JP2000011337A - Method for protecting reading/writing transducer from discharge of static electricity, head stack assembly provided with protection from discharge of static electricity and system for protecting device from discharging phenomenon of static electricity - Google Patents
Method for protecting reading/writing transducer from discharge of static electricity, head stack assembly provided with protection from discharge of static electricity and system for protecting device from discharging phenomenon of static electricityInfo
- Publication number
- JP2000011337A JP2000011337A JP11156111A JP15611199A JP2000011337A JP 2000011337 A JP2000011337 A JP 2000011337A JP 11156111 A JP11156111 A JP 11156111A JP 15611199 A JP15611199 A JP 15611199A JP 2000011337 A JP2000011337 A JP 2000011337A
- Authority
- JP
- Japan
- Prior art keywords
- transducer
- electrostatic discharge
- stack assembly
- head stack
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 8
- 230000005611 electricity Effects 0.000 title abstract description 6
- 230000003068 static effect Effects 0.000 title abstract description 5
- 238000007599 discharging Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 45
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 abstract 2
- 230000006378 damage Effects 0.000 description 10
- 230000001052 transient effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 241000283868 Oryx Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B21/00—Head arrangements not specific to the method of recording or reproducing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B21/00—Head arrangements not specific to the method of recording or reproducing
- G11B21/16—Supporting the heads; Supporting the sockets for plug-in heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/4853—Constructional details of the electrical connection between head and arm
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/4846—Constructional details of the electrical connection between arm and support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Magnetic Heads (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の分野】この発明の分野は、ハードディスクドラ
イブ（ＨＤＤ）の大容量記憶装置である。特に、この発
明の主題は、ＨＤＤサブアセンブリにおける静電気の放
電（ＥＳＤ）の抑制である。FIELD OF THE INVENTION The field of the invention is the mass storage of hard disk drives (HDDs). In particular, the subject of the present invention is the suppression of electrostatic discharge (ESD) in HDD subassemblies.
【０００２】ＨＤＤにおける磁気抵抗性（ＭＲ）記録ト
ランスデューサおよび大型磁気抵抗性（ＧＭＲ）記録ト
ランスデューサの使用が既知である。ＭＲトランスデュ
ーサおよびＧＭＲトランスデューサの両方とも、約１０
０から２００Åの厚さの薄膜抵抗素子の一種である。こ
の少量の金属はジュール熱によって深刻な影響を受けか
ねない。小さな過渡電流は、これらのトランスデューサ
に損傷を与えうるだけでなく、実際にこれらのトランス
デューサを溶かし破壊し得る。トランスデューサの磁気
性質への損傷は実際の溶解よりもかなり前に生じる。い
ずれの種のトランスデューサも、約１ナノジュールのエ
ネルギとなる１ナノ秒当りわずか２０から３０ミリアン
ペアの過渡電流で十分に欠陥を生じる。[0002] The use of magneto-resistive (MR) and large magneto-resistive (GMR) recording transducers in HDDs is known. For both MR and GMR transducers, approximately 10
It is a kind of a thin film resistor having a thickness of 0 to 200 °. This small amount of metal can be severely affected by Joule heat. Small transients can not only damage these transducers, but can actually melt and destroy them. Damage to the magnetic properties of the transducer occurs well before actual dissolution. Both types of transducers are fully faulty with transient currents of only 20 to 30 milliamps per nanosecond resulting in about 1 nanojoule of energy.
