JP2000077689A - Optical semiconductor device and module thereof - Google Patents

Optical semiconductor device and module thereof

Info

Publication number
JP2000077689A
JP2000077689A JP10245245A JP24524598A JP2000077689A JP 2000077689 A JP2000077689 A JP 2000077689A JP 10245245 A JP10245245 A JP 10245245A JP 24524598 A JP24524598 A JP 24524598A JP 2000077689 A JP2000077689 A JP 2000077689A
Authority
JP
Japan
Prior art keywords
light
resin sealing
optical semiconductor
semiconductor chip
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10245245A
Other languages
Japanese (ja)
Inventor
Hideo Kunii
秀雄 国井
Toshiyuki Take
俊之 武
Hiroshi Inoguchi
浩 井野口
Tsutomu Ishikawa
勉 石川
Masashi Arai
政至 新井
Hiroshi Kobori
浩 小堀
Hiroki Seyama
浩樹 瀬山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP10245245A priority Critical patent/JP2000077689A/en
Publication of JP2000077689A publication Critical patent/JP2000077689A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce in size a module or a set associated with a light emitting element and a light receiving element by thinning the profiles of both elements as thin as possible. SOLUTION: As a light emitting element and a light receiving element, semiconductor chips 23, 24 are used, and a resin sealer for sealing them is formed of a material transparent for light. Slots 27 are formed on a region for emitting light from the element and a region for receiving the light to the element, and reflecting surfaces 26 are formed therein. As a result, the light can be emitted from and incident to the slots 27 via a side face E. Further, this reflecting surfaces are mirror formed to suppress attenuation in the path in the resin.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、光半導体装置およ
びこれを実装した光半導体モジュールに関するもので、
特に光半導体装置の構造を薄くし、この薄い側面から光
を射出（または入射）させるものであり、これらを用い
た機器の小型化・薄型化を実現するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device and an optical semiconductor module mounting the same.
In particular, the structure of the optical semiconductor device is made thinner, and light is emitted (or made incident) from the thinner side surface, thereby realizing miniaturization and thinning of a device using the same.

【０００２】[0002]

【従来の技術】最近、サブノートパソコン、携帯情報端
末、電子スチルカメラ等のマルチメディア機器がめざま
しい発展を遂げている。2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed.

【０００３】しかも携帯機器は、年間７００万台も販売
され、約８割がＩｒＤＡ(InfraredData Association)規
格の赤外線方式を採用している。つまり外部機器と本体
との赤外線信号を介した送受信が必要で、そこには、赤
外線を発光する発光素子、赤外線を受光する受光素子が
必要となってくる。[0003] Moreover, 7 million portable devices are sold annually, and about 80% adopt the infrared system of the IrDA (InfraredData Association) standard. That is, transmission / reception between the external device and the main body via an infrared signal is required, and a light emitting element that emits infrared light and a light receiving element that receives infrared light are required.

【０００４】またＭＤやＣＤ等の光学式記録再生装置で
用いられる光学ヘッドは、光学記録媒体へビームを照射
して光学記録媒体からの変調されたビームを検出するこ
とにより、情報の記録や再生を行う。やはりここでも発
光素子、受光素子が必要となってくる。An optical head used in an optical recording / reproducing apparatus such as an MD or a CD irradiates a beam onto an optical recording medium to detect a modulated beam from the optical recording medium, thereby recording and reproducing information. I do. Also here, a light emitting element and a light receiving element are required.

【０００５】しかしこれら発光素子、受光素子は、小型
化が実現されていない。例えば、図４は、特公平７−２
８０８５号公報の技術を説明するもので、半導体レーザ
１が半導体基板２に直接配置され、断面形状が台形のプ
リズム３が半導体基板２に固定されている。なお図番４
は、光学記録媒体である。半導体レーザ１と対向してい
るプリズム３の傾斜面５は半透過反射面で、半導体基板
２と対接しているプリズム面６は、光検出器（受光素
子）７以外の部分が、また面６と対向しているプリズム
面８は、共に反射面となっている。However, these light emitting elements and light receiving elements have not been reduced in size. For example, FIG.
The technique described in Japanese Patent Application Publication No. 8085 is described in which a semiconductor laser 1 is directly disposed on a semiconductor substrate 2 and a prism 3 having a trapezoidal cross section is fixed to the semiconductor substrate 2. Figure number 4
Is an optical recording medium. The inclined surface 5 of the prism 3 facing the semiconductor laser 1 is a semi-transmissive reflecting surface, and the prism surface 6 in contact with the semiconductor substrate 2 has a portion other than the photodetector (light receiving element) 7. The prism surfaces 8 facing each other are reflection surfaces.

【０００６】半導体レーザ１から発光され、傾斜面５か
らプリズム３に入射したビーム９は、反射面６と８で反
射されてから、光検出器７で検出される。A beam 9 emitted from the semiconductor laser 1 and incident on the prism 3 from the inclined surface 5 is reflected by the reflecting surfaces 6 and 8 and detected by the photodetector 7.

