JP2000012495A - Surface treatment system for semiconductor wafer, or the like - Google Patents

Surface treatment system for semiconductor wafer, or the like

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Publication number
JP2000012495A
JP2000012495A JP10173125A JP17312598A JP2000012495A JP 2000012495 A JP2000012495 A JP 2000012495A JP 10173125 A JP10173125 A JP 10173125A JP 17312598 A JP17312598 A JP 17312598A JP 2000012495 A JP2000012495 A JP 2000012495A
Authority
JP
Japan
Prior art keywords
tank
processing liquid
inner tank
surface treatment
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10173125A
Other languages
Japanese (ja)
Inventor
Tamotsu Mesaki
保 目崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10173125A priority Critical patent/JP2000012495A/en
Publication of JP2000012495A publication Critical patent/JP2000012495A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a surface treatment system for semiconductor wafer, or the like, having high production yield in which high quality surface treatment can be performed while eliminating fluctuation (of treatment) by realizing uniformity of temperature distribution of processing liquid in a tank where a medium is immersed into the processing liquid and subjected to surface treatment. SOLUTION: An external tank 2 contains media W to be processed vertically in parallel while surrounding at least the side face of an inner tank 1 storing processing liquid M being fed from the bottom by circulation system and stores the overflowing processing liquid M while keeping the water level L where the processing liquid touches the entire side face of the inner tank 1. The inner tank 1 is heat-insulated by the outer tank 2 and the processing liquid M stored therein thus ensuring uniformity of temperature at each distributing position of the processing liquid M in the inner tank 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、シリコンウェハ
ー、液晶用ガラス基板、化合物半導体ウェハー等の被処
理媒体の表面を薬液等の処理液を用いて洗浄、或いはエ
ッチング等の表面処理を行うために使用される半導体ウ
ェハー等の表面処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a surface of a medium to be processed, such as a silicon wafer, a glass substrate for liquid crystal, or a compound semiconductor wafer, using a processing solution such as a chemical solution or performing a surface treatment such as etching. The present invention relates to an apparatus for treating a surface of a semiconductor wafer or the like to be used.

【０００２】[0002]

【従来の技術】従来から知られているこの種の表面処理
装置は、例えば図５に例示したように、被処理媒体Ｗが
垂直並列状に収容されると共に処理液Ｍが循環方式にて
貯溜される処理槽１０の上部開口側に、当該側面を包囲
するように受樋２０を設け、この受樋２０と前記処理槽
１０との双方の底部を循環流路３０にて接続すると共
に、循環流路３０の流路途中には処理液Ｍの温度を設定
温度に保持する加熱（加温）と処理液中から不純物を取
り除く濾過を行う循環垣温系４０を具備し、処理液Ｍを
底部から処理槽１０内に被処理媒体Ｗが没入状に浸漬す
る水位まで送り込みながら、処理液Ｍ（オーバーフロー
水）を処理槽１０の上部開口から受樋２０側にオーバー
フローさせながら被処理媒体Ｗの表面の洗浄、或いはエ
ッチング等の表面処理を行うように構成されている。2. Description of the Related Art As shown in FIG. 5, for example, a surface treatment apparatus of this type in which a medium W to be treated is accommodated in a vertical parallel arrangement and a treatment liquid M is stored in a circulating manner. A trough 20 is provided on the upper opening side of the processing tank 10 to surround the side surface, and both the bottom of the trough 20 and the bottom of the processing tank 10 are connected by a circulation flow path 30 and circulated. In the middle of the flow path 30, there is provided a circulation wall temperature system 40 for heating (heating) for maintaining the temperature of the processing liquid M at a set temperature and for filtering to remove impurities from the processing liquid. The surface of the medium W to be processed while the processing liquid M (overflow water) overflows from the upper opening of the processing tank 10 to the receiving gutter 20 side while being sent to the water level at which the medium W to be processed is immersed in the processing tank 10 from above. Surface treatment such as cleaning or etching It is configured to perform.

【０００３】因みに、所要の温度（℃）に加温された処
理液中に被処理媒体を没入状に浸漬させた状態で尚且つ
被処理媒体の表面に処理液を所要の流速（m/s）にて接
触させながら行うこの種の表面処理方法においては、被
処理媒体の表面全体に対する反応速度の均一性を保つこ
とが非常に重要な要素であり、それが製造歩留まりに大
きく影響を与えるものである。Incidentally, the processing liquid is immersed in the processing liquid heated to a required temperature (° C.) in a state of being immersed, and the processing liquid is applied to the surface of the processing medium at a required flow rate (m / s). In this type of surface treatment method in which contact is performed in step (1), it is very important to maintain uniformity of the reaction rate over the entire surface of the medium to be treated, and this greatly affects the production yield. It is.