【０００３】ヘッドスタックアセンブリ（ＨＳＡ）に搭
載されているＭＲトランスデューサは、もしもＨＳＡを
ＨＤＤのエレクトロニクスに結合している可撓性のコネ
クタの端部でＥＳＤ現象が起こると、損傷され信頼性を
失いかねない。ＨＳＡの組立中、この可撓性コネクタは
接地されておらず意図しない接触を受け得る。もし接地
されていない技術者または組立ラインの労働者がこれに
触れると、ＥＳＤ現象が生じるかもしれない。接地され
ていない人または金属の物体は、３００００ボルトもの
電圧の静電荷を容易に蓄積し得る。１０００ボルトを超
える電圧ならばトランスデューサに損傷を与えるだろう
から、可撓性コネクタを通じてのＥＳＤ放電を除去する
ためＥＳＤ対策が取られなければならないことは明らか
である。[0003] MR transducers mounted on a head stack assembly (HSA) are damaged and unreliable if an ESD event occurs at the end of the flexible connector coupling the HSA to the electronics of the HDD. Maybe. During assembly of the HSA, the flexible connector is ungrounded and may receive unintended contact. If an ungrounded technician or assembly line worker touches this, an ESD event may occur. An ungrounded person or metal object can easily accumulate a static charge of as much as 30,000 volts. It is clear that ESD measures must be taken to eliminate the ESD discharge through the flexible connector, since voltages above 1000 volts will damage the transducer.
【０００４】このようなＥＳＤ現象からＨＳＡを保護す
るための可能な方策の１つは、可撓性コネクタの入力／
出力リードをすべて合せて接地電位に短絡させることを
含む。この場合、ＥＳＤの過渡電流はすべて直接接地に
流れトランスデューサは影響を受けない。この解決策
は、偶発的なＥＳＤ現象に対する損傷しきい値を増加さ
せるが、短絡は試験の間および最終組立の前には取除か
なければならない。このため付加的なプロセスステップ
が加えられ、試験の間および最終組立の後にはトランス
デューサは保護されないことになる。[0004] One of the possible measures to protect the HSA from such an ESD phenomenon is the input / output of a flexible connector.
This involves shorting all output leads together to ground potential. In this case, all ESD transients flow directly to ground and the transducer is unaffected. This solution increases the damage threshold for accidental ESD events, but the short must be removed during testing and before final assembly. This adds an additional process step, and the transducer will not be protected during testing and after final assembly.
【０００５】トランスデューサをＥＳＤ過渡電流から保
護するためにトランスデューサ自体にかかるダイオード
を位置付けることが、トランスデューサの保護のための
もう１つの既知の方策である。しかし、ＭＲトランスデ
ューサにこのような構成要素を付加すると、トランスデ
ューサの複雑性が増しその性能に悪影響を及ぼしかねな
い。加えて、ダイオード自体もＥＳＤ現象によって損傷
を受けかねない。[0005] Positioning a diode on the transducer itself to protect the transducer from ESD transients is another known measure for transducer protection. However, the addition of such components to an MR transducer increases the complexity of the transducer and can adversely affect its performance. In addition, the diodes themselves can be damaged by the ESD phenomenon.
【０００６】ＨＳＡに不所望の複雑性を加えることな
く、組立、試験および動作の間にＨＳＡ内のＭＲ／ＧＭ
ＲトランスデューサをＥＳＤ過渡電流から保護できる、
方法または装置が所望であろう。[0006] Without adding undesired complexity to the HSA, the MR / GM in the HSA during assembly, testing and operation.
Protects the R transducer from ESD transients,
A method or apparatus would be desirable.
【０００７】[0007]
【発明の概要】この発明の好ましい一実施例において、
通常の状態では高い電気抵抗を示すが、ＥＳＤ現象の間
には低い電気抵抗に切換わる材料が可撓性コネクタのコ
ネクタ端付近上に位置付けられる。可撓性入力／出力リ
ードはすべてこの材料を通じて接地面に結合される。電
気抵抗特性の変化に対するしきい値電圧は約１００ボル
トである。ＥＳＤ過渡電流がこのしきい値電圧を超える
とき、材料が通電しＥＳＤ過渡電流を接地へと分岐させ
る。これによって、ＥＳＤ電流がＭＲトランスデューサ
およびＧＭＲトランスデューサに達することが防止さ
れ、トランスデューサが損傷から保護される。SUMMARY OF THE INVENTION In one preferred embodiment of the present invention,
Materials that exhibit a high electrical resistance under normal conditions, but switch to a lower electrical resistance during an ESD event, are located near the connector end of the flexible connector. All flexible input / output leads are coupled to the ground plane through this material. The threshold voltage for a change in the electrical resistance characteristic is about 100 volts. When the ESD transient exceeds this threshold voltage, the material conducts and diverts the ESD transient to ground. This prevents the ESD current from reaching the MR and GMR transducers and protects the transducer from damage.
