JP2000165020A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2000165020A JP2000165020A JP10336369A JP33636998A JP2000165020A JP 2000165020 A JP2000165020 A JP 2000165020A JP 10336369 A JP10336369 A JP 10336369A JP 33636998 A JP33636998 A JP 33636998A JP 2000165020 A JP2000165020 A JP 2000165020A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- parts
- conductor
- weight
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はセラミック回路基板
に関するものであり、特に、基板表面に形成された導体
の少なくとも一部を絶縁膜で被覆したセラミック回路基
板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board, and more particularly, to a ceramic circuit board in which at least a part of a conductor formed on a substrate surface is covered with an insulating film.
【０００２】[0002]
【従来技術】従来、セラミック回路基板用の配線導体に
はＡｇ、Ｃｕ、Ａｕ、Ｗ、Ｍｏ等の導体が使用され、セ
ラミック回路基板の電気的絶縁性を保持するため、ある
いは基板の表面に形成された導体の保護、半田によるシ
ョート防止やマイグレーションの防止等のため、導体を
絶縁膜により被覆することが行われている。2. Description of the Related Art Conventionally, conductors such as Ag, Cu, Au, W, and Mo have been used as wiring conductors for ceramic circuit boards, and are formed on the surface of the ceramic circuit board to maintain electrical insulation. The conductor is coated with an insulating film in order to protect the conductor, prevent short circuit due to solder, prevent migration, and the like.
【０００３】例えば、セラミック回路基板においては、
大別するとアルミナ等で形成されたセラミック基板上に
上記導体をペースト化し、印刷、焼成して回路パターン
を形成し、この回路パターン上に、アルミナ、ガラス等
の絶縁性物質をペースト化し、印刷、焼成し絶縁膜を形
成した厚膜回路基板と、内部配線になる導体膜をテープ
化されたアルミナ等のセラミックで挟持、積層し、この
積層体表面の表面導体を絶縁膜で被覆し、一体焼成した
セラミック回路基板とがある。For example, in a ceramic circuit board,
Broadly speaking, the above conductor is pasted on a ceramic substrate formed of alumina or the like, printed, fired to form a circuit pattern, and an insulating material such as alumina or glass is pasted on this circuit pattern, printed, A thick-film circuit board on which an insulating film is formed by firing is sandwiched and laminated by a taped ceramic such as alumina, and a conductor film serving as an internal wiring is laminated, and the surface conductor on the surface of the laminated body is covered with an insulating film and integrally fired. Ceramic circuit boards.
【０００４】近年、低コスト化、高信頼性、高機能化の
観点から、基板材料として、低温で焼成可能なガラスセ
ラミックスや誘電体セラミックスを用い、導体材料とし
て、低い導体抵抗値を有するＡｇ、Ｃｕ等の導体を内層
導体、表面導体に用いて、表面導体の一部を絶縁膜で被
覆し、一体的に焼成してなる低温焼成セラミック回路基
板が主流となっている。In recent years, from the viewpoints of cost reduction, high reliability, and high functionality, glass ceramics and dielectric ceramics that can be fired at a low temperature are used as a substrate material, and Ag having a low conductor resistance is used as a conductor material. A low-temperature fired ceramic circuit board obtained by using a conductor such as Cu for the inner layer conductor and the surface conductor, coating a part of the surface conductor with an insulating film, and integrally firing is used.
【０００５】このセラミック回路基板に用いられる絶縁
膜には、低温で焼結する絶縁膜であること、電気的絶縁
性が確保できる絶縁膜であること、導体との接着が確保
される絶縁膜であること、焼成後の基板の反り変形の原
因にならない絶縁膜であること等が挙げられる。[0005] The insulating film used for this ceramic circuit board is an insulating film that is sintered at a low temperature, an insulating film that can secure electrical insulation, and an insulating film that ensures adhesion to a conductor. And an insulating film that does not cause warpage of the substrate after firing.
【０００６】これらの特性は、絶縁膜の焼結性に起因
し、焼結性が不良となれば、絶縁不良を発生させ、ま
た、基板や導体との収縮開始温度の差が大きくなると、
絶縁膜の剥がれや、基板の反り変形を発生させるため、
絶縁膜の構成材料や焼結性は重要な要因である。[0006] These characteristics are caused by the sinterability of the insulating film. If the sinterability becomes poor, insulation failure occurs.
In order to cause peeling of the insulating film and warpage of the substrate,
The constituent material and sinterability of the insulating film are important factors.
【０００７】低温焼成多層セラミック回路基板の基板材
料として、ＭｇＯ、ＣａＯ、ＴｉＯ2 、Ｂ2 Ｏ3 、Ｌｉ
2 ＣＯ3 からなる誘電体磁器組成物が知られている（特
開平８−２０８３３０号公報参照）。この材料は、９５
０℃以下で焼成可能であるため、Ａｇ等の導体材料を用
いることができ、低温焼成多層セラミック回路基板用の
材料として優れたものであった。As substrate materials for a low-temperature fired multilayer ceramic circuit board, MgO, CaO, TiO 2 , B 2 O 3 , Li
A dielectric porcelain composition comprising 2 CO 3 is known (see JP-A-8-208330). This material is 95
Since it can be fired at a temperature of 0 ° C. or less, a conductive material such as Ag can be used, and it is an excellent material for a low-temperature fired multilayer ceramic circuit board.
【０００８】そして、上記セラミック材料を用いて基板
用成形体を作製し、この成形体の表面に、表面導体とな
るＡｇを主成分とする導体ペーストを塗布し、この導体
ペーストの少なくとも一部を、基板用成形体のセラミッ
ク材料と同じセラミック材料からなるペーストにより被
覆し、この後、基板用の成形体、表面導体となる導体ペ
ースト、絶縁膜となるセラミックペーストを９５０℃以
下で、一体焼成し、作製することが考えられる。Then, a molded body for a substrate is prepared using the above-mentioned ceramic material, and a conductor paste mainly composed of Ag serving as a surface conductor is applied to the surface of the molded body, and at least a part of the conductor paste is applied. Then, the substrate is coated with a paste made of the same ceramic material as the ceramic material of the molded body for the substrate, and thereafter, the molded body for the substrate, the conductor paste to be the surface conductor, and the ceramic paste to be the insulating film are integrally fired at 950 ° C. or lower. , Can be considered.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上記セ
ラミック材料からなるセラミックペーストを用いて厚み
２０μｍ程度の絶縁膜を形成した場合、基板用の成形
体、表面導体となる導体ペースト、絶縁膜となるセラミ
ックペーストを９５０℃以下で一体的に焼成すると、絶
縁膜中のボイドが連続して存在することにより絶縁膜の
電気的絶縁性の劣化が生じるという問題があった。However, when an insulating film having a thickness of about 20 .mu.m is formed using a ceramic paste made of the above ceramic material, a molded body for a substrate, a conductive paste serving as a surface conductor, and a ceramic paste serving as an insulating film are formed. When the paste is integrally fired at 950 ° C. or lower, there is a problem that the electrical insulation of the insulating film is deteriorated due to continuous voids in the insulating film.
