer. The adhesive has a storing elasticity of 10-2,000 MPa at 25 deg.C and 1-30 Mpa at 16 deg.C. As a mineral filler, aluminum hydroxide, calcium carbonate, alumina, silica and the like are used. As a coupling agent, γ-glycidoxypropyltrimethoxysilane, γ- aminopropyltriethoxysilane and the like are used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体チップの接
着に用いられる電子部品用接着剤、接着フィルム及びこ
れらを用いた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive for electronic parts, an adhesive film used for bonding semiconductor chips, and a semiconductor device using the same.

【0002】[0002]

【従来の技術】近年、電子機器の小型化、高周波数動作
化の動向に伴い、これに搭載する半導体パッケージは基
板に高密度で実装することが要求され、小型・軽量化が
進むとともに、外部端子がパッケージ下部にエリアアレ
イ状に配置されたBGA(ボールグリッドアレイ)やC
SP(チップサイズパッケージ)と呼ばれる小型のパッ
ケージの開発が進められている。
2. Description of the Related Art In recent years, with the trend of downsizing and high-frequency operation of electronic devices, it is required that semiconductor packages to be mounted thereon be mounted on a substrate at high density. BGA (ball grid array) or C with terminals arranged in an area array below the package
Development of a small package called an SP (chip size package) is underway.

【0003】これらのパッケージは、2層配線構造を有
するガラスエポキシ基板や1層配線構造のポリイミド基
板などの有機基板の上に絶縁性接着剤を介してチップを
搭載し、チップ側の端子と配線板側端子とがワイヤボン
ドないしはTAB(テープオートメーテッドボンディン
グ)のインナーボンディング方式で接続され、接続部と
チップ上面部ないしは端面部とがエポキシ系封止材ない
しはエポキシ系液状封止材で封止され、配線基板裏面に
はんだボールなど金属端子がエリアアレイ状に配置され
ている構造が採用されている。そして、これらのパッケ
ージの複数個が電子機器の基板にはんだリフロー方式で
高密度に面付け一括実装する方式が採用されつつある。
In these packages, a chip is mounted on an organic substrate such as a glass epoxy substrate having a two-layer wiring structure or a polyimide substrate having a single-layer wiring structure via an insulating adhesive, and terminals on the chip side are connected to wiring. The board side terminals are connected by wire bonding or inner bonding method of TAB (tape automated bonding), and the connection portion and the chip upper surface or end surface are sealed with an epoxy-based sealing material or an epoxy-based liquid sealing material. In addition, a structure is employed in which metal terminals such as solder balls are arranged in an area array on the back surface of a wiring board. In addition, a method in which a plurality of these packages are mounted on a substrate of an electronic device at high density by a solder reflow method and are collectively mounted is being adopted.

【0004】しかし、これらのパッケージに用いられる
絶縁性の接着剤の一例としては、動的粘弾性測定装置で
測定される25℃での貯蔵弾性率が3000MPa以上
の液状のエポキシダイボンド材が用いられていて、パッ
ケージを基板に実装した後のハンダボール接続部(2次
側)の接続信頼性が悪く、耐温度サイクル信頼性に劣っ
ていた。さらに、他の事例では、絶縁性の接着剤として
25℃での貯蔵弾性率が10MPa以下の液状シリコー
ン系エラストマが提案されており、上記した耐温度サイ
クル性には優れるものの配線基板表面に対する高温時の
接着性に劣り耐吸湿リフロー性に劣るという問題があっ
た。特に、耐リフロー性については両者の事例において
も、液状の絶縁性接着剤を有機基板に塗布する過程でボ
イドを巻き込み易く、ボイドが起点となって、吸湿リフ
ロー時にクラックが進展したり、有機基板が膨れたりす
る不良モードが観察された。
However, as an example of an insulating adhesive used for these packages, a liquid epoxy die bond material having a storage elastic modulus at 25 ° C. of 3000 MPa or more measured by a dynamic viscoelasticity measuring device is used. Therefore, the connection reliability of the solder ball connection portion (secondary side) after mounting the package on the substrate was poor, and the temperature cycle resistance was poor. Further, in other cases, a liquid silicone elastomer having a storage elastic modulus at 25 ° C. of 10 MPa or less has been proposed as an insulating adhesive. There was a problem that the adhesiveness was poor and the moisture absorption reflow resistance was poor. In particular, regarding the reflow resistance, in both cases, the voids are easily involved in the process of applying the liquid insulating adhesive to the organic substrate, and the voids serve as a starting point, and cracks develop during moisture absorption reflow, and A defective mode in which the ink swells was observed.

【0005】また、電子機器の発達に伴い、電子部品の
搭載密度が高くなり、低コストが期待できるプリント配
線板への半導体のベアチップ実装が進められてきてい
る。半導体チップの実装用基板としてはアルミナ等のセ
ラミック基板が多く用いられてきた。これは、半導体チ
ップの熱膨張係数が約4ppm/℃と小さいので、接続
信頼性を確保するために熱膨張係数の比較的小さい実装
用基板の使用が求められていたことと、半導体チップが
発生する熱を外部へ放熱させやすくするために熱伝導率
の比較的高い実装用基板の使用が求められていたことが
主な理由であった。このようなセラミック基板への半導
体チップの実装には銀ペーストに代表される液状の接着
剤が使われている。
[0005] Further, with the development of electronic equipment, mounting density of electronic components has been increased, and mounting of semiconductor bare chips on printed wiring boards, where low cost can be expected, has been promoted. Ceramic substrates such as alumina have been often used as substrates for mounting semiconductor chips. This is because the thermal expansion coefficient of the semiconductor chip is as small as about 4 ppm / ° C., and it has been required to use a mounting substrate having a relatively small thermal expansion coefficient in order to secure connection reliability. The main reason was that it was required to use a mounting substrate having a relatively high thermal conductivity in order to easily radiate the generated heat to the outside. A liquid adhesive represented by a silver paste is used for mounting the semiconductor chip on such a ceramic substrate.