【０００７】一方、図５は、赤外線データ通信モジュー
ル１１で、赤外線ＬＥＤ、ＬＥＤドライバ、ＰＩＮフォ
トダイオード、アンプ等が内蔵されている。例えば基板
に前記ＬＥＤが実装され、ここから射出される光は、レ
ンズ１２を介して外部へ放出される。また前記基板に実
装されたフォトダイオードには、レンズ１３を介してモ
ールド１１内に入射される。FIG. 5 shows an infrared data communication module 11, which includes an infrared LED, an LED driver, a PIN photodiode, an amplifier, and the like. For example, the LED is mounted on a substrate, and light emitted from the LED is emitted to the outside via the lens 12. The photodiode mounted on the substrate enters the mold 11 via the lens 13.

【０００８】[0008]

【発明が解決しようとする課題】前述のモジュールに於
いて、半導体基板上に光学機器が実装され、また半導体
基板がモールドされた上に更にレンズが実装されたりす
るため、これらを組み込んだセットは、小型化が実現で
きない問題があった。In the above-mentioned module, since an optical device is mounted on a semiconductor substrate, and a lens is mounted on the semiconductor substrate after being molded, a set incorporating these components is required. However, there has been a problem that miniaturization cannot be realized.

【０００９】そのため、本出願人は、特願平１０−１０
６３９９号により図２の如き、光半導体装置を出願し
た。これは、封止体の表面で光を曲折する手段を設け、
樹脂封止体の側面から光を出し入れするものある。しか
しながら外部からの光の外乱を受け、また反射面での反
射効率も高いものではなかった。For this reason, the present applicant has filed Japanese Patent Application No.
No. 6399 filed an optical semiconductor device as shown in FIG. This provides a means for bending light on the surface of the sealing body,
In some cases, light enters and exits from the side of the resin sealing body. However, it was not affected by external light disturbance and the reflection efficiency on the reflection surface was not high.

【００１０】[0010]

【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、第１に、樹脂封止体の側面より入射された
前記光が前記受光面に入射するように反射面を設け、こ
の反射面を、実質鏡面仕上げすることで、側面に入射し
た光を効率よく受光面に入射させることができる。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and firstly, a reflection surface is provided so that the light incident from the side surface of the resin sealing body is incident on the light receiving surface. By making the reflecting surface substantially mirror-finished, light incident on the side surface can be efficiently incident on the light receiving surface.

【００１１】第２に、発光面より発光された前記光が前
記樹脂封止体の側面から発光するように反射面を設け、
反射面を、実質鏡面仕上げすることで、発光面から発光
される光を効率よく反射させ、前記側面から射出する事
ができる。Second, a reflecting surface is provided so that the light emitted from the light emitting surface is emitted from a side surface of the resin sealing body.
When the reflecting surface is substantially mirror-finished, light emitted from the light emitting surface can be efficiently reflected and emitted from the side surface.

【００１２】第３に、発光面を、０．５μｍ以下の表面
粗度にする事で、光りの減衰を抑制させることができ
る。Third, by making the light emitting surface have a surface roughness of 0.5 μm or less, light attenuation can be suppressed.

【００１３】第４に、発光面を除いたほぼ全表面を梨地
仕上げすることで、金型の剥離性も良好にする事ができ
る。Fourthly, almost all surfaces except the light emitting surface are matte-finished, so that the mold releasability can be improved.

【００１４】第５に、光の出入り口である樹脂封止体の
側面に、同一材料または別の材料のレンズを設けること
で、光の強度が強く、また絞り込んだ光を提供すること
ができる。Fifth, by providing a lens of the same material or another material on the side surface of the resin sealing body, which is a light entrance / exit port, it is possible to provide a high light intensity and a narrowed light.

【００１５】第６に、光半導体装置を水平に基板に実装
し、樹脂封止体の側面より入射される光が前記基板に対
して実質平行になるようにする事で、従来必要である電
気的配線が不要となる。例えばコンピューターの中に装
着されるプリント基板の周辺にこの光半導体装置を装着
し、また別のプリント基板に、発光する光半導体装置を
水平に基板に実装し、樹脂封止体の側面より発光した光
が前記基板に対して実質平行になるようにすれば、水平
に配置された複数枚のプリント基板間の信号のやりとり
を光で実現できる。従ってプリント基板間の電気的配線
が全く不要となる。Sixth, by mounting the optical semiconductor device horizontally on a substrate so that light incident from the side surface of the resin sealing body is substantially parallel to the substrate, electric power conventionally required is obtained. No special wiring is required. For example, this optical semiconductor device is mounted around a printed circuit board mounted in a computer, and another light emitting optical device is mounted horizontally on another printed circuit board, and light is emitted from the side surface of the resin sealing body. If the light is made substantially parallel to the substrate, light can be transmitted and received between a plurality of printed boards arranged horizontally. Therefore, no electrical wiring between the printed boards is required.

【００１６】更には、前記基板をＩＣカードに組み込む
と、カードの薄い側面から光の交信が可能となり、ＩＣ
カードとのデータのやりとりを行う機器との接続が全く
不要となる。Further, when the substrate is incorporated in an IC card, light can be communicated from a thin side of the card.
There is no need to connect to a device that exchanges data with the card.