【００１０】また、焼成時における絶縁膜の収縮開始温
度が８５０℃程度と高いため、焼結における収縮開始温
度が高くとも６００℃程度の導体と絶縁膜を一体焼成し
た場合、収縮のマッチングが悪く、絶縁膜が剥がれる問
題があった。In addition, since the shrinkage start temperature of the insulating film at the time of firing is as high as about 850 ° C., if the conductor and the insulating film are sintered at about 600 ° C. at the highest in the sintering, the matching of shrinkage is poor. In addition, there is a problem that the insulating film is peeled off.
【００１１】即ち、導体として、Ａｇを主成分とするも
の、例えば、Ａｇ、Ａｇに対してガラス成分、Ｐｔ、Ｐ
ｄ等の金属を添加したものがあるが、これらの導体は、
焼成時における収縮開始温度が高くとも６００℃である
ため、絶縁膜との収縮開始温度差が大きく、これによ
り、絶縁膜が剥離するという問題があった。That is, a conductor mainly composed of Ag, for example, a glass component, Pt, P
Although there are those to which metals such as d are added, these conductors are
Since the shrinkage start temperature at the time of firing is at most 600 ° C., there is a large difference between the shrinkage start temperature and the insulating film, which causes a problem that the insulating film peels off.
【００１２】また、近年においては基板は低温で焼成さ
れるようになってきているため、このような基板と同時
焼成される表面導体についても安価なＡｇが用いられて
いるが、Ａｇが白色導体であり、また、ＭｇＯ、Ｃａ
Ｏ、ＴｉＯ2 、Ｂ2 Ｏ3 、Ｌｉ2 ＣＯ3 からなる磁器が
白色であるため、例えば、絶縁膜から露出した表面導体
に電子部品を実装する際、表面導体と絶縁膜との識別が
困難であり、表面導体に部品を実装することが困難であ
るという問題があった。In recent years, since substrates have been fired at a low temperature, inexpensive Ag is used for the surface conductor that is fired simultaneously with such a substrate. And MgO, Ca
Since the porcelain made of O, TiO 2 , B 2 O 3 , and Li 2 CO 3 is white, it is difficult to distinguish between the surface conductor and the insulating film, for example, when mounting an electronic component on the surface conductor exposed from the insulating film. However, there is a problem that it is difficult to mount the component on the surface conductor.
【００１３】本発明のセラミック回路基板は、基板表面
に形成された表面導体を被覆する絶縁膜の焼結性を向上
して絶縁膜の電気的絶縁性を向上するとともに、表面導
体と絶縁膜の焼結における収縮マッチングを良くし、表
面導体との接着を確保することを目的とする。According to the ceramic circuit board of the present invention, the sinterability of the insulating film covering the surface conductor formed on the substrate surface is improved to improve the electrical insulation of the insulating film. An object is to improve shrinkage matching in sintering and secure adhesion to a surface conductor.
【００１４】[0014]
【課題を解決するための手段】本発明のセラミック回路
基板は、Ａｇを主成分とする表面導体の少なくとも一部
を被覆する絶縁膜を有するセラミック回路基板におい
て、前記絶縁膜が、金属元素として少なくともＭｇおよ
びＴｉを含有し、これらのモル比による組成式を、（１
−ｘ）ＭｇＴｉＯ3 ・ｘＣａＴｉＯ3 と表した時、前記
ｘが０≦ｘ≦０．２を満足する主成分と、該主成分１０
０重量部に対して、ＢをＢ2 Ｏ3 換算で３〜２０重量
部、アルカリ金属をアルカリ金属炭酸塩換算で１〜１０
重量部、ＳｉをＳｉＯ2 換算で０．０１〜５重量部、ア
ルカリ土類金属をアルカリ土類金属酸化物換算で０．１
〜５重量部含有するものである。主成分１００重量部に
対して、さらにＣｏをＣｏ3 Ｏ4 換算で０．１〜５重量
部含有することが望ましい。According to the present invention, there is provided a ceramic circuit board having an insulating film covering at least a part of a surface conductor containing Ag as a main component, wherein the insulating film has at least a metal element. Mg and Ti are contained, and the composition formula based on the molar ratio of these is expressed as (1
-X) when expressed as MgTiO 3 · xCaTiO 3, a main component wherein x satisfies 0 ≦ x ≦ 0.2, the main component 10
B is 3 to 20 parts by weight in terms of B 2 O 3 and alkali metal is 1 to 10 parts by weight in terms of alkali metal carbonate with respect to 0 parts by weight.
Parts by weight, Si is 0.01 to 5 parts by weight in terms of SiO 2 , and alkaline earth metal is 0.1 in terms of alkaline earth metal oxide.
-5 parts by weight. It is desirable that Co is further contained in an amount of 0.1 to 5 parts by weight in terms of Co 3 O 4 based on 100 parts by weight of the main component.
【００１５】基板がＭｇＴｉＯ3 とＣａＴｉＯ3 を主結
晶とし、絶縁膜と前記基板が同時焼成されることが望ま
しい。It is preferable that the substrate has MgTiO 3 and CaTiO 3 as main crystals, and the insulating film and the substrate are simultaneously fired.
【００１６】[0016]
【作用】本発明のセラミック回路基板は、絶縁膜を上記
組成により形成したので、９５０℃以下で低温焼成した
場合でも、絶縁膜の焼結性が向上し、高い焼成体密度を
有する絶縁膜を得ることができ、これにより、絶縁膜の
電気的絶縁性を向上することができる。According to the ceramic circuit board of the present invention, since the insulating film is formed with the above composition, the sinterability of the insulating film is improved even when the insulating film is fired at a low temperature of 950 ° C. or lower, and the insulating film having a high fired body density can be obtained. Accordingly, the electrical insulation of the insulating film can be improved.
【００１７】また、焼成時における絶縁膜の収縮開始温
度を低下させることができるため、導体との収縮のマッ
チングが良くなり、絶縁膜と導体の接着を確保できる。Further, since the shrinkage start temperature of the insulating film during firing can be lowered, matching of shrinkage with the conductor is improved, and adhesion between the insulating film and the conductor can be secured.