【０００４】つまり、処理槽の底部から同槽内に送り込
まれた処理液が受樋側にオーバーフローされる処理槽の
上部開口側へと流れる過程で、被処理媒体の表面との接
触により化学反応を起こし、この化学反応により表面の
洗浄、或いはエッチング等の表面処理が成されるもので
あるが、この化学反応の反応速度は処理液の温度（℃）
や被処理媒体の表面に接触しながら流れる処理液の流速
（m/s）によって大きく左右されるものである。特に、
被処理媒体の表面に接触しながら流れる処理液の該表面
各所における温度分布等にバラツキが生じると、それに
平行して被処理媒体の表面各所における反応速度にもバ
ラツキが生じ、その反応速度差による処理ムラが生じる
ものである。That is, in the process in which the processing liquid sent into the processing tank from the bottom of the processing tank flows to the upper opening side of the processing tank overflowing to the receiving trough, chemical reaction occurs due to contact with the surface of the medium to be processed. This chemical reaction causes surface treatment such as surface cleaning or etching. The reaction rate of this chemical reaction is the temperature of the processing solution (° C.).
And the flow rate (m / s) of the processing liquid flowing while contacting the surface of the medium to be processed. In particular,
When the temperature distribution and the like of the processing liquid flowing while contacting the surface of the medium to be processed vary, the reaction speed at the various places of the surface of the processing medium also varies in parallel, and the reaction speed difference causes the variation. Processing unevenness occurs.

【０００５】[0005]

【発明が解決しようとする課題】ところで、前述した従
来装置は受樋で囲まれている処理槽の上部開口側を除く
その側面及び底部は直接外気と接触することになること
から、外気（室温）に左右され易く、処理槽内における
上部開口側とその下部側、そして、槽壁に近い部分とそ
の槽内中心部とでは処理液の温度の均一性は保証されな
い。何故ならば、処理槽の下部側、そして槽壁に近い部
分は外気が直接触れる槽壁を介しての熱交換（温度降
下）が激しく、そのために、図示したＡ点，Ｂ点，Ｃ
点，Ｄ点，Ｅ点等の各分布位置における処理液の温度に
バラツキが生じ易いものである。In the above-mentioned conventional apparatus, since the side and bottom of the processing tank surrounded by the gutter except for the upper opening side come into direct contact with the outside air, the outside air (at room temperature). ), The uniformity of the temperature of the processing liquid is not guaranteed between the upper opening side and the lower side thereof in the processing tank, and the portion close to the tank wall and the center of the processing tank. This is because heat exchange (temperature drop) through the tank wall, which is directly in contact with the outside air, is severe at the lower side of the processing tank and near the tank wall.
The temperature of the processing liquid at each distribution position such as point D, point E, etc. tends to vary.

【０００６】又、この温度分布のバラツキ現象は処理す
る被処理媒体の大きさ（直径や幅等）が大きくなればな
る程、深刻な影響を及ぼす。現在の被処理媒体、例えば
シリコンウエハーの主流は６inchと８inch（φ200mm）
であるが、今後はφ300mm等の大きなシリコンウエハー
の処理においては温度分布のバタツキによる化学反応の
反応速度差が深刻に影響を及ぼす。つまり、被処理媒体
の中心部とその周縁部（前述したＡ点とＢ点）では化学
反応の反応速度差が深刻に影響を及ぼすこととなり、そ
の製造歩留まりを下げるばかりか、品質面においても影
響を受けることとなる。[0006] The variation in the temperature distribution has a more serious effect as the size (diameter, width, etc.) of the medium to be processed increases. The current mainstream of the medium to be processed, for example, silicon wafers is 6 inch and 8 inch (φ200mm)
However, in the future, in the processing of large silicon wafers such as φ300 mm, the reaction rate difference of the chemical reaction due to the flapping of the temperature distribution will have a serious effect. In other words, the difference in the reaction rate of the chemical reaction has a serious effect at the central portion of the medium to be processed and at the peripheral portion thereof (points A and B described above), which not only lowers the production yield but also affects the quality. Will be received.

【０００７】因みに、処理槽の材質は使用する薬液等か
ら影響を受け難い石英等からなる。又、処理槽内におけ
る処理液の温度（℃）は使用する条件や処理する被処理
媒体の種類によって異なるが、目標温度としては５〜17
0℃の範囲が好ましいとされている。[0007] Incidentally, the material of the processing tank is made of quartz or the like which is hardly affected by a chemical solution or the like to be used. The temperature (° C.) of the processing liquid in the processing tank varies depending on the conditions used and the type of the medium to be processed.
A range of 0 ° C. is preferred.

【０００８】本発明はこの様な従来事情に鑑みてなされ
たもので、その目的とする処は、被処理媒体が没入状に
浸漬されて表面処理が施される処理液の槽内における温
度分布の均一性を実現して、バラツキ（処理ムラ）のな
い表面処理を可能ならせしめて品質が良く、しかも製造
歩留まりが高い半導体ウエハー等の表面処理装置を提供
することにある。The present invention has been made in view of such a conventional situation, and an object thereof is to provide a temperature distribution in a tank of a processing liquid in which a medium to be processed is immersed and surface treatment is performed. It is an object of the present invention to provide a surface treatment apparatus for semiconductor wafers and the like which realizes uniformity of the surface, enables a surface treatment without variation (process unevenness), and has a high quality and a high production yield.

