IT1403323B1 - Transistore ad effetto di campo, sensibile al gas, e procedimento per la sua fabbricazione - Google Patents

Transistore ad effetto di campo, sensibile al gas, e procedimento per la sua fabbricazione

Info

Publication number
IT1403323B1
IT1403323B1 ITMI2011A000153A ITMI20110153A IT1403323B1 IT 1403323 B1 IT1403323 B1 IT 1403323B1 IT MI2011A000153 A ITMI2011A000153 A IT MI2011A000153A IT MI20110153 A ITMI20110153 A IT MI20110153A IT 1403323 B1 IT1403323 B1 IT 1403323B1
Authority
IT
Italy
Prior art keywords
manufacturing
field effect
effect transistor
gas sensitive
sensitive
Prior art date
Application number
ITMI2011A000153A
Other languages
English (en)
Inventor
Martin Le-Huu
Andreas Krauss
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI20110153A1 publication Critical patent/ITMI20110153A1/it
Application granted granted Critical
Publication of IT1403323B1 publication Critical patent/IT1403323B1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ITMI2011A000153A 2010-02-16 2011-02-04 Transistore ad effetto di campo, sensibile al gas, e procedimento per la sua fabbricazione IT1403323B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010001998A DE102010001998A1 (de) 2010-02-16 2010-02-16 Gassensitiver Feldeffekttransistor und Verfahren zur Herstellung eines gassensitiven Feldeffekttransistors

Publications (2)

Publication Number Publication Date
ITMI20110153A1 ITMI20110153A1 (it) 2011-08-17
IT1403323B1 true IT1403323B1 (it) 2013-10-17

Family

ID=43976060

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2011A000153A IT1403323B1 (it) 2010-02-16 2011-02-04 Transistore ad effetto di campo, sensibile al gas, e procedimento per la sua fabbricazione

Country Status (5)

Country Link
US (1) US20110198674A1 (it)
CN (1) CN102192940A (it)
DE (1) DE102010001998A1 (it)
FR (1) FR2956483B1 (it)
IT (1) IT1403323B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009045475B4 (de) * 2009-10-08 2023-06-29 Robert Bosch Gmbh Gassensitive Halbleitervorrichtung sowie deren Verwendung
US9501601B2 (en) * 2013-03-14 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout optimization of a main pattern and a cut pattern
JP2017516994A (ja) * 2014-06-03 2017-06-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 化学感応性電界効果トランジスタセンサ
JP6382768B2 (ja) * 2015-04-30 2018-08-29 日本特殊陶業株式会社 ガスセンサ素子、ガスセンサ、および、ガスセンサ素子の製造方法
CN112505108B (zh) * 2020-12-18 2021-07-06 联合微电子中心有限责任公司 气体检测***和方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045368B2 (ja) * 1977-12-08 1985-10-09 セイコーエプソン株式会社 半導体ガスセンサ
GB8522785D0 (en) * 1985-09-14 1985-10-16 Emi Plc Thorn Chemical-sensitive semiconductor device
US6140144A (en) * 1996-08-08 2000-10-31 Integrated Sensing Systems, Inc. Method for packaging microsensors

Also Published As

Publication number Publication date
ITMI20110153A1 (it) 2011-08-17
FR2956483A1 (fr) 2011-08-19
CN102192940A (zh) 2011-09-21
FR2956483B1 (fr) 2013-12-06
US20110198674A1 (en) 2011-08-18
DE102010001998A1 (de) 2011-08-18

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