IT1152129B - SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE - Google Patents
SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTUREInfo
- Publication number
- IT1152129B IT1152129B IT21211/82A IT2121182A IT1152129B IT 1152129 B IT1152129 B IT 1152129B IT 21211/82 A IT21211/82 A IT 21211/82A IT 2121182 A IT2121182 A IT 2121182A IT 1152129 B IT1152129 B IT 1152129B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56070732A JPS57186354A (en) | 1981-05-13 | 1981-05-13 | Semiconductor memory storage and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8221211A0 IT8221211A0 (en) | 1982-05-12 |
IT1152129B true IT1152129B (en) | 1986-12-31 |
Family
ID=13439994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21211/82A IT1152129B (en) | 1981-05-13 | 1982-05-12 | SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS57186354A (en) |
KR (1) | KR840000082A (en) |
DE (1) | DE3217896A1 (en) |
FR (1) | FR2506058A1 (en) |
GB (1) | GB2098397A (en) |
IT (1) | IT1152129B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2519461A1 (en) * | 1982-01-06 | 1983-07-08 | Hitachi Ltd | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE |
JPS58181319A (en) * | 1982-04-19 | 1983-10-24 | Hitachi Ltd | Timing generating circuit |
JPH0612619B2 (en) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | Semiconductor memory device |
JPS59172761A (en) * | 1983-03-23 | 1984-09-29 | Hitachi Ltd | Semiconductor device |
US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
JPS60206163A (en) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | Semiconductor memory device |
JPS6421788A (en) * | 1987-07-16 | 1989-01-25 | Nec Corp | Semiconductor memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2130908A1 (en) * | 1970-06-22 | 1971-12-30 | Cogar Corp | Storage cell with metal oxide semiconductor devices with different slopes |
DE2646245A1 (en) * | 1975-10-28 | 1977-05-05 | Motorola Inc | MEMORY CIRCUIT |
DE2633558C2 (en) * | 1976-07-26 | 1978-08-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Memory chip |
JPS53112686A (en) * | 1977-03-14 | 1978-10-02 | Oki Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS5559759A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Semiconductor device |
-
1981
- 1981-05-13 JP JP56070732A patent/JPS57186354A/en active Pending
-
1982
- 1982-04-27 GB GB8212113A patent/GB2098397A/en not_active Withdrawn
- 1982-05-07 FR FR8207966A patent/FR2506058A1/en active Granted
- 1982-05-10 KR KR1019820002028A patent/KR840000082A/en unknown
- 1982-05-12 DE DE19823217896 patent/DE3217896A1/en not_active Withdrawn
- 1982-05-12 IT IT21211/82A patent/IT1152129B/en active
Also Published As
Publication number | Publication date |
---|---|
FR2506058B1 (en) | 1985-04-12 |
KR840000082A (en) | 1984-01-30 |
FR2506058A1 (en) | 1982-11-19 |
JPS57186354A (en) | 1982-11-16 |
IT8221211A0 (en) | 1982-05-12 |
DE3217896A1 (en) | 1983-05-26 |
GB2098397A (en) | 1982-11-17 |
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