JP2000077191A - Display device - Google Patents
Display deviceInfo
- Publication number
- JP2000077191A JP2000077191A JP10245244A JP24524498A JP2000077191A JP 2000077191 A JP2000077191 A JP 2000077191A JP 10245244 A JP10245244 A JP 10245244A JP 24524498 A JP24524498 A JP 24524498A JP 2000077191 A JP2000077191 A JP 2000077191A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- light
- tft
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 7
- 239000011368 organic material Substances 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 64
- 239000000463 material Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- 239000003086 colorant Substances 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 2
- -1 3-methylphenylphenylamino Chemical group 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、基板上に、エレク
トロルミネッセンス(Electro Luminescence:以下、
「EL」と称する。)素子及び薄膜トランジスタ(Thin
Film Transistor:以下、「TFT」と称する。)を備
えた表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescence (hereinafter, referred to as "electroluminescence") on a substrate.
Called "EL". ) Elements and thin film transistors (Thin
Film Transistor: Hereinafter, referred to as “TFT”. ).
【0002】[0002]
【従来の技術】近年、EL素子を用いた表示装置が、C
RTやLCDに代わる表示装置として注目されている。2. Description of the Related Art In recent years, display devices using EL elements have been
It is receiving attention as a display device that replaces RT and LCD.
【0003】図3に、従来のEL素子及びTFTを備え
たカラー表示装置の断面図を示す。FIG. 3 is a sectional view of a conventional color display device provided with an EL element and a TFT.
【0004】同図に示す如く、ガラスや合成樹脂などか
ら成る絶縁性基板2上に、ゲート電極3、ゲート絶縁膜
4、ソース領域6及びドレイン領域7を備えた能動層
5、層間絶縁膜8、ソース領域6及びドレイン領域7に
それぞれ接続されたソース電極9及びドレイン電極1
0、平坦化絶縁膜11を順次形成してなるTFTを形成
する。このTFTは、そのソース電極9が有機EL素子
のITO(Indium Tin Oxide)からなる陽極12に接続
されており、有機EL素子のスイッチング素子として機
能する。As shown in FIG. 1, an active layer 5 having a gate electrode 3, a gate insulating film 4, a source region 6 and a drain region 7 and an interlayer insulating film 8 are formed on an insulating substrate 2 made of glass or synthetic resin. , Source electrode 9 and drain electrode 1 connected to source region 6 and drain region 7, respectively.
0, a TFT is formed by sequentially forming the planarization insulating film 11. The TFT has a source electrode 9 connected to an anode 12 made of ITO (Indium Tin Oxide) of an organic EL element, and functions as a switching element of the organic EL element.
【0005】このTFTの上に有機EL素子を形成す
る。An organic EL element is formed on the TFT.
【0006】有機EL素子は、TFTのソース電極に接
続されたITO等の透明導電材料から成る陽極12、M
TDATA(4,4’-bis( 3-methylphenylphenylamino)b
iphenyl)から成る第2ホール輸送層16、TPD(4,
4’,4”-tris(3-methylphenylphenylamino)triphenylan
ine)からなる第1ホール輸送層15、発光層14、B
ebq2から成る電子輸送層13、マグネシウム・イン
ジウム合金(MgIn)から成る陰極17がこの順番で
積層形成されている。このように、各層13,14,1
5,16は有機化合物から成り、その各層と陽極12及
び陰極17とによって有機EL素子が構成されている。The organic EL element includes an anode 12, a transparent conductive material such as ITO connected to a source electrode of a TFT.
TDATA (4,4'-bis (3-methylphenylphenylamino) b
iphenyl), the second hole transport layer 16, TPD (4,
4 ', 4 ”-tris (3-methylphenylphenylamino) triphenylan
ine), the first hole transport layer 15, the light emitting layer 14, B
An electron transport layer 13 made of ebq2 and a cathode 17 made of magnesium-indium alloy (MgIn) are stacked in this order. Thus, each layer 13, 14, 1
Reference numerals 5 and 16 each include an organic compound, and the respective layers and the anode 12 and the cathode 17 constitute an organic EL element.
【0007】その有機EL素子は、陽極12から注入さ
れたホールと、陰極17から注入された電子とが発光層
14の内部で再結合し、発光層14を形成する有機分子
を励起して励起子が生じる。この励起子が放射失活する
過程で発光層14から光が放たれ、この光が透明な陽極
12から透明絶縁基板2を介して外部へ出射される(図
中、矢印方向)。In the organic EL device, the holes injected from the anode 12 and the electrons injected from the cathode 17 are recombined inside the light emitting layer 14 to excite the organic molecules forming the light emitting layer 14 to be excited. A child arises. Light is emitted from the light emitting layer 14 in the process of radiation deactivation of the excitons, and the light is emitted from the transparent anode 12 to the outside through the transparent insulating substrate 2 (in the direction of the arrow in the figure).
