JP2000164901A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JP2000164901A JP2000164901A JP10338119A JP33811998A JP2000164901A JP 2000164901 A JP2000164901 A JP 2000164901A JP 10338119 A JP10338119 A JP 10338119A JP 33811998 A JP33811998 A JP 33811998A JP 2000164901 A JP2000164901 A JP 2000164901A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- bus bar
- semiconductor substrate
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池に関し、特
に裏面電極のバスバー部に配線材を接続するための幅広
なタブ部を設けた太陽電池に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly to a solar cell having a wide tab portion for connecting a wiring member to a bus bar portion of a back electrode.
【０００２】[0002]
【従来の技術】従来の太陽電池を図３および図４に示
す。図３は従来のシリコン系太陽電池の断面図、図４は
平面図である。図３および図４において、１は例えば５
００μｍ程度の厚さのＰ形シリコンの半導体基板、２は
この半導体基板１の一方の主面上に受光面を形成するた
めに、０．３〜０．５μｍ程度の厚さにｎ形不純物を浅
く拡散して形成したｎ形拡散層、３はこの受光面を形成
するｎ形拡散層２からマイナス電位を取り出すために、
１〜２ｍｍ程度の幅で１〜５ｍｍ間隔で設けられたグリ
ッド電極、４は半導体基板１の他方の主面上に設けてプ
ラス電位を取り出す裏面電極、５は受光面を形成するｎ
形拡散層２上に設けた光反射防止膜である。2. Description of the Related Art A conventional solar cell is shown in FIGS. FIG. 3 is a sectional view of a conventional silicon solar cell, and FIG. 4 is a plan view. 3 and 4, 1 is, for example, 5
A P-type silicon semiconductor substrate 2 having a thickness of about 00 μm, and an n-type impurity having a thickness of about 0.3 to 0.5 μm is formed on the semiconductor substrate 1 to form a light receiving surface on one main surface of the semiconductor substrate 1. The n-type diffusion layer 3 formed by diffusion shallowly takes out a negative potential from the n-type diffusion layer 2 forming the light receiving surface.
A grid electrode provided with a width of about 1 to 2 mm and spaced at an interval of 1 to 5 mm, a back electrode 4 provided on the other main surface of the semiconductor substrate 1 to take out a positive potential, and a n forming a light receiving surface
It is a light reflection preventing film provided on the shaped diffusion layer 2.
【０００３】受光面側の表面電極３は、集光効率と集電
効率の両方を満足させるために、主に太陽電池素子の表
面に上下、左右対称の櫛型形状となっている。すなわ
ち、この表面電極３は、光入射により太陽電池素子内部
で発生した電気を収集するための複数本の微細なフィン
ガー部３ａと、収集した電気を外部に取り出すためのバ
スバー部３ｂが直交する形状となっている。また、裏面
電極４も複数本の微細なフィンガー部４ａと配線材を接
続するためのバスバー部４ｂとが直交する形状となって
いる。また、裏面電極４には、素子間を配線材で接続す
る際の配線性を向上させるために、バスバー部３ｂの端
部に配線材溶接部として、バスバー部３ｂの幅を広げた
タブ部３ｃを設けている。The surface electrode 3 on the light receiving surface side has a comb shape that is vertically and horizontally symmetrical mainly on the surface of the solar cell element in order to satisfy both light collection efficiency and current collection efficiency. That is, the surface electrode 3 has a shape in which a plurality of fine finger portions 3a for collecting electricity generated inside the solar cell element due to light incidence and a bus bar portion 3b for extracting the collected electricity to the outside are orthogonal to each other. It has become. The back electrode 4 also has a shape in which a plurality of fine finger portions 4a and a bus bar portion 4b for connecting a wiring member are orthogonal to each other. In order to improve the wiring property when connecting the elements with a wiring material, the back electrode 4 has a tab portion 3c having an enlarged width of the bus bar portion 3b as a wiring material welding portion at an end of the bus bar portion 3b. Is provided.
