IT1171788B - ALUMINUM METALLIZATION ANTI-REFLECTION COATING - Google Patents
ALUMINUM METALLIZATION ANTI-REFLECTION COATINGInfo
- Publication number
- IT1171788B IT1171788B IT23529/83A IT2352983A IT1171788B IT 1171788 B IT1171788 B IT 1171788B IT 23529/83 A IT23529/83 A IT 23529/83A IT 2352983 A IT2352983 A IT 2352983A IT 1171788 B IT1171788 B IT 1171788B
- Authority
- IT
- Italy
- Prior art keywords
- reflection coating
- aluminum metallization
- metallization
- aluminum
- reflection
- Prior art date
Links
- 238000000637 aluminium metallisation Methods 0.000 title 1
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
- B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING
- B63B2211/00—Applications
- B63B2211/02—Oceanography
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43826782A | 1982-11-01 | 1982-11-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8323529A0 IT8323529A0 (en) | 1983-10-28 |
IT1171788B true IT1171788B (en) | 1987-06-10 |
Family
ID=23739948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23529/83A IT1171788B (en) | 1982-11-01 | 1983-10-28 | ALUMINUM METALLIZATION ANTI-REFLECTION COATING |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR840006728A (en) |
GB (1) | GB2129217A (en) |
IT (1) | IT1171788B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2170649A (en) * | 1985-01-18 | 1986-08-06 | Intel Corp | Sputtered silicon as an anti-reflective coating for metal layer lithography |
KR950011563B1 (en) * | 1990-11-27 | 1995-10-06 | 가부시끼가이샤 도시바 | Manufacturing method of semiconductor device |
JPH0590224A (en) * | 1991-01-22 | 1993-04-09 | Toshiba Corp | Manufacture of semiconductor device |
US5302240A (en) * | 1991-01-22 | 1994-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5926739A (en) | 1995-12-04 | 1999-07-20 | Micron Technology, Inc. | Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride |
US6300253B1 (en) | 1998-04-07 | 2001-10-09 | Micron Technology, Inc. | Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials |
US6323139B1 (en) | 1995-12-04 | 2001-11-27 | Micron Technology, Inc. | Semiconductor processing methods of forming photoresist over silicon nitride materials |
US6635530B2 (en) | 1998-04-07 | 2003-10-21 | Micron Technology, Inc. | Methods of forming gated semiconductor assemblies |
US5985771A (en) | 1998-04-07 | 1999-11-16 | Micron Technology, Inc. | Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers |
US6316372B1 (en) | 1998-04-07 | 2001-11-13 | Micron Technology, Inc. | Methods of forming a layer of silicon nitride in a semiconductor fabrication process |
JP4086967B2 (en) * | 1998-06-18 | 2008-05-14 | 日本碍子株式会社 | Electrostatic chuck particle generation reducing method and semiconductor manufacturing apparatus |
CN106950722B (en) * | 2017-04-12 | 2023-05-23 | 厦门腾诺光学科技有限公司 | Matte sun lens and production process thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881971A (en) * | 1972-11-29 | 1975-05-06 | Ibm | Method for fabricating aluminum interconnection metallurgy system for silicon devices |
DE2911503A1 (en) * | 1979-03-23 | 1980-09-25 | Siemens Ag | METHOD FOR PRODUCING STRUCTURES FROM POSITIVE PHOTO PAINT LAYERS WITHOUT INTERFERING INTERFERENCE EFFECTS |
-
1983
- 1983-10-25 KR KR1019830005037A patent/KR840006728A/en not_active Application Discontinuation
- 1983-10-26 GB GB08328605A patent/GB2129217A/en not_active Withdrawn
- 1983-10-28 IT IT23529/83A patent/IT1171788B/en active
Also Published As
Publication number | Publication date |
---|---|
IT8323529A0 (en) | 1983-10-28 |
GB2129217A (en) | 1984-05-10 |
KR840006728A (en) | 1984-12-01 |
GB8328605D0 (en) | 1983-11-30 |
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