IT1059772B - Tiristore con un elemento a semicondusttori con perlomeno quattrozone di tipo di conduzione alternato - Google Patents
Tiristore con un elemento a semicondusttori con perlomeno quattrozone di tipo di conduzione alternatoInfo
- Publication number
- IT1059772B IT1059772B IT22941/76A IT2294176A IT1059772B IT 1059772 B IT1059772 B IT 1059772B IT 22941/76 A IT22941/76 A IT 22941/76A IT 2294176 A IT2294176 A IT 2294176A IT 1059772 B IT1059772 B IT 1059772B
- Authority
- IT
- Italy
- Prior art keywords
- thyristor
- zones
- semiconductor element
- conduction type
- alternate conduction
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2520134A DE2520134C3 (de) | 1975-05-06 | 1975-05-06 | Thyristor mit einem rechteckigen Halbleiterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1059772B true IT1059772B (it) | 1982-06-21 |
Family
ID=5945890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22941/76A IT1059772B (it) | 1975-05-06 | 1976-05-04 | Tiristore con un elemento a semicondusttori con perlomeno quattrozone di tipo di conduzione alternato |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4072980A (it) |
| JP (1) | JPS51137388A (it) |
| DE (1) | DE2520134C3 (it) |
| FR (1) | FR2310636A1 (it) |
| GB (1) | GB1498326A (it) |
| IT (1) | IT1059772B (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5257241U (it) * | 1976-10-13 | 1977-04-25 | ||
| IN149647B (it) * | 1977-03-21 | 1982-02-27 | Westinghouse Electric Corp | |
| JPS53128987A (en) * | 1977-04-16 | 1978-11-10 | Toshiba Corp | Semiconductor control rectifying device |
| GB2263579A (en) * | 1992-01-24 | 1993-07-28 | Texas Instruments Ltd | An integrated circuit with intermingled electrodes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3476992A (en) * | 1967-12-26 | 1969-11-04 | Westinghouse Electric Corp | Geometry of shorted-cathode-emitter for low and high power thyristor |
| GB1263174A (en) * | 1969-06-11 | 1972-02-09 | Westinghouse Brake & Signal | Semiconductor device |
| US3599061A (en) * | 1969-09-30 | 1971-08-10 | Usa | Scr emitter short patterns |
| GB1425651A (en) * | 1972-04-03 | 1976-02-18 | Motorola Inc | Channel firing thyristor |
| FR2254880B1 (it) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
| GB1546094A (en) * | 1975-04-11 | 1979-05-16 | Aei Semiconductors Ltd | Thyristors |
-
1975
- 1975-05-06 DE DE2520134A patent/DE2520134C3/de not_active Expired
-
1976
- 1976-03-26 GB GB12313/76A patent/GB1498326A/en not_active Expired
- 1976-05-04 US US05/683,206 patent/US4072980A/en not_active Expired - Lifetime
- 1976-05-04 JP JP51051216A patent/JPS51137388A/ja active Granted
- 1976-05-04 IT IT22941/76A patent/IT1059772B/it active
- 1976-05-05 FR FR7613401A patent/FR2310636A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE2520134C3 (de) | 1978-10-19 |
| GB1498326A (en) | 1978-01-18 |
| DE2520134A1 (de) | 1976-11-18 |
| JPS5751268B2 (it) | 1982-11-01 |
| DE2520134B2 (de) | 1978-02-09 |
| US4072980A (en) | 1978-02-07 |
| FR2310636A1 (fr) | 1976-12-03 |
| JPS51137388A (en) | 1976-11-27 |
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