JP2000003507A - Tunnel magnetoresistive laminated film and tunnel magnetoresistive element as well as magnetic recording and reproducing device using the same - Google Patents
Tunnel magnetoresistive laminated film and tunnel magnetoresistive element as well as magnetic recording and reproducing device using the sameInfo
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- JP2000003507A JP2000003507A JP16658198A JP16658198A JP2000003507A JP 2000003507 A JP2000003507 A JP 2000003507A JP 16658198 A JP16658198 A JP 16658198A JP 16658198 A JP16658198 A JP 16658198A JP 2000003507 A JP2000003507 A JP 2000003507A
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- film
- magnetic
- tunnel
- magnetoresistive element
- reproducing apparatus
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気記録再生装置
に関し、特に高記録密度磁気記録再生装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording and reproducing apparatus, and more particularly to a high recording density magnetic recording and reproducing apparatus.
【０００２】[0002]
【従来の技術】特開平4−103014 号公報には、反強磁性
体を用いた強磁性トンネル効果膜およびこれを用いた磁
気抵抗効果素子の記述がある。特開平9−128714 号公報
には、強磁性層の膜厚を膜面内で変えた構造の磁気トラ
ンスデユーサーの記述がある。2. Description of the Related Art Japanese Patent Application Laid-Open No. 4-103014 describes a ferromagnetic tunnel effect film using an antiferromagnetic material and a magnetoresistance effect element using the same. Japanese Patent Application Laid-Open No. 9-128714 describes a magnetic transducer having a structure in which the thickness of a ferromagnetic layer is changed in a film plane.
【０００３】[0003]
【発明が解決しようとする課題】従来の技術では記録密
度の上昇に対応し、微細な記録からの微弱な磁気信号を
十分高い感度と出力で再生するような磁気記録再生装置
の再生用素子として磁気抵抗効果を用いた素子で対応し
ているが、現状はさらなる微細化に伴う再生感度および
出力の低下，ノイズの低減の問題解決した記憶装置が技
術的に必要とされている。In the prior art, as a reproducing element of a magnetic recording / reproducing apparatus which responds to an increase in recording density and reproduces a weak magnetic signal from fine recording with sufficiently high sensitivity and output. Although an element using the magnetoresistive effect is used, at present, there is a need in the art for a storage device that solves the problems of reduced reproduction sensitivity and output and reduced noise due to further miniaturization.
【０００４】近年、強磁性金属の膜を非常に薄い絶縁層
を介して積層し、膜厚方向に電流を流した際に観察され
るトンネル電流に大きな磁気抵抗効果が生じることが知
られている。この場合、従来知られている磁気抵抗効
果，巨大磁気抵抗効果素子が膜面方向に電流を流し、外
部磁界の方向によって抵抗が変化する減少を出力として
測定しているのに対し、トンネル磁気抵抗効果膜では膜
厚方向に電流を流す構造であり、従来とは異なるヘッド
構造をとる必要がある。In recent years, it has been known that a large magnetoresistance effect occurs in a tunnel current observed when a ferromagnetic metal film is laminated via an extremely thin insulating layer and a current flows in the thickness direction. . In this case, while a conventionally known magneto-resistive effect or giant magneto-resistive element causes a current to flow in the direction of the film surface and measures the decrease in the resistance that changes depending on the direction of the external magnetic field as an output, the tunnel magneto-resistive effect is used. The effect film has a structure in which a current flows in the film thickness direction, and it is necessary to adopt a head structure different from the conventional structure.
【０００５】一方、磁気構造的にはこのトンネル型磁気
抵抗効果素子は従来開発されているスピンバルブという
構造と類似し、中間層をはさんで２層に分離した磁性膜
を有しており、その磁気的な制御の必要性はスピンバル
ブ構造と同様に重要なものとなる。その上、トンネル型
磁気抵抗効果素子は電流の漏洩や絶縁破壊を制御するこ
とが必要である。従って、トンネル型磁気抵抗効果素子
の磁気的な特性である固定層の磁化の固定と自由層の磁
化回転の規定、及び、自由層の磁区発生の制御は問題で
ある。従来の磁気抵抗効果膜では、例えばハードバイア
スという機構のように磁区制御のための硬質磁性膜を磁
気抵抗効果膜の両端に配置した構造が用いられていた。
トンネル型磁気抵抗効果素子では電流がリークするの
で、この構造ではトンネル型磁気抵抗効果膜に電流を印
加するのが困難である。さらに従来磁気抵抗効果膜に電
流を印加するための一対の電極を磁気ギャップ内に横並
びに形成していたが、トンネル型磁気抵抗効果膜では電
極を厚さ方向に形成することが必要であり、作製上困難
である。また、トラック幅を決定する要因として実際の
膜の大きさが用いられている。On the other hand, in terms of magnetic structure, this tunnel type magnetoresistive effect element is similar to a conventionally developed structure of a spin valve, and has a magnetic film separated into two layers with an intermediate layer interposed therebetween. The necessity of the magnetic control becomes as important as the spin valve structure. In addition, it is necessary for the tunnel type magnetoresistive element to control current leakage and dielectric breakdown. Therefore, there are problems in fixing the magnetization of the fixed layer, defining the magnetization rotation of the free layer, and controlling the generation of magnetic domains in the free layer, which are the magnetic characteristics of the tunnel magnetoresistive element. In a conventional magnetoresistive film, a structure in which hard magnetic films for controlling magnetic domains are disposed at both ends of the magnetoresistive film, such as a mechanism called hard bias, has been used.
Since the current leaks in the tunnel type magneto-resistance effect element, it is difficult to apply the current to the tunnel type magneto-resistance effect film in this structure. Further, a pair of electrodes for applying a current to the magnetoresistive film is conventionally formed side by side in the magnetic gap. However, in the tunnel type magnetoresistive film, the electrodes need to be formed in the thickness direction. Difficult to fabricate. The actual film size is used as a factor for determining the track width.
【０００６】また、トンネル型磁気抵抗効果素子は、活
性領域が極薄の絶縁膜を介した磁性膜サンドイッチ構造
の厚さ方向に電流が流れるため、この部分が磁気ヘッド
の対向面すなわち記録媒体に近接する面に露出した場合
に、記録媒体への近接あるいは接触で電流が短絡する恐
れがある。同時に対向面を加工することはこのために困
難になっている。In a tunnel type magnetoresistive element, an electric current flows in the thickness direction of a magnetic film sandwich structure with an extremely thin active region via an insulating film. When exposed to an adjacent surface, current may be short-circuited by approaching or contacting the recording medium. At the same time, it is difficult to machine the facing surface.