【０００８】この材料は容易にとりつけられ取除く必要
がない。これによって、組立、試験の間の、そして実質
的に製品の有効寿命全体を通じての持続的なＥＳＤから
の保護が行なわれる。ＨＤＤ内の他のコネクタにもこの
材料を位置付けることで、さらにＥＳＤからの保護を行
なうことができる。This material is easily attached and does not need to be removed. This provides lasting protection from ESD during assembly and testing and substantially throughout the useful life of the product. By locating this material on other connectors in the HDD, further protection from ESD can be provided.
【０００９】図面を参照し、この発明の好ましい実施例
を以下に詳細に説明する。Preferred embodiments of the present invention will be described in detail below with reference to the drawings.
【００１０】[0010]
【詳細な説明】図１は、５つのアクチュエータアーム１
４上に装着される５つの読出／書込トランスデューサ１
２を含む既知のＨＳＡ１０を示す。コネクタ１８を備え
る可撓性ケーブル１６が、ＨＳＡアセンブリへのおよび
ＨＳＡアセンブリからの入力／出力データ経路およびア
ドレス経路を提供する。DETAILED DESCRIPTION FIG. 1 shows five actuator arms 1
5 read / write transducers 1 mounted on 4
2 shows a known HSA10 containing 2. Flexible cables 16 with connectors 18 provide input / output data paths and address paths to and from the HSA assembly.
【００１１】可撓性ケーブル１６およびコネクタ１８が
露出されていることから、電荷を蓄えた物体および人と
の偶発的な接触が容易に起こり得ることは明らかであ
る。１０００ボルトを超える電圧レベルの電荷を有する
人または物体がコネクタまたは可撓性ケーブルに接触す
ると、破壊的ＥＳＤ過渡電流がトランスデューサ１２へ
流れかねない。接地されていない人および金属の物体で
は電圧レベルは容易に５０００ボルトを超え得るので、
既知のＨＳＡにおいてはこのような過渡電流が頻発しト
ランスデューサへの損傷を引き起こす。It is clear from the fact that the flexible cable 16 and the connector 18 are exposed, accidental contact with charged objects and people can easily occur. When a person or object having a charge at a voltage level greater than 1000 volts contacts the connector or flexible cable, catastrophic ESD transients can flow to the transducer 12. For ungrounded people and metal objects the voltage level can easily exceed 5000 volts,
In the known HSA, such transients occur frequently and cause damage to the transducer.
【００１２】この発明の第１の実施例は、コネクタ１８
とケーブル１６との間の接合部に非線形電気抵抗特性を
持つ材料２１をとりつけることにより、こうした過渡電
流によるＨＳＡへの損傷の可能性を減じる。図２（Ａ）
および図２（Ｂ）は、それぞれ、接合部の上面図および
断面図を示す。入力／出力リード１７および接地リード
１９が材料２１の層を通じて結合される。通常動作条件
下では、材料２１は高い電気抵抗を有する。そのしきい
値電圧１００ボルトを超えると、材料２１は低電気抵抗
を示す。動作中、電荷を備えた人または物体との接触に
より引き起こされるＥＳＤ過渡電流現象は通常、材料２
１のしきい値電圧を超え、材料２１に小さな抵抗で電気
を通させ、これによって、材料２１を通じて接地線へと
過渡電流が流れることを可能にする。A first embodiment of the present invention is a connector 18
Attaching a material 21 having non-linear electrical resistance characteristics to the junction between the cable and the cable 16 reduces the likelihood of damage to the HSA due to such transients. FIG. 2 (A)
FIG. 2B and FIG. 2B show a top view and a cross-sectional view of the bonding portion, respectively. Input / output leads 17 and ground lead 19 are coupled through a layer of material 21. Under normal operating conditions, material 21 has a high electrical resistance. Above its threshold voltage of 100 volts, material 21 exhibits low electrical resistance. In operation, ESD transients caused by contact with a charged person or object typically involve material 2
A threshold voltage of 1 is exceeded and the material 21 conducts electricity with a small resistance, thereby allowing a transient current to flow through the material 21 to the ground line.