【０００９】[0009]

【課題を達成するための手段】課題を達成するために本
発明は、多数枚の被処理媒体が垂直並列状に収容される
と共に処理液が循環方式にて底部から送り込まれながら
貯溜される内槽の少なくとも側面を包囲し、且つ被処理
媒体が没入状に浸漬するその上部側からオーバーフロー
される処理液を、内槽の側面に接触する水位高さにて貯
溜し且つ該水位高さを保ちながら受け取る外槽を設け、
更にこの外槽と前記内槽との双方の底部を循環流路にて
接続してなることである。又、外槽により包囲されてい
ない内槽の底部に加熱又は保温手段を付設したことであ
る。加熱手段としてはヒーター等の発熱体が望ましい。
又、内槽の側面のみならずその底部を包囲するように外
槽を設けたことである。又、外槽の底部及び側面を包囲
するように保温手段を付設したことである。又、内槽の
底部、外槽の底部及び側面に付設する前記保温手段とし
ては処理液による損傷等を受け難い材料からなる断熱
材、又は外気との接触を防ぐ空気断熱層等が望ましい。
又、外槽が、内槽からオーバーフローされる余分な処理
液を受け取る上部開口側を内槽の側面から離した拡開形
とし、該上部開口側を除く部分を内槽の側面に沿うよう
に近づけた絞り形状とする縦断略クランク形状に形成さ
れていることである。SUMMARY OF THE INVENTION In order to achieve the object, the present invention relates to a method for storing a plurality of media to be processed in a vertical parallel arrangement and storing a processing liquid while being fed from the bottom in a circulating manner. A processing liquid that surrounds at least the side surface of the tank and overflows from the upper side where the medium to be processed is immersed is stored at the water level that contacts the side surface of the inner tank and is maintained at the water level. Set up an outer tank to receive while
Further, the bottom of both the outer tank and the inner tank is connected by a circulation channel. Further, a heating or heat retaining means is provided at the bottom of the inner tank which is not surrounded by the outer tank. As a heating means, a heating element such as a heater is desirable.
Further, an outer tank is provided so as to surround not only the side surface of the inner tank but also the bottom thereof. Further, a heat retaining means is provided so as to surround the bottom and side surfaces of the outer tank. Further, as the heat retaining means provided on the bottom of the inner tank, the bottom and side surfaces of the outer tank, a heat insulating material made of a material which is hardly damaged by the processing liquid, an air heat insulating layer for preventing contact with the outside air, and the like are desirable.
Also, the outer tank is of an expanded type in which an upper opening side for receiving excess processing liquid overflowing from the inner tank is separated from the side surface of the inner tank, and a portion excluding the upper opening side is along the side surface of the inner tank. That is, it is formed in a substantially crank shape in a longitudinal section to be a draw shape approached.

【００１０】而して、上記した技術的手段によれば、循
環方式によって内槽の底部から同槽内に送り込まれ、垂
直並列状に収容されている被乾燥媒体の表面に接触しな
がら上部へと流れてきた処理液はその上部側から外槽側
へオーバーフローされる。外槽側にオーバーフローされ
た処理液は内槽の側面に接触する水位高さにて外槽内に
貯溜された状態に保たれ、同外槽の底部から循環方式に
よって内槽へと送り込まれる。それにより、内槽の側面
は包囲する外槽並びに同側面に接触する水位高さにて貯
溜されている処理液によって外気との接触が阻止され且
つ保温される。又、内槽は、その底部に付設されている
加熱又は保温手段、特にヒーター等の発熱体からなる加
熱手段によってその底部側から効果的に加温される。
又、内槽は、側面のみならず底部をも外槽並びに底部か
ら側面に接触する水位高さにて貯溜されている処理液に
よって外気との接触が阻止された状態で保温される。
又、内槽からオーバーフローされた処理液が貯溜される
外槽は、その側面及び底部に付設されている断熱材等か
らなる保温手段により、外気との接触（熱交換）が阻止
されることは勿論、槽壁からの放熱を阻止することがで
きることで、外槽内の処理液の温度低下を防ぐことがで
きる。つまり、内槽内の処理液の温度分布は均一に保た
れる。According to the above-mentioned technical means, the medium is fed into the inner tank by the circulation system from the bottom of the inner tank, and is brought into contact with the surface of the medium to be dried, which is housed in a vertical parallel arrangement, and moves upward. Flows from the upper side to the outer tank side. The processing liquid overflowing to the outer tub side is kept in the outer tub at a water level contacting the side surface of the inner tub, and is sent into the inner tub from the bottom of the outer tub by a circulation method. As a result, the side surface of the inner tank is prevented from contacting with the outside air and kept warm by the processing liquid stored at the level of the water level in contact with the surrounding outer tank and the side surface. Further, the inner tank is effectively heated from the bottom side by a heating or heat retaining means attached to the bottom, particularly a heating means comprising a heating element such as a heater.
In addition, the inner tank is kept warm in a state where contact with the outside air is prevented by the processing liquid stored not only at the side surface but also at the bottom at the water level at which the outer tank and the bottom contact the side surface.
The outer tank in which the processing liquid overflowed from the inner tank is stored is prevented from being in contact with the outside air (heat exchange) by a heat retaining means such as a heat insulating material attached to the side and bottom of the outer tank. Of course, since the heat radiation from the tank wall can be prevented, the temperature of the processing solution in the outer tank can be prevented from lowering. That is, the temperature distribution of the processing liquid in the inner tank is kept uniform.