【０００４】この裏面電極４は主にＡｇ−Ａｌ等の導電
性金属ペーストをスクリーン印刷して焼き付けることで
形成した後、この裏面電極４の表面の保護並びに複数の
素子を接続する際の配線性を向上させる目的で、その表
面を半田７で被覆する。なお、表面電極３も半田６で被
覆される。The back electrode 4 is formed mainly by screen-printing and baking a conductive metal paste such as Ag-Al, and then protecting the surface of the back electrode 4 and the wiring property when connecting a plurality of elements. The surface is covered with solder 7 for the purpose of improving the quality. The surface electrode 3 is also covered with the solder 6.
【０００５】[0005]
【発明が解決しようとする課題】ところが、この従来の
太陽電池では、必要な大きさに分割して使用する場合、
例えば図４に示すＸ−Ｘ線の位置で切断して使用する
が、図５に示すように、分割後の素子のタブ部４ｃを設
けていない側の素子１’については、バスバー部４ｂの
みで配線接続する必要がある。バスバー部４ｂは、通常
１〜２ｍｍ程度の幅しかないため、配線材８の半田付け
が難しく、またその溶接部から剥離が起こりやすくな
り、品質低下につながるという問題があった。However, in this conventional solar cell, when it is used by being divided into required sizes,
For example, as shown in FIG. 5, the device is cut and used at the position of the line XX shown in FIG. 4, but as shown in FIG. 5, only the bus bar portion 4b is provided for the device 1 'on the side where the tab portion 4c is not provided. It is necessary to connect by wiring. Since the bus bar portion 4b usually has a width of only about 1 to 2 mm, there is a problem that it is difficult to solder the wiring member 8 and that the bus bar portion 4b is easily peeled from a welded portion, which leads to a deterioration in quality.
【０００６】また、この対策としてバスバー電極４ｂ全
体を太くすることも考えられるが、半田６での被覆時に
半田の過剰な溜まりが発生する原因になるという問題が
あった。As a countermeasure, it is conceivable to increase the thickness of the bus bar electrode 4b as a whole. However, there is a problem that excessive pooling of the solder may occur at the time of coating with the solder 6.
【０００７】本発明はこのような従来技術の問題点に鑑
みてなされたものであり、一つの太陽電池素子を複数に
分割して使用する場合に発生する不都合を解消した太陽
電池素子を提供することを目的とする。The present invention has been made in view of such problems of the prior art, and provides a solar cell element in which the inconvenience that occurs when one solar cell element is divided into a plurality of parts and used is eliminated. The purpose is to:
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る太陽電池では、半導体接合部を有する
半導体基板の表面側に表面電極を設けると共に、この半
導体基板の裏面側にフィンガー部とバスバー部を格子状
に設けた裏面電極を形成した太陽電池において、前記裏
面電極のバスバー部に配線材を接続するための幅広なタ
ブ部を複数設けた。In order to achieve the above object, in a solar cell according to the present invention, a surface electrode is provided on a front surface of a semiconductor substrate having a semiconductor junction, and a finger is provided on a back surface of the semiconductor substrate. In a solar cell in which a back electrode having a portion and a bus bar portion provided in a lattice shape was formed, a plurality of wide tab portions for connecting a wiring member to the bus bar portion of the back electrode were provided.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施形態を添付図
面に基づき詳細に説明する。図１は本発明に係る太陽電
池を示す断面図である。同図において、１は例えば５０
０μｍ程度の厚さのＰ形シリコンから成る半導体基板、
２はこの半導体基板１の一方の主面上に受光面を形成す
るために、０．３〜０．５μｍ程度の厚さにｎ形不純物
を浅く拡散して形成したｎ形拡散層、３はこの受光面を
形成するｎ形拡散層２からマイナス電位を取り出すため
に、１〜２ｍｍ程度の幅で１〜５ｍｍ間隔で形成したフ
ィンガー電極３ａと素子同志を配線材で接続するための
バスバー電極３ｂとを格子状に設けた表面電極、４は半
導体基板１の他の主面上に設けて、プラス電位を取り出
す裏面電極、５は受光面を形成するｎ形拡散層２上に設
けた光反射防止膜である。裏面電極４も１〜２ｍｍ程度
の幅で１〜５ｍｍ間隔で形成したフィンガー電極４ａと
素子同志を配線材で接続するためのバスバー電極４ｂと
