JP2000082792A - Manufacture of semiconductor storage - Google Patents
Manufacture of semiconductor storageInfo
- Publication number
- JP2000082792A JP2000082792A JP11203623A JP20362399A JP2000082792A JP 2000082792 A JP2000082792 A JP 2000082792A JP 11203623 A JP11203623 A JP 11203623A JP 20362399 A JP20362399 A JP 20362399A JP 2000082792 A JP2000082792 A JP 2000082792A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- ferroelectric film
- electrode
- amorphous
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、強誘電体記憶装置に係
り、半導体記憶装置構造、強誘電体膜構造、強誘電体記
憶装置の製造方法および強誘電体膜材料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric memory device, and more particularly to a semiconductor memory device structure, a ferroelectric film structure, a method of manufacturing a ferroelectric memory device, and a ferroelectric film material.
【０００２】[0002]
【従来の技術】従来、強誘電体記憶装置は、第１の電極
表面に結晶体から成る強誘電体膜が形成されて成り、該
強誘電体膜表面には第２の電極が形成されて成るのが通
例であった。2. Description of the Related Art Conventionally, a ferroelectric memory device has a structure in which a ferroelectric film made of a crystal is formed on a surface of a first electrode, and a second electrode is formed on the surface of the ferroelectric film. It was customary.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
によると、強誘電体記憶装置にリーク電流が流れ、記憶
時間や記憶寿命が短く、書き込み回数が少ないと云う課
題や、誘電率の制御が困難である等の課題があった。However, according to the above-mentioned prior art, a leak current flows in the ferroelectric memory device, so that the storage time and storage life are short and the number of times of writing is small, and the control of the dielectric constant is difficult. There were issues such as difficulty.
【０００４】本発明は、かかる従来技術の課題を解決す
る為の新しい強誘電体記憶装置構造、半導体記憶装置構
造、強誘電体膜構造、強誘電体記憶装置の製造方法およ
び強誘電体膜材料を提供する事を目的とする。The present invention provides a new ferroelectric memory device structure, a semiconductor memory device structure, a ferroelectric film structure, a method of manufacturing a ferroelectric memory device, and a ferroelectric film material for solving the problems of the prior art. The purpose is to provide.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成する為に、本発明は、強誘電体記憶装置に関
し、（１） 基板上の第１の電極表面に、結晶体から成
る第１の強誘電体膜とアモルファス体から成る第２の強
誘電体膜とを積層強誘電体膜として形成し、該積層強誘
電体膜表面に第２の電極を形成する手段を取る事、及び
（２） 半導体基板上の第１の電極表面に、結晶体から
成る第１の強誘電体膜とアモルファス体から成る第２の
強誘電体膜とを積層強誘電体膜として形成し、該積層強
誘電体膜表面に第２の電極を形成する手段を取る事、及
び（３） 基板上の第１の電極表面に、アモルファス体
から成る強誘電体膜と結晶体から成る強誘電体膜とを積
層強誘電体膜として形成し、該積層強誘電体膜表面に第
２の電極を形成する手段を取る事、及び（４） 基板上
の第１の電極表面に、結晶体から成る強誘電体膜とアモ
ルファス体から成る強誘電体膜と結晶体から成る強誘電
体膜とを積層強誘電体膜として形成し、該積層強誘電体
膜表面に第２の電極を形成する手段を取る事、及び
（５） 基板上の第１の電極表面に、アモルファス体か
ら成る強誘電体膜と結晶体から成る強誘電体膜とアモル
ファス体から成る強誘電体膜とを積層強誘電体膜として
形成し、該積層強誘電体膜表面に第２の電極を形成する
手段を取る事、及び（６） 結晶体から成る第１の強誘
電体膜とアモルファス体から成る第２の強誘電体膜とを
同一強誘電体材料と成す手段を取る事、及び（７） 結
晶体から成る第１の強誘電体膜とアモルファス体から成
る第２の強誘電体膜とを異なった強誘電体材料と成す手
段を取る事、等の手段を取る事等である。Means for Solving the Problems To solve the above problems and achieve the above object, the present invention relates to a ferroelectric memory device, and (1) a method of forming a crystal on a surface of a first electrode on a substrate. Forming a first ferroelectric film composed of the first ferroelectric film and a second ferroelectric film composed of an amorphous body as a laminated ferroelectric film, and taking means for forming a second electrode on the surface of the laminated ferroelectric film. And (2) forming a first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material as a laminated ferroelectric film on the surface of the first electrode on the semiconductor substrate; Means for forming a second electrode on the surface of the laminated ferroelectric film; and (3) providing a ferroelectric film composed of an amorphous ferroelectric film and a crystalline material on the surface of the first electrode on the substrate. Forming a second electrode on the surface of the laminated ferroelectric film. And (4) a ferroelectric film composed of a crystalline ferroelectric film, an amorphous ferroelectric film, and a crystalline ferroelectric film laminated on the surface of the first electrode on the substrate. Means for forming a second electrode on the surface of the laminated ferroelectric film, and (5) forming a ferroelectric film and a crystal made of an amorphous material on the surface of the first electrode on the substrate. Forming a ferroelectric film composed of an amorphous body and a ferroelectric film composed of an amorphous material as a laminated ferroelectric film, and taking means for forming a second electrode on the surface of the laminated ferroelectric film; and (6) Means for forming the first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material with the same ferroelectric material; and (7) a first ferroelectric material made of a crystalline material The body film and the second ferroelectric film made of an amorphous body are made of different ferroelectric materials. Taking the means, it is it like to take the means and the like.