【0008】[0008]
【発明が解決しようとする課題】ところで、上述の従来
の表示装置の構造では、有機EL素子からの光放出の方
向がTFTを設けた絶縁性基板2側であるため、放出さ
れる光がTFTによって遮断されてしまい表示画素の開
口率が低下してしまうという欠点があった。In the structure of the conventional display device described above, light is emitted from the organic EL element on the side of the insulating substrate 2 on which the TFT is provided. And the aperture ratio of the display pixels is reduced.
【0009】また従来の構造であると、発光光を遮断し
ない程度にTFTを極力小さくしなければならないとい
う制約があるため、TFTのサイズ及びTFTの能力に
も制限があった。Further, in the conventional structure, there is a restriction that the TFT must be made as small as possible so as not to block the emitted light, so that the size of the TFT and the capability of the TFT are also limited.
【0010】そこで本発明は、上記の従来の欠点に鑑み
て為されたものであり、表示画素の開口率を向上させる
とともに、EL素子を駆動するTFTのサイズや駆動能
力の決定に自由度の増大が図れる表示装置を提供するこ
とを目的とする。In view of the above, the present invention has been made in view of the above-mentioned drawbacks, and has an advantage that the aperture ratio of a display pixel can be improved and the size and the driving ability of a TFT for driving an EL element can be freely determined. It is an object to provide a display device which can be increased.
【0011】[0011]
【課題を解決するための手段】本発明の表示装置は、基
板上に、ソース及びドレインを備えた薄膜トランジスタ
と、該薄膜トランジスタの上層に、該薄膜トランジスタ
のソース又はドレインに接続され不透明導電材料からな
る陽極、発光素子層、及び透明導電材料からなる陰極を
順に積層して成り前記薄膜トランジスタによって駆動さ
れるエレクトロルミネッセンス素子と、を備えているも
のである。According to the present invention, there is provided a display device comprising: a thin film transistor having a source and a drain on a substrate; and an anode made of an opaque conductive material connected to the source or the drain of the thin film transistor on the thin film transistor. , A light-emitting element layer, and a cathode made of a transparent conductive material, which are sequentially laminated, and an electroluminescence element driven by the thin film transistor.
【0012】また、前記エレクトロルミネッセンス素子
の前記陰極側に色要素を備えた透明基板を配置し、該透
明基板上の色要素はカラーフィルタ層又は蛍光変換層で
ある。Further, a transparent substrate having a color element is disposed on the cathode side of the electroluminescent element, and the color element on the transparent substrate is a color filter layer or a fluorescence conversion layer.
【0013】[0013]
【発明の実施の形態】<第1の実施の形態>本発明の表
示装置について以下に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment A display device according to the present invention will be described below.
【0014】図1は第1の実施の形態であり色要素とし
てカラーフィルタを備えた表示装置の断面図である。FIG. 1 is a sectional view of a display device having a color filter as a color element according to a first embodiment.
【0015】各表示画素1は、ガラスや合成樹脂などか
ら成る絶縁基板、又は絶縁性薄膜であるSiN膜、Si
O2膜等を堆積して表面が絶縁性を有する導電性基板あ
るいは半導体基板等の絶縁性基板2上に、TFT及び有
機EL素子を積層形成して成っており、各表示画素がマ
トリクス状に配置されてカラー表示パネルを形成する。
絶縁性基板2は透明でも不透明でも良い。TFTは、図
1に示すように、ゲート電極3をゲート絶縁膜4の下に
設けたいわゆるボトムゲート型のTFTであり、能動層
として多結晶シリコン膜を用いた従来の構造と同様であ
るので説明を省略する。Each display pixel 1 is made of an insulating substrate made of glass, synthetic resin, or the like, a SiN film as an insulating thin film,
A TFT and an organic EL element are laminated on an insulating substrate 2 such as a conductive substrate or a semiconductor substrate having an insulating surface by depositing an O 2 film or the like, and each display pixel is formed in a matrix. Arranged to form a color display panel.
The insulating substrate 2 may be transparent or opaque. As shown in FIG. 1, the TFT is a so-called bottom gate type TFT in which a gate electrode 3 is provided below a gate insulating film 4, and has the same structure as a conventional structure using a polycrystalline silicon film as an active layer. Description is omitted.
【0016】TFTのソース電極9は有機EL素子の陽
極12に接続されている。The source electrode 9 of the TFT is connected to the anode 12 of the organic EL device.
【0017】その陽極12は、平坦化絶縁膜11及びこ
の平坦化絶縁膜11に設けたコンタクトホールを含む面
に形成した不透明導電材料であるモリブデン(Mo)1
2’より成っており、その上にITOを堆積する。Mo
とITOとは同形状でよい。Moは、発光層で発生した
光を反射し、効率よく光を放出するために設けられる。
不透明導電材料は、Moに限定されることなく、アルミ
ニウム(Al)、銀(Ag)等の金属でもよい。また、
その上にITOを設けたのは、仕事関数が高くMoと発
光素子層の発光を効率よく行うためである。The anode 12 is made of molybdenum (Mo) 1 which is an opaque conductive material formed on the surface including the planarizing insulating film 11 and the contact holes provided in the planarizing insulating film 11.