【0006】また、フィルム状接着剤は、フレキシブル
プリント配線板等で用いられており、アクリロニトリル
ブタジエンゴムを主成分とする系が多く用いられてい
る。プリント配線板関連材料としての検討では、吸湿後
のはんだ耐熱性を向上させたものとしては、特開昭60
−243180号公報に示されるアクリル系樹脂、エポ
キシ樹脂、ポリイソシアネート及び無機フィラーを含む
接着剤があり、また、特開昭61−138680号公報
に示されるアクリル系樹脂、エポキシ樹脂、分子中にウ
レタン結合を有する両末端が第1級アミン化合物及び無
機フィラーを含む接着剤があるが、PCT処理等の厳し
い条件下での耐湿性試験を行った場合には、劣化が大き
く不十分であった。
A film adhesive is used for a flexible printed wiring board and the like, and a system mainly containing acrylonitrile butadiene rubber is often used. In the examination of printed wiring board-related materials, as a material having improved solder heat resistance after moisture absorption, Japanese Unexamined Patent Publication No.
JP-A-243180 discloses an acrylic resin, an epoxy resin, an adhesive containing a polyisocyanate and an inorganic filler, and JP-A-61-138680 discloses an acrylic resin, an epoxy resin, and a urethane in the molecule. Although there is an adhesive containing a primary amine compound and an inorganic filler at both ends having a bond, when subjected to a moisture resistance test under severe conditions such as PCT treatment, deterioration was large and insufficient.

【0007】[0007]

【発明が解決しようとする課題】セラミック基板への半
導体チップ実装に銀ペースト接着剤を使用すると、銀フ
ィラーの沈降があるため分散が均一ではないこと、ペー
ストの保存安定性に留意しなければならないこと、半導
体チップ実装の作業性がLOC等に比較して劣ることな
どの問題があった。また、フィルム状接着剤は、アクリ
ロニトリルブタジエンゴムを主成分とする系が多く用い
られているものの、高温で長時間処理した後の接着力の
低下が大きいことや、耐電食性に劣ることなどの欠点が
あった。特に、半導体関連部品の信頼性評価で用いられ
ているPCT(プレッシャークッカーテスト)処理等の
厳しい条件下で耐湿性試験を行った場合には、劣化が大
きく不十分であった。
When a silver paste adhesive is used for mounting a semiconductor chip on a ceramic substrate, attention must be paid to the fact that the silver filler is settled and the dispersion is not uniform because of the sedimentation of the silver filler and the storage stability of the paste. In addition, there has been a problem that workability of semiconductor chip mounting is inferior to LOC or the like. In addition, although film-based adhesives are mainly composed of acrylonitrile-butadiene rubber as a main component, there are disadvantages such as a large decrease in adhesive strength after long-time treatment at high temperatures and inferior electric corrosion resistance. was there. In particular, when a moisture resistance test was performed under severe conditions such as a PCT (pressure cooker test) process used for reliability evaluation of semiconductor-related components, deterioration was large and insufficient.

【0008】これらの接着剤を用いて半導体チップをプ
リント配線板に実装する場合には、半導体チップとプリ
ント配線板の熱膨張係数の差が大きくリフロー時にクラ
ックが発生するために使用できなかった。また、温度サ
イクルテストやPCT処理等の厳しい条件下での耐湿性
試験を行った場合の劣化が大きく、使用できなかった。
本発明は、ガラスエポキシ基板やフレキシブル基板等の
プリント配線板に熱膨張係数の差が大きい半導体チップ
を実装する場合に必要な低弾性、耐熱性、耐電食性、耐
湿性を有し、特に、PCT処理等、厳しい条件下での耐
湿性試験を行った場合の接着力の低下が小さくなる電子
部品用接着剤、接着フィルム及びこれらを用いた半導体
装置を提供するものである。
When a semiconductor chip is mounted on a printed wiring board using these adhesives, the semiconductor chip and the printed wiring board cannot be used because of a large difference in the coefficient of thermal expansion between them and the occurrence of cracks during reflow. Further, when a humidity resistance test under severe conditions such as a temperature cycle test or a PCT treatment was performed, the deterioration was large and the device could not be used.
The present invention has low elasticity, heat resistance, electrolytic corrosion resistance, and moisture resistance required when a semiconductor chip having a large difference in thermal expansion coefficient is mounted on a printed wiring board such as a glass epoxy board or a flexible board. An object of the present invention is to provide an adhesive for electronic components, an adhesive film, and a semiconductor device using the same, in which a decrease in adhesive strength when a moisture resistance test is performed under severe conditions such as processing is reduced.

【0009】[0009]

【課題を解決するための手段】本発明は、グリシジル
(メタ)アクリレート2〜6重量%を含むガラス転移温
度(Tg)が−50〜120℃でかつ重量平均分子量が
400,000〜2,000,000であるエポキシ基
含有アクリル系共重合体からなる電子部品用接着剤、接
着フィルム及びこれらを用いた半導体装置に関する。
According to the present invention, a glass transition temperature (Tg) containing 2 to 6% by weight of glycidyl (meth) acrylate is -50 to 120 ° C. and a weight average molecular weight is 400,000 to 2,000. The present invention relates to an adhesive for electronic components, an adhesive film comprising an epoxy group-containing acrylic copolymer of 2,000, and a semiconductor device using the same.

【0010】本発明においては、動的粘弾性測定装置を
用いて測定した場合の電子部品用接着剤の貯蔵弾性率が
25℃で10〜2000MPa、150℃で0.1〜5
0MPaであることが好ましい。
In the present invention, the storage elastic modulus of the adhesive for electronic parts as measured using a dynamic viscoelasticity measuring device is 10 to 2000 MPa at 25 ° C. and 0.1 to 5 at 150 ° C.
It is preferably 0 MPa.

【0011】本発明においては、無機フィラーが電子部
品用接着剤100体積部に対して2〜20体積部含まれ
ることが好ましく、無機フィラーがアルミナまたはシリ
カであることがより好ましい。
In the present invention, the inorganic filler is preferably contained in an amount of 2 to 20 parts by volume with respect to 100 parts by volume of the adhesive for electronic components, and more preferably the inorganic filler is alumina or silica.