【０００７】また、電極の構造についても、高密度記録
の実現に伴って素子サイズは微細化し、それに伴って素
子自体の電気抵抗が小さくなり、出力が小さくなる問題
がある。[0007] Also, regarding the structure of the electrodes, there is a problem in that the element size becomes finer with the realization of high-density recording, and the electric resistance of the element itself decreases with the accompanying reduction in output.
【０００８】従って、本発明の目的は、高密度記録に対
応したトンネル型磁気抵抗効果磁気ヘッドと、これを用
いた磁気記録装置を提供することにあり、具体的には、
上述した微細化に伴う再生感度および出力の低下，ノイ
ズの低減，電流短絡などの問題を解決した構造をもった
記憶装置を提供することにある。Accordingly, it is an object of the present invention to provide a tunnel type magnetoresistive magnetic head compatible with high-density recording and a magnetic recording apparatus using the same.
It is an object of the present invention to provide a storage device having a structure that solves the above-described problems such as a reduction in reproduction sensitivity and output, a reduction in noise, and a short circuit in current due to miniaturization.
【０００９】[0009]
【課題を解決するための手段】第一に、対向面における
トンネル型磁気抵抗積層膜の短絡を防ぐため、トンネル
型磁気抵抗積層膜の絶縁性バリヤ膜の周辺部の膜厚を厚
くする、あるいは絶縁性の高くなる処理を施すことで、
周辺部の絶縁性を高くし、素子の対向面における自由側
磁性膜と固定側磁性膜の間の短絡を防ぐ構造をとる。か
つ、磁気的に他のプロセスの影響の及ばない領域で磁気
信号を扱うことができるため、ノイズの低減などに有効
と考えられる。First, in order to prevent a short circuit of the tunnel type magnetoresistive laminated film on the opposing surface, the thickness of the periphery of the insulating barrier film of the tunnel type magnetoresistive laminated film is increased, or By applying a process that increases insulation,
A structure is provided in which the insulating property at the peripheral portion is increased to prevent a short circuit between the free magnetic film and the fixed magnetic film on the opposing surface of the element. In addition, since magnetic signals can be handled in a region that is magnetically unaffected by other processes, it is considered to be effective for noise reduction and the like.
【００１０】第二に、素子の電極を接続するのに、トン
ネル型磁気抵抗積層膜の上面を高抵抗の膜で覆い、素子
の活性領域に相当する部分に穴を空け、これをコンタク
トホールとして電極を作製する構造が考えられる。この
コンタクトホールによって規定された領域を電流は流れ
ることから、実効トラック幅をこのコンタクトホールで
規定できると共に、周辺部の電流短絡を最少限に抑える
ことができる。また、この高抵抗膜に、反強磁性あるい
は硬質磁性材料を選ぶことによって磁区制御を行うこと
ができる。Second, in order to connect the electrodes of the device, the upper surface of the tunnel type magnetoresistive laminated film is covered with a high-resistance film, a hole is formed in a portion corresponding to the active region of the device, and this is used as a contact hole. A structure for producing an electrode is conceivable. Since the current flows through the area defined by the contact hole, the effective track width can be defined by the contact hole, and the current short-circuit in the peripheral portion can be minimized. Further, by selecting an antiferromagnetic or hard magnetic material for the high resistance film, magnetic domain control can be performed.
【００１１】[0011]
【発明の実施の形態】本発明の磁気ヘッドは、基本的構
造として磁気的なギャップを形成する一対の磁気シール
ドと上記磁気ギャップ内に配置したトンネル型磁気抵抗
効果素子とからなる。トンネル型磁気抵抗効果素子の構
成は下部磁気シールド，下部導電ギャップ，トンネル磁
気抵抗積層膜，上部導電ギャップ，上部磁気シールドが
順次積層されたものである。特にトンネル磁気抵抗積層
膜について、トンネル型磁気抵抗積層膜を構成する薄膜
は高周波マグネトロンスパッタリング装置により以下の
ように作製した。アルゴン１〜６ミリトールの雰囲気
で、セラミックス基板上に以下の材料を順次積層して作
製した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetic head according to the present invention comprises, as basic structures, a pair of magnetic shields forming a magnetic gap and a tunnel type magnetoresistive element disposed in the magnetic gap. The structure of the tunnel type magnetoresistive element is such that a lower magnetic shield, a lower conductive gap, a tunnel magnetoresistive laminated film, an upper conductive gap, and an upper magnetic shield are sequentially laminated. In particular, with respect to the tunnel magnetoresistive laminated film, the thin film constituting the tunnel type magnetoresistive laminated film was produced by a high-frequency magnetron sputtering apparatus as follows. The following materials were sequentially laminated on a ceramic substrate in an atmosphere of 1 to 6 mTorr of argon.
【００１２】スパッタリングに用いる材料（ターゲッ
ト）としてタンタル，ニッケル２０原子％−鉄合金，
銅，コバルト，クロム−マンガン合金，アルミナの各タ
ーゲットを用いた。必要に応じて、ターゲット上に添加
元素の一センチ角のチップを配置して組成を調整した。
チップは白金，ニッケル，鉄，コバルトを用いた。As a material (target) used for sputtering, tantalum, nickel 20 atomic% -iron alloy,
Copper, cobalt, chromium-manganese alloy, and alumina targets were used. If necessary, a 1 cm square chip of the additional element was placed on the target to adjust the composition.
The chips used were platinum, nickel, iron and cobalt.
【００１３】積層膜は、各ターゲットを配置したカソー
ドに各々高周波電力を投入して装置内にプラズマを発生
させておき、各カソードごとに配置されたシャッターを
一つずつ開閉して順次各層を形成した。膜形成時には永
久磁石を用いて基板に平行な方向に約８０エルステッド
の磁界を印加して一軸異方性をもたせるとともに、クロ
ームマンガン膜などの交換結合磁界の方向を各々の方向
に誘導した。In the laminated film, plasma is generated in the apparatus by applying high-frequency power to each of the cathodes on which the respective targets are arranged, and shutters arranged for each of the cathodes are opened and closed one by one to sequentially form each layer. did. During film formation, a magnetic field of about 80 Oe was applied in a direction parallel to the substrate using a permanent magnet to give uniaxial anisotropy, and the direction of an exchange coupling magnetic field such as a chromium manganese film was guided in each direction.