2 ', on which ITO is deposited. Mo
And ITO may have the same shape. Mo is provided to reflect light generated in the light emitting layer and efficiently emit light.
The opaque conductive material is not limited to Mo but may be a metal such as aluminum (Al) or silver (Ag). Also,
The reason why the ITO is provided thereon is that the work function is high and Mo and the light emitting element layer emit light efficiently.
【0018】有機EL素子は、ソース電極9に接続され
た陽極12とITO等の透明導電膜から成る陰極17と
の間に、Bebq2から成る電子輸送層13、発光層1
4、TPD(4,4’,4”-tris(3-methylphenylphenylami
no)triphenylanine)からなる第1ホール輸送層15、
MTDATA(4,4’-bis(3-methylphenylphenylamino)
biphenyl)から成る第2ホール輸送層16、リチウム、
ナトリウム等のアルカリ金属、カリウム、カルシウム、
マグネシウム等のアルカリ土類金属、又はこれら金属の
フッ素化合物等の仕事関数の高い材料からなるバッファ
層25からなる発光素子層がこの順番で積層形成されて
成る。In the organic EL device, an electron transport layer 13 made of Bebq2 and a light emitting layer 1 are provided between an anode 12 connected to a source electrode 9 and a cathode 17 made of a transparent conductive film such as ITO.
4, TPD (4,4 ', 4 "-tris (3-methylphenylphenylamido
no) triphenylanine) first hole transport layer 15,
MTDATA (4,4'-bis (3-methylphenylphenylamino)
biphenyl), a second hole transport layer 16 composed of lithium,
Alkali metals such as sodium, potassium, calcium,
A light emitting element layer composed of a buffer layer 25 made of a material having a high work function, such as an alkaline earth metal such as magnesium or a fluorine compound of such a metal, is laminated and formed in this order.
【0019】有機EL素子から発光される光は透明な陰
極17から外部(図中、紙面上方向)へ出射される。即
ち、TFTの存在しない側に発光する。なお、陰極17
は共通電極であり、また発光層14、電子輸送層13、
各ホール輸送層15,16、バッファ層25は絶縁膜1
8にて隣接する各表示画素1間で絶縁されている。Light emitted from the organic EL element is emitted from the transparent cathode 17 to the outside (upward on the paper in the figure). That is, light is emitted on the side where no TFT exists. The cathode 17
Is a common electrode, and the light emitting layer 14, the electron transport layer 13,
Each of the hole transport layers 15 and 16 and the buffer layer 25 are formed of the insulating film 1.
At 8, each display pixel 1 adjacent to each other is insulated.
【0020】この有機EL表示装置の表示パネルに色要
素としてカラーフィルタ22を設ける。A color filter 22 is provided as a color element on the display panel of the organic EL display device.
【0021】図1に示すように、陰極17側に、透明フ
ィルム又はガラス基板等の透明絶縁基板21上に赤
(R)、緑(G)、青(B)を備えたカラーフィルタ2
2を設ける。As shown in FIG. 1, a color filter 2 provided with red (R), green (G), and blue (B) on a transparent insulating substrate 21 such as a transparent film or a glass substrate on the cathode 17 side.
2 is provided.
【0022】このカラーフィルタ22は、有機EL素子
の陰極17側にその周辺を接着機能を有するシール剤に
て接着して固定する。なお、カラーフィルタ22は有機
EL素子とTFTからなる表示画素1に対応して各色が
設けられている。各色間には光を遮断するブラックマト
リックス(BM)23が備えられていても良い。The periphery of the color filter 22 is fixed to the cathode 17 side of the organic EL element by a sealing agent having an adhesive function. The color filter 22 is provided with each color corresponding to the display pixel 1 including the organic EL element and the TFT. A black matrix (BM) 23 that blocks light between the colors may be provided.
【0023】有機EL素子の発光層からの発光光は、カ
ラーフィルタ22を通ってそれぞれの色を図の矢印の方
向に出射する。Light emitted from the light emitting layer of the organic EL element passes through the color filter 22 and emits each color in the direction of the arrow in the figure.
【0024】ここで、有機EL素子の発光層の発光材料
について説明する。Here, the light emitting material of the light emitting layer of the organic EL device will be described.
【0025】有機EL素子の発光層14の発光材料は、
有機EL素子上に設けた色要素に応じて選択する。即
ち、本実施形態の場合のように、R,G,Bを備えたカ
ラーフィルタを用いる場合には、有機EL素子から発光
する光として白色光を用いる。The light emitting material of the light emitting layer 14 of the organic EL device is as follows.
The selection is made according to the color elements provided on the organic EL element. That is, when a color filter including R, G, and B is used as in the case of the present embodiment, white light is used as light emitted from the organic EL element.
