JP2000009672A - Gas sensor of contact combustion type - Google Patents
Gas sensor of contact combustion typeInfo
- Publication number
- JP2000009672A JP2000009672A JP10180879A JP18087998A JP2000009672A JP 2000009672 A JP2000009672 A JP 2000009672A JP 10180879 A JP10180879 A JP 10180879A JP 18087998 A JP18087998 A JP 18087998A JP 2000009672 A JP2000009672 A JP 2000009672A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation catalyst
- heater
- gas sensor
- carrier layer
- combustion type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、接触燃焼式ガスセ
ンサ技術に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a catalytic combustion type gas sensor technology.
【０００２】[0002]
【従来の技術】接触燃焼式ガスセンサは酸化触媒を担持
した担体上での可燃性ガスの酸化反応による発熱を検出
するガスセンサであり、通常、温度等の環境変化の影響
を排除するために、このような担体を酸化触媒層として
有する検出素子と、検出素子における酸化触媒層と同様
の熱挙動を有しながらも酸化触媒性を有しない補償層を
有する補償素子、及び抵抗値既知の電気抵抗を用いてホ
ィートストンブリッジ回路を形成させて用いる。2. Description of the Related Art A catalytic combustion type gas sensor is a gas sensor which detects heat generated by an oxidation reaction of a combustible gas on a carrier carrying an oxidation catalyst. Usually, the gas sensor is used to eliminate the influence of environmental changes such as temperature. A detection element having such a carrier as an oxidation catalyst layer, a compensation element having a compensation layer having the same thermal behavior as the oxidation catalyst layer in the detection element but having no oxidation catalyst, and an electric resistance having a known resistance value. To form and use a Wheatstone bridge circuit.
【０００３】なお、このような接触燃焼式ガスセンサは
酸化反応の反応熱を鋭敏に検出するため、及び、検出素
子を接触反応に適した温度に保つヒータの消費電力を減
少させて電池駆動を可能とするため、検出・補償素子付
近からの熱伝導による損失が小さいことが望まれる。こ
こでこのような検出素子付近の熱容量を小さくするため
特開平８−９４５６１号公報記載の技術では、センサ素
子を空洞上にマイクロマシーニング技術を用いて懸垂部
として形成した酸化シリコン絶縁層に検出素子を構成す
ることが提案されている（図３参照）。シリコン基板上
に酸化絶縁膜を形成し、その上に白金などの金属抵抗体
を用いて形成したヒータ、さらにその上にパラジウム等
の酸化触媒を担持させたアルミナなどの触媒担体による
触媒層を形成し、これらからセンサ素子が構成される。[0003] Such a catalytic combustion type gas sensor can detect the reaction heat of the oxidation reaction sharply and reduce the power consumption of a heater for keeping the detection element at a temperature suitable for the contact reaction. Therefore, it is desired that loss due to heat conduction from the vicinity of the detection / compensation element is small. Here, in order to reduce the heat capacity in the vicinity of such a detecting element, in the technique described in Japanese Patent Application Laid-Open No. Hei 8-94561, a sensor element is formed on a silicon oxide insulating layer formed as a suspension using a micromachining technique on a cavity. It has been proposed to construct an element (see FIG. 3). An oxide insulating film is formed on a silicon substrate, and a heater formed using a metal resistor such as platinum is formed on the oxide insulating film, and a catalyst layer is formed on the catalyst carrier such as alumina on which an oxidation catalyst such as palladium is carried. Then, a sensor element is configured from these.
