JP2000141214A - Double side grinder of wafer - Google Patents
Double side grinder of waferInfo
- Publication number
- JP2000141214A JP2000141214A JP33842498A JP33842498A JP2000141214A JP 2000141214 A JP2000141214 A JP 2000141214A JP 33842498 A JP33842498 A JP 33842498A JP 33842498 A JP33842498 A JP 33842498A JP 2000141214 A JP2000141214 A JP 2000141214A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- double
- platen
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ウエハの両面研磨
装置に関する。本発明の両面研磨装置は、研磨時、ウエ
ハの研磨状態を目視できるとともに、研磨時のウエハの
肉厚を測定できる利点を有する。The present invention relates to a wafer double-side polishing apparatus. Advantageous Effects of Invention The double-side polishing apparatus of the present invention has an advantage that the polishing state of a wafer can be visually observed during polishing and the thickness of the wafer can be measured during polishing.
【０００２】[0002]
【従来の技術】半導体チップの情報集積化に伴い、２５
６ＭＤＲＡＭのウエハではリソグラフィの焦点深度確保
のため０．２５μｍプロセスが要求され、かつ、生産性
確保の面からウエハ径も３００ｍｍ、４５０ｍｍと大口
径に移行しつつある。かかる大口径ウエハにおいて０．
２５μｍプロセスの要求性能を満たすには両面鏡面のウ
エハが最適である。ウエハ径が４インチ、６インチの両
面研磨装置としては、例えば、特開昭５８−２２４００
号、特開平２−９５７１号、同５−１６９３６５号、同
９−１０９００７号、同９−２８３４７４号公報に開示
されるように、例えば図４に示す下記（Ｉ）〜（VI）の
機構を有する複葉のウエハ両面研磨装置が使用されてい
る。2. Description of the Related Art With the integration of information on semiconductor chips, 25
For a 6MDRAM wafer, a 0.25 μm process is required in order to secure a depth of focus for lithography, and the wafer diameter is also shifting to large diameters of 300 mm and 450 mm in terms of securing productivity. In such a large-diameter wafer, 0.
In order to satisfy the required performance of the 25 μm process, a wafer having a double-sided mirror surface is optimal. As a double-side polishing apparatus having a wafer diameter of 4 inches or 6 inches, for example, Japanese Patent Application Laid-Open No. 58-22400
For example, as disclosed in JP-A-2-9571, JP-A-5-169365, JP-A-9-109007, and JP-A-9-283474, the following mechanisms (I) to (VI) shown in FIG. A double-sided wafer double-side polishing apparatus having the same is used.
【０００３】（Ｉ）取付板２ａの下面に研磨布２ｂを貼
着した上定盤２、（II）前記上定盤を水平方向に回転さ
せる回転駆動機構３、（III)前記上定盤を上下方向に移
動させる昇降機構４、（IV）上定盤の取付板と略同一径
を有する取付板５ａの上面に研磨布５ｂを貼着した下定
盤５、（Ｖ）前記下定盤を水平方向に回転させる回転駆
動機構６、（VI）下定盤の上面に複数のウエハｗ収納部
７ａを設けた樹脂製テンプレ−ト７を、下定盤の回転と
は独立して太陽ギヤ−８とインタ−ナルギヤ−９で回転
自在に設けたウエハ収納機構、を有し上定盤と下定盤の
研磨布間に設けられたテンプレ−ト７内に複数のウエハ
を挟持させ、上定盤２と下定盤３とテンプレ−ト７を回
転させてウエハの両面を研磨する両面研磨装置。[0003] (I) an upper surface plate 2 having a polishing cloth 2b adhered to the lower surface of a mounting plate 2a; (II) a rotation drive mechanism 3 for rotating the upper surface plate in the horizontal direction; and (III) an upper surface plate. An elevating mechanism 4 for moving vertically, (IV) a lower platen 5 having an abrasive cloth 5b adhered to the upper surface of a mounting plate 5a having substantially the same diameter as the mounting plate of the upper platen, and (V) the lower platen in a horizontal direction. (VI) A resin template 7 provided with a plurality of wafer w storage portions 7a on the upper surface of a lower platen, and an interface with a sun gear 8 independently of rotation of the lower platen. A wafer accommodating mechanism rotatably provided by a null gear 9; a plurality of wafers being held in a template 7 provided between polishing cloths of an upper surface plate and a lower surface plate; A double-side polishing apparatus for rotating both sides of a wafer by rotating the template 3 and the template 7.