【０００６】[0006]
【実施例】以下、実施例により本発明を詳述する。The present invention will be described below in detail with reference to examples.
【０００７】図１は本発明の強誘電体記憶装置の一実施
例を示す要部の断面図である。すなわち、基板１０１の
表面には第１の電極１０２が形成され、該第１の電極１
０２上には第１の強誘電体結晶体（単結晶体または多結
晶体）１０３が形成され、該第１の強誘電体結晶体上に
は第１のアモルファス強誘電体１０４が形成され、該第
１のアモルファス強誘電体１０４上には第２の電極１０
５が形成されて成る。具体的には、セラミック、ガラ
ス、半導体あるいはプリント基板等の基板上に１ミクロ
ン厚の白金等から成る酸化され難い金属電極をスパッタ
法により形成し、ホトリゾグラフィとイオンエッチ等に
よりパターン形成し、次いでチタン酸バリュウムやジル
コニュウム・チタン酸鉛などの強誘電体を１ミクロン厚
程度に形成し、５００℃で３０分程度の酸素雰囲気中で
のアニールにより単結晶または多結晶の結晶体となし、
次いでやはりチタン酸バリュウムやジルコニュウム・チ
タン酸鉛などの強誘電体を１ミクロン厚程度に形成して
アモルファス強誘電体となし、次いで１ミクロン厚の白
金等から成る酸化され難い金属電極をスパッタ法により
形成する事により強誘電体記憶装置となす事が出来る。FIG. 1 is a sectional view of a main part showing an embodiment of a ferroelectric memory device according to the present invention. That is, the first electrode 102 is formed on the surface of the substrate 101 and the first electrode 1
02, a first ferroelectric crystal (single crystal or polycrystal) 103 is formed, and a first amorphous ferroelectric 104 is formed on the first ferroelectric crystal. A second electrode 10 is formed on the first amorphous ferroelectric 104.
5 are formed. Specifically, on a substrate such as ceramic, glass, semiconductor, or printed circuit board, a non-oxidizable metal electrode made of platinum or the like having a thickness of 1 micron is formed by a sputtering method, and a pattern is formed by photolithography and ion etching. Next, a ferroelectric material such as barium titanate or zirconium / lead titanate is formed to a thickness of about 1 micron, and is annealed in an oxygen atmosphere at 500 ° C. for about 30 minutes to form a single crystal or polycrystal.
Next, a ferroelectric such as barium titanate or zirconium / lead titanate is formed to a thickness of about 1 micron to form an amorphous ferroelectric substance. By forming, a ferroelectric memory device can be formed.
【０００８】図２は本発明の半導体記憶装置の一実施例
を示す要部の断面図である。すなわち、シリコン等から
成る半導体基板２０１の表面には１ミクロン厚程度のシ
リコン酸化膜から成る酸化膜２０２が形成され、ホト・
エッチングにより窓開けされた後、ＣＶＤ法により１ミ
クロン厚程度のシリコン窒化膜からなる窒化膜２０３を
形成し、該窒化膜２０３もホト・エッチングにより窓開
けされ下地シリコン基板２０１との間にコンタクト穴を
形成後、前記図１と同様に第１の電極２０４、第１の強
誘電体結晶体２０５、第１のアモルファス強誘電体２０
６及び第２の電極２０７が形成されて成る。ここに、シ
リコン窒化膜からなる窒化膜２０３は酸素アニール時の
シリコンとシリコン酸化膜界面準位密度の増加を防止す
る為に形成されたものである。FIG. 2 is a sectional view of a main part showing one embodiment of the semiconductor memory device of the present invention. That is, an oxide film 202 made of a silicon oxide film having a thickness of about 1 micron is formed on the surface of a semiconductor substrate 201 made of silicon or the like.
