IT1060656B - Metodo di funzionamento di un dispositivo per la formazione di immagini - Google Patents
Metodo di funzionamento di un dispositivo per la formazione di immaginiInfo
- Publication number
- IT1060656B IT1060656B IT23461/76A IT2346176A IT1060656B IT 1060656 B IT1060656 B IT 1060656B IT 23461/76 A IT23461/76 A IT 23461/76A IT 2346176 A IT2346176 A IT 2346176A IT 1060656 B IT1060656 B IT 1060656B
- Authority
- IT
- Italy
- Prior art keywords
- images
- formation
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/579,690 US3953733A (en) | 1975-05-21 | 1975-05-21 | Method of operating imagers |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1060656B true IT1060656B (it) | 1982-08-20 |
Family
ID=24317943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23461/76A IT1060656B (it) | 1975-05-21 | 1976-05-20 | Metodo di funzionamento di un dispositivo per la formazione di immagini |
Country Status (8)
Country | Link |
---|---|
US (1) | US3953733A (it) |
JP (1) | JPS51142908A (it) |
CA (1) | CA1103346A (it) |
DE (1) | DE2622828C3 (it) |
FR (1) | FR2312147A1 (it) |
GB (1) | GB1531920A (it) |
IT (1) | IT1060656B (it) |
NL (1) | NL188261C (it) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS538015A (en) * | 1976-07-12 | 1978-01-25 | Toshiba Corp | Pick up system with charge coupled element |
JPS5451318A (en) * | 1977-09-29 | 1979-04-23 | Sony Corp | Solid pickup unit |
JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
EP0033129B1 (en) * | 1980-01-25 | 1984-06-13 | Kabushiki Kaisha Toshiba | Charge transfer apparatus |
US4314275A (en) * | 1980-03-24 | 1982-02-02 | Texas Instruments Incorporated | Infrared time delay with integration CTD imager |
US4377755A (en) * | 1980-07-15 | 1983-03-22 | The United States Of America As Represented By The Secretary Of The Air Force | Signal compressor apparatus |
JPS586682A (ja) * | 1981-07-06 | 1983-01-14 | Sony Corp | 固体撮像装置 |
US4598414A (en) * | 1981-12-18 | 1986-07-01 | Honeywell Inc. | Input compression apparatus for charge coupled devices |
FR2537813B1 (fr) * | 1982-12-10 | 1986-10-10 | Thomson Csf | Procede de reglage des conditions de fonctionnement d'un dispositif photosensible a transfert de charge et dispositif pour sa mise en oeuvre |
JPH0815322B2 (ja) * | 1986-05-21 | 1996-02-14 | キヤノン株式会社 | 固体撮像装置 |
US4926247A (en) * | 1986-10-15 | 1990-05-15 | Olympus Optical Co., Ltd. | Color imaging apparatus including a means for electronically non-linearly expanding and compressing dynamic range of an image signal |
US5008758A (en) * | 1989-05-24 | 1991-04-16 | Massachusetts Institute Of Technology | Suppressing dark current in charge-coupled devices |
US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
US5295001A (en) * | 1990-11-01 | 1994-03-15 | Canon Kabushiki Kaisha | Image sensing apparatus having tone control function |
US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
US5426515A (en) * | 1992-06-01 | 1995-06-20 | Eastman Kodak Company | Lateral overflow gate driver circuit for linear CCD sensor |
DE19519743A1 (de) * | 1994-05-31 | 1995-12-07 | Dalsa Inc | Photodetektor mit schaltungsgesteuerten CCD-Elektroden |
EP0700204B1 (en) * | 1994-08-31 | 2000-06-07 | Matsushita Electric Industrial Co., Ltd. | Imaging apparatus having a broad dynamic range |
US5742297A (en) * | 1994-11-04 | 1998-04-21 | Lockheed Martin Corporation | Apparatus and method for constructing a mosaic of data |
US6101294A (en) * | 1997-06-02 | 2000-08-08 | Sarnoff Corporation | Extended dynamic imaging system and method |