【０００４】このようなセンサは低消費電力であって電
池駆動が可能であり、かつ、応答性に優れると云った利
点の他に、半導体製造技術によって小型化及び量産が容
易である。さらに、信号処理回路を集積化あるいはハイ
ブリット化することも可能である。しかしながら、電池
交換の煩雑さを回避するために更なる低消費電力化が求
められ、また、そのために間歇駆動を行おうとすると上
記センサではヒータと酸化シリコン絶縁層との間、ある
いは触媒層と酸化シリコン絶縁層との間に剥離が生じて
センサとして用いることができなくなると云う障害が多
発した。[0004] Such a sensor has low power consumption, can be driven by a battery, and has excellent responsiveness, and can be easily miniaturized and mass-produced by a semiconductor manufacturing technique. Further, the signal processing circuit can be integrated or hybridized. However, further reduction in power consumption is required in order to avoid the complexity of battery replacement, and if an attempt is made to perform intermittent driving for this purpose, the above-described sensor requires the sensor to be connected between the heater and the silicon oxide insulating layer or the catalyst layer to be oxidized. Many failures have occurred, such as separation between the silicon insulating layer and the sensor being unable to be used as a sensor.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記した従
来の問題点を改善する、すなわち、感度が良好で、消費
電力が小さく、また、間歇運転を行っても耐久性・信頼
性が高い優れた接触燃焼式ガスセンサを提供することを
目的とする。The present invention solves the above-mentioned conventional problems, that is, it has good sensitivity, low power consumption, and high durability and reliability even when intermittent operation is performed. An object of the present invention is to provide an excellent contact combustion type gas sensor.
【０００６】[0006]
【課題を解決するための手段】本発明の接触燃焼式ガス
センサは上記課題を解決するため、請求項１に記載の通
り、２層の酸化触媒担持担体層の間に平面状ヒータが配
されてなる検知素子を有する接触燃焼式ガスセンサであ
る。According to a first aspect of the present invention, there is provided a catalytic combustion type gas sensor comprising a flat heater disposed between two oxidation catalyst supporting carrier layers. Is a contact combustion type gas sensor having a detection element.
【０００７】[0007]
【発明の実施の形態】本発明の接触燃焼式ガスセンサの
検知素子において、上記のように２層の酸化触媒担持担
体層の間に平面状ヒータが配されてなる構成を有するこ
とが必要である。このようないわばサンドイッチ構造に
より層間の剥離が著しく減少する。さらに、このとき酸
化触媒担持担体層同士が直接積層される箇所があると、
層間の剥離が事実上なくなる。本発明の構成により、酸
化シリコン等からなる基板上に検知素子を密着して形成
する必要がなくなる。このとき、これら２層の酸化触媒
担持担体層の平面状ヒータが配されていない面は共に被
検ガスに直接接触することができ、さらにこのとき基板
等への熱伝導による熱損失が低減して感度が向上し、ま
た、同時に消費電力が低減可能となる。なお、本発明に
おける平面状ヒータとは、平面状の発熱部を有するヒー
タ以外に、線状体からなるヒータであってその発熱部の
少なくとも一部が「己」字を連ねた形状あるいは渦巻き
形状を構成するなど、実質的に平面状になっているヒー
タであっても良い。このとき、平面状ヒータが配された
箇所でも酸化触媒担持担体層同士が直接積層される箇所
ができて、効果的に層間剥離が防止される。なお、この
平面状ヒータは例えば、白金をスパッタし、フォトリソ
工程を経てドライエッチングすることによって容易に形
成することができる。本発明の接触燃焼式ガスセンサに
おける酸化触媒担持担体層とは、パラジウム、白金など
の大気中の可燃ガスを接触反応によって酸化させる酸化
触媒が担持されたアルミナ、酸化シリコンなどの担体か
らなる層を云う。このような酸化触媒担持担体層は酸化
触媒、アルミナ、水あるいは必要に応じて有機溶媒など
を混練して作成したペーストを塗布した後焼成しても、
あるいは、蒸着等の真空製膜技術を応用しても形成する
ことができる。BEST MODE FOR CARRYING OUT THE INVENTION In the sensing element of the catalytic combustion type gas sensor of the present invention, it is necessary to have a configuration in which a planar heater is disposed between two oxidation catalyst supporting carrier layers as described above. . Such a so-called sandwich structure significantly reduces delamination between layers. Further, at this time, if there is a portion where the oxidation catalyst supporting carrier layers are directly laminated,
Delamination between layers is virtually eliminated. According to the structure of the present invention, it is not necessary to form a sensing element in close contact with a substrate made of silicon oxide or the like. At this time, both surfaces of the two oxidation catalyst-carrying carrier layers on which the planar heater is not disposed can directly contact the test gas, and at this time, heat loss due to heat conduction to the substrate and the like is reduced. And the sensitivity is improved, and at the same time, the power consumption can be reduced. In addition, the planar heater in the present invention is a heater formed of a linear body in addition to a heater having a planar heat generating portion, and at least a part of the heat generating portion has a shape of a series of "self" or a spiral shape. Or a substantially planar heater. At this time, even at the place where the planar heater is arranged, there is a place where the oxidation catalyst supporting carrier layers are directly laminated, and delamination is effectively prevented. The flat heater can be easily formed by, for example, sputtering platinum and dry-etching through a photolithography process. The oxidation catalyst-carrying carrier layer in the catalytic combustion type gas sensor of the present invention refers to a layer made of a carrier such as alumina or silicon oxide carrying an oxidation catalyst for oxidizing a combustible gas in the atmosphere such as palladium or platinum by a contact reaction. . Such an oxidation catalyst-carrying carrier layer may be baked after applying a paste prepared by kneading an oxidation catalyst, alumina, water or an organic solvent as necessary,
Alternatively, it can also be formed by applying a vacuum film forming technique such as vapor deposition.