【0026】白色光を発光させるためには、発光層14
の材料としては、ZnBTZ錯体を用いたり、あるいは
積層体のTPD(芳香族ジアミン)/p−EtTAZ
(1,2,4−トリアゾール誘導体)/Alq(ただ
し、「Alq」は赤色発光色素であるニールレッドで部
分的にドープすることを意味する。)を用いることによ
り実現できる。In order to emit white light, the light emitting layer 14
As a material of the above, a ZnBTZ complex is used, or TPD (aromatic diamine) / p-EtTAZ of a laminate is used.
It can be realized by using (1,2,4-triazole derivative) / Alq (however, “Alq” means doping partially with Neil Red which is a red light-emitting dye).
【0027】こうして、カラーフィルタ22を設けた基
板21側から光を放出することができるので、TFTに
よって光が遮断されることがないため表示画素の開口率
を最大限に設計することが可能となるとともに、EL素
子を駆動するTFTのサイズや駆動能力の決定に自由度
の増大が図れる。In this way, light can be emitted from the substrate 21 provided with the color filter 22, so that the light is not blocked by the TFT, and the aperture ratio of the display pixel can be designed to the maximum. At the same time, the degree of freedom in determining the size and driving ability of the TFT for driving the EL element can be increased.
【0028】また、表示画素の開口率を向上できるの
で、明るい表示を得るために電流密度を大きくする必要
もなくなり有機EL素子の寿命を長くすることができ
る。Further, since the aperture ratio of the display pixels can be improved, it is not necessary to increase the current density in order to obtain a bright display, and the life of the organic EL element can be extended.
【0029】また、有機EL素子の発光層として用いる
発光材料は本実施形態の場合には、白色発光材料を1種
類用いるだけでよく、また、透明基板21上にR,G,
Bの3色からなるカラーフィルタを配置してそのカラー
フィルタ形成面と有機EL素子の陰極側とを接着するだ
けであるから、従来の如く3原色を発光するために有機
EL素子層内に3種類の発光層の材料を形成していたの
に比べて非常に工程が簡略化できる。In the case of this embodiment, only one kind of white light-emitting material may be used as the light-emitting material used as the light-emitting layer of the organic EL element.
Since only the color filters of the three colors B are arranged and the surface on which the color filters are formed and the cathode side of the organic EL element are simply bonded, the organic EL element layer is formed in the organic EL element layer in order to emit three primary colors as in the prior art. The process can be greatly simplified as compared with the case where the material for the light emitting layer is formed.
【0030】更に、発光光が陰極側に設けたカラーフィ
ルタ側から表示画素の色として出射されるので従来の如
くTFT基板側から出射されるよりも色が発光される面
積が大きくなり明るく鮮明なカラー表示を得ることがで
きる。<第2の実施の形態>図2に、色要素として蛍光
変換層を用いた場合の表示装置の断面図を示す。Further, since the emitted light is emitted from the color filter provided on the cathode side as the color of the display pixel, the area in which the color is emitted is larger than in the conventional case, which is emitted from the TFT substrate. Color display can be obtained. <Second Embodiment> FIG. 2 is a cross-sectional view of a display device when a fluorescent conversion layer is used as a color element.
【0031】同図に示す如く、第1の実施形態と異なる
点は、透明基板21上にカラーフィルタ22に代えて蛍
光変換層24を形成した点、発光層14の材料が例えば
青色発光材料を用いた点である。As shown in the figure, the difference from the first embodiment is that a fluorescent conversion layer 24 is formed on a transparent substrate 21 instead of the color filter 22, and the material of the light emitting layer 14 is, for example, a blue light emitting material. This is the point used.
【0032】ガラス基板等の透明基板21上に蒸着法に
より有機材料を蒸着して蛍光変換層24を形成する。そ
してその透明基板21を陰極17上に貼り付ける。以下
に、蛍光変換層24として有機EL素子の発光層を青色
が発光される材料とした場合について説明する。An organic material is deposited on a transparent substrate 21 such as a glass substrate by a vapor deposition method to form a fluorescence conversion layer 24. Then, the transparent substrate 21 is attached on the cathode 17. Hereinafter, the case where the light emitting layer of the organic EL element is made of a material that emits blue light as the fluorescence conversion layer 24 will be described.
【0033】蛍光変換層24は、照射された着色光の色
を他の色に変換する機能を有している。従って、発光層
14に青色発光の材料を用いてカラー表示装置から3原
色のR,G,Bを得ようとする場合には、蛍光変換層2
4は、青色が赤色または緑色に変換される材料を用いて
形成しなければならない。The fluorescence conversion layer 24 has a function of converting the color of the irradiated colored light into another color. Therefore, when it is desired to obtain R, G, and B of three primary colors from a color display device using a blue light emitting material for the light emitting layer 14, the fluorescent conversion layer 2
4 must be formed using a material that converts blue into red or green.
