IT1098127B - Metodo di fabbricazione di un dispositivo seminconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo - Google Patents
Metodo di fabbricazione di un dispositivo seminconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodoInfo
- Publication number
- IT1098127B IT1098127B IT26940/78A IT2694078A IT1098127B IT 1098127 B IT1098127 B IT 1098127B IT 26940/78 A IT26940/78 A IT 26940/78A IT 2694078 A IT2694078 A IT 2694078A IT 1098127 B IT1098127 B IT 1098127B
- Authority
- IT
- Italy
- Prior art keywords
- semi
- conductor
- aid
- manufacture
- device manufactured
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7709363A NL7709363A (nl) | 1977-08-25 | 1977-08-25 | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7826940A0 IT7826940A0 (it) | 1978-08-22 |
IT1098127B true IT1098127B (it) | 1985-09-07 |
Family
ID=19829072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26940/78A IT1098127B (it) | 1977-08-25 | 1978-08-22 | Metodo di fabbricazione di un dispositivo seminconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo |
Country Status (9)
Country | Link |
---|---|
US (1) | US4199378A (it) |
EP (1) | EP0001300B1 (it) |
JP (1) | JPS5446485A (it) |
AU (1) | AU517646B2 (it) |
CA (1) | CA1118532A (it) |
DE (1) | DE2861353D1 (it) |
ES (1) | ES472793A1 (it) |
IT (1) | IT1098127B (it) |
NL (1) | NL7709363A (it) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4269636A (en) * | 1978-12-29 | 1981-05-26 | Harris Corporation | Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking |
JPS5852339B2 (ja) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
JPS5696852A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Semiconductor device |
JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57194572A (en) * | 1981-05-27 | 1982-11-30 | Clarion Co Ltd | Semiconductor device and manufacture thereof |
CA1188418A (en) * | 1982-01-04 | 1985-06-04 | Jay A. Shideler | Oxide isolation process for standard ram/prom and lateral pnp cell ram |
US4961102A (en) * | 1982-01-04 | 1990-10-02 | Shideler Jay A | Junction programmable vertical transistor with high performance transistor |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
US4444605A (en) * | 1982-08-27 | 1984-04-24 | Texas Instruments Incorporated | Planar field oxide for semiconductor devices |
US4507848A (en) * | 1982-11-22 | 1985-04-02 | Fairchild Camera & Instrument Corporation | Control of substrate injection in lateral bipolar transistors |
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
US4860082A (en) * | 1984-07-08 | 1989-08-22 | Nec Corporation | Bipolar transistor |
JPS61220465A (ja) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | 半導体装置 |
US4622738A (en) * | 1985-04-08 | 1986-11-18 | Advanced Micro Devices, Inc. | Method of making integrated bipolar semiconductor device by first forming junction isolation regions and recessed oxide isolation regions without birds beak |
US4700461A (en) * | 1986-09-29 | 1987-10-20 | Massachusetts Institute Of Technology | Process for making junction field-effect transistors |
JPH02121143U (it) * | 1989-03-15 | 1990-10-01 | ||
GB2238658B (en) * | 1989-11-23 | 1993-02-17 | Stc Plc | Improvements in integrated circuits |
US5389553A (en) * | 1993-06-30 | 1995-02-14 | National Semiconductor Corporation | Methods for fabrication of transistors |
KR100384560B1 (ko) * | 1995-06-30 | 2003-08-06 | 주식회사 하이닉스반도체 | 반도체소자및그제조방법 |
KR0171000B1 (ko) * | 1995-12-15 | 1999-02-01 | 양승택 | 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법 |
JP2001217317A (ja) * | 2000-02-07 | 2001-08-10 | Sony Corp | 半導体装置およびその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3748187A (en) * | 1971-08-03 | 1973-07-24 | Hughes Aircraft Co | Self-registered doped layer for preventing field inversion in mis circuits |
US3928091A (en) * | 1971-09-27 | 1975-12-23 | Hitachi Ltd | Method for manufacturing a semiconductor device utilizing selective oxidation |
US3992232A (en) * | 1973-08-06 | 1976-11-16 | Hitachi, Ltd. | Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