【０００４】また、８インチ（３００ｍｍ）径の両面研
削装置として、特開平９−２２５８１７号は、薄い樹脂
製キャリヤ−テンプレ−トの周縁を固定部剤に回転自在
に取付け、このテンプレ−トの上下に研磨布が貼着され
た上定盤、及び下定盤を配設し、キャリヤ−プレ−トの
孔内に収納されたウエハの上下面に研磨剤液を供給しな
がらテンプレ−ト、上定盤、及び下定盤を回転させてウ
エハ１葉を両面研磨する装置が開示される。As an 8-inch (300 mm) double-sided grinding machine, Japanese Patent Application Laid-Open No. 9-225817 discloses a thin resin carrier template which is rotatably mounted on a fixing agent. An upper platen and a lower platen on each of which a polishing cloth is stuck are provided, and a template is supplied while supplying an abrasive liquid to the upper and lower surfaces of the wafer stored in the holes of the carrier plate. An apparatus for polishing both sides of one wafer by rotating a platen and a lower platen is disclosed.
【０００５】かかる従来の両面研磨装置では、研磨中の
ウエハの研磨状態を目で観察することも、ウエハの肉厚
も測定することができず、研磨途中で運転を止めてウエ
ハの肉厚を測定して研磨済量を計算し、残りの研磨量、
残研磨時間を算出させ、運転を再開する必要があった。
近時、市場から完全自動化の要求が高くなり、研磨中、
ウエハの肉厚を測定し、目的の肉厚となったときを研磨
終点とする、あるいはレ−ザ−光線の反射率等で研磨状
態の研磨終点とする研磨終点測定機器を備えた自動研磨
装置の出現が望まれている。[0005] In such a conventional double-side polishing apparatus, the polishing state of the wafer being polished cannot be visually observed and the thickness of the wafer cannot be measured, and the operation is stopped during polishing to reduce the thickness of the wafer. Measure and calculate the polished amount, the remaining polished amount,
It was necessary to calculate the remaining polishing time and restart the operation.
Recently, the demand for full automation from the market has increased, and during polishing,
An automatic polishing apparatus equipped with a polishing end point measuring device that measures the thickness of a wafer and sets the polishing end point when the target thickness is reached, or sets the polishing end point in a polished state based on the reflectance of a laser beam. The emergence of is desired.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、ウエハの研
磨時に研磨されたウエハの表面の状態が目視できる、あ
るいはウエハの肉厚が測定できる両面研磨装置の提供を
目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a double-side polishing apparatus capable of visually observing the state of the surface of a polished wafer or measuring the thickness of the wafer when polishing the wafer.
【０００７】[0007]
【課題を解決するための手段】本発明の請求項１は、
（ａ）研磨剤液の流路を有する取付板の下面に研磨剤液
供給孔を有する研磨布を貼着した上定盤、（ｂ）前記上
定盤を水平方向に回転させる回転駆動機構、（ｃ）前記
上定盤を上下方向に移動させる昇降機構、（ｄ）上定盤
の取付板の研磨剤液の流路に、研磨剤液を供給する機
構、（ｅ）上定盤の取付板と略同一径を有する取付板の
上面に研磨布を貼着した下定盤、および、（ｆ）前記下
定盤を水平方向に回転させる回転駆動機構、を有し、上
定盤と下定盤の研磨布間にウエハを挟持させ、上定盤と
下定盤を回転させてウエハの両面を研磨する両面研磨装
置において、Means for Solving the Problems Claim 1 of the present invention is as follows.
(A) an upper surface plate in which a polishing cloth having an abrasive liquid supply hole is adhered to a lower surface of a mounting plate having an abrasive liquid flow path; (b) a rotation drive mechanism for rotating the upper surface plate in a horizontal direction; (C) a mechanism for vertically moving the upper surface plate, (d) a mechanism for supplying an abrasive liquid to the flow path of the abrasive liquid on the mounting plate of the upper surface plate, and (e) mounting of the upper surface plate. A lower platen having an abrasive cloth adhered to an upper surface of a mounting plate having substantially the same diameter as the plate; and (f) a rotation drive mechanism for rotating the lower platen in a horizontal direction. In a double-side polishing apparatus for holding a wafer between polishing cloths and rotating an upper platen and a lower platen to polish both surfaces of the wafer,
【０００８】次のとを特徴とするウエハの両面研磨
装置を提供するものである。 ウエハの径は、上定盤、下定盤の径の５／８から７／
８の径を有する。 研磨時、軸心を同じくして回転する上定盤、下定盤よ
り外にウエハの一部が露出されるようにウエハは上定盤
と下定盤間に挟持され、かつ、ウエハを水平方向に回転
させるウエハ回転機構を上定盤、下定盤の外側であっ
て、ウエハの周縁に設ける。An object of the present invention is to provide a wafer double-side polishing apparatus characterized by the following. The diameter of the wafer is 5/8 to 7 / of the diameter of the upper and lower platens.