【００１７】例えば、コンピューターに挿入されるＩＣ
カードは、電気的接続や位置規制のために、メカ的機構
が必要となる。例えばフロッピーディスクを挿入する
際、押し込むとメカ機構が働くが、本装置では、光で信
号が伝わるため、このような機構が全くいらない。For example, an IC inserted into a computer
The card requires a mechanical mechanism for electrical connection and position regulation. For example, when a floppy disk is inserted, when it is pushed in, a mechanical mechanism works. However, in this apparatus, since a signal is transmitted by light, such a mechanism is not required at all.

【００１８】[0018]

【発明の実施の形態】まず本発明を説明する前に、図２
を参照して、光の曲折機構を説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing the present invention, FIG.
The light bending mechanism will be described with reference to FIG.

【００１９】図は理解のために、三つの図を一体にした
もので、左上が光半導体装置の平面図、左下が前記平面
図のＡ−Ａ線に於ける断面図、右上が前記平面図を右側
より見た側面図である。For the sake of comprehension, the figures are made by integrating the three figures, wherein the upper left is a plan view of the optical semiconductor device, the lower left is a cross-sectional view taken along line AA of the plan view, and the upper right is the plan view. It is the side view which looked at from the right side.

【００２０】まずリードフレームがある。このリードフ
レームは、２点鎖線で示すアイランド２１とリード２２
により構成され、ここではＣｕより成り、この上に発光
部となる一点鎖線で示す半導体チップ２３、受光部とな
る一点鎖線で示す半導体チップ２４が半田等の固着手段
を介して固定されている。First, there is a lead frame. This lead frame includes an island 21 and a lead 22 indicated by a two-dot chain line.
Here, a semiconductor chip 23 indicated by an alternate long and short dash line serving as a light emitting portion and a semiconductor chip 24 indicated by an alternate long and short dash line serving as a light receiving portion are fixed via Cu or other fixing means.

【００２１】また半導体チップ２３は、例えば赤外ＬＥ
Ｄ、レーザ等の発光素子であり、駆動回路が一体になっ
ていても良い。また半導体チップ２４は、フォトセンサ
であり、ＰＩＮダイオード等であり、やはりフォトセン
サの駆動回路が一体のものでよい。更には、発光素子の
駆動回路も含まれて良い。これらの半導体チップの周囲
には、ボンディングパッドが形成され、金属細線と電気
的に接続されたリード２２がチップの周囲から外部へ延
在されている。ここで封止材としては光に対して透明で
有ればよく、材料は特に選ばない。例えば赤外線を使う
場合は、赤外線が透過する樹脂を採用すればよい。The semiconductor chip 23 is, for example, an infrared LE.
D, a light emitting element such as a laser, and a driving circuit may be integrated. Further, the semiconductor chip 24 is a photo sensor, such as a PIN diode, and the driving circuit of the photo sensor may also be integrated. Further, a driving circuit of a light emitting element may be included. Bonding pads are formed around these semiconductor chips, and leads 22 electrically connected to the fine metal wires extend from the periphery of the chips to the outside. Here, the sealing material only needs to be transparent to light, and the material is not particularly limited. For example, when using infrared light, a resin that transmits infrared light may be used.

【００２２】そしてリードの先端および半導体チップ
は、光に対して透明な封止体２５で封止されている。そ
してこの封止体２５には、反射面２６を持つ溝２７が設
けられている。The tips of the leads and the semiconductor chip are sealed with a sealing body 25 transparent to light. The sealing body 25 has a groove 27 having a reflection surface 26.

【００２３】ポイントはは、前記反射面２６にあり、こ
の反射面は封止体２５に溝を形成することで構成され、
これにより点線矢印で示すように封止体２５の側面Ｅか
ら光の射出、側面Ｅへの入射が可能となる。The point is on the reflection surface 26, which is formed by forming a groove in the sealing body 25.
As a result, light can be emitted from the side surface E of the sealing body 25 and can be incident on the side surface E as indicated by the dotted arrow.

【００２４】一般には、発光部や受光部を構成する半導
体チップは、この上に、プリズムやレンズを構成して半
導体装置となるため、これを使用したモジュールやセッ
トは、セット自身の厚みが厚くなり、しかもこの上や周
辺に光学機器が配置されるため、薄型・小型が難しかっ
た。しかし溝の一部分である反射面２６により、封止体
の側面Ｅで光の出し入れが可能となるため、プリズムは
不要であるし、レンズが必要で有れば、この側面Ｅに形
成できる。つまり透明封止体の側面に凸状のレンズＬを
一体成型することも可能であるし、ここに別途レンズを
取り付けても良い。従って装置自身の厚みを薄くするこ
とができる。前記リードフレームはＣｕより成り、厚さ
は、約０．１２５ｍｍで、半導体チップの厚みは、例え
ば２５０〜３００μｍ程度である。また封止体２５は、
透明なエポキシ材料で、例えばトランスファーモールド
により成され、全体の厚みは、約１ｍｍ〜１．５ｍｍで
ある。当然チップの厚みが薄くなれば、更に薄くできる
事は言うまでもない。また金型にも溝を形成する部分が
設けられており、透明の樹脂封止体で半導体チップをト
ランスファーモールドした際に、溝が同時に形成され
る。In general, a semiconductor chip constituting a light emitting section and a light receiving section constitutes a semiconductor device by forming a prism and a lens thereon, so that a module or a set using the same has a large thickness. In addition, since optical devices are arranged on and around this, it has been difficult to reduce the thickness and size. However, since the reflecting surface 26 which is a part of the groove allows light to enter and exit from the side surface E of the sealing body, no prism is required. If a lens is required, a lens can be formed on the side surface E. That is, the convex lens L can be integrally molded on the side surface of the transparent sealing body, or a lens may be separately attached here. Therefore, the thickness of the device itself can be reduced. The lead frame is made of Cu, the thickness is about 0.125 mm, and the thickness of the semiconductor chip is, for example, about 250 to 300 μm. The sealing body 25 is
It is made of a transparent epoxy material, for example, by transfer molding, and has a total thickness of about 1 mm to 1.5 mm. It goes without saying that if the thickness of the chip is reduced, it can be further reduced. The mold is also provided with a portion for forming a groove, and when the semiconductor chip is transfer-molded with a transparent resin sealing body, the groove is formed at the same time.