【００１１】[0011]

【発明の実施の形態】本発明の実施の具体例を図面に基
づいて説明する。図１は請求項１に係る本発明表面処理
装置の実施の一例を示した概略図で、１は被処理媒体Ｗ
を垂直並列状に収容されると共に処理液Ｍが循環方式に
て貯溜される内槽、２は内槽を包囲するように付設され
る外槽、３は内槽１と外槽２との双方の底部を接続し、
被処理媒体Ｗが没入状に浸漬するその上部側から外槽２
内にオーバーフローされた処理液Ｍを循環方式にて内槽
１内へと送り込む循環流路であり、この循環流路３の流
路途中には循環垣温系４を具備してなる。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view showing an embodiment of the surface treatment apparatus according to the present invention, wherein 1 is a medium W to be treated.
Are stored vertically in parallel and the processing solution M is stored in a circulating manner. 2 is an outer tank provided so as to surround the inner tank. 3 is both the inner tank 1 and the outer tank 2. Connect the bottom of
The outer tank 2 from the upper side where the medium to be treated W is immersed
A circulation flow path for feeding the processing liquid M overflowing into the inside of the inner tank 1 in a circulation manner, and a circulation wall temperature system 4 is provided in the middle of the circulation flow path 3.

【００１２】内槽１は、多数枚の被処理媒体を図２に示
したように、適宜の間隔をおいて垂直並列状に収容し得
る大きさを有する平面略矩形状で且つ被処理媒体Ｗを没
入状に浸漬し得る深さを有する上部開口の有底箱型に形
成され、中央に向けて傾斜するその底部中央に接続した
循環流路３によって底部中央から処理液Ｍが送り込まれ
るようにしてなる。又、この内槽１の底部裏面には加熱
又は保温手段、図においては加熱手段５が付設されてお
り、内槽をその底部から加熱保温するようにしてなる。
加熱手段５としてはヒーター等の発熱体が望ましい。
又、内槽１内の底部には整流板６が付設されており、底
部中央から循環送り込まれてくる処理液Ｍが全ての被処
理媒体Ｗの表面に対し、効果的な化学反応が得られる流
速（m/s）にて接触しながら流れるようにしてなる。As shown in FIG. 2, the inner tank 1 has a substantially rectangular planar shape having a size capable of accommodating a large number of processing media in a vertical parallel arrangement at appropriate intervals. The processing liquid M is fed from the center of the bottom by a circulation channel 3 connected to the center of the bottom, which is formed in a bottomed box shape having an upper opening having a depth capable of immersing the substrate and sloping toward the center. It becomes. Further, a heating or heat retaining means, in the figure, a heating means 5 is provided on the bottom rear surface of the inner tank 1 so that the inner tank is heated and kept warm from its bottom.
The heating means 5 is preferably a heating element such as a heater.
In addition, a current plate 6 is attached to the bottom of the inner tank 1 so that the processing liquid M circulated from the center of the bottom can obtain an effective chemical reaction on the surface of all the processing media W. It flows while contacting at a flow rate (m / s).

【０００１３】外槽２は、内槽１の槽壁の外気（室温）
との接触を防ぐと共に該槽壁を保温し、内槽１内の処理
液Ｍの温度降下を防ぐ役目を成すもので、内槽１の側面
全面を、適宜の間隔をおいて包囲し得るように内槽より
も一回り程大きい上部開口の箱型に形成され、その底部
を内槽１の底部に固着連設せしめた状態で内槽の回りに
付設せしめて、内槽１からオーバーフローされる処理液
Ｍを貯溜し得る程度の空間が内槽１との間に確保形成し
てなる。又、この外槽２は図示したように、内槽１から
オーバーフローされる処理液Ｍを受け取る上部開口側を
内槽１から離した拡開形状とし、該上部開口側から内槽
１との連設底部に至る部分を内槽１の側面に沿わせるよ
うに近づけた絞り形状とする槽壁を縦断面略クランク形
状に形成し、その連設底部に循環流路３を接続してな
る。つまり、内槽１の側面に接触する水位高さＬにてオ
ーバーフローされてくる処理液Ｍを貯溜し且つ該水位高
さＬを保持しながら処理液Ｍを、内槽１内へとその底部
側から循環方式にて送り込むようにしてなる。The outer tank 2 is outside air (room temperature) on the tank wall of the inner tank 1.
And serves to prevent the temperature of the processing liquid M in the inner tank 1 from dropping while keeping the tank wall warm, so that the entire side surface of the inner tank 1 can be surrounded at appropriate intervals. Is formed in a box shape having an upper opening that is slightly larger than the inner tank, and is attached around the inner tank with its bottom fixedly connected to the bottom of the inner tank 1 and overflows from the inner tank 1. A space large enough to store the treatment liquid M is formed between the inner tank 1 and the space. Further, as shown in the drawing, the outer tank 2 has an upper opening side for receiving the processing liquid M overflowing from the inner tank 1 and has an expanded shape separated from the inner tank 1, and the outer tank 2 is connected to the inner tank 1 from the upper opening side. A tank wall having a throttle shape in which a portion reaching the installation bottom is brought close to the side surface of the inner tank 1 is formed in a substantially crank shape in longitudinal section, and a circulation channel 3 is connected to the continuous bottom. That is, the processing liquid M that overflows at the water level L that contacts the side surface of the inner tank 1 is stored, and the processing liquid M is transferred into the inner tank 1 while maintaining the water level L at the bottom side. From the circulation system.

