ITMI20111558A1 - Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro - Google Patents

Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro

Info

Publication number
ITMI20111558A1
ITMI20111558A1 IT001558A ITMI20111558A ITMI20111558A1 IT MI20111558 A1 ITMI20111558 A1 IT MI20111558A1 IT 001558 A IT001558 A IT 001558A IT MI20111558 A ITMI20111558 A IT MI20111558A IT MI20111558 A1 ITMI20111558 A1 IT MI20111558A1
Authority
IT
Italy
Prior art keywords
crystalline
semiconductor
fononi
atomes
seebeck
Prior art date
Application number
IT001558A
Other languages
English (en)
Inventor
Gianfranco Cerofolini
Dario Narducci
Original Assignee
Consorzio Delta Ti Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consorzio Delta Ti Res filed Critical Consorzio Delta Ti Res
Priority to IT001558A priority Critical patent/ITMI20111558A1/it
Priority to PCT/IB2012/054407 priority patent/WO2013030763A1/en
Priority to US14/241,711 priority patent/US9269881B2/en
Priority to EP12759267.3A priority patent/EP2751853B1/en
Publication of ITMI20111558A1 publication Critical patent/ITMI20111558A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Semiconductor Memories (AREA)
IT001558A 2011-08-30 2011-08-30 Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro ITMI20111558A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT001558A ITMI20111558A1 (it) 2011-08-30 2011-08-30 Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro
PCT/IB2012/054407 WO2013030763A1 (en) 2011-08-30 2012-08-28 Seebeck/peltier thermoelectric conversion device having phonon confinement layers of crystalline semiconductor containing angstrom-sized organic groups as semiconductor atoms substituents within the crystal lattice and fabrication process
US14/241,711 US9269881B2 (en) 2011-08-30 2012-08-28 Seebeck/peltier thermoelectric conversion device having phonon confinement layers of crystalline semiconductor containing angstrom-sized organic groups as semiconductor atoms substituents within the crystal lattice and fabrication process
EP12759267.3A EP2751853B1 (en) 2011-08-30 2012-08-28 Seebeck/peltier thermoelectric conversion device having phonon confinement layers of crystalline semiconductor containing angstrom-sized organic groups as semiconductor atoms substituents within the crystal lattice and fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001558A ITMI20111558A1 (it) 2011-08-30 2011-08-30 Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro

Publications (1)

Publication Number Publication Date
ITMI20111558A1 true ITMI20111558A1 (it) 2013-03-01

Family

ID=44898824

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001558A ITMI20111558A1 (it) 2011-08-30 2011-08-30 Dispositivo di conversione termoelettrica seebeck/peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e pro

Country Status (4)

Country Link
US (1) US9269881B2 (it)
EP (1) EP2751853B1 (it)
IT (1) ITMI20111558A1 (it)
WO (1) WO2013030763A1 (it)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070275516A1 (en) * 2004-02-10 2007-11-29 Satoshi Eguchi Manufacturing Method of Semiconductor Device
WO2011073142A1 (en) * 2009-12-15 2011-06-23 Universita' Degli Studi Di Milano - Bicocca Seebeck/peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779814A (en) * 1972-12-26 1973-12-18 Monsanto Co Thermoelectric devices utilizing electrically conducting organic salts
ITRM20080193A1 (it) 2008-04-11 2009-10-12 Univ Milano Bicocca Dispositivo di conversione termo-elettrica bidirezionale ad effetto seebeck/peltier impiegante nanofili di materiale conduttore o semiconduttore.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070275516A1 (en) * 2004-02-10 2007-11-29 Satoshi Eguchi Manufacturing Method of Semiconductor Device
WO2011073142A1 (en) * 2009-12-15 2011-06-23 Universita' Degli Studi Di Milano - Bicocca Seebeck/peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process

Also Published As

Publication number Publication date
EP2751853A1 (en) 2014-07-09
EP2751853B1 (en) 2015-09-23
US9269881B2 (en) 2016-02-23
US20150083178A1 (en) 2015-03-26
WO2013030763A1 (en) 2013-03-07

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