【０００８】本発明の接触燃焼式ガスセンサにおいて、
その検知素子がシリコン基板に設けられた空洞上に形成
されていると集積化及びハイブリット化が容易となる。
一方、検知素子同様にシリコン基板に設けられた空洞上
に補償素子を配することにより、検知素子と同等の環境
とすることができ、より完全な補償が可能となる。な
お、この補償素子はその目的から、酸化触媒が担持され
ていない以外検知素子と同様の構成を有するものである
ことが望ましい。In the catalytic combustion type gas sensor of the present invention,
If the sensing element is formed on a cavity provided in a silicon substrate, integration and hybridization are facilitated.
On the other hand, by arranging the compensating element on the cavity provided in the silicon substrate as in the case of the detecting element, an environment equivalent to that of the detecting element can be obtained, and more complete compensation becomes possible. For this purpose, it is desirable that the compensating element has the same configuration as the detecting element except that no oxidation catalyst is supported.
【０００９】[0009]
【実施例】以下に本発明の接触燃焼式ガスセンサについ
て例を示して具体的に説明する。図１（ａ）に本発明に
係るガスセンサαの斜視図、図２にその上面図（部分
図）を示す。これらの図において、符号１を付して検知
素子が示され、符号２を付して補償素子が示されてい
る。検知素子１は、アルミナからなる担体層３の酸化触
媒であるパラジウムを担持した部分（「酸化触媒担持
部」とも云う）３ａ、その上に設けられた平面状のヒー
タ１ａ、さらにヒータ１ａを完全に覆うように設けられ
たパラジウムを担持したアルミナからなる担体層１ｂ
（「酸化触媒担持担体層」とも云う）とから構成されて
いる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The catalytic combustion type gas sensor of the present invention will be specifically described below with reference to examples. FIG. 1A is a perspective view of a gas sensor α according to the present invention, and FIG. 2 is a top view (partial view) thereof. In these drawings, reference numeral 1 denotes a sensing element, and reference numeral 2 denotes a compensation element. The sensing element 1 is composed of a portion (also referred to as an “oxidation catalyst supporting portion”) 3 a supporting palladium, which is an oxidation catalyst of a carrier layer 3 made of alumina, a flat heater 1 a provided thereon, and a heater 1 a completely. Layer 1b made of alumina carrying palladium provided so as to cover the surface
(Also referred to as an “oxidation catalyst supporting carrier layer”).
【００１０】また、補償素子２は担体層３の触媒を有し
ない部分（「触媒非担持部」とも云う）３ｂ、その上に
設けられた平面状のヒータ２ａ、さらにヒータ２ａを完
全に覆うように設けられたアルミナからなる触媒を有し
ない担体層２ｂ（「触媒非担持担体層」とも云う）とか
ら構成されている。これら検知素子１及び補償素子２の
ヒータ１ａ及び２ａの両端部にはそれぞれ１対の接点部
１ｃ及び２ｃが設けられている。これら接点部はそれぞ
れリード線４を介して２組のピン５に接続されている。
なお、上記担体層３は酸化シリコンからなる絶縁層６を
介してシリコン基板７上に設けられていて、このシリコ
ン基板７はセンサ台座８に固定されている。なお前述の
ピン５はこの台座８の裏面まで連続してかつ突出してい
て、ソケットと嵌合して共にホイートストンブリッジを
構成する電気回路への接続に供せられている。The compensating element 2 completely covers the portion 3b of the carrier layer 3 having no catalyst (also referred to as "catalyst non-supporting portion"), the planar heater 2a provided thereon, and the heater 2a. And a carrier layer 2b (also referred to as a "catalyst-unsupported carrier layer") having no catalyst, which is provided on the substrate. A pair of contact portions 1c and 2c are provided at both ends of the heaters 1a and 2a of the sensing element 1 and the compensating element 2, respectively. These contact portions are respectively connected to two sets of pins 5 via lead wires 4.
