ITMI20051308A1 - Metodo e reattore per crescere cristalli - Google Patents

Metodo e reattore per crescere cristalli

Info

Publication number
ITMI20051308A1
ITMI20051308A1 IT001308A ITMI20051308A ITMI20051308A1 IT MI20051308 A1 ITMI20051308 A1 IT MI20051308A1 IT 001308 A IT001308 A IT 001308A IT MI20051308 A ITMI20051308 A IT MI20051308A IT MI20051308 A1 ITMI20051308 A1 IT MI20051308A1
Authority
IT
Italy
Prior art keywords
reactor
grow crystals
crystals
grow
Prior art date
Application number
IT001308A
Other languages
English (en)
Inventor
Maurizio Masi
Original Assignee
Milano Politecnico
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Milano Politecnico filed Critical Milano Politecnico
Priority to IT001308A priority Critical patent/ITMI20051308A1/it
Priority to EP06762513A priority patent/EP1907609A1/en
Priority to JP2008520768A priority patent/JP2009500287A/ja
Priority to US11/995,314 priority patent/US20090305484A1/en
Priority to PCT/EP2006/006723 priority patent/WO2007006525A1/en
Publication of ITMI20051308A1 publication Critical patent/ITMI20051308A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
IT001308A 2005-07-11 2005-07-11 Metodo e reattore per crescere cristalli ITMI20051308A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT001308A ITMI20051308A1 (it) 2005-07-11 2005-07-11 Metodo e reattore per crescere cristalli
EP06762513A EP1907609A1 (en) 2005-07-11 2006-07-10 Method and reactor for growing crystals
JP2008520768A JP2009500287A (ja) 2005-07-11 2006-07-10 結晶成長のための方法およびリアクター
US11/995,314 US20090305484A1 (en) 2005-07-11 2006-07-10 Method and reactor for growing crystals
PCT/EP2006/006723 WO2007006525A1 (en) 2005-07-11 2006-07-10 Method and reactor for growing crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001308A ITMI20051308A1 (it) 2005-07-11 2005-07-11 Metodo e reattore per crescere cristalli

Publications (1)

Publication Number Publication Date
ITMI20051308A1 true ITMI20051308A1 (it) 2007-01-12

Family

ID=37103257

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001308A ITMI20051308A1 (it) 2005-07-11 2005-07-11 Metodo e reattore per crescere cristalli

Country Status (5)

Country Link
US (1) US20090305484A1 (it)
EP (1) EP1907609A1 (it)
JP (1) JP2009500287A (it)
IT (1) ITMI20051308A1 (it)
WO (1) WO2007006525A1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1392068B1 (it) * 2008-11-24 2012-02-09 Lpe Spa Camera di reazione di un reattore epitassiale
CN103975417B (zh) * 2011-11-10 2017-09-01 圣戈班晶体及检测公司 用于半导体晶体材料形成的***
JP6052051B2 (ja) * 2013-05-16 2016-12-27 株式会社デンソー 炭化珪素単結晶の製造装置
US9580837B2 (en) * 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
CN104805500B (zh) * 2015-04-09 2017-04-19 江苏盎华光伏工程技术研究中心有限公司 采用氧化层辅助的硅片制作设备及其控制方法
CN112164739B (zh) * 2020-09-28 2021-10-08 华灿光电(苏州）有限公司 微型发光二极管外延片的生长方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354823A (en) * 1981-01-19 1982-10-19 Slyman Manufacturing Corporation Non-air cooled radiant burner
US5215788A (en) * 1990-07-06 1993-06-01 Kabushiki Kaisha Toyota Chuo Kenkyusho Combustion flame method for forming diamond films
JP3519406B2 (ja) * 1993-03-24 2004-04-12 ジョージア テック リサーチ コーポレイション フィルム及びコーティングの燃焼化学蒸着の方法
SE9603586D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
US6368665B1 (en) * 1998-04-29 2002-04-09 Microcoating Technologies, Inc. Apparatus and process for controlled atmosphere chemical vapor deposition
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio

Also Published As

Publication number Publication date
US20090305484A1 (en) 2009-12-10
WO2007006525A1 (en) 2007-01-18
JP2009500287A (ja) 2009-01-08
EP1907609A1 (en) 2008-04-09

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