【００１８】また、主成分１００重量部に対して、Ｃｏ
をＣｏ3 Ｏ4 換算で、０．１〜５重量部含有することに
より、絶縁膜の電気的絶縁性を向上し、導体との接着を
確保できるとともに、絶縁膜を青色系に着色することが
でき、Ａｇを主成分とする白色導体と絶縁膜との識別が
容易となり、表面導体への電子部品の実装が容易とな
る。Further, Co is added to 100 parts by weight of the main component.
Is contained in an amount of 0.1 to 5 parts by weight in terms of Co 3 O 4 , whereby the electrical insulation of the insulating film can be improved, adhesion to the conductor can be ensured, and the insulating film can be colored blue. This makes it easy to distinguish between the white conductor containing Ag as a main component and the insulating film, and the mounting of the electronic component on the surface conductor becomes easy.
【００１９】さらに、基板がＭｇＴｉＯ3 とＣａＴｉＯ
3 を主結晶とすることにより、絶縁膜と基板を同時焼成
した場合でも、基板の焼成時における収縮開始温度を導
体に近づけることができ、基板からの導体、絶縁膜の剥
離を防止できる。Further, the substrate is made of MgTiO 3 and CaTiO
By using 3 as the main crystal, even when the insulating film and the substrate are fired simultaneously, the shrinkage start temperature during firing of the substrate can be made closer to the conductor, and peeling of the conductor and the insulating film from the substrate can be prevented.
【００２０】[0020]
【発明の実施の形態】図１に本発明のセラミック回路基
板の一例を示すもので、図１において、符号１０はセラ
ミック回路基板であり、このセラミック回路基板１０
は、基板（積層体）１と、基板１の表面に形成された表
面導体２、基板１の内部に形成された内層導体３、ビア
ホール導体４、及び表面導体２の一部を被覆する絶縁膜
５から構成されている、基板１は、例えば、７層の絶縁
体層１ａ〜１ｇからなり、その層１ａ〜１ｇ間には内層
導体３が形成されている。また絶縁体層１ａ〜１ｇには
その厚み方向に内層導体３間を接続するため、また内層
導体３と表面導体２とを接続するためのビアホール導体
４が形成されている。FIG. 1 shows an example of a ceramic circuit board according to the present invention. In FIG. 1, reference numeral 10 denotes a ceramic circuit board.
Is a substrate (laminated body) 1, a surface conductor 2 formed on the surface of the substrate 1, an inner layer conductor 3, a via hole conductor 4 formed inside the substrate 1, and an insulating film covering a part of the surface conductor 2. The substrate 1 composed of 5 includes, for example, seven insulator layers 1a to 1g, and an inner conductor 3 is formed between the layers 1a to 1g. In the insulator layers 1a to 1g, via-hole conductors 4 for connecting the inner layer conductors 3 in the thickness direction thereof and for connecting the inner layer conductors 3 and the surface conductors 2 are formed.
【００２１】内層導体３、ビアホール導体４は、例え
ば、Ａｇ、Ｃｕ、Ａｕ等からなるもので、これらのう
ち、安価という点からＡｇを主成分とするもの、例え
ば、Ａｇからなるもの、またはＡｇを主成分とし、これ
にＰｔを添加したものが好ましい。The inner layer conductor 3 and the via hole conductor 4 are made of, for example, Ag, Cu, Au or the like. Among them, those made of Ag as a main component from the viewpoint of low cost, for example, those made of Ag or Ag Is a main component, to which Pt is added.
【００２２】表面導体２は、Ａｇからなるもの、または
Ａｇを主成分とし、これにＰｔを添加したものからな
る。The surface conductor 2 is made of Ag or a material containing Ag as a main component and Pt added thereto.
【００２３】本発明のセラミック回路基板は、基板１表
面の表面導体２の一部または全部を絶縁膜５が被覆して
いれば良く、セラミック回路基板は、内部配線、内部導
体、内部電極を有する積層体であっても良く、また、内
部に内部配線、内部導体、内部電極が形成されていなく
ても良い。The ceramic circuit board of the present invention only needs to cover a part or all of the surface conductor 2 on the surface of the substrate 1 with the insulating film 5, and the ceramic circuit board has internal wiring, internal conductors, and internal electrodes. It may be a laminate, and the internal wiring, the internal conductor, and the internal electrode may not be formed inside.
【００２４】また、基板の収縮開始温度を導体に近づ
け、導体との収縮のマッチング性を向上させる点から、
基板は、少なくともＭｇＴｉＯ3 とＣａＴｉＯ3 を含有
することが望ましく、さらに、基板と絶縁膜とが同時焼
成されることが望ましい。Further, from the viewpoint that the shrinkage starting temperature of the substrate is made closer to the conductor and the matching property of the shrinkage with the conductor is improved,
The substrate desirably contains at least MgTiO 3 and CaTiO 3 , and further desirably, the substrate and the insulating film are co-fired.
【００２５】絶縁膜は、金属元素として少なくともＭｇ
およびＴｉを含有し、これらのモル比による組成式を、
（１−ｘ）ＭｇＴｉＯ3 ・ｘＣａＴｉＯ3 と表した時、
ｘが０≦ｘ≦０．２を満足する主成分と、該主成分１０
０重量部に対して、ＢをＢ2Ｏ3 換算で３〜２０重量
部、アルカリ金属をアルカリ金属炭酸塩換算で１〜１０
重量部、ＳｉをＳｉＯ2 換算で０．０１〜５重量部、ア
ルカリ土類金属をアルカリ土類金属酸化物換算で０．１
〜５重量部含有するものである。The insulating film is made of at least Mg as a metal element.
And Ti, and a composition formula based on these molar ratios:
When expressed as (1-x) MgTiO 3 · xCaTiO 3,
a main component in which x satisfies 0 ≦ x ≦ 0.2;
B is 3 to 20 parts by weight in terms of B 2 O 3 and alkali metal is 1 to 10 parts by weight in terms of alkali metal carbonate with respect to 0 parts by weight.
Parts by weight, Si is 0.01 to 5 parts by weight in terms of SiO 2 , and alkaline earth metal is 0.1 in terms of alkaline earth metal oxide.
-5 parts by weight.