【００１４】基体上の素子の形成はフォトレジスト工程
によってパターニングした。The formation of the device on the substrate was patterned by a photoresist process.
【００１５】本発明にあるような同一層内での膜厚を変
える方法としては次のような幾つかの方法がある。厚い
層を成長して層を部分的に削る場合には、フォトレジス
ト工程によるパターニングや、ＣＭＰ，ＦＩＢの方法が
とられる。また、膜厚の薄い部分で膜を作製し、そのう
えにリフトオフパターンを作り、そのパターンの周囲に
同一膜を成長させる方法がとられる。これらの方法の選
択は、膜厚を変える層の面積、性質および材料による。There are several methods for changing the film thickness in the same layer as in the present invention as follows. When a thick layer is grown and the layer is partially removed, a method such as patterning by a photoresist process, CMP, or FIB is employed. Further, a method is used in which a film is formed in a thin portion, a lift-off pattern is formed thereon, and the same film is grown around the pattern. The choice of these methods depends on the area, nature and material of the layer whose thickness is to be changed.
【００１６】同様に、同一層内で電気抵抗を変える方法
としては、酸素や窒素，炭素，硫黄等のイオンを収束イ
オンビームを用いて照射し部分的に反応層を作る方法
と、イオン打ち込み法を用い、これらのイオンを注入し
た。このようにして作製した基体はスライダー加工し磁
気記録装置に搭載した。Similarly, as a method of changing the electric resistance in the same layer, there are a method of irradiating ions such as oxygen, nitrogen, carbon, and sulfur with a focused ion beam to partially form a reaction layer, and a method of ion implantation. Were used to implant these ions. The substrate thus manufactured was slider-processed and mounted on a magnetic recording apparatus.
【００１７】以下に本発明の具体的な実施例を図をおっ
て説明する。A specific embodiment of the present invention will be described below with reference to the drawings.
【００１８】図１は本発明のトンネル型磁気ヘッドの構
成例を示した概略図である。基体５０上に下部磁気シー
ルド３５，下部導電性ギャップ３３，トンネル型磁気積
層体１０１，絶縁ギャップ膜４０，上部導電性ギャップ
３４，上部磁気シールド兼下部磁気コア３６，コイル４
２，上部磁気コア８３を形成して構成される。上部磁気
シールド３６，下部磁気シールド３５に導電性材料を用
い、これらを引き出した構造にして電極にし、電流の印
加と再生出力の検出を行うようにした構造をとった。こ
のときは、上部磁気コア８３と上部磁気シールド兼下部
磁気コア３６はコイル４２に電流を印加することで発生
する起磁力により、記録媒体との対向面に露出して形成
した書き込みギャップ周囲に書き込み磁界を発生させ
る。FIG. 1 is a schematic diagram showing a configuration example of a tunnel type magnetic head according to the present invention. A lower magnetic shield 35, a lower conductive gap 33, a tunnel-type magnetic laminate 101, an insulating gap film 40, an upper conductive gap 34, an upper magnetic shield and lower magnetic core 36, and a coil 4 on a base 50.
2. The upper magnetic core 83 is formed. A conductive material was used for the upper magnetic shield 36 and the lower magnetic shield 35, and these were drawn out to form electrodes, which were used to apply current and detect reproduction output. At this time, the upper magnetic core 83 and the upper magnetic shield / lower magnetic core 36 write by the magnetomotive force generated by applying a current to the coil 42 around the write gap formed on the surface facing the recording medium. Generate a magnetic field.
【００１９】対向面と基体表面によって磁気ヘッドの方
位は決定し、トラック幅方向６１と素子高さ方向６２，
磁気ヘッド駆動方向６３が定義される。対向面からみる
と下部磁気シールド３５と下部導電性ギャップ３３とト
ンネル型積層膜１０１は直接つながっており、また、上
部導電性ギャップ３４と上部磁気シールド兼下部磁気コ
ア３６はつながっている。下部磁気シールド３５から上
部磁気シールド３６までのあいだに、挟まれたトンネル
型磁気抵抗効果膜については、図２に示すような構造を
もつ。このため、対向面においては固定側磁性膜１１と
自由側磁性膜１２とのあいだに絶縁材料からなるバリヤ
膜１７が挟まれた構造である。このバリヤ膜の材料はＡ
ｌ2Ｏ3やＺｒ2Ｏ3，ＳｉＯ2 などの酸化物，炭化物，窒
化物を用いることを特徴とする。The azimuth of the magnetic head is determined by the facing surface and the substrate surface, and the track width direction 61 and the element height direction 62,
A magnetic head driving direction 63 is defined. When viewed from the facing surface, the lower magnetic shield 35, the lower conductive gap 33, and the tunnel-type laminated film 101 are directly connected, and the upper conductive gap 34 and the upper magnetic shield and lower magnetic core 36 are connected. The tunnel type magnetoresistive film sandwiched between the lower magnetic shield 35 and the upper magnetic shield 36 has a structure as shown in FIG. For this reason, on the opposing surface, a barrier film 17 made of an insulating material is sandwiched between the fixed magnetic film 11 and the free magnetic film 12. The material of this barrier film is A
It is characterized by using oxides, carbides and nitrides such as l 2 O 3 , Zr 2 O 3 and SiO 2 .
【００２０】この膜の作製法としては金属薄膜を作成
し、これをプラズマ照射やイオン打ち込み等で化学結合
を強制的に行う場合と酸素あるいは窒素の雰囲気中で放
置あるいは熱処理する方法がある。簡単のため、ここで
はこれらの処理を化学反応処理と呼ぶことにする。先に
説明したように固定側磁性膜と自由側の絶縁バリヤ層と
呼ばれる層の周囲が厚くなっており、この厚くなった部
分が対向面に露出した構造となっている。As a method for producing this film, there are a method of forming a metal thin film and forcibly forming a chemical bond by plasma irradiation or ion implantation, and a method of leaving or heat-treating the film in an atmosphere of oxygen or nitrogen. For simplicity, these processes will be referred to as chemical reaction processes here. As described above, the periphery of the fixed-side magnetic film and the layer called the free-side insulating barrier layer is thickened, and the thickened portion is exposed on the facing surface.