【0012】[0012]

【発明の実施の形態】本発明の接着剤に使用されるグリ
シジル(メタ)アクリレート2〜6重量%を含むガラス
転移温度(Tg)が−50〜120℃でかつ重量平均分
子量が400,000〜2,000,000であるエポ
キシ基含有アクリル系共重合体は、帝國化学産業社から
商品名HTR−860P−3として市販されている。ま
た、官能基モノマーとして用いるグリシジル(メタ)ア
クリレートの量は、2〜6重量%の共重合体比とされ、
2〜5重量%が好ましい。共重合体比が2重量%未満で
あると、所望の接着力が得られず、6重量%をこえると
ゴムのゲル化が起こりやすい。。そのほかにエチル(メ
タ)アクリレート、ブチル(メタ)アクリレートなどの
(メタ)アクリル酸エステルまたはこれらの混合物を用
いることができるが、混合比率は、共重合体のTgを考
慮して決定する。ガラス転移温度(Tg)は−50〜1
20℃とされ、−50〜100℃であることが好まし
い。Tgが−50℃未満であると、接着フィルムのタッ
ク性が大きくなり取扱性が悪化し、また、120℃を超
える、と接着フィルムの可撓性の不足や接着力の低下す
る。重合方法はパール重合、溶液重合等が挙げられ、こ
れらにより得ることができる。
DETAILED DESCRIPTION OF THE INVENTION The glass transition temperature (Tg) containing 2 to 6% by weight of glycidyl (meth) acrylate used in the adhesive of the present invention is -50 to 120 DEG C. and the weight average molecular weight is 400,000 to 4,000. An epoxy group-containing acrylic copolymer having a concentration of 2,000,000 is commercially available from Teikoku Chemical Industry Co., Ltd. under the trade name HTR-860P-3. The amount of glycidyl (meth) acrylate used as the functional group monomer is a copolymer ratio of 2 to 6% by weight,
2-5% by weight is preferred. If the copolymer ratio is less than 2% by weight, a desired adhesive strength cannot be obtained, and if it exceeds 6% by weight, rubber gelation is likely to occur. . In addition, (meth) acrylates such as ethyl (meth) acrylate and butyl (meth) acrylate or a mixture thereof can be used, but the mixing ratio is determined in consideration of the Tg of the copolymer. Glass transition temperature (Tg) is -50 to 1
The temperature is set to 20 ° C, and preferably from -50 to 100 ° C. If the Tg is lower than -50 ° C, the tackiness of the adhesive film is increased and the handling property is deteriorated. If it exceeds 120 ° C, the flexibility of the adhesive film is insufficient and the adhesive strength is reduced. Examples of the polymerization method include pearl polymerization, solution polymerization, and the like, which can be obtained.

【0013】本発明に用いるエポキシ基含有アクリル系
共重合体の重量平均分子量は400,000〜2,00
0,000とされ、600,000〜1,500,00
0であることが好ましい。エポキシ基含有アクリル系共
重合体の重量平均分子量が400,000未満であると
シート状、フィルム状での強度が低下し、タック性が大
きくなり、また、2,000,000を超えると可撓性
が低下する。
The weight average molecular weight of the epoxy group-containing acrylic copolymer used in the present invention is from 400,000 to 2,000.
000, and 600,000 to 1,500,00
It is preferably 0. When the weight average molecular weight of the epoxy group-containing acrylic copolymer is less than 400,000, the strength in the form of a sheet or a film is reduced, and the tackiness is increased. When the weight average molecular weight is more than 2,000,000, it is flexible. Is reduced.

【0014】本発明に用いる接着剤には、異種材料間の
界面結合をよくするために、カップリング剤を配合する
こともできる。カップリング剤としては、シランカップ
リング剤が好ましい。シランカップリング剤としては、
γ−グリシドキシプロピルトリメトキシシラン、γ−メ
ルカプトプロピルトリメトキシシラン、γ−アミノプロ
ピルトリエトキシシラン、γ−ウレイドプロピルトリエ
トキシシラン、N−β−アミノエチル−γ−アミノプロ
ピルトリメトキシシラン等が挙げられる。
The adhesive used in the present invention may contain a coupling agent in order to improve the interfacial bonding between different materials. As the coupling agent, a silane coupling agent is preferable. As a silane coupling agent,
γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, N-β-aminoethyl-γ-aminopropyltrimethoxysilane, etc. No.

【0015】前記したシランカップリング剤は、γ−グ
リシドキシプロピルトリメトキシシランがNCU A−
187、γ−メルカプトプロピルトリメトキシシランが
NCU A−189、γ−アミノプロピルトリエトキシ
シランがNCU A−1100、γ−ウレイドプロピル
トリエトキシシランがNCU A−1160、N−β−
アミノエチル−γ−アミノプロピルトリメトキシシラン
がNCU A−1120という商品名で、日本ユニカ−
社から市販されており、好適に使用することができる。
カップリング剤の配合量は、添加による効果や耐熱性及
びコストから、上記のアクリル系共重合体100重量部
に対し0.1〜10重量部とするのが好ましい。
The above-mentioned silane coupling agent is such that γ-glycidoxypropyltrimethoxysilane is NCU A-
187, γ-mercaptopropyltrimethoxysilane is NCU A-189, γ-aminopropyltriethoxysilane is NCU A-1100, γ-ureidopropyltriethoxysilane is NCU A-1160, N-β-
Aminoethyl-γ-aminopropyltrimethoxysilane is trade name NCU A-1120 under the trade name Nippon Unicar
It is commercially available from the company and can be suitably used.
The amount of the coupling agent to be added is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the above-mentioned acrylic copolymer in view of the effect of the addition, heat resistance and cost.