GB1457139A (en) * | 1973-09-27 | 1976-12-01 | Hitachi Ltd | Method of manufacturing semiconductor device |
NL180466C (nl) * | 1974-03-15 | 1987-02-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal. |
DE2429957B2 (de) * | 1974-06-21 | 1980-08-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper |
JPS5329555B2 (it) * | 1974-11-22 | 1978-08-22 | ||
DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
JPS5338984A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Manufacture of semiconductor device |
US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
-
1977
- 1977-08-25 NL NL7709363A patent/NL7709363A/xx not_active Application Discontinuation
-
1978
- 1978-07-31 EP EP78200122A patent/EP0001300B1/en not_active Expired
- 1978-07-31 DE DE7878200122T patent/DE2861353D1/de not_active Expired
- 1978-08-15 CA CA000309394A patent/CA1118532A/en not_active Expired
- 1978-08-18 US US05/935,025 patent/US4199378A/en not_active Expired - Lifetime
- 1978-08-22 IT IT26940/78A patent/IT1098127B/it active
- 1978-08-23 ES ES472793A patent/ES472793A1/es not_active Expired
- 1978-08-23 AU AU39177/78A patent/AU517646B2/en not_active Expired
- 1978-08-25 JP JP10296378A patent/JPS5446485A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2861353D1 (en) | 1982-01-28 |
AU3917778A (en) | 1980-02-28 |
EP0001300A1 (en) | 1979-04-04 |
EP0001300B1 (en) | 1981-11-25 |
JPS6140146B2 (it) | 1986-09-08 |
IT7826940A0 (it) | 1978-08-22 |
US4199378A (en) | 1980-04-22 |
ES472793A1 (es) | 1979-03-16 |
AU517646B2 (en) | 1981-08-13 |
JPS5446485A (en) | 1979-04-12 |
NL7709363A (nl) | 1979-02-27 |
CA1118532A (en) | 1982-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1066832B (it) | Metodo per la fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1085067B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1137408B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1098127B (it) | Metodo di fabbricazione di un dispositivo seminconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1063373B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l ausilio di tale metodo | |
IT1086058B (it) | Metodo di fabbricazione di un dispositivi semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1078388B (it) | Cavo a due guaine e procedimento di fabbricazione | |
IT1154623B (it) | Metodo di fabbricazione di un dispositivo piezoelettrico e dispositivo fabbricato con questo metodo | |
IT1172413B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
NL7701119A (nl) | Halfgeleiderinrichting en werkwijze voor de ver- vaardiging daarvan. | |
IT1067196B (it) | Cavaturaccioli meccanico e metodo di fabbricazione del medesimo | |
IT7969499A0 (it) | Procedimento e dispositivo per la fabbricazione di cerniere lampo | |
IT1078440B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo fabbricato con l'ausilio di tale metodo | |
IT1086123B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo | |
IT1081122B (it) | Metodo di fabbricazione di un dispositivo,e dispositivo fabbricato con l'ausilio di tale metodo | |
IT1112065B (it) | Procedimento per la produzione di triclorosinalo e tetracloruro di silicio | |
IT7824657A0 (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo. | |
IT1090671B (it) | Procedimento e dispositivo per la produzione di blocchi | |
IT1195749B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore ottenuto con tale metodo | |
IT1076585B (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo fabbricato con l'ausilio di tale metodo | |
IT1193483B (it) | Metodo di fabbricazione di un tubo a raggi catodici e tubo a raggi catodici fabbricato con l'ausilio di tale metodo | |
IT1117104B (it) | Procedimento e dispositivo per la produzione di monocristalli preformati | |
IT1085374B (it) | Procedimento per la produzione di 2-alchil-4-metil-6-idrossipirimidin e oppure di 2-cicloalchil-4-metil-6-idrossipirimidine | |
PL204820A1 (pl) | Element polprzewodnikowy oraz sposob wytwarzania elementu polprzewodnikowego | |
PL204821A1 (pl) | Element polprzewodnikowy ora sposob wytwarzania elementu polprzewodnikowego |