After the window is opened by etching, a nitride film 203 made of a silicon nitride film having a thickness of about 1 micron is formed by the CVD method. The nitride film 203 is also opened by photoetching and has a contact hole with the underlying silicon substrate 201. After the formation of the first electrode 204, the first ferroelectric crystal 205, and the first amorphous ferroelectric 20 as in FIG.
6 and the second electrode 207 are formed. Here, the nitride film 203 made of a silicon nitride film is formed to prevent an increase in the interface state density of silicon and a silicon oxide film during oxygen annealing.
【０００９】図３は本発明による強誘電体記憶装置の製
造方法の一実施例を示す要部の断面図である。すなわ
ち、基板３０１の表面には第１の電極３０２が形成さ
れ、該第１の電極３０２上には第１のアモルファス強誘
電体３０３が形成され、該第１のアモルファス強誘電体
３０３上には第１の強誘電体結晶体（単結晶体または多
結晶体）３０４が形成され、該第１の強誘電体結晶体上
には第２の電極３０５が形成されて成る。具体的には第
１のアモルファス強誘電体３０３は図１の実施例と同様
にスパッタ法により形成され、第１の強誘電体結晶体３
０４はやはりスパッタ法により形成された後、レーザ・
アニールやランプ・アニールの如く高速で表面層のみを
加熱する方法により結晶化される。FIG. 3 is a sectional view of an essential part showing one embodiment of a method of manufacturing a ferroelectric memory device according to the present invention. That is, a first electrode 302 is formed on the surface of the substrate 301, a first amorphous ferroelectric substance 303 is formed on the first electrode 302, and a first amorphous ferroelectric substance 303 is formed on the first amorphous ferroelectric substance 303. A first ferroelectric crystal (single crystal or polycrystal) 304 is formed, and a second electrode 305 is formed on the first ferroelectric crystal. More specifically, the first amorphous ferroelectric substance 303 is formed by a sputtering method as in the embodiment of FIG.
04 is also formed by a sputtering method,
It is crystallized by a method of heating only the surface layer at a high speed, such as annealing or lamp annealing.
【００１０】図４は本発明による強誘電体記憶装置の製
造方法の他の実施例を示す要部の断面図である。すなわ
ち、基板４０１の表面には第１の電極４０２が形成さ
れ、該第１の電極４０２上には第１のアモルファス強誘
電体４０３が形成され、該第１のアモルファス強誘電体
４０３上には第１の強誘電体結晶体（単結晶体または多
結晶体）４０４が形成され、該第１の強誘電体結晶体上
には第２のアモルファス強誘電体４０５が形成され、該
第２のアモルファス強誘電体４０５上には第２の電極４
０６が形成されて成る。具体的には第１のアモルファス
強誘電体４０３は図１の実施例と同様にスパッタ法によ
り形成され、第１の強誘電体結晶体４０４はやはりスパ
ッタ法により形成された後、レーザ・アニールやランプ
・アニールの如く高速で表面層のみを加熱する方法によ
り結晶化され、第２のアモルファス強誘電体４０５はや
はりスパッタ法により形成されて成る。FIG. 4 is a sectional view of a main part showing another embodiment of the method of manufacturing a ferroelectric memory device according to the present invention. That is, a first electrode 402 is formed on the surface of the substrate 401, a first amorphous ferroelectric 403 is formed on the first electrode 402, and a first amorphous ferroelectric 403 is formed on the first amorphous ferroelectric 403. A first ferroelectric crystal (single crystal or polycrystal) 404 is formed, a second amorphous ferroelectric 405 is formed on the first ferroelectric crystal, and the second The second electrode 4 is provided on the amorphous ferroelectric 405.
06 is formed. Specifically, the first amorphous ferroelectric 403 is formed by the sputtering method in the same manner as in the embodiment of FIG. 1, and the first ferroelectric crystal 404 is also formed by the sputtering method, followed by laser annealing or the like. Crystallization is performed by a method of heating only the surface layer at a high speed such as lamp annealing, and the second amorphous ferroelectric 405 is also formed by a sputtering method.