【0016】さらに、イオン性不純物を吸着して、吸湿
時の絶縁信頼性をよくするために、イオン捕捉剤を配合
することができる。イオン捕捉剤の配合量は、添加によ
る効果や耐熱性、コストより、5〜10重量部が好まし
い。イオン捕捉剤としては、銅がイオン化して溶け出す
のを防止するため銅害防止剤として知られる化合物、例
えば、トリアジンチオール化合物、ビスフェノール系還
元剤を配合することもできる。ビスフェノール系還元剤
としては、2,2’−メチレンビス(6−t−ブチル−
4−メチルフェノール)、4,4’−チオビス(6−t
−ブチル−3−メチルフェノール)等が挙げられる。ト
リアジンチオール化合物を成分とする銅害防止剤は、三
協製薬社から、ジスネットDBの商品名で市販されてい
る。またビスフェノール系還元剤を成分とする銅害防止
剤は、吉富製薬から、ヨシノックスBBの商品名で市販
されている。
Further, an ion scavenger can be blended to adsorb ionic impurities and improve insulation reliability at the time of moisture absorption. The compounding amount of the ion scavenger is preferably 5 to 10 parts by weight in view of the effect, heat resistance and cost of the addition. As the ion scavenger, a compound known as a copper harm inhibitor, for example, a triazine thiol compound or a bisphenol-based reducing agent for preventing ionization and dissolution of copper can also be blended. As the bisphenol-based reducing agent, 2,2′-methylenebis (6-t-butyl-
4-methylphenol), 4,4'-thiobis (6-t
-Butyl-3-methylphenol) and the like. A copper damage inhibitor containing a triazine thiol compound as a component is commercially available from Sankyo Pharmaceutical Co., Ltd. under the trade name of Disnet DB. Further, a copper damage inhibitor containing a bisphenol-based reducing agent as a component is commercially available from Yoshitomi Pharmaceutical under the trade name Yoshinox BB.

【0017】さらに、接着剤の取扱い性や熱伝導性を良
くすること、難燃性を与えること、溶融粘度を調整する
こと、チクソトロピック性を付与すること、表面硬度の
向上などを目的として、無機フィラーを電子部品用接着
剤100体積部に対して2〜20体積部含むことが好ま
しい。無機フィラーの配合量が2体積部未満であると、
配合の効果表れない傾向があり、また20体積部を超え
ると、接着剤の貯蔵弾性率の上昇、接着性の低下、ボイ
ド残存による電気特性の低下などの問題を起こす傾向が
ある。
Further, for the purpose of improving the handleability and thermal conductivity of the adhesive, imparting flame retardancy, adjusting the melt viscosity, imparting thixotropic properties, improving the surface hardness, etc. It is preferable to include 2 to 20 parts by volume of the inorganic filler with respect to 100 parts by volume of the adhesive for electronic components. When the amount of the inorganic filler is less than 2 parts by volume,
When the content exceeds 20 parts by volume, problems such as an increase in storage modulus of the adhesive, a decrease in adhesiveness, and a decrease in electrical properties due to remaining voids tend to occur.

【0018】無機フィラーとしては、水酸化アルミニウ
ム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネ
シウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化
カルシウム、酸化マグネシウム、アルミナ粉末、窒化ア
ルミニウム粉末、ほう酸アルミウイスカ、窒化ホウ素粉
末、結晶性シリカ、非晶性シリカなどが挙げられる。熱
伝導性をよくするためには、アルミナ、窒化アルミニウ
ム、窒化ホウ素、結晶性シリカ、非晶性シリカ等が好ま
しい。
Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina powder, aluminum nitride powder, aluminum borate whisker, and boron nitride powder. , Crystalline silica, amorphous silica and the like. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica, and the like are preferable.

【0019】この内、アルミナは、放熱性が良く、耐熱
性、絶縁性が良好な点で好適である。また、結晶性シリ
カまたは非晶性シリカは、放熱性の点ではアルミナより
劣るが、イオン性不純物が少ないため、PCT処理時の
絶縁性が高く、銅箔、アルミ線、アルミ板等の腐食が少
ない点で好適である。また難燃性を与えるためには、水
酸化アルミニウム、水酸化マグネシウム等が好ましい。
溶融粘度の調整やチクソトロピック性の付与の目的に
は、水酸化アルミニウム、水酸化マグネシウム、炭酸カ
ルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ
酸マグネシウム、酸化カルシウム、酸化マグネシウム、
アルミナ、結晶性シリカ、非晶性シリカ等が好ましい。
表面硬度の向上に関しては、短繊維アルミナ、ほう酸ア
ルミウイスカ等が好ましい。
Of these, alumina is preferred because it has good heat dissipation and good heat resistance and insulation properties. In addition, crystalline silica or amorphous silica is inferior to alumina in terms of heat dissipation, but has less ionic impurities, so it has high insulation properties during PCT processing, and corrodes copper foil, aluminum wires, aluminum plates, etc. It is suitable in that it has few points. In order to impart flame retardancy, aluminum hydroxide, magnesium hydroxide and the like are preferable.
For the purpose of adjusting the melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide,
Alumina, crystalline silica, amorphous silica and the like are preferred.
For improving the surface hardness, short fiber alumina, aluminum borate whisker and the like are preferable.

【0020】本発明に用いるワニス化の溶剤は、比較的
低沸点の、メチルエチルケトン、アセトン、メチルイソ
ブチルケトン、2−エトキシエタノール、トルエン、ブ
チルセルソルブ、メタノール、エタノール、2−メトキ
シエタノールなどを用いるのが好ましい。また、塗膜性
を向上するなどの目的で、高沸点溶剤を加えても良い。
高沸点溶剤としては、ジメチルアセトアミド、ジメチル
ホルムアミド、メチルピロリドン、シクロヘキサノンな
どが挙げられる。
As the varnishing solvent used in the present invention, use is made of, for example, methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol and 2-methoxyethanol having a relatively low boiling point. Is preferred. Further, a high boiling point solvent may be added for the purpose of improving the coating properties.
Examples of the high boiling point solvent include dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.