【００１４】因みに、循環流路３の循環垣温系４は、処
理液Ｍの温度を設定温度に加熱（加温）する加熱手段
と、例えば化学反応によって被処理媒体Ｗから取り除か
れた有機又は無機物等の不純物を処理液Ｍ中から取り除
く濾過手段とを備え、更に外槽２内の処理液Ｍを内槽１
内へと所要の流速にて循環送り込むための流速可変調節
式のポンプ手段等を備えてなるものである。Incidentally, the circulation wall temperature system 4 of the circulation flow path 3 is provided with a heating means for heating (heating) the temperature of the processing liquid M to a set temperature, and an organic or organic material removed from the processing medium W by a chemical reaction, for example. A filtering means for removing impurities such as inorganic substances from the processing liquid M;
It is provided with a pump means of a variable flow rate adjusting type for circulating and feeding into the inside at a required flow rate.

【００１５】次に、以上の如く構成した表面処理装置に
よる被処理媒体Ｗの表面処理方法を説明すると、所要の
温度（℃）、例えば２２℃位に設定加温された処理液Ｍ
が循環方式にて貯溜されると共に、電気ヒーター等の発
熱体からなる加熱手段５にて底部から加熱保温されてい
る内槽１内に多数の被処理媒体Ｗを垂直並列状に収容セ
ットし、循環垣温系４を作動させる。すると、内槽１内
にはその底部から送り込まれる処理液Ｍによって同槽１
の上部開口側へと被処理媒体Ｗの表面に所要の流速にて
接触しながら流れる処理液Ｍの流れが発生すると共に、
上部開口側へと流れてきた処理液Ｍは外槽２側へオーバ
ーフローされる。外槽２内へオーバーフローされた処理
液Ｍが内槽１の側面に接触する水位高さＬにて外槽２内
に貯溜され且つ該水位高さＬが保たれた状態で外槽２の
底部から循環流路３によって内槽１内へとその底部から
送り込まれる循環方式にて被処理媒体Ｗの洗浄、或いは
エッチング等の表面処理が行われる。Next, a method for treating the surface of the medium W to be treated by the surface treating apparatus constructed as described above will be described. The treating solution M heated to a required temperature (° C.), for example, about 22 ° C.
Are stored in a circulating manner, and a large number of mediums W to be processed are accommodated and set in a vertical parallel manner in an inner tank 1 which is kept warm from the bottom by a heating means 5 composed of a heating element such as an electric heater. Activate the circulation fence temperature system 4. Then, the processing liquid M sent from the bottom of the inner tank 1 causes the inner tank 1
The flow of the processing liquid M flowing while contacting the surface of the processing target medium W at a required flow rate to the upper opening side of
The processing liquid M flowing to the upper opening side overflows to the outer tank 2 side. The processing liquid M overflowing into the outer tank 2 is stored in the outer tank 2 at a water level L contacting the side surface of the inner tank 1 and the bottom of the outer tank 2 in a state where the water level L is maintained. The medium W to be processed is subjected to a surface treatment such as cleaning or etching by a circulation method in which the medium W is fed into the inner tank 1 from the bottom through the circulation channel 3 from the bottom.

【００１６】従って、上記した表面処理装置によれば、
内槽１の底部は加熱手段５によって加熱保温されると共
に、その側面は全面を包囲する外槽２並びに同側面の略
全面に接触する水位高さＬにて外槽２内に貯溜されてい
る処理液Ｍによって外気との接触が阻止された状態で保
温されることから、内槽１の槽壁が外気との接触により
冷やされ、該槽壁に近い部分の処理液Ｍの温度が熱交換
により降下されることがなくなる。それにより、図示し
たＡ点，Ｂ点，Ｃ点，Ｄ点，Ｅ点等の各分布位置におけ
る内槽１内の処理液Ｍの温度分布の均一性が保証される
ことから、被処理媒体Ｗの表面全体には略同一の反応速
度で進行する化学反応が起こり、該表面全体の洗浄、或
いはエッチング等の表面処理が略同時に行われる。Therefore, according to the above surface treatment apparatus,
The bottom of the inner tank 1 is heated and kept warm by the heating means 5, and its side surface is stored in the outer tank 2 at a water level L contacting the outer tank 2 surrounding the entire surface and substantially the entire side surface. Since the temperature is kept in a state where the contact with the outside air is prevented by the processing liquid M, the tank wall of the inner tank 1 is cooled by the contact with the outside air, and the temperature of the processing liquid M near the tank wall is changed by heat exchange. Will not be dropped. Thereby, the uniformity of the temperature distribution of the processing liquid M in the inner tank 1 at each distribution position such as the illustrated point A, point B, point C, point D, point E, and the like is assured. A chemical reaction that proceeds at substantially the same reaction rate occurs on the entire surface of the substrate, and surface treatment such as cleaning or etching of the entire surface is performed substantially simultaneously.