The carrier layer 3 is provided on a silicon substrate 7 via an insulating layer 6 made of silicon oxide, and the silicon substrate 7 is fixed to a sensor base 8. The above-mentioned pin 5 is continuously and protruded to the rear surface of the pedestal 8, and is provided for connection to an electric circuit forming a Wheatstone bridge together with a socket.
【００１１】絶縁層６、シリコン基板７、台座８には空
洞９が設けられていて（図１（ｂ）にシリコン基板７よ
り上の部分を示し、かつ、絶縁層６及びシリコン基板７
における空洞９の部分を破線で示してある）、空洞９上
に上記検知素子及び補償素子が位置し、それぞれの素子
の担体層３の裏面側（図示されていない）も、担体層１
あるいは担体層２の表面（図における上面）同様に被検
ガスと接触するようになっている。いわばブリッジ構造
を有するこのようなガスセンサαの感度は極めて良好な
ものとなっていて、応答性も良好で、またヒータ１ａ及
び２ａの消費電力は小さいものとなっている。A cavity 9 is provided in the insulating layer 6, the silicon substrate 7, and the base 8 (FIG. 1B shows a portion above the silicon substrate 7, and the insulating layer 6, the silicon substrate 7
Are indicated by broken lines), the sensing element and the compensating element are located on the cavity 9, and the back side (not shown) of the carrier layer 3 of each element is also attached to the carrier layer 1.
Alternatively, it comes into contact with the test gas similarly to the surface of the carrier layer 2 (the upper surface in the figure). The gas sensor α having a bridge structure has a very good sensitivity, a good response, and a small power consumption of the heaters 1a and 2a.
【００１２】このようなセンサは例えば次のようにして
得ることができる。シリコン基板を熱酸化炉にて酸化し
てその表面に酸化シリコン層（５０００Å）を形成す
る。両面に形成された酸化シリコン層の内、裏面（素子
を形成しない面）の酸化シリコン膜を所定のパターンに
エッチングした。次いで、このシリコン基板の１面にア
ルミナとパラジウムを蒸着し、検知素子を構成する部分
に酸化触媒担持担体層（厚さ：１００００Å）と、補償
素子を構成する部分にアルミナのみを蒸着して触媒非担
持担体層（厚さ：１００００Å）とを形成した。上記２
種の担体層のそれぞれに白金からなる平面状のヒータ
（厚さ：２５００Å）及び接点部をスパッタによって形
成した。なお、この例では平面状のヒータは線状の白金
線が「己」字を連ねてなる形状で形成されているため、
このヒータが配された箇所においても酸化触媒担持担体
層同士、あるいは、触媒非担持担体層同士が密着しその
結果、層間の剥離が防止される。Such a sensor can be obtained, for example, as follows. The silicon substrate is oxidized in a thermal oxidation furnace to form a silicon oxide layer (5000 °) on its surface. Of the silicon oxide layers formed on both surfaces, the silicon oxide film on the back surface (the surface on which no element was formed) was etched into a predetermined pattern. Next, alumina and palladium are vapor-deposited on one surface of the silicon substrate, an oxidation catalyst-carrying carrier layer (thickness: 10000 °) is formed on a portion constituting the sensing element, and only alumina is vapor-deposited on a portion constituting the compensating element. An unsupported carrier layer (thickness: 10000 °) was formed. 2 above
A planar heater (thickness: 2500 °) made of platinum and a contact portion were formed on each of the seed carrier layers by sputtering. Note that, in this example, the flat heater is formed in a shape in which a linear platinum wire is formed by connecting a “self” character.