【００２６】ここで、主成分のｘを０≦ｘ≦０．２とし
たのは、ｘが０．２モルを超える場合には、焼結体の密
度が低下し，絶縁膜の電気的絶縁性が確保できなくなる
からである。とりわけ、焼結体の密度の観点からは、ｘ
は０．０３≦ｘ≦０．１３が好ましい。また、ＭｇＴｉ
Ｏ3 とＣａＴｉＯ3 において、Ｍｇ／Ｔｉ比またはＣａ
／Ｔｉ比が０．９〜１．１の範囲であれば、本発明の絶
縁膜組成の主成分として使用できる。Here, the reason why x of the main component is 0 ≦ x ≦ 0.2 is that when x exceeds 0.2 mol, the density of the sintered body is reduced and the electrical insulation of the insulating film is reduced. This is because the property cannot be secured. In particular, from the viewpoint of the density of the sintered body, x
Is preferably 0.03 ≦ x ≦ 0.13. In addition, MgTi
In O 3 and CaTiO 3 , Mg / Ti ratio or Ca
If the / Ti ratio is in the range of 0.9 to 1.1, it can be used as a main component of the insulating film composition of the present invention.
【００２７】また、主成分１００重量部に対して、Ｂを
Ｂ2 Ｏ3 換算で３〜２０重量部含有せしめたのは、Ｂが
３重量部未満の場合には１１００℃でも焼結せず、絶縁
膜の電気的絶縁性が確保できなくなり、逆に２０重量部
を超える場合には、焼結体中のガラス相の割合が増加し
て、絶縁膜と導体が接着しなくなるからである。よっ
て、焼結性を維持し、接着を確保するという観点から、
Ｂ2 Ｏ3 換算で５〜１５重量部含有することが望まし
い。Ｂ含有化合物としては、金属硼素、Ｂ2 Ｏ3 、コレ
マナイト、ＣａＢ2 Ｏ4 、ホウケイ酸ガラス、ホウケイ
酸アルカリガラス、ホウケイ酸アルカリ土類ガラス等が
ある。The reason why B is contained in an amount of 3 to 20 parts by weight in terms of B 2 O 3 with respect to 100 parts by weight of the main component is that when B is less than 3 parts by weight, sintering does not occur even at 1100 ° C. On the other hand, if the electrical insulation of the insulating film cannot be ensured, and if it exceeds 20 parts by weight, the ratio of the glass phase in the sintered body increases and the insulating film and the conductor do not adhere to each other. Therefore, from the viewpoint of maintaining sinterability and securing adhesion,
Terms of B 2 O 3 by preferably contains 5 to 15 parts by weight. Examples of the B-containing compound include metallic boron, B 2 O 3 , colemanite, CaB 2 O 4 , borosilicate glass, alkali borosilicate glass, and alkaline earth borosilicate glass.
【００２８】また、アルカリ金属をアルカリ金属炭酸塩
換算で１〜１０重量部含有したのは、含有量が１重量部
未満の場合には１１００℃でも焼結せず、絶縁膜の電気
的絶縁性が確保できなくなり、逆に１０重量部を超える
場合には、生成される結晶相が変化するため、絶縁膜と
導体が接着しなくなるからである。焼結性を維持し、接
着を確保するという観点から４〜９重量部が望ましい。
アルカリ金属としては、Ｌｉ、Ｎａ、Ｋを例示すること
ができ、この中でもＬｉが特に望ましい。アルカリ金属
含有化合物としては、上記アルカリ金属の炭酸塩、酸化
物等を例示することができる。The reason why the alkali metal is contained in an amount of 1 to 10 parts by weight in terms of the alkali metal carbonate is that if the content is less than 1 part by weight, it does not sinter even at 1100 ° C. When the amount exceeds 10 parts by weight, the generated crystal phase changes, so that the insulating film and the conductor do not adhere to each other. From the viewpoint of maintaining the sinterability and ensuring the adhesion, 4 to 9 parts by weight is desirable.
Examples of the alkali metal include Li, Na, and K, of which Li is particularly desirable. Examples of the alkali metal-containing compound include the above-mentioned alkali metal carbonates and oxides.
【００２９】さらに、ＳｉをＳｉＯ2 換算で０．０１〜
５重量部含有したのは、含有量が０．０１重量部未満の
場合には、焼成時における絶縁膜の収縮開始温度が高
く、絶縁膜と導体の収縮のマッチングが悪くなり、絶縁
膜と導体の接着が確保できないからである。一方、５重
量部を超えると、絶縁膜の密度が低下し、電気的絶縁性
が確保できなくなるからである。絶縁膜と導体の接着と
絶縁膜の密度の観点から、０．５〜３重量部が望まし
い。Ｓｉ含有化合物としては、ＳｉＯ2 、ＭｇＳｉＯ3
等がある。Further, Si is converted to SiO 2 in an amount of 0.01 to
The content of 5 parts by weight is such that if the content is less than 0.01 part by weight, the shrinkage start temperature of the insulating film during firing is high, and the matching between the insulating film and the conductor shrinks poorly. This is because the adhesiveness cannot be secured. On the other hand, if the amount exceeds 5 parts by weight, the density of the insulating film decreases, and electrical insulation cannot be ensured. From the viewpoint of the adhesion between the insulating film and the conductor and the density of the insulating film, 0.5 to 3 parts by weight is desirable. As the Si-containing compound, SiO 2 , MgSiO 3
Etc.
【００３０】また、アルカリ土類金属をアルカリ土類金
属酸化物換算で０．１〜５重量部含有したのは、含有量
が０．１重量部未満の場合には、焼成時における絶縁膜
の収縮開始温度が高く、絶縁膜と導体の収縮のマッチン
グが悪くなり、絶縁膜と導体の接着が確保できないから
である。一方、５重量部を超えると、絶縁膜の密度が低
下し、電気的絶縁性が確保できなくなるからである。と
りわけ、絶縁膜と導体の接着と絶縁膜の密度の観点か
ら、０．５〜３．５重量部が好ましい。アルカリ土類金
属としては、Ｍｇ、Ｃａ、Ｓｒ、Ｂａがあり、この中で
もＢa が望ましい。アルカリ土類金属含有化合物として
は、上記アルカリ土類金属の炭酸塩、酸化物等を例示す
ることができる。The reason why the alkaline earth metal is contained in an amount of 0.1 to 5 parts by weight in terms of the alkaline earth metal oxide is that the content of the alkaline earth metal is less than 0.1 part by weight, This is because the contraction start temperature is high, the matching of the contraction between the insulating film and the conductor becomes poor, and the adhesion between the insulating film and the conductor cannot be secured. On the other hand, if the amount exceeds 5 parts by weight, the density of the insulating film decreases, and electrical insulation cannot be ensured. In particular, from the viewpoint of the adhesion between the insulating film and the conductor and the density of the insulating film, the amount is preferably 0.5 to 3.5 parts by weight. Alkaline earth metals include Mg, Ca, Sr and Ba, of which Ba is desirable. Examples of the alkaline earth metal-containing compound include carbonates and oxides of the above alkaline earth metals.
