IT1396332B1 - Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. - Google Patents
Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.Info
- Publication number
- IT1396332B1 IT1396332B1 ITVA2009A000062A ITVA20090062A IT1396332B1 IT 1396332 B1 IT1396332 B1 IT 1396332B1 IT VA2009A000062 A ITVA2009A000062 A IT VA2009A000062A IT VA20090062 A ITVA20090062 A IT VA20090062A IT 1396332 B1 IT1396332 B1 IT 1396332B1
- Authority
- IT
- Italy
- Prior art keywords
- photodiod
- deployment
- images
- detection
- data output
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2009A000062A IT1396332B1 (it) | 2009-10-02 | 2009-10-02 | Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. |
US12/895,081 US8264019B2 (en) | 2009-10-02 | 2010-09-30 | Multiplexed output two terminal photodiode array for imaging applications and related fabrication process |
US13/534,801 US8338219B2 (en) | 2009-10-02 | 2012-06-27 | Multiplexed output two terminal photodiode array for imaging applications and related fabrication process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2009A000062A IT1396332B1 (it) | 2009-10-02 | 2009-10-02 | Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. |
Publications (2)
Publication Number | Publication Date |
---|---|
ITVA20090062A1 ITVA20090062A1 (it) | 2011-04-03 |
IT1396332B1 true IT1396332B1 (it) | 2012-11-16 |
Family
ID=42130924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITVA2009A000062A IT1396332B1 (it) | 2009-10-02 | 2009-10-02 | Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. |
Country Status (2)
Country | Link |
---|---|
US (2) | US8264019B2 (it) |
IT (1) | IT1396332B1 (it) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8487396B2 (en) | 2009-06-01 | 2013-07-16 | Stmicroelectronics S.R.L. | Trench sidewall contact Schottky photodiode and related method of fabrication |
IT1401623B1 (it) * | 2010-08-12 | 2013-07-26 | St Microelectronics Srl | Diodo schottky multibanda |
US20110095192A1 (en) * | 2009-10-26 | 2011-04-28 | Johnson Kurtis F | Method to increase dynamic range of segmented non-linear devices |
EP2375242A1 (en) | 2010-04-06 | 2011-10-12 | FOM Institute for Atomic and Moleculair Physics | Integrated plasmonic nanocavity sensing device |
US8358419B2 (en) * | 2011-04-05 | 2013-01-22 | Integrated Plasmonics Corporation | Integrated plasmonic sensing device and apparatus |
US9343497B2 (en) * | 2012-09-20 | 2016-05-17 | Semiconductor Components Industries, Llc | Imagers with stacked integrated circuit dies |
CN104051488B (zh) * | 2013-03-14 | 2019-06-14 | 马克西姆综合产品公司 | 光学传感器 |
US9431440B2 (en) * | 2013-03-14 | 2016-08-30 | Maxim Integrated Products, Inc. | Optical sensor |
ITTO20130398A1 (it) * | 2013-05-16 | 2014-11-17 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger includente una struttura di confinamento elettro-ottico per la riduzione dell'interferenza, e schiera di fotodiodi |
US8941145B2 (en) | 2013-06-17 | 2015-01-27 | The Boeing Company | Systems and methods for dry etching a photodetector array |
US9466631B2 (en) * | 2014-05-13 | 2016-10-11 | Stmicroelectronics S.R.L. | Solid state photomultipliers array of enhanced fill factor and simplified packaging |
US9685576B2 (en) * | 2014-10-03 | 2017-06-20 | Omnivision Technologies, Inc. | Back side illuminated image sensor with guard ring region reflecting structure |
US9685575B2 (en) * | 2015-03-06 | 2017-06-20 | Stmicroelectronics S.R.L. | Multiband double junction photodiode and related manufacturing process |
JP6544440B2 (ja) * | 2015-11-19 | 2019-07-17 | 株式会社島津製作所 | 半導体検出器 |
EP3430648B1 (en) * | 2016-03-15 | 2020-09-23 | Dartmouth College | Stacked backside-illuminated quanta image sensor with cluster-parallel readout |
US10043936B1 (en) * | 2016-10-27 | 2018-08-07 | Semiconductor Components Industries, Llc | Avalanche diode, and a process of manufacturing an avalanche diode |
US10636930B2 (en) * | 2017-09-29 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
DE102018122925A1 (de) * | 2017-09-29 | 2019-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spad image sensor and associated fabricating method |
CN108695398B (zh) * | 2017-11-30 | 2020-08-25 | 中芯集成电路(宁波)有限公司 | 肖特基的光探测器及其形成方法 |
IT201800007231A1 (it) | 2018-07-16 | 2020-01-16 | Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione | |
CN109524486B (zh) * | 2018-09-28 | 2022-09-23 | 暨南大学 | 一种电读出光学传感器 |
US10784300B1 (en) * | 2019-04-16 | 2020-09-22 | Visera Technologies Company Limited | Solid-state imaging devices |
CN111653632B (zh) * | 2020-06-15 | 2022-05-10 | 京东方科技集团股份有限公司 | 光电探测器及其制备方法、触控基板和显示面板 |
CN113325459B (zh) * | 2021-05-28 | 2024-04-12 | 京东方科技集团股份有限公司 | 平板探测器及其制备方法、摄影设备 |
CN117855339B (zh) * | 2024-03-05 | 2024-05-14 | 山西创芯光电科技有限公司 | 一种完全去除衬底的超晶格红外探测器制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751159A (en) * | 1995-09-05 | 1998-05-12 | Motorola, Inc. | Semiconductor array and switches formed on a common substrate for array testing purposes |
JPWO2007105593A1 (ja) * | 2006-03-13 | 2009-07-30 | 日本電気株式会社 | フォトダイオード、およびその製造方法、ならびに光通信デバイスおよび光インタコネクションモジュール |
US8053853B2 (en) * | 2006-05-03 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Color filter-embedded MSM image sensor |
US20110156682A1 (en) * | 2009-12-30 | 2011-06-30 | Dev Alok Girdhar | Voltage converter with integrated schottky device and systems including same |
US9293366B2 (en) * | 2010-04-28 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias with improved connections |
-
2009
- 2009-10-02 IT ITVA2009A000062A patent/IT1396332B1/it active
-
2010
- 2010-09-30 US US12/895,081 patent/US8264019B2/en active Active
-
2012
- 2012-06-27 US US13/534,801 patent/US8338219B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20110079869A1 (en) | 2011-04-07 |
US8338219B2 (en) | 2012-12-25 |
US20120270360A1 (en) | 2012-10-25 |
ITVA20090062A1 (it) | 2011-04-03 |
US8264019B2 (en) | 2012-09-11 |
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