【００２５】ここで溝２７は、半導体チップを露出する
ことなく、反射面が構成されればよく、例えば厚みの半
分程度、ここでは７５０μｍ程度の深さを有し、少なく
とも反射面２６を構成する部分は４５°に成っている。
ここの反射面は、界面の両側の空気と透明樹脂の屈折率
の違いにより、反射面となる。しかし全ての光が反射さ
れないので、鏡面仕上げされた金型で樹枝自身を鏡面状
にしても良いし、反射面に金属被膜を形成しても良い。
また側面から出入りする光の光路は、機器によっては水
平である必要がないので、そのときは反射面の角度は、
４５度以外に調整される。Here, the groove 27 may have a reflecting surface without exposing the semiconductor chip. For example, the groove 27 has a depth of about half the thickness, here about 750 μm, and constitutes at least the reflecting surface 26. The part is at 45 °.
The reflecting surface here becomes a reflecting surface due to the difference in the refractive index between the air on both sides of the interface and the transparent resin. However, since not all light is reflected, the tree itself may be mirror-finished using a mirror-finished mold, or a metal coating may be formed on the reflection surface.
Also, the optical path of light entering and exiting from the side does not need to be horizontal depending on the device, so the angle of the reflecting surface is
It is adjusted to other than 45 degrees.

【００２６】この被膜方法としては、半導体技術で使用
される蒸着、スパッタ成膜が考えられ、またその他に
は、メッキが考えられる。ここで注意を要する所は、封
止体２５に形成された被膜材料との短絡である。前者の
二つの被膜方法では、マスクを必要とする。また例えば
無電解メッキで、溶液の中に全体をディップする場合
は、導出する部分のリード２２その導出部周囲の封止体
２５の部分に樹脂を塗り、その後でメッキし、この樹脂
を取り除けばよい。またディップ以外では、この溶液を
溝の部分のみに滴下してメッキさせても良い。金属材料
としては、金、Ａｌ、ニッケル等が考えられる。As the coating method, vapor deposition and sputter deposition used in semiconductor technology can be considered, and in addition, plating can be considered. A point to be noted here is a short circuit with the coating material formed on the sealing body 25. The former two coating methods require a mask. When the whole is dipped in a solution by, for example, electroless plating, a resin is applied to the lead 22 of the lead-out part and the sealing body 25 around the lead-out part, and thereafter, plating is performed, and the resin is removed. Good. In addition to the dip, this solution may be dropped only on the groove to perform plating. As the metal material, gold, Al, nickel and the like can be considered.

【００２７】本実施例では、光の出し入れ（射出や入
射）が行われる側面Ｅを除いた側面Ｆ、Ｇ、Ｈにリード
を配置できる。しかし金属細線やリードによる反射を考
えると、側面Ｈが好ましい。平面図に於いて、受光部で
ある半導体チップは、実質右側に受光素子領域（第１の
領域）が形成され、左側にこれを駆動する駆動素子領域
（第２の領域）が形成される。つまり第２の半導体領域
は、光の経路とは成らないため、この領域をリードが導
出される領域、金属細線の領域として活用でき、光の反
射等によるノイズが第１の領域に浸入することを防止し
ている。また第１の領域が右側にずれているので、当然
溝２７も右側にずれ、溝から左側の領域は、ワイヤを延
在させる領域として確保できる。もし左側や中央に第１
の領域があれば、ワイヤは、溝から露出する可能性があ
る。In this embodiment, the leads can be arranged on the side surfaces F, G and H excluding the side surface E where the light enters and exits (emission and incidence). However, the side surface H is preferable in consideration of reflection by a thin metal wire or a lead. In the plan view, a semiconductor chip serving as a light receiving section has a light receiving element region (first region) substantially on the right side and a drive element region (second region) for driving the light receiving element region on the left side. That is, since the second semiconductor region does not serve as a light path, this region can be used as a region from which leads are led out and a thin metal wire region, and noise due to light reflection or the like enters the first region. Has been prevented. Since the first region is shifted to the right, the groove 27 is also shifted to the right, and the region on the left from the groove can be secured as a region for extending the wire. If the first on the left or center
If there is an area, the wire may be exposed from the groove.

