IT1284881B1 - Procedimento pr la produzione di triclorosilano - Google Patents
Procedimento pr la produzione di triclorosilanoInfo
- Publication number
- IT1284881B1 IT1284881B1 IT96RM000596A ITRM960596A IT1284881B1 IT 1284881 B1 IT1284881 B1 IT 1284881B1 IT 96RM000596 A IT96RM000596 A IT 96RM000596A IT RM960596 A ITRM960596 A IT RM960596A IT 1284881 B1 IT1284881 B1 IT 1284881B1
- Authority
- IT
- Italy
- Prior art keywords
- trichlorosilane
- procedure
- production
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19534922A DE19534922C1 (de) | 1995-09-21 | 1995-09-21 | Verfahren zur Herstellung von Trichlorsilan und Silicium |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM960596A0 ITRM960596A0 (it) | 1996-08-27 |
ITRM960596A1 ITRM960596A1 (it) | 1998-02-27 |
IT1284881B1 true IT1284881B1 (it) | 1998-05-22 |
Family
ID=7772678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT96RM000596A IT1284881B1 (it) | 1995-09-21 | 1996-08-27 | Procedimento pr la produzione di triclorosilano |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2890253B2 (it) |
KR (1) | KR970015462A (it) |
CA (1) | CA2185981A1 (it) |
DE (1) | DE19534922C1 (it) |
IT (1) | IT1284881B1 (it) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19735378A1 (de) * | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
KR100333351B1 (ko) * | 2000-04-26 | 2002-04-19 | 박종섭 | 데이터 레벨 안정화 회로 |
WO2003087107A2 (de) * | 2002-04-17 | 2003-10-23 | Wacker-Chemie Gmbh | Verfahren zur herstellung von halosilanen unter mikrowellenenergiebeaufschlagung |
MX2009005369A (es) * | 2006-12-01 | 2009-10-13 | Roston Family Llc | Proceso para la preparacion de alcoxisilanos. |
JP4620694B2 (ja) * | 2007-01-31 | 2011-01-26 | 株式会社大阪チタニウムテクノロジーズ | 高純度トリクロロシランの製造方法 |
DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
JP4714196B2 (ja) * | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
KR101117290B1 (ko) * | 2009-04-20 | 2012-03-20 | 에이디알엠테크놀로지 주식회사 | 삼염화실란가스 제조용 반응장치 |
JP5535679B2 (ja) | 2010-02-18 | 2014-07-02 | 株式会社トクヤマ | トリクロロシランの製造方法 |
WO2016031362A1 (ja) * | 2014-08-28 | 2016-03-03 | 東亞合成株式会社 | トリクロロシランの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1935895B2 (de) * | 1969-07-15 | 1971-06-03 | Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt | Verfahren zur herstellung von silikochloroform |
US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
-
1995
- 1995-09-21 DE DE19534922A patent/DE19534922C1/de not_active Expired - Fee Related
-
1996
- 1996-08-27 IT IT96RM000596A patent/IT1284881B1/it active IP Right Grant
- 1996-09-13 KR KR1019960039747A patent/KR970015462A/ko not_active Application Discontinuation
- 1996-09-18 JP JP8246444A patent/JP2890253B2/ja not_active Expired - Lifetime
- 1996-09-19 CA CA002185981A patent/CA2185981A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPH09118512A (ja) | 1997-05-06 |
DE19534922C1 (de) | 1997-02-20 |
CA2185981A1 (en) | 1997-03-22 |
JP2890253B2 (ja) | 1999-05-10 |
ITRM960596A0 (it) | 1996-08-27 |
KR970015462A (ko) | 1997-04-28 |
ITRM960596A1 (it) | 1998-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1276802B1 (it) | Procedimento integrato per la produzione di butene-1 | |
ITMI941928A0 (it) | Procedimento per la fabbricazione di particelle di persali | |
NO950760D0 (no) | Fremgangsmåte for fremstilling av alkylhalosilaner | |
IT1298535B1 (it) | Procedimento per la produzione di gamma-butirrolattone | |
NO982237L (no) | FremgangsmÕte for fremstilling av fenylimidazolidinderivater | |
PT829205E (pt) | Producao de condimento | |
ITMI940317A0 (it) | Procedimento per la produzione di gamma-butirrolattone | |
IT1284881B1 (it) | Procedimento pr la produzione di triclorosilano | |
IT1298096B1 (it) | Procedimento per la produzione di gamma-butirrolattone | |
FI972065A0 (fi) | Menetelmä N-fosfonometyyliglysiinin valmistamiseksi | |
IT1272922B (it) | Procedimento per la preparazione di composti metallocenici | |
NO963187D0 (no) | Fremgangsmåte for syntese av gamma-pyroner | |
NO996432L (no) | Fremgangsmåte for fremstilling av 4-substituert-1H-indol-3- glykosamider | |
IT1290151B1 (it) | Procedimento migliorato per la produzione di 5-idrossimetiltiazolo | |
NO963432D0 (no) | Fremgangsmåte for fremstilling av dimetyldiklorsilan | |
NO991679L (no) | Fremgangsmaate for fremstilling av fenoksyfenylsulfonylhalider | |
ITMI951556A0 (it) | Processo per la preparazione di fluorossi- o clorossi- perfluoroacilfluoruri | |
FI973341A0 (fi) | Menetelmä organosilaanien valmistamiseksi | |
IT1294247B1 (it) | Procedimento per la produzione di nitrobenzammidi oppure amminobenzammidi | |
NO20003077L (no) | FremgangsmÕte for fremstilling av klorbenzooksazolen | |
ITMI941144A0 (it) | Procedimento per la formazione di timbri | |
NO994557D0 (no) | Fremgangsmaate for fremstilling av arylaminotriazolopyridiner | |
FI960790A0 (fi) | Menetelmä fluoreenibisfenolin valmistamiseksi | |
NO964519D0 (no) | Fremgangsmåte for fremstilling av chitosanalkylderivater | |
NO20002476D0 (no) | FremgangsmÕte for fremstilling av formylimidazoler |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |