IT1396332B1 - Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. - Google Patents

Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Info

Publication number
IT1396332B1
IT1396332B1 ITVA2009A000062A ITVA20090062A IT1396332B1 IT 1396332 B1 IT1396332 B1 IT 1396332B1 IT VA2009A000062 A ITVA2009A000062 A IT VA2009A000062A IT VA20090062 A ITVA20090062 A IT VA20090062A IT 1396332 B1 IT1396332 B1 IT 1396332B1
Authority
IT
Italy
Prior art keywords
photodiod
deployment
images
detection
data output
Prior art date
Application number
ITVA2009A000062A
Other languages
English (en)
Inventor
Massimo Cataldo Mazzillo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITVA2009A000062A priority Critical patent/IT1396332B1/it
Priority to US12/895,081 priority patent/US8264019B2/en
Publication of ITVA20090062A1 publication Critical patent/ITVA20090062A1/it
Priority to US13/534,801 priority patent/US8338219B2/en
Application granted granted Critical
Publication of IT1396332B1 publication Critical patent/IT1396332B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
ITVA2009A000062A 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. IT1396332B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.
US12/895,081 US8264019B2 (en) 2009-10-02 2010-09-30 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process
US13/534,801 US8338219B2 (en) 2009-10-02 2012-06-27 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Publications (2)

Publication Number Publication Date
ITVA20090062A1 ITVA20090062A1 (it) 2011-04-03
IT1396332B1 true IT1396332B1 (it) 2012-11-16

Family

ID=42130924

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Country Status (2)

Country Link
US (2) US8264019B2 (it)
IT (1) IT1396332B1 (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8487396B2 (en) 2009-06-01 2013-07-16 Stmicroelectronics S.R.L. Trench sidewall contact Schottky photodiode and related method of fabrication
IT1401623B1 (it) * 2010-08-12 2013-07-26 St Microelectronics Srl Diodo schottky multibanda
US20110095192A1 (en) * 2009-10-26 2011-04-28 Johnson Kurtis F Method to increase dynamic range of segmented non-linear devices
EP2375242A1 (en) 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Integrated plasmonic nanocavity sensing device
US8358419B2 (en) * 2011-04-05 2013-01-22 Integrated Plasmonics Corporation Integrated plasmonic sensing device and apparatus
US9343497B2 (en) * 2012-09-20 2016-05-17 Semiconductor Components Industries, Llc Imagers with stacked integrated circuit dies
CN104051488B (zh) * 2013-03-14 2019-06-14 马克西姆综合产品公司 光学传感器
US9431440B2 (en) * 2013-03-14 2016-08-30 Maxim Integrated Products, Inc. Optical sensor
ITTO20130398A1 (it) * 2013-05-16 2014-11-17 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger includente una struttura di confinamento elettro-ottico per la riduzione dell'interferenza, e schiera di fotodiodi
US8941145B2 (en) 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9466631B2 (en) * 2014-05-13 2016-10-11 Stmicroelectronics S.R.L. Solid state photomultipliers array of enhanced fill factor and simplified packaging
US9685576B2 (en) * 2014-10-03 2017-06-20 Omnivision Technologies, Inc. Back side illuminated image sensor with guard ring region reflecting structure
US9685575B2 (en) * 2015-03-06 2017-06-20 Stmicroelectronics S.R.L. Multiband double junction photodiode and related manufacturing process
JP6544440B2 (ja) * 2015-11-19 2019-07-17 株式会社島津製作所 半導体検出器
EP3430648B1 (en) * 2016-03-15 2020-09-23 Dartmouth College Stacked backside-illuminated quanta image sensor with cluster-parallel readout
US10043936B1 (en) * 2016-10-27 2018-08-07 Semiconductor Components Industries, Llc Avalanche diode, and a process of manufacturing an avalanche diode
US10636930B2 (en) * 2017-09-29 2020-04-28 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
DE102018122925A1 (de) * 2017-09-29 2019-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spad image sensor and associated fabricating method
CN108695398B (zh) * 2017-11-30 2020-08-25 中芯集成电路（宁波）有限公司 肖特基的光探测器及其形成方法
IT201800007231A1 (it) 2018-07-16 2020-01-16 Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione
CN109524486B (zh) * 2018-09-28 2022-09-23 暨南大学 一种电读出光学传感器
US10784300B1 (en) * 2019-04-16 2020-09-22 Visera Technologies Company Limited Solid-state imaging devices
CN111653632B (zh) * 2020-06-15 2022-05-10 京东方科技集团股份有限公司 光电探测器及其制备方法、触控基板和显示面板
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
CN117855339B (zh) * 2024-03-05 2024-05-14 山西创芯光电科技有限公司 一种完全去除衬底的超晶格红外探测器制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751159A (en) * 1995-09-05 1998-05-12 Motorola, Inc. Semiconductor array and switches formed on a common substrate for array testing purposes
JPWO2007105593A1 (ja) * 2006-03-13 2009-07-30 日本電気株式会社 フォトダイオード、およびその製造方法、ならびに光通信デバイスおよび光インタコネクションモジュール
US8053853B2 (en) * 2006-05-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter-embedded MSM image sensor
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US9293366B2 (en) * 2010-04-28 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias with improved connections

Also Published As

Publication number Publication date
US20110079869A1 (en) 2011-04-07
US8338219B2 (en) 2012-12-25
US20120270360A1 (en) 2012-10-25
ITVA20090062A1 (it) 2011-04-03
US8264019B2 (en) 2012-09-11

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