【００１３】非線形電気抵抗を備えるこのような材料の
一例が、Oryx Technologyが製造するＳＵＲＧＸであ
る。この材料は、しきい値電圧が１００ボルトであり導
電状態での電気抵抗は１０Ω以下である。One example of such a material with a non-linear electrical resistance is SURGX manufactured by Oryx Technology. This material has a threshold voltage of 100 volts and an electrical resistance in the conductive state of 10 Ω or less.
【００１４】ＥＳＤ過渡電流を分岐させるためにＳＵＲ
ＧＸまたは同様の材料を使用することは既に示唆されて
いるが、これまでの提案では、材料を読出／書込トラン
スデューサ自体に近接させて位置付けるよう求めてい
た。この位置付けでは、材料は所望の態様で機能できな
い。トランスデューサの電圧レベルがわずか３ボルト
で、トランスデューサの損傷または破壊が生じ得る。残
念ながら、ＳＵＲＧＸはそのしきい値電圧１００ボルト
にならないと自由に電気を通し始めない。これまでに提
案されている応用では所望の機能ができないことは明ら
かである。SUR for branching ESD transients
Although the use of GX or similar materials has already been suggested, previous proposals have required that the material be located in close proximity to the read / write transducer itself. In this position, the material cannot function in the desired manner. With only 3 volts of voltage on the transducer, damage or destruction of the transducer can occur. Unfortunately, SURGX cannot freely conduct electricity until its threshold voltage reaches 100 volts. It is clear that the applications proposed so far do not provide the desired function.
【００１５】これまで示唆されていた位置よりもトラン
スデューサからかなり離れたコネクタ／可撓性ケーブル
接合部に材料２１を位置付けることは、直感的には好ま
しくないように思われる。可撓性ケーブルを通じてＥＳ
Ｄが発生されることは知られていたが、この問題に対処
しようとする既知の試みは、アクチュエータアームへの
トランスデューサ自体の接続部に注目していた。これら
の材料２１が状態を変える電圧レベルは、損傷を与え得
る電圧レベルよりも高いので、この位置に材料２１を位
置付けてもトランスデューサは保護されないであろう。
事実、ＥＳＤの問題を解決しようとする既知の試みはす
べて、提案される解決策をトランスデューサヘッドの近
傍に位置付けている。この発明では、材料２１をコネク
タに移動させることで、材料の状態を変化させるために
必要な電圧レベルがかなり高いものの、材料２１がその
目的を果たすことを可能にしている。トランスデューサ
自体またはその支持アームに材料をとりつけると、これ
らの装置の重要な動作パラメータであるアームの共振お
よびトランスデューサの浮動高に影響を与えかねない
が、この発明は、トランスデューサ自体またはその支持
アームには全く材料が加えられないという付加的な利点
を有する。Positioning the material 21 at the connector / flexible cable junction farther away from the transducer than previously suggested would not seem intuitive. ES through flexible cable
Although it was known that D was generated, known attempts to address this problem focused on the connection of the transducer itself to the actuator arm. Since the voltage levels at which these materials 21 change state are higher than the voltage levels that can cause damage, positioning material 21 at this location will not protect the transducer.
In fact, all known attempts to solve the ESD problem have put proposed solutions close to the transducer head. In the present invention, moving material 21 to the connector allows material 21 to serve its purpose, although the voltage levels required to change the state of the material are quite high. The application of material to the transducer itself or its supporting arm can affect the important operating parameters of these devices, the arm resonance and the transducer's flying height, but the present invention provides for the transducer itself or its supporting arm. It has the additional advantage that no material is added.