【0021】ワニスの製造は、無機フィラーの分散を考
慮した場合には、らいかい機、3本ロール及びビーズミ
ル等により、またこれらを組み合わせて行なうことがで
きる。フィラーと低分子量物をあらかじめ混合した後、
高分子量物を配合することにより、混合に要する時間を
短縮することも可能となる。また、ワニスとした後、真
空脱気によりワニス中の気泡を除去することが好まし
い。本発明の接着フィルムは、キャリアーフィルム上に
接着剤ワニスを塗布し、加熱乾燥して溶剤を除去するこ
とにより接着剤成分のみの接着フィルムを得ることがで
きる。
The production of the varnish can be carried out by using a mill, a three-roll mill, a bead mill, etc., or a combination thereof, in consideration of the dispersion of the inorganic filler. After pre-mixing the filler and low molecular weight material,
By blending a high molecular weight substance, the time required for mixing can be reduced. After the varnish is formed, it is preferable to remove bubbles in the varnish by vacuum degassing. The adhesive film of the present invention can be obtained by applying an adhesive varnish on a carrier film and drying by heating to remove the solvent, whereby an adhesive film containing only the adhesive component can be obtained.

【0022】本発明の接着剤の動的粘弾性測定装置で測
定した貯蔵弾性率は、25℃で10〜2000MPa
で、150℃で0.1〜50MPaと低弾性であること
が好ましく、25℃で100〜1000MPaで、15
0℃で1〜30MPaであることがより好ましい。貯蔵
弾性率の測定は、接着剤硬化物に引張り荷重をかけて、
周波数10Hz、昇温速度3〜10℃/分で−50℃か
ら300℃まで測定する温度依存性測定モードで行って
いる。25℃での貯蔵弾性率が2000MPaを超える
ものでは、はんだリフロー時に発生する半導体チップと
リードフレーム間の熱応力を緩和させる効果が小さくな
るためパッケージクラックを発生する傾向がある。一
方、貯蔵弾性率が10MPa未満では、接着剤の取り扱
い性が悪くなる傾向がある。また150℃での貯蔵弾性
率が50MPaを超えるものでは、はんだリフロー時に
発生する半導体チップとリードフレーム間の熱応力を緩
和させる効果が小さくなるためパッケージクラックを発
生する傾向がある。0.1MPa未満では、接着剤の取
り扱い性が悪くなる傾向がある。本発明では、フィラー
を添加することにより、溶融粘度が大きくでき、さらに
チクソトロピック性を発現できるために、前記効果をさ
らに大きくすることが可能となる。
The storage elastic modulus of the adhesive measured by the dynamic viscoelasticity measuring apparatus of the present invention is 10 to 2000 MPa at 25 ° C.
It is preferable that the elasticity is as low as 0.1 to 50 MPa at 150 ° C.
More preferably, it is 1 to 30 MPa at 0 ° C. To measure the storage modulus, apply a tensile load to the cured adhesive,
The measurement is performed in a temperature-dependent measurement mode in which measurement is performed from -50 ° C to 300 ° C at a frequency of 10 Hz and a heating rate of 3 to 10 ° C / min. If the storage elastic modulus at 25 ° C. exceeds 2000 MPa, the effect of relieving the thermal stress between the semiconductor chip and the lead frame generated at the time of solder reflow becomes small, so that a package crack tends to occur. On the other hand, if the storage elastic modulus is less than 10 MPa, the handleability of the adhesive tends to be poor. If the storage elastic modulus at 150 ° C. exceeds 50 MPa, package cracks tend to occur because the effect of relaxing thermal stress between the semiconductor chip and the lead frame generated during solder reflow is reduced. If the pressure is less than 0.1 MPa, the handleability of the adhesive tends to deteriorate. In the present invention, by adding a filler, the melt viscosity can be increased, and the thixotropic property can be further exhibited, so that the above-mentioned effect can be further enhanced.

【0023】さらに、前記の効果に加えて、接着剤の放
熱性向上、接着剤に難燃性を付与、接着時の温度におい
て適正な粘度をもたせること、表面硬度の向上等の特性
も付与できる。
Further, in addition to the above-mentioned effects, it is possible to impart properties such as improvement in heat dissipation of the adhesive, imparting flame retardancy to the adhesive, imparting an appropriate viscosity at the temperature at the time of bonding, and improving surface hardness. .

【0024】前記のとおり、本発明の接着フィルムは、
接着剤の各成分を溶剤に溶解ないし分散してワニスと
し、キャリアーフィルム上に塗布、加熱し溶剤を除去す
ることにより得ることができる。このとき用いられるキ
ャリアーフィルムとしては、ポリテトラフルオロエチレ
ンフィルム、ポリエチレンテレフタレートフィルム、離
型処理したポリエチレンテレフタレートフィルム、ポリ
エチレンフィルム、ポリプロピレンフィルム、ポリメチ
ルペンテンフィルム、ポリイミドフィルム等が使用でき
る。キャリアーフィルムは使用時に剥離して接着フィル
ムのみを使用することもできるし、キャリアーフィルム
とともに使用し、後で除去することもできる。前記のキ
ャリアーフィルムとしては、例えば、カプトン(東レ、
デュポン社製、商品名)、アピカル(鐘淵化学工業製、商
品名)等のポリイミドフィルム、ルミラー(東レ、デュポ
ン社製、商品名)、ピューレックス(帝人製、商品名)等
のポリエチレンテレフタレートフィルム等を使用するこ
とができる。また、接着剤を基材となる耐熱性フィルム
の両面に形成することにより3層構造の接着フィルムを
得ることができる。接着剤の厚みは、2〜150μmの
範囲で用いられ、これより薄いと接着性や熱応力緩和効
果に乏しく、厚いと経済的でなくなるが、特に制限され
るものではない。塗工方法は特に制限はないが、例え
ば、コンマコート、ロールコート、リバースロールコー
ト、グラビアコート、バーコート等が挙げられる。
As described above, the adhesive film of the present invention comprises:
It can be obtained by dissolving or dispersing each component of the adhesive in a solvent to form a varnish, coating it on a carrier film, heating and removing the solvent. As the carrier film used at this time, a polytetrafluoroethylene film, a polyethylene terephthalate film, a release-treated polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film and the like can be used. The carrier film can be peeled off at the time of use to use only the adhesive film, or used together with the carrier film and removed later. As the carrier film, for example, Kapton (Toray,
Polyimide films such as DuPont (product name), Apical (Kanebuchi Chemical Co., trade name), polyethylene terephthalate films such as Lumirror (Toray, manufactured by Dupont, trade name), Purex (Teijin, trade name) Etc. can be used. Further, by forming an adhesive on both sides of a heat-resistant film serving as a substrate, an adhesive film having a three-layer structure can be obtained. The thickness of the adhesive is used in the range of 2 to 150 μm. If the thickness is smaller than this, the adhesiveness and the effect of relaxing thermal stress are poor, and if it is thicker, it is not economical, but it is not particularly limited. The coating method is not particularly limited, and examples thereof include a comma coat, a roll coat, a reverse roll coat, a gravure coat, and a bar coat.