KR100639155B1 (ko) * | 1997-06-02 | 2006-10-27 | 사르노프 코포레이션 | 영상 시스템의 동적 범위를 확장하기 위한 시스템 및 방법 |
DE69941659D1 (de) * | 1998-09-25 | 2010-01-07 | Bae Systems Information | Erweiterung des Dynamikbereichs von CCD-Bildaufnahmevorrichtungen |
US6188433B1 (en) * | 1999-02-02 | 2001-02-13 | Ball Aerospace & Technologies Corp. | Method and apparatus for enhancing the dynamic range of a CCD sensor |
US6472653B1 (en) * | 1999-03-22 | 2002-10-29 | Sarnoff Corporation | Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices |
JP2001218113A (ja) * | 2000-02-02 | 2001-08-10 | Minolta Co Ltd | 固体撮像装置 |
US7265397B1 (en) | 2000-08-30 | 2007-09-04 | Sarnoff Corporation | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture |
US20050083421A1 (en) * | 2003-10-16 | 2005-04-21 | Vladimir Berezin | Dynamic range enlargement in CMOS image sensors |
CN1670962A (zh) * | 2004-03-17 | 2005-09-21 | 三洋电机株式会社 | 电荷耦合元件的电压控制装置及控制方法 |
US20050212936A1 (en) * | 2004-03-25 | 2005-09-29 | Eastman Kodak Company | Extended dynamic range image sensor with fixed pattern noise reduction |
US7378634B2 (en) * | 2004-07-27 | 2008-05-27 | Sarnoff Corporation | Imaging methods and apparatus having extended dynamic range |
JP2006108379A (ja) | 2004-10-05 | 2006-04-20 | Sony Corp | 固体撮像素子及びその駆動方法 |
US20060082670A1 (en) * | 2004-10-14 | 2006-04-20 | Eastman Kodak Company | Interline CCD for still and video photography with extended dynamic range |
US7796171B2 (en) * | 2007-02-16 | 2010-09-14 | Flir Advanced Imaging Systems, Inc. | Sensor-based gamma correction of a digital camera |
US20110073982A1 (en) * | 2007-05-25 | 2011-03-31 | Armstrong J Joseph | Inspection system using back side illuminated linear sensor |
GB2468668B (en) * | 2009-03-17 | 2014-07-16 | E2V Tech Uk Ltd | CCD imaging array with extended dynamic range |
US10257448B1 (en) | 2015-08-18 | 2019-04-09 | Sri International | Extended dynamic range imaging sensor and operating mode of the same |
US10827139B2 (en) | 2015-08-18 | 2020-11-03 | Sri International | Multiple window, multiple mode image sensor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3845295A (en) * | 1973-05-02 | 1974-10-29 | Rca Corp | Charge-coupled radiation sensing circuit with charge skim-off and reset |
JPS5721904B2 (it) * | 1973-10-03 | 1982-05-10 | ||
JPS5339211B2 (it) * | 1973-10-26 | 1978-10-20 | ||
US3883437A (en) * | 1974-01-25 | 1975-05-13 | Hughes Aircraft Co | Monolithic IR detector arrays with direct injection charge coupled device readout |
-
1975
- 1975-05-21 US US05/579,690 patent/US3953733A/en not_active Expired - Lifetime
-
1976
- 1976-05-19 GB GB20713/76A patent/GB1531920A/en not_active Expired
- 1976-05-20 FR FR7615278A patent/FR2312147A1/fr active Granted
- 1976-05-20 CA CA252,988A patent/CA1103346A/en not_active Expired
- 1976-05-20 NL NLAANVRAGE7605367,A patent/NL188261C/xx not_active IP Right Cessation
- 1976-05-20 IT IT23461/76A patent/IT1060656B/it active
- 1976-05-20 JP JP51058987A patent/JPS51142908A/ja active Pending
- 1976-05-21 DE DE2622828A patent/DE2622828C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2622828B2 (de) | 1977-12-01 |
JPS51142908A (en) | 1976-12-08 |
FR2312147A1 (fr) | 1976-12-17 |
US3953733A (en) | 1976-04-27 |
DE2622828C3 (de) | 1978-07-13 |
FR2312147B1 (it) | 1982-05-28 |
CA1103346A (en) | 1981-06-16 |
NL7605367A (nl) | 1976-11-23 |
NL188261C (nl) | 1992-05-06 |
NL188261B (nl) | 1991-12-02 |
DE2622828A1 (de) | 1976-12-02 |
GB1531920A (en) | 1978-11-15 |
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