IT8520336A0 - Dispositivo a semiconduttori con filo di collegamento elettrico perfezionato. - Google Patents

Dispositivo a semiconduttori con filo di collegamento elettrico perfezionato.

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Publication number
IT8520336A0
IT8520336A0 IT8520336A IT2033685A IT8520336A0 IT 8520336 A0 IT8520336 A0 IT 8520336A0 IT 8520336 A IT8520336 A IT 8520336A IT 2033685 A IT2033685 A IT 2033685A IT 8520336 A0 IT8520336 A0 IT 8520336A0
Authority
IT
Italy
Prior art keywords
semiconductor device
electrical connection
connection wire
improved electrical
improved
Prior art date
Application number
IT8520336A
Other languages
English (en)
Other versions
IT1184445B (it
Inventor
Susumu Okikawa
Hiroshi Mikino
Hiromichi Suziki
Wahei Kitamura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8520336A0 publication Critical patent/IT8520336A0/it
Application granted granted Critical
Publication of IT1184445B publication Critical patent/IT1184445B/it

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
IT20336/85A 1984-04-19 1985-04-15 Dispositivo a semiconduttori con filo di collegamento elettrico perfezionato IT1184445B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079113A JPS60223149A (ja) 1984-04-19 1984-04-19 半導体装置

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IT8520336A0 true IT8520336A0 (it) 1985-04-15
IT1184445B IT1184445B (it) 1987-10-28

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KR (1) KR930008979B1 (it)
DE (1) DE3514253A1 (it)
FR (2) FR2563380B1 (it)
GB (1) GB2157607B (it)
HK (2) HK40190A (it)
IT (1) IT1184445B (it)
MY (1) MY102548A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法
JPH0736431B2 (ja) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 半導体装置のボンディングワイヤ用高純度銅の製造法
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP4519775B2 (ja) 2004-01-29 2010-08-04 日鉱金属株式会社 超高純度銅及びその製造方法
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
EP2133915A1 (de) 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
CN115966478A (zh) * 2021-10-11 2023-04-14 恩智浦美国有限公司 半导体器件和封装的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
DE1295844B (de) * 1965-03-30 1969-05-22 Nielsen Verwendung einer Kupferlegierung fuer Fahrdraehte
FR1524436A (fr) * 1966-04-14 1968-05-10 Philips Nv Dispositif semi-conducteur et circuit équipé d'un tel dispositif
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
FR1536483A (fr) * 1967-07-17 1968-08-16 British Insulated Callenders Procédé de production d'éléments en cuivre ayant une résistance mécanique élevée et une conductivité élevée
DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
DE2752655A1 (de) * 1977-09-23 1979-06-07 Blaupunkt Werke Gmbh Elektronisches bauelement
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
NL184184C (nl) * 1981-03-20 1989-05-01 Philips Nv Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.
JPS59155161A (ja) * 1983-02-23 1984-09-04 Daiichi Denko Kk 半導体素子のボンデイング用ワイヤ
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

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MY102548A (en) 1992-07-31
DE3514253A1 (de) 1985-10-31
KR930008979B1 (ko) 1993-09-17
FR2563380A1 (fr) 1985-10-25
GB8503143D0 (en) 1985-03-13
GB2157607A (en) 1985-10-30
FR2563381A1 (fr) 1985-10-25
KR850008244A (ko) 1985-12-13
JPS60223149A (ja) 1985-11-07
FR2563380B1 (fr) 1987-02-27
HK40190A (en) 1990-06-01
IT1184445B (it) 1987-10-28
HK40390A (en) 1990-06-01
GB2157607B (en) 1988-09-28

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