It has a diameter of 8. During polishing, the wafer is sandwiched between the upper and lower platens so that a part of the wafer is exposed outside the upper and lower platens that rotate with the same axis, and the wafer is held horizontally. A wafer rotating mechanism for rotating is provided outside the upper surface plate and the lower surface plate and on the periphery of the wafer.
【０００９】かかる構成とすることにより、ウエハ研磨
途中でウエハの肉厚を測定したり、ウエハの外観を観察
することができる。本発明の請求項２は、更に上定
盤、下定盤の外側であって、ウエハの周縁にウエハの端
部を研磨する回転研磨パッドまたは回転砥石を備えるこ
とを特徴とする、両面研磨装置を提供するものである。
かかる構成とすることによりウエハの表裏両面のほかに
端面も同時に研削または研磨できる。With this configuration, the thickness of the wafer can be measured during the polishing of the wafer, and the appearance of the wafer can be observed. Claim 2 of the present invention further comprises an upper surface plate, a lower surface plate, a rotating polishing pad or a rotating grindstone for polishing the edge of the wafer at the periphery of the wafer, a double-side polishing apparatus, To provide.
With this configuration, not only the front and back surfaces of the wafer but also the end surface can be simultaneously ground or polished.
【００１０】本発明の請求項３は、前記両面研磨装置
は、上定盤の中心部の下面であって、ウエハの回転軌跡
の外周縁に当たる部分に、ウエハの端面を研磨する研磨
ロールまたは砥石が設けられていることを特徴とする、
両面研磨装置を提供するものである。かかる構成とする
ことにより、研磨時のウエハのずれが防止され、ウエハ
端面の研磨速度が向上する。A third aspect of the present invention is directed to the double-side polishing apparatus, wherein the polishing roll or the grindstone for polishing an end surface of the wafer is provided on a lower surface of a center portion of the upper platen and at a portion corresponding to an outer peripheral edge of a rotation locus of the wafer. Is provided,
A double-side polishing apparatus is provided. With such a configuration, the displacement of the wafer during polishing is prevented, and the polishing speed of the wafer end surface is improved.
【００１１】本発明の請求項４は、前記両面研磨装置に
おいて、上定盤と下定盤の中央部の空所には、ウエハの
端面を研磨する研磨ロ−ルまたは砥石が設けられている
装置を提供するものである。かかる構成とすることによ
り、研磨時のウエハのずれが防止され、ウエハ端面の研
磨速度が向上する。According to a fourth aspect of the present invention, in the double-side polishing apparatus, a polishing roll or a grindstone for polishing an end surface of a wafer is provided in a central space between the upper and lower lapping plates. Is provided. With such a configuration, the displacement of the wafer during polishing is prevented, and the polishing speed of the wafer end surface is improved.
【００１２】[0012]
【作用】研磨されているウエハが上定盤、下定盤からは
み出しているので、ウエハの肉厚の測定、ウエハ表裏面
の観察が可能となった。Since the polished wafer protrudes from the upper surface plate and the lower surface plate, it is possible to measure the thickness of the wafer and to observe the front and back surfaces of the wafer.