【００１６】この発明で実験を行なうと、この発明で保
護されたトランスデューサのＥＳＤ故障レベルが１００
０ボルトから２０００ボルトへ上がることが示される。
組立または動作中のいずれの時点においても材料を取除
く必要がないため、トランスデューサの有効寿命全体を
通じてトランスデューサが保護される。Experiments with the present invention show that the transducer protected by the present invention has an ESD failure level of 100
It is shown to rise from 0 volts to 2000 volts.
Because the material does not need to be removed at any point during assembly or operation, the transducer is protected throughout its useful life.
【００１７】容易に想到されるこの発明の変形例は、Ｈ
ＤＤをホストコンピュータのアドレスおよびデータバス
に結合するコネクタおよびＨＤＤの内部にあるすべての
他のコネクタの上に材料２１を位置付けることを含む。
これらの付加的な位置に材料２１を位置付けることで、
接地へ連続して電流が分流されることになり、さまざま
なレベルでＥＳＤからの保護が行なわれる。A variant of the invention that is readily conceived is H
Including locating the material 21 on the connector coupling the DD to the address and data buses of the host computer and all other connectors internal to the HDD.
By positioning the material 21 at these additional locations,
Current will be continuously shunted to ground, providing various levels of ESD protection.
【図面の簡単な説明】[Brief description of the drawings]
【図１】可撓性ケーブルおよびコネクタを備えるＨＳＡ
（従来技術）の斜視図である。FIG. 1 HSA with flexible cable and connector
It is a perspective view of (prior art).
【図２】（Ａ）は、この発明の第１の実施例を組入れる
ＨＳＡ可撓性コネクタの上面図であり、（Ｂ）はこの発
明の第１の実施例を組入れるＨＳＡ可撓性コネクタの断
面図である。FIG. 2A is a top view of an HSA flexible connector incorporating the first embodiment of the present invention, and FIG. 2B is a top view of an HSA flexible connector incorporating the first embodiment of the present invention. It is sectional drawing.
１０ ヘッドスタックアセンブリ（ＨＳＡ） １２ 読出／書込トランスデューサ １４ アクチュエータアーム １６ 可撓性ケーブル １７ 入力／出力リード １８ コネクタ １９ 接地リード ２１ 材料 10 Head Stack Assembly (HSA) 12 Read / Write Transducer 14 Actuator Arm 16 Flexible Cable 17 Input / Output Lead 18 Connector 19 Ground Lead 21 Material
───────────────────────────────────────────────────── フロントページの続き (54)【発明の名称】 読出／書込トランスデュ―サを静電気の放電から保護するための方法、静電気の放電からの保護 を備えるヘッドスタックアセンブリ、および静電気の放電現象から装置を保護するためのシステ ム ────────────────────────────────────────────────── 54 Continued on front page (54) [Title of the Invention] Method for protecting read / write transducer from electrostatic discharge, head stack assembly with electrostatic discharge protection, and electrostatic discharge System to protect equipment from phenomena
Claims (5)
を搬送する電気管を通じて読出／書込回路に結合される
読出／書込トランスデューサを静電気の放電から保護す
るための方法であって、前記方法は、非線形電気抵抗特
性を備える材料を電気管上に位置付けるステップを含
み、前記材料は高抵抗の第１の状態と低抵抗の第２の状
態とを有し、静電気の放電は材料を第２の状態にし、そ
れによって材料は電気管から接地電位への低抵抗回路経
路を設け、トランスデューサから静電気の放電を分岐さ
せる、読出／書込トランスデューサを静電気の放電から
保護するための方法。1. A method for protecting a read / write transducer mounted on an arm and coupled to a read / write circuit via at least a data carrying electrical tube from electrostatic discharge, said method comprising: Positioning a material having a non-linear electrical resistance characteristic on the electrical tube, wherein the material has a first state of high resistance and a second state of low resistance, and the electrostatic discharge causes the material to reach a second state. A method for protecting a read / write transducer from electrostatic discharge, whereby the material provides a low resistance circuit path from the electrical tube to ground potential and shunts the electrostatic discharge from the transducer.
