IT1265136B1 - Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica - Google Patents
Dispositivo di memoria a semiconduttori avente una funzione di auto- ricaricaInfo
- Publication number
- IT1265136B1 IT1265136B1 IT93MI001390A ITMI931390A IT1265136B1 IT 1265136 B1 IT1265136 B1 IT 1265136B1 IT 93MI001390 A IT93MI001390 A IT 93MI001390A IT MI931390 A ITMI931390 A IT MI931390A IT 1265136 B1 IT1265136 B1 IT 1265136B1
- Authority
- IT
- Italy
- Prior art keywords
- charging
- self
- memory device
- semiconductor memory
- recharged
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
Un dispositivo di memoria a semiconduttori ha una unità di oscillatore (105, 106) per generare impulsi di ricarica (refresh), una unità di rilevamento della ricarica di indirizzi (110) per rilevare gli indirizzi ricaricati ed emettere un segnale predeterminato (S3) al completamento della ricarica di tutti gli indirizzi, e una unità di controllo di uscita (107) per continuare un modo di autoricarica per ricaricare tutti gli indirizzi secondo il segnale (S3) dell'unità di rilevamento della ricarica di indirizzi (110), prima di abilitare il modo di autoricarica in risposta ad un segnale esterno (/RAS). Perciò, l'operazione di ricarica viene continuata fino a che tutte le celle non siano state ricaricate, per cui i dati memorizzati nel dispositivo di memoria a semiconduttori non vengono persi e sono correttamente ricaricati.(Figura 3A)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17060292 | 1992-06-29 | ||
JP18238492A JP3190119B2 (ja) | 1992-07-09 | 1992-07-09 | 半導体記憶装置 |
JP04211820A JP3110883B2 (ja) | 1992-08-07 | 1992-08-07 | 半導体記憶装置 |
JP25122692A JP3152758B2 (ja) | 1992-09-21 | 1992-09-21 | ダイナミック型半導体記憶装置 |
JP14767393A JP3285664B2 (ja) | 1992-06-29 | 1993-06-18 | ダイナミック・ランダム・アクセス・メモリ |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI931390A0 ITMI931390A0 (it) | 1993-06-29 |
ITMI931390A1 ITMI931390A1 (it) | 1994-12-29 |
IT1265136B1 true IT1265136B1 (it) | 1996-10-31 |
Family
ID=27527807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT93MI001390A IT1265136B1 (it) | 1992-06-29 | 1993-06-29 | Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica |
Country Status (3)
Country | Link |
---|---|
US (1) | US5499213A (it) |
KR (1) | KR0126243B1 (it) |
IT (1) | IT1265136B1 (it) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3607407B2 (ja) | 1995-04-26 | 2005-01-05 | 株式会社日立製作所 | 半導体記憶装置 |
IL121044A (en) * | 1996-07-15 | 2000-09-28 | Motorola Inc | Dynamic memory device |
JP4000206B2 (ja) * | 1996-08-29 | 2007-10-31 | 富士通株式会社 | 半導体記憶装置 |
US5890198A (en) * | 1996-10-22 | 1999-03-30 | Micron Technology, Inc. | Intelligent refresh controller for dynamic memory devices |
KR100253276B1 (ko) * | 1997-02-18 | 2000-05-01 | 김영환 | 메모리 소자의 셀 리프레쉬 회로 |
JPH10269768A (ja) * | 1997-03-26 | 1998-10-09 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2000021162A (ja) * | 1998-07-03 | 2000-01-21 | Mitsubishi Electric Corp | 揮発性メモリおよびエンベッデッド・ダイナミック・ランダム・アクセス・メモリ |
KR100306966B1 (ko) * | 1998-08-04 | 2001-11-30 | 윤종용 | 동기형버스트반도체메모리장치 |
KR100381966B1 (ko) * | 1998-12-28 | 2004-03-22 | 주식회사 하이닉스반도체 | 반도체메모리장치및그구동방법 |
JP4056173B2 (ja) | 1999-04-14 | 2008-03-05 | 富士通株式会社 | 半導体記憶装置および該半導体記憶装置のリフレッシュ方法 |
JP2001126471A (ja) * | 1999-10-27 | 2001-05-11 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2002042463A (ja) * | 2000-07-21 | 2002-02-08 | Seiko Epson Corp | 半導体装置、そのリフレッシュ方法および電子機器 |
DE10136700B4 (de) * | 2001-07-27 | 2008-03-27 | Qimonda Ag | Verfahren zum Testen einer zu testenden Schaltungseinheit und Testvorrichtung |
KR100424178B1 (ko) * | 2001-09-20 | 2004-03-24 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 내부어드레스 발생회로 |