【0025】以上、説明した本発明の電子部品用接着
剤、接着フィルムを用いることにより、信頼性、生産性
に優れた半導体装置が提供される。
By using the above-described adhesive and film for electronic parts of the present invention, a semiconductor device having excellent reliability and productivity can be provided.

【0026】[0026]

【実施例】以下実施例により本発明をさらに詳しく説明
する。 (実施例1)エポキシ基含有アクリル系共重合体として
エポキシ基含有アクリルゴム(分子量1,000,00
0、帝國化学産業社製、HTR−860P−3)にシク
ロヘキサノンを加えて撹拌溶解し、真空脱気した。得ら
れたワニスを厚さ50μmの表面処理を施したポリエチ
レンテレフタレート上に塗布し、140℃で5分間加熱
乾燥して、膜厚が50μmの塗膜を形成し、電子部品用
接着フィルムを作製した。得られた電子部品用接着フィ
ルムの貯蔵弾性率を動的粘弾性測定装置を用いて測定し
た結果、25℃で220MPa、150℃で1MPaで
あった。
The present invention will be described in more detail with reference to the following examples. Example 1 An epoxy-containing acrylic rubber (molecular weight: 1,000,000) was used as an epoxy-containing acrylic copolymer.
0, cyclohexanone was added to HTR-860P-3) (manufactured by Teikoku Chemical Industry Co., Ltd.), and the mixture was dissolved by stirring, followed by vacuum degassing. The obtained varnish was applied on a 50 μm-thick surface-treated polyethylene terephthalate, and dried by heating at 140 ° C. for 5 minutes to form a 50 μm-thick coating film, thereby producing an adhesive film for electronic parts. . The storage elastic modulus of the obtained adhesive film for electronic parts was measured using a dynamic viscoelasticity measuring apparatus, and as a result, it was 220 MPa at 25 ° C. and 1 MPa at 150 ° C.

【0027】(実施例2)実施例1で作製した接着フィ
ルムを厚さ50μmの表面処理を施したポリイミドフィ
ルムの両面に真空ラミネータを用いて、ラミネータロー
ル温度80℃、送り速度0.2m/分、線圧5kgのラ
ミネート条件で貼り合わせることにより三層構造の両面
接着フィルムを作製した。得られた電子部品用接着剤の
貯蔵弾性率を動的粘弾性測定装置を用いて測定した結
果、25℃で220MPa、150℃で1MPaであっ
た。
Example 2 A laminator roll temperature of 80 ° C. and a feed rate of 0.2 m / min were applied to both surfaces of a 50 μm-thick surface-treated polyimide film of the adhesive film produced in Example 1 using a vacuum laminator. By laminating under a lamination condition of a linear pressure of 5 kg, a double-sided adhesive film having a three-layer structure was produced. As a result of measuring the storage elastic modulus of the obtained adhesive for electronic components using a dynamic viscoelasticity measuring device, it was 220 MPa at 25 ° C. and 1 MPa at 150 ° C.

【0028】(実施例3)エポキシ基含有アクリル系共
重合体としてエポキシ基含有アクリルゴム(分子量1,
000,000、帝國化学産業社製、HTR−860P
−3)100体積部、無機フィラーとしてシリカフィラ
ー(龍森社製、SO−25R)10体積部からなる組成
物に、シクロヘキサノンを加えて撹拌混合し、真空脱気
した。得られたワニスを厚さ50μmの表面処理を施し
たポリエチレンテレフタレート上に塗布し、140℃で
5分間加熱乾燥して、膜厚が50μmの塗膜を形成し、
接着フィルムを作製した。得られた電子部品用接着フィ
ルムの貯蔵弾性率を動的粘弾性測定装置を用いて測定し
た結果、25℃で800MPa、150℃で15MPa
であった。
Example 3 As an epoxy-containing acrylic copolymer, an epoxy-containing acrylic rubber (having a molecular weight of 1,
HTR-860P, manufactured by Teikoku Chemical Industry Co., Ltd.
-3) Cyclohexanone was added to a composition composed of 100 parts by volume and 10 parts by volume of a silica filler (manufactured by Tatsumori Co., SO-25R) as an inorganic filler, mixed with stirring, and degassed under vacuum. The resulting varnish was applied on a 50 μm-thick surface-treated polyethylene terephthalate, and dried by heating at 140 ° C. for 5 minutes to form a 50 μm-thick coating film.
An adhesive film was produced. The storage elastic modulus of the obtained adhesive film for electronic parts was measured using a dynamic viscoelasticity measuring apparatus, and as a result, 800 MPa at 25 ° C. and 15 MPa at 150 ° C.
Met.

