IT8148201A0 - Velatori di pressione al silicio perfezionamento nei dispositivi ri - Google Patents

Velatori di pressione al silicio perfezionamento nei dispositivi ri

Info

Publication number
IT8148201A0
IT8148201A0 IT8148201A IT4820181A IT8148201A0 IT 8148201 A0 IT8148201 A0 IT 8148201A0 IT 8148201 A IT8148201 A IT 8148201A IT 4820181 A IT4820181 A IT 4820181A IT 8148201 A0 IT8148201 A0 IT 8148201A0
Authority
IT
Italy
Prior art keywords
improvement
devices
pressure sensors
silicon pressure
silicon
Prior art date
Application number
IT8148201A
Other languages
English (en)
Other versions
IT1142466B (it
Inventor
John E Gragg Jr
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8148201A0 publication Critical patent/IT8148201A0/it
Application granted granted Critical
Publication of IT1142466B publication Critical patent/IT1142466B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
IT48201/81A 1980-04-14 1981-04-03 Perfezionamento nei dispositivi rivelatori di pressione al silicio IT1142466B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/140,289 US4317126A (en) 1980-04-14 1980-04-14 Silicon pressure sensor

Publications (2)

Publication Number Publication Date
IT8148201A0 true IT8148201A0 (it) 1981-04-03
IT1142466B IT1142466B (it) 1986-10-08

Family

ID=22490586

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48201/81A IT1142466B (it) 1980-04-14 1981-04-03 Perfezionamento nei dispositivi rivelatori di pressione al silicio

Country Status (7)

Country Link
US (1) US4317126A (it)
EP (1) EP0050136A4 (it)
JP (1) JPS57500491A (it)
KR (1) KR840002283B1 (it)
BR (1) BR8108314A (it)
IT (1) IT1142466B (it)
WO (1) WO1981003086A1 (it)

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US6266623B1 (en) 1994-11-21 2001-07-24 Phatrat Technology, Inc. Sport monitoring apparatus for determining loft time, speed, power absorbed and other factors such as height
US8280682B2 (en) * 2000-12-15 2012-10-02 Tvipr, Llc Device for monitoring movement of shipped goods
US7386401B2 (en) 1994-11-21 2008-06-10 Phatrat Technology, Llc Helmet that reports impact information, and associated methods
US6516284B2 (en) * 1994-11-21 2003-02-04 Phatrat Technology, Inc. Speedometer for a moving sportsman
DE19528961C2 (de) 1995-08-08 1998-10-29 Daimler Benz Ag Mikromechanischer Drehratensensor (DRS) und Sensoranordnung
US5759870A (en) * 1995-08-28 1998-06-02 Bei Electronics, Inc. Method of making a surface micro-machined silicon pressure sensor
US5993395A (en) * 1996-04-18 1999-11-30 Sunscope International Inc. Pressure transducer apparatus with disposable dome
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US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
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US6622558B2 (en) 2000-11-30 2003-09-23 Orbital Research Inc. Method and sensor for detecting strain using shape memory alloys
US7171331B2 (en) 2001-12-17 2007-01-30 Phatrat Technology, Llc Shoes employing monitoring devices, and associated methods
US6732422B1 (en) * 2002-01-04 2004-05-11 Taiwan Semiconductor Manufacturing Company Method of forming resistors
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US6772509B2 (en) 2002-01-28 2004-08-10 Motorola, Inc. Method of separating and handling a thin semiconductor die on a wafer
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US8073984B2 (en) * 2006-05-22 2011-12-06 Apple Inc. Communication protocol for use with portable electronic devices
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US8525279B2 (en) * 2009-06-04 2013-09-03 University Of Louisville Research Foundation, Inc. Single element three terminal piezoresistive pressure sensor
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US9136136B2 (en) 2013-09-19 2015-09-15 Infineon Technologies Dresden Gmbh Method and structure for creating cavities with extreme aspect ratios
US9798132B2 (en) * 2014-06-17 2017-10-24 Infineon Technologies Ag Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices
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CN113227954A (zh) * 2018-12-20 2021-08-06 深圳纽迪瑞科技开发有限公司 压力感应装置、压力感应方法及电子终端

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Also Published As

Publication number Publication date
US4317126A (en) 1982-02-23
KR840002283B1 (ko) 1984-12-14
EP0050136A1 (en) 1982-04-28
BR8108314A (pt) 1982-03-09
WO1981003086A1 (en) 1981-10-29
KR830005684A (ko) 1983-09-09
EP0050136A4 (en) 1984-07-03
JPS57500491A (it) 1982-03-18
IT1142466B (it) 1986-10-08

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