IT1101096B - Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante - Google Patents
Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultanteInfo
- Publication number
- IT1101096B IT1101096B IT31304/78A IT3130478A IT1101096B IT 1101096 B IT1101096 B IT 1101096B IT 31304/78 A IT31304/78 A IT 31304/78A IT 3130478 A IT3130478 A IT 3130478A IT 1101096 B IT1101096 B IT 1101096B
- Authority
- IT
- Italy
- Prior art keywords
- improvement
- procedure
- semiconductor devices
- resulting product
- integrated semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT31304/78A IT1101096B (it) | 1978-12-22 | 1978-12-22 | Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante |
FR7929840A FR2445022A1 (fr) | 1978-12-22 | 1979-12-05 | Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu |
SE7910530A SE7910530L (sv) | 1978-12-22 | 1979-12-20 | Sett att tillverka integrerade kretsar |
DE19792951821 DE2951821A1 (de) | 1978-12-22 | 1979-12-21 | Verbessertes verfahren zur herstellung von integrierten halbleitervorrichtungen und damit hergestelltes erzeugnis |
JP16577079A JPS55108762A (en) | 1978-12-22 | 1979-12-21 | Method of manufacturing integrated semiconductor device |
GB7944398A GB2039415A (en) | 1978-12-22 | 1979-12-24 | A method for producing integrated semiconductor devices, and the resultant product |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT31304/78A IT1101096B (it) | 1978-12-22 | 1978-12-22 | Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7831304A0 IT7831304A0 (it) | 1978-12-22 |
IT1101096B true IT1101096B (it) | 1985-09-28 |
Family
ID=11233426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT31304/78A IT1101096B (it) | 1978-12-22 | 1978-12-22 | Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS55108762A (it) |
DE (1) | DE2951821A1 (it) |
FR (1) | FR2445022A1 (it) |
GB (1) | GB2039415A (it) |
IT (1) | IT1101096B (it) |
SE (1) | SE7910530L (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0057549B1 (en) * | 1981-01-29 | 1987-07-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
US4902633A (en) * | 1988-05-09 | 1990-02-20 | Motorola, Inc. | Process for making a bipolar integrated circuit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123577A (en) * | 1975-04-22 | 1976-10-28 | Toshiba Corp | Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor |
-
1978
- 1978-12-22 IT IT31304/78A patent/IT1101096B/it active
-
1979
- 1979-12-05 FR FR7929840A patent/FR2445022A1/fr not_active Withdrawn
- 1979-12-20 SE SE7910530A patent/SE7910530L/ not_active Application Discontinuation
- 1979-12-21 DE DE19792951821 patent/DE2951821A1/de not_active Withdrawn
- 1979-12-21 JP JP16577079A patent/JPS55108762A/ja active Pending
- 1979-12-24 GB GB7944398A patent/GB2039415A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
SE7910530L (sv) | 1980-06-23 |
GB2039415A (en) | 1980-08-06 |
FR2445022A1 (fr) | 1980-07-18 |
IT7831304A0 (it) | 1978-12-22 |
DE2951821A1 (de) | 1980-07-03 |
JPS55108762A (en) | 1980-08-21 |
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