スタックアセンブリであって、 それぞれ複数の読出／書込アーム上に装着される複数の
読出／書込トランスデューサを含み、前記アームは互い
に積み重ねられ、前記ヘッドスタックアセンブリはさら
に、 各トランスデューサに結合される信号バスを含み、信号
バスは少なくとも第１の接地面を有し、信号バスはデー
タの書込のため各トランスデューサにデータを送ること
ができかつトランスデューサが読出ねばならないデータ
を送ることができ、前記ヘッドスタックアセンブリはさ
らに、 ヘッドスタックアセンブリを読出／書込エレクトロニク
スに結合するための少なくとも第１のコネクタを含み、
少なくとも第１のコネクタは信号バスに結合され、前記
ヘッドスタックアセンブリはさらに、 高抵抗の第１の状態および低抵抗の第２の状態の少なく
とも２つの電気抵抗状態を有する第１の材料を含み、第
１の材料は少なくとも第１のコネクタに隣接する信号バ
ス上に位置付けられ、材料は、静電気の放電が生じると
き、第１の状態から第２の状態へと変化し信号バスと接
地面との間に低抵抗電気経路を設ける、静電気の放電か
らの保護を備えるヘッドスタックアセンブリ。2. A head stack assembly with protection from electrostatic discharge, comprising: a plurality of read / write transducers each mounted on a plurality of read / write arms, said arms stacked on each other; The head stack assembly further includes a signal bus coupled to each transducer, the signal bus having at least a first ground plane, the signal bus being capable of sending data to each transducer for writing data, and A transducer capable of transmitting data that must be read, the head stack assembly further comprising at least a first connector for coupling the head stack assembly to read / write electronics;
At least a first connector is coupled to a signal bus, and the head stack assembly further includes a first material having at least two electrical resistance states, a first high resistance state and a second low resistance state. The first material is located on at least the signal bus adjacent to the first connector, and the material changes from the first state to the second state when an electrostatic discharge occurs, causing the signal bus to be in contact with the ground plane. A head stack assembly with protection from electrostatic discharge with a low resistance electrical path between them.
およびパワーバスに結合され、各信号およびパワーバス
は少なくとも１つの接地面と少なくとも１つのコネクタ
とを有し、第１の材料がそれぞれのコネクタの各々に隣
接するバス上に位置付けられ、バスそれぞれが静電気の
放電現象にさらされるとき第１の材料は各バスからその
接地面への低抵抗経路を設ける、請求項２に記載のヘッ
ドスタックアセンブリ。3. The head stack assembly is coupled to a plurality of signal and power buses, each signal and power bus having at least one ground plane and at least one connector, wherein a first material is in each of the respective connectors. 3. The head stack assembly according to claim 2, wherein the first material provides a low resistance path from each bus to its ground plane when each of the buses is exposed to an electrostatic discharge event.
回路を有する電気装置において、静電気の放電現象から
装置を保護するためのシステムであって、前記システム
は、非線形電気抵抗特性を備える材料を含み、材料は装
置と外部で発生される信号および外部で発生されるパワ
ーとの間の各電気接続上に位置付けられ、装置がこれら
の接続のいずれかにおいて静電気の放電を受けるとき、
材料は各接続から接地電位への低抵抗経路を設ける、静
電気の放電現象から装置を保護するためのシステム。4. An electric device having a circuit that can be damaged by an electrostatic discharge phenomenon, wherein the system includes a material having a non-linear electric resistance characteristic, the system comprising: The material is located on each electrical connection between the device and the externally generated signal and the externally generated power, and when the device experiences an electrostatic discharge on any of these connections,
The material provides a low resistance path from each connection to ground potential, a system to protect the device from electrostatic discharge phenomena.