【００１１】図５は本発明の強誘電体記憶装置の製造方
法のその他の実施例を示す要部の断面図である。すなわ
ち、基板５０１の表面には第１の電極５０２が形成さ
れ、該第１の電極５０２上には第１の強誘電体結晶体
（単結晶体または多結晶体）５０３が形成され、該第１
の強誘電体結晶体上には第１のアモルファス強誘電体５
０４が形成され、該第１のアモルファス強誘電体５０４
上には第２の強誘電体結晶体５０６が形成され、該第２
の強誘電体結晶体５０６上には第２の電極５０６が形成
されて成る。具体的には第１のアモルファス強誘電体５
０４は図１の実施例と同様にスパッタ法により形成さ
れ、第２の強誘電体結晶体５０５はやはりスパッタ法に
より形成された後、レーザ・アニールやランプ・アニー
ルの如く高速で短時間（１分以内）の表面層のみを加熱
する方法により結晶化されて成る。FIG. 5 is a sectional view of a main part showing another embodiment of the method of manufacturing a ferroelectric memory device according to the present invention. That is, a first electrode 502 is formed on the surface of the substrate 501, and a first ferroelectric crystal (single crystal or polycrystal) 503 is formed on the first electrode 502. 1
A first amorphous ferroelectric 5 on the ferroelectric crystal
04 is formed, and the first amorphous ferroelectric 504 is formed.
A second ferroelectric crystal 506 is formed thereon, and the second
A second electrode 506 is formed on the ferroelectric crystal 506 of FIG. Specifically, the first amorphous ferroelectric 5
1 is formed by the sputtering method in the same manner as in the embodiment of FIG. 1, and the second ferroelectric crystal 505 is also formed by the sputtering method. (Within minutes) by heating only the surface layer.
【００１２】尚、結晶体から成る第１の強誘電体膜とア
モルファス体から成る第２の強誘電体膜とを同一強誘電
体材料と成す事ができる。すなわち、第１の強誘電体結
晶体膜とアモルファス体から成る第２の強誘電体膜とを
チタン酸バリュウムやジルコニュウム・チタン酸鉛等の
いずれか等の同一材料と成す事が出来る。Incidentally, the first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material can be made of the same ferroelectric material. That is, the first ferroelectric crystal film and the second ferroelectric film made of an amorphous material can be made of the same material such as barium titanate or zirconium / lead titanate.
【００１３】又、結晶体から成る第１の強誘電体膜とア
モルファス体から成る第２の強誘電体膜とを異なった強
誘電体材料と成す事ができる。すなわち、第１の強誘電
体結晶体膜とアモルファス体から成る第２の強誘電体膜
とをチタン酸バリュウムやジルコニュウム・チタン酸鉛
等のいずれか等の異なった材料と成す事が出来る。The first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material can be made of different ferroelectric materials. That is, the first ferroelectric crystal film and the second ferroelectric film made of an amorphous material can be made of different materials such as barium titanate and zirconium / lead titanate.
【００１４】更に、強誘電体結晶体膜を異なった材料の
積層構造としたり、あるいはアモルファス強誘電体膜も
異なった材料の積層構造とする事も出来、いわゆるヘテ
ロジニアスな強誘電体接合構造も本発明の範中に入る事
となる。この様なヘテロジニアスな強誘電体接合構造は
誘電率の設計に自由度を増す効果がある。Further, the ferroelectric crystal film may have a laminated structure of different materials, or the amorphous ferroelectric film may have a laminated structure of different materials. A so-called heterogeneous ferroelectric junction structure is also available. It falls within the scope of the present invention. Such a heterogeneous ferroelectric junction structure has the effect of increasing the degree of freedom in designing the dielectric constant.
【００１５】[0015]
【発明の効果】本発明により、記憶時間や記憶寿命が長
く、書き込み回数が多く、誘電率の制御が容易な強誘電
体記憶装置構造、半導体記憶装置構造、強誘電体膜構
造、強誘電体記憶装置の製造方法および強誘電体膜材料
を提供する事が出来る効果がある。According to the present invention, a ferroelectric memory device structure, a semiconductor memory device structure, a ferroelectric film structure, and a ferroelectric material having a long storage time and a long storage life, a large number of writing operations, and easy control of a dielectric constant. There is an effect that a method of manufacturing a memory device and a ferroelectric film material can be provided.