【００１３】[0013]
【発明の実施の形態】以下、図面を用いて本発明をさら
に詳細に説明する。図１は、本発明の両面研磨装置の斜
視図、図２は両面研磨装置の断面図、図３は他の例を示
す両面研磨装置の断面図である。図１および図２におい
て、１は両面研磨装置、ｗはウエハ、２は上定盤、２ａ
は取付板、２ｂは研磨布、３は軸、４はエヤ−シリンダ
−、５は下定盤、５ａは取付板、５ｂは研磨布、６は
軸、１０は上定盤の回転機構で、１０ａは上定盤の取付
板に備えられた歯車、１０ｂはモ−タ−Ｍ１の回転駆動
をこの歯車に伝達する歯車、１１は下定盤の回転機構
で、１１ａは下定盤の取付板に備えられた歯車、１１ｂ
はモ−タ−Ｍ２の回転駆動を歯車１１ａに伝達する歯
車、１２は研磨剤液の供給管で、ポンプＰで貯槽１３内
の研磨剤液１３ａを上定盤の取付板２ａ上に供給する。
供給された研磨剤液は、孔１４より取付板２ａに設けら
れた流路１４ａ、チャンバ−１４ｂ、研磨布２ｂに穿た
れた孔１４ｃを経てウエハｗ面上、下定盤の研磨布５ｂ
上に供給される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a perspective view of a double-side polishing apparatus according to the present invention, FIG. 2 is a cross-sectional view of the double-side polishing apparatus, and FIG. 3 is a cross-sectional view of another example of the double-side polishing apparatus. 1 and 2, 1 is a double-side polishing apparatus, w is a wafer, 2 is an upper surface plate, 2a
Is a mounting plate, 2b is a polishing cloth, 3 is a shaft, 4 is an air cylinder, 5 is a lower platen, 5a is a mounting plate, 5b is a polishing cloth, 6 is a shaft, 10 is an upper platen rotating mechanism, 10a Is a gear provided on the mounting plate of the upper stool, 10b is a gear for transmitting the rotational drive of the motor M1 to this gear, 11 is a rotating mechanism of the lower stool, and 11a is provided on a mounting plate of the lower stool. Gear, 11b
Is a gear for transmitting the rotational drive of the motor M2 to the gear 11a, and 12 is an abrasive liquid supply pipe, which supplies the abrasive liquid 13a in the storage tank 13 by the pump P onto the mounting plate 2a of the upper platen. .
The supplied abrasive liquid passes through the flow path 14a provided in the mounting plate 2a from the hole 14, the chamber 14b, and the hole 14c formed in the polishing cloth 2b.
Supplied above.
【００１４】１５，１５，１５はウエハのドライブロ−
ルでモ−タ−Ｍ３，Ｍ３，Ｍ３により駆動される。１６
はウエハ端面の研磨ロ−ルで、モ−タ−Ｍ４で回転駆動
される軸１６ａの周囲に研磨布または砥石１６ｂが取り
付けてある。１７は触探式肉厚測定機器、１８は軸３ま
たは軸６に備え付けた研磨布または砥石でウエハの水平
方向のズレ防止の機能をなすと共にウエハ端面を研磨す
る機能もなす。１９は冷却液供給管、２０はチャンバ−
である。Reference numerals 15, 15, and 15 denote wafer drive rollers.
Driven by the motors M3, M3 and M3. 16
Is a polishing roll on the end face of the wafer, and a polishing cloth or a grindstone 16b is mounted around a shaft 16a which is driven to rotate by a motor M4. Reference numeral 17 denotes a tactile thickness measuring device, and reference numeral 18 denotes a polishing cloth or a grindstone provided on the shaft 3 or the shaft 6, which has a function of preventing horizontal displacement of the wafer and a function of polishing the wafer end face. 19 is a coolant supply pipe, 20 is a chamber
It is.
【００１５】図３は別の態様の両面研磨装置１を示すも
ので、軸３をモ−タ−Ｍ１で回転駆動、軸６をモ−タ−
Ｍ２で回転駆動するように変更したのと、研磨剤液１３
ａを中空軸３内に設けた管２１を経由してウエハ上面、
下定盤５の研磨布５ｂ上に供給できるようにしたもので
ある。２２はロ−タリ−ジョイントである。上定盤、下
定盤の径は略同一とし、ウエハ径は上定盤、下定盤の径
の５／８〜７／８が好ましい。FIG. 3 shows another embodiment of a double-side polishing apparatus 1 in which the shaft 3 is driven to rotate by a motor M1 and the shaft 6 is driven by a motor.
The change to the rotation drive at M2 and the polishing liquid 13
a through the tube 21 provided in the hollow shaft 3,
The lower platen 5 can be supplied onto the polishing cloth 5b. 22 is a rotary joint. The upper platen and the lower platen have substantially the same diameter, and the wafer diameter is preferably 5/8 to 7/8 of the diameter of the upper platen and the lower platen.
