IT994398B - IMPROVEMENT IN LIGHT EMITTING DIODES FOR LOW TEMPERATURE AND LOW VOLTAGE OPERATION - Google Patents

IMPROVEMENT IN LIGHT EMITTING DIODES FOR LOW TEMPERATURE AND LOW VOLTAGE OPERATION

Info

Publication number
IT994398B
IT994398B IT53070/73A IT5307073A IT994398B IT 994398 B IT994398 B IT 994398B IT 53070/73 A IT53070/73 A IT 53070/73A IT 5307073 A IT5307073 A IT 5307073A IT 994398 B IT994398 B IT 994398B
Authority
IT
Italy
Prior art keywords
anode
phosphor
zno
work function
oct
Prior art date
Application number
IT53070/73A
Other languages
Italian (it)
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/396,003 external-priority patent/US4081764A/en
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Application granted granted Critical
Publication of IT994398B publication Critical patent/IT994398B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

1454085 Luminescent materials and uses thereof MINNESOTA MINING & MFG CO 11 Oct 1973 [12 Oct 1972 10 Sept 1973] 47612/73 Heading C4S [Also in Division H1] An L.E.D. comprises a single crystal of ZnO which exhibits a fluorescent efficiency of not less than 0.001 in a band between 3700Š and 4000Š at 77‹ K., and includes a substantially ohmic cathode 36 and a rectifying anode 34, the diode emitting violet light at room temperature. The cathode may be of low work function In, or Zn or tin oxide and/or indium oxide and preferably of work function # the work function of ZnO. The anode may be high work Cu, Ag, Au, Pt or C and ultra-violet responsive phosphor 30 may convert the L.E.D. emission. Jig 38 facilitates contact formation. Fig. 4 (not shown) is a coherent radiation source with reflector layers (60), (62), and Au anode (64). Mechanisms are discussed including decay of free excitons, and donors are provided to compensate acceptor concentration of <10 p.p.m. by heating in the presence of ZnS for example for Zn diffusion, followed by quenching. Crystals may be thin slabs from a single crystal or naturally grown and selected by laser or Hg arc excitation according to efficiency. Operation may be A.C. or D.C., the resistivity may be 1 # cm. for 10<SP>17</SP> electrons/c.c. and reduction of acceptor states provided by Li and Na and in amount <10<SP>16</SP>/c.c. is disclosed. Crystal orientation is discussed and surfaces preferably shaped to minimize internal reflection and to focus. Green fluorescence of as grown ZnO may be countered by excess Zn doping and removal of an outer layer. Detailed examples specify voltages and current densities, band gaps, dimensions and further electrode details, including as examples only, a plurality of point contacts provided by Au particles in silicate binder, Au needles with blue ZnS phosphor on the opposite crystal face, four anode dots, gold paste over a blue organic phosphor on the oxygen face, the same phosphor on the opposite face increasing brightness, Au coated silica, rough 10Á Au spheres, and cleaved or otherwise mechanically deformed evaporated films. Applications are specified. Reference is included to Specification 1,452,515.
IT53070/73A 1972-10-12 1973-10-11 IMPROVEMENT IN LIGHT EMITTING DIODES FOR LOW TEMPERATURE AND LOW VOLTAGE OPERATION IT994398B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29683772A 1972-10-12 1972-10-12
US05/396,003 US4081764A (en) 1972-10-12 1973-09-10 Zinc oxide light emitting diode

Publications (1)

Publication Number Publication Date
IT994398B true IT994398B (en) 1975-10-20

Family

ID=26969841

Family Applications (1)

Application Number Title Priority Date Filing Date
IT53070/73A IT994398B (en) 1972-10-12 1973-10-11 IMPROVEMENT IN LIGHT EMITTING DIODES FOR LOW TEMPERATURE AND LOW VOLTAGE OPERATION

Country Status (7)

Country Link
JP (1) JPS4994293A (en)
CA (1) CA1011862A (en)
CH (1) CH569366A5 (en)
DE (1) DE2350911A1 (en)
FR (1) FR2203255B1 (en)
GB (1) GB1454085A (en)
IT (1) IT994398B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100643442B1 (en) 1996-06-26 2006-11-10 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 Light-emitting semiconductor component with luminescence conversion element
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
WO2000016411A1 (en) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
CN114477993A (en) * 2022-01-24 2022-05-13 仲恺农业工程学院 ZnO material and basic property research method and application thereof

Also Published As

Publication number Publication date
JPS4994293A (en) 1974-09-06
FR2203255B1 (en) 1976-11-19
DE2350911A1 (en) 1974-04-18
FR2203255A1 (en) 1974-05-10
CA1011862A (en) 1977-06-07
GB1454085A (en) 1976-10-27
CH569366A5 (en) 1975-11-14

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