【００２１】この作製法としては、金属膜を酸化させて
バリヤ膜を作成する場合は金属膜を作成し、これをミリ
ングやＦＩＢ（集束イオンビームミリング法）で薄く加
工し、しかる後に化学反応処理を行う場合と、はじめか
らバリヤ膜に相当する材料からなる膜を作成し、これを
加工し化学反応処理を行う方法、またはバリヤ膜に相当
する材料からなる膜を作成しこれを加工したものをその
ままバリヤ膜として用いる場合があるが、これらについ
ても大きさに違いはあるが、トンネル磁気抵抗効果は認
められた。また、膜厚を変えずにバリヤ膜に相当する膜
の表面に部分的に導電性のイオンを打ち込むあるいは高
エネルギーの軽元素を打ち込むことで酸素結合を破壊し
て部分的に電気伝導率を変える方法も有効である。As a manufacturing method, when a barrier film is formed by oxidizing a metal film, a metal film is formed, and the metal film is thinly processed by milling or FIB (focused ion beam milling method). When a film made of a material equivalent to a barrier film is created from the beginning and then processed and subjected to a chemical reaction treatment, or a film made of a material equivalent to a barrier film is created and processed. Although the barrier film may be used as it is, there is a difference in the size of the barrier film, but the tunnel magnetoresistance effect was recognized. In addition, by partially implanting conductive ions or high-energy light elements into the surface of the film corresponding to the barrier film without changing the film thickness, oxygen bonds are broken to partially change the electric conductivity. The method is also effective.
【００２２】図３（ａ),（ｂ）は一般的なトンネル型磁
気抵抗積層体の膜構成の一例をあげたものである。トン
ネル型磁気抵抗積層体１０２は自由側磁性層１２，バリ
ヤ層１７，固定側磁性層１１を積層した構造である。固
定側磁性層１１は反強磁性バイアス膜７１と固定強磁性
膜７２からなり、固定強磁性膜７２は直接重ねて接合し
た反強磁性バイアス膜７１による交換結合により一方向
異方性を印加されている。自由側磁性膜は自由強磁性膜
１２と磁気分離膜兼下地膜１８，磁区制御膜１６を積層
してなる。自由側磁性膜１２は単層の磁性膜であっても
良い。軟磁性膜と磁気抵抗効果膜の積層体であるほうが
より効果が大きい。磁区制御膜１６は硬磁性膜と下地膜
からなる。下地膜は省略できるが、あったほうが硬磁性
膜の特性が安定する。FIGS. 3A and 3B show an example of a film configuration of a general tunnel type magnetoresistive laminate. The tunnel type magnetoresistive laminate 102 has a structure in which a free magnetic layer 12, a barrier layer 17, and a fixed magnetic layer 11 are laminated. The fixed magnetic layer 11 is composed of an antiferromagnetic bias film 71 and a fixed ferromagnetic film 72. The fixed ferromagnetic film 72 is applied with unidirectional anisotropy by exchange coupling by the antiferromagnetic bias film 71 directly superimposed and joined. ing. The free magnetic film is formed by laminating a free ferromagnetic film 12, a magnetic separation film / base film 18, and a magnetic domain control film 16. The free magnetic film 12 may be a single-layer magnetic film. The effect is greater when a laminate of a soft magnetic film and a magnetoresistive film is used. The magnetic domain control film 16 includes a hard magnetic film and a base film. Although the under film can be omitted, the characteristics of the hard magnetic film are more stable when it is provided.
【００２３】磁気的分離膜兼下地膜１８は磁区制御膜１
６と自由側磁性膜１２との膜面を介した相互作用を十分
に弱め、分離する機能を持つと共に、この上に形成する
膜の特性を安定させる機能をもつ。図中に本実施例で用
いた各膜の組成を記してある。反強磁性バイアス膜７１
としてＣｒ４５Ｍｎ４５Ｐｔ１０３０ナノメートル、固
定側強磁性膜７２としてＣｏ膜３ナノメートル、バリヤ
膜１７としてＡｌ2Ｏ3が１０ナノメートルを部分的に３
ナノメートルまで薄くしたもの、磁気抵抗増加膜７４と
してＣｏ１ナノメートル、軟磁性膜７５としてＮｉ８１
Ｆｅ１９膜５ナノメートル、磁気的分離兼下地膜１８と
してＴａ膜２０ナノメートル、硬磁性膜７７としてＣｏ
Ｐｔ膜１０ナノメートル、下地膜７８としてＣｒ膜５ナ
ノメートルをそれぞれ用いた。The magnetic separation film / base film 18 is a magnetic domain control film 1
6 has a function of sufficiently weakening the interaction between the free magnetic film 12 and the free magnetic film 12 through the film surface, separating the film, and stabilizing the characteristics of a film formed thereon. The composition of each film used in this example is shown in the figure. Antiferromagnetic bias film 71
1045 nm of Cr45Mn45Pt, 3 nm of a Co film as the fixed-side ferromagnetic film 72, and 10 nm of Al 2 O 3 as the barrier film 17.
1 nm as the magnetoresistance increasing film 74 and Ni 81 as the soft magnetic film 75
Fe19 film 5 nm, Ta film 20 nm as magnetic separation and underlayer 18, Co as hard magnetic film 77
The Pt film was 10 nm, and the Cr film was 5 nm as the underlayer 78.
【００２４】図４はトンネル型磁気抵抗積層体を構成す
る膜の磁気的な異方性の印加方向を示した図である。磁
区制御膜１６は残留磁化がトラック幅方向６１に平行に
なるように着磁する。自由強磁性膜１２は検知すべき磁
界が素子高さ方向６２に平行に入るのに対し、磁化が回
転する機構をとるべく弱い異方性をトラック幅方向６１
に平行な方向に誘導する。固定側磁性膜１１はその残留
磁化が素子高さ方向６３に平行な方向になるように交換
結合を誘導する。FIG. 4 is a diagram showing the direction of application of the magnetic anisotropy of the film constituting the tunnel type magnetoresistive laminate. The magnetic domain control film 16 is magnetized so that the residual magnetization is parallel to the track width direction 61. In the free ferromagnetic film 12, while the magnetic field to be detected enters in parallel with the element height direction 62, a weak anisotropy is formed in the track width direction 61 so as to take a mechanism for rotating the magnetization.
Guide in a direction parallel to. The fixed-side magnetic film 11 induces exchange coupling such that the remanent magnetization is in a direction parallel to the element height direction 63.
【００２５】上述したような構成について本発明のトン
ネル磁気抵抗効果素子およびこれを搭載した磁気記録再
生装置を試験した結果、充分な出力と良好なバイアス特
性を有し動作の信頼性も良好であった。As a result of testing the tunnel magnetoresistive element of the present invention and a magnetic recording / reproducing apparatus equipped with the tunnel magnetoresistive effect element of the present invention, it has a sufficient output, good bias characteristics and good operation reliability. Was.