【００１６】かかる両面研磨装置１を用いてウエハを両
面研磨するには、ウエハｗを下定盤の研磨布５ｂ上に載
せ、ドライブロ−ル１５，１５，１５をウエハ端面に押
し当て、ついで昇降機構のエヤ−シリンダ−を下降させ
て上定盤の研磨布２ｂをウエハに押し当てる。研磨剤液
を供給しながら上定盤２、下定盤５、ウエハｗを回転
し、ウエハの両面研磨を行う。ウエハ研磨中、ウエハの
厚みを肉厚測定機器１７で測定し、その値をＣＰＵのＲ
ＡＭに信号で連絡し、演算装置でＲＯＭに入力されてい
たウエハの厚み、最終厚みと照合し、研磨された量、残
った研磨量、研磨時間を算出し、信号を両面研磨装置に
送り、残り量の研磨を行う。In order to polish a wafer on both sides using the double-side polishing apparatus 1, a wafer w is placed on a polishing pad 5b of a lower platen, and drive rolls 15, 15, 15 are pressed against the end face of the wafer, and then moved up and down. The air cylinder of the mechanism is lowered, and the polishing pad 2b of the upper platen is pressed against the wafer. The upper surface plate 2, the lower surface plate 5, and the wafer w are rotated while supplying the polishing agent liquid, and the both surfaces of the wafer are polished. During the polishing of the wafer, the thickness of the wafer is measured by the thickness measuring device 17, and the value is measured by the CPU R.
The signal is sent to the AM, the arithmetic unit compares the thickness of the wafer and the final thickness that have been input to the ROM, calculates the amount polished, the remaining polishing amount, and the polishing time, and sends a signal to the double-side polishing device. Polish the remaining amount.
【００１７】研磨布としては、ウレタン発泡シ−ト、ポ
リビニルアルコ−ル、ポリエステル、ナイロン等の繊維
の不織布等が挙げられる。研磨剤液としては、シリカ、
アルミナ、ベ−マイト、酸化セリウム、ダイヤモンド等
の砥粒を水性溶媒に分散させた研磨剤スラリ−が使用で
き、研磨剤スラリ−には界面活性剤、ポリエチレングル
コ−ル、キレ−ト剤、酸化剤、ｐＨ調整剤等が配合され
ることもある。上定盤、下定盤の回転数は、１０〜３０
０ｒｐｍ、好ましくは２５〜１５０ｒｐｍで、ウエハの
回転は当然これよりも遅い。上定盤と下定盤の回転数は
同一であっても異っていてもよい。ウエハにかかる押圧
は、１０〜１００ｇ／ｃｍ2 が一般である。Examples of the polishing cloth include a non-woven fabric of fibers such as urethane foam sheet, polyvinyl alcohol, polyester, and nylon. As an abrasive liquid, silica,
An abrasive slurry in which abrasive grains such as alumina, boehmite, cerium oxide, and diamond are dispersed in an aqueous solvent can be used. The abrasive slurry includes a surfactant, polyethylene glycol, a chelating agent, and an oxidizing agent. Agents, pH adjusters and the like may be added. The rotation speed of the upper surface plate and the lower surface plate is 10-30.
At 0 rpm, preferably 25-150 rpm, the rotation of the wafer is naturally slower. The number of rotations of the upper stool and the lower stool may be the same or different. The pressure applied to the wafer is generally 10 to 100 g / cm 2 .
【００１８】研磨量は対象とするウエハにより異なる
が、１〜４０μｍが一般である。上定盤２、下定盤５の
回転によりウエハｗはこれら定盤の外側に移動する遠心
力が働くが、ウエハはドライブロール１５，１５，１５
により拘束されるので研磨装置１より飛び出すことはな
い。なお、上定盤と下定盤の中央部の空所にウエハ端面
に当接する研磨ロールまたは砥石１８を設ければ、ウエ
ハ端面の研磨速度は向上し、かつ、ウエハの水平方向の
移動が拘束される。上記例では、肉厚測定機器での自動
研磨の例を記載したが、上定盤、下定盤よりはみ出して
いるウエハの表面にレ−ザ−光を照射して反射光量を吸
光機器で読み取り研磨状態を管理する自動研磨方法（特
開平４５−３０９５５９号、同１０−１６０４２０
号、）でも、レ−ザ−光に代えて蛍光Ｘ線を利用してす
る研磨状態を管理する自動研磨方法（特開平８−２１３
３５１号）でも可能である。The amount of polishing varies depending on the target wafer, but is generally 1 to 40 μm. The rotation of the upper stool 2 and the lower stool 5 causes a centrifugal force to move the wafer w to the outside of the stool, but the wafers are driven by the drive rolls 15, 15, 15.