【００３１】さらに、本発明のセラミック回路基板は、
主成分１００重量部に対して、さらにＣｏをＣｏ3 Ｏ4
換算で０．１〜５重量部含有することが望ましい。これ
は、ＣｏをＣｏ3 Ｏ4 換算で０．１重量部未満では、絶
縁膜の着色効果が得られず、絶縁膜と導体との識別が困
難となるからである。一方、５重量部よりも多くなる
と、絶縁膜の密度が低下し、絶縁膜の電気的絶縁性が低
下するからである。とりわけ、着色効果と絶縁膜の密度
の観点から、０．７〜３重量部が好ましい。Ｃｏ含有化
合物としては、ＣｏＯ、Ｃｏ3 Ｏ4 、ＣｏＣＯ3 等があ
る。Furthermore, the ceramic circuit board of the present invention
Co is added to Co 3 O 4 with respect to 100 parts by weight of the main component.
It is desirable to contain 0.1 to 5 parts by weight in conversion. This is because if Co is less than 0.1 part by weight in terms of Co 3 O 4 , the effect of coloring the insulating film cannot be obtained, and it becomes difficult to distinguish the insulating film from the conductor. On the other hand, if the amount is more than 5 parts by weight, the density of the insulating film decreases, and the electrical insulation of the insulating film decreases. In particular, from the viewpoint of the coloring effect and the density of the insulating film, 0.7 to 3 parts by weight is preferable. Examples of the Co-containing compound include CoO, Co 3 O 4 , and CoCO 3 .
【００３２】本発明の絶縁膜は以下のようにして得るこ
とができる。原料粉末として、例えば、ＭｇＴｉＯ3 粉
末、ＣａＴｉＯ3 粉末と、Ｂ2 Ｏ3 粉末、Ｌｉ2 ＣＯ3
粉末、ＳｉＯ2 粉末、さらにアルカリ土類金属酸化物
（ＭｇＯ、ＣａＯ、ＳｒＯ、ＢａＯ）粉末、もしくはこ
れらを含むガラスフリット、またはこれらとＣｏ3 Ｏ4
粉末を準備し、これらを上記組成比となるように秤量
し、ＺｒＯ2 ボールにより粉砕混合し、この混合粉末を
６５０〜８５０℃で仮焼した後、再度ＺｒＯ2 ボールに
より粉砕粒径が２．５μｍ以下になるまで粉砕混合し、
セラミック粉末を得る。The insulating film of the present invention can be obtained as follows. As the raw material powder, for example, MgTiO 3 powder, CaTiO 3 powder, B 2 O 3 powder, Li 2 CO 3
Powder, SiO 2 powder, alkaline earth metal oxide (MgO, CaO, SrO, BaO) powder or glass frit containing them, or these and Co 3 O 4
Powders are prepared, weighed so as to have the above composition ratio, pulverized and mixed with ZrO 2 balls, calcined this mixed powder at 650 to 850 ° C., and again pulverized with a ZrO 2 ball to a particle size of 2. Pulverize and mix until it becomes 5 μm or less,
Obtain ceramic powder.
【００３３】この後、セラミック粉末に有機バインダー
と有機溶剤を添加し、３本ロールミルで混合し、セラミ
ック粉末をペースト化する。そのセラミックペーストを
スクリーン印刷等の公知の印刷法により、目的とする表
面の導体（表層に露出した配線も含む）上に印刷する。Thereafter, an organic binder and an organic solvent are added to the ceramic powder and mixed with a three-roll mill to make the ceramic powder into a paste. The ceramic paste is printed on a target surface conductor (including a wiring exposed on the surface layer) by a known printing method such as screen printing.
【００３４】この後、大気中または酸素雰囲気中または
窒素雰囲気等の非酸化性雰囲気中において、８７０〜９
２０℃の焼成温度で０．５〜２時間焼成することによ
り、基板、表面導体、絶縁膜を一体焼成したものが得ら
れる。原料粉末には、焼成により酸化物を生成する水酸
化物、炭酸塩、硝酸塩等の金属塩を用いても良い。アル
カリ土類金属は、ＳｉＯ2 粉末、またはＳｉＯ2 粉末と
Ｌｉ2 ＣＯ3 粉末、あるいはＳｉＯ2 粉末とＬｉ2 ＣＯ
3 粉末とＢ2 Ｏ3 粉末とのガラスフリットとして添加す
ることが焼結性向上の観点から望ましい。本発明の絶縁
膜では、原料の混合粉砕工程等の製造過程で、Ｚｒ、Ａ
ｌ等が混入したり、原料の不可避不純物として、Ａｌ、
Ｆｅ、Ｈｆ、Ｓｎ等が含まれることがある。Thereafter, in the air, an oxygen atmosphere, or a non-oxidizing atmosphere such as a nitrogen atmosphere, 870 to 9
By firing at a firing temperature of 20 ° C. for 0.5 to 2 hours, a substrate, a surface conductor, and an insulating film integrally fired can be obtained. As the raw material powder, a metal salt such as a hydroxide, a carbonate, or a nitrate that generates an oxide upon firing may be used. The alkaline earth metal is SiO 2 powder, or SiO 2 powder and Li 2 CO 3 powder, or SiO 2 powder and Li 2 CO 3
It is desirable to add the 3 powder and the B 2 O 3 powder as a glass frit from the viewpoint of improving sinterability. In the insulating film of the present invention, Zr, A
l, etc., or
Fe, Hf, Sn and the like may be included.
【００３５】また、本発明の絶縁膜の組成物では、結晶
相として、ＭｇＴｉＯ3 または、ＭｇＴｉＯ3 とＣａＴ
ｉＯ3 を主結晶相とし、（Ｍｇ，Ｔｉ）2 （ＢＯ3 ）Ｏ
が析出することもある。Further, in the insulating film composition of the present invention, MgTiO 3 or MgTiO 3 and CaT
iO 3 as the main crystal phase, (Mg, Ti) 2 (BO 3 ) O
May be precipitated.
【００３６】尚、アルカリ土類金属は、ＭｇＴｉＯ3 と
ＣａＴｉＯ3 のＡサイトに固溶したり、あるいはガラス
成分となって、焼結性を向上させることになる。また、
Ｓｉはガラス相として存在する。さらに、本発明の絶縁
膜において、平均結晶粒径は１〜５μｍである。The alkaline earth metal dissolves in the A site of MgTiO 3 and CaTiO 3 or becomes a glass component to improve sinterability. Also,
Si exists as a glass phase. Further, in the insulating film of the present invention, the average crystal grain size is 1 to 5 μm.