を格子状に設けて構成されている。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing a solar cell according to the present invention. In the figure, 1 is, for example, 50
A semiconductor substrate made of P-type silicon having a thickness of about 0 μm;
Reference numeral 2 denotes an n-type diffusion layer formed by diffusing an n-type impurity shallowly to a thickness of about 0.3 to 0.5 μm in order to form a light receiving surface on one main surface of the semiconductor substrate 1. In order to extract a negative potential from the n-type diffusion layer 2 forming the light receiving surface, a finger electrode 3a formed at a width of about 1 to 2 mm and spaced at an interval of 1 to 5 mm and a bus bar electrode 3b for connecting the elements to each other with a wiring material. And 4 are provided on the other main surface of the semiconductor substrate 1 to provide a positive potential, and 5 is a light reflection provided on the n-type diffusion layer 2 forming a light receiving surface. It is a prevention film. The back electrode 4 is also formed by providing finger electrodes 4a formed at a width of about 1 to 2 mm at intervals of 1 to 5 mm and bus bar electrodes 4b for connecting the elements with each other with a wiring material in a lattice shape.
【００１０】本発明では、裏面電極４のバスバー部４ｂ
に電極を接続するための幅広なタブ部４ｃを複数設け
た。すなわち、従来は素子裏面のバスバー部４ｂの端部
にのみ設けていたタブ部４ｃを素子を必要とする大きさ
に分割した際の分割端部にあたる部分についても同様
に、あらかじめタブ部４ｃを形成しておく。タブ部４ｃ
を設ける位置は、分割素子端面からの位置関係が分割後
のいずれの素子においても同一になるようにする。この
ことにより、素子を分割後も配線性の低下や、配線部か
らの電極剥離を引き起こすことなく配線することが可能
となる。In the present invention, the bus bar portion 4b of the back electrode 4
A plurality of wide tab portions 4c for connecting the electrodes to each other are provided. That is, similarly, the tab portion 4c previously formed only at the end portion of the bus bar portion 4b on the back surface of the device is formed in advance at the portion corresponding to the divided end portion when the device is divided into a required size. Keep it. Tab part 4c
Is provided so that the positional relationship from the end face of the divided element is the same in all the divided elements. As a result, it is possible to carry out wiring without deteriorating the wiring properties or causing the electrode to peel off from the wiring portion even after the element is divided.
【００１１】なお、素子を複数種の大きさに分割する場
合も同様に複数個のタブ部４ｃをあらかじめ設ければよ
い。また、タブ部４ｃ、４ｃ’の形状は、配線材８の溶
接時の電極部４の接着強度が低下しないような形状であ
れば特に限定されないが、電極部４の半田被覆を浸漬方
式で行なう場合は、パターン面積の広いタブ部４ｃに半
田が過剰に乗ることを防止するため、溶融半田への浸漬
方向に対して下側になる部分に、過剰半田を流すための
テーパー形状を設けることが望ましい。When the element is divided into a plurality of sizes, a plurality of tab portions 4c may be provided in advance. The shape of the tabs 4c and 4c 'is not particularly limited as long as the adhesive strength of the electrode portion 4 at the time of welding the wiring member 8 is not reduced, but the electrode portion 4 is coated with solder by a dipping method. In this case, in order to prevent the solder from being excessively placed on the tab portion 4c having a large pattern area, a taper shape for flowing excess solder may be provided in a portion below the immersion direction in the molten solder. desirable.
【００１２】また、分割して使用しない場合は、複数の
タブ部４ｃを形成したままの状態で使用される。When not used separately, a plurality of tab portions 4c are used in a state where they are formed.