And does not jump out of the polishing apparatus 1. If a polishing roll or a grindstone 18 is provided in the center of the upper and lower stools to contact the wafer end face, the polishing speed of the wafer end face is improved, and the horizontal movement of the wafer is restricted. You. In the above example, an example of automatic polishing with a thickness measuring device was described. However, the surface of the wafer protruding from the upper platen and the lower platen was irradiated with laser light, and the amount of reflected light was read by an absorption device and polished. Automatic polishing method for managing the state (JP-A-45-309559, JP-A-10-160420)
), An automatic polishing method for managing a polishing state using fluorescent X-rays instead of laser light (Japanese Patent Laid-Open No. 8-213)
351) is also possible.
【００１９】[0019]
【発明の効果】本発明の両面研磨装置は、上定盤、下定
盤よりはみ出させてウエハを両面研磨するので、研磨
中、ウエハの研磨状態を観察しながら研磨を行うことが
でき、完全自動化が可能である。また、ウエハ端面の研
磨も同時に行うことができる。According to the double-side polishing apparatus of the present invention, since the wafer is double-side polished by protruding from the upper and lower lapping plates, the polishing can be performed while the polishing state of the wafer is being observed during the polishing. Is possible. Further, polishing of the wafer end surface can be performed at the same time.
【図１】本発明の両面研磨装置の斜視図である。FIG. 1 is a perspective view of a double-side polishing apparatus according to the present invention.
【図２】図１の両面研磨装置の断面図である。FIG. 2 is a sectional view of the double-side polishing apparatus of FIG.
【図３】別の態様を示す両面研磨装置の断面図である。FIG. 3 is a sectional view of a double-side polishing apparatus showing another embodiment.
【図４】従来の両面研磨装置の平面図である。FIG. 4 is a plan view of a conventional double-side polishing apparatus.
１ 両面研磨装置 ｗ ウエハ ２ 上定盤 ２ｂ 研磨布 ４ エヤ−シリンダ− ５ 下定盤 ５ｂ 研磨布 １０ 上定盤回転機構 １１ 下定盤回転機構 １４ 研磨剤液供給孔 １５ ウエハドライブロ−ル １６ ウエハ端面研磨ロ−ル １７ 肉厚測定機器 １８ 研磨布または砥石 DESCRIPTION OF SYMBOLS 1 Double-side polishing apparatus w Wafer 2 Upper surface plate 2b Polishing cloth 4 Air cylinder 5 Lower surface plate 5b Polishing cloth 10 Upper surface rotating mechanism 11 Lower surface rotating mechanism 14 Abrasive liquid supply hole 15 Wafer drive roll 16 Wafer end face Polishing roll 17 Thickness measuring device 18 Polishing cloth or whetstone
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C049 AA07 AA12 AA16 AB06 AC02 AC04 BA07 BB02 CA01 CB03 3C058 AA03 AA07 AA12 AA16 AB06 AC02 AC04 BA07 BB02 CB03 DA02 DA17 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C049 AA07 AA12 AA16 AB06 AC02 AC04 BA07 BB02 CA01 CB03 3C058 AA03 AA07 AA12 AA16 AB06 AC02 AC04 BA07 BB02 CB03 DA02 DA17
Claims (4)
下面に研磨剤液供給孔を有する研磨布を貼着した上定
盤、 （ｂ）前記上定盤を水平方向に回転させる回転駆動機
構、 （ｃ）前記上定盤を上下方向に移動させる昇降機構、 （ｄ）上定盤の取付板の研磨剤液の流路に、研磨剤液を
供給する機構、 （ｅ）上定盤の取付板と略同一径を有する取付板の上面
に研磨布を貼着した下定盤、および、 （ｆ）前記下定盤を水平方向に回転させる回転駆動機
構、 を有し、上定盤と下定盤の研磨布間にウエハを挟持さ
せ、上定盤と下定盤を回転させてウエハの両面を研磨す
る両面研磨装置において、 次のとを特徴とするウエハの両面研磨装置。 ウエハの径は、上定盤、下定盤の径の５／８から７／
８の径を有する。 研磨時、軸心を同じくして回転する上定盤、下定盤よ
り外にウエハの一部が露出されるようにウエハは上定盤
と下定盤間に挟持され、かつ、ウエハを水平方向に回転
させるウエハ回転機構を上定盤、下定盤の外側であっ
て、ウエハの周縁に設ける。1. An upper platen having an abrasive plate having an abrasive liquid supply hole adhered to a lower surface of a mounting plate having an abrasive liquid flow path, and (b) rotating the upper platen in a horizontal direction. (C) an elevating mechanism for moving the upper platen in the vertical direction, (d) a mechanism for supplying the abrasive liquid to the flow path of the abrasive liquid on the mounting plate of the upper platen, (e) A lower platen having a polishing cloth adhered to the upper surface of a mounting plate having substantially the same diameter as the mounting plate of the upper platen; and (f) a rotation drive mechanism for rotating the lower platen in a horizontal direction. A double-side polishing apparatus for polishing both sides of a wafer by holding a wafer between polishing cloths of a platen and a lower platen, and rotating the upper platen and the lower platen, comprising: The diameter of the wafer is 5/8 to 7 / of the diameter of the upper and lower platens.