Even at the location where the heater is provided, the oxidation catalyst supporting carrier layers or the catalyst non-supporting carrier layers adhere to each other, so that separation between the layers is prevented.
【００１３】さらにこれらヒータを完全に覆うようにし
て、検知素子形成部にパラジウム及びアルミナを、補償
素子形成部にアルミナのみを蒸着して、それぞれ厚さ５
０００Åの酸化触媒担持担体層及び触媒非担持担体層を
作成し、それぞれ検知素子及び補償素子を形成した。な
お、このとき作成された酸化触媒担持担体層及び触媒非
担持担体層は共に上述の平面状のヒータより面積が大き
く、そのため、酸化触媒担持担体層同士、あるいは、触
媒非担持担体層同士が密着する部分があって、その結果
これら層間の剥離が効果的に防止される。Further, palladium and alumina are vapor-deposited on the sensing element forming portion and only alumina is vapor-deposited on the compensating element forming portion so as to completely cover these heaters.
An oxidation catalyst-carrying support layer and a non-catalyst-carrying support layer of 2,000 mm were formed, and a detection element and a compensation element were formed, respectively. Note that both the oxidation catalyst-carrying carrier layer and the catalyst non-carrying carrier layer formed at this time have a larger area than the above-mentioned flat heater, so that the oxidation catalyst-carrying carrier layers or the catalyst non-carrying carrier layers adhere to each other. There is a portion which is peeled off, and as a result, separation between these layers is effectively prevented.
【００１４】次いで、これら検知素子及び補償素子の裏
面に当たる部分のシリコン基板を異方エッチングにより
除去し、次いで、このエッチングにより露出した部分の
酸化シリコン層をドライエッチャーにより裏面からエッ
チングし担体層を露出させた。その後、このセンサ本体
部を台座に接着し、さらに台座に付属する電気接続用ピ
ンと各素子のヒータの端子部とをリード線を用いて接続
して図１及び図２に示したガスセンサαを得た。このよ
うな２層の酸化触媒担持担体層の間に平面状ヒータが配
されてなる検知素子を有する接触燃焼式ガスセンサは感
度も高く、耐久性に優れたものである。Next, the silicon substrate at the portion corresponding to the back surface of the sensing element and the compensation element is removed by anisotropic etching, and the silicon oxide layer at the portion exposed by this etching is etched from the back surface by a dry etcher to expose the carrier layer. I let it. Thereafter, the sensor main body is adhered to the pedestal, and the electrical connection pins attached to the pedestal and the terminals of the heaters of the respective elements are connected to each other using lead wires to obtain the gas sensor α shown in FIGS. Was. Such a catalytic combustion type gas sensor having a detection element in which a planar heater is disposed between two oxidation catalyst supporting carrier layers has high sensitivity and excellent durability.
【００１５】[0015]
【発明の効果】本発明の接触燃焼式ガスセンサは、耐久
性・経時安定性及び信頼性が高い、感度の良好な優れた
接触燃焼式ガスセンサである。The catalytic combustion type gas sensor of the present invention is an excellent catalytic combustion type gas sensor having high durability, stability over time, and high reliability and good sensitivity.
【図１】（ａ）本発明に係る接触燃焼式ガスセンサの一
例αを示す斜視図である。 （ｂ）絶縁層及びシリコン基板に設けられた空洞を示す
ための部分透視図である。FIG. 1A is a perspective view showing an example α of a catalytic combustion type gas sensor according to the present invention. FIG. 3B is a partial perspective view showing a cavity provided in the insulating layer and the silicon substrate.
【図２】図１のガスセンサαの上面図（部分図）であ
る。FIG. 2 is a top view (partial view) of the gas sensor α of FIG.
【図３】従来技術に係る接触燃焼式ガスセンサを示す図
である。FIG. 3 is a diagram showing a catalytic combustion type gas sensor according to the related art.
