IT1392793B1 - Condensatore integrato con piatto a spessore non-uniforme - Google Patents
Condensatore integrato con piatto a spessore non-uniformeInfo
- Publication number
- IT1392793B1 IT1392793B1 ITMI2008A002353A ITMI20082353A IT1392793B1 IT 1392793 B1 IT1392793 B1 IT 1392793B1 IT MI2008A002353 A ITMI2008A002353 A IT MI2008A002353A IT MI20082353 A ITMI20082353 A IT MI20082353A IT 1392793 B1 IT1392793 B1 IT 1392793B1
- Authority
- IT
- Italy
- Prior art keywords
- uniform thickness
- thickness plate
- integrated condenser
- condenser
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inorganic Insulating Materials (AREA)
- Soft Magnetic Materials (AREA)
- Battery Electrode And Active Subsutance (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2008A002353A IT1392793B1 (it) | 2008-12-30 | 2008-12-30 | Condensatore integrato con piatto a spessore non-uniforme |
US12/649,235 US9054225B2 (en) | 2008-12-30 | 2009-12-29 | Integrated capacitor having a non-uniform thickness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2008A002353A IT1392793B1 (it) | 2008-12-30 | 2008-12-30 | Condensatore integrato con piatto a spessore non-uniforme |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20082353A1 ITMI20082353A1 (it) | 2010-06-30 |
IT1392793B1 true IT1392793B1 (it) | 2012-03-23 |
Family
ID=41110437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI2008A002353A IT1392793B1 (it) | 2008-12-30 | 2008-12-30 | Condensatore integrato con piatto a spessore non-uniforme |
Country Status (2)
Country | Link |
---|---|
US (1) | US9054225B2 (it) |
IT (1) | IT1392793B1 (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102664161B (zh) * | 2012-05-25 | 2016-11-16 | 杭州士兰集成电路有限公司 | 高压bcd工艺中高压器件的隔离结构及其制造方法 |
CN102779732A (zh) * | 2012-08-16 | 2012-11-14 | 上海华力微电子有限公司 | 多层金属-氧化硅-金属电容器的制作方法 |
CN103839916B (zh) * | 2012-11-26 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | Mom电容 |
CN103839917B (zh) * | 2012-11-27 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | Mim电容及其形成方法 |
US9589914B2 (en) * | 2014-11-28 | 2017-03-07 | Infineon Technologies Ag | Semiconductor chip |
US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
CN112585740A (zh) | 2018-06-13 | 2021-03-30 | 伊文萨思粘合技术公司 | 作为焊盘的tsv |
US11011494B2 (en) * | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10010288C1 (de) * | 2000-02-25 | 2001-09-20 | Infineon Technologies Ag | Verfahren zur Herstellung einer ferroelektrischen Kondensatoranordnung |
TWI301915B (it) * | 2000-03-17 | 2008-10-11 | Seiko Epson Corp | |
EP1170797A3 (en) * | 2000-07-04 | 2005-05-25 | Alps Electric Co., Ltd. | Thin-film capacitor element and electronic circuit board on which thin-film capacitor element is formed |
JP3843708B2 (ja) * | 2000-07-14 | 2006-11-08 | 日本電気株式会社 | 半導体装置およびその製造方法ならびに薄膜コンデンサ |
JP2002076298A (ja) * | 2000-08-23 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
US6806553B2 (en) * | 2001-03-30 | 2004-10-19 | Kyocera Corporation | Tunable thin film capacitor |
US6825080B1 (en) * | 2003-10-02 | 2004-11-30 | Chartered Semiconductor Manufacturing Ltd. | Method for forming a MIM capacitor |
DE102004039803B4 (de) * | 2004-08-17 | 2006-12-07 | Infineon Technologies Ag | Verfahren zur Herstellung einer Leitbahnanordnung mit erhöhter kapazitiver Kopplung sowie zugehörige Leitbahnanordnung |
KR100796499B1 (ko) * | 2005-12-29 | 2008-01-21 | 동부일렉트로닉스 주식회사 | 커패시터를 갖는 반도체 소자 및 이의 제조방법 |
JP5055768B2 (ja) * | 2006-01-16 | 2012-10-24 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
KR100764741B1 (ko) * | 2006-06-08 | 2007-10-08 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
KR100831268B1 (ko) * | 2006-12-29 | 2008-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 커패시터 및 그 형성방법 |
-
2008
- 2008-12-30 IT ITMI2008A002353A patent/IT1392793B1/it active
-
2009
- 2009-12-29 US US12/649,235 patent/US9054225B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
ITMI20082353A1 (it) | 2010-06-30 |
US20100164066A1 (en) | 2010-07-01 |
US9054225B2 (en) | 2015-06-09 |
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