It has a diameter of 8. During polishing, the wafer is sandwiched between the upper and lower platens so that a part of the wafer is exposed outside the upper and lower platens that rotate with the same axis, and the wafer is held horizontally. A wafer rotating mechanism for rotating is provided outside the upper surface plate and the lower surface plate and on the periphery of the wafer.
の外側であって、ウエハの周縁にウエハの端部を研磨す
る回転研磨パッドまたは回転砥石を備えることを特徴と
する、請求項１に記載の両面研磨装置。2. The double-side polishing apparatus further comprises a rotary polishing pad or a rotary grindstone on the outer periphery of the wafer, which is outside the upper surface plate and the lower surface plate, for polishing the edge of the wafer. 2. The double-side polishing apparatus according to 1.
であって、ウエハの回転軌跡の外周縁に当たる部分に、
ウエハの端面を研磨する研磨ロールまたは砥石が設けら
れていることを特徴とする、請求項１に記載の両面研磨
装置。3. A double-side polishing apparatus includes: a lower surface of a central portion of an upper surface plate, which is located at an outer peripheral edge of a rotation locus of a wafer;
2. The double-side polishing apparatus according to claim 1, wherein a polishing roll or a grindstone for polishing an end face of the wafer is provided.
エハの端面を研磨する研磨ロ−ルまたは砥石が設けられ
ている、請求項１に記載の両面研磨装置。4. The double-side polishing apparatus according to claim 1, wherein a polishing roll or a grindstone for polishing an end surface of the wafer is provided in a central space between the upper surface plate and the lower surface plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33842498A JP2000141214A (en) | 1998-11-13 | 1998-11-13 | Double side grinder of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33842498A JP2000141214A (en) | 1998-11-13 | 1998-11-13 | Double side grinder of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000141214A true JP2000141214A (en) | 2000-05-23 |
Family
ID=18318030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33842498A Pending JP2000141214A (en) | 1998-11-13 | 1998-11-13 | Double side grinder of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000141214A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002346918A (en) * | 2001-05-29 | 2002-12-04 | Speedfam Co Ltd | Both surface polishing device |
| CN100364062C (en) * | 2004-03-11 | 2008-01-23 | 硅电子股份公司 | Device for two-sided lapping wafer type workpiece simultaneously |
| CN117086774A (en) * | 2023-10-19 | 2023-11-21 | 新乡市斯凯夫机械有限公司 | Special grinding machine and grinding process for ceramic parts |
-
1998
- 1998-11-13 JP JP33842498A patent/JP2000141214A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002346918A (en) * | 2001-05-29 | 2002-12-04 | Speedfam Co Ltd | Both surface polishing device |
| CN100364062C (en) * | 2004-03-11 | 2008-01-23 | 硅电子股份公司 | Device for two-sided lapping wafer type workpiece simultaneously |
| CN117086774A (en) * | 2023-10-19 | 2023-11-21 | 新乡市斯凯夫机械有限公司 | Special grinding machine and grinding process for ceramic parts |
| CN117086774B (en) * | 2023-10-19 | 2024-01-05 | 新乡市斯凯夫机械有限公司 | Special grinding machine and grinding process for ceramic parts |
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