【００３７】上記のセラミック回路基板の製造方法を簡
単に説明すると、例えば、絶縁層となるグリーンシート
を作製する。例えばグリーンシートは、所定のセラミッ
ク粉末と有機バインダーと有機溶剤及び必要に応じて可
塑剤とを混合し、スラリー化する。このスラリーを用い
てドクターブレード法などによりテープ成形を行い、所
定寸法に切断しグリーンシートを作製する。The method of manufacturing the above ceramic circuit board will be briefly described. For example, a green sheet to be an insulating layer is manufactured. For example, a green sheet is formed into a slurry by mixing a predetermined ceramic powder, an organic binder, an organic solvent, and if necessary, a plasticizer. Using this slurry, a tape is formed by a doctor blade method or the like, and cut into a predetermined size to produce a green sheet.
【００３８】次に、内層導体３間を接続したり、内層導
体３と表面導体２とを接続するビアホール導体４となる
貫通孔を、グリーンシートの所定の位置にパンチング等
により作製する。Next, through holes serving as via-hole conductors 4 for connecting the inner layer conductors 3 and connecting the inner layer conductors 3 and the surface conductors 2 are formed at predetermined positions of the green sheet by punching or the like.
【００３９】導電性ペーストを、絶縁体層１ａ〜１ｇと
なるグリーンシートの貫通孔に充填するとともに、その
グリーンシート上に必要に応じて所定形状の内層導体３
となる導体膜を印刷形成する。The conductive paste is filled into the through holes of the green sheets to be the insulator layers 1a to 1g, and the inner layer conductors 3 having a predetermined shape are formed on the green sheets as required.
A conductive film to be formed is formed by printing.
【００４０】次に導電性ペーストを用いて、表層の絶縁
体層１ａ、１ｇとなるグリーンシート上に所定形状の表
面導体２となる導体膜５を印刷形成する。また、表面に
露出する導体膜の一部を覆うように所定形状の絶縁膜５
となるセラミックペーストを印刷乾燥させる。Next, using a conductive paste, a conductor film 5 serving as a surface conductor 2 having a predetermined shape is formed by printing on the green sheets serving as the surface insulator layers 1a and 1g. An insulating film 5 of a predetermined shape is formed so as to cover a part of the conductor film exposed on the surface.
The ceramic paste to be printed is dried.
【００４１】このようにして得られたグリーンシートを
積層順序に応じて積層し、積層成形体を形成して、一体
的に焼成する。以上の製造工程によってセラミック回路
基板は製造される。The green sheets thus obtained are laminated according to the laminating order to form a laminated molded body, which is integrally fired. The ceramic circuit board is manufactured by the above manufacturing steps.
【００４２】[0042]
【実施例】実施例１ 原料として純度９９％以上の、ＭｇＴｉＯ3 粉末とＣａ
ＴｉＯ3 粉末、並びにＢ2 Ｏ3 粉末とアルカリ金属炭酸
塩粉末（Ｌｉ2 ＣＯ3 、Ｎａ2 ＣＯ3 、Ｋ2 ＣＯ3 ）と
ＳｉＯ2 粉末と、さらにアルカリ土類金属酸化物粉末
（ＭｇＯ、ＣａＯ、ＳｒＯ、ＢａＯ）とを含むガラスフ
リットを、表１に示す割合となるように秤量し、純水を
媒体とし、ＺｒＯ2 ボールを用いたボールミルにて２０
時間湿式混合した。EXAMPLE 1 MgTiO 3 powder having a purity of 99% or more and Ca
TiO 3 powder, B 2 O 3 powder, alkali metal carbonate powder (Li 2 CO 3 , Na 2 CO 3 , K 2 CO 3 ), SiO 2 powder, and further, alkaline earth metal oxide powder (MgO, CaO , SrO, and BaO) were weighed so as to have the proportions shown in Table 1, and the pure water was used as a medium in a ball mill using ZrO 2 balls.
Wet mixed for hours.
【００４３】次に、この混合物を乾燥（脱水）し、８０
０℃で１時間仮焼した。この仮焼物を、粉砕粒径が１．
０μｍ以下になるように粉砕し、得られたセラミック粉
末に有機バインダーとしてエチルセルロースと、有機溶
剤として２・２・４−トリメチル−３・３−ペンタジオ
ールモノイソブチレートを添加し、粉末及び有機バイン
ダーの凝集体がなくなるまで３本ロールミルで混合し、
セラミック粉末をペースト化し、絶縁膜用のセラミック
ペーストを作製した。Next, the mixture was dried (dehydrated),
Calcination was performed at 0 ° C. for 1 hour. The calcined product was obtained by pulverizing a particle having a particle size of 1.
0 μm or less, and ethyl cellulose as an organic binder and 2,2.4-trimethyl-3-3.3-pentadiol monoisobutyrate as an organic solvent were added to the obtained ceramic powder to obtain a powder and an organic binder. Mix with a three-roll mill until the aggregates of
The ceramic powder was made into a paste to prepare a ceramic paste for an insulating film.
【００４４】次に、ＭｇＯ、ＣａＯ、ＴｉＯ2 、Ｂ2 Ｏ
3 、Ｌｉ2 ＣＯ3 からなる組成物９５重量％、ガラス成
分としてホウケイ酸アルカリ土類ガラス５重量％を用
い、これに上記した有機バインダー、有機溶剤を添加し
てなるスラリーを、ドクターブレード法により薄層化
し、基板用のグリーンシートを作製した。Next, MgO, CaO, TiO 2 , B 2 O
3. A slurry obtained by using 95% by weight of a composition composed of Li 2 CO 3 and 5% by weight of an alkaline earth borosilicate glass as a glass component and adding the organic binder and the organic solvent described above to the slurry by a doctor blade method. It was thinned to produce a green sheet for a substrate.
【００４５】この後、ビアホール導体を作製するための
貫通孔を、グリーンシートの所定の位置にパンチング等
により作製し、Ａｇからなる導電性ペーストを貫通孔に
充填するとともに、所定形状の内層導体となる導体膜を
印刷形成した。Thereafter, a through-hole for forming a via-hole conductor is formed at a predetermined position of the green sheet by punching or the like, and a conductive paste made of Ag is filled in the through-hole. A conductive film was formed by printing.
【００４６】一方、最上層、最下層となるグリーンシー
トに、表面導体となるＡｇからなる導電性ペーストを用
いて所定形状の導体膜を印刷形成し、表面に露出する導
体膜の一部を覆うように、上記絶縁膜用のセラミックペ
ーストを印刷し、乾燥させた。On the other hand, a conductor film of a predetermined shape is printed and formed on the uppermost and lowermost green sheets using a conductive paste made of Ag as a surface conductor, and covers a part of the conductor film exposed on the surface. As described above, the ceramic paste for the insulating film was printed and dried.