【００１７】図３は、請求項１及び３に係る本発明表面
処理装置の実施の一例を示した概略図であり、斯かる実
施例においては外槽２により内槽１を包囲するその包囲
形態を変えた以外の構成においては前述した実施例詳述
と基本的に同じことから同じ構成部分に同じ符号を用い
ることでその説明は省略するFIG. 3 is a schematic view showing an embodiment of the surface treatment apparatus according to the first and third aspects of the present invention. In such an embodiment, the outer tank 2 surrounds the inner tank 1. Since the configuration other than the above is basically the same as that of the above-described embodiment, the same reference numerals are used for the same components, and the description thereof will be omitted.

【００１８】然るに、斯かる実施例における外槽２は底
部を有し且つ槽壁を前述した実施例詳述のように縦断面
略クランク形状に形成した有底箱型に形成され、内槽１
の底部及び側面を包囲するように付設してなるものであ
る。However, the outer tank 2 in such an embodiment has a bottom and a tank wall formed in a bottomed box shape having a vertical section of a substantially crank shape as described in detail in the above-described embodiment.
Are provided so as to surround the bottom and side surfaces of the.

【００１９】而して、斯かる実施例の表面処理装置によ
れば、被処理媒体Ｗの洗浄、或いはエッチング等の表面
処理は前述した実施例詳述と同様に行われる。そして、
内槽１の底部及び側面は全面を包囲する外槽２並びに同
底部から側面の略全面に接触する水位高さＬにて外槽２
内に貯溜されている処理液Ｍによって外気との接触が阻
止された状態で保温されることから、内槽１の槽壁が外
気との接触により冷やされ、該槽壁に近い部分の処理液
Ｍの温度が熱交換により降下されることがなくなる。そ
れにより、図示したＡ点，Ｂ点，Ｃ点，Ｄ点，Ｅ点等の
各分布位置における内槽１内の処理液Ｍの温度の均一性
が保証されることから、被処理媒体Ｗの表面全体には略
同一の反応速度で進行する化学反応が起こり、該表面全
体の洗浄、或いはエッチング等の表面処理が略同時に行
われる。According to the surface treatment apparatus of this embodiment, the surface treatment such as cleaning or etching of the medium to be processed W is performed in the same manner as in the above-described embodiment. And
The bottom and side surfaces of the inner tank 1 are surrounded by an outer tank 2 surrounding the entire surface, and the outer tank 2 having a water level L contacting substantially the entire side surface from the bottom.
Since the temperature is kept in a state where the contact with the outside air is prevented by the treatment liquid M stored in the inside, the tank wall of the inner tank 1 is cooled by the contact with the outside air, and the treatment liquid in a portion near the tank wall is cooled. The temperature of M is not lowered by heat exchange. Thereby, the uniformity of the temperature of the processing liquid M in the inner tank 1 at each distribution position such as the illustrated points A, B, C, D, E and the like is guaranteed. A chemical reaction that proceeds at substantially the same reaction rate occurs on the entire surface, and surface treatment such as cleaning or etching of the entire surface is performed substantially simultaneously.

【００２０】図４は、請求項１及び請求項３乃至４に係
る本発明表面処理装置の実施の一例を示した概略図であ
り、斯かる実施例においては前述した外槽２による内槽
１の包囲形態において外槽２の底部及び側面に包囲する
ように保温手段７を付設した以外の構成においては前述
した実施例詳述と基本的に同じことから同じ構成部分に
同じ符号を用いることでその説明は省略する。FIG. 4 is a schematic view showing an embodiment of the surface treatment apparatus of the present invention according to claim 1 and claims 3 and 4. In such an embodiment, the inner tank 1 by the outer tank 2 described above is used. In the configuration except that the heat retaining means 7 is provided so as to surround the bottom and side surfaces of the outer tub 2 in the surrounding configuration, the same reference numerals are used for the same components because they are basically the same as the details of the above-described embodiment. The description is omitted.

【００２１】然るに、斯かる実施例においては内槽１の
底部及び側面を包囲するように付設した外槽２の底部及
び側面に、処理液Ｍによる損傷等を受け難い材料からな
る断熱材、又は外気との接触を防ぐ空気断熱層等、図に
おいては断熱材からなる保温手段７を付設してなるもの
である。However, in this embodiment, the bottom and side surfaces of the outer tank 2 provided so as to surround the bottom and side surfaces of the inner tank 1 are provided with a heat insulating material made of a material which is hardly damaged by the processing liquid M or the like. In the figure, a heat retaining means 7 made of a heat insulating material, such as an air heat insulating layer for preventing contact with the outside air, is provided.