【００２８】以上述べた光半導体装置を、例えばプリン
ト基板、セラミック基板、絶縁性金属基板、ＴＡＢ等の
樹脂フィルムに実装する場合、図２の左下断面図の如
く、水平に配置されるので、薄型のモジュールや機器が
形成可能である。例えば、このような素子を実装したプ
リント基板が水平方向に実装されていれば、複数のプリ
ント基板の信号のやりとりを光で実現でき、電気的配線
を無くすことが可能となる。たまＩＣカード等に実装す
れば、カード自身の厚みを薄く且つ側辺方向で光信号の
やりとりができる。従って、このＩＣカードをコンピュ
ーターに挿入する場合、メカ的機構を不要とすることが
できる。例えば、フロッピーディスクや電気的コンタク
トが必要なＩＣカードの場合、メカ的機構によりＩＣカ
ードを所定の位置に配置する必要があるが、光の射出可
能な距離の中では、いっさいこの機構は不要となる。ま
た机の上にＩＣカードを置くだけで、情報を受ける機器
に同様な受光・発光素子が配置されていれば、水平方向
での信号のやりとりが可能となる。When the optical semiconductor device described above is mounted on a resin film such as a printed circuit board, a ceramic substrate, an insulated metal substrate, or TAB, for example, as shown in the lower left sectional view of FIG. Modules and devices can be formed. For example, if a printed circuit board on which such elements are mounted is mounted horizontally, signals can be exchanged between a plurality of printed circuit boards using light, and electrical wiring can be eliminated. When mounted on an IC card or the like, the card itself can be made thinner and optical signals can be exchanged in the lateral direction. Therefore, when this IC card is inserted into a computer, a mechanical mechanism can be eliminated. For example, in the case of a floppy disk or an IC card that requires electrical contact, it is necessary to arrange the IC card at a predetermined position by a mechanical mechanism. However, this mechanism is unnecessary at all within a light emitting distance. Become. In addition, if a similar light receiving / light emitting element is arranged in a device that receives information simply by placing an IC card on a desk, signals can be exchanged in the horizontal direction.

【００２９】一方、アイランド２１は、２点鎖線で示す
ように二つで成っているが、一体で構成しても良い。ま
た樹脂封止体２５は、二つの半導体チップを一体でモー
ルドしているが、個別でも良い。On the other hand, the island 21 is composed of two islands as shown by a two-dot chain line, but may be constituted integrally. Further, the resin sealing body 25 is formed by integrally molding two semiconductor chips, but may be individually formed.

【００３０】なお実線で囲んだ最小の矩形は、光の照射
される、または光が射出される部分を示している。The smallest rectangle surrounded by a solid line indicates a portion where light is irradiated or light is emitted.

【００３１】一方、図３は、発光素子と受光素子を個別
部品として形成した場合の図面である。図番は、図２と
対応する所を同じ番号で付したので、ここでは説明を省
略する。FIG. 3 shows a case where the light emitting element and the light receiving element are formed as individual components. In the figure, the parts corresponding to those in FIG. 2 are denoted by the same reference numerals, and the description is omitted here.

【００３２】図１は、図２や図３のパッケージを梨地に
したもので、反射面を鏡面にしたものである。FIG. 1 shows a satin finish of the package shown in FIGS. 2 and 3 and a mirror surface of the reflection surface.

【００３３】例えば、特開平６０−７４４５７号公報
は、パッケージを梨地にする特許である。この出願の当
時は、金型自身が鏡面仕上げされていたため、半導体プ
ラスチックパッケージ自身が鏡面仕上げされていた。し
かし、以下の問題により梨地加工された。For example, Japanese Patent Application Laid-Open No. 60-74457 is a patent in which a package is matte. At the time of this application, since the mold itself was mirror-finished, the semiconductor plastic package itself was mirror-finished. However, satin finish was applied due to the following problems.

【００３４】ヒケやピンホールが目立ちやすい。The sink marks and pinholes are conspicuous.

【００３５】金型からの離型をする際、パッケージク
ラック、ペレットクラックが発生する。これらの問題の
ため、離型力を小さくする手段として梨地加工が施され
た。When the mold is released from the mold, package cracks and pellet cracks occur. Due to these problems, satin finish has been applied as a means of reducing the releasing force.

【００３６】従って、梨地加工されたもので反射面も構
成すると、この反射面２６で乱反射が発生する。Therefore, if the reflection surface is also formed of a satin finish, irregular reflection occurs on the reflection surface 26.

【００３７】従って、アイランド２１に載置されるチッ
プが発光素子である場合、側面Ｅから射出される光は、
その強度が弱くなる。また載置されるチップが受光素子
である場合、受光素子に入射される光りの強度が弱くな
る。Therefore, when the chip mounted on the island 21 is a light emitting element, the light emitted from the side E is
Its strength decreases. Further, when the chip to be mounted is a light receiving element, the intensity of light incident on the light receiving element becomes weak.

【００３８】本発明は、反射面２６の粗さを他の面の粗
さよりも小さくしたものである。特に表面粗さを約０．
５μｍ以下にすることで、その反射効率を大きく改善し
たものである。In the present invention, the roughness of the reflection surface 26 is made smaller than the roughness of the other surfaces. In particular, a surface roughness of about 0.
By setting it to 5 μm or less, the reflection efficiency is greatly improved.

