IT1227859B - Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento - Google Patents
Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimentoInfo
- Publication number
- IT1227859B IT1227859B IT8822503A IT2250388A IT1227859B IT 1227859 B IT1227859 B IT 1227859B IT 8822503 A IT8822503 A IT 8822503A IT 2250388 A IT2250388 A IT 2250388A IT 1227859 B IT1227859 B IT 1227859B
- Authority
- IT
- Italy
- Prior art keywords
- related procedure
- steam phase
- growing equipment
- vertical growing
- vertical
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283054A JP2566796B2 (ja) | 1987-11-11 | 1987-11-11 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8822503A0 IT8822503A0 (it) | 1988-11-04 |
| IT1227859B true IT1227859B (it) | 1991-05-10 |
Family
ID=17660604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8822503A IT1227859B (it) | 1987-11-11 | 1988-11-04 | Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2566796B2 (it) |
| KR (1) | KR930004238B1 (it) |
| DE (1) | DE3837584A1 (it) |
| FR (1) | FR2622899B1 (it) |
| IT (1) | IT1227859B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
| DE19631168C1 (de) * | 1996-08-01 | 1998-01-08 | Siemens Ag | Verfahren zur Vorbehandlung von Substratträgern für Gasphasenepitaxie |
| DE19803423C2 (de) | 1998-01-29 | 2001-02-08 | Siemens Ag | Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor |
| US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
| JP4183945B2 (ja) * | 2001-07-30 | 2008-11-19 | コバレントマテリアル株式会社 | ウェーハ熱処理用部材 |
| KR102051668B1 (ko) * | 2016-12-20 | 2019-12-04 | 주식회사 티씨케이 | SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3424628A (en) * | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
| US3399651A (en) * | 1967-05-26 | 1968-09-03 | Philco Ford Corp | Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon |
| JPS58125608A (ja) * | 1982-01-22 | 1983-07-26 | Nec Corp | グラフアイト板の表面に均一なＳｉＣ膜を形成する方法とその装置 |
| JP2671914B2 (ja) * | 1986-01-30 | 1997-11-05 | 東芝セラミックス 株式会社 | サセプタ |
-
1987
- 1987-11-11 JP JP62283054A patent/JP2566796B2/ja not_active Expired - Fee Related
-
1988
- 1988-10-17 KR KR1019880013517A patent/KR930004238B1/ko not_active IP Right Cessation
- 1988-11-04 IT IT8822503A patent/IT1227859B/it active
- 1988-11-05 DE DE3837584A patent/DE3837584A1/de active Granted
- 1988-11-10 FR FR888814668A patent/FR2622899B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3837584A1 (de) | 1989-05-24 |
| JP2566796B2 (ja) | 1996-12-25 |
| FR2622899A1 (fr) | 1989-05-12 |
| JPH01125819A (ja) | 1989-05-18 |
| KR890008939A (ko) | 1989-07-13 |
| DE3837584C2 (it) | 1993-01-28 |
| KR930004238B1 (ko) | 1993-05-22 |
| FR2622899B1 (fr) | 1992-01-03 |
| IT8822503A0 (it) | 1988-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971129 |