【００１３】次に、上記構成による太陽電池の製造方法
について説明する。まず、５００μｍ程度の厚さのＰ形
シリコン単結晶の半導体基板１の一方の主面にｎ形不純
物を浅く拡散して、０．３〜０．５μｍ程度のｎ形拡散
層２を形成して受光面とする。そして、ｎ型拡散層２上
にＳｉＮx などの反射防止膜５を形成する。そして、こ
のｎ形拡散層２に例えばＡｇペーストをスクリーン印刷
して、フィンガー部３ａとバスバー部３ｂとを有する表
面電極３を形成すると共に、半導体基板１の裏面全体に
例えばＡｇ−Ａｌぺーストをスクリーン印刷して、フィ
ンガー部４ａと所定位置にタブ部４ｃ、４ｃ’を有する
バスバー部４ｂとを有する裏面電極４を形成する。そし
て、大気中で、７００℃〜７５０℃で５分程度焼成し、
半田槽に浸漬して表面電極３と裏面電極４上に半田層
６、７を形成する。この半田層６、７は例えば１０〜３
００μｍ程度の厚みに形成される。複数の素子に分割し
て使用する場合は、バスバー部４ｂのタブ部４ｃ’の側
部が切断されるように、レーザやダイヤモンドソーで基
板１を切断して分割し、複数の素子のバスバー部４ｂの
タブ部４ｃと他方の素子の表面電極３を配線材８で接続
する。Next, a method of manufacturing the solar cell having the above configuration will be described. First, an n-type impurity is shallowly diffused into one main surface of a P-type silicon single crystal semiconductor substrate 1 having a thickness of about 500 μm to form an n-type diffusion layer 2 having a thickness of about 0.3 to 0.5 μm. Light receiving surface. Then, an antireflection film 5 such as SiN x is formed on the n-type diffusion layer 2. Then, for example, an Ag paste is screen-printed on the n-type diffusion layer 2 to form a surface electrode 3 having a finger portion 3a and a bus bar portion 3b, and an Ag-Al paste is formed on the entire back surface of the semiconductor substrate 1, for example. Screen printing is performed to form a back electrode 4 having finger portions 4a and bus bar portions 4b having tab portions 4c and 4c 'at predetermined positions. Then, it is fired in the atmosphere at 700 ° C. to 750 ° C. for about 5 minutes,
By immersing in a solder bath, solder layers 6 and 7 are formed on front electrode 3 and back electrode 4. The solder layers 6 and 7 are, for example, 10 to 3
It is formed to a thickness of about 00 μm. When the device is used by being divided into a plurality of devices, the substrate 1 is cut and divided by a laser or a diamond saw so that the side portion of the tab portion 4c 'of the bus bar portion 4b is cut. The tab portion 4c of 4b and the surface electrode 3 of the other element are connected by the wiring member 8.
【００１４】[0014]
【発明の効果】以上のように、本発明に係る太陽電池に
よれば、裏面電極のバスバー部に配線材を接続するため
の幅広なタブ部を複数設けたことから、分割素子を配線
する際も分割前の素子と同様の条件で配線材を溶接する
ことができ、複雑な溶接条件を設定する必要がない。ま
た、電極形成時のスクリーンパターンの設計を変更する
だけで、非常に簡単に問題の解決を図ることができる。
さらに、分割する大きさが複数種ある場合でも、あらか
じめ該当箇所に複数個のタブ部を設けることで対応でき
る。As described above, according to the solar cell of the present invention, a plurality of wide tabs for connecting a wiring member are provided on the bus bar portion of the back electrode, so that the divided elements can be wired. Also, the wiring member can be welded under the same conditions as those of the element before division, and there is no need to set complicated welding conditions. Further, the problem can be solved very easily only by changing the design of the screen pattern when the electrodes are formed.
Further, even when there are a plurality of types of division sizes, it is possible to cope with the problem by providing a plurality of tab portions in the corresponding portions in advance.
