IT8467858A1 - Trasduttore fotoelettrico. - Google Patents

Trasduttore fotoelettrico.

Info

Publication number
IT8467858A1
IT8467858A1 IT1984A67858A IT6785884A IT8467858A1 IT 8467858 A1 IT8467858 A1 IT 8467858A1 IT 1984A67858 A IT1984A67858 A IT 1984A67858A IT 6785884 A IT6785884 A IT 6785884A IT 8467858 A1 IT8467858 A1 IT 8467858A1
Authority
IT
Italy
Prior art keywords
photoelectric transducer
photoelectric
transducer
Prior art date
Application number
IT1984A67858A
Other languages
English (en)
Other versions
IT8467858A0 (it
IT1179083B (it
Original Assignee
Taiyo Yuden Kk
The President Of Kogyo Gijutsuin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Kk, The President Of Kogyo Gijutsuin filed Critical Taiyo Yuden Kk
Publication of IT8467858A0 publication Critical patent/IT8467858A0/it
Publication of IT8467858A1 publication Critical patent/IT8467858A1/it
Application granted granted Critical
Publication of IT1179083B publication Critical patent/IT1179083B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
IT67858/84A 1983-08-29 1984-08-28 Trasduttore fotoelettrico IT1179083B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157489A JPH0680837B2 (ja) 1983-08-29 1983-08-29 光路を延長した光電変換素子

Publications (3)

Publication Number Publication Date
IT8467858A0 IT8467858A0 (it) 1984-08-28
IT8467858A1 true IT8467858A1 (it) 1986-02-28
IT1179083B IT1179083B (it) 1987-09-16

Family

ID=15650799

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67858/84A IT1179083B (it) 1983-08-29 1984-08-28 Trasduttore fotoelettrico

Country Status (5)

Country Link
US (1) US4644091A (it)
JP (1) JPH0680837B2 (it)
DE (1) DE3431603C2 (it)
FR (1) FR2551267B1 (it)
IT (1) IT1179083B (it)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068663A (ja) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池
DE3446807A1 (de) * 1984-12-21 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Duennschichtsolarzelle mit n-i-p-struktur
US4683160A (en) * 1985-05-09 1987-07-28 Exxon Research And Engineering Company Solar cells with correlated roughness substrate
US4929524A (en) * 1986-09-12 1990-05-29 Canon Kabushiki Kaisha Organic photo conductive medium
US5024953A (en) * 1988-03-22 1991-06-18 Hitachi, Ltd. Method for producing opto-electric transducing element
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
DE4124795C2 (de) * 1990-07-27 1994-12-22 Fraunhofer Ges Forschung Verwendung eines Solarmoduls
JPH0793450B2 (ja) * 1990-09-19 1995-10-09 株式会社日立製作所 コルゲート型太陽電池
US5098482A (en) * 1990-11-07 1992-03-24 Solarex Corporation Vertical junction solar cell
US5272356A (en) * 1991-11-12 1993-12-21 Hughes Aircraft Company Multiple quantum well photodetector for normal incident radiation
US5261970A (en) * 1992-04-08 1993-11-16 Sverdrup Technology, Inc. Optoelectronic and photovoltaic devices with low-reflectance surfaces
DE69811511T2 (de) * 1997-03-21 2004-02-19 Sanyo Electric Co., Ltd., Moriguchi Herstellungsverfahren für ein photovoltaisches bauelement
JPH1168158A (ja) 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
AUPP699798A0 (en) * 1998-11-06 1998-12-03 Pacific Solar Pty Limited Thin films with light trapping
DE10040459A1 (de) * 2000-08-18 2002-03-21 Infineon Technologies Ag PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US7888594B2 (en) 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
JP2011515866A (ja) * 2008-03-25 2011-05-19 コーニング インコーポレイテッド 太陽光発電用基板
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
JP5618465B2 (ja) * 2008-05-29 2014-11-05 京セラ株式会社 薄膜太陽電池モジュール
EP2161758A1 (en) * 2008-09-05 2010-03-10 Flexucell ApS Solar cell and method for the production thereof
US8022291B2 (en) 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US20110126890A1 (en) * 2009-11-30 2011-06-02 Nicholas Francis Borrelli Textured superstrates for photovoltaics
US8663732B2 (en) * 2010-02-26 2014-03-04 Corsam Technologies Llc Light scattering inorganic substrates using monolayers
CN111883667B (zh) * 2020-08-28 2022-06-10 电子科技大学 一种基于负热膨胀效应的柔性光电探测器及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4162928A (en) * 1978-09-29 1979-07-31 Nasa Solar cell module
US4202704A (en) * 1978-12-13 1980-05-13 International Business Machines Corporation Optical energy conversion
JP60041878B2 (en) * 1979-02-14 1985-09-19 Sharp Kk Thin film solar cell
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
JPS5749278A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Amorphous silicone solar cell
DE3048381C2 (de) * 1980-12-22 1985-09-05 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Dünnschicht-Solarzelle
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
CA1209681A (en) * 1982-08-04 1986-08-12 Exxon Research And Engineering Company Optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
JPS59123283A (ja) * 1982-12-28 1984-07-17 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS59127879A (ja) * 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法

Also Published As

Publication number Publication date
JPH0680837B2 (ja) 1994-10-12
IT8467858A0 (it) 1984-08-28
DE3431603A1 (de) 1985-03-14
IT1179083B (it) 1987-09-16
DE3431603C2 (de) 1994-07-07
FR2551267A1 (fr) 1985-03-01
JPS6049679A (ja) 1985-03-18
US4644091A (en) 1987-02-17
FR2551267B1 (fr) 1987-08-28

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940831