【００３９】図では、溝２７を構成するもう一つの斜面
Ｓも鏡面としているが、反射面を構成しないので梨地加
工しても良い。また側面Ｅにレンズが封止成型時に一体
で構成される場合は、ここも鏡面加工して有る方が良
い。一方、梨地加工されている部分は、光半導体装置の
外部から入ってくる光の樹脂内浸入を防止することがで
きる。In the figure, the other inclined surface S forming the groove 27 is also a mirror surface, but it may be satin-finished because it does not form a reflecting surface. When a lens is integrally formed on the side surface E at the time of sealing and molding, it is preferable that the surface is also mirror-finished. On the other hand, the portion subjected to the satin finish can prevent light entering from outside the optical semiconductor device from entering the resin.

【００４０】更には、レンズＬが省略され、側面を平坦
にした場合でも、ここの側面は、光が入ったり、射出さ
れたりする領域であり、ここも鏡面とする必要がある。Further, even when the lens L is omitted and the side surface is flat, the side surface is a region where light enters and exits, and it is necessary that this surface is also a mirror surface.

【００４１】この梨地加工は、樹脂封止体を成型する上
金型と下金型とで形成されるキャビティ全面に、放電加
工で施される。そして前述した鏡面加工する部分、特に
反射面は、この後、手作業により鏡面加工される。また
必要により、梨地加工の部分は、硬質クロムメッキがさ
れたり、フッ化炭素ポリマ複合化処理が施される。This satin finish is performed by electric discharge machining on the entire surface of the cavity formed by the upper mold and the lower mold for molding the resin sealing body. Then, the above-described mirror-finished portion, particularly the reflection surface, is manually mirror-finished thereafter. If necessary, the satin-finished portion is subjected to hard chrome plating or fluorocarbon polymer composite treatment.

【００４２】従って、この金型に、前記半導体チップが
装着されたリードフレームを装着し、所定の光に対して
透明な樹脂を封止する事で、表面に梨地加工が施され、
反射面が鏡面状になった封止体を実現することができ
る。Therefore, a lead frame on which the semiconductor chip is mounted is mounted on this mold, and a resin that is transparent to predetermined light is sealed, so that the surface is matted,
It is possible to realize a sealed body having a mirror-like reflecting surface.

【００４３】[0043]

【発明の効果】本発明によれば、 第１に、樹脂封止体
の側面より入射された前記光が前記受光面に入射するよ
うに反射面を設け、この反射面を、実質鏡面仕上げする
ことで、側面に入射した光を効率よく受光面に入射させ
ることができる。つまり、樹脂から成る封止体の側面か
ら受光面に向かう光は、樹脂の光路内、梨地の反射面で
減衰し、受光面に到達する光が減衰するが、反射面が実
質鏡面となっているため、この減衰を抑制でき、受光面
を持ったチップ、例えばホトダイオードの検出精度を高
めることができる。According to the present invention, first, a reflecting surface is provided so that the light incident from the side surface of the resin sealing body is incident on the light receiving surface, and the reflecting surface is substantially mirror-finished. This allows light incident on the side surface to be efficiently incident on the light receiving surface. In other words, light traveling from the side surface of the sealing body made of resin to the light receiving surface is attenuated in the optical path of the resin and on the matte reflective surface, and light reaching the light receiving surface is attenuated, but the reflective surface is substantially a mirror surface. Therefore, this attenuation can be suppressed, and the detection accuracy of a chip having a light receiving surface, for example, a photodiode can be increased.

【００４４】第２に、発光面より発光された前記光が前
記樹脂封止体の側面から発光するように反射面を設け、
反射面を、実質鏡面仕上げすることで、発光面から発光
される光を効率よく反射させ、前記側面から射出する事
ができる。Second, a reflecting surface is provided so that the light emitted from the light emitting surface is emitted from the side surface of the resin sealing body.
When the reflecting surface is substantially mirror-finished, light emitted from the light emitting surface can be efficiently reflected and emitted from the side surface.

【００４５】第１の効果と同様に、発光された光は反射
面で減衰するが、反射面が実質鏡面仕上げされているの
で、前記側面から射出光は、その強度の減衰を抑制で
き、この光を外部で受ける検出素子（フォトダイオー
ド）の精度を向上させることができる。Similarly to the first effect, the emitted light is attenuated on the reflection surface, but since the reflection surface is substantially mirror-finished, the intensity of the light emitted from the side surface can be suppressed from attenuating. The accuracy of a detection element (photodiode) that receives light externally can be improved.

【００４６】第３に、完全に鏡面研磨する事はなく、発
光面を、およそ０．５μｍ以下の表面粗度にする事で、
光りの減衰を抑制させることができる。Thirdly, the mirror surface is not completely polished, and the light emitting surface is made to have a surface roughness of about 0.5 μm or less.
Light attenuation can be suppressed.

【００４７】第４に、発光面を除いたほぼ全表面を梨地
仕上げすることで、金型の剥離性も良好にする事ができ
る。しかも反射面以外の側面から入射する外来光は、梨
地仕上げされているため、その表面で乱反射され、受光
素子の誤検出を抑制できる。Fourth, almost all surfaces except the light emitting surface are matte-finished, so that the mold releasability can be improved. Moreover, since the extraneous light that enters from the side surface other than the reflection surface is matte-finished, it is irregularly reflected on the surface, and erroneous detection of the light receiving element can be suppressed.