α 本発明に係るガスセンサ １ 検知素子 １ａ ヒータ １ｂ 酸化触媒担持担体層 １ｃ 接点部 ２ 補償素子 ２ａ ヒータ ２ｂ 触媒非担持担体層 ２ｃ 接点部 ３ 担体層 ３ａ 酸化触媒担持部 ３ｂ 触媒非担持部 ４ リード線 ５ ピン ６ 絶縁層 ７ シリコン基板 ８ センサ台座 ９ 空洞 α Gas sensor according to the present invention 1 Sensing element 1a Heater 1b Oxidation catalyst supporting carrier layer 1c Contact part 2 Compensating element 2a Heater 2b Catalyst non-supporting carrier layer 2c Contact part 3 Carrier layer 3a Oxidation catalyst supporting part 3b Catalyst non-supporting part 4 Lead wire 5 pins 6 insulating layer 7 silicon substrate 8 sensor pedestal 9 cavity
Claims (3)
ヒータが配されてなる検知素子を有することを特徴とす
る接触燃焼式ガスセンサ。1. A catalytic combustion type gas sensor comprising a detection element having a planar heater disposed between two oxidation catalyst supporting carrier layers.
検知素子を有することを特徴とする請求項１に記載の接
触燃焼式ガスセンサ。2. The catalytic combustion type gas sensor according to claim 1, wherein the sensing element is provided on a cavity provided in a silicon substrate.
素子を有することを特徴とする請求項２に記載の接触燃
焼式ガスセンサ。3. The catalytic combustion type gas sensor according to claim 2, wherein a compensation element is provided on a cavity provided in the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10180879A JP2000009672A (en) | 1998-06-26 | 1998-06-26 | Gas sensor of contact combustion type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10180879A JP2000009672A (en) | 1998-06-26 | 1998-06-26 | Gas sensor of contact combustion type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000009672A true JP2000009672A (en) | 2000-01-14 |
Family
ID=16090942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10180879A Withdrawn JP2000009672A (en) | 1998-06-26 | 1998-06-26 | Gas sensor of contact combustion type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000009672A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009008258A1 (en) * | 2007-07-09 | 2009-01-15 | Murata Manufacturing Co., Ltd. | Sensor device and method for manufacturing the same |
| KR101128359B1 (en) * | 2003-06-12 | 2012-03-23 | 리켄 게이키 가부시키가이샤 | Catalytic combustion type gas sensor and method for manufacture thereof |
| JP2012145597A (en) * | 2012-05-07 | 2012-08-02 | Citizen Holdings Co Ltd | Contact combustion type gas sensor |
| JP2016061593A (en) * | 2014-09-16 | 2016-04-25 | ヤマハファインテック株式会社 | Catalytic combustion type gas sensor |
| CN114324481A (en) * | 2021-12-27 | 2022-04-12 | 浙江工业大学 | Catalytic combustion type hydrogen sensor and preparation method thereof |
| GB2604041A (en) * | 2021-02-22 | 2022-08-24 | Draeger Safety Ag & Co Kgaa | Gas detection device with a detector and with a compensator and gas detection process with such a gas detection device |
-
1998
- 1998-06-26 JP JP10180879A patent/JP2000009672A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101128359B1 (en) * | 2003-06-12 | 2012-03-23 | 리켄 게이키 가부시키가이샤 | Catalytic combustion type gas sensor and method for manufacture thereof |
| WO2009008258A1 (en) * | 2007-07-09 | 2009-01-15 | Murata Manufacturing Co., Ltd. | Sensor device and method for manufacturing the same |
| JP2012145597A (en) * | 2012-05-07 | 2012-08-02 | Citizen Holdings Co Ltd | Contact combustion type gas sensor |
| JP2016061593A (en) * | 2014-09-16 | 2016-04-25 | ヤマハファインテック株式会社 | Catalytic combustion type gas sensor |
| GB2604041A (en) * | 2021-02-22 | 2022-08-24 | Draeger Safety Ag & Co Kgaa | Gas detection device with a detector and with a compensator and gas detection process with such a gas detection device |
| GB2604041B (en) * | 2021-02-22 | 2023-02-22 | Draeger Safety Ag & Co Kgaa | Gas detection device with a detector and with a compensator and gas detection process with such a gas detection device |
| CN114324481A (en) * | 2021-12-27 | 2022-04-12 | 浙江工业大学 | Catalytic combustion type hydrogen sensor and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20050906 |