IT1302208B1 - Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up. - Google Patents

Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up.

Info

Publication number
IT1302208B1
IT1302208B1 IT1998MI002003A ITMI982003A IT1302208B1 IT 1302208 B1 IT1302208 B1 IT 1302208B1 IT 1998MI002003 A IT1998MI002003 A IT 1998MI002003A IT MI982003 A ITMI982003 A IT MI982003A IT 1302208 B1 IT1302208 B1 IT 1302208B1
Authority
IT
Italy
Prior art keywords
immune
latch
phenomenon
protection device
circuit protection
Prior art date
Application number
IT1998MI002003A
Other languages
English (en)
Inventor
Francesco Pulvirenti
Enrico Ravanelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1998MI002003A priority Critical patent/IT1302208B1/it
Priority to US09/392,707 priority patent/US6303964B1/en
Publication of ITMI982003A1 publication Critical patent/ITMI982003A1/it
Application granted granted Critical
Publication of IT1302208B1 publication Critical patent/IT1302208B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
IT1998MI002003A 1998-09-14 1998-09-14 Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up. IT1302208B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1998MI002003A IT1302208B1 (it) 1998-09-14 1998-09-14 Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up.
US09/392,707 US6303964B1 (en) 1998-09-14 1999-09-09 Circuit device for protection against electrostatic discharge, immune to the latch-up phenomenon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1998MI002003A IT1302208B1 (it) 1998-09-14 1998-09-14 Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up.

Publications (2)

Publication Number Publication Date
ITMI982003A1 ITMI982003A1 (it) 2000-03-14
IT1302208B1 true IT1302208B1 (it) 2000-09-05

Family

ID=11380712

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1998MI002003A IT1302208B1 (it) 1998-09-14 1998-09-14 Dispositivo circuitale di protezione contro scariche elettrostatichee immune dal fenomeno di latch-up.

Country Status (2)

Country Link
US (1) US6303964B1 (it)
IT (1) IT1302208B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10028008A1 (de) * 2000-06-06 2001-12-13 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
TW536802B (en) * 2002-04-22 2003-06-11 United Microelectronics Corp Structure and fabrication method of electrostatic discharge protection circuit
US7053452B2 (en) * 2004-08-13 2006-05-30 United Microelectronics Corp. Metal oxide semiconductor device for electrostatic discharge protection circuit
US7462885B2 (en) * 2006-11-30 2008-12-09 Taiwan Semiconductor Manufacturing Co. ESD structure for high voltage ESD protection
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400215B2 (ja) * 1995-11-21 2003-04-28 沖電気工業株式会社 半導体装置
US5929506A (en) * 1996-12-06 1999-07-27 Texas Instrument Incorporated Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process
US6236088B1 (en) * 1997-06-30 2001-05-22 Intersil Corporation Semiconductor device gate structure for thermal overload protection

Also Published As

Publication number Publication date
ITMI982003A1 (it) 2000-03-14
US6303964B1 (en) 2001-10-16

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Legal Events

Date Code Title Description
0001 Granted