【0034】有機EL素子の発光層14から発光した青
色光を赤色光に変換する場合には、その発光層を4−ジ
シアノメチレン−2−メチル−6−(p−ジメチルアミ
ノスチルリン)−4H−ピラン(DCM)等を用いて形
成する。そうすることにより、表示画素から赤色を出射
することができる。When converting blue light emitted from the light emitting layer 14 of the organic EL device to red light, the light emitting layer is formed of 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostillin) -4H. -Formed using pyran (DCM) or the like. By doing so, red light can be emitted from the display pixels.
【0035】次に、有機EL素子の発光層14から発光
した青色光を緑色光に変換する材料として、2,3,
5,6−1H,4H−テトラヒドロ−8−トリフロルメ
チルキノリジノ(9,9a,1−gh)クマリン等を用
いて形成する。表示画素から緑色を出射することができ
る。Next, as a material for converting blue light emitted from the light emitting layer 14 of the organic EL element into green light,
It is formed using 5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolizino (9,9a, 1-gh) coumarin or the like. Green can be emitted from the display pixel.
【0036】また、有機EL素子の発光層14から青色
光を放出する表示画素には、青色の色純度を高めるため
に青色変換層を設けても良い。その場合には例えば次の
青色発光材料を形成する。Further, the display pixel which emits blue light from the light emitting layer 14 of the organic EL element may be provided with a blue conversion layer in order to increase the color purity of blue. In that case, for example, the following blue light emitting material is formed.
【0037】また、青色発光材料としては、オキサジア
ゾール(OXD)、アゾメチン−亜鉛錯体(AZM)、
Al−キノリン混合配位子錯体+ペリレン等を用いる。The blue light-emitting materials include oxadiazole (OXD), azomethine-zinc complex (AZM),
An Al-quinoline mixed ligand complex + perylene or the like is used.
【0038】こうして有機EL素子の発光層として用い
る発光材料は、本実施の形態の場合には青色発光材料1
種類を用いるだけでよく、また、透明基板21上に3種
類の蛍光変換材料を1層形成するだけであるから、従来
の如く3原色を発光するために有機EL素子層内に3種
類の発光層の材料を形成していたのに比べて非常に工程
が簡略化できる。The light emitting material used as the light emitting layer of the organic EL element in this embodiment is the blue light emitting material 1
It is only necessary to use three types of luminescence conversion materials on the transparent substrate 21. Therefore, three types of light emission are provided in the organic EL element layer in order to emit three primary colors as in the prior art. The process can be greatly simplified as compared with the case where the material of the layer is formed.
【0039】なお、本実施の形態においては、発光層1
4から発光する光が青色の場合について説明したが、本
発明はそれに限定されるものではなく、発光層14から
の光は赤色でも緑色でも良い。その際、赤色の光を発光
する発光層とする場合には赤色を青色及び緑色に変換す
る材料から成る蛍光変換層を設け、緑色の光を発光する
発光層とする場合には緑色を赤色及び青色に変換する材
料から成る蛍光変換層を設ける。In the present embodiment, the light emitting layer 1
Although the case where the light emitted from 4 is blue has been described, the present invention is not limited to this, and the light from the light emitting layer 14 may be red or green. At that time, when a light emitting layer that emits red light is provided, a fluorescent conversion layer made of a material that converts red to blue and green is provided, and when a light emitting layer that emits green light is used, green and red are used. A fluorescence conversion layer made of a material that converts to blue is provided.
【0040】このように、蛍光変換層24を設けた基板
21側から光を放出することができるので、TFTによ
って光が遮断されることがないため表示画素の開口率を
最大限に設計することが可能となるとともに、TFTの
サイズや駆動能力の決定に自由度の増大が図れる。As described above, since light can be emitted from the substrate 21 side on which the fluorescence conversion layer 24 is provided, the light is not blocked by the TFT, so that the aperture ratio of the display pixel is designed to the maximum. And the degree of freedom in determining the size and driving capability of the TFT can be increased.
【0041】また、表示画素の開口率を向上できるの
で、明るい表示を得るために電流密度を大きくする必要
もなくなり有機EL素子の寿命を長くすることができ
る。Further, since the aperture ratio of the display pixels can be improved, it is not necessary to increase the current density to obtain a bright display, and the life of the organic EL element can be extended.
【0042】更に、本実施の形態においても、発光光が
陽極に設けた蛍光変換層側から出射されるので従来の如
くTFT基板側から出射されるよりも色を発光する面積
が大きくなり明るく鮮明なカラー表示を得ることができ
る。Further, also in this embodiment, since the emitted light is emitted from the side of the fluorescent conversion layer provided on the anode, the area for emitting the color is larger than that of the conventional example, which is emitted from the side of the TFT substrate. Color display can be obtained.
【0043】なお、上述の各実施の形態においては、色
要素としてカラーフィルタ又は蛍光変換層を用いた場合
を示したが、カラー表示を必要としない場合には、カラ
ーフィルタ及び蛍光変換層は不要である。In each of the above embodiments, the case where a color filter or a fluorescent conversion layer is used as a color element has been described. However, when a color display is not required, the color filter and the fluorescent conversion layer are unnecessary. It is.
