IT7969474A0 - Memoria a semiconduttori a circuito integrato - Google Patents
Memoria a semiconduttori a circuito integratoInfo
- Publication number
- IT7969474A0 IT7969474A0 IT7969474A IT6947479A IT7969474A0 IT 7969474 A0 IT7969474 A0 IT 7969474A0 IT 7969474 A IT7969474 A IT 7969474A IT 6947479 A IT6947479 A IT 6947479A IT 7969474 A0 IT7969474 A0 IT 7969474A0
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- semiconductor memory
- circuit semiconductor
- memory
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/001,712 US4214312A (en) | 1979-01-08 | 1979-01-08 | VMOS Field aligned dynamic ram cell |
Publications (1)
Publication Number | Publication Date |
---|---|
IT7969474A0 true IT7969474A0 (it) | 1979-12-24 |
Family
ID=21697449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7969474A IT7969474A0 (it) | 1979-01-08 | 1979-12-24 | Memoria a semiconduttori a circuito integrato |
Country Status (8)
Country | Link |
---|---|
US (1) | US4214312A (it) |
JP (1) | JPS5593253A (it) |
CA (1) | CA1133135A (it) |
DE (1) | DE3000120A1 (it) |
FR (1) | FR2446012A1 (it) |
GB (1) | GB2040565A (it) |
IT (1) | IT7969474A0 (it) |
NL (1) | NL7908313A (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4462040A (en) * | 1979-05-07 | 1984-07-24 | International Business Machines Corporation | Single electrode U-MOSFET random access memory |
US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
JPS5834946B2 (ja) * | 1980-10-16 | 1983-07-29 | 三菱電機株式会社 | 半導体記憶装置 |
JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−mosfet |
JPH0695566B2 (ja) * | 1986-09-12 | 1994-11-24 | 日本電気株式会社 | 半導体メモリセル |
FR2919112A1 (fr) * | 2007-07-16 | 2009-01-23 | St Microelectronics Crolles 2 | Circuit integre comprenant un transistor et un condensateur et procede de fabrication |
US9691898B2 (en) | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
US9287398B2 (en) | 2014-02-14 | 2016-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor strain-inducing scheme |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
-
1979
- 1979-01-08 US US06/001,712 patent/US4214312A/en not_active Expired - Lifetime
- 1979-11-07 CA CA339,344A patent/CA1133135A/en not_active Expired
- 1979-11-14 NL NL7908313A patent/NL7908313A/nl not_active Application Discontinuation
- 1979-11-28 GB GB7941126A patent/GB2040565A/en not_active Withdrawn
- 1979-12-20 JP JP16495279A patent/JPS5593253A/ja active Pending
- 1979-12-24 IT IT7969474A patent/IT7969474A0/it unknown
-
1980
- 1980-01-03 DE DE19803000120 patent/DE3000120A1/de not_active Withdrawn
- 1980-01-07 FR FR8000236A patent/FR2446012A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE3000120A1 (de) | 1980-07-24 |
FR2446012A1 (fr) | 1980-08-01 |
NL7908313A (nl) | 1980-07-10 |
CA1133135A (en) | 1982-10-05 |
GB2040565A (en) | 1980-08-28 |
US4214312A (en) | 1980-07-22 |
JPS5593253A (en) | 1980-07-15 |
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