【００２６】一方、これとは別に図５に示すようにトン
ネル型積層膜１０２について、固定側磁性層１１が下
側、自由側磁性層１２が上部になっており、自由側磁性
層１２の上に高抵抗の磁区制御膜１６が積層され、その
上に上部電極兼上部磁気シールド兼下部磁気コア３６が
でている構造を検討した。高抵抗磁区制御膜１６の材料
にはＮＩＯを用いた。この高抵抗磁区制御膜１６の膜厚
がトンネル型積層膜上で薄くなっておりシールド３６に
電気的に接続している。膜中で膜厚を変える方法として
ＣＭＰ（化学的機械研磨法）やＦＩＢなどを用いた。On the other hand, as shown in FIG. 5, in the tunnel type laminated film 102, the fixed side magnetic layer 11 is on the lower side, the free side magnetic layer 12 is on the upper side. The structure in which a high-resistance magnetic domain control film 16 is stacked on top of this, and an upper electrode / upper magnetic shield / lower magnetic core 36 is formed thereon is examined. NIO was used as the material of the high resistance magnetic domain control film 16. The thickness of the high resistance magnetic domain control film 16 is reduced on the tunnel-type laminated film and is electrically connected to the shield 36. As a method of changing the film thickness in the film, CMP (chemical mechanical polishing), FIB, or the like was used.
【００２７】このようにして磁区制御膜１６上に膜厚の
部分的に薄い部分、あるいはコンタクトホールとなる穴
をあけることで、磁区制御膜上部の電極とトンネル磁気
抵抗効果膜を電気的に接続した構造を作成した。このと
き磁区制御膜１６上に作成する穴の大きさ、特にトラッ
ク幅方向６１の長さを実際のトラック幅に相当する大き
さにして、シールドの長さはトンネル磁気抵抗効果活性
領域１０２のトラック幅方向６１の長さによって決まる
トラック幅よりも小さくすると、実際のトラック幅は磁
区制御膜１６上に作成する穴の大きさによって規定され
るようになる。これは、トンネル磁気抵抗効果膜中を上
部シールド３６から下部シールド３５へほぼまっすぐに
電流が流れるためである。このような構造をとること
で、事実上のトラック幅を規定する構造になっているも
のも作製した。In this manner, by forming a partly thin portion or a hole serving as a contact hole on the magnetic domain control film 16, the electrode on the magnetic domain control film and the tunnel magnetoresistive film are electrically connected. Created structure. At this time, the size of the hole formed on the magnetic domain control film 16, in particular, the length of the hole in the track width direction 61 is set to a size corresponding to the actual track width, and the length of the shield is set to the track of the tunnel magnetoresistive effect active region 102. When the track width is smaller than the track width determined by the length in the width direction 61, the actual track width is determined by the size of the hole formed on the magnetic domain control film 16. This is because current flows almost straight from the upper shield 36 to the lower shield 35 in the tunnel magnetoresistive film. By adopting such a structure, a structure in which the track width is defined in effect is also manufactured.
【００２８】このため、トンネル磁気抵抗効果膜の膜の
活性領域を十分な大きさで作成し、トラック幅を上部の
コンタクトホールの大きさで決めることができ、高密度
記録に対応できる構造を得ることができた。上述したよ
うな構成について、本発明のトンネル磁気抵抗効果素子
およびこれを搭載した図６の磁気記録再生装置を試験し
た結果、充分な出力と良好なバイアス特性を有し動作の
信頼性も良好であった。For this reason, the active region of the tunnel magnetoresistive film is formed with a sufficient size, the track width can be determined by the size of the upper contact hole, and a structure corresponding to high density recording can be obtained. I was able to. As a result of testing the tunnel magnetoresistive element of the present invention and the magnetic recording / reproducing apparatus of FIG. 6 equipped with the tunnel magnetoresistive element of the present invention, it has sufficient output and good bias characteristics, and has good operation reliability. there were.
【００２９】[0029]
【発明の効果】以上詳述したように、本発明によれば良
好なバイアス特性と、電気的に安定でノイズを低減した
ヘッドが得られ、また、再生トラック幅もトンネル磁気
抵抗効果膜の活性部分の大きさとは異なる、磁区制御膜
上に開口した穴の大きさで規定できる制御性が向上する
事から、高い記録密度に耐えうる良好な再生出力とバイ
アス特性を有する磁気ヘッドおよび高記録密度再生装置
を得ることができる。As described above in detail, according to the present invention, it is possible to obtain a head having good bias characteristics, an electrically stable head with reduced noise, and a reproduction track width of the tunnel magnetoresistive film. Since the controllability that can be defined by the size of the hole opened on the magnetic domain control film, which is different from the size of the portion, is improved, a magnetic head having good reproduction output and bias characteristics that can withstand high recording density and high recording density A playback device can be obtained.
【図１】本発明のトンネル型磁気抵抗ヘッドの構成例を
示した斜視図である。FIG. 1 is a perspective view showing a configuration example of a tunnel type magnetoresistive head of the present invention.
【図２】本発明のトンネル型磁気抵抗積層膜の構成例を
示した側断面図である。FIG. 2 is a side sectional view showing a configuration example of a tunnel type magnetoresistive laminated film of the present invention.
【図３】（ａ),（ｂ）は本発明のトンネル型磁気抵抗ヘ
ッドのトンネル型磁気抵抗積層膜の構成例を示した断面
図である。FIGS. 3A and 3B are cross-sectional views showing a configuration example of a tunnel type magnetoresistive laminated film of a tunnel type magnetoresistive head of the present invention.
【図４】本発明のトンネル型磁気抵抗効果ヘッドのトン
ネル型磁気抵抗積層体を構成する膜の磁気的な異方性の
印加方向を示した説明図である。FIG. 4 is an explanatory diagram showing a direction of application of magnetic anisotropy of a film constituting a tunnel type magnetoresistive laminate of the tunnel type magnetoresistive head of the present invention.
【図５】本発明のトンネル型磁気抵抗効果ヘッドのトン
ネル型磁気抵抗積層膜の磁気異方性の構成例を示した説
明図である。FIG. 5 is an explanatory diagram showing a configuration example of magnetic anisotropy of a tunnel type magnetoresistive laminated film of the tunnel type magnetoresistive head of the present invention.