【００４８】第５に、光の出入り口である樹脂封止体の
側面に、同一材料または別の材料のレンズを設けること
で、封止材の光路内で多少減衰しても、光をまとめられ
るので光の強度の減衰を抑えることができる。しかも、
絞り込んだ光を提供することができる。Fifth, by providing a lens of the same material or another material on the side surface of the resin sealing body which is a light entrance / exit, light can be collected even if it is slightly attenuated in the optical path of the sealing material. Therefore, attenuation of light intensity can be suppressed. Moreover,
A narrowed light can be provided.

【００４９】第６に、光半導体装置を水平に基板に実装
し、樹脂封止体の側面より入射される光が前記基板に対
して実質平行になるようにする事で、従来必要である電
気的配線が不要となる。例えばコンピューターの中に装
着されるプリント基板の周辺にこの光半導体装置を装着
し、また別のプリント基板に、発光する光半導体装置を
水平に基板に実装し、樹脂封止体の側面より発光した光
が前記基板に対して実質平行になるようにすれば、水平
に配置された複数枚のプリント基板間の信号のやりとり
を光で実現できる。従ってプリント基板間の電気的配線
が全く不要となる。Sixth, by mounting the optical semiconductor device horizontally on a substrate so that light incident from the side surface of the resin sealing body is substantially parallel to the substrate, electric power conventionally required is obtained. No special wiring is required. For example, this optical semiconductor device is mounted around a printed circuit board mounted in a computer, and another light emitting optical device is mounted horizontally on another printed circuit board, and light is emitted from the side surface of the resin sealing body. If the light is made substantially parallel to the substrate, light can be transmitted and received between a plurality of printed boards arranged horizontally. Therefore, no electrical wiring between the printed boards is required.

【００５０】更には、前記基板をＩＣカードに組み込む
と、カードの薄い側面から光の交信が可能となり、ＩＣ
カードとのデータのやりとりを行う機器との接続が全く
不要となる。Further, when the substrate is incorporated into an IC card, light can be communicated from a thin side of the card.
There is no need to connect to a device that exchanges data with the card.

【００５１】例えば、コンピューターに挿入されるＩＣ
カードは、電気的接続や位置規制のために、メカ的機構
が必要となる。例えばフロッピーディスクを挿入する
際、押し込むとメカ機構が働くが、本装置では、光で信
号が伝わるため、このような機構が全くいらない。For example, an IC inserted into a computer
The card requires a mechanical mechanism for electrical connection and position regulation. For example, when a floppy disk is inserted, when it is pushed in, a mechanical mechanism works. However, in this apparatus, since a signal is transmitted by light, such a mechanism is not required at all.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施の形態である光半導体装置の説明
図である。FIG. 1 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

【図２】本発明の実施の形態である光半導体装置の説明
図である。FIG. 2 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

【図３】本発明の実施の形態である光半導体装置の説明
図である。FIG. 3 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

【図４】従来の光半導体装置と光学機器を組んだ概略図
である。FIG. 4 is a schematic view of a conventional optical semiconductor device and an optical device assembled.

【図５】従来の光半導体装置と光学機器を組んだ概略図
である。FIG. 5 is a schematic view of a conventional optical semiconductor device and an optical device assembled.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井野口 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 石川 勉 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 新井 政至 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 小堀 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 瀬山 浩樹 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 Ｆターム(参考） 5F041 AA06 AA31 CB32 DA17 DA44 DA57 EE17 FF16 5F088 AA03 BA01 BA20 BB10 EA09 HA09 JA06 LA01  ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Hiroshi Inoguchi 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Tsutomu Ishikawa 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Masatoshi Arai 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Prefecture Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori, Keihanhondori, Moriguchi-shi, Osaka 2-5-5 Sanyo Electric Co., Ltd. (72) Inventor Hiroki Seyama 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F041 AA06 AA31 CB32 DA17 DA44 DA57 EE17 FF16 5F088 AA03 BA01 BA20 BB10 EA09 HA09 JA06 LA01

Claims (9)