【図１】 強誘電体記憶装置の一実施例を示す要部の断
面図である。FIG. 1 is a sectional view of a main part showing an embodiment of a ferroelectric memory device.
【図２】 半導体記憶装置の一実施例を示す要部の断面
図である。FIG. 2 is a sectional view of a main part showing one embodiment of a semiconductor memory device;
【図３】 強誘電体記憶装置の製造方法の一実施例を示
す要部の断面図である。FIG. 3 is a sectional view of a main part showing one embodiment of a method for manufacturing a ferroelectric memory device.
【図４】 強誘電体記憶装置の製造方法の他の実施例を
示す要部の断面図である。FIG. 4 is a sectional view of a main part showing another embodiment of the method for manufacturing a ferroelectric memory device.
【図５】 強誘電体記憶装置の製造方法のその他の実施
例を示す要部の断面図である。FIG. 5 is a sectional view of a main part showing another embodiment of the method for manufacturing a ferroelectric memory device.
１０１、３０１、４０１、５０１・・・基板 １０２、２０４、３０２、４０２、５０２・・・第１の
電極 １０３、２０５、３０４、４０４、５０３・・・第１の
強誘電体結晶体 １０４、２０６、３０３、４０３、５０４・・・第１の
アモルファス強誘電体 １０５、２０７、３０５、４０６、５０６・・・第２の
電極 ２０１・・・半導体基板 ２０２・・・酸化膜 ２０４・・・窒化膜 ４０５・・・第２のアモルファス強誘電体 ５０５・・・第２の強誘電体結晶体101, 301, 401, 501 ... substrate 102, 204, 302, 402, 502 ... first electrode 103, 205, 304, 404, 503 ... first ferroelectric crystal 104, 206 , 303, 403, 504: first amorphous ferroelectric substance 105, 207, 305, 406, 506: second electrode 201: semiconductor substrate 202: oxide film 204: nitride film 405: second amorphous ferroelectric 505: second ferroelectric crystal
【手続補正書】[Procedure amendment]
【提出日】平成１１年８月１２日（１９９９．８．１
２）[Submission date] August 12, 1999 (1999.8.1)
2)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】発明の名称[Correction target item name] Name of invention
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【発明の名称】 半導体記憶装置の製造方法Patent application title: Method of manufacturing semiconductor memory device
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００５[Correction target item name] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００５】[0005]
【課題を解決するための手段】また、本発明の半導体記
憶装置の製造方法は、半導体基板上に電極及び強誘電体
膜からなる強誘電体キャパシタが形成される半導体記憶
装置の製造方法であって、前記半導体基板上に酸化膜を
形成する工程と、前記酸化膜の所望の位置に開口穴を設
ける工程と、前記酸化膜上並びに前記開口内にシリコン
窒化膜を形成する工程と、前記開口内において前記半導
体基板とのコンタクトがとれるように前記シリコン窒化
膜に対して開口穴を形成する工程と、前記開口穴を含む
前記シリコン窒化膜上に強誘電体キャパシタを形成する
工程と、を有してなることを特徴とする。A method of manufacturing a semiconductor memory device according to the present invention is a method of manufacturing a semiconductor memory device in which a ferroelectric capacitor comprising an electrode and a ferroelectric film is formed on a semiconductor substrate. Forming an oxide film on the semiconductor substrate, providing an opening at a desired position in the oxide film, forming a silicon nitride film on the oxide film and in the opening, Forming a hole in the silicon nitride film so as to make contact with the semiconductor substrate, and forming a ferroelectric capacitor on the silicon nitride film including the hole. It is characterized by becoming.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】符号の説明[Correction target item name] Explanation of sign
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【符号の説明】 １０１、３０１、４０１、５０１・・・基板 １０２、２０４、３０２、４０２、５０２・・・第１の
電極 １０３、２０５、３０４、４０４、５０３・・・第１の
強誘電体結晶体 １０４、２０６、３０３、４０３、５０４・・・第１の
アモルファス強誘電体 １０５、２０７、３０５、４０６、５０６・・・第２の
電極 ２０１・・・半導体基板 ２０２・・・酸化膜 ２０３・・・窒化膜 ４０５・・・第２のアモルファス強誘電体 ５０５・・・第２の強誘電体結晶体[Description of Signs] 101, 301, 401, 501: Substrate 102, 204, 302, 402, 502: First electrode 103, 205, 304, 404, 503: First ferroelectric substance Crystals 104, 206, 303, 403, 504: first amorphous ferroelectrics 105, 207, 305, 406, 506: second electrodes 201: semiconductor substrate 202: oxide film 203 ... nitride film 405 ... second amorphous ferroelectric substance 505 ... second ferroelectric crystal
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 27/108 21/8242 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 27/108 21/8242
Claims (7)
ら成る第１の強誘電体膜とアモルファス体から成る第２
の強誘電体膜とが積層強誘電体膜として形成され、該積
層強誘電体膜表面には第２の電極が形成されて成る事を
特徴とする強誘電体記憶装置。1. A first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material are provided on a surface of a first electrode on a substrate.