【0029】(実施例4)実施例3で作製した接着フィ
ルムを厚さ50μmの表面処理を施したポリイミドフィ
ルムの両面に真空ラミネータを用いて、ラミネータロー
ル温度80℃、送り速度0.2m/分、線圧5kgのラ
ミネート条件で貼り合わせることにより三層構造の両面
接着フィルムを作製した。得られた電子部品用接着剤の
貯蔵弾性率を動的粘弾性測定装置を用いて測定した結
果、25℃で800MPa、150℃で15MPaであ
った。
Example 4 A laminator roll temperature of 80 ° C. and a feed rate of 0.2 m / min were applied to both surfaces of a 50 μm-thick surface-treated polyimide film of the adhesive film produced in Example 3 using a vacuum laminator. By laminating under a lamination condition of a linear pressure of 5 kg, a double-sided adhesive film having a three-layer structure was produced. As a result of measuring the storage elastic modulus of the obtained adhesive for electronic components using a dynamic viscoelasticity measuring device, it was 800 MPa at 25 ° C. and 15 MPa at 150 ° C.

【0030】(比較例1)実施例1のエポキシ基含有ア
クリル系共重合体をアクリロニトリルブタジエンゴム
(日本ゼオン社製、Nipol1432J)に変更した以外は、実
施例1と同様にして接着フィルムを作製した。得られた
電子部品用接着フィルムの貯蔵弾性率を動的粘弾性測定
装置を用いて測定した結果、25℃で340MPa、1
50℃で5MPaであった。
Comparative Example 1 An adhesive film was prepared in the same manner as in Example 1 except that the epoxy group-containing acrylic copolymer of Example 1 was changed to acrylonitrile butadiene rubber (Nipol1432J, manufactured by Zeon Corporation). . The storage elastic modulus of the obtained adhesive film for electronic parts was measured using a dynamic viscoelasticity measurement apparatus.
It was 5 MPa at 50 ° C.

【0031】得られた接着フィルムについて、耐電食
性、耐湿性を調べた。耐電食性の評価は、FR−4基板
にライン/スペース=75/75μmのくし形パターン
を形成し、この上に接着フィルムを貼り合わせたサンプ
ルを作製し、85℃/85%RH/DC6V印加の条件
下で1,000時間後の絶縁抵抗値を測定することによ
り行った。絶縁抵抗値が109Ω以上を示したものを良
好とし、109Ω未満であったものを不良とした。ま
た、耐湿性評価は、半導体チップとプリント配線板を接
着フィルムで張り合わせたサンプルをプレッシャークッ
カーテスト中で96時間処理(PCT処理)後、接着フ
ィルムの剥離及び変色を観察することにより行った。接
着フィルムの剥離及び変色の認められなかったものを良
好とし、剥離のあったもの又は変色のあったものを不良
とした。その結果を表1に示す。
The obtained adhesive film was examined for electric corrosion resistance and moisture resistance. For the evaluation of the electrolytic corrosion resistance, a sample in which a comb pattern of line / space = 75/75 μm was formed on an FR-4 substrate and an adhesive film was bonded thereon was prepared, and 85 ° C./85% RH / DC 6 V was applied. The measurement was performed by measuring the insulation resistance value after 1,000 hours under the conditions. Those having an insulation resistance value of 109Ω or more were evaluated as good, and those having an insulation resistance of less than 109Ω were evaluated as defective. The moisture resistance was evaluated by observing peeling and discoloration of the adhesive film after 96 hours (PCT treatment) of a sample in which a semiconductor chip and a printed wiring board were bonded with an adhesive film in a pressure cooker test for 96 hours. A film in which no peeling or discoloration of the adhesive film was observed was regarded as good, and a film in which peeling or discoloration was observed was regarded as defective. Table 1 shows the results.

【0032】[0032]

【表1】 [Table 1]

【0033】実施例1〜4で作製した接着フィルムは、
いずれも接着剤成分に本発明におけるエポキシ基含有ア
クリル系共重合体を用いており、本発明で規定した25
℃及び150℃での貯蔵弾性率を示している。これら
は、取り扱い性及び、貼り付け作業性に優れ、また、こ
れを用いて作製した半導体装置は、耐電食性、耐PCT
性が良好であった。
The adhesive films produced in Examples 1 to 4
In each case, the epoxy group-containing acrylic copolymer of the present invention is used as an adhesive component,
The storage elastic modulus at 150C and 150C is shown. These are excellent in handleability and sticking workability, and the semiconductor device manufactured by using them is excellent in electric corrosion resistance, PCT resistance.
The properties were good.

【0034】比較例1で作製した接着フィルムは、本発
明におけるエポキシ基含有アクリル系共重合体を用いず
に規定した25℃での貯蔵弾性率に合わせていたため
に、これを用いて作製した半導体装置は、耐電食性、耐
PCT性に劣る結果を表1に示した。
The adhesive film produced in Comparative Example 1 was adjusted to the specified storage elastic modulus at 25 ° C. without using the epoxy group-containing acrylic copolymer of the present invention, and thus the semiconductor film produced using this was used. Table 1 shows the results of the apparatus, which are inferior in the corrosion resistance and the PCT resistance.

【0035】[0035]