【図６】本発明のトンネル型磁気抵抗効果ヘッドを搭載
した磁気再生装置の構成例を示した説明図である。FIG. 6 is an explanatory diagram showing a configuration example of a magnetic reproducing apparatus equipped with the tunnel type magnetoresistive head of the present invention.
１０１…トンネル型磁気抵抗積層体露出部、１０２…活
性領域のトンネル型磁気抵抗積層体、１１…固定側磁性
膜、１２…自由側磁性膜、１５…自由強磁性膜、１６…
磁区制御膜、１７…バリア膜、１８…磁気的分離膜兼下
地膜、３３…下部導電ギャップ、３４…上部導電ギャッ
プ、３５…下部磁気シールド、３６…上部磁気シール
ド、４０…絶縁ギャップ膜、４１…電極端子、４２…コ
イル、５０…基体、６１…トラック幅方向、６２…素子
高さ方向、６３…磁気ヘッドの駆動方向、６４…対向
面、６５…トンネル型磁気抵抗積層体の活性領域、６６
…自由強磁性膜の異方性の方向、６７…磁区制御膜の残
留磁化の方向、６８…固定側磁性膜の残留磁化の方向、
７１…反強磁性膜、７２…固定強磁性膜、７４…磁気抵
抗増加膜、７５…軟磁性膜、７７…硬磁性膜、７８…下
地膜、８１…磁気デイスク、８２…モーター、８３…ア
クチュエーター、８４…制御機構、８５…データ再生複
合系。DESCRIPTION OF SYMBOLS 101 ... Tunnel type magnetoresistive laminated body exposure part, 102 ... Tunnel type magnetoresistive laminated body of an active area, 11 ... Fixed side magnetic film, 12 ... Free side magnetic film, 15 ... Free ferromagnetic film, 16 ...
Magnetic domain control film, 17: barrier film, 18: magnetic separation film / base film, 33: lower conductive gap, 34: upper conductive gap, 35: lower magnetic shield, 36: upper magnetic shield, 40: insulating gap film, 41 ... electrode terminals, 42 ... coils, 50 ... base, 61 ... track width direction, 62 ... element height direction, 63 ... magnetic head driving direction, 64 ... facing surface, 65 ... active region of tunnel type magnetoresistive laminate, 66
... direction of anisotropy of free ferromagnetic film, 67 ... direction of residual magnetization of magnetic domain control film, 68 ... direction of residual magnetization of fixed magnetic film,
71: antiferromagnetic film, 72: fixed ferromagnetic film, 74: magnetic resistance increasing film, 75: soft magnetic film, 77: hard magnetic film, 78: base film, 81: magnetic disk, 82: motor, 83: actuator , 84: control mechanism, 85: data reproduction composite system.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 星屋 裕之 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 Ｆターム(参考） 5D034 BA03 BA05 BA15 BB03 BB09 CA04 5D091 AA10 DD03 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hiroyuki Hoshiya 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 5D034 BA03 BA05 BA15 BB03 BB09 CA04 5D091 AA10 DD03
Claims (15)
録媒体上に記録された信号を再生する磁気ヘッドを有す
る磁気記録再生装置において、前記磁気ヘッドが磁気的
なギャップを形成する一対の磁気シールドと上記磁気ギ
ャップ内に配置したトンネル型磁気抵抗効果膜とを有
し、そのトンネル型磁気抵抗効果素子の構成が下部磁気
シールド，下部導電ギャップ，トンネル磁気抵抗積層
膜，上部導電ギャップ，上部磁気シールドが順次積層さ
れてなり、上記トンネル磁気抵抗積層膜が、検知すべき
磁界方向に対して平行な方向に反強磁性膜などにより磁
気異方性が強く印加されてその磁化方向が固定されてい
る固定側磁性膜と、上記検知すべき磁界方向に対して面
内直交する方向に弱く異方性が印加されている自由側磁
性膜と、上記固定側磁性膜と自由側磁性膜の間に形成し
たる絶縁性材料からなるバリヤ膜とからなるサンドイッ
チ構造を少なくとも上記素子の活性領域に有しており、
そのトンネル型磁気抵抗効果素子を構成する少なくとも
一つの層について、前記層の膜面内での膜厚が部分的に
同一層面内の他の部分の膜厚と比較して薄くなっている
構造をもつ、あるいは、前記トンネル型磁気抵抗効果素
子を構成する少なくとも一つの層について、前記層の膜
面内での電気抵抗が部分的に同一層面内の他の部分の電
気抵抗と異なることを特徴とするトンネル磁気抵抗積層
膜およびトンネル磁気抵抗効果素子並びにこれを用いた
磁気記録再生装置。1. A magnetic recording / reproducing apparatus having a magnetic head for reproducing a signal recorded on a recording medium through an opposing surface close to the recording medium, wherein the magnetic head forms a pair of magnetic gaps. It has a magnetic shield and a tunnel type magnetoresistive film disposed in the magnetic gap. The configuration of the tunnel type magnetoresistive element is a lower magnetic shield, a lower conductive gap, a tunnel magnetoresistive laminated film, an upper conductive gap, an upper portion. Magnetic shields are sequentially laminated, and the tunnel magnetoresistive laminated film is strongly applied with magnetic anisotropy by an antiferromagnetic film or the like in a direction parallel to a magnetic field direction to be detected, and its magnetization direction is fixed. A fixed magnetic film, a free magnetic film to which anisotropy is weakly applied in a direction perpendicular to the plane of the magnetic field to be detected, The sandwich structure composed of a barrier film made of formed upcoming insulating material between the membrane and the free magnetic layer has the active region of at least the element,
At least one layer constituting the tunnel type magnetoresistive element has a structure in which the film thickness of the layer in the film surface is partially smaller than the film thickness of other portions in the same layer surface. Or at least one layer constituting the tunnel type magnetoresistive element, wherein the electric resistance of the layer in the film plane is partially different from the electric resistance of another part in the same layer plane. Tunnel magnetoresistive laminated film, tunnel magnetoresistive element, and magnetic recording / reproducing apparatus using the same.
効果素子において、固定側磁性膜と自由側磁性膜の間に
形成した絶縁性材料からなるバリヤ膜のバリヤ膜面内の
膜厚が部分的に同一バリヤ膜面内の他の部分と比較して
薄くなっている構造をもつことを特徴とするトンネル磁
気抵抗積層膜およびトンネル磁気抵抗効果素子並びにこ
れを用いた磁気記録再生装置。2. The tunnel magnetoresistive element according to claim 1, wherein the barrier film made of an insulating material formed between the fixed magnetic film and the free magnetic film has a partial thickness in the barrier film surface. A tunnel magnetoresistive laminated film, a tunnel magnetoresistive effect element, and a magnetic recording / reproducing apparatus using the same, characterized by having a structure that is thinner than other portions in the same barrier film plane.