【0044】また、上述の各実施の形態においては、T
FTの構造はボトムゲート型について説明したが本発明
はそれに限るものではなく、ゲート電極が能動層の上方
に設けられるいわゆるトップゲート型でもよい。In each of the above embodiments, T
Although the structure of the FT has been described as a bottom gate type, the present invention is not limited thereto, and a so-called top gate type in which a gate electrode is provided above an active layer may be used.
【0045】[0045]
【発明の効果】本発明の表示装置によれば、有機EL素
子からの光放出の方向がTFTを設けていない透明絶縁
性基板側であるため、放出される光がTFTによって遮
断されることがなく表示画素の開口率が低下することが
ない。According to the display device of the present invention, since the direction of light emission from the organic EL element is on the side of the transparent insulating substrate on which no TFT is provided, the emitted light can be blocked by the TFT. Therefore, the aperture ratio of the display pixel does not decrease.
【0046】また、TFTが発光光を遮断することがな
いので、TFTの大きさのサイズ及びTFTの能力を最
大限にすることが可能である。Further, since the TFT does not block the emitted light, it is possible to maximize the size of the TFT and the capacity of the TFT.
【0047】更に、開口率が大きくできることから明る
い表示を得るために電流密度を大きくする必要もなくな
り有機EL素子の寿命を長くすることができる。Further, since the aperture ratio can be increased, it is not necessary to increase the current density in order to obtain a bright display, and the life of the organic EL element can be extended.
【0048】更にまた、発光光が陰極側に設けた色要素
側から出射されるので、従来の如くTFT基板側から出
射されるよりも色面積が大きくなり明るく鮮明なカラー
表示を得ることができる。Further, since the emitted light is emitted from the color element side provided on the cathode side, the color area is larger than that emitted from the TFT substrate side as in the conventional case, and a bright and clear color display can be obtained. .
【図1】本発明の表示装置の第1実施形態を示す断面図
である。FIG. 1 is a sectional view showing a first embodiment of a display device of the present invention.
【図2】本発明の表示装置の第2実施形態を示す断面図
である。FIG. 2 is a sectional view showing a second embodiment of the display device of the present invention.
【図3】従来の表示装置の断面図である。FIG. 3 is a cross-sectional view of a conventional display device.
2 基板 12 陽極 14 発光層 17 陰極 22 カラーフィルタ 24 蛍光変換層 2 substrate 12 anode 14 light emitting layer 17 cathode 22 color filter 24 fluorescence conversion layer
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB00 AB04 BA06 BB00 BB06 CA01 CA03 CB01 DA00 DB03 EB00 5C094 AA08 AA37 BA03 BA27 CA19 EA04 ED02 FB01 HA10 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB00 AB04 BA06 BB00 BB06 CA01 CA03 CB01 DA00 DB03 EB00 5C094 AA08 AA37 BA03 BA27 CA19 EA04 ED02 FB01 HA10
Claims (2)
薄膜トランジスタと、該薄膜トランジスタの上層に、該
薄膜トランジスタのソース又はドレインに接続され不透
明導電材料からなる陽極、発光素子層、及び透明導電材
料からなる陰極を順に積層して成り、前記薄膜トランジ
スタによって駆動されるエレクトロルミネッセンス素子
と、を備えていることを特徴とする表示装置。1. A thin film transistor provided with a source and a drain on a substrate, and an upper layer of the thin film transistor which is connected to a source or a drain of the thin film transistor and is made of an opaque conductive material, a light emitting element layer, and a transparent conductive material. A display device comprising: an electroluminescent element formed by sequentially stacking cathodes and driven by the thin film transistor.
記陰極側に色要素を備えた透明基板を配置し、該透明基
板上の色要素はカラーフィルタ層又は蛍光変換層である
ことを特徴とする請求項1記載の表示装置。2. The electroluminescent device according to claim 1, wherein a transparent substrate having a color element is disposed on the cathode side of the electroluminescent element, and the color element on the transparent substrate is a color filter layer or a fluorescence conversion layer. The display device according to the above.