And a ferroelectric film is formed as a laminated ferroelectric film, and a second electrode is formed on the surface of the laminated ferroelectric film.
晶体から成る第１の強誘電体膜とアモルファス体から成
る第２の強誘電体膜とが積層強誘電体膜として形成さ
れ、該積層強誘電体膜表面には第２の電極が形成されて
成る事を特徴とする強誘電体記憶装置。2. A first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material are formed as a laminated ferroelectric film on a surface of a first electrode on a semiconductor substrate. And a second electrode formed on the surface of the laminated ferroelectric film.
ァス体から成る強誘電体膜と結晶体から成る強誘電体膜
とが積層強誘電体膜として形成され、該積層強誘電体膜
表面には第２の電極が形成されて成る事を特徴とする強
誘電体記憶装置。3. A ferroelectric film made of an amorphous material and a ferroelectric film made of a crystalline material are formed on a surface of a first electrode on a substrate as a laminated ferroelectric film. A ferroelectric memory device, wherein a second electrode is formed on a surface.
ら成る強誘電体膜とアモルファス体から成る強誘電体膜
と結晶体から成る強誘電体膜とが積層強誘電体膜として
形成され、該積層強誘電体膜表面には第２の電極が形成
されて成る事を特徴とする強誘電体記憶装置。4. A ferroelectric film made of a crystalline material, a ferroelectric film made of an amorphous material, and a ferroelectric film made of a crystalline material are formed on a surface of a first electrode on a substrate as a laminated ferroelectric film. A ferroelectric memory device, wherein a second electrode is formed on the surface of the laminated ferroelectric film.
ァス体から成る強誘電体膜と結晶体から成る強誘電体膜
とアモルファス体から成る強誘電体膜とが積層強誘電体
膜として形成され、該積層強誘電体膜表面には第２の電
極が形成されて成る事を特徴とする強誘電体記憶装置。5. A ferroelectric film made of an amorphous material, a ferroelectric film made of a crystalline material, and a ferroelectric film made of an amorphous material are formed on a surface of a first electrode on a substrate as a laminated ferroelectric film. A ferroelectric memory device, wherein a second electrode is formed on the surface of the laminated ferroelectric film.
ルファス体から成る第２の強誘電体膜とが同一強誘電体
材料と成す事を特徴とする強誘電体記憶装置。6. A ferroelectric memory device wherein a first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material are made of the same ferroelectric material.
ルファス体から成る第２の強誘電体膜とが異なった強誘
電体材料と成す事を特徴とする強誘電体記憶装置。7. A ferroelectric memory device wherein a first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material are made of different ferroelectric materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203623A JP2000082792A (en) | 1999-07-16 | 1999-07-16 | Manufacture of semiconductor storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203623A JP2000082792A (en) | 1999-07-16 | 1999-07-16 | Manufacture of semiconductor storage |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11170260A Division JP2000031402A (en) | 1999-06-16 | 1999-06-16 | Ferroelectric memory device and semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000082792A true JP2000082792A (en) | 2000-03-21 |
Family
ID=16477118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11203623A Pending JP2000082792A (en) | 1999-07-16 | 1999-07-16 | Manufacture of semiconductor storage |
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| Country | Link |
|---|---|
| JP (1) | JP2000082792A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7960228B2 (en) | 2006-11-14 | 2011-06-14 | Fujitsu Semiconductor Limited | Methods of making a ferroelectric memory device having improved interfacial characteristics |
-
1999
- 1999-07-16 JP JP11203623A patent/JP2000082792A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7960228B2 (en) | 2006-11-14 | 2011-06-14 | Fujitsu Semiconductor Limited | Methods of making a ferroelectric memory device having improved interfacial characteristics |
| US8344434B2 (en) | 2006-11-14 | 2013-01-01 | Fujitsu Semiconductor Limited | Semiconductor device having ferroelectric capacitor |
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