効果素子において、自由側磁性層が上面になる構成のト
ンネル磁気抵抗積層膜について、自由側磁性層の上に積
層した磁区制御膜に電気抵抗の高い材料を用い、この膜
面内の膜厚を部分的に周囲より薄くする、あるいは完全
に除去し、この膜厚を薄くした部分に上部電極を接触さ
せた構造をもつトンネル磁気抵抗積層膜およびトンネル
磁気抵抗効果素子及びこれを用いた磁気記録再生装置。3. The tunneling magnetoresistive element according to claim 1, wherein the tunneling magnetoresistive laminated film having the free side magnetic layer on the upper surface has an electric resistance formed on the magnetic domain control film laminated on the free side magnetic layer. Tunneling magnetoresistive laminated film with a structure in which the thickness of the film in the film surface is partially thinned or completely removed from the surroundings, and the upper electrode is in contact with the thinned portion. And a tunnel magnetoresistive element and a magnetic recording / reproducing apparatus using the same.
効果素子及びこれを用いた磁気記録再生装置において、
磁区制御膜が（Ｍｎ，Ｆｅ，Ｃｏ，Ｎｉ）の少なくとも
一種類と、（Ｏ，Ｎ，Ｃ，Ｐ）の少なくとも一種類の元
素による組み合わせを含む化合物によって構成される電
気抵抗の高い材料を用いていることを特徴とするトンネ
ル磁気抵抗効果素子並びにこれを用いた磁気記録再生装
置。4. A tunnel type magnetoresistive element according to claim 3, and a magnetic recording / reproducing apparatus using the same.
The magnetic domain control film is made of a material having a high electric resistance which is composed of a compound containing a combination of at least one kind of (Mn, Fe, Co, Ni) and at least one kind of element (O, N, C, P). And a magnetic recording / reproducing apparatus using the same.
効果素子及びこれを用いた磁気記録再生装置において、
磁区制御膜上に形成する部分的に周囲よりも膜厚を薄く
したあるいは完全に除去した部分のトラック方向の長さ
がトンネル磁気抵抗効果素子の活性部分の長さよりも小
さいことを特徴とするトンネル磁気抵抗効果素子並びに
これを用いた磁気記録再生装置。5. A tunnel type magnetoresistive element according to claim 3 or 4, and a magnetic recording / reproducing apparatus using the same.
A tunnel formed on the magnetic domain control film, wherein the length in the track direction of the part which is partially thinner than the surrounding part or completely removed is smaller than the length of the active part of the tunnel magnetoresistive element. A magnetoresistive element and a magnetic recording / reproducing apparatus using the same.
トンネル型磁気抵抗効果素子及びこれを用いた磁気記録
再生装置において、磁区制御膜上に形成する部分的に周
囲よりも膜厚を薄くしたあるいは完全に除去した部分の
面積がトンネル磁気抵抗効果素子の活性部分の長さより
も小さいことを特徴とするトンネル磁気抵抗効果素子並
びにこれを用いた磁気記録再生装置。6. A tunnel type magnetoresistive element according to any one of claims 3 to 5, and a magnetic recording / reproducing apparatus using the tunnel type magnetoresistive element. And a magnetic recording / reproducing apparatus using the tunnel magnetoresistive element, wherein the area of a portion where the thickness is reduced or completely removed is smaller than the length of the active portion of the tunnel magnetoresistive element.
効果素子及びこれを用いた磁気記録再生装置におけるト
ンネル磁気抵抗効果素子の固定側磁性膜と自由側磁性膜
の間に形成した絶縁性のバリヤ膜において、バリヤ膜面
内の電流密度あるいは電気抵抗が部分的に同バリヤ膜面
内の他の部分のそれぞれ電流密度あるいは電気抵抗と比
較して小さくなっていることを特徴とするトンネル磁気
抵抗積層膜およびこれを用いた磁気記録再生装置。7. An insulating film formed between a fixed magnetic film and a free magnetic film of a tunnel magnetoresistive element of a tunnel type magnetoresistive element according to claim 1 or 2 and a magnetic recording / reproducing apparatus using the same. Wherein the current density or the electric resistance in the barrier film surface is partially smaller than the current density or the electric resistance of the other portions in the barrier film surface, respectively. Resistance laminated film and magnetic recording / reproducing apparatus using the same.
効果素子及びこれを用いた磁気記録再生装置におけるト
ンネル磁気抵抗効果素子の固定側磁性膜と自由側磁性膜
の間に形成した絶縁性のバリヤ膜において、上記バリヤ
膜膜面外周部の膜厚が所定の電圧に対して電流を十分絶
縁性を有する臨界膜厚よりも厚く、かつ膜面中央部分の
膜厚が外周部よりも薄くなっていることを特徴とするト
ンネル磁気抵抗積層膜および磁気抵抗効果素子。8. An insulating film formed between a fixed magnetic film and a free magnetic film of the tunnel magnetoresistive element of the tunnel magnetoresistive element according to claim 1 or 2 and a magnetic recording / reproducing apparatus using the same. In the barrier film, the film thickness at the outer peripheral portion of the barrier film surface is larger than a critical film thickness having sufficient insulating property for a predetermined voltage, and the film thickness at the central portion of the film surface is smaller than the outer peripheral portion. A tunnel magnetoresistive laminated film and a magnetoresistive element, comprising:
トンネル型磁気抵抗効果素子及びこれを用いた磁気記録
再生装置におけるトンネル型磁気抵抗効果素子のバリヤ
膜において上記バリヤ膜膜面外周部の電気抵抗が所定の
電圧に対して十分絶縁体で、かつ膜面中央部分が外周部
よりも電気抵抗が低いことを特徴とするトンネル磁気抵
抗積層膜および磁気抵抗効果素子並びにこれを用いた磁
気記録再生装置。9. A barrier film of a tunnel type magnetoresistive element according to any one of claims 1 to 8 and a barrier film of the tunnel type magnetoresistive element in a magnetic recording / reproducing apparatus using the same. A tunnel magnetoresistive laminated film and a magnetoresistive element, wherein the electrical resistance of the portion is sufficiently insulating for a predetermined voltage, and the electrical resistance of the central portion of the film surface is lower than that of the outer peripheral portion. Magnetic recording and reproducing device.