【００２２】而して、斯かる実施例の表面処理装置によ
れば、被処理媒体表面の洗浄、或いはエッチング等の表
面処理は前述した実施例詳述と同様に行われる。そし
て、内槽１の底部及び側面は全面を包囲すると共に、底
部及び側面が断熱材からなる保温手段７により保温され
ている外槽２並びに同底部から側面の略全面に接触する
水位高さＬにて外槽２内に貯溜されている処理液Ｍによ
って外気との接触が阻止された状態で保温されることか
ら、内槽１の槽壁が外気との接触により冷やされ、該槽
壁に近い部分の処理液Ｍの温度が熱交換により降下され
ることがなくなる。それにより、図示したＡ点，Ｂ点，
Ｃ点，Ｄ点，Ｅ点等の各分布位置における内槽１内の処
理液Ｍの温度の均一性が前述した各実施例詳述よりもよ
り一層確実に保証されることになることから、被処理媒
体Ｗの表面全体には略同一の反応速度で進行する化学反
応が起こり、該表面全体の洗浄、或いはエッチング等の
表面処理が略同時に行われる。According to the surface treatment apparatus of this embodiment, the surface treatment such as cleaning or etching of the surface of the medium to be processed is performed in the same manner as in the above-described embodiment. The bottom and side surfaces of the inner tank 1 surround the entire surface, and the water level height L which contacts the outer tank 2 whose bottom and side surfaces are kept insulated by the heat retaining means 7 made of a heat insulating material and substantially the entire surface from the bottom to the side surface. Since the temperature is kept in a state where the contact with the outside air is prevented by the processing liquid M stored in the outside tank 2, the tank wall of the inside tank 1 is cooled by the contact with the outside air, and The temperature of the processing liquid M in the close part does not drop due to heat exchange. As a result, points A, B,
Since the uniformity of the temperature of the processing liquid M in the inner tank 1 at each distribution position such as the point C, the point D, and the point E is more reliably assured than in the above-described detailed description of each embodiment. A chemical reaction that proceeds at substantially the same reaction rate occurs on the entire surface of the medium to be processed W, and surface treatment such as cleaning or etching of the entire surface is performed substantially simultaneously.

【００２３】[0023]

【発明の効果】本発明の半導体ウエハー等の表面処理装
置は叙上の如く構成してなることから下記の作用効果を
秦する。 ．循環方式によって内槽の底部から同槽内に送り込ま
れ、垂直並列状に収容されている被乾燥媒体の表面に接
触しながら上部へと流れてきた処理液はその上部側から
内槽の側面を包囲する外槽内へオーバーフローされ、該
外槽内に内槽の側面に接触する水位高さＬにて貯溜され
ると共に、同水位高さＬが保たれた状態で外槽の底部か
ら内槽へと循環方式によって送り込まれるように構成し
てなることから、内槽は外槽によって外気との接触が阻
止され、しかも、側面の略全面に接触する水位高さＬに
て外槽内に貯溜される処理液によって保温される。よっ
て、内槽内における処理液の温度分布の均一性が保証さ
れる。The apparatus for treating a surface of a semiconductor wafer or the like according to the present invention has the following functions and effects because it is constructed as described above. . The processing solution sent from the bottom of the inner tank into the same tank by the circulation system and flowing upward while contacting the surface of the medium to be dried, which is housed in a vertical parallel, is processed from the upper side to the side of the inner tank. It overflows into the surrounding outer tank and is stored in the outer tank at the water level L contacting the side surface of the inner tank, and from the bottom of the outer tank in a state where the water level height L is maintained. The inner tank is prevented from contacting with the outside air by the outer tank, and is stored in the outer tank at a water level L that contacts almost the entire side surface. It is kept warm by the processing solution. Therefore, the uniformity of the temperature distribution of the processing liquid in the inner tank is guaranteed.

【００２４】．請求項２によれば、前述したのよう
に外槽及び該外槽内に貯溜されている処理液によって側
面が保温される内槽を、加熱又は保温手段によって底部
側から更に加温し得るように構成してなることから、内
槽内における処理液の温度分布の均一性が更に高い確実
で保証される。[0024] According to the second aspect, as described above, the outer tank and the inner tank whose side surface is kept warm by the processing liquid stored in the outer tank can be further heated from the bottom side by heating or warming means. Therefore, the uniformity of the temperature distribution of the processing solution in the inner tank is further assured and assured.

【００２５】．請求項３によれば、外槽及び該外槽内
に貯溜されている処理液によって内槽を、その側面のみ
ならず底部をも外気との接触が阻止され、しかも、処理
液によって保温し得るように構成してなることから、内
槽内における処理液の温度分布の均一性が前述したと
同様の確立で保証される。[0025] According to the third aspect, the outer tank and the processing liquid stored in the outer tank prevent the inner tank from contacting with the outside air not only on the side surface but also on the bottom thereof, and furthermore, the processing liquid can be kept warm by the processing liquid. With such a configuration, the uniformity of the temperature distribution of the processing liquid in the inner tank is guaranteed by the same establishment as described above.

【００２６】．請求項４によれば、内槽からオーバー
フローされた処理液が、その底部から側面の略全面に接
触する水位高さＬにて貯溜される外槽の側面及び底部は
保温手段によって保温された状態で内槽を包囲するよう
に構成してなることから、外槽内の処理液の温度降下を
防ぐことができる。つまり、内槽内の処理液の温度分布
の均一性がより一層効果的に保証される。[0026] According to the fourth aspect, the side and bottom of the outer tank where the processing liquid overflowed from the inner tank is stored at a water level height L in contact with substantially the entire side of the side from the bottom is kept warm by the heat retaining means. Thus, the temperature of the processing solution in the outer tank can be prevented from dropping. That is, the uniformity of the temperature distribution of the processing liquid in the inner tank is more effectively guaranteed.

