IT938972B - Disposizione di semiconduttori fotosensibile - Google Patents

Disposizione di semiconduttori fotosensibile

Info

Publication number
IT938972B
IT938972B IT29567/71A IT2956771A IT938972B IT 938972 B IT938972 B IT 938972B IT 29567/71 A IT29567/71 A IT 29567/71A IT 2956771 A IT2956771 A IT 2956771A IT 938972 B IT938972 B IT 938972B
Authority
IT
Italy
Prior art keywords
arrangement
photosensitive semiconductors
semiconductors
photosensitive
Prior art date
Application number
IT29567/71A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT938972B publication Critical patent/IT938972B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
IT29567/71A 1970-10-08 1971-10-06 Disposizione di semiconduttori fotosensibile IT938972B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049507A DE2049507C3 (de) 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung

Publications (1)

Publication Number Publication Date
IT938972B true IT938972B (it) 1973-02-10

Family

ID=5784573

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29567/71A IT938972B (it) 1970-10-08 1971-10-06 Disposizione di semiconduttori fotosensibile

Country Status (11)

Country Link
US (1) US3760240A (it)
JP (1) JPS5513148B1 (it)
AT (1) AT313996B (it)
CA (1) CA946501A (it)
CH (1) CH528151A (it)
DE (1) DE2049507C3 (it)
FR (1) FR2110259B1 (it)
GB (1) GB1320822A (it)
IT (1) IT938972B (it)
NL (1) NL7113857A (it)
SE (1) SE362985B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
JPS5120277B2 (it) * 1972-08-17 1976-06-23
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
US3948682A (en) * 1974-10-31 1976-04-06 Ninel Mineevna Bordina Semiconductor photoelectric generator
US3988613A (en) * 1975-05-02 1976-10-26 General Electric Company Radiation sensing and charge storage devices
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
DE3883526T2 (de) * 1987-11-23 1994-03-03 Santa Barbara Res Center Verfahren und vorrichtung zur detektion von infrarotstrahlung.
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
JP2000150652A (ja) * 1998-09-03 2000-05-30 Seiko Epson Corp 半導体装置およびその製造方法
WO2011075579A1 (en) * 2009-12-18 2011-06-23 First Solar, Inc. Photovoltaic device including doped layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
NL6816923A (it) * 1968-11-27 1970-05-29

Also Published As

Publication number Publication date
DE2049507B2 (de) 1979-03-08
DE2049507C3 (de) 1979-11-08
JPS5513148B1 (it) 1980-04-07
GB1320822A (en) 1973-06-20
AT313996B (de) 1974-03-11
DE2049507A1 (de) 1972-04-13
CA946501A (en) 1974-04-30
NL7113857A (it) 1972-04-11
FR2110259B1 (it) 1977-04-22
CH528151A (de) 1972-09-15
FR2110259A1 (it) 1972-06-02
SE362985B (it) 1973-12-27
US3760240A (en) 1973-09-18

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