US6618314B1 (en) | 2002-03-04 | 2003-09-09 | Cypress Semiconductor Corp. | Method and architecture for reducing the power consumption for memory devices in refresh operations |
US6992534B2 (en) * | 2003-10-14 | 2006-01-31 | Micron Technology, Inc. | Circuits and methods of temperature compensation for refresh oscillator |
US20050144576A1 (en) * | 2003-12-25 | 2005-06-30 | Nec Electronics Corporation | Design method for semiconductor circuit device, design method for semiconductor circuit, and semiconductor circuit device |
US7236061B2 (en) * | 2005-05-03 | 2007-06-26 | Macronix International Co., Ltd. | Temperature compensated refresh clock circuit for memory circuits |
KR100654003B1 (ko) * | 2005-11-29 | 2006-12-06 | 주식회사 하이닉스반도체 | 반도체 장치의 셀프 리프레쉬 주기 측정회로 |
JP5038742B2 (ja) * | 2007-03-01 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | セルフリフレッシュ制御回路、半導体装置 |
JP2016092536A (ja) | 2014-10-31 | 2016-05-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US11537464B2 (en) * | 2019-06-14 | 2022-12-27 | Micron Technology, Inc. | Host-based error correction |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2617779B2 (ja) * | 1988-08-31 | 1997-06-04 | 三菱電機株式会社 | 半導体メモリ装置 |
JP3009109B2 (ja) * | 1989-11-07 | 2000-02-14 | 富士通株式会社 | 半導体集積回路 |
-
1993
- 1993-06-29 KR KR1019930011959A patent/KR0126243B1/ko not_active IP Right Cessation
- 1993-06-29 IT IT93MI001390A patent/IT1265136B1/it active IP Right Grant
- 1993-06-29 US US08/083,443 patent/US5499213A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0126243B1 (ko) | 1997-12-26 |
US5499213A (en) | 1996-03-12 |
ITMI931390A1 (it) | 1994-12-29 |
ITMI931390A0 (it) | 1993-06-29 |
KR940006137A (ko) | 1994-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1265136B1 (it) | Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica | |
US5916237A (en) | Power control apparatus and method for a body implantable medical device | |
TW359829B (en) | Portable semiconductor storage and its power control integrated circuit | |
JP3251469B2 (ja) | Dram装置及びそのセルフリフレッシュタイミング信号の発生方法 | |
CN102163453B (zh) | 在刷新时最小化功耗的具有温度感测设备的半导体存储器 | |
US5033027A (en) | Serial DRAM controller with multi generation interface | |
JP2000298982A5 (it) | ||
TW430795B (en) | Ferroelectric random access memory device with an improved reliability | |
CN1260736C (zh) | 半导体存储器及其更新控制电路 | |
TW332333B (en) | The semiconductor memory device with low leakage current & improving data retention | |
EP0342846A3 (en) | Data protection system in a data processing system | |
JPS6432489A (en) | Memory device | |
IT1272460B (it) | Dispositivo di memoria dinamica ad accesso casuale adatto per abbreviare il tempo richiesto per testare la richiesta di auto-rinfresco | |
US6614704B2 (en) | Circuit and method for refreshing memory cells in a DRAM | |
AU2003302944A1 (en) | Device for determining the energy level of an energy store of a mobile data carrier | |
US5687128A (en) | Power supply voltage boosting circuit of semiconductor memory device | |
TW200518096A (en) | Semiconductor memory device to supply stable high voltage during auto-refresh operation and method therefor | |
EP0425693B1 (en) | Memory cartridge and memory control method | |
ES8501558A1 (es) | Una memoria electronica de almacenamiento de datos | |
JPS57111879A (en) | Semiconductor storage device | |
JPS5712485A (en) | Semiconductor integrated circuit | |
JPS6127441U (ja) | 電源供給制御回路 | |
CA2236336A1 (en) | Regulated dram cell plate and precharge voltage generator | |
JPH0273225U (it) | ||
JPH01107939U (it) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970626 |