ーサを有するハードディスクドライブであり、各トラン
スデューサはトランスデューサとハードディスクドライ
ブのエレクトロニクスとの間の電気接続間の接続上に位
置付けられる材料によって静電気の放電から保護され
る、請求項４に記載の静電気の放電現象から装置を保護
するためのシステム。5. The apparatus is a hard disk drive having a plurality of read / write transducers, each transducer being protected from electrostatic discharge by a material located on a connection between an electrical connection between the transducer and the electronics of the hard disk drive. The system for protecting a device from electrostatic discharge phenomena according to claim 4, which is protected.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9266598A | 1998-06-05 | 1998-06-05 | |
| US09/092665 | 1998-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000011337A true JP2000011337A (en) | 2000-01-14 |
Family
ID=22234435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11156111A Withdrawn JP2000011337A (en) | 1998-06-05 | 1999-06-03 | Method for protecting reading/writing transducer from discharge of static electricity, head stack assembly provided with protection from discharge of static electricity and system for protecting device from discharging phenomenon of static electricity |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000011337A (en) |
| DE (1) | DE19925697A1 (en) |
| GB (1) | GB2340988A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020072247A (en) * | 2001-03-09 | 2002-09-14 | 시게이트 테크놀로지 엘엘씨 | Magnetic transducer with integrated charge bleed resistor |
| US6995954B1 (en) * | 2001-07-13 | 2006-02-07 | Magnecomp Corporation | ESD protected suspension interconnect |
| KR100630718B1 (en) * | 2003-12-19 | 2006-10-02 | 삼성전자주식회사 | method and an interconnect and for dissipating electrostatic charges on a head sleder |
| US7489493B2 (en) | 2003-12-01 | 2009-02-10 | Magnecomp Corporation | Method to form electrostatic discharge protection on flexible circuits using a diamond-like carbon material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8303462D0 (en) * | 1983-02-08 | 1983-03-16 | Raychem Gmbh | Electrical stress control |
| NO167618C (en) * | 1989-03-20 | 1991-11-20 | Alcatel Stk As | SURVIVAL DEVICE FOR ELECTRICAL APPLIANCES. |
| US5210676A (en) * | 1991-03-13 | 1993-05-11 | Mashikian Matthew S | Electrical protective device |
| KR950012334A (en) * | 1993-10-29 | 1995-05-16 | 윌리엄 티. 엘리스 | How to protect the magnetoresistive head assembly and magnetoresistive head from electrostatic discharge |
| US5748412A (en) * | 1995-08-11 | 1998-05-05 | Seagate Technology, Inc. | Method and apparatus for protecting magnetoresistive sensor element from electrostatic discharge |
| GB9600819D0 (en) * | 1996-01-16 | 1996-03-20 | Raychem Gmbh | Electrical stress control |
-
1999
- 1999-06-03 JP JP11156111A patent/JP2000011337A/en not_active Withdrawn
- 1999-06-03 GB GB9912902A patent/GB2340988A/en not_active Withdrawn
- 1999-06-04 DE DE1999125697 patent/DE19925697A1/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020072247A (en) * | 2001-03-09 | 2002-09-14 | 시게이트 테크놀로지 엘엘씨 | Magnetic transducer with integrated charge bleed resistor |
| US6995954B1 (en) * | 2001-07-13 | 2006-02-07 | Magnecomp Corporation | ESD protected suspension interconnect |
| US7489493B2 (en) | 2003-12-01 | 2009-02-10 | Magnecomp Corporation | Method to form electrostatic discharge protection on flexible circuits using a diamond-like carbon material |
| KR100630718B1 (en) * | 2003-12-19 | 2006-10-02 | 삼성전자주식회사 | method and an interconnect and for dissipating electrostatic charges on a head sleder |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9912902D0 (en) | 1999-08-04 |
| DE19925697A1 (en) | 2000-02-10 |
| GB2340988A (en) | 2000-03-01 |
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