IT1118044B - Fotodiodo perfezionato - Google Patents
Fotodiodo perfezionatoInfo
- Publication number
- IT1118044B IT1118044B IT26101/77A IT2610177A IT1118044B IT 1118044 B IT1118044 B IT 1118044B IT 26101/77 A IT26101/77 A IT 26101/77A IT 2610177 A IT2610177 A IT 2610177A IT 1118044 B IT1118044 B IT 1118044B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- photodiode
- perfected photodiode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71705276A | 1976-08-23 | 1976-08-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1118044B true IT1118044B (it) | 1986-02-24 |
Family
ID=24880516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26101/77A IT1118044B (it) | 1976-08-23 | 1977-07-26 | Fotodiodo perfezionato |
Country Status (6)
Country | Link |
---|---|
US (1) | US4107722A (it) |
JP (1) | JPS5326593A (it) |
CA (1) | CA1090457A (it) |
DE (1) | DE2730477A1 (it) |
FR (1) | FR2363197A1 (it) |
IT (1) | IT1118044B (it) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4219830A (en) * | 1978-06-19 | 1980-08-26 | Gibbons James F | Semiconductor solar cell |
JPS5582472A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Silicone solar energy converter |
JPS5798961A (en) * | 1980-12-11 | 1982-06-19 | Sanyo Electric Co Ltd | Photodiode for detecting index light signal in beam index type color television receiver |
GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
EP0296371B1 (de) * | 1987-06-22 | 1992-12-23 | Landis & Gyr Business Support AG | Photodetektor für Ultraviolett und Verfahren zur Herstellung |
US4968634A (en) * | 1988-05-20 | 1990-11-06 | Siemens Aktiengesellschaft | Fabrication process for photodiodes responsive to blue light |
DE69321822T2 (de) * | 1993-05-19 | 1999-04-01 | Hewlett-Packard Gmbh, 71034 Boeblingen | Photodiodenstruktur |
JP3516552B2 (ja) * | 1996-04-30 | 2004-04-05 | シャープ株式会社 | 受光素子の製造方法 |
US6287886B1 (en) * | 1999-08-23 | 2001-09-11 | United Microelectronics Corp. | Method of forming a CMOS image sensor |
JP2003197949A (ja) * | 2001-12-26 | 2003-07-11 | Sharp Corp | 受光素子および回路内蔵型受光装置および光ディスク装置 |
JP2004087979A (ja) * | 2002-08-28 | 2004-03-18 | Sharp Corp | 受光素子およびその製造方法並びに回路内蔵型受光素子 |
DE102005007358B4 (de) * | 2005-02-17 | 2008-05-08 | Austriamicrosystems Ag | Lichtempfindliches Bauelement |
DE102005025937B4 (de) * | 2005-02-18 | 2009-11-26 | Austriamicrosystems Ag | Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren |
JP2007317767A (ja) * | 2006-05-24 | 2007-12-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP2018026536A (ja) * | 2016-08-09 | 2018-02-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3081370A (en) * | 1961-07-17 | 1963-03-12 | Raytheon Co | Solar cells |
US3514846A (en) * | 1967-11-15 | 1970-06-02 | Bell Telephone Labor Inc | Method of fabricating a planar avalanche photodiode |
US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
JPS4917189A (it) * | 1972-06-02 | 1974-02-15 | ||
US3978509A (en) * | 1972-06-02 | 1976-08-31 | U.S. Philips Corporation | Photosensitive semiconductor device |
US4001864A (en) * | 1976-01-30 | 1977-01-04 | Gibbons James F | Semiconductor p-n junction solar cell and method of manufacture |
-
1977
- 1977-06-21 FR FR7720045A patent/FR2363197A1/fr active Granted
- 1977-07-06 DE DE19772730477 patent/DE2730477A1/de active Pending
- 1977-07-07 JP JP8049877A patent/JPS5326593A/ja active Pending
- 1977-07-18 CA CA282,968A patent/CA1090457A/en not_active Expired
- 1977-07-26 IT IT26101/77A patent/IT1118044B/it active
- 1977-11-25 US US05/854,877 patent/US4107722A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2363197A1 (fr) | 1978-03-24 |
US4107722A (en) | 1978-08-15 |
DE2730477A1 (de) | 1978-03-02 |
FR2363197B1 (it) | 1979-05-11 |
CA1090457A (en) | 1980-11-25 |
JPS5326593A (en) | 1978-03-11 |
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