【図１】本発明に係る太陽電池を示す図である。FIG. 1 is a view showing a solar cell according to the present invention.
【図２】本発明に係る太陽電池を分割して接続した状態
を示す図である。FIG. 2 is a diagram showing a state where the solar cells according to the present invention are divided and connected.
【図３】従来の太陽電池を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional solar cell.
【図４】従来の太陽電池を示す平面図である。FIG. 4 is a plan view showing a conventional solar cell.
【図５】従来の太陽電池を複数接続した状態を示す図で
ある。FIG. 5 is a diagram showing a state in which a plurality of conventional solar cells are connected.
１‥‥‥半導体基板、２‥‥‥ｎ形拡散層、３‥‥‥表
面電極、４‥‥‥裏面電極、４ａ‥‥‥フィンガー部、
４ｂ‥‥‥バスバー部、４ｃ‥‥‥タブ部、５‥‥‥光
反射防止膜1 semiconductor substrate, 2 n-type diffusion layer, 3 front electrode, 4 back electrode, 4a finger section,
4b busbar, 4c tab, 5 anti-reflective coating
Claims (1)
側に表面電極を設けると共に、この半導体基板の裏面側
にフィンガー部とバスバー部を格子状に設けた裏面電極
を形成した太陽電池において、前記裏面電極のバスバー
部に配線材を接続するための幅広なタブ部を複数設けた
ことを特徴とする太陽電池。1. A solar cell having a front surface electrode provided on a front surface side of a semiconductor substrate having a semiconductor junction portion and a back surface electrode having a finger portion and a bus bar portion provided in a lattice pattern on the back surface side of the semiconductor substrate. A solar cell, wherein a plurality of wide tab portions for connecting a wiring member to a bus bar portion of a back electrode are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10338119A JP2000164901A (en) | 1998-11-27 | 1998-11-27 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10338119A JP2000164901A (en) | 1998-11-27 | 1998-11-27 | Solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000164901A true JP2000164901A (en) | 2000-06-16 |
Family
ID=18315099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10338119A Pending JP2000164901A (en) | 1998-11-27 | 1998-11-27 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000164901A (en) |
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| JP2008205137A (en) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | Solar cell and solar cell module |
| WO2009017174A1 (en) * | 2007-07-30 | 2009-02-05 | Kyocera Corporation | Solar cell module |
| CN101867321A (en) * | 2010-05-31 | 2010-10-20 | 江西赛维Ldk太阳能高科技有限公司 | Solar cell string and solar cell component for ground power generation and solar cell plate thereof |
| WO2012001815A1 (en) * | 2010-07-02 | 2012-01-05 | 三菱電機株式会社 | Solar cell module and method for manufacturing same |
| CN102414830A (en) * | 2009-04-27 | 2012-04-11 | 京瓷株式会社 | Solar cell element, segmented solar cell element, solar cell module, and electronic appliance |
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| JP2014033240A (en) * | 2013-11-21 | 2014-02-20 | Mitsubishi Electric Corp | Solar cell module |
| JPWO2013005475A1 (en) * | 2011-07-04 | 2015-02-23 | 三洋電機株式会社 | Solar cell module and solar cell |
| JP2015039005A (en) * | 2014-09-30 | 2015-02-26 | 三洋電機株式会社 | Solar battery and solar battery module |
| JP2015070260A (en) * | 2013-09-27 | 2015-04-13 | エルジー エレクトロニクス インコーポレイティド | Solar cell |
| JP2015527752A (en) * | 2012-09-11 | 2015-09-17 | アールイーシー ソーラー プライベート リミテッド | Manufacturing method of back contact solar cell module using linear ribbon connector strip and each solar cell module |
| EP3940794A4 (en) * | 2019-03-15 | 2023-03-15 | Kaneka Corporation | Solar battery module manufacturing method, solar battery module, and raw material solar battery cell |
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1998
- 1998-11-27 JP JP10338119A patent/JP2000164901A/en active Pending
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