Priority Applications (1)
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JP10245244A JP2000077191A (en) | 1998-08-31 | 1998-08-31 | Display device |
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JP10245244A JP2000077191A (en) | 1998-08-31 | 1998-08-31 | Display device |
Publications (1)
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---|---|
JP2000077191A true JP2000077191A (en) | 2000-03-14 |
Family
ID=17130812
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002075643A (en) * | 2000-08-29 | 2002-03-15 | Tdk Corp | Organic el display panel and organic el device used therein |
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US8866184B2 (en) | 2001-02-19 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2015141775A (en) * | 2014-01-27 | 2015-08-03 | 株式会社ジャパンディスプレイ | organic EL display device |
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WO2022180482A1 (en) * | 2021-02-25 | 2022-09-01 | 株式会社半導体エネルギー研究所 | Display device, display module, electronic apparatus, and method for manufacturing display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08241047A (en) * | 1994-12-14 | 1996-09-17 | Eastman Kodak Co | Manufacture of tft- el picture element |
JPH10162959A (en) * | 1996-11-29 | 1998-06-19 | Idemitsu Kosan Co Ltd | Organic electro-luminescence element |
JPH10161563A (en) * | 1996-11-29 | 1998-06-19 | Tdk Corp | Organic electroluminescence display device |
JPH10189252A (en) * | 1996-12-26 | 1998-07-21 | Idemitsu Kosan Co Ltd | Organic active electroluminescent light emitting device |
-
1998
- 1998-08-31 JP JP10245244A patent/JP2000077191A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08241047A (en) * | 1994-12-14 | 1996-09-17 | Eastman Kodak Co | Manufacture of tft- el picture element |
JPH10162959A (en) * | 1996-11-29 | 1998-06-19 | Idemitsu Kosan Co Ltd | Organic electro-luminescence element |
JPH10161563A (en) * | 1996-11-29 | 1998-06-19 | Tdk Corp | Organic electroluminescence display device |
JPH10189252A (en) * | 1996-12-26 | 1998-07-21 | Idemitsu Kosan Co Ltd | Organic active electroluminescent light emitting device |
Cited By (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US8227809B2 (en) | 1999-06-04 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US7701134B2 (en) | 1999-06-04 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with improved operating performance |
US7741775B2 (en) | 1999-06-04 | 2010-06-22 | Semiconductor Energy Laboratories Co., Ltd. | Electro-optical device and electronic device |
US9368680B2 (en) | 1999-06-04 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US9123854B2 (en) | 1999-06-04 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US6894312B2 (en) | 1999-09-17 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | EL display device |
US9059049B2 (en) | 1999-09-17 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | EL display device |
US9735218B2 (en) | 1999-09-17 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and method for manufacturing the same |
US7952103B2 (en) | 1999-09-17 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and method for manufacturing the same |
US9431470B2 (en) | 1999-09-17 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7518146B2 (en) | 1999-09-17 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | EL display device including color filter and light shielding film |
US9923171B2 (en) | 2000-04-21 | 2018-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Self-light emitting device and electrical appliance using the same |
JP2012048260A (en) * | 2000-04-21 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | Self-light-emitting device |
US8686624B2 (en) | 2000-04-21 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Self-light emitting device and electrical appliance using the same |
JP2002075643A (en) * | 2000-08-29 | 2002-03-15 | Tdk Corp | Organic el display panel and organic el device used therein |
JP2003036969A (en) * | 2000-10-25 | 2003-02-07 | Matsushita Electric Ind Co Ltd | Light emitting element, and display unit and illumination device using the same |
US7741771B2 (en) | 2000-10-25 | 2010-06-22 | Panasonic Corporation | Light-emitting element and display device and lighting device using same |
US7342246B2 (en) | 2000-10-25 | 2008-03-11 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element and display device and lighting device using same |
JP2005135929A (en) * | 2001-02-19 | 2005-05-26 | Semiconductor Energy Lab Co Ltd | Formation method of light emitting device |
US9954196B2 (en) | 2001-02-19 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US8866184B2 (en) | 2001-02-19 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US9502679B2 (en) | 2001-02-19 | 2016-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2002334790A (en) * | 2001-02-19 | 2002-11-22 | Semiconductor Energy Lab Co Ltd | Light emitting device and its formation method |
US9768405B2 (en) | 2001-02-19 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2002246185A (en) * | 2001-02-22 | 2002-08-30 | Victor Co Of Japan Ltd | Organic electroluminescence element |
WO2002103663A1 (en) * | 2001-06-13 | 2002-12-27 | Sony Corporation | Tie-ring type display device, and method of manufacturing the display device |
JP2002372928A (en) * | 2001-06-13 | 2002-12-26 | Sony Corp | Tiling type display device and manufacturing method therefor |
JP2003036974A (en) * | 2001-07-23 | 2003-02-07 | Victor Co Of Japan Ltd | Organic electroluminescence element and manufacturing method therefor |