【００２７】従って、本発明によれば、被処理媒体を没
入状に浸漬された状態で洗浄、或いはエッチング等の表
面処理が施される槽内における処理液の温度分布の均一
性が保証されるようにしてなることから、被処理媒体の
表面全体に略同一の反応速度で進行する化学反応が起こ
り、該表面全体の表面処理が略同時に行われる。よっ
て、従来装置のようにバラツキ（処理ムラ）等が生じる
ことなく、効果的な表面処理を可能ならせしめて品質が
良く、しかも製造歩留まりの高い画期的な半導体ウエハ
ー等の表面処理装置を提供することができる。Therefore, according to the present invention, the uniformity of the temperature distribution of the processing liquid in the tank in which the surface treatment such as cleaning or etching is performed while the medium to be processed is immersed is ensured. As a result, a chemical reaction that proceeds at substantially the same reaction rate occurs on the entire surface of the medium to be processed, and the surface treatment of the entire surface is performed substantially simultaneously. Therefore, unlike the conventional apparatus, there is provided a revolutionary surface treatment apparatus for semiconductor wafers and the like which enables effective surface treatment without causing variations (unevenness in processing) and has good quality and a high production yield. can do.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 請求項１に係る本発明表面処理装置の実施の
一例を示した概略図FIG. 1 is a schematic view showing an embodiment of the surface treatment apparatus of the present invention according to claim 1;

【図２】 同縦断概略図[Fig. 2]

【図３】 請求項１及び３に係る本発明表面処理装置の
実施の一例を示した概略図FIG. 3 is a schematic view showing an embodiment of the surface treatment apparatus according to the first and third aspects of the present invention.

【図４】 請求項１及び請求項３乃至４に係る本発明表
面処理装置の実施の一例を示した概略図FIG. 4 is a schematic diagram showing an embodiment of the surface treatment apparatus according to the present invention according to claim 1 and claims 3 and 4;

【図５】 従来例を示した表面処理装置の該略図FIG. 5 is a schematic view of a surface treatment apparatus showing a conventional example.

【符号の説明】[Explanation of symbols]

１…内槽 ２…
外槽 ３…循環経路 ４…
循環垣温系 ５…加熱手段 ７…
保温手段 Ｗ…被処理媒体 Ｍ
…処理液1 ... Inner tank 2 ...
Outer tank 3 ... Circulation route 4 ...
Circulation fence temperature system 5 ... Heating means 7 ...
Heat retaining means W: Medium to be treated M
... Treatment liquid

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 被処理媒体が垂直並列状に収容されると
共に処理液が循環方式にて貯溜される内槽の少なくとも
側面を包囲し、且つ被処理媒体が没入状に浸漬するその
上部側からオーバーフローされる処理液を、内槽の側面
に接触する水位高さにて貯溜し且つ該水位を保ちながら
受け取る外槽を設けたことを特徴とする半導体ウエハー
等の表面処理置。1. A method according to claim 1, wherein the processing medium is vertically arranged in a side-by-side manner and surrounds at least a side surface of an inner tank in which a processing liquid is stored in a circulating manner, and from an upper side where the processing medium is immersed. A surface treatment apparatus for a semiconductor wafer or the like, comprising an outer tank for storing a processing liquid to be overflowed at a water level in contact with a side surface of an inner tank and receiving the processing liquid while maintaining the water level. 【請求項２】 請求項１記載の表面処理置において、 内槽の底部に、加熱又は保温手段を付設したことを特徴
とする半導体ウエハー等の表面処理装置2. The surface treatment apparatus according to claim 1, wherein a heating or heat retaining means is provided at the bottom of the inner tank. 【請求項３】 請求項１記載の表面処理置において、 内槽の底部を包囲するように外槽を設けたことを特徴と
する半導体ウエハー等の表面処理装置。3. The surface treatment apparatus according to claim 1, wherein an outer tank is provided so as to surround a bottom of the inner tank. 【請求項４】 請求項３記載の表面処理置において、 外槽の底部及び側面を包囲するように保温手段を付設し
たことを特徴とする半導体ウエハー等の表面処理装置4. The surface treatment apparatus according to claim 3, further comprising a heat retaining means surrounding the bottom and side surfaces of the outer tank.
JP10173125A 1998-06-19 1998-06-19 Surface treatment system for semiconductor wafer, or the like Pending JP2000012495A (en)

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JP10173125A JP2000012495A (en) 1998-06-19 1998-06-19 Surface treatment system for semiconductor wafer, or the like

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Publication Number Publication Date
JP2000012495A true JP2000012495A (en) 2000-01-14

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* Cited by examiner, † Cited by third party
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JP2005272940A (en) * 2004-03-25 2005-10-06 Daishinku Corp Etching tank, and etching apparatus provided with etching tank
US20210305066A1 (en) * 2020-03-26 2021-09-30 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP4501486B2 (en) * 2004-03-25 2010-07-14 株式会社大真空 Etching treatment tank and etching treatment apparatus provided with the etching treatment tank
US20210305066A1 (en) * 2020-03-26 2021-09-30 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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