IT7969474A0 - Memoria a semiconduttori a circuito integrato - Google Patents

Memoria a semiconduttori a circuito integrato

Info

Publication number
IT7969474A0
IT7969474A0 IT7969474A IT6947479A IT7969474A0 IT 7969474 A0 IT7969474 A0 IT 7969474A0 IT 7969474 A IT7969474 A IT 7969474A IT 6947479 A IT6947479 A IT 6947479A IT 7969474 A0 IT7969474 A0 IT 7969474A0
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor memory
circuit semiconductor
memory
integrated
Prior art date
Application number
IT7969474A
Other languages
English (en)
Inventor
Gideon David Amir
Original Assignee
American Micro Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Micro Syst filed Critical American Micro Syst
Publication of IT7969474A0 publication Critical patent/IT7969474A0/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
IT7969474A 1979-01-08 1979-12-24 Memoria a semiconduttori a circuito integrato IT7969474A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/001,712 US4214312A (en) 1979-01-08 1979-01-08 VMOS Field aligned dynamic ram cell

Publications (1)

Publication Number Publication Date
IT7969474A0 true IT7969474A0 (it) 1979-12-24

Family

ID=21697449

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7969474A IT7969474A0 (it) 1979-01-08 1979-12-24 Memoria a semiconduttori a circuito integrato

Country Status (8)

Country Link
US (1) US4214312A (it)
JP (1) JPS5593253A (it)
CA (1) CA1133135A (it)
DE (1) DE3000120A1 (it)
FR (1) FR2446012A1 (it)
GB (1) GB2040565A (it)
IT (1) IT7969474A0 (it)
NL (1) NL7908313A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
JPS5834946B2 (ja) * 1980-10-16 1983-07-29 三菱電機株式会社 半導体記憶装置
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−mosfet
JPH0695566B2 (ja) * 1986-09-12 1994-11-24 日本電気株式会社 半導体メモリセル
FR2919112A1 (fr) * 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
US9691898B2 (en) 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US9287398B2 (en) 2014-02-14 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor strain-inducing scheme

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element

Also Published As

Publication number Publication date
DE3000120A1 (de) 1980-07-24
FR2446012A1 (fr) 1980-08-01
NL7908313A (nl) 1980-07-10
CA1133135A (en) 1982-10-05
GB2040565A (en) 1980-08-28
US4214312A (en) 1980-07-22
JPS5593253A (en) 1980-07-15

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