JP2003076301A (en) * | 2001-09-07 | 2003-03-14 | Matsushita Electric Ind Co Ltd | Light emitting element and display device using the element |
JP2004164853A (en) * | 2001-09-28 | 2004-06-10 | Semiconductor Energy Lab Co Ltd | Light emitting device |
US7108574B2 (en) | 2001-09-28 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2004127592A (en) * | 2001-09-28 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Manufacturing method of light-emitting device |
US7193359B2 (en) | 2001-09-28 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US9406903B2 (en) | 2001-10-30 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9818978B2 (en) | 2001-10-30 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8790938B2 (en) | 2001-10-30 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100861070B1 (en) * | 2001-10-30 | 2008-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting device |
US9099678B2 (en) | 2001-10-30 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100426031B1 (en) * | 2001-12-29 | 2004-04-03 | 엘지.필립스 엘시디 주식회사 | an active matrix organic electroluminescence display and a manufacturing method of the same |
JP2016040783A (en) * | 2002-01-24 | 2016-03-24 | 株式会社半導体エネルギー研究所 | Light-emitting device |
JP2018022700A (en) * | 2002-01-24 | 2018-02-08 | 株式会社半導体エネルギー研究所 | Light-emitting device |
JP2021153059A (en) * | 2002-01-24 | 2021-09-30 | 株式会社半導体エネルギー研究所 | Light-emitting device |
JP2019192650A (en) * | 2002-01-24 | 2019-10-31 | 株式会社半導体エネルギー研究所 | Light-emitting device |
US9653519B2 (en) | 2002-01-24 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
JP2003223992A (en) * | 2002-01-31 | 2003-08-08 | Toyota Industries Corp | Organic el color display device |
JP2003223993A (en) * | 2002-01-31 | 2003-08-08 | Toyota Industries Corp | El color display device |
US7109649B2 (en) | 2002-01-31 | 2006-09-19 | Kabushiki Kaisha Toyota Jidoshokki | Organic electroluminescent color display unit |
JP2003317952A (en) * | 2002-04-26 | 2003-11-07 | Fuji Electric Co Ltd | Manufacturing method for organic el display and manufacturing method for color conversion filter substrate |
JP4618444B2 (en) * | 2002-06-07 | 2011-01-26 | エルジー エレクトロニクス インコーポレイティド | AMEL (active matrix EL) display panel and manufacturing method thereof |
JP2007142446A (en) * | 2002-06-07 | 2007-06-07 | Lg Electron Inc | Amel (active matrix el) display panel and manufacturing method therefor |
US7282736B2 (en) | 2002-12-10 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting structure including an exposed electrode overlapping a wiring or conductive layer |
US7154218B2 (en) | 2002-12-10 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Lighting emitting device and method of fabricating the same |
US7614929B2 (en) | 2002-12-10 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Lighting emitting device and method of fabricating the same |
US7491562B2 (en) | 2002-12-10 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
WO2004077886A1 (en) * | 2003-02-27 | 2004-09-10 | Kabushiki Kaisha Toyota Jidoshokki | Organic electroluminescent device |
JPWO2004077886A1 (en) * | 2003-02-27 | 2006-06-08 | 株式会社豊田自動織機 | Organic electroluminescence device |
DE102004010000B4 (en) * | 2003-03-12 | 2015-11-26 | Unified Innovative Technology, Llc | Method and apparatus for producing an organic EL display device |
JP2004335143A (en) * | 2003-04-30 | 2004-11-25 | Canon Inc | Light emitting element |
US7820478B2 (en) | 2003-04-30 | 2010-10-26 | Canon Kabushiki Kaisha | Light-emitting device |
US7750340B2 (en) | 2003-04-30 | 2010-07-06 | Canon Kabushiki Kaisha | Light-emitting device |
US7215075B2 (en) | 2003-05-02 | 2007-05-08 | Fuji Electric Holdings Co., Ltd. | Organic el device having upper electrode including plurality of transparent electrode layers and method for manufacturing the same |
JP2004335207A (en) * | 2003-05-02 | 2004-11-25 | Fuji Electric Holdings Co Ltd | Organic el element and its manufacturing method |
JP2012230913A (en) * | 2003-06-16 | 2012-11-22 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
US6932665B2 (en) | 2003-07-24 | 2005-08-23 | Fuji Electric Co., Ltd. | Method of manufacturing organic EL display and color conversion filter substrate |
JP2009076475A (en) * | 2003-09-22 | 2009-04-09 | Samsung Mobile Display Co Ltd | Manufacturing method of full-color organic electroluminescent element having color adjustment layer |
US9461271B2 (en) | 2003-10-03 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
JP2014045225A (en) * | 2003-10-03 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | Electronic apparatus and element structure |
US8994007B2 (en) | 2003-10-03 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
JP2004326130A (en) * | 2004-07-30 | 2004-11-18 | Sony Corp | Tiling display device |
KR100819975B1 (en) * | 2005-01-19 | 2008-04-07 | 후지 덴키 홀딩스 가부시키가이샤 | Organic el display |
CN102543860A (en) * | 2010-12-29 | 2012-07-04 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polysilicon TFT (thin-film transistor) array substrate |
US8569122B2 (en) | 2010-12-29 | 2013-10-29 | Boe Technology Group., Ltd. | Manufacturing method for LTPS TFT array substrate |
JP2015141775A (en) * | 2014-01-27 | 2015-08-03 | 株式会社ジャパンディスプレイ | organic EL display device |
WO2022167894A1 (en) * | 2021-02-05 | 2022-08-11 | 株式会社半導体エネルギー研究所 | Display device |
WO2022180482A1 (en) * | 2021-02-25 | 2022-09-01 | 株式会社半導体エネルギー研究所 | Display device, display module, electronic apparatus, and method for manufacturing display device |
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