【００４７】導電性ペーストが充填され、所定形状の導
体膜が形成されたグリーンシートを複数積層するととも
に、最上層および最下層に、表面導体となる導体膜の一
部をセラミックペーストで被覆したグリーンシートを積
層し、積層成形体を作製した。A green sheet in which a conductive paste is filled and a plurality of green sheets on which a conductive film having a predetermined shape is formed is laminated, and the uppermost layer and the lowermost layer have a part of the conductive film serving as a surface conductor covered with a ceramic paste. The sheets were laminated to produce a laminated molded body.
【００４８】この後、大気中４００℃で脱バインダー処
理し、さらに９１０℃で焼成し、図１に示すようなセラ
ミック回路基板を作製した。尚、絶縁体層１ａ〜１ｇの
厚みは、０．１５ｍｍであり、セラミック回路基板の大
きさは、縦１０ｍｍ、横１０ｍｍ、厚み１．２ｍｍであ
った。Thereafter, binder removal treatment was performed at 400 ° C. in the air, and calcination was further performed at 910 ° C. to produce a ceramic circuit board as shown in FIG. The thickness of the insulator layers 1a to 1g was 0.15 mm, and the size of the ceramic circuit board was 10 mm in length, 10 mm in width, and 1.2 mm in thickness.
【００４９】尚、上記絶縁膜を形成するセラミックペー
ストをドクターブレード法により塗布し、約１ｍｍ厚の
塗布膜を作製した。その塗布膜を乾燥し、金型プレス機
により直径３０ｍｍに打ち抜き、大気中４００℃で脱バ
インダー処理し、さらに９１０℃で焼成し、その焼成体
密度をアルキメデス法により評価した。The above-mentioned ceramic paste for forming the insulating film was applied by a doctor blade method to produce a coating film having a thickness of about 1 mm. The coated film was dried, punched out to a diameter of 30 mm by a die press, debindered at 400 ° C. in air, and fired at 910 ° C., and the fired body density was evaluated by Archimedes method.
【００５０】また、グリーンシート上に、ライン幅が７
５μｍ、スペース間隔が７５μｍとなる導体を形成し、
それをセラミックペーストで被覆し、他のグリーンシー
トとともに積層し、一体焼成した基板を作製した。上記
導体間にＤＣ１５Ｖの電圧を印可し、温度８５℃、湿度
８５％の雰囲気中に１０００時間放置後、上記表面導体
間の絶縁抵抗を測定した。さらに絶縁膜と表面導体との
接着性を、走査型電子顕微鏡の観察して、絶縁膜と表面
導体との間に間隙が存在する場合には接着性が不良と判
断した。その結果を表１に記載した。The green sheet has a line width of 7
5 μm, a conductor having a space interval of 75 μm is formed,
The substrate was covered with a ceramic paste, laminated with other green sheets, and integrally fired to produce a substrate. A voltage of 15 V DC was applied between the conductors, and left for 1000 hours in an atmosphere at a temperature of 85 ° C. and a humidity of 85%, and then the insulation resistance between the surface conductors was measured. Further, the adhesiveness between the insulating film and the surface conductor was observed by a scanning electron microscope, and it was determined that the adhesiveness was poor when a gap was present between the insulating film and the surface conductor. The results are shown in Table 1.
【００５１】[0051]
【表１】 [Table 1]
【００５２】この表１から、本発明の絶縁膜の焼成体密
度は３．５０〜３．５３ｇ／ｃｍ3と高い値を示し、安
定しており、この結果、表面導体間の電気的絶縁性も１
０10Ω以上と高い値を示すことが判る。また、絶縁膜と
導体との接着が確保されることが判る。From Table 1, it can be seen that the density of the fired body of the insulating film of the present invention is as high as 3.50 to 3.53 g / cm 3 and is stable. As a result, the electrical insulation between the surface conductors is high. Also one
It turns out that it shows a high value of 0 10 Ω or more. Further, it can be seen that adhesion between the insulating film and the conductor is ensured.
【００５３】尚、表１のアルカリ金属化合物の欄におい
て、Ｌｉ、Ｎａ、Ｋと記載したが、これはＬｉ2 Ｃ
Ｏ3 、Ｎａ2 ＣＯ3 、Ｋ2 ＣＯ3 の意味であり、また、
アルカリ土類金属化合物の欄において、Ｍｇ、Ｃａ、Ｓ
ｒ、Ｂａと記載したが、これは、ＭｇＯ、ＣａＯ、Ｓｒ
Ｏ、ＢａＯの意味である。さらに、表１の試料Ｎo.４、
５については、Ｍｇ／Ｔｉ、Ｃａ／Ｔｉ比がそれぞれ
１．１，０．９の原料粉末を用いた。In the column of the alkali metal compound in Table 1, Li, Na, and K are described, which are represented by Li 2 C
O 3 , Na 2 CO 3 , K 2 CO 3 , and
In the column of alkaline earth metal compound, Mg, Ca, S
r and Ba, which are MgO, CaO, Sr
It means O or BaO. Further, Sample No. 4 in Table 1
With respect to 5, raw material powders having Mg / Ti and Ca / Ti ratios of 1.1 and 0.9, respectively, were used.
【００５４】実施例２ 原料として純度９９％以上の、ＭｇＴｉＯ3 粉末とＣａ
ＴｉＯ3 粉末、並びにＢ2 Ｏ3 粉末、Ｌｉ2 ＣＯ3 粉
末、ＳｉＯ2 粉末、さらにアルカリ土類金属酸化物粉末
（ＭｇＯ、ＣａＯ、ＳｒＯ、ＢａＯ）を含むガラスフリ
ット、さらにＣｏ3 Ｏ4 粉末を、表２に示す割合となる
ように秤量し、純水を媒体とし、ＺｒＯ2ボールを用い
たボールミルにて２０時間湿式混合し、上記実施例１と
同様にして、セラミック回路基板を作製し、同様の評価
を行った。その結果を表２に記載する。Example 2 MgTiO 3 powder having a purity of 99% or more and Ca
Glass frit containing TiO 3 powder, B 2 O 3 powder, Li 2 CO 3 powder, SiO 2 powder, further alkaline earth metal oxide powder (MgO, CaO, SrO, BaO), and further Co 3 O 4 powder , Weighed so as to have a ratio shown in Table 2, wet-mixed with pure water as a medium in a ball mill using ZrO 2 balls for 20 hours, and produced a ceramic circuit board in the same manner as in Example 1 above. The same evaluation was performed. Table 2 shows the results.