【特許請求の範囲】[Claims] 【請求項１】 上面を受光面とする半導体チップと、前
記半導体チップを封止し、所定の光を透過する樹脂封止
体と、 前記樹脂封止体の側面より入射された前記光が前記受光
面に入射するように設けられた反射面とを有し、 前記反射面は、実質鏡面仕上げされている事を特徴とし
た光半導体装置。1. A semiconductor chip having an upper surface as a light receiving surface, a resin sealing member for sealing the semiconductor chip and transmitting predetermined light, and the light incident from a side surface of the resin sealing member is An optical semiconductor device, comprising: a reflection surface provided so as to be incident on a light receiving surface, wherein the reflection surface is substantially mirror-finished. 【請求項２】 上面を発光面とする半導体チップと、前
記半導体チップを封止し、所定の光を透過する樹脂封止
体と、 前記発光面より発光された前記光が前記樹脂封止体の側
面から発光するように設けられた反射面とを有し、 前記反射面は、実質鏡面仕上げされている事を特徴とし
た光半導体装置。2. A semiconductor chip having an upper surface as a light emitting surface, a resin sealing member for sealing the semiconductor chip and transmitting predetermined light, and the light emitted from the light emitting surface being a resin sealing member. And a reflecting surface provided to emit light from the side surface of the optical semiconductor device, wherein the reflecting surface is substantially mirror-finished. 【請求項３】 前記発光面は、０．５μｍ以下の表面粗
度を有する請求項１または請求項２記載の光半導体装
置。3. The optical semiconductor device according to claim 1, wherein said light emitting surface has a surface roughness of 0.5 μm or less. 【請求項４】 前記発光面を除いたほぼ全表面が梨地仕
上げされている事を特徴とする光半導体装置。4. An optical semiconductor device characterized in that almost the entire surface except for the light emitting surface is matte finished. 【請求項５】 前記光の出入り口である前記樹脂封止体
の側面には、レンズが同一材料または別の材料で一体で
取り付けられる請求項１または請求項２記載の光半導体
装置。5. The optical semiconductor device according to claim 1, wherein a lens is integrally attached to a side surface of the resin sealing body, which is the light entrance / exit port, using the same material or another material. 【請求項６】 上面を受光の面とする半導体チップを封
止し、所定の光を透過する樹脂封止体と、前記樹脂封止
体の側面より入射された前記光が前記半導体チップの面
に入射するように設けられた鏡面仕上げされた反射面と
を有した光半導体装置が水平に基板に実装され、樹脂封
止体の側面より入射される光が前記基板に対して実質平
行になることを特徴とした光半導体モジュール。6. A resin sealing body for sealing a semiconductor chip having an upper surface as a light receiving surface and transmitting predetermined light, and the light incident from a side surface of the resin sealing body is provided on a surface of the semiconductor chip. An optical semiconductor device having a mirror-finished reflective surface provided to be incident on a substrate is horizontally mounted on a substrate, and light incident from a side surface of the resin sealing body is substantially parallel to the substrate. An optical semiconductor module, characterized in that: 【請求項７】 上面を発光の面とする半導体チップを封
止し、所定の光を透過する樹脂封止体と、前記前記半導
体チップの面から発光された前記光が前記樹脂封止体の
側面から発光するように設けられた鏡面仕上げされた反
射面とを有した光半導体装置が水平に基板に実装され、
樹脂封止体の側面より発光した光が前記基板に対して実
質平行になることを特徴とした光半導体モジュール。7. A resin sealing body that seals a semiconductor chip having an upper surface as a light emitting surface and transmits predetermined light, and wherein the light emitted from the surface of the semiconductor chip is formed of the resin sealing body. An optical semiconductor device having a mirror-finished reflective surface provided to emit light from the side surface is horizontally mounted on the substrate,
An optical semiconductor module, wherein light emitted from a side surface of a resin sealing body is substantially parallel to the substrate. 【請求項８】 前記基板はＩＣカードに組み込まれ、カ
ードの薄い側面から光の交信を行うように構成された光
半導体モジュール。8. An optical semiconductor module in which the substrate is incorporated in an IC card and configured to communicate light from a thin side of the card. 【請求項９】 上面を受光面とする半導体チップと、前
記半導体チップを封止し、所定の光を透過する樹脂封止
体と、 前記樹脂封止体の側面より入射された前記光が前記受光
面に入射するように設けられた反射面とを有し、 前記反射面の粗さは、他の面の粗さよりも小さいことを
特徴とした光半導体装置。9. A semiconductor chip having an upper surface as a light receiving surface, a resin sealing member for sealing the semiconductor chip and transmitting predetermined light, and the light incident from a side surface of the resin sealing member is provided. A reflecting surface provided so as to be incident on a light receiving surface, wherein the roughness of the reflecting surface is smaller than the roughness of other surfaces.
JP10245245A 1998-08-31 1998-08-31 Optical semiconductor device and module thereof Pending JP2000077689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10245245A JP2000077689A (en) 1998-08-31 1998-08-31 Optical semiconductor device and module thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10245245A JP2000077689A (en) 1998-08-31 1998-08-31 Optical semiconductor device and module thereof

Publications (1)

Publication Number Publication Date
JP2000077689A true JP2000077689A (en) 2000-03-14

Family

ID=17130827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10245245A Pending JP2000077689A (en) 1998-08-31 1998-08-31 Optical semiconductor device and module thereof

Country Status (1)

Country Link
JP (1) JP2000077689A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6948836B2 (en) 2002-04-23 2005-09-27 Koito Manufacturing Co., Ltd. Light source unit having orthogonally disposed semiconductor light emitter
US7097334B2 (en) 2002-04-23 2006-08-29 Koito Manufacturing Co., Ltd. Light source unit for vehicular lamp
JP2011097011A (en) * 2009-09-11 2011-05-12 Rohm Co Ltd Light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6948836B2 (en) 2002-04-23 2005-09-27 Koito Manufacturing Co., Ltd. Light source unit having orthogonally disposed semiconductor light emitter
US7097334B2 (en) 2002-04-23 2006-08-29 Koito Manufacturing Co., Ltd. Light source unit for vehicular lamp
EP2192344A2 (en) 2002-04-23 2010-06-02 Koito Manufacturing Co., Ltd. Vehicular lamp with light source units
JP2011097011A (en) * 2009-09-11 2011-05-12 Rohm Co Ltd Light emitting device

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