IT1110947B - Elemento di memoria ad accesso comandato - Google Patents
Elemento di memoria ad accesso comandatoInfo
- Publication number
- IT1110947B IT1110947B IT19419/79A IT1941979A IT1110947B IT 1110947 B IT1110947 B IT 1110947B IT 19419/79 A IT19419/79 A IT 19419/79A IT 1941979 A IT1941979 A IT 1941979A IT 1110947 B IT1110947 B IT 1110947B
- Authority
- IT
- Italy
- Prior art keywords
- access memory
- memory element
- command access
- command
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87091078A | 1978-01-19 | 1978-01-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7919419A0 IT7919419A0 (it) | 1979-01-18 |
IT1110947B true IT1110947B (it) | 1986-01-13 |
Family
ID=25356306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19419/79A IT1110947B (it) | 1978-01-19 | 1979-01-18 | Elemento di memoria ad accesso comandato |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0003413A3 (it) |
JP (1) | JPS54110788A (it) |
IT (1) | IT1110947B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793542A (en) * | 1980-12-03 | 1982-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
US7158420B2 (en) * | 2005-04-29 | 2007-01-02 | Macronix International Co., Ltd. | Inversion bit line, charge trapping non-volatile memory and method of operating same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
US3815106A (en) * | 1972-05-11 | 1974-06-04 | S Wiedmann | Flip-flop memory cell arrangement |
GB1374009A (en) * | 1971-08-09 | 1974-11-13 | Ibm | Information storage |
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
JPS5024038A (it) * | 1973-06-29 | 1975-03-14 | ||
DE2418750C3 (de) * | 1974-04-18 | 1978-11-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MI112 S-Speichertransistor |
US4090257A (en) * | 1976-06-28 | 1978-05-16 | Westinghouse Electric Corp. | Dual mode MNOS memory with paired columns and differential sense circuit |
US4057820A (en) * | 1976-06-29 | 1977-11-08 | Westinghouse Electric Corporation | Dual gate MNOS transistor |
US4053917A (en) * | 1976-08-16 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Drain source protected MNOS transistor and method of manufacture |
-
1979
- 1979-01-18 EP EP79300091A patent/EP0003413A3/en not_active Withdrawn
- 1979-01-18 IT IT19419/79A patent/IT1110947B/it active
- 1979-01-19 JP JP599079A patent/JPS54110788A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT7919419A0 (it) | 1979-01-18 |
EP0003413A2 (en) | 1979-08-08 |
EP0003413A3 (en) | 1979-08-22 |
JPS54110788A (en) | 1979-08-30 |
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