【００５５】[0055]
【表２】 [Table 2]
【００５６】この表２から、本発明のセラミック回路基
板では、Ｃｏを含有することにより、青色に着色できる
とともに、Ｃｏ3 Ｏ4 換算で０．１〜５重量部の範囲内
であれば、導体との接着も確保され、絶縁膜の焼成体密
度も３．５０〜３．５３ｇ／ｃｍ3 と高い値を示し、安
定しており、電気的絶縁性も１０10Ω以上と高い値を示
すことが判る。From Table 2, it can be seen that the ceramic circuit board of the present invention can be colored blue by containing Co, and if it is in a range of 0.1 to 5 parts by weight in terms of Co 3 O 4 , And the density of the fired body of the insulating film is as high as 3.50 to 3.53 g / cm 3 , stable, and the electrical insulation is as high as 10 10 Ω or more. I understand.
【００５７】[0057]
【発明の効果】本発明のセラミック回路基板では、絶縁
膜の組成を、組成式（１−ｘ）ＭｇＴｉＯ3 ・ｘＣａＴ
ｉＯ3 で表される主成分に、Ｂ、アルカリ金属、Ｓｉ、
アルカリ土類金属を含有することにより、絶縁膜の焼成
後の密度バラツキ、特に密度低下を解決し、絶縁膜の電
気的絶縁性を確保することにより、安定なセラミック回
路基板を提供できる。さらに、Ｃｏを含有することによ
り、白色導体と絶縁膜との識別を容易にすることができ
る。According to the ceramic circuit board of the present invention, the composition of the insulating film is determined by the composition formula (1-x) MgTiO 3 .xCaT
The main components represented by iO 3 include B, alkali metal, Si,
By containing the alkaline earth metal, it is possible to solve the variation in the density of the insulating film after firing, especially the reduction in the density, and to secure the electrical insulation of the insulating film, thereby providing a stable ceramic circuit board. Further, by containing Co, it is possible to easily distinguish between the white conductor and the insulating film.
【図１】本発明のセラミック回路基板の断面図を示す。FIG. 1 is a sectional view of a ceramic circuit board according to the present invention.
１・・・基板（積層体） ２・・・表面導体 ３・・・内層導体 ４・・・ビアホール導体 ５・・・絶縁膜 １０・・・セラミック回路基板 DESCRIPTION OF SYMBOLS 1 ... Substrate (laminated body) 2 ... Surface conductor 3 ... Inner layer conductor 4 ... Via hole conductor 5 ... Insulating film 10 ... Ceramic circuit board
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G031 AA01 AA02 AA03 AA04 AA11 AA22 AA28 AA30 BA12 5E314 AA02 BB06 CC06 DD06 FF02 FF14 GG03 GG12 GG18 5E338 AA03 AA18 CC01 DD36 EE11 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G031 AA01 AA02 AA03 AA04 AA11 AA22 AA28 AA30 BA12 5E314 AA02 BB06 CC06 DD06 FF02 FF14 GG03 GG12 GG18 5E338 AA03 AA18 CC01 DD36 EE11
Claims (3)
表面導体の少なくとも一部を絶縁膜で被覆したセラミッ
ク回路基板において、前記絶縁膜が、金属元素として少
なくともＭｇおよびＴｉを含有し、これらのモル比によ
る組成式を、 （１−ｘ）ＭｇＴｉＯ3 ・ｘＣａＴｉＯ3 と表した時、前記ｘが０≦ｘ≦０．２を満足する主成分
と、該主成分１００重量部に対して、ＢをＢ2 Ｏ3 換算
で３〜２０重量部、アルカリ金属をアルカリ金属炭酸塩
換算で１〜１０重量部、ＳｉをＳｉＯ2 換算で０．０１
〜５重量部、アルカリ土類金属をアルカリ土類金属酸化
物換算で０．１〜５重量部含有することを特徴とするセ
ラミック回路基板。1. A ceramic circuit board in which at least a part of a surface conductor mainly composed of Ag formed on a substrate surface is covered with an insulating film, wherein the insulating film contains at least Mg and Ti as metal elements, the formula of these molar ratios, (1-x) when expressed as MgTiO 3 · xCaTiO 3, a main component wherein x satisfies 0 ≦ x ≦ 0.2, with respect to the main component 100 parts by weight , B is 3 to 20 parts by weight in terms of B 2 O 3 , alkali metal is 1 to 10 parts by weight in terms of alkali metal carbonate, Si is 0.01 in terms of SiO 2.
1 to 5 parts by weight, and 0.1 to 5 parts by weight of alkaline earth metal in terms of alkaline earth metal oxide.
3 Ｏ4 換算で０．１〜５重量部含有することを特徴とす
る請求項１記載のセラミック回路基板。2. Co is Co to Co with respect to 100 parts by weight of the main component.
2. The ceramic circuit board according to claim 1, wherein said ceramic circuit board contains 0.1 to 5 parts by weight in terms of 3 O 4 .
晶とし、絶縁膜と前記基板が同時焼成されることを特徴
とする請求項１または２記載のセラミック回路基板。3. The ceramic circuit board according to claim 1, wherein the substrate has MgTiO 3 and CaTiO 3 as main crystals, and the insulating film and the substrate are simultaneously fired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10336369A JP2000165020A (en) | 1998-11-26 | 1998-11-26 | Ceramic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10336369A JP2000165020A (en) | 1998-11-26 | 1998-11-26 | Ceramic circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000165020A true JP2000165020A (en) | 2000-06-16 |
Family
ID=18298432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10336369A Pending JP2000165020A (en) | 1998-11-26 | 1998-11-26 | Ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000165020A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2361811A (en) * | 2000-03-02 | 2001-10-31 | Murata Manufacturing Co | Insulating thick film composition, ceramic electronic device and apparatus using the same. |
| CN113354409A (en) * | 2021-06-07 | 2021-09-07 | 臻金新材(深圳)有限公司 | Microwave dielectric ceramic and preparation method thereof |
-
1998
- 1998-11-26 JP JP10336369A patent/JP2000165020A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2361811A (en) * | 2000-03-02 | 2001-10-31 | Murata Manufacturing Co | Insulating thick film composition, ceramic electronic device and apparatus using the same. |
| GB2361811B (en) * | 2000-03-02 | 2002-09-04 | Murata Manufacturing Co | Insulating thick film composition, ceramic electronic device using the same, and electronic apparatus |
| US6452264B2 (en) | 2000-03-02 | 2002-09-17 | Murata Manufacturing Co. Ltd | Insulating thick film composition, ceramic electronic device using the same, and electronic apparatus |
| CN113354409A (en) * | 2021-06-07 | 2021-09-07 | 臻金新材(深圳)有限公司 | Microwave dielectric ceramic and preparation method thereof |
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