【発明の効果】以上説明したように、本発明の電子部品
用接着剤及び接着フィルムは、室温付近での弾性率が低
いために、ガラスエポキシ基板やポリイミド基板に代表
されるリジッドプリント配線板及びフレキシブルプリン
ト配線板に半導体チップを実装した場合の熱膨張係数の
差がもとで起きる加熱冷却時の熱応力を緩和させること
ができる。また、耐電食性、耐湿性、特にPCT処理等
厳しい条件下で耐湿試験を行った場合の劣化が少なく、
優れた特徴を有する接着材料 及びこれらを用いた半導
体装置を提供することができる。
As described above, the adhesive and the adhesive film for electronic parts of the present invention have a low elastic modulus near room temperature, so that rigid printed wiring boards represented by glass epoxy substrates and polyimide substrates and Thermal stress at the time of heating and cooling caused by a difference in thermal expansion coefficient when a semiconductor chip is mounted on a flexible printed wiring board can be reduced. In addition, there is little deterioration when performing a moisture resistance test under severe conditions such as electric corrosion resistance and moisture resistance, particularly PCT processing,
An adhesive material having excellent characteristics and a semiconductor device using the same can be provided.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 細川 羊一 千葉県市原市五井南海岸14番地 日立化成 工業株式会社五井工場内 (72)発明者 桐原 博 千葉県市原市五井南海岸14番地 日立化成 工業株式会社五井工場内 (72)発明者 飯岡 真志 千葉県市原市五井南海岸14番地 日立化成 工業株式会社五井工場内 (72)発明者 柳沢 諭 千葉県市原市五井南海岸14番地 日立化成 工業株式会社五井工場内 (72)発明者 島田 靖 茨城県下館市大字1500番地 日立化成工業 株式会社下館研究所内 Fターム(参考) 4J004 AA10 AA13 AB05 CA04 CA06 CB03 CC02 EA01 FA05 4J040 DF061 EC231 HA136 HA196 HA206 HA296 HA326 HB03 HB08 HB18 JA09 JB02 KA24 LA06 MB03 NA20 5F047 BA21 BA32 BA54  ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Youichi Hosokawa 14 Goi South Coast, Ichihara City, Chiba Prefecture Inside the Goi Plant of Hitachi Chemical Co., Ltd. Inside the Goi Plant of Kogyo Co., Ltd. (72) Inventor Masashi Iioka 14 Goi South Coast, Ichihara-shi, Chiba Hitachi Chemical Co., Ltd. (72) Inventor Yasushi Shimada 1500 Shitadate-shi, Ibaraki Pref.Hitachi Kasei Kogyo Co., Ltd. Shimodate Research Laboratories F-term (reference) HB08 HB18 JA09 JB02 KA24 LA06 MB03 NA20 5F047 BA21 BA32 BA54

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 グリシジル(メタ)アクリレート2〜6
重量%を含むガラス転移温度(Tg)が−50〜120
℃でかつ重量平均分子量が400,000〜2,00
0,000であるエポキシ基含有アクリル系共重合体か
らなる電子部品用接着剤。
1. Glycidyl (meth) acrylates 2 to 6
The glass transition temperature (Tg) including wt% is -50 to 120
C. and a weight average molecular weight of 400,000 to 2,000.
An adhesive for electronic components comprising an epoxy group-containing acrylic copolymer having a molecular weight of 000.
【請求項2】 動的粘弾性測定装置を用いて測定した場
合の貯蔵弾性率が25℃で10〜2000MPa、15
0℃で0.1〜50MPaである請求項1記載の電子部
品用接着剤。
2. A storage elastic modulus measured at 25 ° C. of 10 to 2000 MPa,
2. The adhesive for electronic parts according to claim 1, wherein the adhesive is 0.1 to 50 MPa at 0C.
【請求項3】 無機フィラーが電子部品用接着剤100
体積部に対して2〜20体積部含まれる請求項1または
2に記載の電子部品用接着剤。
3. An adhesive for an electronic component, wherein the inorganic filler is 100.
The adhesive for electronic components according to claim 1, wherein the adhesive is contained in an amount of 2 to 20 parts by volume based on the volume.
【請求項4】 無機フィラーがアルミナである請求項3
に記載の電子部品用接着剤。
4. The method according to claim 3, wherein the inorganic filler is alumina.
The adhesive for electronic components according to item 1.
【請求項5】 無機フィラーがシリカである請求項3に
記載の電子部品用接着剤。
5. The electronic component adhesive according to claim 3, wherein the inorganic filler is silica.
【請求項6】 請求項1〜5のいずれか1項に記載の接
着剤層をベースフィルム上に形成して得られる接着フィ
ルム。
6. An adhesive film obtained by forming the adhesive layer according to claim 1 on a base film.
【請求項7】 請求項1〜5のいずれか1項に記載の電
子部品用接着剤を用いた半導体装置。
7. A semiconductor device using the adhesive for electronic components according to claim 1.
【請求項8】 請求項6に記載の接着フィルムを用いた
半導体装置。
8. A semiconductor device using the adhesive film according to claim 6.
JP10358534A 1998-12-17 1998-12-17 Adhesive for electronic parts, adhesive film and semiconductor device using them Pending JP2000178526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10358534A JP2000178526A (en) 1998-12-17 1998-12-17 Adhesive for electronic parts, adhesive film and semiconductor device using them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10358534A JP2000178526A (en) 1998-12-17 1998-12-17 Adhesive for electronic parts, adhesive film and semiconductor device using them

Publications (1)

Publication Number Publication Date
JP2000178526A true JP2000178526A (en) 2000-06-27

Family

ID=18459826

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2000178526A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246345A (en) * 2000-12-12 2002-08-30 Mitsui Chemicals Inc Semiconductor wafer protecting method, and adhesive film for protecting the semiconductor wafer surface used for the protection method
JP2009295620A (en) * 2008-06-02 2009-12-17 Hitachi Cable Ltd Metal-coated substrate for printed wiring board, printed wiring board, and method of manufacturing the same
JP2011081810A (en) * 2009-10-09 2011-04-21 Lg Chem Ltd Integrated touch polarizing plate and touch panel including the same
US8217275B2 (en) 2006-12-04 2012-07-10 Panasonic Corporation Sealing material and mounting method using the sealing material
JP2014055280A (en) * 2012-08-13 2014-03-27 Tokyo Ohka Kogyo Co Ltd Adhesive composition, adhesive film, and bonding method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246345A (en) * 2000-12-12 2002-08-30 Mitsui Chemicals Inc Semiconductor wafer protecting method, and adhesive film for protecting the semiconductor wafer surface used for the protection method
US8217275B2 (en) 2006-12-04 2012-07-10 Panasonic Corporation Sealing material and mounting method using the sealing material
JP2009295620A (en) * 2008-06-02 2009-12-17 Hitachi Cable Ltd Metal-coated substrate for printed wiring board, printed wiring board, and method of manufacturing the same
JP2011081810A (en) * 2009-10-09 2011-04-21 Lg Chem Ltd Integrated touch polarizing plate and touch panel including the same
JP2014055280A (en) * 2012-08-13 2014-03-27 Tokyo Ohka Kogyo Co Ltd Adhesive composition, adhesive film, and bonding method

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