か１項記載したトンネル型磁気抵抗効果素子及びこれを
用いた磁気記録再生装置において、バリヤ膜面内に作製
した膜厚の薄い部分が導電性を有する材料により埋めら
れていることを特徴とするトンネル磁気抵抗積層膜およ
び磁気抵抗効果素子並びにこれを用いた磁気記録再生装
置。10. The tunnel type magnetoresistive element according to claim 1, and a magnetic recording / reproducing apparatus using the same, wherein the thickness of the film formed in the barrier film surface is reduced. A tunnel magnetoresistive laminated film, a magnetoresistive element, and a magnetic recording / reproducing apparatus using the same, wherein a thin portion is filled with a conductive material.
抵抗効果素子及びこれを用いた磁気記録再生装置におい
て、上記のバリヤ膜面内に作製した膜厚の薄い部分を埋
めた導電性を有する材料による膜の上面が平坦な構造を
もつことを特徴とするトンネル磁気抵抗積層膜および磁
気抵抗効果素子並びにこれを用いた磁気記録再生装置。11. A tunnel type magnetoresistive element according to claim 10 and a magnetic recording / reproducing apparatus using said tunnel type magnetoresistive element, wherein said barrier film has conductivity so as to fill a thin portion formed in said barrier film surface. A tunnel magnetoresistive laminated film, a magnetoresistive element, and a magnetic recording / reproducing apparatus using the same, wherein the upper surface of a film made of a material has a flat structure.
項記載したトンネル型磁気抵抗効果素子及びこれを用い
た磁気記録再生装置で、磁区制御膜を構成する高抵抗膜
の開口部の大きさが磁気再生におけるトラック幅よりも
小さくなることを特徴とするトンネル磁気抵抗積層膜お
よび磁気抵抗効果素子並びにこれを用いた磁気記録再生
装置。12. A method according to claim 3, wherein
The tunnel type magnetoresistive element and the magnetic recording / reproducing apparatus using the tunnel type described above, wherein the size of the opening of the high resistance film forming the magnetic domain control film is smaller than the track width in magnetic reproduction. A tunnel magnetoresistive laminated film, a magnetoresistive element, and a magnetic recording / reproducing apparatus using the same.
１１，１２のいずれか１項記載したトンネル型磁気抵抗
効果素子及びこれを用いた磁気記録再生装置で、バリヤ
膜の膜厚を薄くするときに当該膜を構成する金属膜を作
製し、膜厚を薄くする処理を行い、その後、当該膜の表
面に酸素あるいは炭素，窒素を反応させた化合物からな
るバリヤ膜を作製することを特徴とするトンネル磁気抵
抗積層膜および磁気抵抗効果素子の作製法。13. The method according to claim 1, wherein
13. The tunnel type magnetoresistive element described in any one of 11 and 12, and a magnetic recording / reproducing apparatus using the tunnel type magnetoresistive element, forming a metal film constituting the barrier film when the thickness of the barrier film is reduced. A method for producing a tunnel magnetoresistive laminated film and a magnetoresistive element, wherein a barrier film made of a compound obtained by reacting oxygen, carbon, or nitrogen is formed on the surface of the film.
１１，１２のいずれか１項記載したトンネル型磁気抵抗
効果素子及びこれを用いた磁気記録再生装置で、バリヤ
膜の膜厚を薄くするときに当該膜を構成する化合物の膜
を作製し、膜厚を薄くする処理を行い作製したバリヤ膜
を用いることを特徴とするトンネル磁気抵抗積層膜およ
び磁気抵抗効果素子の作製法。14. A method according to claim 1, wherein
13. A tunnel-type magnetoresistive element according to any one of 11 and 12, and a magnetic recording / reproducing apparatus using the tunnel-type magnetoresistive element, wherein a film of a compound constituting the barrier film is formed when the thickness of the barrier film is reduced. A method for producing a tunnel magnetoresistive laminated film and a magnetoresistive element, wherein a barrier film produced by performing a process of reducing the thickness is used.
１１，１２のいずれか１項記載したトンネル型磁気抵抗
効果素子及びこれを用いた磁気記録再生装置で、バリヤ
膜の膜厚を薄くするときに当該膜を構成する化合物の膜
を作製し、膜厚を薄くする処理を行い、その後、当該膜
の表面にエネルギーを与えられた酸素あるいは炭素，窒
素を照射する処理を行ったバリヤ膜を用いることを特徴
とするトンネル磁気抵抗積層膜および磁気抵抗効果素子
の作製法。15. The method of claim 1, 2, 3, 8, 9, 10,
13. A tunnel-type magnetoresistive element according to any one of 11 and 12, and a magnetic recording / reproducing apparatus using the tunnel-type magnetoresistive element, wherein a film of a compound constituting the barrier film is formed when the thickness of the barrier film is reduced. A tunnel magnetoresistive laminated film and a magnetoresistive effect, characterized by using a barrier film which has been subjected to a process of reducing the thickness and then irradiating the surface of the film with energized oxygen, carbon or nitrogen. Device fabrication method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16658198A JP4058164B2 (en) | 1998-06-15 | 1998-06-15 | Magnetic recording / reproducing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16658198A JP4058164B2 (en) | 1998-06-15 | 1998-06-15 | Magnetic recording / reproducing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000003507A true JP2000003507A (en) | 2000-01-07 |
| JP4058164B2 JP4058164B2 (en) | 2008-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16658198A Expired - Fee Related JP4058164B2 (en) | 1998-06-15 | 1998-06-15 | Magnetic recording / reproducing device |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6934132B2 (en) * | 2000-08-03 | 2005-08-23 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
-
1998
- 1998-06-15 JP JP16658198A patent/JP4058164B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6934132B2 (en) * | 2000-08-03 | 2005-08-23 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US6999287B2 (en) | 2000-08-03 | 2006-02-14 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7158355B2 (en) | 2000-08-03 | 2007-01-02 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7161774B2 (en) | 2000-08-03 | 2007-01-09 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7265949B2 (en) | 2000-08-03 | 2007-09-04 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7277261B2 (en) | 2000-08-03 | 2007-10-02 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7298596B2 (en) | 2000-08-03 | 2007-11-20 | Nec Corporation | Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| US7369375B2 (en) | 2000-08-03 | 2008-05-06 | Nec Corporation | Magneto-resistance effect element and magneto-resistance effect head |
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| Publication number | Publication date |
|---|---|
| JP4058164B2 (en) | 2008-03-05 |
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